WO2002075021A1 - Procede de revetement par plasma et dispositif de mise en oeuvre dudit procede - Google Patents

Procede de revetement par plasma et dispositif de mise en oeuvre dudit procede Download PDF

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Publication number
WO2002075021A1
WO2002075021A1 PCT/EP2002/002939 EP0202939W WO02075021A1 WO 2002075021 A1 WO2002075021 A1 WO 2002075021A1 EP 0202939 W EP0202939 W EP 0202939W WO 02075021 A1 WO02075021 A1 WO 02075021A1
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
substrate
flow
coating
plasma
Prior art date
Application number
PCT/EP2002/002939
Other languages
German (de)
English (en)
Inventor
Frank Breme
Johannes Buttstädt
Original Assignee
Gfe Metalle Und Materialien Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2001113030 external-priority patent/DE10113030A1/de
Application filed by Gfe Metalle Und Materialien Gmbh filed Critical Gfe Metalle Und Materialien Gmbh
Publication of WO2002075021A1 publication Critical patent/WO2002075021A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L27/00—Materials for grafts or prostheses or for coating grafts or prostheses
    • A61L27/28—Materials for coating prostheses
    • A61L27/30—Inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges

Abstract

L'invention concerne un procédé de revêtement par plasma, notamment un procédé de dépôt par plasma. L'invention vise à recouvrir le substrat avec un générateur de couche faisant partie de l'atmosphère du gaz de traitement, sous forme de substance précurseuse contenant le générateur de couche. A cet effet, il est prévu d'effectuer au moins une fois une opération de revêtement au cours de laquelle un plasma est allumé au moins une fois, ce qui permet d'obtenir un revêtement du substrat avec le générateur de couche. Selon l'invention, il est prévu d'effectuer au moins une première et au moins une deuxième opération de revêtement. A cette fin, le substrat est submergé de gaz de traitement pendant les premières opérations de revêtement dans un premier sens de submersion et, pendant les deuxièmes opérations de revêtement, dans un second sens de submersion, opposé au premier.
PCT/EP2002/002939 2001-03-17 2002-03-16 Procede de revetement par plasma et dispositif de mise en oeuvre dudit procede WO2002075021A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10113030.9 2001-03-17
DE2001113030 DE10113030A1 (de) 1999-09-22 2001-03-17 Plasmabeschichtungsverfahren und Vorrichtung zur Durchführung des Verfahrens

Publications (1)

Publication Number Publication Date
WO2002075021A1 true WO2002075021A1 (fr) 2002-09-26

Family

ID=7677924

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/002939 WO2002075021A1 (fr) 2001-03-17 2002-03-16 Procede de revetement par plasma et dispositif de mise en oeuvre dudit procede

Country Status (1)

Country Link
WO (1) WO2002075021A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006096641A1 (fr) * 2005-03-07 2006-09-14 Sub-One Technology, Inc. Procede et systeme permettant de revetir des surfaces internes a l'aide d'une technique de variations cycliques a contre-courant et d'autres techniques

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1524507A (fr) * 1966-05-11 1968-05-10 Ass Elect Ind Traitement des lamelles semi-conductrices par passage d'un agent gazeux
US3658585A (en) * 1969-03-18 1972-04-25 Siemens Ag Method of precipitating layers of semiconducting or insulating material from a flowing reaction gas or from a flowing dopant gas upon heated semiconductor crystals
WO1996000314A2 (fr) * 1994-06-24 1996-01-04 Aixtron Gmbh Reacteur et procede permettant de recouvrir des substrats plans
US5517943A (en) * 1993-12-16 1996-05-21 Mitsubishi Denki Kabushiki Kaisha Vacuum CVD apparatus
JPH10199871A (ja) * 1997-01-10 1998-07-31 Sony Corp Ｃｖｄ膜の成膜方法
EP0906966A2 (fr) * 1997-10-04 1999-04-07 Verschleiss- Schutz-Technik Dr. Ing. Klaus Keller Procédé et système de réacteur pour revêtir des surface par CVD
US6013319A (en) * 1998-04-28 2000-01-11 Dietze; Gerald R. Method and apparatus for increasing deposition quality of a chemical vapor deposition system
EP1094128A1 (fr) * 1999-10-22 2001-04-25 INPRO Innovationsgesellschaft für fortgeschrittene Produktionssysteme in der Fahrzeugindustrie mbH Procédé pour revêtement de l'intérieur de corps creux

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1524507A (fr) * 1966-05-11 1968-05-10 Ass Elect Ind Traitement des lamelles semi-conductrices par passage d'un agent gazeux
US3658585A (en) * 1969-03-18 1972-04-25 Siemens Ag Method of precipitating layers of semiconducting or insulating material from a flowing reaction gas or from a flowing dopant gas upon heated semiconductor crystals
US5517943A (en) * 1993-12-16 1996-05-21 Mitsubishi Denki Kabushiki Kaisha Vacuum CVD apparatus
WO1996000314A2 (fr) * 1994-06-24 1996-01-04 Aixtron Gmbh Reacteur et procede permettant de recouvrir des substrats plans
JPH10199871A (ja) * 1997-01-10 1998-07-31 Sony Corp Ｃｖｄ膜の成膜方法
EP0906966A2 (fr) * 1997-10-04 1999-04-07 Verschleiss- Schutz-Technik Dr. Ing. Klaus Keller Procédé et système de réacteur pour revêtir des surface par CVD
US6013319A (en) * 1998-04-28 2000-01-11 Dietze; Gerald R. Method and apparatus for increasing deposition quality of a chemical vapor deposition system
EP1094128A1 (fr) * 1999-10-22 2001-04-25 INPRO Innovationsgesellschaft für fortgeschrittene Produktionssysteme in der Fahrzeugindustrie mbH Procédé pour revêtement de l'intérieur de corps creux

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 12 31 October 1998 (1998-10-31) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006096641A1 (fr) * 2005-03-07 2006-09-14 Sub-One Technology, Inc. Procede et systeme permettant de revetir des surfaces internes a l'aide d'une technique de variations cycliques a contre-courant et d'autres techniques
US7541069B2 (en) 2005-03-07 2009-06-02 Sub-One Technology, Inc. Method and system for coating internal surfaces using reverse-flow cycling

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