WO2002054465A1 - Systeme de sensibilisation a faisceau d'electrons et element de mise en forme d'un faisceau d'electrons - Google Patents

Systeme de sensibilisation a faisceau d'electrons et element de mise en forme d'un faisceau d'electrons Download PDF

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Publication number
WO2002054465A1
WO2002054465A1 PCT/JP2001/009930 JP0109930W WO02054465A1 WO 2002054465 A1 WO2002054465 A1 WO 2002054465A1 JP 0109930 W JP0109930 W JP 0109930W WO 02054465 A1 WO02054465 A1 WO 02054465A1
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WO
WIPO (PCT)
Prior art keywords
electron beam
cooling
forming
electron
shaping
Prior art date
Application number
PCT/JP2001/009930
Other languages
English (en)
Japanese (ja)
Inventor
Harunobu Muto
Hiroshi Yano
Hitoshi Tanaka
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Publication of WO2002054465A1 publication Critical patent/WO2002054465A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures

Definitions

  • the present invention relates to an electron beam exposure apparatus and an electron beam forming member.
  • This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application are incorporated into this application by reference and are incorporated as a part of the description of this application.
  • a slit for shaping the cross-sectional shape of the electron beam is irradiated with a plurality of electron beams to shape the cross-sectional shape of the plurality of electron beams.
  • a slit that shapes the cross-sectional shape of multiple electron beams has the problem that the temperature rises due to the irradiation of multiple electron beams, and the generated heat causes damage and deformation. there were.
  • an object of the present invention is to provide an electron beam exposure apparatus and an electron beam forming member that can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims.
  • the dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention
  • an electron beam exposure apparatus for exposing a pattern on a wafer by using a plurality of electron beams, wherein the apparatus generates a plurality of electron beams.
  • Electron beam generator and shape the cross section of multiple electron beams A first electron beam molding member, wherein the first electron beam molding member comprises: a base; a plurality of forming openings formed in the base for shaping a plurality of electron beam cross-sectional shapes; And a first cooling path through which a refrigerant for cooling the base material passes.
  • the plurality of forming openings are provided along a first direction which is an electron beam irradiation direction, and the first cooling path is provided between the plurality of forming openings in a direction substantially perpendicular to the first direction. It may be provided along a certain second direction.
  • a second cooling passage provided on a second surface that is substantially perpendicular to the first direction and that is a surface inside the substrate substantially parallel to the first surface that is a surface inside the substrate including the first cooling passage is provided. May have.
  • the second cooling path may be provided along a third direction substantially perpendicular to the first direction and the second direction.
  • the plurality of forming openings include a first forming opening and a second forming opening that sandwich the first cooling path, and the first electron beam forming member has a first surface that sandwiches the first forming opening.
  • a third cooling path provided at a position facing the first cooling path, and a fourth cooling path provided at a position facing the second cooling path across the second forming opening on the second surface. You may have more.
  • the electron beam forming member is provided with a third forming opening provided at a position facing the first forming opening with the second cooling path therebetween, and facing the second forming opening with the second cooling path therebetween.
  • a fourth forming opening provided at a position facing the third forming opening with respect to the one cooling path.
  • the electron beam forming member has a plurality of forming openings provided in a lattice shape, and the first cooling path and the second cooling path may be provided between each of the plurality of forming openings. .
  • the first shaping opening may be provided so that the cross-sectional area of the first shaping opening decreases along the irradiation direction of the plurality of electron beams.
  • the apparatus may further include a refrigerant adjustment unit that adjusts an amount of the refrigerant supplied to the first cooling path.
  • the information processing apparatus may further include a temperature acquisition unit that acquires a temperature of the base material, and the refrigerant adjustment unit may adjust an amount of the refrigerant supplied to the first cooling path based on the temperature of the base material.
