WO2003012166A2 - Procede destine a la production d'un materiau de base plat en metal, materiau de base ainsi produit et son utilisation - Google Patents

Procede destine a la production d'un materiau de base plat en metal, materiau de base ainsi produit et son utilisation Download PDF

Info

Publication number
WO2003012166A2
WO2003012166A2 PCT/DE2002/002687 DE0202687W WO03012166A2 WO 2003012166 A2 WO2003012166 A2 WO 2003012166A2 DE 0202687 W DE0202687 W DE 0202687W WO 03012166 A2 WO03012166 A2 WO 03012166A2
Authority
WO
WIPO (PCT)
Prior art keywords
layer
base material
substrate
metal
superconducting
Prior art date
Application number
PCT/DE2002/002687
Other languages
German (de)
English (en)
Other versions
WO2003012166A3 (fr
Inventor
Ursus KRÜGER
Marc De Vogelaere
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2003012166A2 publication Critical patent/WO2003012166A2/fr
Publication of WO2003012166A3 publication Critical patent/WO2003012166A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/20—Separation of the formed objects from the electrodes with no destruction of said electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate

Definitions

  • the invention relates to a method for producing a flat base material made of metal for applying a superconducting layer.
  • RABITS Rolling Assisted Biaxial Testuring of Substrates
  • the invention has for its object to provide a method for producing a flat base material for applying a superconducting layer, which can not only be carried out comparatively inexpensively, but which can also be used to produce base material with which superconducting, in particular high-temperature superconducting components with very good superconducting properties can be produced let create.
  • a metal layer is galvanically produced on a single-crystalline substrate and the metal layer is detached from the substrate to obtain the base material.
  • Microx can be produced by a simple electroplating process and subsequent detachment of the metal layer from the matrix or from the substrate, a two-dimensional base material made of metal, which is used to apply a layer made of a superconducting material, in particular a high-temperature superconducting material Formation of a superconductor is very suitable because this base material has the favorable texture of the substrate for this purpose. Another important advantage is that the - expensive substrate is reusable.
  • a metallic auxiliary layer is advantageously formed on the substrate prior to the galvanic production of the metal layer, and at least the metal layer is detached from the substrate to obtain the base material.
  • the auxiliary layer can advantageously by means of z. B. PCT (Physical Vapor Deposition). The auxiliary layer can therefore remain on the substrate; if it is replaced in each case, then the Detach the double layer more easily from the substrate without damage and then process it further.
  • a metallic auxiliary layer is formed on the substrate before the galvanic production of the metal layer, and at least one insulating buffer layer is applied to the metal layer and, in turn, the superconducting layer thereon, and then the layer composite thus formed, at least including the metal layer detached from the substrate. From this composite layer - with us without an auxiliary layer - superconducting components can be obtained by relatively simple mechanical structuring.
  • the layered composite can in a simple manner - either before it is detached from this substrate or later - by a metal coating, e.g. B. from a precious metal, to be able to manufacture a superconducting device with a shunt.
  • a metal coating e.g. B. from a precious metal
  • This metal pad can be formed in different ways. It is considered to be particularly advantageous if the metal coating is produced by means of PVD (Physical Vapor Deposition).
  • YBCO YBa 2 Cu 3 0 7
  • sapphire is advantageously used as the substrate.
  • Titanium which is advantageously applied by means of PVD, is particularly suitable as an auxiliary in such a substrate.
  • metal layers made of different metals can be produced on the substrate.
  • the application of a metal layer made of nickel or a nickel alloy can be advantageous.
  • the invention is also based on the object of specifying a flat base material which can be produced particularly cost-effectively and is particularly well suited for the production of superconductors.
  • the areal base material is a base material that is electroplated by means of a single-crystalline substrate.
  • the flat base material advantageously consists of nickel or a nickel alloy or of silver or copper or of a silver or copper alloy.
  • a sheet-like base material made of metal such as. B. silver or a silver alloy, considered as a carrier for a layer of a superconducting material to form a superconducting conductor.
  • a superconducting conductor causes a base material made of silver or copper no disturbing influences when used in alternating magnetic fields.
  • a single-crystalline substrate is required in any case, which can be made of sapphire, for example.
  • the illustration 1 shows a section of a single-crystalline substrate 1, on which an auxiliary layer 2 z. B. is made of titanium. Subsequently - as the illustration 2 shows - a metal layer 3 is galvanically produced on the auxiliary layer 2, which has taken over the texture of the substrate 1.
  • the structure of the two layers 2 and 3 can be detached from the substrate 1 in order to continue to be used as the base material for superconducting components.
  • the method according to the invention can also be carried out or continued such that initially - according to the partial representation of epitaxial buffer layers 4 and 5 made of z. B. Cu0 2 and YSZ are applied to the epitaxial metal layer 3, on which then again (see. Partial representation 4) z. B. a high-temperature superconducting layer 6 is produced from, for example, YBCo by means of PVD.
  • the layer composite produced in this way can be pulled off the substrate 1 and, after mechanical structuring, form superconducting components. If such components are to have an integrated electrical shunt, then, according to partial illustration 5, a metal coating 7, for example made of gold, is applied to the epitaxial superconducting layer 6 before detaching by means of PVD.
  • the partial representation 6 shows the layer composite after the detachment in front of the substrate 1.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

