WO2002103861A1 - Source laser stabilisee en frequence - Google Patents
Source laser stabilisee en frequence Download PDFInfo
- Publication number
- WO2002103861A1 WO2002103861A1 PCT/FR2002/002094 FR0202094W WO02103861A1 WO 2002103861 A1 WO2002103861 A1 WO 2002103861A1 FR 0202094 W FR0202094 W FR 0202094W WO 02103861 A1 WO02103861 A1 WO 02103861A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser
- laser source
- source according
- frequency
- cavity
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1392—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using a passive reference, e.g. absorption cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1398—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using a supplementary modulation of the output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
Definitions
- the solid laser 1 Upstream of the radiator 106 / sapphire window 105 / entry mirror 103 / glass rod 101 assembly is mounted a focusing lens 12 which is centered on the optical axis of the cavity.
- the solid laser 1 also usually comprises a rotary standard 109 (thin blade), which is positioned in the cavity 102, by being centered on the optical axis of this cavity, and which allows a first rough adjustment of the emission frequency of the solid laser 10, by an adjustment of the initial angular position of the standard 109.
- the generator 3 comprises two focusing lenses 31 and 32 between which is placed a non-linear crystal 30 based on crystals (PP: KTiOPO 4 ) allowing to obtain a quasi-phase agreement.
- this crystal PP: KTiOPO 4
- this crystal could be replaced by any known equivalent crystal fulfilling the same function, and for example by a crystal based on KNbO 3 .
- the use of a crystal 30 of the (PP: KTP) type advantageously makes it possible to obtain a higher second harmonic power compared for example to the use of a single crystal of the KNbO 3 type.
- Polarization means 6 and Absorption cell 7 ' Polarization means 6 and Absorption cell 7 ' ,
- the length L of the cavity was about 5mm.
- the length, width and height of the solid laser 10 were worth 50mm, 30mm and 30mm respectively.
- the laser beam 2 at the output of the solid laser 10 had a very good transverse quality, and was therefore easy to couple with an optical fiber.
- the parameter M 2 which defines the transverse quality of this beam was less than 1.1.
- the pump diode 1 1 produces a multi-pump beam mode 1 12a which is usually polarized and has an asymmetrical profile in the plane transverse to the direction of propagation of the beam. The asymmetry of this profile of the pump beam is not modified by the lens 1 12 '.
- the solid laser 10 delivers a laser beam 2 which is polarized, without it being necessary to implement in the laser cavity 101 a polarization element.
- the polarization of the laser beam 2 in the case of the variant of FIG. 2 can be explained by the combination of two effects:
- the invention is not limited to the two variant embodiments which have been described by way of examples with reference to FIGS. 1 and 2.
- any element or chemical compound having differentiated absorption lines can be used, and suitable for implementing a control according to the variant of Figure 1 or 2 (modulation of the atomic transition).
- the invention can more generally be applied to the production of a laser source stabilized around any predetermined wavelength ( ⁇ 1), which may be different from the value 1.56 ⁇ m, which is to date specific to the telecommunications field.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/481,177 US7233608B2 (en) | 2001-06-18 | 2002-06-18 | Frequency-stabilized laser source adapted for use as a frequency standard, in particular in the field of telecommunications |
