WO2003005511A2 - Laser integre a cavite de fabry perot - Google Patents
Laser integre a cavite de fabry perot Download PDFInfo
- Publication number
- WO2003005511A2 WO2003005511A2 PCT/FR2002/002280 FR0202280W WO03005511A2 WO 2003005511 A2 WO2003005511 A2 WO 2003005511A2 FR 0202280 W FR0202280 W FR 0202280W WO 03005511 A2 WO03005511 A2 WO 03005511A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser
- section
- component
- reflector
- cavity
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
Definitions
- the invention lies in the field of integrated monolithic components comprising several sections including a section constituting a laser with a Fabry Pérot cavity, and at least one other section close to said laser section. It relates to the production of a mirror between the laser and a neighboring section.
- the light emitted by the laser is coupled to the modulator, for example via an optical fiber.
- an attempt is made to control the laser and the temperature modulator so as to guarantee a single mode operation of the laser.
- the wavelength emitted remains constant.
- a semi-reflecting face constituting an exit face of a Fabry-Perot cavity of the laser is treated to be reflective at the operating wavelength of the laser.
- the present invention relates to a laser and to a component associated with it, for example a modulator in which a single-mode operation of the laser is not essential, for example a laser used for short distance transmissions of the order of 2 km or less.
- a laser does not require temperature control.
- the operation is no longer single mode and it is important that the output semi-reflecting mirror allows such multimode operation.
- the reflector must have a flat response in reflectivity, at least for the wavelengths capable of being emitted by the laser at all the operating temperatures at which it is capable of operating.
- the invention relates to an integrated monolithic component comprising several sections including a section constituting a laser having a cavity delimited by an external face of the component and by a partially reflecting reflector, and another section adjacent to said laser section, component characterized in that the partially reflecting reflector is disposed between the laser section and said other neighboring section and in that this reflector allows multimode operation of the laser.
- the reflector is constituted by a Bragg grating allowing said multimode operation.
- FIG. 1 schematically shows a section of a component according to a first embodiment of the invention carried out perpendicular to the plane of the layers parallel to a direction of light propagation between two neighboring sections of the component;
- FIG. 2 schematically shows a section of a component according to the preferred embodiment of the invention carried out perpendicular to the plane of the layers parallel to a direction of light propagation between two neighboring sections of the component.
- a monolithic component 1 according to the invention is made up of two sections 21, 22, including a first section 21 formed by a laser with a Fabry Pérot cavity and a second section 22 formed by a subcomponent of component 1.
- the first section 21 formed by a semiconductor laser consists of a stack of layers 2, 3, 4, 5, 6 on a substrate.
- An active layer 4 for example of GalnAsP and layers 3, 5 of electrical and optical confinement.
- the stack of layers ends above and below by two surface layers, 6, 2 respectively, of electrical contact used for the polarization of the laser section 21.
- the laser layer 4 is bordered above and below by the containment layers 5, 3 respectively.
- a laser cavity 7 is formed in a known manner by notching the layers, including the active layer 4, thus producing mirror faces 8, 9 which are treated to present the necessary reflectivity coefficients, to arrange the active layer 4 in a cavity 7 of Fabry Pérot.
- the laser section 21 is integrated on the same substrate with the other section 22, in the form of a subcomponent, for example a modulator or an amplifier or even a filter.
- One of the mirror faces 9 of the cavity 7 is an external face of the component, for example obtained by cleavage, while the opposite mirror face 8 constitutes an exit face which is produced by etching 12 in the layers from the 'one of the surface layers of the component, for example 6, up to the active layer 4 and possibly beyond.
- a reflective treatment carried out on the etched output face 8 is such that its reflectivity response is flat at least for operating wavelengths delivered by the laser over the temperature range at which this laser is capable of function. In this way the operation of the laser is multimode and it is not necessary to control it in temperature by a usual servo device.
- the etching introduces a constant distance between the reflectors 8 and 18 which results in a variable phase shift as a function of the operating wavelength. Therefore, the setting is only good for one of the operating wavelengths of the cavity 7, for example the wavelength corresponding to the most likely operating temperature and the setting is less good for the others. operating temperatures.
- FIG. 2 represents a monolithic component 10.
- This component 10 is analogous in its architecture to the component 1 represented in FIG. 1.
- the elements having the same function as those represented in FIG. 1 bear the same reference number. Consequently, these elements will not be described again.
- the difference between the component 1 represented in FIG. 1 and the component 10 according to the preferred embodiment of the invention represented in FIG. 2 is constituted by the junction between the two sections 21, 22 which no longer includes the engraving 12. This engraving has been replaced by a reflective grating 11 from Bragg. This network is carried out in a known manner after the deposition of the active layer 4.
- the etching depth of the lines constituting the network together is such that the bandwidth of the network allows multimode operation of the laser cavity 7.
- This bandwidth may be of the order of one a few tens of nanometers, for example 10 to 20 nanometers.
- the bandwidth of a cleaved face may be of the order of a few hundred nanometers, a bandwidth of a few tens of nanometers covering at least the bandwidth of the subcomponent constituting the second section 22 n ' will generally bring no penalty.
- the reflectivity of such a network could be of the order of 20 to 25% in the working band.