La présente invention concerne un procédé destiné à la production d'un matériau de base plat en métal pour permettre l'application d'une couche supraconductrice. L'invention a pour objet de rendre ce procédé plus économique. A cet effet, une couche métallique (3) est appliquée par galvanisation sur un substrat monocristallin (1), et la couche métallique (3) est séparée du substrat (1) pour donner la matériau de base. L'invention concerne également un matériau de base produit grâce audit procédé ainsi que son utilisation.
PCT/DE2002/002687 2001-07-25 2002-07-17 Procede destine a la production d'un materiau de base plat en metal, materiau de base ainsi produit et son utilisation WO2003012166A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10136891A DE10136891B4 (de) 2001-07-25 2001-07-25 Verfahren zum Erzeugen eines flächenhaften Basismaterials aus Metall
DE10136891.7 2001-07-25

Publications (2)

Publication Number Publication Date
WO2003012166A2 true WO2003012166A2 (fr) 2003-02-13
WO2003012166A3 WO2003012166A3 (fr) 2003-10-16

Family

ID=7693460

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002687 WO2003012166A2 (fr) 2001-07-25 2002-07-17 Procede destine a la production d'un materiau de base plat en metal, materiau de base ainsi produit et son utilisation

Country Status (2)

Country Link
DE (1) DE10136891B4 (fr)
WO (1) WO2003012166A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005031043A1 (fr) * 2003-09-29 2005-04-07 Siemens Aktiengesellschaft Procede et installation de production pour produire un composant stratifie
WO2003012172A3 (fr) * 2001-07-25 2005-08-18 Siemens Ag Procede et dispositif destines a la production d'une bande texturee de metal
US9468003B2 (en) 2008-08-11 2016-10-11 Koninklijke Philips N.V. Medium access control (MAC) protocol for body area networks

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0612114B1 (fr) * 1993-02-15 1997-05-14 Sumitomo Electric Industries, Ltd. Procédé pour former une couche mince structurée en oxyde supraconducteur
GB2336849B (en) * 1998-04-27 2003-02-26 Telcon Ltd Substrate materials
KR100352976B1 (ko) * 1999-12-24 2002-09-18 한국기계연구원 전기도금법에 의한 2축 집합조직을 갖는 니켈 도금층 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US5968877A (en) * 1995-04-10 1999-10-19 Lockheed Martin Energy Research Corp High Tc YBCO superconductor deposited on biaxially textured Ni substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch, Week 200317 Derwent Publications Ltd., London, GB; Class M11, AN 2002-031979 XP002249052 & KR 2001 063 692 A (KOREA INST OF MACHINENRY & MAT), 9. Juli 2001 (2001-07-09) -& US 6 346 181 B1 (KOREA INST OF MACHINERY AND MAT) 12. Februar 2002 (2002-02-12) *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003012172A3 (fr) * 2001-07-25 2005-08-18 Siemens Ag Procede et dispositif destines a la production d'une bande texturee de metal
US7666290B2 (en) 2001-07-25 2010-02-23 Siemens Aktiengesellschaft Method and device for producing a textured metal strip
WO2005031043A1 (fr) * 2003-09-29 2005-04-07 Siemens Aktiengesellschaft Procede et installation de production pour produire un composant stratifie
US9468003B2 (en) 2008-08-11 2016-10-11 Koninklijke Philips N.V. Medium access control (MAC) protocol for body area networks

