WO2002084358A1 - Module d'emission destine a une transmission de signal optique - Google Patents

Module d'emission destine a une transmission de signal optique Download PDF

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Publication number
WO2002084358A1
WO2002084358A1 PCT/DE2001/001538 DE0101538W WO02084358A1 WO 2002084358 A1 WO2002084358 A1 WO 2002084358A1 DE 0101538 W DE0101538 W DE 0101538W WO 02084358 A1 WO02084358 A1 WO 02084358A1
Authority
WO
WIPO (PCT)
Prior art keywords
detection device
transmitting
module according
substrate
light
Prior art date
Application number
PCT/DE2001/001538
Other languages
German (de)
English (en)
Inventor
Jörg-Reinhardt KROPP
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to EP01933622A priority Critical patent/EP1379903A1/fr
Priority to CNB018231624A priority patent/CN1273848C/zh
Priority to PCT/DE2001/001538 priority patent/WO2002084358A1/fr
Priority to US10/475,131 priority patent/US6991381B2/en
Priority to DE10196351T priority patent/DE10196351D2/de
Publication of WO2002084358A1 publication Critical patent/WO2002084358A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Definitions

  • Designation of the invention transmitter module for optical signal transmission.
  • the invention relates to a transmitter module for an optical signal transmission according to the preamble of patent claim 1.
  • Transmitter modules for optical signal transmission are known in which a monitor diode is assigned to a laser diode, which detects part of the light emitted by the laser diode and is used to monitor the laser diode.
  • a monitor function in VCSEL (Vertical Cavity Surface Emitting Laser) laser diodes, in which the resonator sits vertically on the surface of a chip, to use reflective surfaces which throw part of the laser light onto a monitor diode.
  • the laser diode can also be positioned on the monitor diode itself.
  • bidirectional transmission / reception modules which simultaneously couple optical radiation into a waveguide for the bidirectional transmission of data and detect light power guided in the waveguide.
  • Beam splitters with wave-selective filters and lens coupling optics are used to decouple the transmitting device and the receiving device in such a transmitting / receiving module.
  • the known transmitter modules or transmitter / receiver modules for optical data communication have the disadvantage that they have a relatively complicated structure and require optical components such as reflecting surfaces, beam splitters or lenses.
  • the present invention has for its object to provide a transmitter module with a transmitter and a detection device to provide, which is simple and compact and allows an arrangement of transmitter and detection device that can do without additional optical components if possible.
  • the invention is characterized in that the substrate of the transmission device and / or the substrate of the detection device is transparent to the wavelength emitted by the transmission device and the transmission device and the detection device are superimposed with respect to the direction of the emitted light (optically in series ) are arranged.
  • the transmission device substrate and / or the detection device substrate is thus transparent to the light emitted by the transmission device.
  • the light emitted by the transmitter device can shine through the substrate of the transmitter device and / or the substrate of the photodiode, so that the transmitter device and detection device can be arranged one above the other or one below the other without the beam path of the transmitter module being interrupted by the respective substrate ,
  • an optical coupling of the transmitting device and the detection device is possible without the need for additional optical components such as reflecting surfaces, and new, compact optical arrangements can be implemented in a transmitting module.
  • a substrate is to be regarded as transparent for light of a certain wavelength in the sense of the invention if it does not completely absorb light of this wavelength. There is preferably only a low absorption of the transmitted light of less than 20 dB / mm.
  • the light emitted by the transmitting device radiates through the detection device before it is coupled into an optical waveguide, ie the latter is arranged between the transmitting device and an optical waveguide or a coupling optics.
  • the transmitter emits light in exactly one direction.
  • the detection device is designed such that it absorbs only a small part of the radiation and converts it into an electrical signal, for example a few percent of the light. The majority of the light emitted by the transmitting device, on the other hand, shines through the detection device substrate which is transparent in this embodiment.
  • This arrangement has the advantage that the light emitted by the transmitting device, which is used for data transmission, also radiates directly through the detection device, whereby monitoring of the transmitting device is achieved in a simple manner.
  • the transmitting device emits light in two opposite directions.
  • light emerges from the two sides of a VCSEL substrate.
  • the light emitted in one direction is coupled into an optical waveguide, while the light emitted in the other direction falls on the detection device.
  • the percentage of light that is coupled into the optical waveguide or that falls on the detection device can be adjusted by the degree of mirroring of the two mirrors of the laser diode.
  • either the light provided for detection or for coupling into an optical waveguide shines through the substrate of the transmission device. Due to the transparent properties of the substrate, the Connect the detection device or an optical fiber to be coupled directly to the transmission device or the substrate of the transmission device.
  • the transmission device - in particular in a chip-on-chip arrangement - is arranged directly on or under the detection device.
  • the optically active area of the transmitting device can lie on the upper side or on the lower side of the transmitting device substrate and can optionally be arranged directly opposite the optically active area of the detection device.
  • Any gap that may be present between the transmitting device and the detection device is preferably filled by an optically transparent potting compound. This has the advantage that the area of the optical path between the transmitting device and the detection device is encapsulated and protected against dirt and environmental influences.
  • the transmitter and the detection device are contacted such that an electrical connection of the transmitter and an electrical connection of the detection device are interconnected, so that only one bond wire is required for these two connections.
  • the arrangement of the transmission device and detection device is mounted directly above an optical waveguide.
  • the optical waveguide is guided up to the surface of the transmitter device substrate or the detection device substrate and is fixed with respect thereto.
  • the arrangement of the transmitting device and the detection device will be mounted, for example, directly on the end face of a ceramic pin, which receives the optical waveguide in the center.
  • the end face can be metallized in order to be able to provide contacting of the transmitting device and / or the receiving device at the same time.
  • the transmitting device is mounted with its optically active region downwards directly above the optical waveguide.
  • the detection device is arranged on the side of the transmission device facing away from the optical waveguide.
  • the transmitter emits light in two opposite directions.
  • the transmitter is located on the side of the detection device facing away from the optical waveguide, the transmitter in this embodiment emitting light only in one direction.
  • the arrangement of the transmission device and monitor device is preferably mounted on a leadframe.
  • the leadframe has a recess to allow optical coupling with an optical waveguide.
  • the arrangement of the transmitting device and detection device on a leadframe is particularly advantageous since the mounting of chips on a leadframe is a standard technique and is easy to implement in terms of production technology. The known manufacturing and assembly methods can be used.
  • light-shaping elements in particular one, are incorporated in the transmission device substrate and / or the monitor device substrate Integrated lens, for example in the form of a micro-dome or in the form of a Fresnel lens. This simplifies the coupling of light into an optical waveguide assigned to the transmission device.
  • the transmission device comprises a VCSEL laser diode which emits light in the vertical direction with respect to the surface of the transmission device substrate. Due to the transparent design of the transmission device substrate, light can also be emitted in the opposite direction, which is also vertical with respect to the substrate surface. Both mirrors of the laser resonator are designed as partially transparent mirrors. The degrees of reflection are, for example, 99.91% for one mirror and 99.95% for the other mirror.
  • the detection unit preferably comprises a photodiode.
  • Detection device part of the light emitted by the transmitter device and thus serves as a monitor device for monitoring the transmitter device.
  • the detection device detects light of a wavelength different from that
  • the transmitting device preferably emits light of a wavelength which is above 950 nm and preferably at the wavelengths is 1300 nm or 1500 nm, which are particularly interesting for optical data transmission. However, it can also be provided that the transmitter device emits light of a wavelength below 950 nm, in particular of 850 nm.
  • GaAs which is transparent for wavelengths above 950 nm, is used as the substrate which is transparent to the light of the transmitting device.
  • other materials can also be used for the substrate of the transmission device or the detection device, in particular also
  • Silicon or a sapphire substrate Methods are used in which a laser diode or a monitor diode is produced on a first substrate and then transferred to another substrate such as silicon. Such methods are known per se.
  • FIG. 1 shows a first exemplary embodiment of a transmitter module according to the invention, in which a laser diode is arranged above a photodiode;
  • FIG. 2 - a second exemplary embodiment of a transmitter module according to the invention, in which a laser diode is arranged above a photodiode;
  • FIG. 3 - a third exemplary embodiment of a transmitter module according to the invention, in which a
  • Laser diode is arranged over a photodiode
  • Figure 4 an alternative embodiment of the embodiment of Figure 3, in which a lens is additionally integrated in the substrate of the laser diode;
  • FIG. 5 - a fourth exemplary embodiment of a he transmitter module according to the invention, in which a sandwich arrangement of a laser diode and a photodiode is arranged directly above a waveguide;
  • FIG. 6 - a fifth embodiment of a transmitter module according to the invention, in which a sandwich arrangement of a laser diode and a photodiode is arranged directly above a waveguide;
  • FIG. 7 - a sixth embodiment of a transmitter module according to the invention, in which a sandwich arrangement of a laser diode and a photodiode is arranged directly above a waveguide;
