WO2002031853A1

WO2002031853A1 - Plasma display panel, its manufacturing method, and dielectric repairing apparatus

Info

Publication number: WO2002031853A1
Application number: PCT/JP2001/008844
Authority: WO
Inventors: Taku Watanabe; Masaki Aoki; Hiroyuki Yonehara; Shinya Fujiwara; Yasuyuki Akata
Original assignee: Matsushita Electric Industrial Co., Ltd.
Priority date: 2000-10-10
Filing date: 2001-10-09
Publication date: 2002-04-18
Also published as: JPWO2002031853A1

Abstract

A plasma display panel comprising a dielectric layer substantially free of defects, its manufacturing method, and a dielectric repairing apparatus which enables the formation of the substantially defect-free dielectric layer of the plasma display panel. The dielectric repairing apparatus constituted of a panel mounting means (51), a conductive board (52), and a discharge gas introducing means (53) is provided and used to impress voltage on the dielectric layer. Thus, discharge occurs in a space part (54) to make a dielectric glass layer part surrounding a defect part carry current, so that the glass layer part is heated. As a result, the dielectric glass layer forming glass surrounding a vicinity of the defect melts down and craws into the defect. This melt solidifies thereafter to fill the defect. This results in the repair of the defect.

Description

Specification

Plasma display panel, method for manufacturing the same, and dielectric repair

Technical field

The present invention relates to a method for manufacturing a plasma display panel used for a display device or the like, and more particularly to a plasma display panel in which a dielectric glass layer is improved. Background art

In recent years, a plasma display panel, which has attracted attention as a thin display device, has, for example, a configuration shown in FIG. This plasma display panel consists of front glass substrates

1 and a rear glass substrate 120. On the front glass substrate 110, display electrodes 111, 112, a dielectric glass layer 113, and an MgO dielectric protection layer 114 are sequentially formed. On the rear glass substrate 110, an address electrode 121 and an electrode protection layer (dielectric glass layer) 122 are formed, on which a partition wall 123 is further formed. Are formed, and phosphor layers 124 are applied to the side surfaces of the partition walls 123.

Discharge gas 130 is sealed between front glass substrate 110 and rear glass substrate 120 at a predetermined pressure. The discharge gas 130 is discharged between the display electrodes 111 and 112 to generate ultraviolet rays, and the ultraviolet rays are applied to the phosphor layer 124 to display an image including a color display. Becomes possible. It should be noted that one of the substrates is actually rotated by 90 degrees, and the electrodes 111, 112 and the electrode 121 are arranged so as to cross each other.

In the front glass substrate 110, a silver electrode or a Cr—Cu—Cr electrode is used for the display electrodes 111 and 112. The dielectric glass layer 113 is formed by applying a low-melting glass paste, drying and firing. It is generally done.

The method of forming the dielectric glass layer includes screen printing and a die coating method in which a paste is poured out from a narrow slit and applied. As a glass paste for forming a dielectric, firing at a temperature about 10 ° C higher than the softening point of glass Softening point firing type or firing at a temperature about 100 ° C higher than the softening point There is a defoaming firing type. If the dielectric glass layer is formed using only the glass paste of the defoaming firing type, the glass and the display electrode react during firing of the glass paste, and the electrode material is diffused into the glass. When using glass paste, use a two-layer dielectric glass layer in which a softening point firing type first layer is formed and then a defoaming firing type dielectric glass layer is formed.

Forming a dielectric glass layer using only the softening point firing type requires only one type of glass base, so the process is more complicated than forming a two-layer dielectric glass layer as described above. It is simple and low cost can be expected.

However, when the dielectric glass layer is formed only by the softening point firing type, there is a problem that a minute defect occurs inside the dielectric glass layer and deteriorates the dielectric breakdown voltage of the dielectric. Some of these small defects are so small that they cannot be found at the magnification of an optical microscope, and it is even more difficult to identify such small defects with a large area such as a plasma display panel. It is practically impossible. Disclosure of the invention

The present invention has been made in view of the above problems, and has as its first object to provide a plasma display panel having a substantially defect-free dielectric layer and a method for manufacturing the same.

Further, it is a second object of the present invention to provide a dielectric repair device capable of manufacturing a substantially defect-free dielectric layer in a dielectric layer of a plasma display panel.

In order to achieve the first object, the present invention provides an electrode and a dielectric layer And a portion corresponding to a repaired defect in the dielectric layer.

As described above, according to the present invention, the dielectric layer of the plasma display panel has a portion corresponding to the repaired defect, and it is possible to detect bubbles, cracks, and the like existing in the layer created at the time of manufacturing the dielectric layer. Defects such as micro-clocks, which are virtually impossible, have been repaired, and a plasma display panel with a dielectric layer substantially free of defects has been realized. As a result, the dielectric strength is excellent.

Here, “defects” include relatively large defects caused by air bubbles and the like, as well as micro defects such as micro cracks, which are virtually impossible to detect. In particular, since micro defects such as micro cracks are practically impossible to detect, the present invention which can substantially eliminate them is extremely significant.

Here, the defect of the dielectric layer causes dielectric breakdown of the dielectric layer. Since the presence of a defect in the dielectric layer causes physical damage to the dielectric layer, the defect that is normally present in the dielectric layer as in the present invention has been repaired. This is extremely significant.

Here, the dielectric layer is made of low melting point glass, and the glass composition of the repaired defect corresponding portion of the dielectric layer is different from the glass composition of the non-defect corresponding portion.

The repaired portion corresponding to the defect has a different composition from the glass material of the dielectric layer as a result of the repair, and as a result of the repair, bubbles and microcracks are filled with another material. Which indicates that.

Specifically, the repaired defect portion of the dielectric layer is characterized in that the content of the electrode material is higher than other portions. This is because the electrode material sublimated to the defect portion, adhered to the periphery thereof, and then solidified, thereby closing the defect.

In order to achieve the first object, the present invention is characterized in that the method includes a step of repairing a defect after forming a dielectric layer on a substrate. As described above, according to the present invention, a plasma display panel with a restored dielectric layer can be obtained, so that a plasma display panel with excellent withstand voltage can be realized. In other words, it has a defect-free dielectric layer that repairs defects such as bubbles, cracks, and cracks that are virtually impossible to detect in the layer created when the dielectric layer was created. A plasma display panel is realized.

Further, in order to achieve the first object, the present invention provides a step of detecting a defect in a dielectric layer after forming a dielectric layer on a substrate, and at least a step of detecting a defect in the detected dielectric layer. Repairing the defect.

As described above, according to the present invention, a plasma display panel in which the dielectric layer has been repaired can be obtained, so that a plasma display panel having excellent withstand voltage can be realized. In other words, it has a defect-free dielectric layer that repairs defects such as bubbles, cracks, and cracks that are virtually impossible to detect in the layer created when the dielectric layer was created. A plasma display panel is realized.

In addition, since there is a process to detect defects before repairing the dielectric layer, at least relatively large detectable defects that have a decisive effect on the dielectric strength are detected in advance, and as a result, the defects are detected. If so, the defect is at least fixed. However, if a defect is detected, micro-cracks of small size that cannot be detected can be corrected by applying a repair process not only to the defective part but also to the entire dielectric layer, and in effect, the defect A dielectric layer is obtained.

