WO2003009374A1 - Production method of semiconductor device - Google Patents
Production method of semiconductor device Download PDFInfo
- Publication number
- WO2003009374A1 WO2003009374A1 PCT/JP2002/004255 JP0204255W WO03009374A1 WO 2003009374 A1 WO2003009374 A1 WO 2003009374A1 JP 0204255 W JP0204255 W JP 0204255W WO 03009374 A1 WO03009374 A1 WO 03009374A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- production method
- field effect
- effect transistor
- impurities
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
A gate insulation film (3) and a gate electrode (4a) are formed on a semiconductor substrate (1S) for the purpose of enhancing the electrical characteristics of a field effect transistor, and then impurities for forming the channel area (6) of the field effect transistor are introduced.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001214811A JP2003031680A (en) | 2001-07-16 | 2001-07-16 | Method for manufacturing semiconductor device |
JP2001-214811 | 2001-07-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003009374A1 true WO2003009374A1 (en) | 2003-01-30 |
Family
ID=19049568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/004255 WO2003009374A1 (en) | 2001-07-16 | 2002-04-26 | Production method of semiconductor device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2003031680A (en) |
WO (1) | WO2003009374A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7825488B2 (en) * | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
JP4718104B2 (en) * | 2003-02-17 | 2011-07-06 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
JP2010153683A (en) * | 2008-12-26 | 2010-07-08 | Hitachi Ltd | Semiconductor device |
WO2013027524A1 (en) * | 2011-08-24 | 2013-02-28 | シャープ株式会社 | Solid-state imaging element |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6032354A (en) * | 1983-08-02 | 1985-02-19 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPH0321074A (en) * | 1989-06-19 | 1991-01-29 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH03155156A (en) * | 1989-11-13 | 1991-07-03 | Seiko Epson Corp | Manufacture of semiconductor device |
JPH07135314A (en) * | 1993-11-11 | 1995-05-23 | Asahi Chem Ind Co Ltd | Fabrication of semiconductor device |
JPH08186179A (en) * | 1994-12-28 | 1996-07-16 | Sony Corp | Complementary semiconductor device |
JP2001085533A (en) * | 1999-09-14 | 2001-03-30 | Denso Corp | Semiconductor device and manufactue thereof |
-
2001
- 2001-07-16 JP JP2001214811A patent/JP2003031680A/en active Pending
-
2002
- 2002-04-26 WO PCT/JP2002/004255 patent/WO2003009374A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6032354A (en) * | 1983-08-02 | 1985-02-19 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPH0321074A (en) * | 1989-06-19 | 1991-01-29 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH03155156A (en) * | 1989-11-13 | 1991-07-03 | Seiko Epson Corp | Manufacture of semiconductor device |
JPH07135314A (en) * | 1993-11-11 | 1995-05-23 | Asahi Chem Ind Co Ltd | Fabrication of semiconductor device |
JPH08186179A (en) * | 1994-12-28 | 1996-07-16 | Sony Corp | Complementary semiconductor device |
JP2001085533A (en) * | 1999-09-14 | 2001-03-30 | Denso Corp | Semiconductor device and manufactue thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2003031680A (en) | 2003-01-31 |
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121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase |