WO2002031862A2 - Dispositif de chauffage rapide et uniforme d"un substrat par rayonnement infrarouge - Google Patents
Dispositif de chauffage rapide et uniforme d"un substrat par rayonnement infrarouge Download PDFInfo
- Publication number
- WO2002031862A2 WO2002031862A2 PCT/FR2001/003171 FR0103171W WO0231862A2 WO 2002031862 A2 WO2002031862 A2 WO 2002031862A2 FR 0103171 W FR0103171 W FR 0103171W WO 0231862 A2 WO0231862 A2 WO 0231862A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lamps
- substrate
- heating device
- infrared radiation
- reflector
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 230000005855 radiation Effects 0.000 title claims abstract description 19
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- 150000002367 halogens Chemical class 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 229910052845 zircon Inorganic materials 0.000 claims description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000013529 heat transfer fluid Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Definitions
- the invention relates to a device for heating a substrate, comprising infrared radiation lamps intended to ensure rapid heat treatment of the substrate inside a closed reaction chamber, which comprises a transparent window through which the said infrared radiation.
- the rapid thermal processes of RTP annealing and RTCVD vapor deposition generally make use of an infrared radiation oven generated by halogen lamps.
- the substrate for example made of silicon in the technologies for manufacturing microelectronics products, is installed under a controlled atmosphere, in a closed enclosure, and the infrared radiation is directed onto the surface face of the substrate through a transparent window.
- the temperatures reached during heat treatments can be high, often higher than 1000 ° C, with temperature rise rates likely to reach some 100 ° C / second.
- One of the important parameters of the treatment is the temperature uniformity over the entire surface of the treated substrate, since the presence of thermal gradients of a few degrees Celsius between the central zone and the peripheral zone of the substrate can cause differences in the quality of the substrate, and / or lack of uniformity in the physico-chemical properties of the layers present on the surface of the substrate.
- the energy lost on the edges of the substrate is higher than in the center, resulting in a lower temperature at the edge than in the center.
- US 6,108,491 relates to spot lamps, not linear lamps.
- the spot lamps are arranged in a circular manner below the substrate installed on a heating support (susceptor).
- the second series of lamps is arranged below, but on a smaller diameter to cover the central part of the heating support.
- Document WO 00 30157 relates to two series of UV lamps with an arrangement on the two faces of the reactor, and mounting at 90 °.
- the object of the invention consists in producing a heating device with controlled and directional infrared radiation, intended to carry out a rapid and uniform heat treatment of substrates of different geometries and dimensions.
- the infrared lamps are distributed over two superposed stages extending on the same side of the substrate, the lamps of the lower stage being arranged perpendicularly to the lamps of the upper stage,
- means for adjusting the power supply by groups of lamps provide greater heating at the edges than at the center of the substrate
- a reflector is shaped according to a distribution grid intended to reflect and channel the infrared radiation to control the power ratios between the different heating zones.
- the distribution grid of the reflector is constituted by an interlacing of blades delimiting a plurality of compartments of variable sections assigned to the heating zones.
- the blades are crossed at right angles, and are made of a material having an optimum reflection index for reflecting infrared rays.
- the material of the blades can be metallic (steel or aluminum) or non-metallic (ceramic, zircon).
- the lamps with infrared radiation are halogen lamps, and each stage advantageously comprises the same number of tubular lamps staggered at regular intervals extending parallel to one another.
- the reflector can be interposed between the lower stage of the lamps and the window, or be directly nested between the zones of the lamps, so as to cover the height of the two sets of lamps.
- FIG. 1 is a schematic view of a reactor equipped with the heating device according to the invention
- FIG. 2 shows a plan view of Figure 1;
- FIG. 3 shows the power distribution table by heating zones;
- FIG. 4 illustrates a perspective view of the reflector associated with a heating device with twelve lamps per stage
- FIG. 5 is an identical view to Figure 4 of an alternative embodiment.
- a heating device 10 with infrared radiation is used in the rapid thermal processes implemented in the technologies for manufacturing substrates of microelectronics. Other applications are possible for producing micro-sensors and solar energy panels.
- the substrate 12, for example made of silicon, is arranged in the middle zone of a reaction chamber 14 delimited by a closed enclosure 16, which is made of stainless steel or quartz.
- Pumping means 18 are connected to the enclosure 16 to work at atmospheric pressure, or lower the internal pressure of the reaction chamber 14 to secondary voids.
- a neutral or reactive gas flow 20 can be introduced by injection means 22 into the reaction chamber 14 to carry out treatments under an inert or reactive atmosphere, in particular annealing of the substrate 12, depositing thin layers on the exposed surface substrate 12 (CVD chemical vapor deposition technique), modification of the physicochemical properties of the surface, etc.
