WO2003009374A1 - Procede de fabrication d'un dispositif a semi-conducteur - Google Patents

Procede de fabrication d'un dispositif a semi-conducteur Download PDF

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Publication number
WO2003009374A1
WO2003009374A1 PCT/JP2002/004255 JP0204255W WO03009374A1 WO 2003009374 A1 WO2003009374 A1 WO 2003009374A1 JP 0204255 W JP0204255 W JP 0204255W WO 03009374 A1 WO03009374 A1 WO 03009374A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
production method
field effect
effect transistor
impurities
Prior art date
Application number
PCT/JP2002/004255
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Sakai
Kazuyoshi Shiba
Shiro Kamohara
Nobue Nakajima
Kenichi Kuroda
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Publication of WO2003009374A1 publication Critical patent/WO2003009374A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

L'invention concerne un procédé consistant à former un film d'isolation de grille (3) et une électrode grille (4a) sur un substrat semi-conducteur (1S) en vue d'améliorer les propriétés électriques d'un transistor à effet de champ, puis à introduire des impuretés destinées à former la zone de canal (6) du transistor à effet de champ.
PCT/JP2002/004255 2001-07-16 2002-04-26 Procede de fabrication d'un dispositif a semi-conducteur WO2003009374A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001214811A JP2003031680A (ja) 2001-07-16 2001-07-16 半導体装置の製造方法
JP2001-214811 2001-07-16

Publications (1)

Publication Number Publication Date
WO2003009374A1 true WO2003009374A1 (fr) 2003-01-30

Family

ID=19049568

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/004255 WO2003009374A1 (fr) 2001-07-16 2002-04-26 Procede de fabrication d'un dispositif a semi-conducteur

Country Status (2)

Country Link
JP (1) JP2003031680A (fr)
WO (1) WO2003009374A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7825488B2 (en) * 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
JP4718104B2 (ja) * 2003-02-17 2011-07-06 ルネサスエレクトロニクス株式会社 半導体装置
JP2010153683A (ja) * 2008-12-26 2010-07-08 Hitachi Ltd 半導体装置
WO2013027524A1 (fr) * 2011-08-24 2013-02-28 シャープ株式会社 Élément d'imagerie à semi-conducteur

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032354A (ja) * 1983-08-02 1985-02-19 Matsushita Electronics Corp 半導体集積回路
JPH0321074A (ja) * 1989-06-19 1991-01-29 Hitachi Ltd 半導体集積回路装置
JPH03155156A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 半導体装置の製造方法
JPH07135314A (ja) * 1993-11-11 1995-05-23 Asahi Chem Ind Co Ltd 半導体装置の製造方法
JPH08186179A (ja) * 1994-12-28 1996-07-16 Sony Corp 相補型半導体装置
JP2001085533A (ja) * 1999-09-14 2001-03-30 Denso Corp 半導体装置及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032354A (ja) * 1983-08-02 1985-02-19 Matsushita Electronics Corp 半導体集積回路
JPH0321074A (ja) * 1989-06-19 1991-01-29 Hitachi Ltd 半導体集積回路装置
JPH03155156A (ja) * 1989-11-13 1991-07-03 Seiko Epson Corp 半導体装置の製造方法
JPH07135314A (ja) * 1993-11-11 1995-05-23 Asahi Chem Ind Co Ltd 半導体装置の製造方法
JPH08186179A (ja) * 1994-12-28 1996-07-16 Sony Corp 相補型半導体装置
JP2001085533A (ja) * 1999-09-14 2001-03-30 Denso Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2003031680A (ja) 2003-01-31

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