DE60205745T DE60205745T2 (de) | 2001-06-18 | 2002-06-18 | Frequenzstabilisierte laserquelle |
EP02751264A EP1397851B1 (fr) | 2001-06-18 | 2002-06-18 | Source laser stabilisee en frequence |
AT02751264T ATE303011T1 (de) | 2001-06-18 | 2002-06-18 | Frequenzstabilisierte laserquelle |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0107974A FR2826191A1 (fr) | 2001-06-18 | 2001-06-18 | Source laser stabilisee en frequence et adaptee pour etre utilisee comme etalon de frequence en particulier dans le domaine des telecommunications |
FR0107974 | 2001-06-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002103861A1 true WO2002103861A1 (fr) | 2002-12-27 |
Family
ID=8864449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2002/002094 WO2002103861A1 (fr) | 2001-06-18 | 2002-06-18 | Source laser stabilisee en frequence |
Country Status (7)
Country | Link |
---|---|
US (1) | US7233608B2 (fr) |
EP (1) | EP1397851B1 (fr) |
AT (1) | ATE303011T1 (fr) |
DE (1) | DE60205745T2 (fr) |
ES (1) | ES2248582T3 (fr) |
FR (1) | FR2826191A1 (fr) |
WO (1) | WO2002103861A1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6944203B2 (en) * | 2002-05-08 | 2005-09-13 | Sumitomo Electric Industries, Ltd. | Multimode light generating module, semiconductor laser apparatus, and optical fiber amplifier |
US7366214B2 (en) * | 2004-09-14 | 2008-04-29 | B & W Property Inc. | Diode-pumped solid-state laser with self-maintained multi-dimensional optimization |
US7511880B2 (en) * | 2005-10-14 | 2009-03-31 | Konica Minolta Opto, Inc. | Semiconductor light source module |
US7664149B2 (en) * | 2006-05-08 | 2010-02-16 | Stc. Unm | Auto-stabilization of lasers by means of resonant structures |
JP5859793B2 (ja) * | 2011-09-28 | 2016-02-16 | 株式会社ミツトヨ | 光出力信号の安定化判定方法、及びレーザ周波数安定化装置 |
CN102801100B (zh) * | 2012-07-23 | 2014-07-30 | 江汉大学 | 提高激光器输出频率稳定度的装置及具有该装置的激光器 |
JP6934748B2 (ja) * | 2016-06-14 | 2021-09-15 | 株式会社ミツトヨ | レーザ装置及び周波数偏移量特定方法 |
FR3081738B1 (fr) * | 2018-06-05 | 2020-09-04 | Imagine Optic | Procedes et systemes pour la generation d'impulsions laser de forte puissance crete |
JP7376280B2 (ja) * | 2019-08-21 | 2023-11-08 | 株式会社ミツトヨ | レーザ装置及びレーザ安定化方法 |
CN113206435B (zh) * | 2021-04-14 | 2022-12-09 | 温州激光与光电子协同创新中心 | 一种基于混合原子气室的多波长激光产生装置 |
US12038465B2 (en) | 2022-03-11 | 2024-07-16 | The Mitre Corporation | Self-locked Rydberg atom electric field sensor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5063568A (en) * | 1988-09-05 | 1991-11-05 | Fujitsu Limited | Wavelength stabilized light source |
DE4132063A1 (de) * | 1991-09-26 | 1993-04-08 | Deutsche Aerospace | Vorrichtung zur kuehlung von festkoerperlasern, insb. mikrokristallasern |
US5553087A (en) * | 1993-04-24 | 1996-09-03 | Renishaw Plc | Frequency stabilized laser diode |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH451348A (de) * | 1967-02-08 | 1968-05-15 | Inst Angewandte Physik | Vorrichtung zur Frequenzstabilisierung eines Gaslaseroszillators |
US3471804A (en) * | 1967-05-09 | 1969-10-07 | Hughes Aircraft Co | Frequency stabilized laser |
US3584312A (en) * | 1969-10-20 | 1971-06-08 | Raytheon Co | Spikeless single-mode laser |
US3596201A (en) * | 1970-06-08 | 1971-07-27 | Hughes Aircraft Co | Frequency stabilized laser |
US3686585A (en) * | 1971-05-27 | 1972-08-22 | Ali Javan | Method of stabilizing a gas laser |
BE789352A (fr) * | 1971-09-27 | 1973-01-15 | Siemens Ag | Procede pour la stabilisation de la frequence d'un laser |
FR2270698B1 (fr) * | 1974-05-10 | 1980-03-28 | Anvar | |
US4025875A (en) * | 1976-01-05 | 1977-05-24 | Nasa | Length controlled stabilized mode-lock Nd:YAG laser |
US4592058A (en) * | 1984-08-10 | 1986-05-27 | The United States Of America As Represented By The Secretary Of The Army | Frequency stabilized laser |
US4893353A (en) * | 1985-12-20 | 1990-01-09 | Yokogawa Electric Corporation | Optical frequency synthesizer/sweeper |
GB2187592B (en) * | 1985-12-26 | 1989-10-18 | Yokogawa Electric Corp | Semiconductor laser wavelength stabilizer |
US5068864A (en) * | 1990-05-04 | 1991-11-26 | Laser Science, Inc. | Laser frequency stabilization |
US6351309B1 (en) * | 1991-08-06 | 2002-02-26 | Southwest Sciences Incorporated | Dual modulation laser line-locking technique for wavelength modulation spectroscopy |
US5969825A (en) * | 1991-08-06 | 1999-10-19 | Southwest Sciences Incorporated | Dual-modulation laser line-locking for wavelength modulation spectroscopy |
FR2751796B1 (fr) * | 1996-07-26 | 1998-08-28 | Commissariat Energie Atomique | Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale |
US5905748A (en) * | 1997-05-27 | 1999-05-18 | Uniphase Corporation | Single mode laser and method suitable for use in frequency multiplied |
US6654394B1 (en) * | 1999-07-01 | 2003-11-25 | The Research And Development Institute, Inc. | Laser frequency stabilizer using transient spectral hole burning |
JP2001036189A (ja) * | 1999-07-15 | 2001-02-09 | Topcon Corp | レーザー発振周波数安定化装置 |
-
2001
- 2001-06-18 FR FR0107974A patent/FR2826191A1/fr not_active Withdrawn
-
2002
- 2002-06-18 EP EP02751264A patent/EP1397851B1/fr not_active Expired - Lifetime
- 2002-06-18 WO PCT/FR2002/002094 patent/WO2002103861A1/fr not_active Application Discontinuation
- 2002-06-18 ES ES02751264T patent/ES2248582T3/es not_active Expired - Lifetime
- 2002-06-18 US US10/481,177 patent/US7233608B2/en not_active Expired - Fee Related
- 2002-06-18 AT AT02751264T patent/ATE303011T1/de not_active IP Right Cessation
- 2002-06-18 DE DE60205745T patent/DE60205745T2/de not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5063568A (en) * | 1988-09-05 | 1991-11-05 | Fujitsu Limited | Wavelength stabilized light source |
DE4132063A1 (de) * | 1991-09-26 | 1993-04-08 | Deutsche Aerospace | Vorrichtung zur kuehlung von festkoerperlasern, insb. mikrokristallasern |
US5553087A (en) * | 1993-04-24 | 1996-09-03 | Renishaw Plc | Frequency stabilized laser diode |
Non-Patent Citations (3)
Title |
---|
ITOH T ET AL: "Q-SWITCHING AND MODE SELECTION OF COUPLED-CAVITY ER, YB:GLASS LASERS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 36, no. 2B, 15 February 1997 (1997-02-15), pages L206 - L208, XP000733111, ISSN: 0021-4922 * |
SVELTO C ET AL: "Frequency stabilization of a novel 1.5- mu m Er-Yb bulk laser to a /sup 39/K sub-Doppler line at 770.1 nm", IEEE JOURNAL OF QUANTUM ELECTRONICS, APRIL 2001, IEEE, USA, vol. 37, no. 4, pages 505 - 510, XP002192397, ISSN: 0018-9197 * |
VERED MAHAL ET AL: "QUASI-PHASE-MATCHED FREQUENCY DOUBLING IN A WAVEGUIDE OF A 1560-NM DIODE LASER AND LOCKING TO THE RUBIDIUM D2 ABSORPTION LINES", OPTICS LETTERS, OPTICAL SOCIETY OF AMERICA, WASHINGTON, US, vol. 21, no. 16, 15 August 1996 (1996-08-15), pages 1217 - 1219, XP000623768, ISSN: 0146-9592 * |
Also Published As
Publication number | Publication date |
---|---|
US7233608B2 (en) | 2007-06-19 |
ATE303011T1 (de) | 2005-09-15 |
DE60205745T2 (de) | 2006-06-22 |
ES2248582T3 (es) | 2006-03-16 |
EP1397851B1 (fr) | 2005-08-24 |
US20040213304A1 (en) | 2004-10-28 |
DE60205745D1 (de) | 2005-09-29 |
FR2826191A1 (fr) | 2002-12-20 |
EP1397851A1 (fr) | 2004-03-17 |
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