- the heating device 10 with infrared radiation makes it possible to obtain a rapid and uniform heat treatment of the entire exposed surface of the substrate 12.
- the heating device 10 is composed of two series of halogen lamps 24, 26 distributed tubular on two stages A and B superimposed inside a housing 28.
- the first lower stage A comprises a plurality of halogen lamps 24, for example six in Figures 1 to 3, staggered at regular intervals and extending parallel l to each other in the same shot.
- the second upper stage B is provided with an identical number of lamps 26 arranged perpendicularly to the lamps 24 of the first stage A, and in the same plane parallel to the first.
- the halogen lamps 24, 26 are supplied in groups by being connected to an interconnection circuit 30 connected to a supply device 32 with adjustable voltage for adjusting the radiated electric power in different heating zones.
- the six lamps 26 of stage B are supplied according to three zones 1, 2, 3.
- zone 1 is defined by the two lamps 26 at the ends, zone 2 by the two intermediate lamps 26, and zone 3 by the two internal lamps 26 juxtaposed.
- the six lamps 24 of stage A are supplied according to three other zones 4, 5, 6 orthogonal to zones 1, 2 3.
- Zone 4 is delimited by the two lamps 24 at the ends, zone 5 by the two intermediate lamps 24, and zone 6 by the two internal lamps 24.
- Adjusting the power in each of zones 1 to 6 makes it possible to compensate for the effects of radial thermal gradients linked to the thermal losses by convection on the edges of the substrate 12.
- the power profile in the different zones determines the image of the temperature at the surface of the substrate 12.
- a uniform temperature profile is obtained over the entire substrate 12 following compensation for the heat losses along the edges of the substrate 12.
- the structure illustrated in FIG. 2 makes it possible to obtain a power distribution:
- the enclosure 16 of the reaction chamber 14 is provided with a transparent porthole 34, for example made of quartz, allowing the infrared radiation emitted by the halogen lamps 24, 26 to pass from outside the enclosure 16.
- a reflector 36 In the interval located between the heating device 10 and the window 34, is arranged a reflector 36, intended to reflect the infrared radiation to control the power ratios between the different heating zones, given that the power necessary to compensate for the thermal differences between the center and edges of the substrate 12 vary with the temperature of the substrate 12.
- each stage A and B comprises twelve lamps (two lamps 24 being hidden to the left of stage A).
- the reflector 36 disposed under the housing of the lamps 24, 26, is shaped according to a distribution grid 38 constituted by an interlacing of four longitudinal blades 40 and four transverse blades 42, so as to define different quadrangular compartments open on the side of the window 34 and on the side of the lamps 24, 26.
- the compartments have variable sections assigned to each of the heating zones, thus making it possible to channel the light energy emitted by the different lighting zones of the lamps 24, 26 towards the corresponding zones of the substrate 12 .
- the crossed blades 40, 42 of the reflector 36 are made of a material having an optimum reflection index for reflecting infrared rays.
- the material can be non-metallic, for example ceramic or zircon-based. It is also possible to use a grid made of metallic material, for example steel, aluminum, possibly with a surface coating of gold or silver.
- the reflector 36 can advantageously be cooled by a heat transfer fluid.
- the compensation by heating zones is thus precisely controlled since the illumination zones of the substrate 12 are perfectly delimited by the reflector 36 to minimize the effects of interference between zones.
- the blades 142, 144 constituting the grid 138 of the reflector 136 are nested between the lamps 24, 26 so as to cover the height of the two series A and B. As a result, the zones of the lamps 24, 26 are completely framed in the screens.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Furnace Details (AREA)
- Drying Of Solid Materials (AREA)
- Physical Vapour Deposition (AREA)
- Resistance Heating (AREA)
- Control Of Resistance Heating (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60133628T DE60133628T2 (de) | 2000-10-13 | 2001-10-12 | Vorrichtung zur schnellen und gleichmässigen heizung eines halbleitersubstrats durch infrarotstrahlung |
