WO2003015184A1 - Element d'emission de rayonnement ultraviolet haute luminosite en diamant - Google Patents

Element d'emission de rayonnement ultraviolet haute luminosite en diamant Download PDF

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Publication number
WO2003015184A1
WO2003015184A1 PCT/JP2002/007873 JP0207873W WO03015184A1 WO 2003015184 A1 WO2003015184 A1 WO 2003015184A1 JP 0207873 W JP0207873 W JP 0207873W WO 03015184 A1 WO03015184 A1 WO 03015184A1
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
layer
density
diamond layer
ultraviolet ray
Prior art date
Application number
PCT/JP2002/007873
Other languages
English (en)
French (fr)
Inventor
Kenji Horiuchi
Kazuo Nakamura
Takefumi Ishikura
Masaya Nagai
Ryo Shimano
Makoto Gonokami
Original Assignee
Tokyo Gas Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Gas Co., Ltd. filed Critical Tokyo Gas Co., Ltd.
Priority to EP20020755764 priority Critical patent/EP1414079A1/en
Publication of WO2003015184A1 publication Critical patent/WO2003015184A1/ja
Priority to US10/770,369 priority patent/US20040155573A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3228—IV compounds diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/JP2002/007873 2001-08-03 2002-08-01 Element d'emission de rayonnement ultraviolet haute luminosite en diamant WO2003015184A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP20020755764 EP1414079A1 (en) 2001-08-03 2002-08-01 Diamond high brightness ultraviolet ray emitting element
US10/770,369 US20040155573A1 (en) 2001-08-03 2004-02-03 Diamond high brightness ultraviolet ray emitting element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001236938A JP2003051609A (ja) 2001-08-03 2001-08-03 ダイヤモンド高輝度紫外線発光素子
JP2001-236938 2001-08-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/770,369 Continuation US20040155573A1 (en) 2001-08-03 2004-02-03 Diamond high brightness ultraviolet ray emitting element

Publications (1)

Publication Number Publication Date
WO2003015184A1 true WO2003015184A1 (fr) 2003-02-20

Family

ID=19068111

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/007873 WO2003015184A1 (fr) 2001-08-03 2002-08-01 Element d'emission de rayonnement ultraviolet haute luminosite en diamant

Country Status (4)

Country Link
US (1) US20040155573A1 (ja)
EP (1) EP1414079A1 (ja)
JP (1) JP2003051609A (ja)
WO (1) WO2003015184A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003092455A (ja) * 2001-09-17 2003-03-28 Japan Science & Technology Corp 半導体レーザ
US7535162B2 (en) 2003-04-30 2009-05-19 National Institute For Materials Science Zinc oxide phosphor, process for producing the same and light emitting device
JP4581086B2 (ja) * 2005-01-25 2010-11-17 国立大学法人東北大学 蓄光体の製造方法
JP4629490B2 (ja) * 2005-05-09 2011-02-09 三菱電機株式会社 誘電体分離型半導体装置
JP2007265924A (ja) * 2006-03-30 2007-10-11 Sumitomo Electric Ind Ltd ダイヤモンド電子源素子
JP5273635B2 (ja) * 2006-08-25 2013-08-28 独立行政法人産業技術総合研究所 高効率間接遷移型半導体紫外線発光素子
JP2009033076A (ja) * 2007-07-27 2009-02-12 Akitomo Tejima ダイヤモンド発光素子
US20100247884A1 (en) * 2007-10-03 2010-09-30 National Institute Of Advanced Industrial Science Stacked body of isotope diamond
JP5554449B2 (ja) * 2010-06-03 2014-07-23 エレメント シックス リミテッド ダイヤモンド工具

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0483752A2 (en) * 1990-10-30 1992-05-06 Shin-Etsu Quartz Products Co., Ltd. Optical member made of high-purity and transparent synthetic silica glass and method for production thereof and blank thereof
JPH04240784A (ja) * 1991-01-24 1992-08-28 Sumitomo Electric Ind Ltd 紫外線発光素子
JPH06167461A (ja) * 1992-11-30 1994-06-14 Fujitsu Ltd バイアホール検査装置
JPH0959091A (ja) * 1995-08-24 1997-03-04 Tokyo Gas Co Ltd ダイヤモンド結晶およびその製造方法
WO1999034646A1 (fr) * 1997-12-29 1999-07-08 Tokyo Gas Co., Ltd. Dispositif emetteur de rayons ultraviolets a diamant par injection de courant
WO2001004965A1 (fr) * 1999-07-09 2001-01-18 Tokyo Gas Co., Ltd. Dispositif emetteur de rayons ultraviolets a diamant
JP2001085734A (ja) * 1999-07-12 2001-03-30 Tokyo Gas Co Ltd ダイヤモンド紫外線発光素子を用いた装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3584450B2 (ja) * 1995-03-17 2004-11-04 住友電気工業株式会社 レーザー発振素子及びレーザー発振装置
JP2000174166A (ja) * 1998-10-02 2000-06-23 Sumitomo Electric Ind Ltd 半導体搭載パッケ―ジ
JP2002530803A (ja) * 1998-11-12 2002-09-17 アルカン・テクノロジー・アンド・マネージメント・リミテッド 耐性の高い表面を有する反射体
JP3411989B2 (ja) * 2000-03-28 2003-06-03 独立行政法人産業技術総合研究所 ダイヤモンド半導体発光素子
US6747406B1 (en) * 2000-08-07 2004-06-08 General Electric Company LED cross-linkable phospor coating

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0483752A2 (en) * 1990-10-30 1992-05-06 Shin-Etsu Quartz Products Co., Ltd. Optical member made of high-purity and transparent synthetic silica glass and method for production thereof and blank thereof
JPH04240784A (ja) * 1991-01-24 1992-08-28 Sumitomo Electric Ind Ltd 紫外線発光素子
JPH06167461A (ja) * 1992-11-30 1994-06-14 Fujitsu Ltd バイアホール検査装置
JPH0959091A (ja) * 1995-08-24 1997-03-04 Tokyo Gas Co Ltd ダイヤモンド結晶およびその製造方法
WO1999034646A1 (fr) * 1997-12-29 1999-07-08 Tokyo Gas Co., Ltd. Dispositif emetteur de rayons ultraviolets a diamant par injection de courant
WO2001004965A1 (fr) * 1999-07-09 2001-01-18 Tokyo Gas Co., Ltd. Dispositif emetteur de rayons ultraviolets a diamant
JP2001085734A (ja) * 1999-07-12 2001-03-30 Tokyo Gas Co Ltd ダイヤモンド紫外線発光素子を用いた装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
COLLINS A.T. ET AL.: "Indirect energy gap of 13C diamond", PHYS. REV. LETT., vol. 65, no. 7, 13 August 1990 (1990-08-13), pages 891 - 894, XP002958975 *
OKUSHI H.: "Wide Band Gap Layers", June 2001, ABSTRACT BOOK. 3RD INTER. CONF., article "Diamond layers for active electron devices", pages: 42 - 44, XP002958976 *
THONKE K. ET AL.: "Electron-hole drops in synthetic diamond", DIAMOND AND RELATED MATERIALS, vol. 9, no. 3-6, 2000, pages 428 - 431, XP004199790 *
ZAIRYO KAGAKUBU: "Senshin handotai zairyo gijutsu labo, diamond deno exciton hakko no hisenkei koka o hakken - diamond ni yoru shigaisen hakko device-ka ga genjitsu ni-", ETL NEWS, vol. 605, June 2000 (2000-06-01), pages 2 - 5, XP002958974 *

Also Published As

Publication number Publication date
EP1414079A1 (en) 2004-04-28
JP2003051609A (ja) 2003-02-21
US20040155573A1 (en) 2004-08-12

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