Here, the step of repairing the defect in the dielectric layer is characterized in that the dielectric near the defect in the dielectric layer is melted and then solidified. In other words, the melted dielectric enters air bubbles, cracks, micro cracks, etc., and then solidifies to close and repair the defect.

Here, the step of repairing the defect in the dielectric layer is characterized in that the defect in the dielectric layer is irradiated with light. In other words, by irradiating light to bubbles, cracks, microcracks, etc., the dielectric material near the defect melts and enters the defect, and then solidifies. This closes and repairs the defect.

Here, the step of repairing the defect in the dielectric layer is a step of flowing a current through the dielectric layer. That is, by applying a voltage to bubbles, cracks, microcracks, and the like, the dielectric material near the defect is melted, enters the defect, and then solidifies. It is closed and repaired.

Further, in order to achieve the first object, the present invention provides a step of forming a glass dielectric layer on a substrate, and a step of detecting a defect in the dielectric layer after the formation of the dielectric layer. And applying a glass having a softening point lower than that of the glass forming the dielectric layer to at least the detected defects and firing at a temperature equal to or lower than the firing temperature at which the dielectric layer was formed. And features.

As described above, according to the present invention, a plasma display panel in which the dielectric layer has been repaired can be obtained, so that a plasma display panel having excellent withstand voltage can be realized. In other words, a defect-free dielectric layer that has repaired defects such as bubbles, cracks, and cracks that are virtually impossible to detect in the layer created when the dielectric layer was created Thus, a plasma display panel having the above is realized.

In addition, since there is a process to detect defects before the dielectric layer is repaired, at least relatively large detectable defects that have a decisive effect on the withstand voltage are detected in advance, and as a result, the defects are detected. If so, the defect is at least fixed. However, if a defect is detected, micro-cracks of a small size that cannot be detected will be corrected by applying a repair process not only to the defective part but also to the entire dielectric layer, and practically A defect-free dielectric layer is obtained.

In addition, in order to achieve the first object, the present invention provides a method in which a conductive substrate is arranged at a constant distance from a substrate on which a first dielectric layer is formed, and the substrate and the conductive substrate are A step of applying a voltage via a discharge gas therebetween, and a step of forming a second dielectric layer on the first dielectric layer after the step of applying the voltage. . As described above, according to the present invention, a plasma display panel in which the dielectric layer has been repaired can be obtained, so that a plasma display panel having excellent withstand voltage can be realized. In other words, a defect-free dielectric layer is provided in which defects such as bubbles, cracks, and micro-cracks that are virtually impossible to detect are repaired in the layer created when the dielectric layer was created. A plasma display panel is realized. This is because heating is performed by applying voltage to bubbles, cracks, microcracks, etc., and the dielectric near the defect melts and enters and solidifies, and then the defect is closed and repaired. .

Here, in the step of applying the voltage, the substrate is heated so that the temperature of the substrate is 1 ° C. or less. As a result, even smaller defects can be almost completely repaired and eliminated, and the withstand voltage can be further improved. Furthermore, in order to achieve the second object, the dielectric repair apparatus of the present invention includes a means for irradiating light to a substrate on which a dielectric layer and an electrode are formed.

As a result, the bubbles, cracks, microcracks, etc. are heated by irradiating light, and the dielectric near the defects is melted, enters the defects and solidifies, and then the defects are closed and repaired.

Further, in order to achieve the second object, the dielectric repair device of the present invention comprises: a conductive substrate disposed at a predetermined distance from a substrate on which a dielectric layer and an electrode are formed; In this configuration, a voltage is applied between the substrate and the conductive substrate via a discharge gas.

As a result, heating is performed by applying a voltage to bubbles, cracks, microcracks, and the like, and the dielectric near the defects melts and enters the defects, and is subsequently solidified to close the defects. It is repaired.

Here, it is desirable that the voltage applied between the substrate and the conductive substrate is increased to a predetermined voltage, and the voltage is decreased after the voltage is maintained at the predetermined voltage for a certain period of time. This is because if a constant voltage is applied suddenly, the dielectric layer cannot be repaired, but rather the defects may be enlarged and the dielectric layer may be physically destroyed. Here, the voltage applied between the substrate and the conductive substrate is DC, and a current limiting resistor may be connected to the conductive substrate. As a result, it is possible to easily limit the value of the current flowing through the defective portion of the dielectric layer. In other words, if excessive current flows to the defective part, the amount of heat generated will increase and the dielectric layer may be physically destroyed.Therefore, a configuration in which the amount of current flowing to the defective part is controlled by a current limiting resistor is adopted. In addition, defects can be repaired accurately without physically destroying the dielectric layer.

Here, it is desirable that the current limiting resistance is 1ΜΩ to 1ϋΩ. This is because, assuming that the breakdown voltage of the dielectric layer is about 300 V and the current is about 0.1 mA in order to restore the dielectric layer, the current is about this level.

Here, it is desirable that the applied voltage be an alternating current or a rectangular wave. This is because the alternating current increases the electric value at _three low voltages, and the rectangular wave is used to facilitate the control of the electric current value by adjusting the frequency of the rectangular wave. is there.

Here, it is desirable that the frequency of the applied voltage be in the range of 601½ to 1001: 112. .

Further, in order to achieve the second object, a dielectric repair apparatus of the present invention includes a means for detecting a defect in a dielectric layer made of glass formed on a substrate, and at least a means for detecting a defect in the detected dielectric layer. A means for applying glass having a softening point lower than that of the glass forming the dielectric layer; and a means for firing at a temperature equal to or lower than the firing temperature at which the dielectric layer was formed. I do.

As described above, according to the present invention, a plasma display panel in which the dielectric layer has been repaired can be obtained, so that a plasma display panel having excellent withstand voltage can be realized. In other words, a defect-free dielectric layer is provided in which defects such as bubbles, cracks, and cracks that are virtually impossible to detect are present in the layer created when the dielectric layer was created. A plasma display panel is realized.

Also, since it has a step of detecting a defect before repairing the dielectric layer, At least a relatively large detectable defect that has a decisive effect on the withstand voltage is detected in advance, and if a defect is detected as a result, the defect is corrected at least. However, if a defect is detected, micro-cracks of a small size that cannot be detected can be corrected by applying a repair process not only to the defective part but also to the entire dielectric layer, which is practical. Provides a defect-free dielectric layer.

Further, in order to achieve the second object, the dielectric repair device of the present invention provides a substrate on which a first dielectric layer is formed, with a conductive substrate disposed at a constant interval on the substrate, and a substrate provided with the first dielectric layer. The semiconductor device is characterized by having a means for applying a voltage between the conductive substrates via a discharge gas.

As described above, according to the present invention, a plasma display panel in which a defect is repaired by applying a current to a defective portion of the dielectric layer can be obtained, so that a plasma display panel having excellent withstand voltage can be realized. In other words, a plasma layer provided with a defect-free dielectric layer in which defects such as bubbles, cracks and micro-cracks that are practically impossible to detect are repaired in the layer created at the time of forming the dielectric layer. A display panel is realized.