CA2394426A CA2394426C (fr) | 2000-10-13 | 2001-10-12 | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
AU2001295702A AU2001295702A1 (en) | 2000-10-13 | 2001-10-12 | Device for fast and uniform heating of a substrate with infrared radiation |
EP01976424A EP1250711B1 (fr) | 2000-10-13 | 2001-10-12 | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
JP2002535156A JP2004511907A (ja) | 2000-10-13 | 2001-10-12 | 赤外線で急速かつ均一に基板を加熱する装置 |
US10/148,339 US6759632B2 (en) | 2000-10-13 | 2001-10-12 | Device for fast and uniform heating substrate with infrared radiation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR00/13182 | 2000-10-13 | ||
FR0013182A FR2815395B1 (fr) | 2000-10-13 | 2000-10-13 | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002031862A2 true WO2002031862A2 (fr) | 2002-04-18 |
WO2002031862A3 WO2002031862A3 (fr) | 2002-07-25 |
Family
ID=8855352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2001/003171 WO2002031862A2 (fr) | 2000-10-13 | 2001-10-12 | Dispositif de chauffage rapide et uniforme d"un substrat par rayonnement infrarouge |
Country Status (11)
Country | Link |
---|---|
US (1) | US6759632B2 (fr) |
EP (1) | EP1250711B1 (fr) |
JP (1) | JP2004511907A (fr) |
KR (1) | KR100832273B1 (fr) |
CN (1) | CN1404623A (fr) |
AT (1) | ATE392710T1 (fr) |
AU (1) | AU2001295702A1 (fr) |
CA (1) | CA2394426C (fr) |
DE (1) | DE60133628T2 (fr) |
FR (1) | FR2815395B1 (fr) |
WO (1) | WO2002031862A2 (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6734457B2 (en) * | 2001-11-27 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060164614A1 (en) * | 2005-01-21 | 2006-07-27 | Hua-Kuo Chen | Exposing machine for a printed circuit board |
US20070017395A1 (en) * | 2005-07-22 | 2007-01-25 | Neri Joel D | Method and apparatus for uniformly heating a substrate |
JP2008071787A (ja) * | 2006-09-12 | 2008-03-27 | Ushio Inc | 光照射式加熱装置および光照射式加熱方法 |
US7598150B2 (en) * | 2006-11-20 | 2009-10-06 | Applied Materials, Inc. | Compensation techniques for substrate heating processes |
ITMO20060389A1 (it) * | 2006-11-22 | 2008-05-23 | Viv Int Spa | Apparati e metodo per decorare oggetti |
CA2663874A1 (fr) * | 2006-12-01 | 2008-06-12 | Teijin Fibers Limited | Procede destine a attribuer une fonction a un polymere moule et appareil destine a ceci |
US20080197493A1 (en) * | 2007-02-16 | 2008-08-21 | Stefan Geyer | Integrated circuit including conductive bumps |
US7896053B2 (en) * | 2007-09-27 | 2011-03-01 | Babcock & Wilcox Services Y-12, LLC | Non-destructive component separation using infrared radiant energy |
WO2009120859A1 (fr) * | 2008-03-26 | 2009-10-01 | Gt Solar, Inc. | Système et procédé de réacteur en polysilicium revêtu d’or |
KR101535547B1 (ko) * | 2008-09-05 | 2015-07-10 | 주성엔지니어링(주) | 기판 처리 장치 |
US8232114B2 (en) * | 2009-01-27 | 2012-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | RTP spike annealing for semiconductor substrate dopant activation |
US8404572B2 (en) * | 2009-02-13 | 2013-03-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Multi-zone temperature control for semiconductor wafer |
US20110217848A1 (en) * | 2010-03-03 | 2011-09-08 | Bergman Eric J | Photoresist removing processor and methods |
TWI399863B (zh) * | 2010-05-26 | 2013-06-21 | Inventec Solar Energy Corp | 快速升溫退火裝置及形成太陽能電池選擇性射極結構的方法 |
NL2009189A (en) | 2011-08-17 | 2013-02-19 | Asml Netherlands Bv | Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method. |
EP3514700A1 (fr) | 2013-02-20 | 2019-07-24 | Hartford Steam Boiler Inspection and Insurance Company | Système et procédé de réduction de polarisation aberrante dynamique |
EP3049869B1 (fr) | 2013-09-27 | 2017-11-08 | ASML Netherlands B.V. | Table de support pour appareil lithographique, appareil lithographique et procédé de fabrication d'un dispositif |
US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
KR101809141B1 (ko) * | 2014-05-29 | 2018-01-19 | 에이피시스템 주식회사 | 히터 블록 및 기판 열처리 장치 |
RU2580353C1 (ru) * | 2014-12-24 | 2016-04-10 | Общество с ограниченной ответственностью "Теркон-КТТ" | Способ выполнения прецизионных термических процессов в печи инфракрасного нагрева и печь инфракрасного нагрева для выполнения прецизионных термических процессов |
KR101860631B1 (ko) * | 2015-04-30 | 2018-05-23 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 및 기판 처리 방법 |