  • FIG 8 - a seventh embodiment of a transmitter module according to the invention, in which a sandwich arrangement of a laser diode and a
  • Photodiode is mounted on a leadframe having an opening and
  • FIG. 1 shows a transmitter module according to the invention with a transmitter device 1 and a detection device 2, which are arranged on a lead frame or a printed circuit board 6.
  • the transmitting device is preferably a VCSEL laser diode 1, the VCSEL structure of which is applied epitaxially in the vertical direction to a chip or a substrate 3.
  • the VCSEL structure is produced on another substrate, removed from this substrate and then mounted on the substrate 3.
  • the detection device is a
  • Photodiode 2 which is placed on a substrate 4 or integrated into this. It serves in the illustrated
  • Embodiment as a monitor diode and for this purpose is connected to a control device (not shown) for regulating the output power of the laser diode 1.
  • the substrate 3 on which the VCSEL laser diode 1 is arranged is transparent to the light wavelength which the laser diode 1 emits. Therefore, it is possible that from both sides of the vertically arranged on the substrate 3
  • Resonator of the VCSEL laser diode 1 is also emitted light in both directions, wherein the light emerging from the resonator downwards first shines through the substrate 3 and then emerges from the substrate 3.
  • the percentage with which the laser diode 1 emits light upwards and the percentage with which the laser diode 1 emits light downwards is set by the degree of mirroring of the lower and upper mirror of the resonator of the laser diode 1.
  • the photodiode 2 is mounted with the optically active area up (up side up) on the carrier substrate 4, which is arranged on the circuit board 6.
  • the substrate 3 with the laser diode 1 is mounted directly on the photodiode 2, in the exemplary embodiment shown by means of an optically transparent adhesive. Due to the transparency of the substrate 3, the light emitted downwards by the laser diode 1 is radiated directly onto the photodiode 2.
  • the electrical contacting of the laser diode 1 takes place in the illustrated embodiment from the top two bond wires 51, 52, which lead to contact pads 7 on the printed circuit board 7.
  • the photodiode 2 is contacted from the top by a bonding wire 53 and from the bottom by soldering or gluing with a conductive adhesive (not shown).
  • the light emitted upwards by the laser diode 1 can be coupled into an optical waveguide (not shown) directly or via additional optics.
  • the laser diode 1 preferably emits light of a wavelength above 950 nm, in particular light of a wavelength of 1300 or 1500 nm.
  • the substrate 3 of the laser diode 1 consists, for example, of GaAs, which is transparent to light with wavelengths above 950 nm.
  • the substrate 3 is, for example, a silicon or sapphire substrate. Silicon is transparent for wavelengths above approximately 1100 nm. Sapphire is also transparent for wavelengths below 950 nm, especially for wavelengths of 850 nm.
  • the VCSEL laser 1 then emits light of a wavelength of 850 nm, for example, and is first manufactured on another substrate and then separated from it and transferred to the sapphire substrate. Such a transfer of the laser diode 1 to a new substrate enables substrates 3 with the desired optical properties to be used.
  • the exemplary embodiment of FIG. 2 differs from the exemplary embodiment of FIG. 1 on the one hand in that the VCSEL laser diode 1 is applied to the photodiode 2 not via an adhesive but via solder bumps 81, 82. Instead of using solder bumps 81, 82, contact can also be made, for example, via a conductive adhesive or other selective electrical connections between the photodiode chip and the substrate 3.
  • the optically sensitive area of the photodiode 2 is left free for radiation to pass through.
  • the resulting gap between the photodiode 2 and the substrate 3 is preferably filled with an optically transparent potting compound.
  • the second electrical contact of the laser diode 1 is on the back of the substrate 3, a contact of the laser diode 1 and a contact of the monitor diode 2 being connected together and contacted via a bond wire 52.
  • the laser diode 1 is mounted on the photodiode 2 or the photodiode substrate 4 with the optically active region downwards (up side down) by means of solder bumps 81, 82.
  • the light component of the laser diode 1 emitted by the substrate 3 is thus used for data transmission, whereas the directly emitted light falls on the photodiode 2 arranged directly below it.
  • the electrical contacting of the laser diode 1 of the arrangement takes place via two bonding wires 51, 52, one of the connections being interconnected as in FIG. 2 with a connection of the photodiode 2.
  • a micro-dome is integrated into the substrate 3 as a lens 31 on the side of the substrate 3 facing away from the active VCSEL region.
  • the light to be coupled into an optical waveguide is focused.
  • FIG. 5 shows a further exemplary embodiment of the invention, in which a sandwich arrangement of laser diode 1 and photodiode 2 (corresponding to the arrangement in FIG. 2) is mounted directly above a waveguide 10.
  • the waveguide 10 is located in a fine bore 12 of a ferrule 11.
  • the waveguide runs in a substrate, in particular a ceramic substrate, and is guided up to one surface of the substrate and fixed there.
  • the arrangement of laser diode 1 and photodiode 2 is attached directly to the end face of the ferrule 11.
  • the photodiode substrate 4 is glued directly onto the end face of the ferrule.
  • the photodiode 2 and the laser diode 1 each have their two electrical contacts on the top and are contacted by bond wires 51, 52, 53, 54, which lead to contact pads 7 on a printed circuit board 6.
  • Printed circuit board 6 has a recess in the area of ferrule 11.
  • a holder 14 serves as a holder for the ferrule 11 and / or as a carrier for the printed circuit board 6.
  • the laser diode substrate 3 On the side facing away from the laser diode 1, the laser diode substrate 3 has a lens 31 in the form of a micro-dome as a radiation-shaping element, which causes the light emitted by the laser diode to be coupled into the waveguide 10 with a high degree of coupling.
  • the light generated by the laser diode 1 shines on the one hand through the laser diode substrate 3 and on the other hand through the photodiode 2 and the photodiode substrate 4.
  • the light is coupled through the photodiode substrate 4 into the optical waveguide 10, which is arranged directly under the photodiode chip 4.
  • the photodiode 2 detects the same wavelength that the laser diode 1 emits, it is used as a monitor diode for the emitted light. However, it is also possible to design the photodiode 2 in such a way that it is not sensitive to the wavelength of the laser diode 1, but to another wavelength that is above or below the laser wavelength. The detection device or photodiode 2 can then as
  • Detection unit of a bidirectional transmission / reception module can be used, which consists of the optical waveguide 10 Coupled-out light of a second wavelength is detected, while the laser diode 1 couples light of a first wavelength into the optical waveguide 10.
  • a compact arrangement for the bidirectional transmission of data on a waveguide 10 with two different wavelengths is provided.
  • further wavelengths can be used for bidirectional data transmission.
  • a focusing lens 41 is not formed in the laser diode substrate 3 but in the substrate 4 of the photodiode 2. Furthermore, in comparison to the arrangement in FIG. 5 1, the photodiode is attached with the optically active region down (up side down) on the end face of the ferrule 11. The end face of the ferrule 11 is metallized and the electrical contacting of the photodiode 2 takes place via solder bumps 81, 82 which are arranged on the end face of the ferrule 11. Otherwise, the arrangement corresponds to the arrangement in FIG. 5.
  • the light emitted downwards is directly coupled into the waveguide 10.
  • the light emitted upwards passes through the substrates 3, 4, which are optically transparent for the laser light, for the laser diode 1 and the photodiode 2.
  • the electrical contacting takes place analogously to the electronic contacting in the exemplary embodiment in FIG. 6.
  • Substrate 4 with the photodiode 2 is preferably mounted on the back of the substrate 3 of the laser diode 1 by means of an optically transparent adhesive.
  • the laser chip 3 is turned over so that the laser diode 1 is arranged on the upper side of the substrate 3.
  • the laser chip is then also contacted from the top using two bonding wires which are guided from the printed circuit board 6 or a lead frame corresponding to FIG. 5 to the top of the laser diode 1.
  • this has the advantage that the laser diode 1 can already be operated during the assembly of the arrangement on the substrate 11 and can thus be actively adjusted during assembly.
  • passive alignment structures in the laser diode substrate or in the photodiode substrate and in the substrate 11 guiding the optical waveguide 10 are required for adjusting the laser diode and photodiode.
  • an optically transparent casting compound to be provided in the region of the light-shaping elements 31, 41 and / or between the optical waveguide 10 and the adjacent substrate 3, 4.
  • an optically transparent casting compound it can be provided in the exemplary embodiment in FIG. 5 that the area between the lens 31 and the photodiode 2 be filled with a casting compound.
  • the optical path is protected against dirt and environmental influences by an optically transparent potting compound. A reduction in the refractive power of the lenses 31, 41 associated with the potting can be accepted.
  • the photodiode is as in relation to the alternative of FIG. 7 just explained described, arranged up side up.
  • the sandwich arrangement of laser diode 1 and photodiode 2 is mounted on a lead frame 13.
  • the leadframe 13 has an opening 13 ′ which permits optical coupling between the laser diode 1 and the optical waveguide 10. That the
  • Optical waveguide 10-carrying substrate 11 (ferrule 11) is brought up directly to the underside of lead frame 13.
  • bond wires 51, 52 and on the other hand solder pads 81, 82 are used to contact the photodiode 2 and the laser diode 1.
  • Active adjustment via the waveguide 10 is also easily possible in this variant of the invention.
  • a lens 31 is integrated in the laser diode substrate 3 in order to enable improved coupling of laser light into the optical waveguide 10.
  • the exemplary embodiment in FIG. 9 essentially corresponds to the exemplary embodiment in FIG. 8, the laser diode corresponding to the exemplary embodiment in FIG. 6 being mounted on the photodiode and the latter on the leadframe 13.
  • the laser diode is contacted via bond wires 51, 52, and the photodiode 2 is contacted via solder bumps 81, 82, which are placed on current or signal-carrying contact pads of the leadframe 13.
  • a transmission device substrate and / or a detection device substrate is at least partially transparent to the wavelength emitted by the transmission device and the transmission device and the detection device are arranged one above the other or one below the other in relation to the direction of the emitted light ,