  • the electron beam forming member has a plurality of first cooling passages, and the temperature acquisition unit
  • the temperature adjustment unit acquires the temperatures at a plurality of positions corresponding to the plurality of first cooling units, and the refrigerant adjustment unit supplies the coolant to each of the plurality of first cooling passages based on each of the temperatures at the plurality of positions of the base material. May be adjusted.
  • a second electron beam shaping member for shaping the cross-sectional shape of the plurality of electron beams that have passed through the first electron beam shaping member; and a cooling member provided adjacent to the second electron beam shaping member.
  • a base a plurality of passage openings provided in the base, through which a plurality of electron beams pass, and a cooling passage provided in the base, through which a coolant for cooling the base passes. You may.
  • an electron beam forming member for forming a cross-sectional shape of a plurality of electron beams, wherein the cross-sectional shape of the plurality of electron beams provided on the base material is provided. It has a plurality of forming openings to be formed, and a cooling passage provided in the base material and through which a coolant for cooling the base material passes.
  • the forming opening may be provided so that the cross-sectional area of the forming opening decreases along the direction in which the forming opening penetrates.
  • FIG. 1 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • FIG. 2 shows a configuration of the first electron beam molding member 14 according to the present embodiment.
  • FIG. 3 shows a configuration of the cooling member 17 according to the present embodiment.
  • FIG. 4 shows another example of the configuration of the first electron beam molding member 14 according to the present embodiment.
  • FIG. 5 shows another example of the configuration of the first electron beam molding member 14 according to the present embodiment.
  • FIG. 6 shows another example of the configuration of the first electron beam molding member 14 according to the present embodiment.
  • FIG. 7 is an enlarged view of the first electron beam molding member 14 according to the present embodiment.
  • the exposure unit 150 generates an electron beam inside the housing 8, and forms an electron beam forming means 110 for shaping the cross-sectional shape of the electron beam as desired, and a plurality of electron beams to the wafer 44.
  • Irradiation switching means 1 12 for independently switching whether or not to irradiate each electron beam, and wafer projection system 11 1 for adjusting the direction and size of the image of the pattern transferred to wafer 44 4 includes an electron optical system.
  • the exposure unit 150 includes a stage system including a wafer stage 46 on which a wafer 44 whose pattern is to be exposed is placed, and a wafer stage drive unit 48 for driving the wafer stage 46.
  • the exposure section 150 is an electronic detection device that detects secondary electrons and reflected electrons emitted from the mark section by an electron beam applied to the mark section provided on the wafer 44 or the wafer stage 46.
  • a part 40 is provided.
  • the electron detector 40 outputs a detection signal corresponding to the detected amount of electrons to the reflected electron processor 94.
  • the electron beam shaping means 110 includes an electron beam generator 10 for generating a plurality of electron beams, a first electron beam shaping member 14 for shaping the cross-sectional shape of the electron beam, a second electron beam shaping member 15, A third electron beam forming member 22, a fixing member 13 for fixing the second electron beam forming member 15, a cooling member 17 for cooling the second electron beam forming member 15, and a plurality of electrons.
  • the first multi-axis electron lens 16 that focuses the beams independently and adjusts the focus of multiple electron beams, and the first shaping that independently deflects the multiple electron beams that have passed through the second electron beam shaping member 15 It has a deflecting section 18 and a second shaping deflecting section 20.
  • the fixing member 13 has a plurality of panel components, and by pressing the panel components against 15, the second electron beam forming member 15 is pressed against the cooling member 17 and the second electronic beam is pressed. It is preferable to fix the arm forming member.
  • the irradiation switching means 1 1 and 2 independently focus the plurality of electron beams and adjust the focus of the plurality of electron beams, and the second multi-axis electron lens 24 and independently bias the plurality of electron beams.
  • the blanking electrode array 26 that independently switches whether or not each electron beam irradiates the wafer 44, and a plurality of apertures through which the electron beams pass.
  • an electron beam shielding member 28 for shielding the electron beam deflected by the blanking electrode array 26.
  • the blanking electrode array 26 may be a blanking aperture'array.device.