Here, the above-mentioned dielectric repair apparatus is characterized by further comprising means for heating the temperature to 100 ° C. or less when the voltage is applied. As a result, even finer defects can be almost completely repaired to eliminate the defects, and the withstand voltage can be further improved.

To achieve the first object, the present invention provides a first substrate having a dielectric layer, a first electrode, and a second electrode, and a second substrate having a third electrode. A display device comprising a first substrate and a second substrate provided at a constant interval, wherein a discharge gas is provided between the first electrode, the second electrode, and the third electrode. Characterized by having a portion corresponding to a defect repaired by applying a voltage through the.

As described above, according to the present invention, the dielectric layer of the display device has a portion corresponding to the repaired defect, and it is practically possible to detect bubbles, cracks, and the like existing in the layer created at the time of manufacturing the dielectric layer. Impossible My Croc A display device having a defect-free dielectric layer in which defects such as defects are repaired has been realized. As a result, the dielectric strength is excellent.

Here, the voltage applied between the first electrode and the second electrode and the third electrode is increased to a predetermined voltage, and the voltage is decreased after maintaining the voltage at the predetermined voltage for a certain time. Is desirable. This is because if a constant voltage is applied suddenly, the dielectric layer cannot be repaired, but rather the defects may be enlarged and the dielectric layer may be physically destroyed.

Here, the voltage applied between the first and second electrodes and the third electrode is DC, and a current limiting resistor may be connected to the electrodes. . As a result, it is possible to easily limit the value of the current flowing through the defective portion of the dielectric layer. In other words, if excessive current flows to the defective part, the amount of heat generated increases, and the dielectric layer may be physically damaged.Therefore, the amount of current flowing to the defective part is controlled by the current limiting resistor. With this configuration, defects can be repaired accurately without physically destroying the dielectric layer.

Here, it is desirable that the current limiting resistor be 1ΜΩ to 1βΩ.

Here, it is desirable that the applied voltage be an alternating current or a square wave. The reason for this is to increase the current value at a low voltage by using an alternating current, and to make the rectangular wave to facilitate the control of the current value by adjusting the frequency of the rectangular wave.

Here, it is desirable that the frequency of the applied voltage be 60Ηζ to 100 KHz.

In order to achieve the first object, a plasma display panel of the present invention includes a substrate on which an electrode and a dielectric layer are formed, wherein the dielectric layer includes a first dielectric layer and the dielectric layer. It is characterized by comprising a second dielectric layer that is denser than the body layer.

As described above, in the present invention, defects such as bubbles, cracks, and micro cracks that are virtually impossible to detect exist in the first dielectric layer. Even if it is, it is denser than this so as to cover it.Because it has a second dielectric layer, it has virtually no defects and a plasma diode with excellent withstand voltage A spray panel is obtained.

Note that “dense” means that the number of bubbles, cracks, microcracks, and the like is small and the dielectric material is densely arranged. Here, the second dielectric layer is electrically It can be made of an insulating polymer.

Here, the second dielectric layer may be a polymer having a silicon-silicon bond.

Here, the second dielectric layer can be made of a silicone containing a siloxane bond or a polymer thereof.

Further, in order to achieve the first object, a plasma display panel of the present invention has a substrate on which an electrode, a dielectric layer, and a dielectric protection layer are formed. It is characterized by comprising a first dielectric layer and a second dielectric layer which is denser than the first dielectric layer and is provided in the first dielectric layer.

As described above, according to the present invention, even if defects such as bubbles, cracks, and microcracks that are practically impossible to detect exist in the first dielectric layer, the defects are included in the first dielectric layer. Since the second dielectric layer is more dense, defects when formed continuously in the thickness direction of the dielectric layer are divided and the depth thereof is reduced. As a result, the amount of current flowing to the defect at the time of discharge is reduced, and a plasma display panel having excellent withstand voltage is obtained.

In order to achieve the first object, a method of manufacturing a plasma display panel according to the present invention includes a step of forming an electrode on a substrate, and forming at least a first dielectric layer on the electrode. A step of forming a denser second dielectric layer on the first dielectric layer; and, after forming the second dielectric layer, sintering the substrate in an oxygen atmosphere. And forming a dielectric protection layer on the second dielectric layer.

Thus, the plasma display panel obtained by the present invention In this case, even if defects such as air bubbles, cracks, and micro cracks that are practically impossible to detect exist in the first dielectric layer, it is necessary to cover the first dielectric layer. Since the second dielectric layer is more dense, defects can be substantially eliminated, and a plasma display panel having excellent withstand voltage can be obtained.

Here, the second dielectric layer can be an electrically insulating polymer.

Here, the electrically insulating polymer can be a polymer having a silicon-silicon covalent bond as a main chain.

Here, the electrically insulating polymer can be a silicone containing a siloxane bond or a copolymer thereof. '

In order to achieve the first object, a method of manufacturing a plasma display panel according to the present invention includes a step of forming an electrode on a substrate, and forming at least a first dielectric layer on the electrode. A step of forming a denser second dielectric layer on the first dielectric layer; and, after forming the second dielectric layer, sintering the substrate in an oxygen atmosphere. And forming a first dielectric layer on the second dielectric layer.

As described above, in the plasma display panel obtained by the present invention, defects such as bubbles, cracks, and micro-clocks that are practically impossible to detect exist in the first dielectric layer. Even if the second dielectric layer, which is denser than the second dielectric layer, is provided, the defects formed when the dielectric layer is formed continuously in the thickness direction of the dielectric layer are separated and the depth is reduced. It will be shallower. As a result, the amount of current flowing to the defect at the time of discharge is reduced, and a plasma display panel having excellent withstand voltage is obtained.

Here, the second dielectric layer can be an electrically insulating polymer.

Here, the electrically insulating polymer is a polymer containing a siloxane bond. It can be silicon or its copolymer. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a perspective view of a main part of an AC surface discharge type plasma display panel according to a first embodiment of the present invention.

FIG. 2 is a vertical sectional view including the line X—X in FIG. 1.

FIG. 3 is a vertical sectional view including the line Y-Y of FIG.

FIG. 4 is a block diagram showing a drive circuit configuration for driving the PDP.

FIG. 5 is a plan view showing the configuration of an apparatus for repairing a defect remaining in the dielectric glass layer (dielectric repair apparatus).

Fig. 6: Examples of film defects of the dielectric glass layer. Fig. 6 (a) shows the case of the conventional case, and Fig. 6 (b) shows the case of the embodiment.

Fig. 7 is a plan view showing the configuration of a device (dielectric repair device) that repairs defects remaining in the dielectric glass layer by light irradiation.

Fig. 8 is a plan view showing the configuration of a device (dielectric repair device) that repairs defects remaining in the dielectric glass layer by coating with glass.

FIG. 9 is a plan view showing a configuration of a plasma display panel according to a third embodiment of the present invention.

FIG. 10 is a plan view showing a configuration of a plasma display panel according to a third embodiment of the present invention.

FIG. 11 is a plan view showing a configuration of a plasma display panel according to a conventional example. BEST MODE FOR CARRYING OUT THE INVENTION

The configuration of a plasma display panel (hereinafter, referred to as “PDP”) and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to the drawings. The following embodiments are merely examples of the present invention, and needless to say, those having similar functions and effects are included in the scope of the technical idea of the present invention.