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un module d'émission destiné à une transmission de signal optique, composé d'une unité d'émission (1) émettant de la lumière d'une certaine longueur d'onde, d'un substrat d'unité d'émission (3) recevant l'unité d'émission, d'une unité de détection (2) détectant de la lumière d'une certaine longueur d'onde, et d'un substrat d'unité de détection (4) recevant l'unité de détection. Selon l'invention, le substrat d'unité d'émission (3) et/ou le substrat d'unité de détection (4) sont transparents à la longueur d'onde émise par l'unité d'émission (1), et l'unité d'émission (1) et l'unité de détection (2) sont superposées dans le sens de la lumière émise. Le module selon l'invention permet un couplage optique de l'unité d'émission (1) et de l'unité de détection (2) s'affranchissant de composants optiques supplémentaires tels que des surfaces réfléchissantes. Ainsi, il est possible de mettre en oeuvre de nouveaux systèmes optiques compacts dans un module d'émission.
PCT/DE2001/001538 2001-04-18 2001-04-18 Module d'emission destine a une transmission de signal optique WO2002084358A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP01933622A EP1379903A1 (fr) 2001-04-18 2001-04-18 Module d'emission destine a une transmission de signal optique
CNB018231624A CN1273848C (zh) 2001-04-18 2001-04-18 光信号传输之发射模块
PCT/DE2001/001538 WO2002084358A1 (fr) 2001-04-18 2001-04-18 Module d'emission destine a une transmission de signal optique
US10/475,131 US6991381B2 (en) 2001-04-18 2001-04-18 Emission module for an optical signal transmission
DE10196351T DE10196351D2 (de) 2001-04-18 2001-04-18 Sendemodul für eine optische Signalübertragung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2001/001538 WO2002084358A1 (fr) 2001-04-18 2001-04-18 Module d'emission destine a une transmission de signal optique

Publications (1)

Publication Number Publication Date
WO2002084358A1 true WO2002084358A1 (fr) 2002-10-24

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PCT/DE2001/001538 WO2002084358A1 (fr) 2001-04-18 2001-04-18 Module d'emission destine a une transmission de signal optique

Country Status (5)

Country Link
US (1) US6991381B2 (fr)
EP (1) EP1379903A1 (fr)
CN (1) CN1273848C (fr)
DE (1) DE10196351D2 (fr)
WO (1) WO2002084358A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10348675B3 (de) * 2003-10-15 2005-06-09 Infineon Technologies Ag Modul für eine bidirektionale optische Signalübertragung
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US7418208B2 (en) 2003-10-15 2008-08-26 Finisar Corporation Optoelectronic transceiver for a bidirectional optical signal transmission
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EP3796575A1 (fr) * 2019-09-17 2021-03-24 Infineon Technologies AG Optocoupleur comportant une source de rayonnement électromagnétique à émission latérale

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US6991381B2 (en) 2006-01-31
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CN1524192A (zh) 2004-08-25
US20040136658A1 (en) 2004-07-15
DE10196351D2 (de) 2004-04-15

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