  • the wafer projection system 114 focuses a plurality of electron beams independently, and a third multi-axis electron lens 34 that reduces the irradiation diameter of the electron beam, and independently focuses a plurality of electron beams.
  • a fourth multi-axis electron lens 36 that adjusts the focus of the plurality of electron beams; and a deflecting unit 38 that deflects the plurality of electron beams to desired positions on the wafer 44 independently for each electron beam.
  • a fifth multi-axis electron lens 52 that functions as an objective lens for the wafer 44 and independently focuses a plurality of electron beams.
  • the control system 140 includes an individual control unit 120 and an overall control unit 130.
  • the individual control section 120 includes an electron beam control section 80, a multi-axis electron lens control section 82, a shaping deflection control section 84, a blanking electrode array control section 86, and a deflection control section 92.
  • the general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120.
  • the electron beam controller 80 controls the electron beam generator 10.
  • the multi-axis electronic lens control unit 82 includes a first multi-axis electronic lens 16, a second multi-axis electronic lens 24, a third multi-axis electronic lens 34, a fourth multi-axis electronic lens 36, and a second multi-axis electronic lens 36. 5 Controls the current supplied to the multi-axis electron lens 52.
  • the molding deflection control section 84 controls the first molding deflection section 18 and the second molding deflection section 20.
  • the blanking electrode array control unit 86 controls the voltage applied to the deflection electrodes included in the blanking electrode array 26.
  • the deflection controller 92 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 38.
  • the backscattered electron processing unit 94 notifies the overall control unit 130 of the detection signal output from the electron detection unit 40.
  • the wafer stage control unit 96 controls the wafer stage drive unit 48, and Move page 46 to the desired position.
  • the electron beam generator 10 generates a plurality of electron beams.
  • the first electron beam shaping member 14 was provided with a plurality of electron beams generated by the electron beam generator 10 and applied to the first electron beam shaping member 14. It is formed by passing through a plurality of openings.
  • the second electron beam forming member 15 passes the plurality of electron beams passing through the first electron beam forming member 14 and irradiating the second electron beam forming member 15 to the second electron beam forming member 1. It is formed by passing through a plurality of openings provided in 5.
  • a plurality of electron beams may be generated by further including means for dividing the electron beam generated in the electron beam generation unit 10 into a plurality of electron beams.
  • the first multi-axis electron lens 16 independently focuses the plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the third electron beam forming member 22 for each electron beam.
  • the first shaping / deflecting unit 18 is configured to irradiate a plurality of electron beams shaped in a rectangular shape in the second electron beam shaping member 15 to desired positions on the third electron beam shaping member 22, respectively. Deflected independently.
  • the second shaping / deflecting unit 20 deflects the plurality of electron beams deflected by the first shaping / deflecting unit 18 in directions substantially perpendicular to the third electron beam shaping member 22, respectively. Irradiate the beam forming member 22. Then, the third electron beam forming member 22 including the plurality of openings having a rectangular shape is configured to irradiate the plurality of electron beams having a rectangular cross-sectional shape irradiated on the third electron beam forming member 22 with a wafer 44. Is further shaped into an electron beam having a desired cross-sectional shape to be irradiated. In another example, the third electron beam forming member 22 may be a block mask.
  • the second multi-axis electron lens 24 independently focuses the plurality of electron beams and adjusts the focus of the electron beam on the blanking electrode array 26 independently. Then, the plurality of electron beams whose focus has been adjusted by the second multi-axis electron lens 24 pass through a plurality of apertures included in the blanking electrode array 26.
  • the blanking electrode array control unit 86 controls whether or not to apply a voltage to a deflection electrode provided near each aperture in the blanking electrode array 26.
  • the blanking electrode array 26 switches whether to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode.
  • the electron beam not deflected by the blanking electrode array 26 passes through the third multi-axis electron lens 34. Then, the third multi-axis electron lens 34 reduces the electron beam diameter of the electron beam passing through the third multi-axis electron lens 34. The reduced electron beam passes through an opening included in the electron beam shielding member 28. Further, the electron beam shielding member 28 shields the electron beam deflected by the blanking electrode array 26. The electron beam that has passed through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. Then, the fourth multi-axis electron lens 36 independently focuses the incident electron beams, and adjusts the focus of the electron beams with respect to the deflection unit 38, respectively. The electron beam whose focus has been adjusted by the fourth multi-axis electron lens 36 is incident on the deflection unit 38.
  • the deflection control unit 92 controls a plurality of deflectors included in the deflection unit 38, and each of the electron beams incident on the deflection unit 38 is directed to a position where the wafer 44 should be irradiated. Deflected independently.
  • the fifth multi-axis electron lens 52 adjusts the focus of each electron beam passing through the fifth multi-axis electron lens 52 on the wafer 44. Then, each electron beam having a cross-sectional shape to be irradiated on the wafer 44 is irradiated to a desired position to be irradiated on the wafer 44.
  • the wafer stage drive unit 48 continuously moves the wafer stage 46 in a fixed direction based on an instruction from the stage control unit 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is shaped into a shape that should be irradiated on the wafer 44, and an aperture for passing the electron beam to be irradiated on the wafer 44 is defined. By deflecting each electron beam to a position where the wafer 44 should be irradiated by the unit 38, a desired circuit pattern can be exposed on the wafer 44.
  • FIG. 2 shows a configuration of the first electron beam molding member 14 according to the present embodiment.
  • Fig. 2 (a) 3 is a top view of the first electron beam molding member 14.
  • FIG. FIG. 2B shows a cross section of the first electron beam forming member 14 and a supply system for supplying a coolant to the cooling passage 210.
  • the first electron beam molding member 14 includes: a base material 200; a plurality of forming openings 220 provided in the base material 200 for forming a cross-sectional shape of a plurality of electron beams; And a cooling path 210 through which a refrigerant 230 for cooling the substrate 200 passes.
  • the plurality of forming openings 220 are provided along the electron beam irradiation direction, and the cooling path 210 is provided along the direction substantially perpendicular to the electron beam irradiation direction. Preferably, it is provided between 220. Preferably, the forming opening 220 is provided so that the cross-sectional area of the forming opening 220 decreases along the direction in which the forming opening 220 penetrates. That is, it is preferable that the shaping opening 220 be provided so that the cross-sectional area of the shaping opening 220 decreases along the electron beam irradiation direction.
  • the first electron beam forming member 14 is preferably formed of a metal having good heat conductivity and low density. Further, it is preferable that the surface of the first electron beam forming member 14 is coated with a metal such as platinum.
  • the electron beam exposure apparatus 100 includes a cooling medium supply section 240 for supplying a cooling medium 230 to the cooling path 210 of the first electron beam forming member 14, and a cooling medium supply section 240.
  • a refrigerant adjustment unit 250 that adjusts the amount of refrigerant 230 supplied to 210, a temperature acquisition unit 260 that obtains the temperature of substrate 200, a refrigerant supply unit 240, and a cooling path And a cooling pipe 270 for connecting the cooling pipe 210 with the cooling pipe 270.
  • the temperature acquisition unit 260 acquires the temperature of the base material 200 by using a means for measuring the temperature of the base material 200, and notifies the refrigerant adjustment unit 250 of the temperature.
  • the temperature acquisition unit 260 may acquire the temperatures at a plurality of locations on the base material 200 and notify the refrigerant adjustment unit 250 of the temperature.
  • the refrigerant adjustment unit 250 controls the refrigerant supply unit 240 based on the temperature of the base material 200 acquired by the temperature acquisition unit 260, and controls the refrigerant supply to the cooling path 210. The amount is adjusted to control the substrate 200 to the desired temperature.
  • FIG. 3 shows a configuration of the cooling member 17 according to the present embodiment.
  • FIG. 3A is a top view of the cooling member 17.
  • FIG. 3B shows a cross section of the cooling member 17 and a supply system for supplying a cooling medium to the cooling path 310.
  • the cooling member 17 was provided in the base member 300, a plurality of passage openings 320 provided in the base member 300, through which a plurality of electron beams passed, and provided in the base member 300.
  • a cooling path 310 through which a coolant 330 for cooling the second electron beam forming member 15 via the base material 300 passes.
  • the plurality of passage openings 3200 are provided along the electron beam irradiation direction, and the cooling passages 310 are arranged along the direction substantially perpendicular to the electron beam irradiation direction. It is preferable to be provided between them.
  • the electron beam exposure apparatus 100 includes a cooling medium supply section 340 for supplying the cooling medium 330 to the cooling path 310 of the cooling member 17, and a cooling medium supply section 350 for the cooling medium supply section 350.
  • a refrigerant adjustment unit 350 that adjusts the amount of the refrigerant 330 to be supplied;
  • a temperature acquisition unit 360 that acquires the temperature of the base material 300;
  • a cooling pipe 370 for connecting the cooling water.
  • the temperature obtaining unit 360 obtains the temperature of the base material 300 by using a means for measuring the temperature of the base material 300, and notifies the refrigerant adjusting unit 350 of the obtained temperature.
  • the refrigerant adjusting section 350 controls the refrigerant supply section 340 based on the temperature of the base material 300 acquired by the temperature acquisition section 360, and supplies the coolant to the cooling path 310.
  • the amount of the cooling medium is adjusted, and the substrate 300 is controlled to a desired temperature.
  • the base material 300 controlled to the desired temperature cools the second electron beam forming member 15 to the desired temperature.
  • the electron beam exposure apparatus 100 by controlling the temperature of the second electron beam molding member 15 by cooling the cooling member 17, damage to the second electron beam molding member 14, Deformation and the like can be suppressed. Therefore, according to the electron beam exposure apparatus 100 of the present embodiment, the electron beam cross-sectional shape can be accurately formed, In addition, a change in the shape of the electron beam applied to the wafer can be reduced.
  • the cooling member 17 is another example of the first electron beam forming member 14 described below. May have the same configuration as that of.
  • FIG. 4 shows another example of the configuration of the first electron beam molding member 14 according to the present embodiment.
  • FIG. 4A is a top view of the first electron beam molding member 14.
  • FIG. 4 (b) shows a cross section of the first electron beam forming member 14 and a supply system for supplying a coolant to the cooling passages 210 and 215.
  • the first electron beam forming member 14 in the present example has a first surface inside the substrate 200 that is substantially perpendicular to the electron beam irradiation direction and at a first depth from the surface of the substrate 200.
  • the cooling path 210 provided in the base member 200 is substantially parallel to the first surface, and has a surface force of the base member 200 ⁇ the second surface inside the base member 200 having the second depth. And a cooling path 2 15 provided.
  • the cooling path 2 15 is preferably provided along a direction substantially perpendicular to the irradiation direction of the electron beam and the direction along the cooling path 210. Further, the first electron beam forming member 14 has a plurality of forming openings 220 provided in a lattice shape, and the cooling path 210 and the cooling path 215 have a plurality of forming openings 2. Preferably, provided between each of the twenty.
  • the electron beam exposure apparatus 100 in this example includes a coolant supply unit 240 that supplies a coolant 230 to the cooling path 210 of the first electron beam forming member 14, and a coolant 2 to the cooling path 2 15.
  • Refrigerant supply unit 245 supplying 335, amount of refrigerant 230 supplied by refrigerant supply unit 240 to cooling channel 210, and refrigerant supply unit 245 supplied to cooling channel 215 by refrigerant supply unit 245
  • the refrigerant adjustment unit 250 adjusts the amounts of the refrigerant supplied to the cooling passages 210 and 15 based on the temperature of the base material 200 acquired by the temperature acquiring unit 260, respectively.
  • the substrate 200 is controlled to a desired temperature.
