WO2002049035A3 - Dispositif a memoire et procede permettant de le faire fonctionner - Google Patents
Dispositif a memoire et procede permettant de le faire fonctionner Download PDFInfo
- Publication number
- WO2002049035A3 WO2002049035A3 PCT/DE2001/004524 DE0104524W WO0249035A3 WO 2002049035 A3 WO2002049035 A3 WO 2002049035A3 DE 0104524 W DE0104524 W DE 0104524W WO 0249035 A3 WO0249035 A3 WO 0249035A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory device
- same
- memory
- aim
- hence
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002550256A JP2004516646A (ja) | 2000-12-11 | 2001-12-03 | メモリデバイスおよびメモリデバイスを動作させる方法 |
DE50113766T DE50113766D1 (de) | 2000-12-11 | 2001-12-03 | Speichereinrichtung und verfahren zu deren betrieb |
EP01270888A EP1342243B8 (fr) | 2000-12-11 | 2001-12-03 | Dispositif a memoire et procede permettant de le faire fonctionner |
KR10-2003-7007733A KR20040011442A (ko) | 2000-12-11 | 2001-12-03 | 메모리 장치 및 그 동작 방법 |
US10/458,965 US6898106B2 (en) | 2000-12-11 | 2003-06-11 | Using FeRam/MRAM cells having a high degree of flexibility and compact construction and method of operating the memory device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10061580.5 | 2000-12-11 | ||
DE10061580A DE10061580A1 (de) | 2000-12-11 | 2000-12-11 | Speichereinrichtung und Verfahren zu deren Betrieb |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/458,965 Continuation US6898106B2 (en) | 2000-12-11 | 2003-06-11 | Using FeRam/MRAM cells having a high degree of flexibility and compact construction and method of operating the memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002049035A2 WO2002049035A2 (fr) | 2002-06-20 |
WO2002049035A3 true WO2002049035A3 (fr) | 2003-01-23 |
Family
ID=7666635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/004524 WO2002049035A2 (fr) | 2000-12-11 | 2001-12-03 | Dispositif a memoire et procede permettant de le faire fonctionner |
Country Status (7)
Country | Link |
---|---|
US (1) | US6898106B2 (fr) |
EP (1) | EP1342243B8 (fr) |
JP (1) | JP2004516646A (fr) |
KR (1) | KR20040011442A (fr) |
CN (1) | CN1322512C (fr) |
DE (2) | DE10061580A1 (fr) |
WO (1) | WO2002049035A2 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7264985B2 (en) * | 2005-08-31 | 2007-09-04 | Freescale Semiconductor, Inc. | Passive elements in MRAM embedded integrated circuits |
US7495951B1 (en) * | 2006-04-27 | 2009-02-24 | Spansion Llc | Resistive memory cell array with common plate |
US7877858B2 (en) * | 2007-09-20 | 2011-02-01 | Galtronics Ltd. | Method of manufacturing a multi-layer conductive tube antenna |
US9105342B2 (en) | 2013-01-31 | 2015-08-11 | International Business Machines Corporation | Read circuit for memory |
US20150124514A1 (en) * | 2013-11-05 | 2015-05-07 | Purdue Research Foundation | Lifetime of Ferroelectric Devices |
CN110428858B (zh) * | 2019-07-11 | 2021-09-24 | 清华大学 | 基于具有滞回特性器件的静态存储器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5487032A (en) * | 1994-11-10 | 1996-01-23 | Symetrix Corporation | Method and apparatus for reduced fatigue in ferroelectric memory elements |
US5744832A (en) * | 1994-10-04 | 1998-04-28 | U.S. Philips Corporation | Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier |
US5995407A (en) * | 1998-10-13 | 1999-11-30 | Celis Semiconductor Corporation | Self-referencing ferroelectric memory |
US6094369A (en) * | 1997-06-23 | 2000-07-25 | Rohm Co., Ltd. | Ferroelectric nonvolatile memory element having capacitors of same dielectric constant and method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06236969A (ja) * | 1993-02-12 | 1994-08-23 | Hitachi Ltd | 強誘電体メモリ |
US5644151A (en) * | 1994-05-27 | 1997-07-01 | Nippon Steel Corporation | Semiconductor memory device and method for fabricating the same |
US5579257A (en) * | 1995-08-31 | 1996-11-26 | Motorola, Inc. | Method for reading and restoring data in a data storage element |
KR100224673B1 (ko) * | 1996-12-13 | 1999-10-15 | 윤종용 | 불휘발성 강유전체 메모리장치 및 그의 구동방법 |
JPH10302481A (ja) * | 1997-04-24 | 1998-11-13 | Nec Corp | 強誘電体メモリ |
JPH11224933A (ja) * | 1998-02-05 | 1999-08-17 | Sanyo Electric Co Ltd | 容量素子及び記憶装置 |
DE19853447A1 (de) * | 1998-11-19 | 2000-05-25 | Siemens Ag | Magnetischer Speicher |
KR100348576B1 (ko) * | 1999-09-30 | 2002-08-13 | 동부전자 주식회사 | 강유전체 메모리 |
-
2000
- 2000-12-11 DE DE10061580A patent/DE10061580A1/de not_active Withdrawn
-
2001
- 2001-12-03 KR KR10-2003-7007733A patent/KR20040011442A/ko not_active Application Discontinuation
- 2001-12-03 EP EP01270888A patent/EP1342243B8/fr not_active Expired - Lifetime
- 2001-12-03 WO PCT/DE2001/004524 patent/WO2002049035A2/fr active IP Right Grant
- 2001-12-03 JP JP2002550256A patent/JP2004516646A/ja active Pending
- 2001-12-03 CN CNB018203752A patent/CN1322512C/zh not_active Expired - Fee Related
- 2001-12-03 DE DE50113766T patent/DE50113766D1/de not_active Expired - Fee Related
-
2003
- 2003-06-11 US US10/458,965 patent/US6898106B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5744832A (en) * | 1994-10-04 | 1998-04-28 | U.S. Philips Corporation | Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier |
US5487032A (en) * | 1994-11-10 | 1996-01-23 | Symetrix Corporation | Method and apparatus for reduced fatigue in ferroelectric memory elements |
US6094369A (en) * | 1997-06-23 | 2000-07-25 | Rohm Co., Ltd. | Ferroelectric nonvolatile memory element having capacitors of same dielectric constant and method thereof |
US5995407A (en) * | 1998-10-13 | 1999-11-30 | Celis Semiconductor Corporation | Self-referencing ferroelectric memory |
Also Published As
Publication number | Publication date |
---|---|
EP1342243B1 (fr) | 2008-03-19 |
EP1342243A2 (fr) | 2003-09-10 |
KR20040011442A (ko) | 2004-02-05 |
CN1479923A (zh) | 2004-03-03 |
DE50113766D1 (de) | 2008-04-30 |
DE10061580A1 (de) | 2002-06-27 |
US6898106B2 (en) | 2005-05-24 |
EP1342243B8 (fr) | 2008-05-21 |
US20040022117A1 (en) | 2004-02-05 |
CN1322512C (zh) | 2007-06-20 |
JP2004516646A (ja) | 2004-06-03 |
WO2002049035A2 (fr) | 2002-06-20 |
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