- the second section 22 integrated on the component 10 is constituted by a subcomponent in itself known, an electrooptical modulator, for example electro-absorbent.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/362,754 US7065120B2 (en) | 2001-07-02 | 2002-07-01 | Integrated laser with Perot-Fabry cavity |
EP02767538A EP1415375A2 (fr) | 2001-07-02 | 2002-07-01 | Laser integre a cavite de fabry perot |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0108734A FR2826789B1 (fr) | 2001-07-02 | 2001-07-02 | Laser integre a cavite de fabry perot |
FR01/08734 | 2001-07-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003005511A2 true WO2003005511A2 (fr) | 2003-01-16 |
WO2003005511A3 WO2003005511A3 (fr) | 2003-05-15 |
Family
ID=8865015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2002/002280 WO2003005511A2 (fr) | 2001-07-02 | 2002-07-01 | Laser integre a cavite de fabry perot |
Country Status (4)
Country | Link |
---|---|
US (1) | US7065120B2 (fr) |
EP (1) | EP1415375A2 (fr) |
FR (1) | FR2826789B1 (fr) |
WO (1) | WO2003005511A2 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2909491B1 (fr) | 2006-12-05 | 2010-04-23 | Commissariat Energie Atomique | Dispositif laser a source laser et guide d'onde couples |
FR3025056B1 (fr) | 2014-08-22 | 2016-09-09 | Commissariat Energie Atomique | Dispositif laser et procede de fabrication d'un tel dispositif laser |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4977567A (en) * | 1988-10-28 | 1990-12-11 | Siemens Aktiengesellschaft | Semiconductor laser arrangement for high output powers in the lateral fundamental mode |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60187078A (ja) * | 1984-03-06 | 1985-09-24 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS6233489A (ja) * | 1985-08-07 | 1987-02-13 | Kokusai Denshin Denwa Co Ltd <Kdd> | 発光装置 |
US4695790A (en) * | 1986-01-02 | 1987-09-22 | General Dynamics Electronics Division | RF frequency spectrum analyzer subsystem |
JPS63116489A (ja) * | 1986-11-05 | 1988-05-20 | Mitsubishi Electric Corp | 光集積回路 |
US5144637A (en) * | 1990-04-30 | 1992-09-01 | At&T Bell Laboratories | Inline diplex lightwave transceiver |
US5793521A (en) * | 1992-09-21 | 1998-08-11 | Sdl Inc. | Differentially patterned pumped optical semiconductor gain media |
US5463647A (en) * | 1993-02-25 | 1995-10-31 | The United States Of America As Represented By The Secretary Of The Air Force | Broadband multi-wavelength narrow linewidth laser source using an electro-optic modulator |
US5802084A (en) * | 1994-11-14 | 1998-09-01 | The Regents Of The University Of California | Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers |
US5905745A (en) * | 1997-03-17 | 1999-05-18 | Sdl, Inc. | Noise suppression in cladding pumped fiber lasers |
US6650673B2 (en) * | 1998-12-15 | 2003-11-18 | Bookham Technology, Plc | Generation of short optical pulses using strongly complex coupled DFB lasers |
US6678301B1 (en) * | 2000-07-14 | 2004-01-13 | Triquint Technology Holding Co. | Apparatus and method for minimizing wavelength chirp of laser devices |
-
2001
- 2001-07-02 FR FR0108734A patent/FR2826789B1/fr not_active Expired - Fee Related
-
2002
- 2002-07-01 US US10/362,754 patent/US7065120B2/en not_active Expired - Lifetime
- 2002-07-01 EP EP02767538A patent/EP1415375A2/fr not_active Withdrawn
- 2002-07-01 WO PCT/FR2002/002280 patent/WO2003005511A2/fr not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4977567A (en) * | 1988-10-28 | 1990-12-11 | Siemens Aktiengesellschaft | Semiconductor laser arrangement for high output powers in the lateral fundamental mode |
Non-Patent Citations (5)
Title |
---|
BISSESSUR H ET AL: "WDM OPERATION OF A HYBRID EMITTER INTEGRATING A WIDE-BANDWIDTH ON-CHIP MIRROR" IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 5, no. 3, mai 1999 (1999-05), pages 476-479, XP000930527 ISSN: 1077-260X * |
LAMMERT R M ET AL: "MQW DBR LASERS WITH MONOLITHICALLY INTEGRATED EXTERNAL-CAVITY ELECTROABSORPTION MODULATORS FABRICATED WITHOUT MODIFICATION OF THE ACTIVE REGION" IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 9, no. 5, 1 mai 1997 (1997-05-01), pages 566-568, XP000677326 ISSN: 1041-1135 * |
PATENT ABSTRACTS OF JAPAN vol. 010, no. 027 (E-378), 4 février 1986 (1986-02-04) & JP 60 187078 A (MATSUSHITA DENKI SANGYO KK), 24 septembre 1985 (1985-09-24) * |
PATENT ABSTRACTS OF JAPAN vol. 012, no. 362 (E-663), 28 septembre 1988 (1988-09-28) & JP 63 116489 A (MITSUBISHI ELECTRIC CORP), 20 mai 1988 (1988-05-20) * |
REICHMANN K C ET AL: "2.5 GB/S TRANSMISSION OVER 674 KM AT MULTIPLE WAVELENGTHS USING A TUNABLE DBR LASER WITH AN INTEGRATED ELECTROABSORPTION MODULATOR" IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 5, no. 9, 1 septembre 1993 (1993-09-01), pages 1098-1100, XP000414187 ISSN: 1041-1135 * |
Also Published As
Publication number | Publication date |
---|---|
EP1415375A2 (fr) | 2004-05-06 |
FR2826789A1 (fr) | 2003-01-03 |
WO2003005511A3 (fr) | 2003-05-15 |
US7065120B2 (en) | 2006-06-20 |
US20030179796A1 (en) | 2003-09-25 |
FR2826789B1 (fr) | 2004-04-09 |
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