[Embodiment 1] FIG. 1 is a perspective view of a main part of an AC surface discharge type PDP according to the present embodiment. FIG. 2 is a vertical cross-sectional view including the X-X line of FIG. 1, and FIG. FIG. Note that although only three cells are shown in these figures for convenience, the PDP is actually composed of a large number of cells that emit red (R), green (G), and blue (B). Has been done.

This PDP generates a discharge inside the panel by applying a pulsed voltage to each electrode, and the visible light of each color generated on the rear panel PA2 side with the discharge is applied to the main surface of the front panel PA1. This is an AC surface discharge type PDP that allows light to pass through.

The front panel PA 1 has a dielectric glass layer 13 formed on a front glass substrate 11 on which display electrodes 12 are arranged in a strip shape so as to cover the display electrodes 12. Further, a protective layer 14 is formed so as to cover the dielectric glass layer 13. The display electrode 12 is composed of a transparent electrode 12a formed on the surface of the glass substrate 11 and a metal electrode 12b formed on the transparent electrode 12a.

On the other hand, the rear panel PA 2 protects the address electrodes 22 on the rear glass substrate 21 on which the address electrodes 22 are arranged in a strip shape so as to cover the address electrodes 22. Electrode protective layer 23 that acts to reflect visible light to the front panel side as well as accumulates charge on the film surface during actual driving. Is formed, and extends in the same direction as the address electrode 22 on the electrode protection layer 23, and a partition wall 24 is erected so as to sandwich the address electrode 22. Further, a phosphor layer 25 is arranged between the partition walls 24.

Here, the “dielectric layer” covering each electrode surface is electrically insulative and has a function of accumulating wall charges on its surface. Generally, glass is used as described above.

Next, an outline of a method of manufacturing the PDP having the above configuration will be described.

Preparation of front panel P A 1:

The front panel PA 1 is mounted on the surface of the front glass substrate 11 by a known method. The display electrode 12 is formed in a strip shape by a chemical vapor deposition method or a photolithographic method, and then a dielectric glass layer 13 is formed using glass so as to cover the display electrode 12. It is formed by forming a protective layer 14 made of magnesium oxide (MgO) on the surface of the dielectric glass layer 13 by an electron beam evaporation method.

Preparation of rear panel P A 2:

First, an address electrode 22 is formed on the surface of the rear glass substrate 21 by a photolithographic method. This address electrode is composed of only a metal electrode.

Then, an electrode protection layer 23 is formed so as to cover the address electrodes 22 in the same manner as in the case of the front panel PA 1.

Next, a glass partition wall 24 is provided on the electrode protection layer 23 with a predetermined pitch.

Then, a phosphor layer 25 is formed by disposing a red (R) phosphor, a green (G) phosphor, and a blue (B) phosphor in each space sandwiched by the partition walls 24. I do. As the phosphor of each color R, G, B, the phosphor generally used for PDP can be used. Here, the following phosphor is used.

Red phosphor (Y _X G d (Bok _{_{x)) B 0 3: E}} u

Green phosphor _{_{Z n 2 S i O 4:}} M n

Blue phosphor B a M g A 1 ₁₀ O ₁₇ : E u ²⁺

Or

Completion of PDP by bonding front panel and rear panel: Next, position the front panel PA1 and the rear panel PA2 so that the display electrode 12 and the address electrode 22 are orthogonal to each other, and bond both panels. You. Thereafter, a discharge gas (for example, a He—Xe system or a Ne—Xe system inert gas) is sealed in a discharge space 30 partitioned by the partition wall 24 at a predetermined pressure to complete the PDP.

The composition of the discharge gas to be filled is the He-Xe system, Ne-Xe system, etc., which have been used in the past. , The content of X e and 5% by volume or more, setting the gas pressure to ^{0. 6 7 x 1 0 5 ~} 1. 0 1 XI 0 5 P a.

The PDP having the above configuration is driven using the drive circuit shown in FIG. An address electrode 22 is connected to the address electrode driving section 31, and a scanning electrode of the display electrode 12 is connected to the scanning electrode driving section 32, and to a sustain electrode driving section 33. Is connected to the electrode on the maintenance side of the display electrode 12. Then, such a drive circuit uniformly accumulates wall charges in all cells in the PDP in order to easily cause discharge during the setup period. Next, write / discharge of cells to be lit during the address period is performed. Further, the cells written in the address period are turned on in the sustain period to maintain the lighting, and the cell charges are stopped by erasing the wall charges in the erase period. These multiple operations are repeatedly performed, and an image of one TV field is displayed.

* About the structure and forming method of the dielectric glass layer

First, the dielectric glass layer is disposed on both the front panel and the rear panel as described above. However, the structure is the same as that of the dense structure in which defects are repaired.

(About structure)

The dielectric glass layer 13 (23) is composed of a first dielectric glass layer 13a (23a) covering the electrode surface and a second dielectric glass layer (23b) covering this surface. ).

(About the formation of the first dielectric glass layer)

The first dielectric glass layer 13a (23a) was formed through a defect repairing step after the glass material was melted and solidified. This results in a dense membrane structure with virtually no defects (bubbles, cracks, microcracks).

Hereinafter, a method for forming the first dielectric glass layer 13a (23a) will be specifically described.

That is, the first dielectric glass layer is formed through the following steps. First, a dielectric material containing the glass material, the binder, and the solvent constituting the first dielectric glass layer is applied to form an electrode (coating process), the solvent is dried, and then the ink is applied. Heat at a temperature at which the contained binder disappears and the glass material melts. After that, the molten glass is solidified by cooling to form the first dielectric glass layer before the defect is repaired (firing step).

The coating step is performed by a screen printing method, a die coating method, a spin coating method, a spray coating method, or a blade coating method. To apply ink.

As the glass to be included in the ink, for example, when a glass composed of the components Gl, G2, G3, ..., GN is used, the components Gl, G2, G3, *, GN Was weighed at a ratio corresponding to the component ratio, and this was heated and melted in a furnace at, for example, 130 ° C., and then poured into water. 0— B ₂ 0 ₃ — S i 0 ₂ -C a 0 glass, P b O— B ₂ O ₃ — S i 0 ₂ — Mg O glass, P b O — B ₂ O ₃ — S i 0 ₂ _ B a O glass, P b O— B ₂ 0 ₃ — S i O ₂ — M g M _A l ₂ 〇 ₃ glass, P b O— B ₂ O ₃ _ S i 0 ₂ — B a O - A 1 ₂ 0 ₃ based _{_{glass, P b O- B 2 0 3}} - S i 0 2 - C a O - A 1 2 O 3 based _{_{glass, B i 2 O 3 - Z}} n O- B 2 0 3 - S i0 ₂ — C a O-based glass, Z n O — B ₂ O ₃ — S iO ₂ — Al ₂ O ₃ — C a O-based glass, P ₂ O ₅ — Z n O-A 1 ₂ O ₃ — C a O-based glass, N b ₂ O ₅ —Zn O—B ₂ O ₃ _S i O ₂ —C a O-based glass A single substance or a mixture thereof can be used. In addition, glass generally used for the dielectric of the PDP can be used in the same manner. The dielectric glass layer provided on the back panel may be mixed with titanium oxide or the like to increase the light reflectance and increase the amount of light transmitted through the front panel.

