TW320815B - - Google Patents
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- TW320815B TW320815B TW82103846A TW82103846A TW320815B TW 320815 B TW320815 B TW 320815B TW 82103846 A TW82103846 A TW 82103846A TW 82103846 A TW82103846 A TW 82103846A TW 320815 B TW320815 B TW 320815B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
Description
經濟部中央標準局R工消費合作社印製 320815 A6 _B6 五、發明説明(1 ) 發明镅城 本發明掲示一種電發光叠Η及其製造方法。本發明亦 掲示一種電發光顯示板用來自電發光®片電氣接線到電 壓驅動電路》本發明進一步掲示一種在平面叠片刻畫圖 型的雷射,諸如電發光璺片透明電極的位址線。 發明背晉 電發光(EL)是因施加電壓而自磷發射的光。電發光裝 置具有應用為燈及顯示器。目前,電發光裝置用於平板 顯示条統,包含在短形矩陣中一者預先定義字元形狀或 者個別可位址的像素。 電發光的先鋒工作過去在G T E S y 1 ν a n i a (公司名)進 行。交流(AC)電壓外施到粉沫或分散型EL裝置,在其中 磷光發射粉埋設在所沉積於玻璃基體且覆蓋透明電極的 有機黏結劑中。此等粉沫或分散型EL裝置一般待徴是低 亮度以及其他問題而阻礙廣泛使用。 薄膜電發光(TFEL)裝置在1 9 5 0年代發展。AC薄層 片的基本構造是眾所周知,例如見資訊顯示學會童克維 斯待(T 〇 r nq v i s t R . 0 .)之1 9 8 9年國際座談發表會演講記 錄’’薄-層電發光顯示器"及頒給富山(Fuyaraa)等之美國 專利4,857,802號。磷層包夾在一對電極之間,且自此 電極以個別絶緣/介質層來分離。最平常地,磷材料是 包括錳(Μ η )做為活化體(摻雜劑)的硫化鋅(Z n S ) β ZnSMn是發黃色光β其他顔色磷已經開發了。 -3 - ---------ί—------{-----裝------ΪΓ------Μ (請先閱讀背面之注意事項再塡寫本頁) 本紙張尺度適用中圃國家標準(CNS)甲4規格(210 X 2971'釐) 82. 5. 20,000 經濟部中央標準局8工消費合作社印製 A6 B6 _ 五、發明説明(2 ) 習用TFEL叠Η層是沉積在,通常是玻璃的基體上。因 而此層的沉積是以眾所周知的薄膜技術來做的,例如電 子束(Ε Β )真空蒸發或濺散及,最近,原子層晶膜術(A L Ε ) 。整個TFEL®片厚度只在1或2徹米Um)的位階。 為自電極分離電氣絶緣磷層,已知各種絶緣/介質材 料並且使用為如下文中所詳細討論。 此兩電極的各電極不同,視是否在此裝置的"後"或 ”前視圖)側而定。反射金屬典型地諸如鋁用做後電 極。相當薄的透光層的氧化絪錫(ITO)典型地使用做前 電極〇燈的應用中,兩電極形成連缠層的形式,藉此使 兩電極之間的整個磷層遭受電場。典型的顯示應用中, 前及後電極以定義列及行電極的電氣導電位址線來適當 地做成圖型。像素定義在此例及行電極重叠之處。已知 各種的電子顯示驅動器其以使一列電極及一行電極同時 帶電來位址個別的像素。 雖然觀念上簡單,但薄膜電發光裝置的開發曾遭遇許 多實際上的困難。第1困難緣由此裝置以薄膜技術所沉 積個別疊Η層來形成既費時又成本貴的技術的事實。任 何層的很小的不良會造成故障。第2 ,此等薄膜装置典 型地在相當高電壓作業,即300-45(3伏待峰對峰值。事 實上,此等使磷層作業的電壓是會超過其介質崩潰電壓 而造成導電。磷層任一側的薄膜介質層需要限制或防止 電極之間的導電。大電場的施加會造成電極之間的電氣 ---------Ι---.------f-----裝------.玎------為 (請先閲讀背而之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4規恪(2〖0 X 297公發) 82. 5. 20,000 520815 A6 B6 經濟部中央標準局貝工消費合作社印製 五、發明説明(3 ) 崩潰,導致装置的故障。 本發明特別針對電發光裝置的絶緣/介質層及防止跨 過磷層的放電。電發光裝置成功作業的要求是電極(位 址線)自磷層隔離。此功用是以絶線/介質層來提供。 典型地,絶緣/介質層是附在磷層的任一侧而且由鋁、 釔、矽、氮化矽或其他介質材料所構成》裝置作業期間 ,自絶緣層及磷層之間的介面的電子當其通過磷層時受 電場加速,而碰撞磷層中的摻雜質原子,此碰撞過程的 結果為發射光。習用TFEL裝置中,為確保跨接磷層的電 場強度充分高,介質層的厚度通常保持小於或可比較於 磷層的〇如果介質層太厚,則外施在位址線之間的大部 份電壓跨接在介質層而不是跨接在磷層。 介質材料要和磷層可相容是重要的。用"可相容",用 於本規範及申請專利範圍中意即:第1 ,提供良好的注 入性介面,即,磷介面的熱電子源能在一施加電場時促 進或隧道進入磷導電帶而在磷層中起動導電及發射光。 第2 ,在可相容的意義之内,介質材料必需化學性穩定 以便不會和鄰接層,即磷或電極,起反應。 典型的T F E L中,為達到充分發光性,外施電壓很靠近 發生介質電氣崩潰的電壓。如此,介質及磷層的厚度及 品質上的製造控制必需嚴格控制來防止崩潰。此要求同 樣使逹到高製造能力困難〇 典型的T F E L構造是自前(視)側到後側來製作。薄層 ---------I---‘------^-----裝------.玎------M J (請先閱讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS) f 4规格(210 X 297公诠) 82. 5. 20,000 經濟部中央標準局8工消費合作社印製 A6 _B6_ 五、發明説明(4 ) 是順序地沉積在一適當的基體上。玻璃基板是利用來提 供透明性。此透明的前電極(I T 0位址線)以濺散法沉 積在玻璃基體上約0.2徹米的厚度。然後通常隨後的介 質-磷-介質層以濺散或蒸發法來沉積。磷層厚度典型地 約0.5撤米。在約451TC沉積之後,通常磷層退火來改善 效率。然後,加上典型地具有0.1徹米厚度成鋁位址線 形式的後電極。此製成的TFELS片經封包以便防止外部 潮濕,使用環氣樹脂叠合蓋玻璃或矽油封包。初始用來 沉積的基體中典型是玻璃,使用於TFEL昼片製作的材料 及沉積技術不能需求高溫處理。 用於使TFEL裝置作業的高電場強度對介質層有重責的 要求。要求高介質強度避免電氣崩潰。較佳地介質具有 高介質常數以便在最小的可能驅動電壓下提供發光。然 而,利用高介質常數材料的努力未曾提供滿意的結果。 為降低TFEL元件的驅勤電壓,絶線層己自較高介質常 數材料來製作,例如S r T i 0 3 (三氣化锶鈦)、P b T i 0 3 (三氣化鉛鈦)、及B a T a 0 3 (三氣化鋇鉅),如頒給 富山等的美國專利第4,857,802號所報告的。然而,此 等材料表現不佳,顯琨低介質崩潰強度。美國專利第 4,857, 802號中,介質層是以控制薄膜沉積技術而自鈣 鈦礦(perovskite)晶體形成來達到一增加的平面定向 (1 1 1 h專利報告較高的介質強度(在約8 . 0 X 1 0 s〜 1 · 0 X 1 0 s伏特/公分)具有利用S r T i 0 3、P b T i 0 3及 ---------Ί —J------<-----裝------.玎------尊 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4峴格(210 X 297公釐) 82. 5. 20,000 經濟部中央標準局员工消费合作社印製 320815 A6 __B6_ 五、發明説明(5 ) BaTiO 3約0.5徹米厚度的介質層,其全部具有高介質常 數及鈣鈦礦晶體。對此介質層,此裝置仍具有需要複雜 及困難的缺點來控制薄膜沉積技術。 亦有努力利用厚陶瓷絶綠層及薄膜電發光層開發TFEL 装置,見T·宮田等,SID 91文摘等70-73及286-286頁。 此装置是自BaTi03陶瓷片製造。此陶瓷片是以習用冷 壓方法模塑細緻的BaTi03粉沫成圓盤(直徑20厘米) 來形成。此圓盤在1300 °C空氣中燒結,然後磨光並抛光 成約0.2厘米厚度的陶瓷片。發射層是以利用化學蒸發 沉積或射頻磁控管濺散來沉積成薄膜在此陶瓷片上。然 後,以薄膜技術沉積適當的電極層在此構造的任一側上 。雖此裝置顯現某些期望的特性,但自固體陶瓷片製造 商用TFEL裝置是不可行的。磨光且抛光較大的陶瓷片成 為一致的0. 2厘米厚度經濟上不實用。 在此技術中眾亦周知在磷層的每一倒上利用多絶緣/ 介質層。例如,頒給孫(Sun)的美國專利第4 ,897,313號 發表包夾在一對絶緣叠加Η之間具有EL磷層的TFEL,在 其中絶緣S加片之一或兩者包括一第一層的氮氣化矽 (SiON)及一第二層的鉅酸Μ (ΒΤ0)。第一層的SiON層提 供高電阻率,而第二層的ΒΤ0具有較高介電常數。總括 地,所説明的構造在習用電壓下産生較高亮度的磷層。 然而,絶綠雇是以射頻濺散來沉積,其具有在上逑薄膜 技術的缺點。 ---------ί---1------ί-----裝------#------竣 (請先閱讀背面之注急事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS) f 4規格(210 X 297公釐) 82. 5. 20,000 五、發明説明(6 ) A6 B6 經濟部中央標準局員工消费合作社印製 及有。牽。二 材料 料有較透雷 塔圖利良吸 。 度具層常程用3P體材10材沒是,用 卡 導 低極 光需質經過使 j導極 體光長度利 給 Μ 教1¾¾此電 .發必介型刻般明電tel導的波厚來 ^ ^ 0 ^ 0 ^ 高此的圖蝕一磁Μ透明 半長的的難 號昜專Μ補透 較成上@學 。^[if當透W或量隙層困92以此㈠為此 有達之電化料 、'別 ,Η體能帶此得,0ϊ±。^ 。發 具。度作及材 L特中 緣的能及使921Γ型Μ光Μ 置的強製刷體ίιΗ * ^ ^ ^ ^ Ε « ,,2whm的熱 装行場中印導“W題TFgE。帶對波收 Hi極U收來 TF是的絪石透on有習M}子料的光。»^-明$分雷 用仍要化像種Jtt40型 。^體電材光射線3«“透_充的 習作需氣照此ίο於圔時),基的明為雷址ill發的S1能率 比製所如、番η大極上τοί料透因的位上1¾不功 要時置諸罩刻 G 般電層(I璃材光,良極akf 層關中值 需同裝料面來YA一畫明錫玻應對此不電31105明_ 層峰 有,動材的用及ί刻透洇示對。因示蝕(Η7,透 α 明高 置壓驅體貴案氣圍來一化顯所收。顯燒克66一 1 透有 装電在導昂提氬範光另氣明較吸短料地拿4,另Gm的具 rEL作度明及經 '線長在是透長的的材接漢第在YA何用 TF工強透闊已磺外波積型在波強光極直給等積波任使 對低質在廣射化紅長沉典積,很見電能頒諾沉脈在 , 較介 涉雷氧見種料,沉中受可明射 拉型用而收 ---------I----------_-----裝------ΪΤ------屬 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公货) 82. 5. 20,000 經濟部中央標準局员工消費合作社印製 A6 _B6_ 五、發明説明(7 ) 钕Y A G雷射在4 - 5瓦(W )以3 6 Κ Η z脈波在2 0公分/秒(c m / sec)的掃描率工作。此專利的例子發表如此刻畫沉積在 玻璃上的ITO,。然而,經刻畫的線如所説明的在適當 位置上没有完全去除ΙΤ0,而且熔化玻璃到數百埃U)的 深度。殘留的I Τ 0必需以隨後蝕刻步驟去除。 其他方法在透明電極材料中形成電極牽涉利用燒蝕雷 射,其産生在電磁頻譜紫外線區内較短波長的光。在此 波長,透明電極材料能吸收此雷射能量《此性質的雷射 經建議形成導電圖型用於液晶顯示(給今藤(Imatou)等 第 4,980,366號,給山崎(Yanazaki)等第 4,927,493 號之 美國專利),光電伏待電池(給卡爾森(Carlson)等第 4, 783 ,421號,及給山崎等第4,854, 974號之美國專利) 、影像感測器(給坂間(S a k a m a )等美國專利第5,0 4 3,5 6 7 號)、及集體電路(給梁(Leung)美國專利第5, 109, 149 號)。自動顯示A/S則有公告於1990:年8月23日的W0第9 0 / 0 9 7 0 號,其發表一種過程以燒蝕雷射刻畫透明基體上透明導 體中的電極點矩陣圖型。 雖燒蝕雷射産生透明電極足以吸收的短波長的光致使 電極可以直接燒蝕來圖型,此種雷射是相當昂貴而且刻 盡過程必需小心控制防止熔化或燒蝕在下面的顯示玻璃 。更進一步,此種過程會導致過多或不完全燒蝕透明電 極材料《例如,W 0第9 0 / 0 9 7 0號中顯示,如果要燒蝕材 料的局部去除,留下的部份可以化學或電漿蝕刻去除。 -9 - (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS) f 4規格(210 X烈7公¢) 82. 5. 20,000 五、發明説明(8 ) A6 B6 經濟部中央標準局工消費合作社印製 ¾之 射號。j 吸 轉列 稱提加到行壓的的 性在 題層 雷95射 W 性 路的。對來施加的電板有 極板 問在。高89反教擇 電器的不列波施擇波示所 反示 他免層提09’的 選 此示用在一脈壓選脈顯到 相顯 其避壁來90光J,處 ,顯可。到壓電已正。加 以持 的 '障理 4’射*ίι之 上到已用壓電零。上射施 ,保 遇Ψ0散處第雷蝕 本壓是使電正而}行發時 之為 遭 j擴面的少 I 燒 基電H)器限一 }的及光同 代 。 所 W供表0)減 望 。.一 曰曰示臨,的光壓生波 。板 中 提的an而9 期 路加 U 顯次間光發電産脈 波示 料!»處料UC化40在 電施件EL負期發要列,新。脈顯 材罾面材丨氣68而 制而組和加的要不限素再待新到 極 9 介極諾面56層 控料動配施間將將臨像極伏再加 電12兩電卡表 4’明 的資驅術次時等等次此正 G 除施 明7,在明庫膜第透 器連列技 一描此此於於,在消波 透93,透給屬的的 示並行動以掃,,等接後持,脈 晝 4’染導,金η)蝕 顯成的驅板列即即相跨之雒中動 刻第污教如使la燒 以料藝稱^各^^ 一施址行計驅 上的互曾例導ap要 動資工對,。行行,外位的設的 體崎交利。教(C所。驅像創及中波的的處壓經有動組 基山及專收利闌層光發影新稱法脈擇擇叉電已所驅似 明給散他吸專普塗射開連。對方動選選交的列而稱相 透在擴其的.國凱料雷己串行不動驅已經的和有,對 一 表間 光美給染收 換及 驅供到沒列之所列 的 ---------Γ---.------ί-----裝------*可------尊 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS) f 4規格(210 X 297公釐) H2. 5. 20,000 320815 經濟部中央標準局S工消費合作杜印製 A6 B6 五、發明説明(9 ) 工作中,以在偶及奇圖框上交變極性的脈波掃描列。此 交變極性在所有的顯示像素上産生淨零電荷》 新創工II高電壓驅動組件(晶Η )可用於不對稱及對 稱驅動技術兩者。 已知用於或開發中的E L顯示器的交變驅動電路及組件 ,例如參看Κ ·昭治(S h 〇 j i )等之T F E L顯示器的雙向推挽 式對稱驅動方法,物理青年會報1989年卷38第324頁; 及S.蘇頃(Sutton)等之薄膜電發光顯示驅動器的最新發 展及趨勢,物理青年會報1989年卷38第318頁;波哥 (Bolger)等之驅動EL板之第二代晶片組,1985年SID第 2 2 9 頁。 上逑驅動設計稱為多工(無源的)矩陣位址設計。理 論上,其他型式的驅動設計,諸如:主動矩陣位址設計 ,能和E L顯示一起使用。然而,此等是尚未開發。此種 交變驅動設計因用於本應用應認為在柑位電壓驅動電路 意義之内。 習用E L顯示器中,連接行列位址線到驅動電路的一種 方法是壓縮包含連接到顯示位址線的接觸列及連接到驅 動電路的驅動組件之間許多相近間隔的金屬片之聚合板 條,其製作在一分離電路板上(請看給艾辛格(Essinger) 第4,5 0 8,9 9 0號美國專利)^聚合板條是層形彈性材料 元件(LEE),眾所周知商品名是STAX及斑馬(ZEBRA)。LEE 是由導電及非導電彈性材料的交替層構成的。聚合板條 --------τ---;-----1 -----裝------·玎------^ (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標半(CNS)甲4规格(210 X四7公釐) 82. 5. 20,000 經濟部中央標準局3工消費合作社印52 A6 B6 五、發明説明(10) 避免耗工時地使用焊接或熔接接線連接數百ί固別布線到 觸點的需要。然而,互連接線技術不可靠,而且在高溫 功用不好,會引起聚合材料蠕變。 另一種方法普遍使用於液晶顯示器(L C D s )來連接行列 位址線到驅動電路被認為是電發光顯示器,即晶片在玻 璃上(C 0 G )技術。位址線要連接的驅動組件(晶片)組 裝在顯示器周邊周圍。LCDs的情形中,蒸發在顯示玻璃 後面上的位址線,自顯示器的有效區延展,以致其等終 於布置成圖型的襯墊以便晶體能在此搭接線。線搭接擔 負在顯示玻璃上組裝晶片,而然後個別地熔接細金線到 晶片上的輸出襯墊以及位址線上的對應觸點襯墊。 COG技術的優點是顯示玻璃及驅動電路之間的觸點數 目大致滅少,因至目前止最大數目的觸點是在驅動晶Η 及位址線之間《在驅動晶片及其他的驅動電路之間典型 只有約2 0到3 0個接線,而相對的其他的驅動電路所接到 位址線則多到2 0 0 0接線。 COG技術主要缺點是線搭接驅動晶片來連接其等到位 址線上薄膜襯墊所經歷的困難,導致不良的製造生産能 力。另一缺點是需要有空間在顯示器的周邊周圍來組裝 驅動晶片,如此,增加顯示器的體鬆度及打消任何結合 一些顯示器模組成為陣列形成較大的顯示器的可能性/ 用於直接電路接線的通孔技術在半導體技術中已廣泛 地眾知周知(請看例如,給中村(Nakamura)的第 -1 2 - 本紙張尺度適用中國國家標準(CNS)甲4规格(2丨0 X 297 5. 20,000 --------T--->-----1-----裝------.玎------# (請先閲讀背面之注意事項再塡寫本頁) 經濟部中央標準局S工消費合作社印製 A6 B6 五、發明説明(11) 3 , 6 4 1 , 3 9 [)號美國專利)。給揚格(Y 〇 u n g )等第4,7 11),3 9 5 號專利説明以穩定真空來即製通孔基體的方法及裝置。 然而,對發明者的智識,通孔印製沒有成功地應用於EL 顯示器。 給雷克(Lake)等第3,504,214號美國專利說明一種Η 段儲存型的EL裝置,其中像素以光接通而使緊接於磷層 @光導層變成電氣導電。説明複雜的通孔導體。本專利 指出一般通孔接線不配合於高解像度TFEL顯示器,因為 導電材料可能和磷起作用,因此降低顯示器的性能》 發明槪沭 電發光畳片各層具有不同介電常數。跨於叠片層的電 位差係根據各層厚度成比例地分跨在各層,而且成反比 例於材料的相對介質常數。例如,如果一層具有2倍於 另一層的厚度及介電常數,則電壓相等地分壓在此兩層 之間。本發明利用這種特性組合具有高介質常數的厚介 質層及具有大致較低介質常數較薄的磷層。如此,在經 由磷層起動導電之前,跨於像素的電壓能充分地跨接於 磷層,衹要介質層具有充分高介質常數。 本發明提供具有新穎及改良介質層的EL«片及製造此 畳片的方法β介質層自陶瓷材料形成為厚層而提供: —介質強度大於約1.0Χ 1〇6伏恃/米(V/m); 一介質常數使介質材料的介電常數(k2 )對磷層(ki ) 的比例大於約5 Ο ·· 1 (較佳地大於1 (3 0 : 1 ); -1 3 - 本紙張尺度適用中國國家標準(CNS) f 4規格(210 X 297公货) 82. 5, 20,000 ---------;---j------f ------裝------訂------專 (請先閱讀背面之注意事項再塡寫本頁) A6 B6 五、發明説明(12) (請先閱讀背面之注意事項再塡寫本頁) 一厚度使介質層厚度(d 2 )對磷層(d i )的比例在約2 0 :1到5 0 0 : 1的範圍(較佳地4 0 : 1到3 0 0 : 1 );及 一鄰接於磷層的表面可相容於磷層並且充分平滑使磷 層在規定激勵電壓下大致均勻地發光。 包括本發明介質層的簦片最佳地是磷層在其中是薄暌 層。典型薄膜磷層以Z n S : Μ η形成具有約厚0 . 2到2 . 0徹 米,典型約〇 . 5徹米。Z n S : Μ η材料具有約5到1 ϋ的介質 常數。根據最佳的磷層的理論計算(請看上文中所發表 的指南),本發明的介質層具有大於約5 0 0的介質常數 ,且最佳地大於約1QQ0,而且厚度在約1Q-3Q0微米的範 圍,且較佳地在2Q-15Q徹米之間。為達到高介質常數, 較佳地是鐵電材料,最佳地具有鈣鈦礦(Perovskite)結 晶構造的此等材料。範例材料包括:P b N b 0 3 (三氧化 鉛鈮)、BaTiO a、SrTiO 3 及 P b T i 0 3 〇 經濟部中央標準局员工消费合作社印製 本發明的介質層是形成從後到前製作的畳片。如此, 後電極沉積在基體上,最佳地諸如氣化鋁的陶瓷,其在 製造中能比玻璃耐更高的溫度(用於前到後TFEL構造以 便提供前透明)。然後,以厚膜技術,在後電極上沉積 本發明的介質層。然後在基板及後電極能耐得的高溫下 燒結》厚膜技術及高溫燒結的使用對介質層整體性質是 重要的,因為逹到具有高度結晶性的密緻的層,改良此 層的整體介質常數及介質強度》 實用上,發明者發現以現有可用的陶瓷材料困雔於産 -1 4 - 82. 5. 20,000 衣紙張尺度適用中國國家標準(CNS) f 4規格(2丨0 X 297公釐) 經濟部中央標準局貝工消费合作社印製 A6 B6 五、發明説明(13) 生鄰接於磷層的所期望的介質表面(卽,可相容及平滑 ♦ 的)。如此,本發明詳細實施例中,介質層形成為兩層 ,形成在後電極上的第一介電層如上文所述具有較佳的 高介質強度及介質常數值,以及第二介質層如上文所述 提供鄰接磷層的表面》 本發明詳細實施例中,第一介質層以厚膜技術沉積( 較佳地以絲網印製),隨後以高溫燒結(較佳地,小於 所有較下層的熔點,典型小於1000 °c) ^包含鐵電陶瓷 的百克多(Pactco)具有鈣鈦礦結晶結構,是如上述較佳 的材料,提供糊配方允許在髙燒結溫度下燒結。第二介 電層較佳地以溶凝膠技術來沉積,隨後以高溫燒結而提 供一平滑表面。用於第2層的材料較佳地提供高介質常 數(較佳地大於20,更佳地大於1GQ)以及大於2微米 的厚度(較佳地2-1Q微米)^鐵電陶瓷具有鈣鈦礦結晶 構造的最佳。 本發明己示範自鈮酸鉛絲網印製成厚3 Q徹米的第一介 質層及自錯酸鈦酸鉛溶膠自旋沉積成2-3徹米厚的第二 介質層。亦已示範溶凝膠層以浸液形成6-10徹米總厚度 的一些層。誥酸鈦酸鉛钃亦示範成一溶凝膠層。 使用2層介質,雖不是基本需要,但具有其優點。雖 第一介質層形成為具有所需高介質強度及高介質常數的 厚層,但第二層沒有如此限制。衹要第二層具有所期望 的可相容及平滑的表面,其可以自不同於使用在第-層 -1 5 - 本紙張尺度適用中國國家標準(CNS)甲4规格(210 X 297公¢) 82. 5. 20,000 ---------^----------^-----裝------訂------為 (請先閱讀背面之注意事項再塡寫本頁) A6 B6 經濟部中央標準局貝工消費合作社印製 五、發明説明(14) 的材料形成為較薄層。許多研究己進行有關變更介質性 質一 EL疊片的磷介面,例如來改善化學穩定性或注入性 。包括此等改良的材料或沉積技術能配合本發明第一及 /或第二介質層來使用,例如,以變更第二層表面,或 以施加在第一或第二層上面的第三材料的進一步薄膜層 ,選擇用於第一或第二層的材料或沉積技術。 根據本發明所製的畳片所示範而顯現良好發光性而没 有低工作電壓的崩潰。比較上文所述薄膜技術,用於介 質層之較佳的厚膜及溶凝膠沉積技術大致上是簡單並且 不昂貴的技術。本發明介質層的另一優點是併合此介質 層的曼Η不需要進一步的介質層在碟層及第2電極之間 ,雖然此種一進一步的介質層,如果期望,也可以包括 在内。 如此,一廣泛觀點中,本發明提供包括磷層包夾在前 及後極之間型式的電發光畳片中的介質層,此後電極形 成在基體上而磷層以介質層自後電極分離《介質層包含 自提供大於約l.Ox 10s V/m介質強度及介質常數使1^2 /ki比值大於約50·· 1的陶瓷材料所形成的平面層,此 介質層具有厚度使得d 2 : d 1比值約在2 0 : 1到5 0 0 : 1 的範圍,而且此介質層具有一表面可相容於磷層且充分 平滑使磷層在規定激勵電壓下大致均勻地發光。 本發明亦廣泛地擴展到形成介質層在包括磷層包夾在 前及後極之間型式的電發光疊片的一種方法,後極形成 ---------I---;------L-----裝------.玎------典 (請先閲讀背面之注意事項再塡寫本頁) 衣紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 ^^0815 ^^0815 經濟部中央標準局員工消費合作社印奴 A6 B6 五、發明説明(15) 在基體上,而磷層以介質層自後極分離。此方法包含: 以厚膜技術在後電極上沉積、隨後燒結,一種具有介質 常數使k 2 / k i約大於5 Q : 1的陶瓷材料,而形成具有介 質強度約大於1 . 〇 X 1 〇 6 V / m及厚度使得d 2 / d 1比值在 約20: 1到5G0: 1的範圍内的介質層,此介質層形成鄰 接磷層的一表面,其可相容於磷層並且充分平滑使得磷 層在規定激勵電壓下大致均勻地發光。 本發明亦廣泛提供一過程用來雷射刻畫圖型在具有至 少一上覆蓋層(上蓋層)及至少一在下面層(下墊層) 的平面叠片,包含: 外施己聚焦的雷射光束在《片上覆蓋層側上,該雷射 光束具有大致不為上覆蓋層所吸收的波長,但為在下面 層所吸收,使得整値其厚度範圍在下面層至少一部直接 燒蝕而上覆蓋層間接地燒蝕。 ELSH本文中,上覆蓋層是透明導電材料,而磷層、 在下面層是一或多種介質層並且圖型是平行間隔位址線 的電極圖型》 在整値規格及申請專利範圍中,適用下列定義: —趿收當照射能量的量子和在材料内己容許過渡到更 高能量狀態一致時發生在材料内,例如,為材料促進電 子通過能帶隙》 一以雷射光束間接燒蝕材料發生在燒蝕主要原因是分 解及/或因為材料吸收雷射光束照射能量。 -以雷射光束間接燒蝕材料發生在燒蝕主要原因是因為一鄰接材料吸收 雷射光束照射能量所産生及擇遞的熱 -1 7 - 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 --------一----Γ------ί-----裝------'玎------Μ (請先閲讀背面之注意事項再塡寫本頁) 經濟部中央標準4員工消费合作社印製 A6 B6 五、發明説明(16 ) 而蒸發。 本發明亦擴展到一種電發光顯示板,利用通孔導體, 提供自平面電發光簦片電氣接線到驅動電路之一或多ί固 電壓驅動組件的輸出。此顯示板包括: -電發光叠片,形成在後基體上,而且具有交叉位址 線的前及後組,諸如此技術中眾所周知的; 一多數的通孔,形成在鄰接於位址線端的基體中;及 -形成導電通路之裝置,經過基體上各通孔到位址線 的各端,以提供各位址線的電氣接線到驅動電路的電壓 驅動組件。 較佳地,顯示板的電發光曼片包括本發明的厚膜介質 層。此介質層能使叠片自後基體向前視倒來製作,其同 樣能使通孔連接器及厚膜電路圖型來接線到以電發光叠 Η製造步驟之交插電路製造步驟所形成的電壓驅動組件 及位址線。此種步驟不能在習用電發光叠片的製作中容 易地達成,因為此層是沉積在不耐溫度而燒厚膜導電糊 的前顯示玻璃上。 根據本發明,電壓驅動組件或整個驅動電路可以形成 在後基體的後(反面)倒上。通孔連接器的使用提供位 址線及驅動電路之間更直接、高可靠的互連接線。因不 需要在習用技術中所需要的顯示板周圍的無效周邊。此 便於自個別顯示板裝配大顯示器而在模組之間沒有暗邊 界。 -18™ 衣紙張尺度適用中國國家標準(CNS)甲4規格(2]0 X 21)7公釐) 82. 5. 20,000 ---------Γ---'------f-----裝------訂------為 (請先閲讀背面之注意事項再塡寫本頁) 32〇8jf5 A6 B6 明説 明發 、五 面 斷 横 意 示 的 造 構 Η '« 的 質 介 層 兩 明 發 本 括 包 是 1 圖 圖 圖 視 俯 的 造 構 Η 叠 1 圖 是 2 圖 驅横 壓意 電示 到的 線造 址構 位Η 極叠 電之 列例 行施 接實 連細 示詳 顯件 極組 電動 -Ί 驅 箸壓 沿電 是的 3 路 圏電 壓 電 的 路 電 動 驅 ηρ« 到 線 接 氣 電 的 線 址 位 於 用 有 具 ; 是 圖 4 面圖 斷 俯 的 型 圖 ·,路 圖電 視動 俯驅 的細 體詳 基的 後上 之側 型後 圖體 細基 詳後 孔在 通製 的印 件是 組 5 ; 動圖圖 驅 視 視 俯 的 墊 襯 行 及 極 電 列 之 上 側 前 1 afln 基 後 在 0 S3 印 是 6 圖 (請先閲讀背面之注意事項再塡寫本頁) i裝_ 圖 墊 襯 路 電 的 上 型 圖 路 電 動 驅 50 在 製 ·, 印圖 地視 佳俯 較的 是型 7 圖 圖化 強Printed by R Industrial and Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs 320815 A6 _B6 V. Description of the invention (1) Invention of americium city The present invention shows an electroluminescent stack and its manufacturing method. The present invention also shows an electroluminescent display panel electrically connected to a voltage drive circuit from an electroluminescent® sheet. The present invention further shows a laser that depicts a pattern on a planar stack, such as address lines for transparent electrodes of electroluminescent pads. Invention Backlight Electroluminescence (EL) is light emitted from phosphorus due to applied voltage. Electroluminescent devices have applications as lamps and displays. At present, electroluminescent devices are used for flat panel display systems, and contain one of the predefined character shapes or individually addressable pixels in the short matrix. The pioneering work of electroluminescence used to be carried out at G T E S y 1 ν a n i a (company name). An alternating current (AC) voltage is applied to the powder or dispersion type EL device in which the phosphorescent powder is embedded in the organic binder deposited on the glass substrate and covering the transparent electrode. These powder or dispersion type EL devices generally have low brightness and other problems that prevent widespread use. Thin film electroluminescence (TFEL) devices were developed in the 1950s. The basic structure of the AC thin layer sheet is well known, for example, see the presentation record of the 1989 International Symposium on the Presentation of the Information Display Society (T 〇r nq vist R. 0. ; And US Patent No. 4,857,802 issued to Fuyaraa, etc. The phosphor layer is sandwiched between a pair of electrodes, and the electrodes are separated by individual insulating / dielectric layers from then on. Most commonly, the phosphorus material is zinc sulfide (Z n S) which includes manganese (Μ η) as an activator (dopant). Β ZnSMn is a yellow light-emitting β. Other colors of phosphorus have been developed. -3---------- ί ------ {----- 装 ------ ΪΓ ------ Μ (Please read the notes on the back first (This page is written on this page) This paper scale is applicable to the Zhongpu National Standard (CNS) A 4 specifications (210 X 2971 'centimeters) 82. 5. 20,000 Printed A6 B6 _5. Description of the invention (8) 2) The conventional TFEL stacked H layer is deposited on a substrate, usually glass. Therefore, the deposition of this layer is done by well-known thin film technology, such as electron beam (Ε Β) vacuum evaporation or sputtering and, more recently, atomic layer crystallography (ALE). The thickness of the entire TFEL® sheet is only in the order of 1 or 2 cm (Um). To separate the electrically insulating phosphor layer from the electrode, various insulating / dielectric materials are known and used as discussed in detail below. The electrodes of these two electrodes are different, depending on whether they are on the "rear" or "front view" side of the device. Reflective metals such as aluminum are typically used as the rear electrode. The relatively thin light-transmitting layer of tin oxide ( ITO) is typically used as the front electrode. In the application of the lamp, the two electrodes are formed in the form of an intertwined layer, thereby subjecting the entire phosphor layer between the two electrodes to the electric field. In typical display applications, the front and rear electrodes define the columns And row electrode electrical conduction address lines to make the appropriate pattern. Pixels are defined in this example where the row electrodes overlap. Various electronic display drivers are known that address one column electrode and one row electrode simultaneously to address individually Pixels. Although simple in concept, the development of thin-film electroluminescent devices has encountered many practical difficulties. The first difficulty is due to the fact that the device uses thin-film technology to deposit individual stacked H layers to form a time-consuming and expensive technology. Very small defects in any layer can cause malfunctions. Second, these thin-film devices are typically operated at fairly high voltages, ie 300-45 (3 volts to peak-to-peak. In fact, this allows the phosphor layer to operate The voltage will exceed its dielectric breakdown voltage and cause conduction. The thin-film dielectric layer on either side of the phosphor layer needs to limit or prevent conduction between the electrodes. The application of a large electric field will cause electrical between the electrodes -------- -Ι ---.------ f ----- installed ------. 玎 ------ for (please read the precautions before writing this page) This The paper scale applies the Chinese National Standard (CNS) A4 regulation (2 〖0 X 297 public issue) 82. 5. 20,000 520815 A6 B6 Printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy V. Invention description (3) collapsed, Causes device failure. The present invention is specifically directed to the insulation / dielectric layer of the electroluminescent device and preventing discharge across the phosphor layer. The requirement for successful operation of the electroluminescent device is that the electrode (address line) is isolated from the phosphor layer. This function is absolutely Line / dielectric layer. Typically, the insulating / dielectric layer is attached to either side of the phosphor layer and is composed of aluminum, yttrium, silicon, silicon nitride, or other dielectric materials. During device operation, self-insulating layer and phosphor The electrons in the interface between the layers are accelerated by the electric field when they pass through the phosphor layer, and collide with the dopant atoms in the phosphor layer. The result is light emission. In the conventional TFEL device, in order to ensure that the electric field strength across the phosphor layer is sufficiently high, the thickness of the dielectric layer is usually kept less than or comparable to that of the phosphor layer. If the dielectric layer is too thick, apply it at the address Most of the voltage between the lines is connected across the dielectric layer instead of across the phosphor layer. It is important that the dielectric material is compatible with the phosphor layer. Use " Compatible " for this specification and apply for a patent The meaning in the scope is: First, provide a good injection interface, that is, the hot electron source of the phosphorus interface can promote or tunnel into the phosphorus conductive zone when an electric field is applied to initiate conduction and emit light in the phosphorus layer. Within the meaning of compatibility, the dielectric material must be chemically stable so as not to react with the adjacent layer, ie phosphorus or electrode. In a typical T F E L, in order to achieve full luminescence, the applied voltage is very close to the voltage at which dielectric breakdown occurs. As such, manufacturing control over the thickness and quality of the dielectric and phosphor layers must be strictly controlled to prevent collapse. This requirement also makes it difficult to achieve high manufacturing capabilities. A typical T F E L structure is manufactured from the front (view) side to the rear side. Thin layer --------- I ---'------ ^ ----- installed ------. 玎 ------ MJ (please read the back side first (Notes to be written on this page) This paper scale is applicable to the Chinese National Standard (CNS) f 4 specifications (210 X 297 public interpretation) 82. 5. 20,000 Printed A6 _B6_ by the Industrial and Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (4) It is deposited sequentially on a suitable substrate. The glass substrate is used to provide transparency. The transparent front electrode (I T 0 address line) was deposited on the glass substrate by a sputtering method to a thickness of about 0.2 cm. Then usually the subsequent dielectric-phosphorus-dielectric layer is deposited by sputtering or evaporation. The thickness of the phosphorous layer is typically about 0.5 m. After about 451TC deposition, the phosphor layer is usually annealed to improve efficiency. Then, a rear electrode is typically added in the form of an aluminum address line having a thickness of 0.1 cm. The prepared TFELS sheet is encapsulated to prevent external moisture, and the cover glass or silicone oil is laminated with a ring gas resin. The initial substrate used for deposition is typically glass, and the materials and deposition techniques used for TFEL daysheets cannot require high-temperature processing. The high electric field strength used to operate the TFEL device places heavy demands on the dielectric layer. High dielectric strength is required to avoid electrical breakdown. Preferably, the medium has a high dielectric constant to provide light emission at the smallest possible driving voltage. However, efforts to use high dielectric constant materials have not provided satisfactory results. In order to reduce the driving voltage of the TFEL element, the insulation layer has been made from a higher dielectric constant material, such as S r T i 0 3 (Strontium Titanium Trioxide), P b T i 0 3 (Lead Titanium Trioxide) , And B a T a 0 3 (barium giant gasification), as reported in US Patent No. 4,857,802 issued to Toyama et al. However, these materials do not perform well and exhibit low dielectric breakdown strength. In U.S. Patent No. 4,857, 802, the dielectric layer is formed from perovskite crystals by controlled thin film deposition technology to achieve an increased plane orientation (1 1 1 h Patent reports higher dielectric strength (at about 8 . 0 X 1 0 s ~ 1 · 0 X 1 0 s volts / cm) with S r T i 0 3, P b T i 0 3 and --------- Ί —J ---- -< ----- 装 ------. 玎 ------ Zun (please read the precautions on the back before writing this page) This paper scale is applicable to China National Standard (CNS) A 4 Dange (210 X 297 mm) 82. 5. 20,000 Printed 320815 A6 __B6_ by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (5) BaTiO 3 dielectric layer with a thickness of about 0.5 cm, all of which have high Dielectric constant and perovskite crystal. For this dielectric layer, this device still has the disadvantages of complex and difficult to control the thin film deposition technology. There are also efforts to develop TFEL devices using thick ceramic green layers and thin film electroluminescent layers, see T · Miyada et al., SID 91 Abstracts, etc., pages 70-73 and 286-286. This device is manufactured from BaTi03 ceramic sheet. This ceramic sheet is a fine BaTi03 powder molded by conventional cold pressing method Foam into a disc (diameter 20 cm) to form. This disc is sintered in air at 1300 ° C, then polished and polished into a ceramic sheet with a thickness of about 0.2 cm. The emission layer is deposited by chemical vapor deposition or RF magnetron sputtering It is deposited as a thin film on this ceramic sheet. Then, a thin film technique is used to deposit the appropriate electrode layer on either side of the structure. Although this device exhibits certain desired characteristics, it is not possible to use a TFEL device from a solid ceramic sheet manufacturer. OK. Polished and polished larger ceramic sheets become a uniform 0.2 cm thickness economically impractical. It is also well known in this technology to use multiple insulation / dielectric layers on each side of the phosphor layer. For example, U.S. Patent No. 4,897,313 to Sun published TFEL with an EL phosphor layer sandwiched between a pair of insulating superimposed layers, in which one or both of the insulating S plus sheets includes a first layer of nitrogenization Silicon (SiON) and a second layer of giant acid M (BT0). The first layer of SiON layer provides high resistivity, while the second layer of BT0 has a higher dielectric constant. In summary, the illustrated structure is in practice A higher brightness phosphor layer is produced under voltage. However, the most green is deposited by radio frequency sputtering, which has the disadvantage of thin film technology. --------- ί --- 1 ------ ί ----- 装------ # ------ Complete (please read the urgent matters on the back before writing this page) This paper size is applicable to the Chinese National Standard (CNS) f 4 specifications (210 X 297 mm) 82 5. 20,000 V. Description of the invention (6) A6 B6 Printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Lead. The second material is expected to be more transparent. It is not necessary to use 3P body materials for the regular layer. It is necessary to use the card to guide the low auroral quality. The light length of the j pole body can be used to teach the electricity. The wave thickness of the tel guide Come ^ ^ 0 ^ 0 ^ The high-level picture erosion is a magnetic M transparent half-length hard-to-done special M replenishment is better to go to @ 学. ^ [if when the W or the gap layer is trapped 92, then (i) for this reason, there is a good electrification material, 'don't, Η body can take this, 0ϊ ±. ^. Issue. The special middle edge of the material and the material can make the 921Γ type M light M compulsory brush body ίιΗ * ^ ^ ^ ^ Ε «,, 2whm printed in the hot-packing field" W title TFgE. Take the wave to receive The Hi pole U receives the light from the TF which is shining through the material. »^-明 $ 分 雷 用 Still need to be like the Jtt40 type. ^ Body electric material light ray 3« "transparent_charge (If you need gas as you do), the S1 energy rate issued by the Ming site is similar to that of the system, and it is located on the top of the τοί material. 1¾ If it is not necessary, it will be covered with a G-like electric layer. (I glass material light, good pole akf layer pass median value needs to be loaded with YA to draw a picture of Ming Xi glass should be not electric 31105 Ming _ layer peak there, the use of moving materials and engraving through the translucent show right. Because of erosion (Η7, through the high pressure of the high-pressure drive body, the gas circumstance will be collected by the chemical industry. The display is 66-1. It is charged and charged in the lead, and the light is relatively short. In addition, Gm's material with rEL operation and warp length is very long. It is connected to Handi in YA. TF is strong and transparent. The external wave product type is sulfonic. For the low quality in the wide-spreading red long Shen Dianji, it is very common to see that the electric energy is promulgated and the Shenmai is present. It can be received by open pull type --------- I ----------_----- install ------ ΪΤ ------ (Please read the precautions on the back before writing this page) This paper scale is applicable to the Chinese National Standard (CNS) A 4 specifications (210 X 297 public goods) 82. 5. 20,000 Printed by the Ministry of Economic Affairs Central Standards Bureau Staff Consumer Cooperative A6 _B6_ V. Description of the invention (7) The neodymium YAG laser works at 4-5 watts (W) at a scan rate of 3 6 ΚΗ Η z pulse at 20 cm / sec (cm / sec). The example of this patent is published like this Describe the ITO deposited on the glass. However, the inscribed lines do not completely remove the ITO at the appropriate position as described, and the glass is melted to a depth of hundreds of angstroms. The residual I Τ0 must be followed by an etching step Removal. Other methods of forming an electrode in a transparent electrode material involve the use of an ablative laser, which produces shorter wavelength light in the ultraviolet region of the electromagnetic spectrum. At this wavelength, the transparent electrode material can absorb this laser energy. It is recommended to form conductive patterns for liquid crystal display (for Imatou No. 4,980,366, for Yanazaki No. 4,927,493 U.S. Patent), photovoltaic battery (for Carlson et al. No. 4,783,421, and Yamazaki et al. No. 4,854,974), image sensor (for Sakama) Etc. US Patent No. 5, 0 4 3, 5 6 7), and collective circuits (Leung US Patent No. 5, 109, 149). The automatic display of A / S was announced in 1990: W0 No. 9 0/0 9 7 0 of August 23, 1990, which published a process to ablate the laser to depict the matrix pattern of the electrode points in the transparent conductor on the transparent substrate . Although ablation lasers produce short-wavelength light sufficient for the transparent electrodes to absorb, allowing the electrodes to be directly ablated for patterning, such lasers are quite expensive and the engraving process must be carefully controlled to prevent melting or ablation of the underlying display glass. Furthermore, this process will result in excessive or incomplete ablation of transparent electrode materials. For example, W 0 No. 9 0/0 9 7 0 shows that if the ablation material is partially removed, the remaining part can be chemically Or plasma etching to remove. -9-(Please read the precautions on the back before writing this page) The paper size is applicable to the Chinese National Standard (CNS) f 4 specifications (210 X Li 7 g) 82. 5. 20,000 V. Description of the invention (8) A6 B6 The shot number is printed by the Industrial and Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. j suction transfer column is said to be added to the line pressure of the property in the title layer of laser 95 W. There is a polar plate on the applied electric plate. The high 89 anti-teaching selection of the electrical appliance's Breeze selection wave display shows that he does not need to select the layer's 09 'selection. This display is used to select the pulse display at a pulse pressure to the phase display. Until the piezoelectric is positive. Add the "barrier 4" shot * ίι to the used piezoelectric zero. The top shot is applied to ensure the thunder erosion at the Ψ0 scattered point. This pressure is to make the electric current be the same as the photoelectric generation when it is transmitted. As shown in Table 0), the reduction is expected. . A day of commendation, a wave of light. The an and 9th phases mentioned in the board are shown in the Luke U Display Intergeneration Photovoltaic Generation Pulse! »Disposal of UC 40 is coming out in the negative phase of the electric applicator EL, new. Pulse display material and surface material are made by gas 68, and the combination and addition are not limited. It will be new to the end. 9 Diode Concentration Surface 56 layers of control materials will be placed in the room. Card table 4 'Ming's capital drive operation time and so on. This is G except Shi Ming 7, the serial technique in the Mingku membrane translucent device is described here. Show and act on Esau, and wait for the follow-up, the pulse is 4 'dyed and guided, and the gold η) erosion is the row of the drive plate, that is, the crossover is engraved. Each ^^ One of the site ’s planners and computer drivers once told ap to use the right fund. Xing Xing, the position of the outer body is Qijiao. Jiao (C Institute. The local pressure of the drive-like image creation and the medium wave is based on the active group Jishan and the special collection of the light layer. The new method is called the pulse of the pulse. Kai Lian. The other party's selection and exchange of names are known to expand their knowledge. Guo Kai expects that the serial drives will not be used and that they have been sold. The listed --------- Γ ---.------ ί ----- installed ------ * may ------ zun (please read the back first (Notes to be written on this page) This paper scale is applicable to the Chinese National Standards (CNS) f 4 specifications (210 X 297 mm) H2. 5. 20,000 320815 Ministry of Economic Affairs Central Standards Bureau S industrial and consumer cooperation du printing A6 B6 five 3. Description of the invention (9) In the work, the pulse train is scanned with alternating polarities on the even and odd picture frames. This alternating polarity produces a net zero charge on all display pixels. Crystal H) can be used for both asymmetric and symmetric drive technologies. Alternating drive circuits and components for EL displays that are known for use or under development, for example, see the bidirectional push of TFEL displays such as K jiji Pull-symmetric drive Law, Youth Youth Physics Daily 1989 Volume 38, page 324; and the latest developments and trends of thin-film electroluminescent display drivers such as S. Sutton (Sutton), Youth Youth Society Daily 1989 Volume 38, page 318; Bolger The second generation of chipsets for driving EL panels, SID page 229 in 1985. The upper drive design is called a multiplexed (passive) matrix address design. In theory, other types of drive designs, such as: Active matrix address design, can be used with EL display. However, this is not yet developed. This alternating drive design should be considered to be within the meaning of the voltage drive circuit for this application. In conventional EL displays, connect One method of row and column address lines to the driver circuit is to compress a polymer strip including a number of closely spaced metal sheets between the contact column connected to the display address line and the driver component connected to the driver circuit, which is fabricated on a separate circuit board (Please see Essinger's US Patent No. 4,5 0 8,9 9 0) ^ Polymeric lath is a layered elastic material element (LEE), the well-known trade names are STAX and Zebra (ZEBRA). LEE is caused by It consists of alternating layers of conductive and non-conductive elastic materials. Polymer slats -------- τ ---; ----- 1 ----- installed ------ · 玎- ---- ^ (Please read the precautions on the back before writing this page) The paper size is applicable to China National Standard (CNS) Grade 4 (210 X 47mm) 82. 5. 20,000 Central Ministry of Economic Standards Bureau 3 Industry and Consumer Cooperatives printed 52 A6 B6 V. Description of the invention (10) Avoid the need to use welding or welding wires to connect hundreds of wires to the contacts. However, interconnection and wiring technology is unreliable and does not function well at high temperatures, which can cause creep of polymer materials. Another method is commonly used in liquid crystal displays (LCDS) to connect row and column address lines to drive circuits and is considered to be electroluminescent displays, that is, wafer-on-glass (C0G) technology. The driver assembly (chip) to which the address line is connected is assembled around the periphery of the display. In the case of LCDs, the address lines evaporated on the back of the display glass extend from the effective area of the display, so that they end up being arranged as patterned pads so that the crystals can be wired here. The wire bonding is responsible for assembling the wafer on the display glass, and then individually welding the fine gold wire to the output pad on the wafer and the corresponding contact pad on the address line. The advantage of COG technology is that the number of contacts between the display glass and the driving circuit is almost eliminated, because the largest number of contacts is currently between the driving crystal H and the address line. In the driving chip and other driving circuits Typically, there are only about 20 to 30 wires, while the other drive circuits are connected to more than 200 wires. The main disadvantage of COG technology is the difficulties experienced by wire-lapped driver wafers to connect the thin film pads on the waiting line, resulting in poor manufacturing capacity. Another disadvantage is the need to have space around the periphery of the display to assemble the driver chip, thus increasing the body looseness of the display and eliminating any possibility of combining some display modules into an array to form a larger display / for direct circuit wiring Through-hole technology is widely known in semiconductor technology (please see, for example, No. 1-2 for Nakamura)-This paper scale is applicable to China National Standard (CNS) Grade 4 (2 丨 0 X 297 5. 20,000 -------- T --- > ----- 1 ----- install ------. 玎 ------ # (Please read the notes on the back first (This page will be written again) A6 B6 printed by the S Industry and Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. V. Invention Instructions (11) 3, 6 4 1, 3 9 [) US Patent). Patent No. 4, 7 11) and No. 3 9 5 to Yang (Yuang) et al. Describe a method and apparatus for preparing a through-hole substrate with a stable vacuum. However, to the inventor's wisdom, through-hole printing has not been successfully applied to EL displays. U.S. Patent No. 3,504,214 to Lake et al. Describes an H-segment storage type EL device in which pixels are turned on by light to turn the phosphor layer @light guide layer into electrical conduction. Explain complex via conductors. This patent points out that the general through-hole wiring is not suitable for high-resolution TFEL displays, because the conductive material may work with phosphorus, so the performance of the display is reduced. The invention has various dielectric constants for each layer of electroluminescent tablets. The potential difference across the lamination layer is proportionally divided across the layers according to the thickness of each layer, and is inversely proportional to the relative dielectric constant of the material. For example, if one layer has twice the thickness and dielectric constant of another layer, the voltage is equally divided between the two layers. The present invention uses this characteristic to combine a thick dielectric layer with a high dielectric constant and a thin phosphor layer with a substantially lower dielectric constant. As such, before the conduction is initiated by the phosphor layer, the voltage across the pixel can be sufficiently connected across the phosphor layer, as long as the dielectric layer has a sufficiently high dielectric constant. The present invention provides an EL «sheet with a novel and improved dielectric layer and a method for manufacturing this sheet. The beta dielectric layer is formed from a ceramic material into a thick layer to provide:-a dielectric strength greater than about 1.0 Χ10〇6 volts per meter (V / m); a dielectric constant such that the ratio of the dielectric constant (k2) of the dielectric material to the phosphor layer (ki) is greater than about 5 Ο ·· 1 (preferably greater than 1 (3 0: 1); -1 3-this paper The scale is applicable to the Chinese National Standard (CNS) f 4 specifications (210 X 297 public goods) 82. 5, 20,000 ---------; --- j ------ f ------ Installed ------ ordered ----- specially (please read the precautions on the back before writing this page) A6 B6 5. Description of the invention (12) (please read the precautions on the back before writing the book) Page) a thickness so that the ratio of the thickness of the dielectric layer (d 2) to the phosphor layer (di) in the range of about 20: 1 to 5 0 0: 1 (preferably 4 0: 1 to 3 0 0: 1); And a surface adjacent to the phosphor layer is compatible with the phosphor layer and is sufficiently smooth to make the phosphor layer emit light approximately uniformly under the specified excitation voltage. The thin plate including the dielectric layer of the present invention is preferably a phosphor layer in which the thin layer is thin A typical thin film phosphor layer is formed with Z n S: Mn having a thickness of about 0.2 to 2.0 Meters, typically about 0.5 ton. Z n S: Μ η material has a dielectric constant of about 5 to 1 ϋ. According to the theoretical calculation of the best phosphorus layer (please see the guide published above), the The dielectric layer has a dielectric constant greater than about 500, and optimally greater than about 1QQ0, and the thickness is in the range of about 1Q-3Q0 microns, and preferably between 2Q-15Q Chemi. To achieve a high dielectric constant, It is preferably a ferroelectric material, and most preferably these materials have a perovskite (Perovskite) crystal structure. Exemplary materials include: P b N b 0 3 (lead niobium trioxide), BaTiO a, SrTiO 3 and P b T i 0 3 〇 The Ministry of Economy Central Standards Bureau employee consumer cooperatives printed the dielectric layer of the present invention is formed from the back to the front of the production of tablets. In this way, the back electrode is deposited on the substrate, such as ceramics such as vaporized aluminum, It can withstand higher temperatures than glass during manufacturing (used in front-to-back TFEL construction to provide front transparency). Then, the thick film technology is used to deposit the dielectric layer of the present invention on the back electrode. Then on the substrate and back electrode Thick film technology and high temperature sintering The use is important for the overall properties of the dielectric layer, because a dense layer with a high degree of crystallinity is used to improve the overall dielectric constant and dielectric strength of this layer. Practically, the inventor found that the available ceramic materials are difficult to produce. -1 4-82. 5. The size of 20,000 clothing sheets is in accordance with Chinese National Standard (CNS) f 4 specifications (2 丨 0 X 297 mm) A6 B6 printed by Beigong Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs ) The desired dielectric surface adjacent to the phosphor layer (well, compatible and smooth). As such, in the detailed embodiment of the present invention, the dielectric layer is formed into two layers, the first dielectric layer formed on the rear electrode has a better high dielectric strength and dielectric constant value as described above, and the second dielectric layer is as above The surface providing the adjacent phosphor layer. In a detailed embodiment of the present invention, the first dielectric layer is deposited by thick film technology (preferably screen printing) and then sintered at a high temperature (preferably, less than all lower layers) Melting point, typically less than 1000 ° C) ^ Pactco containing ferroelectric ceramics has a perovskite crystalline structure and is a preferred material as described above. Providing a paste formulation allows sintering at high sintering temperatures. The second dielectric layer is preferably deposited by the lyogel technique and then sintered at high temperature to provide a smooth surface. The material used for the second layer preferably provides a high dielectric constant (preferably greater than 20, more preferably greater than 1GQ) and a thickness greater than 2 microns (preferably 2-1Q microns) ^ Ferroelectric ceramics have perovskite The best crystal structure. The present invention has demonstrated that a first dielectric layer with a thickness of 3 Q Chemi is formed by screen printing from lead niobate, and a second dielectric layer with a thickness of 2-3 Chemi is spin-deposited from lead acid titanate sol. It has also been demonstrated that the lyogel layer is formed with immersion liquid to form layers with a total thickness of 6-10 cm. Lead strontium titanate is also demonstrated as a lyogel layer. The use of 2-layer media, although not a basic requirement, has its advantages. Although the first dielectric layer is formed as a thick layer having the required high dielectric strength and high dielectric constant, the second layer is not so limited. As long as the second layer has the desired compatible and smooth surface, it can be used differently from the first layer-15-this paper scale is applicable to the Chinese National Standard (CNS) A 4 specifications (210 X 297 ) 82. 5. 20,000 --------- ^ ---------- ^ ----- installed ------ ordered ------ for (please first Read the precautions on the back and write this page) A6 B6 Printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy 5. The material of the invention description (14) is formed into a thin layer. Many studies have been carried out on changing the dielectric properties of the EL interface to the phosphor interface, for example to improve chemical stability or injection properties. Including these improved materials or deposition techniques can be used in conjunction with the first and / or second dielectric layer of the present invention, for example, to change the surface of the second layer, or to use a third material applied on the first or second layer Further to the thin film layer, the material or deposition technique used for the first or second layer is selected. The pancakes made according to the present invention are demonstrated to exhibit good luminescence without collapse of low operating voltage. Compared to the thin film technology described above, the preferred thick film and lyogel deposition techniques for the dielectric layer are generally simple and inexpensive. Another advantage of the dielectric layer of the present invention is that the combination of the dielectric layer does not require a further dielectric layer between the disc layer and the second electrode, although such a further dielectric layer may be included if desired. As such, in a broad perspective, the present invention provides a dielectric layer including a phosphor layer sandwiched between the front and back electrodes in the form of electroluminescent tablets, after which the electrode is formed on the substrate and the phosphor layer is separated from the rear electrode by the dielectric layer The dielectric layer includes a planar layer formed from a ceramic material that provides a dielectric strength greater than about 1.0 x 10s V / m and a dielectric constant such that the ratio of 1 ^ 2 / ki is greater than about 50 ·· 1. This dielectric layer has a thickness such that d 2: The ratio of d 1 is approximately in the range of 20: 1 to 500: 1, and this dielectric layer has a surface compatible with the phosphor layer and is sufficiently smooth to make the phosphor layer emit light approximately uniformly under the specified excitation voltage. The present invention also broadly extends to a method of forming an electroluminescent lamination in which a dielectric layer includes a phosphor layer sandwiched between the front and back electrodes, the back electrode is formed --------- I ---; ------ L ----- 装 ------. 玎 ------ Code (please read the precautions on the back before writing this page) The size of clothing paper is in accordance with Chinese national standards ( CNS) A4 specifications (210 X 297 mm) 82. 5. 20,000 ^^ 0815 ^^ 0815 Ministry of Economic Affairs Central Standards Bureau Staff Consumer Cooperative Inno A6 B6 V. Description of invention (15) On the substrate, the phosphor layer is The dielectric layer is separated from the rear pole. This method includes: depositing on the rear electrode with thick film technology, followed by sintering, a ceramic material with a dielectric constant such that k 2 / ki is greater than about 5 Q: 1, and a dielectric material having a dielectric strength of greater than 1.0 〇X 1 〇6 V / m and thickness such that the d 2 / d 1 ratio is in the range of about 20: 1 to 5G0: 1 dielectric layer, this dielectric layer forms a surface adjacent to the phosphor layer, which is compatible with the phosphor layer and sufficiently smooth so that The phosphor layer emits light substantially uniformly under a prescribed excitation voltage. The invention also widely provides a process for laser depicting patterns on a planar lamination with at least one upper cover layer (upper cover layer) and at least one lower layer (underlay layer), including: externally applied focused laser The beam is on the side of the cover layer on the chip. The laser beam has a wavelength that is not substantially absorbed by the upper cover layer, but is absorbed by the lower layer, so that the entire thickness range is directly ablated at least a part of the lower layer The cover layer is indirectly ablated. ELSH In this article, the upper cover layer is a transparent conductive material, and the phosphor layer, the lower layer is one or more dielectric layers, and the pattern is an electrode pattern with parallel spaced address lines. In the entire specification and patent application, it is applicable The following definitions: —Fun collection occurs when the quantum of the irradiated energy is consistent with the transition to a higher energy state in the material, for example, to promote electrons through the energy band gap for the material》-Indirect ablation of the material with laser beam The main cause of ablation is decomposition and / or because the material absorbs the energy of the laser beam. -Indirect ablation of materials with a laser beam occurs mainly due to ablation of the heat generated by an adjacent material to absorb the energy of the laser beam irradiation -1 7-This paper scale is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 82. 5. 20,000 -------- 一 ---- Γ ------ ί ----- install ------ '玎 --- --- Μ (please read the precautions on the back before writing this page) A6 B6 printed by the Ministry of Economic Affairs Central Standard 4 Employee Consumer Cooperative V. Invention Instructions (16) and evaporated. The invention also extends to an electroluminescent display panel that uses through-hole conductors to provide electrical wiring from planar electroluminescent grids to the output of one or more solid voltage drive components of the drive circuit. The display panel includes:-an electroluminescent lamination, formed on the rear substrate, and having front and rear sets of intersecting address lines, such as is well known in the art; a large number of through holes are formed adjacent to the address lines In the base of the terminal; and-a device forming a conductive path, through each hole on the base to each end of the address line, to provide electrical wiring of each address line to the voltage drive component of the drive circuit. Preferably, the electroluminescent film of the display panel includes the thick film dielectric layer of the present invention. This dielectric layer enables the lamination to be produced from the rear substrate and looking forward. It also enables the through-hole connector and the thick film circuit pattern to be connected to the voltage formed by the interleaved circuit manufacturing step of the electroluminescent stacking step Drive components and address lines. Such a step cannot be easily achieved in the fabrication of conventional electroluminescent laminations, because this layer is deposited on the front display glass that does not withstand temperature and burns a thick film of conductive paste. According to the present invention, the voltage driving assembly or the entire driving circuit can be formed on the rear (reverse side) of the rear substrate. The use of through-hole connectors provides more direct and highly reliable interconnection wiring between address lines and drive circuits. Since there is no need for an invalid periphery around the display panel required in conventional technology. This facilitates the assembly of large displays from individual display panels without dark borders between the modules. -18 ™ clothing paper scale is applicable to China National Standard (CNS) A4 specifications (2) 0 X 21) 7 mm) 82. 5. 20,000 --------- Γ ---'---- --f ----- installed ------ ordered ------ for (please read the precautions on the back and then write this page) 32〇8jf5 A6 B6 Clear instructions, five-sided cross-section The structure of the suggested structure Η '«is shown in Figure 1. The figure below shows the structure of the stack. The stack 1 is the figure 2. Routine implementation of the stacking of electricity and detailed description of the details of the pole group electric-Ί drive the pressure along the electricity is a three-way voltage electric circuit electric drive ηρ «to the line to connect the gas and electricity is located at the site ; It is the type diagram with the figure 4 cut off and protruding; the detailed back base of the detailed base of the road map TV dynamic subduction; the back base of the back base of the detailed base body is printed in Group 5; The figure drives the line-up and line-up pads and the polar row above the front 1 afln base and then printed on 0 S3 is 6 pictures (please read the precautions on the back before writing this page) Super figure road The electric drive 50 is in production, and the printed view is better than the type 7 picture.
及 型 圖 路 電 ., 動圖 驅視 的俯 上之及 之型 ., 7 圖圖 及璃視 5 玻俯 圖封的 在密型 製的圖 印型線 地圖極 佳化電 較強行 是墊是 8 襯 9 圖路圖 S 9 -^.And type map road electricity., Moving picture-driven up-and-down type., 7 figure picture and glass view 5 glass upside-down seal in a densely-made map-printed line map. Optimized electricity is more strongly a pad It is 8 lined 9 figure road map S 9-^.
A 經濟部中央標準局I®工消費合作社印製 明 説0 圖 諾 是 的 ο I 1 Ο 祸 圖圖施 視奮 圖 及 線 行 俯 的 線 接 氣 電 製 印 所 間 墊 襯 ΙΊ /1 一 電 的後 質 C 介成 層構 2 所 的側 明後 發的 本上 I 2 插 1 根體 合基 併由 明是 説10 解片 圖« 中 0 ο 2 1 及 Η 1 β 圖 Ε -11 種 本紙張尺度適用中國國家標準(CNS) f 4規格(210 X 297公釐) 82. 5. 20,000A Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, I® Industrial and Consumer Cooperatives, which clearly states that 0 is the promise of the map. I 1 Ο The map is a map between the Fentu and the line-to-line electrical and electronic printing houses. ΙΊ / 1 1 The electric back mass C is stratified into a layered structure 2 and the original I 2 is inserted with a root synth and it is said to be 10. The paper size is applicable to the Chinese National Standard (CNS) f 4 specifications (210 X 297 mm) 82. 5. 20,000
經濟部中央標準局®:工消費合作社印K A6 B6 五、發明説明(18 ) 極層14是形成在基體12上。如圖所示,對顯示器應用, 後電極Η由集中在基體12上及自基體遴綠間隔的導電位 址線的列所構成。電觸點接頭16自電極14突出。第1厚 介質層1 8形成在後電極1 4之上,隨後跟著第2較薄介質 層20。磷層22形成在第2介質層20之上,隨後跟著前、 透明電極2 4。前電極層2 4所示在圖中為緊密的,但實際 上用於顯示器應用,其由布置成垂直於後電極1 4的位址 線的位址線行構成。畳片10以透明密封層26封包而防止 濕氣滲透。電氣觸點28附在第2電極24。 E L叠片1 0以連接A C電源到電極觸點1 6、2 8來工作。根 據本發明的ELSH具有應用成燈或顯示器,雖然最常發 現其應用在顯示器中。 對擅於本技術者可了解進一步插置層能包括在叠片10 中而沒有脫離本發明。 根據本發明在£1叠片中製作雙介質層的方法現將以詳 細的材料及過程步驟來說明。 叠片10是自後到前(視)側來製作。叠片10是形成在 適當的基體12上。基體12較佳地是陶瓷,其能耐用於介 質層的高燒結溫度(典型地lootrc)。氣化鋁是最佳的 〇 第1後電極1 4是沉積在基體1 2上。許多技術及材料以 用於設計位址線的薄列而眾所周知。較佳地,利用一種 其可在要印製湖的區域清洗掉的乳化劑,自銀/铂糊來 -2 0 - 本紙張夂度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 ^ ;------^-----裝------、11------^ (請先閲讀背面之注意事項再塡寫本頁) 經濟部中央標準局8工消費合作杜印製 A6 B6 五、發明説明(19) 絲網印製導電金屬位址線。之後,乾燥並且火燒此糊》 代替性的,後電極1 4可以形成自其他昂貴金屬諸如金、 或其他金屬諸如鎘、鎢、鉬、鉅或此等金靥的合金。 第1介質層1 8以已知的厚膜技術沉積在後電極上。第 1介質層18較佳地形成自鐵電材料,最佳地一種具有鈣 鈦礦結晶構造,而提供相較於磷層2 2的高介質常數。此 材料對此畳片在合理的工作溫度一般20-100 °C範圍將具 有最小500的介電常數。更佳地,第1介質層的介質常 數是1000或更大^用於第1介質層18的範例材料包括 PbNbO 3 s BaTiO 3 , S rT i 0 3 , PbTiO 3 . PbNbO 3 尤佳 〇 擅於本技術的人將了解,選擇用於第1介質層18的一 種陶瓷材料(即,一種絶緣材料其具有一熔點充分高而 允許畳片其他層的備製),所選擇材料已知具有高介質 常數及介質強度。此等是此材料的本質性質,然而,價 值一般在於粒狀材料,其呈現密緻、高結晶形式。所使 用的沉積技術能變更此等性質《關於材料的介質常數, 厚膜沉積技術之後,隨著以高溫燒結,大致會保存大粒 子大小(在約1徹米到2徹米的範圍),及密緻結構中 高度的結晶性,以便不會自起始材料重大地降低介質常 數。同樣地,高介質強度是利用厚膜沉積隨後以高溫燒 結來達成〇然而,此層的介質強度必需最终地以施加工 作電壓跨接於完整的疊片來量度。 -21- 本紙張尺度適用中國國家標準(CNS)甲4規恪(2丨0 X四7公釐) 82. 5. 20,000 --------T---.-----1-----裝------*玎------^ (請先閲讀背面之注意事項再塡寫本頁) 經濟部中央標準局S工消費合作社印製 A6 B6 五、發明説明(2〇) 厚膜沉積技術如上述發表,是眾所周知的技術。以此 種技術,介質材料沉積在後電極層1 4之上到具有大致均 勻覆蓋的期望厚度,厚膜沉積技術經常用於在陶瓷基體 上的電子電路的製造。絲網印製是最佳的技術。商用現 貨的介質猢能以糊製造廠商所述的建議燒結步驟來使用 。糊必要選擇或配方成允許高溫,典型1 0 0 0 °C ,燒結。 然而,其他技術能達到相同結果。一種替代的厚膜技術 是使用介質成一 ”綠帶(G !> e e η T a p e ) ”,致使其能設計在 後電極14上。綠帶包含聚合基體内的介質粉沫,其在隨 後的燒結過程期間能燃燒掉。此帶在燒結前是可撓性的 ,而能在電極層14上軋棍或壓實。在絲網印製的介質上 此綠帶之一可能的優點是當其一火燒,其也許具有更少 孔而略微更密緻》目前,綠帶介質沒有廣泛可用的《介 質的厚膜糊亦能軋棍塗層在後電極層14上,或以刮刀片 來施加。更複雜的技術,諸如,介質粉沫的靜電沉積隨 後在此粉沫失掉其電荷之前立即燒結。 如所指示,第1介質層1 8較佳地自糊來絲網印製。沉 積成多層隨後在高溫燒結是較佳的以便逹到低氣孔性、 高結晶性及最小裂化。燒結溫度視所使用待別材料而定 ,但不超過後電極1 4或基體1 2能而的溫度β 1 0 0 (KC的溫 度對多數電極材料是典型最高的。第1介質層1 8的厚度 將随其介質常數及磷層2 2的介質常數及厚度以及第2介 質層2 0而變動。通常,第1介質層1 8厚度在1 0到:i 0 0徹 -11- 本紙張尺度適用中國國家標準(CNS)平·!規格(2丨0 X 297公缝) 82. 5. 20,000 --------^---------^ -----裝------訂------^'-7 (請先閲讀背面之注意事項再塡寫本頁) 經濟部中央標準局8工消費合作社印製 A6 B6 五、發明説明(21 ) 米的範圍内,較佳地2 0 - 1 5 0徹米,且最佳3 0 - 1 0 0徹米。 一般,可了解,建立介質層的介質厚度及介質常數的 準則是計算的以便在最小工作電壓提供適當的介質強度 。此準則和下文所述是相關的《已知約在ϋ . 2及2 . 0徹米 之間磷層厚度(di )典型範圍,約在5及10之間磷層介 質常數k i範圍以及約1 0 6到1 0 7 V / οι介質層介質強度範 圍,下列關傷及計算可以使用來決定本發明介質層的典 型厚度(d2 )及介質常數(k2 )值。此等關傜及計算可以 用做指南來決定d 2及k 2值,沒有脱離本發明的涵蓋範 圍,如果上述所發表典型範圍充分變更。 跨接於包含在兩導電電極之間所包夾均勻介質層及均 勻非導電磷層兩層的施加電壓V是以方程式1來産生: V = E 2 * d 2 + E 1 * d 1 (1) 其中: E2是介質層内的電場強度;Central Bureau of Standards® of the Ministry of Economy®: K A6 B6 printed by the Industrial and Consumer Cooperative Society V. Description of Invention (18) The pole layer 14 is formed on the base 12. As shown in the figure, for display applications, the rear electrode H is composed of a row of conductive address lines concentrated on the base 12 and spaced green from the base. The electrical contact joint 16 protrudes from the electrode 14. The first thick dielectric layer 18 is formed on the back electrode 14 followed by the second thinner dielectric layer 20. The phosphor layer 22 is formed on the second dielectric layer 20, followed by the front and transparent electrodes 24. The front electrode layer 24 is shown compact in the figure, but is actually used for display applications, and it consists of a row of address lines arranged perpendicular to the address lines of the rear electrode 14. The sheet 10 is enclosed with a transparent sealing layer 26 to prevent the penetration of moisture. The electrical contact 28 is attached to the second electrode 24. EL stack 10 works by connecting AC power to electrode contacts 16 and 28. The ELSH according to the invention has applications as lamps or displays, although it is most often found in displays. It will be appreciated by those skilled in the art that further intervening layers can be included in the laminate 10 without departing from the invention. The method of making a dual dielectric layer in a £ 1 laminate according to the present invention will now be described with detailed materials and process steps. The laminated sheet 10 is produced from back to front (view) side. The lamination 10 is formed on a suitable substrate 12. The substrate 12 is preferably ceramic, which is resistant to the high sintering temperature (typically lootrc) used for the dielectric layer. Vaporized aluminum is optimal. The first rear electrode 14 is deposited on the substrate 12. Many techniques and materials are well known for designing thin columns of address lines. Preferably, use an emulsifier that can be washed away in the area where the lake is to be printed, from silver / platinum paste to-20-the paper size is applicable to China National Standard (CNS) A 4 specifications (210 X 297 %) 82. 5. 20,000 ^; ------ ^ ----- installed ------, 11 ------ ^ (Please read the precautions on the back before writing this page ) The Central Bureau of Standards of the Ministry of Economic Affairs, Industrial and Consumer Cooperation, Du Printing A6 B6 V. Description of the Invention (19) Screen printing of conductive metal address lines. Afterwards, the paste is dried and fired. Alternatively, the back electrode 14 may be formed from other expensive metals such as gold, or other metals such as cadmium, tungsten, molybdenum, giant or alloys of gold and other gold. The first dielectric layer 18 is deposited on the rear electrode by a known thick film technique. The first dielectric layer 18 is preferably formed from a ferroelectric material, preferably one having a perovskite crystal structure, and provides a high dielectric constant compared to the phosphor layer 22. This material will have a minimum dielectric constant of 500 at a reasonable operating temperature range of 20-100 ° C. More preferably, the dielectric constant of the first dielectric layer is 1000 or more. Exemplary materials for the first dielectric layer 18 include PbNbO 3 s BaTiO 3, S rT i 0 3, PbTiO 3. PbNbO 3 is particularly good. Those skilled in the art will understand that a ceramic material selected for the first dielectric layer 18 (ie, an insulating material having a melting point sufficiently high to allow preparation of other layers of the wafer) is known to have a high dielectric Constant and medium strength. These are the essential properties of this material, however, the value is generally in granular materials, which appear in a dense, highly crystalline form. The deposition technique used can change these properties. "About the dielectric constant of the material. After the thick film deposition technique, as the sintering at high temperature, the size of large particles (in the range of about 1 to 2 Chemi) will be preserved, and High crystallinity in the dense structure so that the dielectric constant is not significantly reduced from the starting material. Similarly, high dielectric strength is achieved by thick film deposition followed by high temperature sintering. However, the dielectric strength of this layer must be finally measured across the complete lamination with an applied working voltage. -21- This paper scale is applicable to China National Standard (CNS) Grade 4 (2 丨 0 X 47mm) 82. 5. 20,000 -------- T ---.----- 1 ----- Installed ------ * 玎 ------ ^ (Please read the precautions on the back before writing this page) A6 B6 printed by S Industry and Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 2. Description of the invention (2) The thick film deposition technology is published as mentioned above and is a well-known technology. In this technique, a dielectric material is deposited on the back electrode layer 14 to a desired thickness with substantially uniform coverage. Thick film deposition techniques are often used in the manufacture of electronic circuits on ceramic substrates. Screen printing is the best technique. Commercially available media can be used with the recommended sintering steps described by the paste manufacturer. The paste must be selected or formulated to allow high temperature, typically 1000 ° C, and sintered. However, other technologies can achieve the same result. An alternative thick film technique is to use a dielectric into a "green band (G!