WO2002044446A3 - Procede de commande de l'historique des temperatures de silicium monocristallin a lacunes predominantes - Google Patents

Procede de commande de l'historique des temperatures de silicium monocristallin a lacunes predominantes Download PDF

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Publication number
WO2002044446A3
WO2002044446A3 PCT/US2001/044180 US0144180W WO0244446A3 WO 2002044446 A3 WO2002044446 A3 WO 2002044446A3 US 0144180 W US0144180 W US 0144180W WO 0244446 A3 WO0244446 A3 WO 0244446A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crystal silicon
thermal history
ingot
vacancy
Prior art date
Application number
PCT/US2001/044180
Other languages
English (en)
Other versions
WO2002044446A2 (fr
Inventor
Makoto Kojima
Yasuhiro Ishii
Original Assignee
Memc Electronic Materials
Makoto Kojima
Yasuhiro Ishii
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000374147A external-priority patent/JP2002226293A/ja
Application filed by Memc Electronic Materials, Makoto Kojima, Yasuhiro Ishii filed Critical Memc Electronic Materials
Priority to US10/433,144 priority Critical patent/US20040055527A1/en
Priority to KR10-2003-7007250A priority patent/KR20030059293A/ko
Priority to EP01989767A priority patent/EP1346086A2/fr
Publication of WO2002044446A2 publication Critical patent/WO2002044446A2/fr
Publication of WO2002044446A3 publication Critical patent/WO2002044446A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

L'invention concerne un procédé Czochralski destiné à produire un lingot de silicium monocristallin possédant un historique des températures uniforme. Dans ce procédé, l'énergie fournie au dispositif de chauffe latéral est diminuée pendant la croissance d'une partie du corps principal de ce dernier, et éventuellement de l'extrémité conique du lingot, tandis que l'énergie fournie au dispositif de chauffe inférieur est graduellement augmentée pendant la croissance de cette même partie. Le procédé de l'invention permet à une partie importante du lingot d'être obtenue par production de plaquettes possédant moins de défauts de points lumineux excédents environ 0,2 microns et une intégrité d'oxyde de grille améliorée.
PCT/US2001/044180 2000-11-30 2001-11-26 Procede de commande de l'historique des temperatures de silicium monocristallin a lacunes predominantes WO2002044446A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/433,144 US20040055527A1 (en) 2000-11-30 2001-11-26 Process for controlling thermal history of vacancy-dominated, single crystal silicon
KR10-2003-7007250A KR20030059293A (ko) 2000-11-30 2001-11-26 베이컨시-지배 단결정 실리콘의 열 이력을 제어하는 공정
EP01989767A EP1346086A2 (fr) 2000-11-30 2001-11-26 Procede de commande de l'historique des temperatures de silicium monocristallin a lacunes predominantes

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000-364601 2000-11-30
JP2000364601 2000-11-30
JP2000374147A JP2002226293A (ja) 2000-11-30 2000-12-08 シリコン単結晶の成長方法
JP2000-374147 2000-12-08
US27398001P 2001-03-07 2001-03-07
US60/273,980 2001-03-07

Publications (2)

Publication Number Publication Date
WO2002044446A2 WO2002044446A2 (fr) 2002-06-06
WO2002044446A3 true WO2002044446A3 (fr) 2003-01-16

Family

ID=27345313

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/044180 WO2002044446A2 (fr) 2000-11-30 2001-11-26 Procede de commande de l'historique des temperatures de silicium monocristallin a lacunes predominantes

Country Status (5)

Country Link
EP (1) EP1346086A2 (fr)
KR (1) KR20030059293A (fr)
CN (1) CN1478156A (fr)
TW (1) TW583353B (fr)
WO (1) WO2002044446A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
JP2005162599A (ja) 2003-12-03 2005-06-23 Siltron Inc 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法
JP4753308B2 (ja) 2006-07-13 2011-08-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハ素材の溶解方法及び半導体ウェーハの結晶育成方法
KR101032156B1 (ko) * 2009-05-14 2011-05-02 (주)혜성나노텍 비닐하우스용 조립형 회전축 롤러
CN109750350A (zh) * 2019-03-20 2019-05-14 丽江隆基硅材料有限公司 一种调整单晶炉加热器功率的方法及单晶炉
JP2022529451A (ja) * 2019-04-18 2022-06-22 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法
CN114351243B (zh) * 2021-12-07 2023-11-07 山东有研半导体材料有限公司 一种n型掺杂硅单晶的制备方法以及所制备的掺杂硅单晶

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152867A (en) * 1990-03-12 1992-10-06 Osaka Titanium Co., Ltd. Apparatus and method for producing silicon single crystal
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
WO1998038675A1 (fr) * 1997-02-26 1998-09-03 Memc Electronic Materials, Inc. Tranche de silicium avec precipitation ideale de l'oxygene et procede sans diffusion exterieure d'oxygene pour de telles tranches
WO1998045508A1 (fr) * 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Silicium a taux de defauts reduit, a lacunes predominantes
US6113688A (en) * 1997-03-27 2000-09-05 Sumitomo Metal Industries, Ltd. Process for producing single crystals
US6132507A (en) * 1997-12-01 2000-10-17 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process and device for the production of a single crystal

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152867A (en) * 1990-03-12 1992-10-06 Osaka Titanium Co., Ltd. Apparatus and method for producing silicon single crystal
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
WO1998038675A1 (fr) * 1997-02-26 1998-09-03 Memc Electronic Materials, Inc. Tranche de silicium avec precipitation ideale de l'oxygene et procede sans diffusion exterieure d'oxygene pour de telles tranches
US6113688A (en) * 1997-03-27 2000-09-05 Sumitomo Metal Industries, Ltd. Process for producing single crystals
WO1998045508A1 (fr) * 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Silicium a taux de defauts reduit, a lacunes predominantes
US6132507A (en) * 1997-12-01 2000-10-17 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process and device for the production of a single crystal

Also Published As

Publication number Publication date
KR20030059293A (ko) 2003-07-07
WO2002044446A2 (fr) 2002-06-06
TW583353B (en) 2004-04-11
EP1346086A2 (fr) 2003-09-24
CN1478156A (zh) 2004-02-25

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