The firing step is performed by a softening point firing method in which heating is performed at a temperature about 10 ° C higher than the softening point of the glass. This suppresses the reaction between the dielectric glass and the electrode material during high-temperature heating, and makes it possible to reduce the number of bubbles generated by this reaction. Next, defects remaining in the first dielectric glass layer are detected. Here, if there is no defect, there is no need to go through the next defect repair process. Specifically, the defect is detected by a known image processing method. Briefly explaining this, the first panel of the first dielectric glass layer before the defect repair (the panel in the description of the repair process is the front panel and the rear panel). The surface of the first dielectric glass layer is irradiated with light, and the light and shade information of the image of the first dielectric glass layer is obtained from the reflected light and transmitted light. Then, a defective portion is extracted from the grayscale information.

The defect extracted in this way is considered to be such that micro defects are not actually detected in the so-called micro cracks, but other defects (bubbles or large cracks) ) Is reliably detected.

After detecting such a defect, the process proceeds to the next repairing step so as to repair at least the detected defective portion. Here, as described above, there are defects that are considered undetectable even by the above method, so repairing only the detected ones will not repair such undetectable defects It may remain as it is, which may lead to a decrease in withstand voltage. Therefore, it is a matter of course that at least the detected defect is repaired, but the fact that the defect is detected means that there is a high possibility that undetectable defects such as cracks and cracks remain. Therefore, it is needless to say that it is desirable to perform the repair process on the entire first dielectric glass layer.

Next, the processing in the defect repairing step will be specifically described. Defect repair by applying water voltage

FIG. 5 is a plan view showing a configuration of an apparatus (dielectric repairing apparatus) for repairing a defect remaining in the dielectric glass layer. As shown in this figure, the dielectric repair device 50 is composed of a panel mounting means 51, a conductive substrate 52, and a discharge gas introducing means 53.

The panel mounting means 51 is an insulating spacer disposed on the outer peripheral portion of the surface of the conductive substrate 52. The size of the conductive substrate 52 is It has an area equivalent to that of a metal alloy and is made of aluminum alloy or SUS.

The panel Pa is placed on the panel placing means 51 such that the surface of the first dielectric glass layer faces the conductive substrate 52, and the panel and a certain gap Ga are secured. Then, the discharge gas 55 is introduced from the discharge gas introduction means 53 into a space 54 formed between the panel and the conductive substrate 52. In the conductive substrate 52, gas introduction through holes 56 are formed at one or more locations in the thickness direction (one in the figure). Will be introduced. By introducing the discharge gas in this manner, the panel Pa is slightly lifted by the discharge gas 55 to eliminate the deflection caused by the weight of the panel Pa, and the conductive base is formed even in the portion where the deflection is considered to be large at the center of the panel. A plate and a certain gap G a can be secured.

As the discharge gas 55, one or a mixture of Ne and Ne and one or more of He, Xe, which is a gas used for the discharge, can be used (for example, an amount equivalent to 1.11.5 L). Introduction). The introduction of such a rare gas causes neon light emission, and a defective portion is specified. In addition, since the gas is a rare gas, the discharge voltage is lower than that of air, and the amount of current flowing through the dielectric glass layer by the discharge can be reduced. Furthermore, the introduction of the cleaning gas makes it possible to reduce the discharge starting voltage as compared with the case where no discharge gas is applied, and to reduce the amount of current flowing through the dielectric glass layer by the discharge. it can. As will be described later, it is desirable that the current flowing through the dielectric glass layer be as small as possible as long as the defect can be repaired.

Next, a power supply unit 57 is attached to the conductive substrate 52 and the panel Pa via electrodes (display electrodes and address electrodes) formed in advance on the panel, and a voltage is applied to the dielectric through the discharge gas. Is applied. As the power supply unit 57, a unit that can arbitrarily change an applied voltage amount, an applied voltage frequency, and a voltage waveform is used.

Here, the energy at the time of dielectric breakdown (when the dielectric glass layer is physically destroyed) depends on the current I at the time of breakdown, the voltage V, and the application time t. Then, the equation is given by Ql = IxVxt.

The amount of heat given to the dielectric is given by the following equation: specific heat / 0, mass w of the heat-receiving part, and temperature rise Δt; Q 2 = pxwx At.

Then, at the time of dielectric breakdown, since Q1 = Q2, IxVxt = pxwxAt is satisfied, and therefore, Δΐ = (IXVt) / (pxw) is derived.

Considering the dielectric breakdown from the viewpoint of the amount of energy applied to the dielectric glass layer, if Δt, which causes the dielectric breakdown, increases, the broken part becomes too large to melt, and conversely, the breakdown energy is controlled. It can be seen that when Δt is reduced, the fracture site resolidifies and self-heals. Then, if Δt is specified for self-healing, it can be seen that the values of I, V, and t need to be specified small.

In order to reduce I, at least a high resistance is inserted in series between the conductive substrate and the power supply or between the dielectric and the power supply. As the high resistance, 1ΜΩ to 1 GΩ may be used. To reduce V, apply a high-frequency voltage. Since the breakdown voltage decreases as the frequency increases, At can be reduced. Specifically, it is desirable to apply a voltage with a frequency of 60 Hz to the actual driving level (several Ι Ο ΚΗ ΚΗ ζ), and in particular, a voltage with a frequency of Ι Ο Ο ΚΗ ζ. desirable.

To reduce t, a rectangular (pulse) voltage is applied. If the maintenance time (voltage application time) t is too long, it may lead to destruction. Therefore, it is desirable to be about 1 s to 1 s.

The following describes the measured values of I, V, t, p, w, and Δt in the defect repair process by applying a voltage.

I = ~ 0. 1 m A, V = 25 0 ~ 300 V, t = 1 ms io = ~ 1 0 0 J / K / / g, w = 40 xl 0_ 1 8 g, Δ t = 6 0 0~ 1 000 K

By applying a voltage to the first dielectric glass layer as described above, a discharge occurs in the space portion 54, and a current flows through the dielectric glass layer portion surrounding the defect portion to be heated. Result Around the defect The dielectric glass layer forming glass melts and enters the defect, and then solidifies, thereby filling the defect. As a result, the defect is repaired. Here, since the portion where the defect was repaired cannot be said to be a defect thereafter, the defect portion that has been repaired in order to clarify the correspondence with the defect is referred to as “the portion corresponding to the repaired defect”.

As described above, the glass composition at the portion corresponding to the repaired defect in the first dielectric glass layer is different from the glass composition at the portion not corresponding to the defect. This is because the repaired portion has a different composition from the glass material of the first dielectric glass layer as a result of the repair. Indicates that other materials can be supplemented. Specifically, the portion corresponding to the repaired defect in the dielectric glass layer has a higher content of the electrode material than other portions. This is because the electrode material sublimated to the defect portion and adhered to the periphery thereof, and then solidified, thereby closing the defect.