Also Published As

Publication number Publication date
WO2003012166A3 (fr) 2003-10-16
DE10136891A1 (de) 2003-02-20
DE10136891B4 (de) 2004-07-22

Similar Documents

Publication Publication Date Title
DE69737533T2 (de) Verbesserte struktur für laminierte supraleitende keramische verbundleiter und herstellungsverfahren
DE102005010095B4 (de) Metallband mit niedrigem Ummagnetisierungsverlust und biaxialer Textur sowie Herstellungsverfahren dafür
DE2333893C3 (de) Verfahren zum Herstellen eines Supraleiters mit einer aus wenigstens zwei Elementen bestehenden supraleitenden intermetallischen Verbindung
EP0004289A2 (fr) Procédé pour lier un premier dispositif à circuit intégré ayant une pluralité de points de connexion à un second dispositif à circuit intégré
DE2554691C2 (de) Verfahren zum Herstellen elektrischer Leiter auf einem isolierenden Substrat und danach hergestellte Dünnschichtschaltung
DE2032872B2 (de) Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
DE112008000039T5 (de) Supraleitendes Band und Verfahren zu dessen Herstellung
DE2719731A1 (de) Mehrschichtschaltung
DE112018001697T5 (de) Verbindungsstruktur
EP1923926B1 (fr) Procédé de fabrication pour un conducteur électrique supraconducteur
DE10136890B4 (de) Verfahren und Vorrichtung zum Erzeugen eines kristallstrukturell texturierten Bandes aus Metall sowie Band
DE2313106A1 (de) Verfahren zum herstellen eines elektrischen verbindungssystems
DE3243265C2 (de) Supraleitende Materialien und Verfahren zu deren Herstellung
DE3315062C2 (fr)
DE10136891B4 (de) Verfahren zum Erzeugen eines flächenhaften Basismaterials aus Metall
DE19740964A1 (de) Verfahren zum Herstellen eines Substrates als Träger für eine, insbesondere supraleitende, Funktionsschicht sowie einer Struktur mit einem Supraleiter
DE4442688C1 (de) Verfahren zur Herstellung eines Hochtemperatursupraleitungs- Feldeffekttransistors mit einer dicken supraleitenden Kanalschicht
DE102012208681A1 (de) Zinnbeschichtung, zugehöriges Kontaktelement und Verfahren zum Aufbringen einer Zinnbeschichtung
DE4120258A1 (de) Verfahren zur herstellung einer schicht aus einem hochtemperatursupraleiter-material auf einem silizium-substrat
DE2248705C3 (de) Verfahren zur Herstellung eines Supraleiters
DE10250951B4 (de) Verfahren zur Herstellung eines Bandes mit texturierter Metallschicht
DE10132125A1 (de) Verfahren zum Erzeugen einer texturierten Metallschicht und texturierte Metallschicht
DE112008001094T5 (de) Plattiertes Element und Verfahren zum Herstellen desselben
DE706840C (de) Elektrischer, insbesondere niederohmiger Widerstand mit keramischem Widerstandstraeger und vollstaendig in Emaille eingebetteten Widerstandskoerpern
DE19817390A1 (de) Verfahren zur Herstellung bandförmiger Hochtemperatur-Supraleiter

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP