WO2002069388A1 - Appareil electrique et procede de fabrication de cet appareil electrique - Google Patents

Appareil electrique et procede de fabrication de cet appareil electrique Download PDF

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Publication number
WO2002069388A1
WO2002069388A1 PCT/JP2002/001524 JP0201524W WO02069388A1 WO 2002069388 A1 WO2002069388 A1 WO 2002069388A1 JP 0201524 W JP0201524 W JP 0201524W WO 02069388 A1 WO02069388 A1 WO 02069388A1
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WIPO (PCT)
Prior art keywords
electrode
electrodes
conductive particles
electric device
semiconductor chip
Prior art date
Application number
PCT/JP2002/001524
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English (en)
Japanese (ja)
Inventor
Hiroyuki Kumakura
Original Assignee
Sony Chemicals Corp.
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Filing date
Publication date
Application filed by Sony Chemicals Corp. filed Critical Sony Chemicals Corp.
Publication of WO2002069388A1 publication Critical patent/WO2002069388A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L2924/01045—Rhodium [Rh]
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    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads

Definitions

  • the present invention relates to an adhesive, and particularly to an adhesive for connecting a semiconductor chip to a substrate.
  • Reference numeral 101 in FIG. 11 denotes a semiconductor chip 106. Indicates an electrical device attached to the substrate 105 with an adhesive 113.
  • the bump-shaped electrode 122 included in the semiconductor chip 106 is arranged to face the electrode 122 formed of a part of the wiring pattern on the substrate 105.
  • Conductive particles 1 19 are dispersed in the adhesive 1 13, and the electrodes 1 121 and 122 facing each other sandwich the conductive particles 1 19.
  • Reference numeral 150 in FIG. 11 indicates a portion where the conductive particles 1 19 are sandwiched between the electrodes 121 and 122, and FIG. 12 indicates reference numeral 150 in FIG. It is an enlarged view of a part.
  • the conductive particles 119 consist of metal-coated particles in which a metal film is formed on the surface of resin particles, and such conductive particles 119 are electrodes 121, 122 made of metal.
  • Fig. 1 The conductive particles 119 consist of metal-coated particles in which a metal film is formed on the surface of resin particles, and such conductive particles 119 are electrodes 121, 122 made of metal.
  • the contact area between the electrodes 12 1 and 12 2 and the conductive particles 1 19 increases, so that the electrodes 1 2 1 and 1 2 2
  • the connection reliability of the semiconductor chip 106 is improved, and the wiring of the substrate 105 and the internal circuit of the semiconductor chip 106 are electrically connected via the electrodes 121 and 122.
  • the thermosetting resin in the adhesive 113 has been cured, and the semiconductor chip 106 and the substrate 105 are also mechanically connected via the adhesive 113.
  • the electric device 101 is required to have flexibility and impact resistance, but the electric device 101 is heated or bent. If a physical shock such as is applied, poor conduction may occur.
  • the present invention has been made to solve the above-mentioned disadvantages of the related art, and an object of the present invention is to provide a highly reliable electric device. Disclosure of the invention
  • the electrical connection between the substrate and the semiconductor chip is made by bringing the electrode of the substrate (first electrode) and the electrode of the semiconductor chip (second electrode) into contact with the conductive particles, respectively.
  • first electrode the electrode of the substrate
  • second electrode the electrode of the semiconductor chip
  • the inventors of the present invention use conductive particles having a higher elastic modulus than the first and second electrodes, and further apply a load applied to the electrodes during connection. By increasing the size, a method was found in which the conductive particles penetrated both the first and second electrodes, making it difficult for the conductive particles to separate from the first and second electrodes.
  • the present invention has been created based on the above findings, and the present invention provides a first electrode, a second electrode opposed to the first electrode, and an adhesive in which conductive particles are dispersed.
  • An electrical device comprising: the first and second electrodes fixed by the adhesive in a state where the conductive particles are sandwiched between the first and second electrodes.
  • the modulus of elasticity of the first electrode and the modulus of elasticity of the second electrode are each smaller than the modulus of elasticity of the conductive particles.
  • An electrical device in which conductive particles penetrate both surfaces of the first and second electrodes.
  • the present invention is an electric device, wherein the first and second electrodes are in contact with each other.
  • the present invention is the electrical device, wherein the average particle size of the conductive particles is 0.5 m or more and 10 m or less.
  • the present invention is an electric device including a substrate and a semiconductor chip, wherein the first electrode is arranged on the surface of the substrate, and the second electrode is arranged on the surface of the semiconductor chip.
  • an adhesive in which conductive particles are dispersed is disposed between first and second electrodes having an elastic modulus lower than that of the conductive particles, and one adhesive per second electrode is provided.
  • the adhesive is sandwiched between the first electrode and the second electrode so that a load of 0 N or more is applied, and the first and second electrodes are sandwiched between the conductive particles.
  • a load of 3.3 N or more per one second electrode is applied.
  • the present invention is configured as described above, and the elastic modulus of the conductive particles is higher than the elastic moduli of the first and second electrodes.
  • the friction between the conductive particles and the first and second electrodes is increased by the conductive particles penetrating into both the first and second electrodes, and the electric conductivity is reduced.
  • the conductive particles are hard to separate from the first and second electrodes. That is, the conduction reliability of the electric device of the present invention is enhanced.
  • the deformation (strain ⁇ ) generated in the first and second electrodes increases.
  • the reliability of the electric device is increased because the conductive particles penetrate deeper.
  • FIG. 1 (a) is a cross-sectional view for explaining the manufacturing process (1) of the electric device of the first example of the present invention.
  • FIG. 1 (b) is a cross-sectional view for explaining the manufacturing process (2) of the electric device according to the first example of the present invention.
  • FIG. 1 (c) is a cross-sectional view for explaining the manufacturing process (3) of the electric device according to the first example of the present invention.
  • FIG. 1 (d) is a cross-sectional view for explaining the manufacturing process (4) of the electric device according to the first example of the present invention.
  • FIG. 2 (a) is a cross-sectional view for explaining the manufacturing process (1) of the electric device according to the second example of the present invention.
  • FIG. 2 (b) is a cross-sectional view for explaining the manufacturing process (2) of the electric device according to the second example of the present invention.
  • FIG. 2 (C) is a cross-sectional view for explaining the manufacturing process (3) of the electric device according to the second example of the present invention.
  • FIG. 3 is an electron micrograph showing an example of a connection state of the first and second electrodes of the electric device of the present invention.
  • FIG. 4 is an electron micrograph showing a first example of a connection state of first and second electrodes of a conventional electric device.
  • FIG. 5 is an electron micrograph showing a second example of the connection state of the first and second electrodes of the conventional electric device.
  • FIG. 6 is an electron micrograph showing a third example of the connection state of the first and second electrodes of the conventional electric device.
  • FIG. 7 is a simplified view of the electron micrograph shown in FIG.
  • FIG. 8 is a simplified view of the electron micrograph shown in FIG.
  • FIG. 9 is a simplified diagram of the electron micrograph shown in FIG.
  • FIG. 10 is a simplified view of the electron micrograph shown in FIG.
  • FIG. 11 is a diagram for explaining a conventional method for manufacturing an electric device.
  • FIG. 12 is an enlarged cross-sectional view illustrating a portion of a conventional electric device in which conductive particles are sandwiched between electrodes.
  • reference numerals 1 and 2 indicate electric devices, respectively.
  • Reference numeral 5 indicates a substrate (flexible wiring board).
  • Reference numeral 6 indicates a semiconductor chip.
  • Symbols 13 and 14 indicate adhesives, respectively.
  • Reference numeral 19 denotes a conductive particle.
  • Reference numeral 21 denotes a first electrode.
  • Reference numeral 22 denotes a second electrode.
  • Reference numeral 5 in FIG. 1 (a) indicates a flexible wiring board.
  • Metal wiring is arranged on the surface of the flexible wiring board 5, and a plurality of electrodes 21 (first electrodes) are formed from a part of the metal wiring.
  • the first electrodes 21 are arranged at positions corresponding to the second electrodes of the semiconductor chip described later.
  • the first electrodes 21 are respectively exposed on the surface of the flexible wiring board 5.
  • the flexible wiring board 5 is placed on a mounting table (not shown), and the adhesive 13 is applied in a predetermined amount so as to cover the first electrode 21.
  • Reference numeral 19 in FIG. 1 (b) indicates conductive particles dispersed in the adhesive 13.
  • Reference numeral 6 in FIG. 1 (c) denotes a semiconductor chip.
  • a plurality of protruding electrodes (second electrodes) 22 are arranged on one surface of the semiconductor chip 6, and the second electrodes 22 are respectively connected to internal circuits (not shown) of the semiconductor chip 6. It is connected.
  • the surface on which the second electrode 22 of the semiconductor chip 6 is disposed is directed toward the surface of the adhesive 13 on the flexible wiring board 5, and the second electrode 22 and the first electrode 22 are disposed.
  • the semiconductor chip 6 is pressed against the surface of the adhesive 13 so that a load of 1.ON or more is applied to each of the second electrodes 22.
  • the excess adhesive 13 is pushed out by pressing, leaving an appropriate amount of the adhesive 13 between the semiconductor chip 6 and the flexible wiring board 5 and the conductive particles 1 in the adhesive 13. 9 is sandwiched between the first and second electrodes 2 1 2 2. If the pressing is continued in this state, the conductive particles 19 bite into both the first and second electrodes 21 and 22, and the first and second electrodes 21 and 22 come into contact with each other.
  • the adhesive of the present invention Film-shaped ones that have been semi-cured to the extent that they exhibit self-supporting properties, and those that have been made into a film by adding a solid resin are also included.
  • Reference numeral 15 in FIG. 2A indicates a film-like adhesive according to an example of the present invention.
  • this adhesive 15 is first adhered to the surface of the flexible wiring board 5 on the side where the first electrode 21 is disposed, and the semiconductor chip 6 and the flexible After aligning with the wiring board 5, the semiconductor chip 6 is heated while being pressed against the surface of the adhesive 15 on which the second electrode 22 is arranged. Eventually, the excess adhesive 15 is displaced, and an appropriate amount of the adhesive 15 remains between the semiconductor chip 6 and the flexible wiring board 5 and the conductive particles 1 in the adhesive 15 9 is sandwiched between the first and second electrodes 21 and 22, and the first and second electrodes 21 and 22 come into contact with each other in a state where the conductive particles 19 bite. At this time, the adhesive 15 is hardened by heating, so that the flexible wiring board 5 and the semiconductor chip 6 are also mechanically connected, and the electric device 2 of the present invention is obtained.
  • Bisphenol A type epoxy resin a thermosetting resin (trade name “EP8228” manufactured by Yuka Shell Epoxy Co., Ltd.) Epoxy Co., Ltd. product name “HX3941 HP”) 55 parts by weight and a capping agent as an additive (trade name “A—187” manufactured by Nippon Tunicer Co., Ltd.) )) And 1 part by weight to prepare a resin component that can be polymerized by heat.
  • conductive particles 19 shown in the column of “conductive particles (C)” in Table 1 below were added and dispersed by 10 parts by weight, respectively, to obtain 6 types.
  • a paste adhesive was prepared.
  • the average particle size of the conductive particles 19 was not less than 05 / xm and not more than 10 as shown in the following table.
  • PET polyethylene terephthalate film
  • metal wiring made of copper or aluminum (thickness: 25 m)
  • Two types of flexible wiring boards 5 having the above-mentioned are manufactured. A part of the metal wiring of the flexible wiring board 5 was used as the first electrode 21.
  • the planar shape of the semiconductor chip 6 was a square of 4 mm square, and the thickness was 0.3 mm.
  • Three second electrodes 22 made of gold or nickel are formed on the surface of each semiconductor chip 6 by electrolytic plating. Two types of semiconductor chips having different types of second electrodes 22 were produced.
  • the plane shape of each second electrode 2 2 is: I 0 0 m square
  • the heating conditions at the time of connection were 210 ° C. for 5 seconds.
  • the load applied during connection is 9.8 N or 3.ON per contact with the semiconductor chip 6 —that is, about 3.3 N or 1.ON per second electrode 22 — When converted to the area per mm 2 of the second electrode 22, it was about 330 N or 10 ON.
  • the electrical resistance of each of the electrical devices 1 of Examples 1 to 7 and Comparative Examples 1 to 4 was measured, and then stored for 15 hours at 121 ° C and 100% RH (high-temperature high-humidity storage). Then, the conduction resistance of each electric device 1 was measured again.
  • the conduction resistance was measured, and then a 9.8 N impact was applied to the periphery of the semiconductor chip 6 of each of the electrical devices 1 to reduce the conduction resistance again. It was measured. Separately from this, for each of the electric devices 1 after the high-temperature and high-humidity storage in the “conductivity test”, a shock was applied in the above-described process after measuring the conduction resistance, and the conduction resistance was measured again.
  • connection states of the first and second electrodes 21 and 22 were observed using an electron microscope.
  • " ⁇ " is used, and the opposing surfaces of the first and second electrodes 21 and 22 are in close contact with each other.
  • Those that were not evaluated were evaluated as “X” and described in Table 1 above.
  • the elastic modulus of the conductive particles 19 is the first and second electrodes 21
  • FIG. 3 is an electron micrograph showing the connection state of the electric device 1 of Example 1
  • FIG. 7 is a simplified diagram showing the connection state, as apparent from FIGS. 3 and 7. Then, the conductive particles 19 penetrate deeply into both the first and second electrodes 21 and 22, so that the first and second electrodes 21 and 22 are directly adhered to each other.
  • FIGS. 4 to 6 are electron micrographs of the connection state of the first and second electrodes of the electric devices of Comparative Examples 2 to 4, respectively.
  • FIGS. 8 to 10 are simplified diagrams of the connection states. It is.
  • the change in the continuity resistance was large at the beginning and after aging of the “continuity reliability test” ′ and the “shock resistance test”.
  • Comparative Example 4 in Comparative Example 1, in which the elastic modulus of the conductive particles is smaller than the elastic modulus of the first and second electrodes, the first and second conductive particles are elastically deformed. Although the electrodes were in contact with each other, the conductive particles did not penetrate either of the first and second electrodes, so after aging in the “continuity reliability test”, as in the other comparative examples, The results of the “impact test” were poor.
  • metal particles were used as the conductive particles.
  • the present invention is not limited to this, and has a higher elastic modulus than the first and second electrodes 2 1 2 2.
  • a resin film and a metal-coated resin particle may be used.
  • a bisphenol ⁇ type epoxy resin was used as the resin component, but the present invention is not limited to this.
  • Urethane resin Various types of resins such as silicone resin, melamine resin, and other types of epoxy resins can be used.
  • an epoxy resin in consideration of the curing speed, the adhesive strength after heat curing, and the like.
  • thermosetting resin such as an epoxy resin
  • a curing agent in combination.
  • various curing agents such as imidazole curing agents, polyamides, phenols, isocyanates, polymercaptans, and acid anhydride curing agents may be used.
  • These curing agents may be converted into micro force cells and used as so-called latent curing agents.
  • various additives such as a filler, an antioxidant, a coloring agent, and a surfactant can be used for the adhesive used in the present invention.
  • thermoplastic resin can be added to the resin component.
  • Various thermoplastic resins, polyester resins, and the like can be used as the thermoplastic resin.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Conductive Materials (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

L'invention concerne un appareil électrique (1), comprenant une première et une seconde électrode (21 et 22), fixées en état de maintien de particules conductrices (19). Les particules conductrices (19) étant profondément ancrées dans la première et la seconde électrode (21 et 22), il est difficile de les séparer de la première et de la seconde électrode (21 et 22), la fiabilité de conduction de cet appareil électrique (1) s'en trouve par conséquent accrue.
PCT/JP2002/001524 2001-02-26 2002-02-21 Appareil electrique et procede de fabrication de cet appareil electrique WO2002069388A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-49616 2001-02-26
JP2001049616A JP2002252247A (ja) 2001-02-26 2001-02-26 電気装置、電気装置の製造方法

Publications (1)

Publication Number Publication Date
WO2002069388A1 true WO2002069388A1 (fr) 2002-09-06

Family

ID=18910694

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/001524 WO2002069388A1 (fr) 2001-02-26 2002-02-21 Appareil electrique et procede de fabrication de cet appareil electrique

Country Status (3)

Country Link
JP (1) JP2002252247A (fr)
TW (1) TWI239577B (fr)
WO (1) WO2002069388A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107072A (ja) * 1996-10-02 1998-04-24 Oki Electric Ind Co Ltd 半導体素子の接続構造および接続方法
JP2000286299A (ja) * 1999-03-30 2000-10-13 Matsushita Electric Ind Co Ltd 半導体装置の接続方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107072A (ja) * 1996-10-02 1998-04-24 Oki Electric Ind Co Ltd 半導体素子の接続構造および接続方法
JP2000286299A (ja) * 1999-03-30 2000-10-13 Matsushita Electric Ind Co Ltd 半導体装置の接続方法

Also Published As

Publication number Publication date
TWI239577B (en) 2005-09-11
JP2002252247A (ja) 2002-09-06

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