FIG. 6 is an example of a film defect of the dielectric glass layer. In the above method, when the energy applied to the dielectric glass layer is small, the defect is self-repaired, and when the energy is large, the defect is not self-repaired but is destroyed. Figure 6 shows a comparison of the surface of the part where self-repair and the part where self-repair was not performed. If self-healing was not performed, cracks would enter the dielectric and glass substrate due to excessive destructive energy (Fig. 6 (a)). This crack is considered to be the result of excessive heat applied at the time of failure. On the other hand, in the case of self-repair, as shown in Fig. 6 (b), it has a part corresponding to the repaired defect, and it is smaller than the case where self-repair did not occur, although cracks entered by the applied energy. there were. This is because the applied energy was small.

Here, in the above-described dielectric repair apparatus, means for heating the temperature to 100 ° C. or less at the time of applying the voltage may be provided. As a result, even smaller defects can be almost completely repaired to eliminate the defects, and the withstand voltage can be further improved.

Two Defect repair by water light irradiation

Next, a method of repairing the defect by irradiating the surface of the first dielectric glass layer with light will be described.

FIG. 7 is a plan view showing the configuration of a device (dielectric repair device) for repairing defects remaining in the dielectric glass layer by light irradiation. As shown in this figure, the dielectric repair device 70 includes a panel mounting means 71 and a light irradiation means 72.

The panel mounting means 71 includes a member for fixing the panel on which the first dielectric glass layer before the defect repair is formed, with the first dielectric glass layer facing upward.

As the light irradiation means 72, a YAG laser or a carbon dioxide laser can be used.

The repair of the defect remaining in the dielectric using the dielectric repair device 70 having such a configuration is performed as follows. That is, by uniformly scanning the entire surface of the first dielectric glass layer with the laser beam or selectively scanning the defect portion, the glass around the defect near the defect melts and enters the defect. After that, solidification fills the defect. As a result, the defect is repaired.

Thus, the glass composition of the portion corresponding to the repaired defect in the first dielectric glass layer is different from the glass composition of the portion other than the portion corresponding to the defect as described above. This is because the repaired portion corresponding to the defect has a different composition from the glass material of the first dielectric glass layer as a result of the repair, and as a result of the repair, air bubbles and microcracks are different. It is shown that the material is also supplemented. Specifically, the portion corresponding to the repaired defect in the dielectric glass layer has a larger content of the electrode material than other portions. This is because the electrode material sublimated to the defect portion, adhered to the periphery thereof, and then solidified to close the defect.

Repairing defects by applying water glass · Next, a method of repairing defects by applying glass to the first dielectric glass layer will be described. FIG. 8 is a plan view showing the configuration of a device (dielectric repair device) for repairing defects remaining in the dielectric glass layer by applying glass. As shown in this figure, the dielectric restoration device 80 includes a panel mounting means 81, a glass coating means 82, and a firing furnace 83.

The panel mounting means 81 includes a member for fixing the panel on which the first dielectric glass layer before the defect repair has been formed, with the first dielectric glass layer facing upward.

The glass applying means 82 may be any of a brush-like or nozzle-like thing which can be applied to the entire surface of the first dielectric glass layer, and selectively applies glass to the defective portion. It may be a thin tip to be applied. Here, the glass to be applied is stored in an ink tank (not shown) in a mixed state with a binder and a solvent, and is supplied to an appropriate application portion (not shown) by a pump or the like. . The glass used has a lower softening point than that of the glass constituting the first dielectric glass layer.

It is desirable to perform firing at a temperature equal to or lower than the firing temperature of the first dielectric glass layer. This is to prevent re-melting of the first dielectric glass layer. In addition, in order to lower the softening point, a material having an increased content of lead oxide is generally used.

After the glass is applied to the defect, the entire panel is fired in firing furnace 83 to complete the repair.

As a result, the glass applied to the defect is melted and solidified to close the defect and the defect is filled with glass.

(About the formation of the second dielectric glass layer)

After forming the first dielectric glass layer 13a (23a) substantially free of defects as described above, the surface thereof is changed to the second dielectric glass layer 13b (23b). ).

This second dielectric glass layer 13 b (23 b) is to overcoat the first dielectric glass layer 13 a (3 a) in which the defect has already been repaired. This is for making the entire dielectric glass layer denser without defects. [Embodiment 2]

In the description section of the above embodiment, a method of repairing a defect remaining in the dielectric glass layer before assembling the panel has been described.Here, after forming each part of the panel by the same general method as before, The feature is that the panel is assembled, and then a process is performed to repair defects remaining in the dielectric glass layer. Specifically, an address electrode performs the same function as the conductive substrate, and a voltage is applied between the display electrode and the address electrode in the same manner as described above.

First, a power supply is attached to the panel (after assembly), and a voltage is applied to the dielectric through the discharge gas. Use a power supply that can change the applied voltage, applied voltage frequency, and voltage waveform arbitrarily.

The energy at the time of dielectric breakdown (when the dielectric glass layer is physically destroyed) is given by the following formula; Ql = I x V xt for the current I at the time of breakdown, the voltage V, and the application time t. Given.

The amount of heat given to the dielectric is given by the following formula: specific heat p, mass w of the heat-receiving part, and temperature rise Δt; Q 2 = pXwxAt.

At the time of dielectric breakdown, since Q 1 = Q 2, I x V xt = p x w x Δt holds, and therefore, At-(I X V X t) / (p x w) is derived.

Here, considering the amount of energy applied to the dielectric glass layer and the dielectric breakdown, the At, which causes the dielectric breakdown, is large, and the fracture location becomes too large to melt, and conversely, the breakdown energy is controlled. It can be seen that when Δt is reduced, the fracture site resolidifies and self-heals. Then, if At is specified for self-healing, it is clear that I, V, and t should be specified to be small.

In order to reduce I, a high resistance should be at least inserted in series between the conductive substrate and the power supply or between the dielectric and the power supply. A high resistance of 1 MΩ to 1 GΩ may be used. To reduce V, apply a high-frequency voltage. Since the breakdown voltage decreases as the frequency increases, Δt can be reduced. Specifically, 60 Hz ~ It is desirable to apply a voltage having a frequency of the actual drive level (several l OOKH z.), And it is particularly desirable to apply a voltage having a frequency of l OOKH z.

To make t smaller, a rectangular (pulse) voltage is applied. If the maintenance time (voltage application time) t is too long, it may lead to destruction, so it is desirable to be about 1 s to 1 s.

I = ~ 0. l mA, V = 2 5 0~ 3 0 0 V, t = 1 msp 1 OOJ / K / g, w = 4 0 xl 0- 1 8 g, Δ t = 6 0 0 ~ 1 0 0 0 K

By heating the dielectric glass layer to about 100 ° C. at the time of applying a voltage, the defect can be repaired more reliably and at a lower current.

By applying a voltage to the first dielectric glass layer as described above, the dielectric glass layer forming glass around the defect melts and enters the defect, and then solidifies and fills the defect. And. As a result, the defect is repaired.