  • the coolant is caused to flow around the plurality of forming openings 220 for forming the electron beam by using two cooling paths 210 and 215 which are substantially orthogonal to each other. Thereby, the first electron beam forming member 14 can be efficiently and uniformly cooled.
  • cooling paths 210 and 215 have cooling pipes inside the cooling paths 210 and 215, and the refrigerant supply units 240 and 245 supply the refrigerant to the cooling pipes. You may. Further, the refrigerant may be a liquid or a gas.
  • FIG. 5 shows another example of the configuration of the first electron beam molding member 14 according to the present embodiment.
  • FIG. 5A is a top view of the first electron beam molding member 14.
  • FIG. 5 (b) shows a cross section of the first electron beam forming member 14 and a supply system for supplying a coolant to the cooling passages 210a and 210b.
  • the first electron beam forming member 14 in the present example has a cooling path 210a and a cooling path 21Ob provided to independently cool different regions in the base material 200.
  • the electron beam exposure apparatus 100 in the present example includes a cooling medium supply section 240a for supplying a cooling medium 230a to a cooling path 210a of the first electron beam forming member 14, and cooling.
  • Refrigerant supply section 240b for supplying refrigerant 230b to channel 210b, amount of refrigerant 230a supplied by refrigerant supply section 240a to cooling path 210a, and refrigerant A refrigerant adjustment unit 250 that adjusts an amount of the refrigerant 230 b supplied by the supply unit 240 b to the cooling path 210 b; a cooling path 210 a and a cooling path 2 in the base material 200
  • Temperature acquisition unit 260 for acquiring the temperature of the area provided with 10 b, cooling pipe 2 70 a connecting refrigerant supply unit 240 a and cooling path 210 a, and refrigerant supply It further includes a cooling pipe 270b connecting the unit 240b and the cooling path 210b.
  • the temperature acquisition unit 260 determines the temperature of the region of the base material 200 where the cooling path 210 a is provided, and the temperature of the region of the base material 200 where the cooling path 210 b is provided. And notifies the refrigerant adjustment unit 250.
  • the refrigerant adjustment unit 25 ⁇ controls the refrigerant supply unit 240 a and the refrigerant supply unit 240 b based on the temperature of the substrate 200 acquired by the temperature acquisition unit 260.
  • the amount of the refrigerant to be supplied to each of the cooling passages 210a and 210b is adjusted, and the base material 200 is controlled to a desired temperature.
  • FIG. 6 shows another example of the configuration of the first electron beam molding member 14 according to the present embodiment.
  • FIG. 6A is a top view of the first electron beam forming member 14.
  • FIG. 6B shows a cross section of the first electron beam forming member 14 and a supply system for supplying a cooling medium to the cooling passages 210 and 215. It is.
  • the first electron beam forming member 14 in the present example is provided with a cooling path 210 provided substantially on the first surface which is substantially perpendicular to the electron beam irradiation direction and has a first depth from the surface of the substrate 200. And a cooling path 215 provided on a second surface substantially parallel to the first surface and at a second depth from the surface of the base material 200.
  • the electron beam exposure apparatus 100 in this example includes a cooling pipe 28 provided so as to pass through the cooling medium 290 supplied by the cooling medium supply unit 240 and the cooling paths 2 10 and 2 15.
  • FIG. 7 is an enlarged view of the first electron beam molding member 14 in the present example.
  • FIG. 7A is an enlarged view of the upper surface of the first electron beam molding member 14.
  • the first electron beam molding member 14 in this example has molding openings 220 a, 220 b, 220 c, and 220 d, and cooling passages 210 c, 210 d, and 210 a , And 215b.
  • the cooling path 210c is provided between the forming opening 22a and the forming opening 220b on the first surface, which is a surface inside the substrate 200 substantially perpendicular to the electron beam irradiation direction.
  • the cooling passage 210d is provided on the first surface at a position facing the cooling passage 210c across the forming opening 220a.