JP6687436B2 (ja) * | 2015-04-30 | 2020-04-22 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
US10727094B2 (en) * | 2016-01-29 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermal reflector device for semiconductor fabrication tool |
JP6622617B2 (ja) * | 2016-02-18 | 2019-12-18 | 株式会社Screenホールディングス | 熱処理装置 |
CN116705669B (zh) * | 2023-08-04 | 2023-10-20 | 盛吉盛半导体科技(北京)有限公司 | 一种冷却效果均匀的半导体设备用加热灯盘及冷却方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2181458A (en) * | 1985-10-07 | 1987-04-23 | Epsilon Ltd Partnership | Apparatus and method for an axially symmetric chemical vapor deposition reactor |
US5790751A (en) * | 1990-01-19 | 1998-08-04 | Applied Materials, Inc. | Rapid thermal heating apparatus including a plurality of light pipes and a pyrometer for measuring substrate temperature |
WO1999045573A2 (fr) * | 1998-03-02 | 1999-09-10 | Steag Rtp Systems Gmbh | Dispositif de traitement thermique de substrats |
WO2000030157A1 (fr) * | 1998-11-16 | 2000-05-25 | Fsi International, Inc. | Equipement de chauffe et de traitement photochimique de tranches a l'aide du rayonnement ultraviolet |
WO2000034986A1 (fr) * | 1998-12-10 | 2000-06-15 | Steag Rtp Systems, Inc. | Chambre de traitement thermique rapide permettant de traiter plusieurs plaquettes |
US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444814A (en) * | 1993-11-01 | 1995-08-22 | Hofius, Sr.; David V. | Method of infrared welding on thermoplastic parts utilizing contoured energy reflecting shields |
US5740314A (en) * | 1995-08-25 | 1998-04-14 | Edison Welding Institute | IR heating lamp array with reflectors modified by removal of segments thereof |
US5951896A (en) * | 1996-12-04 | 1999-09-14 | Micro C Technologies, Inc. | Rapid thermal processing heater technology and method of use |
KR100223549B1 (ko) * | 1996-12-28 | 1999-10-15 | 양재신 | 차량의 스페어 타이어 탈거장치 |
US6465761B2 (en) * | 2000-07-24 | 2002-10-15 | Asm America, Inc. | Heat lamps for zone heating |
-
2000
- 2000-10-13 FR FR0013182A patent/FR2815395B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-12 WO PCT/FR2001/003171 patent/WO2002031862A2/fr active IP Right Grant
- 2001-10-12 CN CN01803119A patent/CN1404623A/zh active Pending
- 2001-10-12 EP EP01976424A patent/EP1250711B1/fr not_active Expired - Lifetime
- 2001-10-12 KR KR1020027007453A patent/KR100832273B1/ko not_active IP Right Cessation
- 2001-10-12 US US10/148,339 patent/US6759632B2/en not_active Expired - Fee Related
- 2001-10-12 JP JP2002535156A patent/JP2004511907A/ja not_active Withdrawn
- 2001-10-12 DE DE60133628T patent/DE60133628T2/de not_active Expired - Lifetime
- 2001-10-12 AT AT01976424T patent/ATE392710T1/de not_active IP Right Cessation
- 2001-10-12 CA CA2394426A patent/CA2394426C/fr not_active Expired - Fee Related
- 2001-10-12 AU AU2001295702A patent/AU2001295702A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2181458A (en) * | 1985-10-07 | 1987-04-23 | Epsilon Ltd Partnership | Apparatus and method for an axially symmetric chemical vapor deposition reactor |
US5790751A (en) * | 1990-01-19 | 1998-08-04 | Applied Materials, Inc. | Rapid thermal heating apparatus including a plurality of light pipes and a pyrometer for measuring substrate temperature |
WO1999045573A2 (fr) * | 1998-03-02 | 1999-09-10 | Steag Rtp Systems Gmbh | Dispositif de traitement thermique de substrats |
US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
WO2000030157A1 (fr) * | 1998-11-16 | 2000-05-25 | Fsi International, Inc. | Equipement de chauffe et de traitement photochimique de tranches a l'aide du rayonnement ultraviolet |
WO2000034986A1 (fr) * | 1998-12-10 | 2000-06-15 | Steag Rtp Systems, Inc. | Chambre de traitement thermique rapide permettant de traiter plusieurs plaquettes |
Also Published As
Publication number | Publication date |
---|---|
US6759632B2 (en) | 2004-07-06 |
KR20020059853A (ko) | 2002-07-13 |
AU2001295702A1 (en) | 2002-04-22 |
FR2815395B1 (fr) | 2004-06-18 |
CA2394426C (fr) | 2011-09-27 |
WO2002031862A3 (fr) | 2002-07-25 |
FR2815395A1 (fr) | 2002-04-19 |
EP1250711B1 (fr) | 2008-04-16 |
DE60133628D1 (de) | 2008-05-29 |
EP1250711A2 (fr) | 2002-10-23 |
DE60133628T2 (de) | 2009-05-28 |
CN1404623A (zh) | 2003-03-19 |
JP2004511907A (ja) | 2004-04-15 |
US20040052511A1 (en) | 2004-03-18 |
ATE392710T1 (de) | 2008-05-15 |
KR100832273B1 (ko) | 2008-05-26 |
CA2394426A1 (fr) | 2002-04-18 |
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