As described above, the glass composition of the portion corresponding to the repaired defect in the first dielectric glass layer is different from the glass composition of the portion not corresponding to the defect. This is because, as a result of the repair, the portion corresponding to the defect thus repaired has a different composition from the glass material of the first dielectric glass layer, and as a result of the repair, bubbles and micro cracks are formed. This indicates that the cut portion can be supplemented with other materials. Specifically, the portion corresponding to the repaired defect in the dielectric glass layer has a higher content of the electrode material than other portions. This is due to the fact that the electrode material sublimated to the defect and adhered to its surroundings, then solidified and closed the defect.

[Embodiment 3]

The configuration of the PDP in this embodiment is the same as that of the above-described embodiment except that the configuration of the dielectric glass and the forming method thereof are different. Therefore, the following description focuses on the differences.

FIGS. 9 and 10 are plan views showing a configuration of a PDP according to the third embodiment of the present invention.

As shown in FIG. 9, the dielectric glass layer 43 and the electrode protection layer 53 in the present PDP are formed between the first dielectric glass layer 43a (53a) and the second denser glass layer. The dielectric glass layer 43b (53b) is interposed.

Alternatively, as shown in FIG. 10, the dielectric glass layer 43 and the electrode protection layer 53 in the present PDP are more densely formed on the surface of the first dielectric glass layer 43a (53a). The structure is such that the second dielectric glass layer 43b (53b) is covered.

By forming such a structure in which dielectric glasses of different densities are laminated, defects such as air bubbles, cracks, and micro cracks that are practically impossible to detect are eliminated by the first dielectric. Even if it is present in the body glass layer 43a (53a), the second dielectric glass layer 43b (53b), which is denser than this, is covered so as to cover it. As a result, a defect is substantially eliminated, and a plasma display panel having excellent withstand voltage can be obtained.

* About the method of forming the dielectric glass layer 4 3 (5 3)

Hereinafter, a method of forming the first dielectric glass layer 43a (53) will be specifically described.

First, after a glass material and a binder constituting the first dielectric glass layer 43a (53a) and a dielectric ink containing a solvent are applied to form an electrode (application step), the solvent is applied. After drying, the binder is heated at a temperature at which the binder contained in the ink disappears and the glass material melts. Thereafter, the first dielectric glass layer is formed by solidifying the molten glass by cooling (firing step). In the applying step, ink is applied by printing on a substrate surface by a screen printing method, a die coating method, a spin coating method, a spray coating method, or a blade coating method. .

Examples of glass to be included in ink include components Gl, G2, and G When using glass consisting of 3, GN, GN, the components Gl, G2, G3, *, GN are weighed at a ratio corresponding to the component ratio. ° heated and melted in a furnace and C, which have been obtained by introducing into water then _{_{specifically, P b 0- B 2 0 3}} - S i 0 2 - C a O -based glass, P b O— B ₂ 0 ₃ — S i 0 ₂ —Mg O-based glass, P b O -B ₂ O ₃ -S i O ₂ — B a O-based glass, P b O—B ₂ 0 ₃ — S i _{0 2 - M g O- A 1} 2 0 3 based _{_{glass, P b O- B 2 O 3}} - S i 0 2 - B a O- A 1 2 0 3 system glass, P b O- B ₂ O ₃ — S i 〇 ₂ — C a〇1 A l ₂ 〇 ₃ glass, B i ₂ O ₃ — Z n〇 1 B ₂ O ₃ — S iO ₂ — C a O glass, Z n O— B ₂ _{_{0 3 - S i 0 2 -}} A 1 2 0 3 - C a O -based _{_{glass, P 2 O 5 - Z n}} O - A 1 2 〇 ₃ - C A_〇 _{_{glass, n b 2 O 5 - Z}} n O — B ₂ O ₃ — Sio ₂ -Ca〇-based glass alone or a mixture thereof can be used. In addition, glass generally used for the dielectric of the PDP can be used in the same manner. The dielectric glass layer provided on the back panel may be mixed with titanium oxide or the like to increase the light reflectance and increase the amount of light transmitted through the front panel.

The firing process is performed by a softening point firing type method in which the glass is heated at a temperature about 1 ° C. higher than the softening point of the glass. As a result, the reaction between the dielectric glass and the electrode material during high-temperature heating is suppressed, and the number of bubbles generated by this reaction can be reduced.

The method of forming the first dielectric glass layer is the same for both the upper layer and the lower layer when the second dielectric glass layer is interposed in the first dielectric glass layer.

Next, a method of forming the second dielectric glass layer 43b (53b) will be described.

As described above, the first dielectric glass layer 43a (53a) can be formed by a thick film technique using an ordinary glass material generally used conventionally. On the other hand, it is desirable that the second dielectric glass layer 43b (53b) be thinner than the first dielectric glass layer 43a (53a). This means that if a material to which thin film deposition technology can be applied is used, the overall thickness of the dielectric glass layer will change significantly. In other words, the dielectric constant of the dielectric glass layer and the capacitance of the capacitor do not change.

Technologies that respond to such demands include a method of forming a SiO ₂ film by a vapor deposition method such as a CVD method, and a method of forming a polysilicon film (specifically, a polydimethylsilicon film). Li, such as Ren of thin film) a key catcher stearyl I packaging method, with the spray coating method, Lee Nkujiwe Tsu after RiNarumaku due to such method, a like technique to convert this to electrical insulating properties of the S i 0 ₂ film There is.

The latter technique is described in detail here. Polysilicon films have the properties of p-type semiconductors, in which delocalized Si-Si bond conjugates and electrons in the main chain become charge carriers by doping an anion. . Here, if it changes chemically by the action of oxygen or the like, it loses conductivity. This is because the Si—Si bond of the poly- silicon is decomposed to siloxane-bonded silanol. Silanol is unstable and changes to a siloxane bond.

Polysilicon, which has siloxane bonds, has a molecular structure with siloxane bonds similar to polydimethylsiloxane bonds, etc., and has the same high insulation properties, high chemical stability, and high heat resistance as silicone resins. Shows sex. In this way, even if the polysilicon has some conductivity at the beginning, it is insulated by the action of oxygen and the like. .

The second dielectric glass layer 43b (53b) made of a polysilicon film having a siloxane bond formed in this manner further has a temperature of 300 ° C to 400 ° C. By baking at a temperature of about C, the number of siloxane bonds can be further increased, so that the electrical insulation can be improved.

'And, as the oxygen content in the atmosphere at the time of firing increases, the number of siloxane bonds can be further increased, so that the electrical insulation can be further improved.

Note that the above-described method is common to both cases of interposing in the first dielectric glass layer and covering the surface of the first dielectric glass layer.

By the way, in the panel manufactured by the above manufacturing method, the display electrode and When a pulse voltage of 10 to 20 s and a height of 400 V was applied between the address electrodes and the state of the dielectric breakdown was observed, no dielectric breakdown was found. Industrial applicability

INDUSTRIAL APPLICABILITY The present invention has extremely high industrial applicability as a high-quality PDP having substantially no defects remaining in the dielectric glass layer.

Claims

The scope of the claims

1. A plasma display comprising a substrate having electrodes and a dielectric layer formed thereon, wherein the dielectric layer has a portion corresponding to a repaired defect. Flannel.

