WO2003005511A3 - Laser integre a cavite de fabry perot - Google Patents
Laser integre a cavite de fabry perot Download PDFInfo
- Publication number
- WO2003005511A3 WO2003005511A3 PCT/FR2002/002280 FR0202280W WO03005511A3 WO 2003005511 A3 WO2003005511 A3 WO 2003005511A3 FR 0202280 W FR0202280 W FR 0202280W WO 03005511 A3 WO03005511 A3 WO 03005511A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser
- section
- perot
- reflector
- integrated laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/362,754 US7065120B2 (en) | 2001-07-02 | 2002-07-01 | Integrated laser with Perot-Fabry cavity |
EP02767538A EP1415375A2 (fr) | 2001-07-02 | 2002-07-01 | Laser integre a cavite de fabry perot |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR01/08734 | 2001-07-02 | ||
FR0108734A FR2826789B1 (fr) | 2001-07-02 | 2001-07-02 | Laser integre a cavite de fabry perot |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003005511A2 WO2003005511A2 (fr) | 2003-01-16 |
WO2003005511A3 true WO2003005511A3 (fr) | 2003-05-15 |
Family
ID=8865015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2002/002280 WO2003005511A2 (fr) | 2001-07-02 | 2002-07-01 | Laser integre a cavite de fabry perot |
Country Status (4)
Country | Link |
---|---|
US (1) | US7065120B2 (fr) |
EP (1) | EP1415375A2 (fr) |
FR (1) | FR2826789B1 (fr) |
WO (1) | WO2003005511A2 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2909491B1 (fr) | 2006-12-05 | 2010-04-23 | Commissariat Energie Atomique | Dispositif laser a source laser et guide d'onde couples |
FR3025056B1 (fr) | 2014-08-22 | 2016-09-09 | Commissariat Energie Atomique | Dispositif laser et procede de fabrication d'un tel dispositif laser |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60187078A (ja) * | 1984-03-06 | 1985-09-24 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS63116489A (ja) * | 1986-11-05 | 1988-05-20 | Mitsubishi Electric Corp | 光集積回路 |
US4977567A (en) * | 1988-10-28 | 1990-12-11 | Siemens Aktiengesellschaft | Semiconductor laser arrangement for high output powers in the lateral fundamental mode |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6233489A (ja) * | 1985-08-07 | 1987-02-13 | Kokusai Denshin Denwa Co Ltd <Kdd> | 発光装置 |
US4695790A (en) * | 1986-01-02 | 1987-09-22 | General Dynamics Electronics Division | RF frequency spectrum analyzer subsystem |
US5144637A (en) * | 1990-04-30 | 1992-09-01 | At&T Bell Laboratories | Inline diplex lightwave transceiver |
US5793521A (en) * | 1992-09-21 | 1998-08-11 | Sdl Inc. | Differentially patterned pumped optical semiconductor gain media |
US5463647A (en) * | 1993-02-25 | 1995-10-31 | The United States Of America As Represented By The Secretary Of The Air Force | Broadband multi-wavelength narrow linewidth laser source using an electro-optic modulator |
US5802084A (en) * | 1994-11-14 | 1998-09-01 | The Regents Of The University Of California | Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers |
US5905745A (en) * | 1997-03-17 | 1999-05-18 | Sdl, Inc. | Noise suppression in cladding pumped fiber lasers |
US6650673B2 (en) * | 1998-12-15 | 2003-11-18 | Bookham Technology, Plc | Generation of short optical pulses using strongly complex coupled DFB lasers |
US6678301B1 (en) * | 2000-07-14 | 2004-01-13 | Triquint Technology Holding Co. | Apparatus and method for minimizing wavelength chirp of laser devices |
-
2001
- 2001-07-02 FR FR0108734A patent/FR2826789B1/fr not_active Expired - Fee Related
-
2002
- 2002-07-01 EP EP02767538A patent/EP1415375A2/fr not_active Withdrawn
- 2002-07-01 US US10/362,754 patent/US7065120B2/en not_active Expired - Lifetime
- 2002-07-01 WO PCT/FR2002/002280 patent/WO2003005511A2/fr not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60187078A (ja) * | 1984-03-06 | 1985-09-24 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS63116489A (ja) * | 1986-11-05 | 1988-05-20 | Mitsubishi Electric Corp | 光集積回路 |
US4977567A (en) * | 1988-10-28 | 1990-12-11 | Siemens Aktiengesellschaft | Semiconductor laser arrangement for high output powers in the lateral fundamental mode |
Non-Patent Citations (5)
Title |
---|
BISSESSUR H ET AL: "WDM OPERATION OF A HYBRID EMITTER INTEGRATING A WIDE-BANDWIDTH ON-CHIP MIRROR", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 5, no. 3, May 1999 (1999-05-01), pages 476 - 479, XP000930527, ISSN: 1077-260X * |
LAMMERT R M ET AL: "MQW DBR LASERS WITH MONOLITHICALLY INTEGRATED EXTERNAL-CAVITY ELECTROABSORPTION MODULATORS FABRICATED WITHOUT MODIFICATION OF THE ACTIVE REGION", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 9, no. 5, 1 May 1997 (1997-05-01), pages 566 - 568, XP000677326, ISSN: 1041-1135 * |
PATENT ABSTRACTS OF JAPAN vol. 010, no. 027 (E - 378) 4 February 1986 (1986-02-04) * |
PATENT ABSTRACTS OF JAPAN vol. 012, no. 362 (E - 663) 28 September 1988 (1988-09-28) * |
REICHMANN K C ET AL: "2.5 GB/S TRANSMISSION OVER 674 KM AT MULTIPLE WAVELENGTHS USING A TUNABLE DBR LASER WITH AN INTEGRATED ELECTROABSORPTION MODULATOR", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 5, no. 9, 1 September 1993 (1993-09-01), pages 1098 - 1100, XP000414187, ISSN: 1041-1135 * |
Also Published As
Publication number | Publication date |
---|---|
FR2826789A1 (fr) | 2003-01-03 |
FR2826789B1 (fr) | 2004-04-09 |
US20030179796A1 (en) | 2003-09-25 |
WO2003005511A2 (fr) | 2003-01-16 |
EP1415375A2 (fr) | 2004-05-06 |
US7065120B2 (en) | 2006-06-20 |
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