  • the cooling path 2 15 a is provided on a second surface which is a surface inside the base material substantially parallel to the first surface.
  • the cooling path 215b is provided on the second surface at a position facing the cooling path 215a with the forming opening 220a interposed therebetween.
  • the forming opening 220c is provided at a position facing the forming opening 220a with the cooling path 215a therebetween.
  • the forming opening 220d is provided at a position facing the forming opening 220c with the cooling passage 210c therebetween and facing the forming opening 220b with the cooling passage 2115a therebetween. .
  • the electron beam exposure apparatus 1 00, and the third electron beam shaping member 22 and the electron beam blocking member 28 may further include a cooling member 1 7 is cooled c,
  • the third electron beam forming member 22 and the electron beam shielding member 28 It may have a structure similar to that of the rubber molded member. In this case, it is desirable that the openings provided in the third electron beam forming member 22 and the electron beam shielding member 28 have a rectangular shape.
  • an electron beam forming member for forming a plurality of electron beam cross-sectional shapes can be efficiently cooled.

Abstract

L'invention concerne un système de sensibilisation à faisceau d'électrons pour former un motif sur une plaquette à l'aide d'une pluralité de faisceaux d'électrons. Ce système comprend une section permettant de générer une pluralité de faisceaux d'électrons, et un premier élément de mise en forme d'un faisceau d'électrons pour former la section transversale d'une pluralité de faisceaux d'électrons. Ce premier élément de mise en forme de faisceau d'électrons possède un matériau de base, une pluralité d'ouvertures réalisées dans ce matériau de base pour former la section transversale d'une pluralité de faisceaux d'électrons, et un premier passage de refroidissement situé dans le matériau de base pour faire circuler un liquide de refroidissement pour refroidir le matériau de base.
PCT/JP2001/009930 2000-12-28 2001-11-14 Systeme de sensibilisation a faisceau d'electrons et element de mise en forme d'un faisceau d'electrons WO2002054465A1 (fr)

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Application Number Priority Date Filing Date Title
JP2000402324A JP4355446B2 (ja) 2000-12-28 2000-12-28 電子ビーム露光装置及び電子ビーム成形部材
JP2000-402324 2000-12-28

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EP2302459A2 (fr) 2002-10-25 2011-03-30 Mapper Lithography Ip B.V. Système de lithographie
US10324385B2 (en) 2011-09-12 2019-06-18 Mapper Lithography Ip B.V. Substrate processing apparatus

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EP1746630B1 (fr) * 2005-07-20 2009-02-25 Carl Zeiss SMS GmbH Dispositf d'exposition avec des particules chargées et arrangement de manipulation d'un faisceau
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
KR101755577B1 (ko) * 2010-11-13 2017-07-07 마퍼 리쏘그라피 아이피 비.브이. 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템
JP5973061B2 (ja) * 2012-05-14 2016-08-23 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法

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JPH11224846A (ja) * 1998-02-04 1999-08-17 Nikon Corp レチクル照明光学系
JPH11354063A (ja) * 1998-06-05 1999-12-24 Nikon Corp 電子線転写装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2302459A2 (fr) 2002-10-25 2011-03-30 Mapper Lithography Ip B.V. Système de lithographie
EP2302460A2 (fr) 2002-10-25 2011-03-30 Mapper Lithography Ip B.V. Système de lithographie
EP2302457A2 (fr) 2002-10-25 2011-03-30 Mapper Lithography Ip B.V. Système de lithographie
EP2302458A2 (fr) 2002-10-25 2011-03-30 Mapper Lithography Ip B.V. Système de lithographie
EP2336830A1 (fr) 2002-10-25 2011-06-22 Mapper Lithography Ip B.V. Système de lithographie
US10324385B2 (en) 2011-09-12 2019-06-18 Mapper Lithography Ip B.V. Substrate processing apparatus
US11181833B2 (en) 2011-09-12 2021-11-23 Asml Netherlands B.V. Substrate processing apparatus

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