2. The plasma display device according to claim 1, wherein the defect in the dielectric layer causes dielectric breakdown of the dielectric layer. Flannel.

3. The method according to claim 1, wherein the dielectric layer is made of glass, and a glass composition of a portion corresponding to the repaired defect in the dielectric layer is different from a glass composition of a portion not corresponding to the defect. The plasma display panel as described.

4. The plasma display panel according to claim 1, wherein a portion corresponding to the repaired defect in the dielectric layer has a higher content of an electrode material than other portions.

5. A method for manufacturing a plasma display panel, comprising a step of repairing a defect after forming a dielectric layer on a substrate.

6. A plasma display panel comprising a step of detecting a defect in the dielectric layer after forming the dielectric layer on the substrate, and at least a step of repairing the detected defect in the dielectric layer. Manufacturing method.

7. The method according to claim 5, wherein the step of repairing the defect in the dielectric layer comprises melting and solidifying the dielectric near the defect in the dielectric layer. Spray panel manufacturing method.

8. The step of repairing the defect in the dielectric layer includes the step of repairing the defect in the dielectric layer. 7. The method for producing a plasma display panel according to claim 5, wherein light is applied to the panel.

9. The method for manufacturing a plasma display panel according to claim 5, wherein the step of repairing the defect in the dielectric layer is a step of flowing a current to the dielectric layer.

10. A step of forming a dielectric layer made of glass on a substrate; a step of detecting a defect in the dielectric layer after the formation of the dielectric layer; and forming the dielectric layer at least on the detected defect. Applying a glass having a softening point lower than that of the glass to be fired, and firing at a temperature equal to or lower than the firing temperature at which the dielectric layer was formed.

11. A step of arranging a conductive substrate at a predetermined interval from the substrate on which the first dielectric layer is formed and applying a voltage between the substrate and the conductive substrate via a discharge gas; Forming a second dielectric layer on the first dielectric layer after the step of applying a voltage.

12. The method of manufacturing a plasma display panel according to claim 11, wherein in the step of applying the voltage, the substrate is heated so that the temperature of the substrate is 100 ° C. or lower.

1 3. A dielectric restoration device including a means for irradiating light to a substrate on which a dielectric layer and electrodes are formed.

14. A conductive substrate is arranged at a certain distance from the substrate on which the dielectric layer and the electrodes are formed, and a voltage is applied between the substrate and the conductive substrate via a discharge gas. Dielectric restoration device configured.

15. The method according to claim 14, wherein a voltage applied between the substrate and the conductive substrate is increased to a predetermined voltage, and the voltage value is decreased after maintaining the voltage at the predetermined voltage for a predetermined time. Dielectric restoration device.

1 6. A voltage applied between the substrate and the conductive substrate is a direct current, and a current limiting resistor is connected to the conductive substrate. Item 14. The dielectric repair device according to Item 1.

17. The dielectric repair apparatus according to claim 16, wherein the current limiting resistance is 1Μ to 1ΘΩ.

15. The dielectric repair apparatus according to claim 14, wherein the applied voltage is an alternating current or a rectangular wave.

19. The dielectric repair apparatus according to claim 18, wherein the frequency of the applied voltage is 60 ある to 100 KHz.

20. Means for detecting a defect in the dielectric layer made of glass formed on the substrate, and means for applying at least the detected defect to glass having a softening point lower than that of the glass forming the dielectric layer And a means for firing at a temperature equal to or lower than the firing temperature at which the dielectric layer was formed.

2 1. There is a means for disposing a conductive substrate at a predetermined interval on the substrate on which the first dielectric layer is formed, and for applying a voltage between the substrate and the conductive substrate via a discharge gas. A dielectric restoration device characterized by the following.

22. The dielectric repair device according to claim 21, further comprising means for heating the temperature to 100 ° C. or less at the time of applying the voltage.

2 3. A first substrate having a dielectric layer, a first electrode and a second electrode, and a third electrode

A display device comprising: a second substrate having: a first substrate and a second substrate provided at regular intervals; and

A display device having a portion corresponding to a defect repaired by applying a voltage between the first electrode, the second electrode, and the third electrode via a discharge gas.

2 4. The voltage applied between the first electrode and the second electrode and the third electrode is increased to a predetermined voltage, and is maintained at the predetermined voltage for a predetermined time, and then the voltage value is reduced. The display device according to claim 23, wherein:

2 5. A voltage applied between the first and second electrodes and the third electrode is a direct current, and a current limiting resistor is connected to the electrodes. The display device according to claim 23.

26. The display device according to claim 25, wherein the current limiting resistor is 1 MQ to 1 GQ.

24. The display device according to claim 23, wherein the applied voltage is an alternating current or a rectangular wave.

28. The display device according to claim 27, wherein the frequency of the applied voltage is 60 Hz to 1 OKHz.

2 9. A substrate having an electrode and a dielectric layer formed thereon, wherein the dielectric layer comprises a first dielectric layer and a second dielectric layer denser than the dielectric layer Plasma display panel characterized by the following.

30. The plasma display panel according to claim 29, wherein said second dielectric layer is made of an electrically insulating polymer.

31. The plasma display panel according to claim 30, wherein the second dielectric layer is a polymer having a silicon-silicon bond.

32. The plasma display according to claim 30 or 31, wherein the second dielectric layer is made of a poly-silicon containing a siloxane bond or a copolymer thereof. Panel

33. A substrate having an electrode, a dielectric layer, and a dielectric protection layer formed thereon, wherein the dielectric layer is more dense and more dense than the first dielectric layer and the first dielectric layer. A plasma display panel comprising a first dielectric layer and a second dielectric layer provided in the first dielectric layer.

34. A step of forming an electrode on the substrate, a step of forming at least a first dielectric layer on the electrode, and a step of forming a second denser layer on the first dielectric layer. Forming a second dielectric layer, baking the substrate in an oxygen atmosphere after forming the second dielectric layer, and forming a dielectric protection layer on the second dielectric layer. A method for manufacturing a plasma display panel, characterized by having:

35. The method for manufacturing a plasma display panel according to claim 34, wherein the second dielectric layer is an electrically insulating polymer.

36. The process according to claim 35, wherein the electrically insulating polymer is a polymer having a silicon-silicon covalent bond as a main chain. A method for manufacturing a Razuma display panel.

37. The plasma display panel according to claim 35, wherein the electrically insulating polymer is a silicone containing a siloxane bond or a copolymer thereof. Manufacturing method.

38. A step of forming an electrode on the substrate, at least a step of forming a first dielectric layer on the electrode, and a step of forming a finer dielectric layer on the first dielectric layer. Forming a second dielectric layer, baking the substrate in an oxygen atmosphere after forming the second dielectric layer, and forming a first dielectric layer on the second 'dielectric layer. Forming a plasma display panel.

39. The method for producing a plasma display panel according to claim 38, wherein the second dielectric layer is an electrically insulating polymer.

40. The method for producing a plasma display panel according to claim 39, wherein the electrically insulating polymer is a polymer having a silicon-silicon co-bond as a main chain. .

41. The plasma display panel according to claim 39, wherein the electrically insulating polymer is a poly-silicon containing a siloxane bond or a copolymer thereof. Production method.