> E e η T a p e)" so that it can be designed on the back electrode 14. The green belt contains the dielectric powder in the polymer matrix, which can be burned off during the subsequent sintering process. This belt is flexible before sintering and can be rolled or compacted on the electrode layer 14. One of the possible advantages of this green tape on screen-printed media is that when it burns, it may have fewer holes and be slightly denser. At present, green tape media does not have widely available "thick film pastes The roller can be coated on the back electrode layer 14 or applied with a doctor blade. More complicated techniques, such as the electrostatic deposition of dielectric powder, then sinter immediately before the powder loses its charge. As indicated, the first dielectric layer 18 is preferably screen printed from paste. It is preferable to deposit into multiple layers and then sinter at high temperature to achieve low porosity, high crystallinity, and minimum cracking. The sintering temperature depends on the materials to be used, but does not exceed the temperature β 1 0 0 (the temperature of KC is typical for most electrode materials. The temperature of the first dielectric layer 18 is The thickness will vary with its dielectric constant and the dielectric constant and thickness of the phosphor layer 2 2 and the second dielectric layer 20. Usually, the thickness of the first dielectric layer 18 is between 10 and 10: i 0 0 through -11- the paper size Applicable to China National Standards (CNS) Flat! Specifications (2 丨 0 X 297 male seam) 82. 5. 20,000 -------- ^ --------- ^ ----- ------ Subscribe ------ ^ '-7 (Please read the precautions on the back before writing this page) A6 B6 printed by the 8th Industry and Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of invention (21 ) Within the range of meters, preferably 2 0-1 5 0 Chemi, and most preferably 3 0-1 0 Chemi. Generally, it can be understood that the criteria for establishing the dielectric thickness and dielectric constant of the dielectric layer are calculated in order to Provide the appropriate dielectric strength at the minimum operating voltage. This criterion and the following are related to the "typically known phosphorous layer thickness (di) range between ϋ. 2 and 2.0 cm, approximately between 5 and 10. The dielectric constant ki range of interphosphorus layer is About 10 6 to 1 0 7 V / οι dielectric layer dielectric strength range, the following cut-offs and calculations can be used to determine the typical thickness (d2) and dielectric constant (k2) values of the dielectric layer of the present invention. Such calculations and calculations It can be used as a guide to determine the values of d 2 and k 2 without departing from the scope of the present invention, if the typical range published above is sufficiently changed. It is connected across the uniform dielectric layer and uniform non-uniformity between the two conductive electrodes. The applied voltage V of the two layers of the conductive phosphor layer is generated by Equation 1: V = E 2 * d 2 + E 1 * d 1 (1) where: E2 is the electric field strength in the dielectric layer;
Ei是磷層内的電場強度; (1 2是介質層厚度;及 d 1是磷層厚度。 在此等計算中,電場強度方向是垂直磷層及介質層的 介面。方程式1 ,對施加電壓在磷層内電場強度充分地 高使得磷層開始電氣崩潰而裝置開始發射光的臨限電壓 之下,Μ持真實性。 由電磁理論,垂直於具有不同介質常數的兩絶緣材料 -2 3 - 本紙張尺度適用中國國家標準(CNS> T 4蜆格(210 X 297公釐) 82. 5. 20,000 --------1----Γ----------裝-------玎------f (請先閲讀背面之注意事項再塡寫本頁) 3208J5 A6B6 經濟部中央標準局3工消費合作社印製 五、發明説明(22 ) 之間的一介而的電位移分量D是連绩地交叉通過此介面 。材料中的電位移分量定義成為介質常數及同方向的電 場分量的積。由此關係,得到兩層構造中介面的方程式 2 : ^ E 2 = ki *Ei (2) 其中: k 2是介質材料的介質常數·,及 k 是磷材料的介質常數^ 方程式1及2能結合産生方程式3 : V = (ka *d2 /k2 +di )*Εχ (¾ 為降低臨限電壓,方程式3内第1項必需如實際地小 。第2項是以選擇磷厚度而使磷先輸出最大的需求來固 定。對此計算,第1項取為第2項的大小的10分之1 。 代換此條件入方程式3産生方程式4 : d2 /k2 = O.l^di /ki (4) 根據磷性質,方程式4建立介質層厚度對其介質常數 的比值〇此厚度決定當磷層在臨限電壓之上變成導電時 ,無關於此層介質強度充分來維持整個外施電壓的需求 。此厚度利用方程式5來計算: d 2 = V/S ⑸ 其中: S是介質材料的強度。 利用上逑方程式及對(1 1、k 1及S的合理數值提供發 -2 4 - --------^----^------J.-----裝------1T------J (請先閲讀背面之注意事項再塡寫本頁) 本紙張又度遑用中國《家標準(CNS)甲4规格(210 X 297公釐) 82. 5. 20,000 經濟部t央標準局員工消費合作杜印¾ A6 B6 五、發明説明(23) 表在此規格及申請專利範圍内的介質層厚度及介質常數 的範圍。 如上述,第2介質層20是不需要,如果第1介質層22 提供鄰接於磷層的表面是充分平滑的(即,隨後沉積磷 層在規定激勵電壓下大致均勻地發光),而且可相容於 磷層22。一般,表面起伏變動在約1G00微米範圍約0.5 徹米(其約相等於一像素寬度)是充分的。在其距離範 圍Q.1-Q.2微米的表面起伏是更佳。如果第1層18提供 充分平滑的表面,但沒提供所期望相容性於磷層22,刖 例如,以薄膜技術也許進一步的材料層(較佳地,但, 不需要介質材料)可以添加來提供相容性。 如果第2介質層20是需要的,則其形成在第1介質層 18上。第2層2G可具有較第1介質層18低的介質常數, 而且典型地形成為非常較薄層(較佳地大於2微米,而 更佳地2-10微米)。第2介質層的期望厚度一般是平滑 度的函數,即此層可儘量薄,衹要達到一平滑表面。為 提供平滑表面較佳使用溶凝膠沉積技術,隨後以髙溫燒 結。溶凝膠技術在此技術中是眾所了解的,例如請看 1 9 8 9年金屬學院的R . W .強尼斯(J ο n e s )的”溶凝膠基本原 理"。一般,溶凝膠過程能使材料在顯示溶液之前以分 子階混合在溶膠内,一者為膠性凝膠或者為聚合大分子 網,同時乃保持溶劑。此溶劑,當去除時,餘留具有高 階的細氣孔的固體,因此,提高表面自由能量的值,使 -2 5 - --------^----^------1 -----裝------ir------^ (請先閱讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 經濟部中央標準局貝工消費合作杜印¾ A6 B6 五、發明説明(24 ) 得此固體能在利用大部份其他技術所能得到的較低的溫 度下燒結且密緻化。 溶凝膠材料以一種方式來沉積在第1介質層1 8上來逹 到平滑表面。除提供平滑表面之外,此溶凝膠過程易於 填滿已燒結厚膜層内的氣孔。自旋沉積或液浸是最佳的 。此等是在半導體工業中使用多年的技術,主要在照像 石版印刷過程。對自旋沉積,溶膠液滴在高速自轉的第 1介質層18上,典型地數仟RPM (轉/分)β如需要, 溶膠可以成幾階段來沉積。層20的厚度可以變動溶凝黏 度及變動自動速度來控制β自轉之後,一薄層的濕溶凝 膠形成在表面上。溶凝膠一般在小於1000 °C下燒結而形 成陶瓷表面。溶膠亦可以液浸來沉積。要塗層的表面液 浸在溶膠中,而然後以定速抽出,通常十分缓慢。此層 的厚度以變動溶膠黏度及抽出速度來控制。溶膠亦可絲 網印製或噴塗塗層,雖然其更難於控制使用此等技術的 層的厚度。 用於第2介質層20的材料較佳地是鐵電陶瓷材料,較 佳地具有鈣鈦礦結晶構造,提供高介質常數。此介質常 數較佳相似於第1介質層材料,以便避免跨接於兩介質 層18, 2G的電壓變動。然而,以較薄層應用在第2介質 層2 (),可以使用介質常數低到約2 ϋ ,但較佳將是大於 1 0 0 〇範例材料包括結酸鈦酸鉛(Ρ Ζ Τ )、結酸鈦酸鉛鑭 (PLZT)、及Sr、Pb及Ba的鈦使用在第1介質層18,ΡΖΤ -2 6 - --------Η---.------f-----裝------,玎------ (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4現格(2丨Ο X ‘297 W竑) 82. 5. 20,000 經濟部中央標準局8工消費合作社印$ A6 B6 五、發明説明(25 ) 及P L Z T是最佳的。 Ρ Ζ Τ或P L Ζ Τ較佳地是以自旋沉積來沉積成溶凝膠,隨 後在少於約6 0 0 °C下燒結而形成適合於次層的沉積的平 滑陶瓷表面。 要沉積的次層典型是磷層,然而,如上所述,可能地 在本發明範圍之内包括在第2介質層20上面進一步的層 而進一步改善和磷層之介面。例如,可以使用眾所周知 而提供良好注入性及可相容性的薄膜層材料。 磷層2 2之沉積是以眾所周知的薄膜沉積技術,諸如: 以電子束蒸發器内的真空蒸發、濺散法等。較佳的磷材 料是Z n S : Μ η ,但己知其他磷發射不同彩色的光。磷層 22典型具有約0.5微米厚度及約5到10之間的介質常數 〇 磷質22之上進一步的透明介質層是不需要的,但如果 有需要亦可以包括。 前電極34是直接地沉積在磷層22之上(或進一步的介 質層,如果包括的話)。前電極是透明的,且較佳地以 眾所周知的薄膜技術,諸如電子束蒸發器内的真空蒸發 自氣化絪錫UTO)來形成。 曼片10典型地經退火,然後以密封層26,諸如玻璃, 密封。 根據本發明自後到前,具有典型厚度值的較佳的《片 如下: -2 7 - --------;----7------ί -----裝------.玎------Μ (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公¢) 82. 5. 20,000 320815 A6 經濟部中央標準局貝工消費合作杜印製 _B6 五、發明説明(Μ ) 基體層-氣化鋁 後電極-A g / R t位址線-1 0微米 第1介質層-鈮酸鉛—3 0微米 第2介質層一鉻酸鈦酸鉛一 2徹米 磷層—ZnS: Μη — 0.5撤米 前電極一ΙΤ0-0.1徹米 密封層—玻璃—10 — 20微米 在較大EL顯示器中,各層厚度可以變動。例如,溶凝 膠層厚度典型地增加到約6 - 1 0徹米來提供期望的平滑度 β同樣地,在較大顯示器中ΙΤ0層厚度也可增加到0.3撒 米止。 根據本發明電發光叠Η前及後位址線到電壓驅動電路 的接線較佳地是利用後基體中的通孔來逹成,最佳地, 此EL叠片包括本發明的厚介質層,雖然不是必需的。 電壓驅動電路包括電壓驅動組件(典型指的是高壓驅 動晶片),其輸出連接到後及前電極個別的列及行位址 線,以便根據影像輸入倍號選擇地起動像素。電壓驅動 電路及組件是此技術中一般眾所周知的。為圖解説明本 發明,通孔接線提供於以已知回流焊接技術來表面黏箸 的已知密封的高壓驅動晶片。此種高壓驅動晶片以習用 對稱脈波驅動設計及不對稱脈波驅動設計有名。 然而,搏於本技術之人會認知,待別驅動電路或驅動 組件可以變,且因而會自然地影嚮提供來接線到驅動電 (請先閱讀背面之注意事項再填寫本頁) 丨裝- 訂. 本紙張尺度適用中國國家標準(CNS)甲4規格(2丨Ο X 297公釐) 82. 5. 20,000 經濟部中央標準局B工消費合作社印製 A6 B6 五、發明説明(27 ) 路的電路圖型及通孔圖型。本發明具有應用不管整體驅 動電路或只其部份要組裝在後基體上。例如,替代使用 高壓密封晶Η ,利用習用的模Η固定方法使用無包裝矽 片(晶Η )在基體上,以及利用習用線搭接技術來連接 到基體上驅動電路是可能的。在此情形中,驅動晶Η將 在基體上佔很小區域,而在基體上安置所有驅動電路將 是可能的。此結果是一種超薄顯示板可以直接介面到影 像信號及直接連接到dc電源。此種顯示器將有用於需要 顯示器的超薄可攜式産品。當然,組裝驅動電路在基體 後面上的能力是嘗試在顯示器的總體大小,較大顯示器 提供更多空間用於直接在基體後面上的驅動電路。 本發明電路接線觀點的圖解説明在圖3 - 10中。如上 指示,用來組裝高壓驅動晶片3 0在後基體的反面上持別 通孔及電路圖型供做圖解説明目的。所選擇待別的晶片 是S u p e r t e X Η V 7 0 2 2 P J晶片連接到列位址線1 4 ,及 Supertex HV8308PJ及 HV8408PJ ( Supertex公司位在美 國加州,珊尼維爾(S Li η n y v a I e ))用來接線到行位址2 4 。後二者的晶片差異是其一的引線圖型是另一的引線 圖型之反射鏡像。 參照圖示,E L «片1 0較佳地,但不是必需,以本發明 2層介質層18、20來製作,而且如此以自後基體12向前 視側來製作。後基體1 2在圖型中纘有通孔3 2致使其將接 近位址線1 4、2 4 (隨後形成的)端。替代地,額外的通 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用申國國家標準(CNS) f 4規格(210 X 297公釐) 82. 5. 20,000 經濟部中央標準局8工消費合作社印製 A6 B6 五、發明説明(28) 孔能沿著位址線提供成間隔關係。此將有用於提供接線 到具有高電阻度的前η’ 〇位址線《圖4圖形,以沿箸較 長尺寸的列位址線(後電極)1 4以及沿著較短尺寸的行 位址線(前電極)2 4 ,提供接線到矩形基體1 2上的E L曼 片。 通孔3 2較佳地以雷射來形成。通孔3 2因雷射鑽孔過程 的性質典型地在一側上較寬,此側經選擇為後或反面側 而使流動導電材料易於進入通孔内。 用於EL疊片的基體12必需是能耐隨後處理步驟中所經 歴的溫度。典型所使用的基體是提供充分剛性來支架此 疊片及穩定在或大於850 °C的溫度來耐隨後用於厚膜糊 及溶凝膠材料的發火燒結步驟。基體對雷射光亦將是不 透明,而允許以雷射鑽孔來形成通孔32。最後,基體對 使用在隨後步驟的厚膜糊要提供良好黏著性。可以使用 結晶陶瓷材料及不透明玻璃材料。氣化鋁是持佳的。 導電材料的電路圖型34在基體12的後側上印製成圖5 所示的圖型。此步驟中,導電材料是以要討論的一種方 式抽穿過通孔3 2 ^基體1 2後側上電路圖型3 4是由各通孔 3 2周圍的後連接器襯墊3 6、高壓驅動晶片(未顯示)輸 出用的晶Η連接器襯墊3 8、用來接線到驅動電路(未顯 示)的其他電路的進一步連接器襯墊(未標示)、及所 示許多連接器襯墊之間的電氣引線(未標示)等來構成 (請先閲讀背面之注意事項再塡寫本頁) 丨裝- ^ -30- 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 A6 B6 經濟部中央標準局S工消費合作社印製 五、發明説明(29) 導電材料較佳地以絲網印製所施加的導電厚膜糊。銀 /鉑厚膜湖是較佳的。 為經過各通孔32而形成導電通路,當電路34印製在後 側時,真空施加在基體1 2的前側上。此較佳地是基體1 2 及真空之間安置基體12在具有鑽孔成圖4圖型孔的主板 的真空桌上來達成。主板内的孔是對準於或略徹大於在 基體12的孔。不施加真空,直到電路印製為止以確保均 勻地施加真空。真空是連績的直到導電材料抽穿過到基 體的前倒》在此點,小量的導電材料抽穿過到基體12的 前倒,而塗層通孔壁,然後,根據已知程序火燒厚膜糊 〇 按照此步驟,電路襯墊強化圖型4 2較佳地,但不必需 要的,印製成圖7所示。同樣的導電材料,印製及火燒 步驟如下。 列位址線1 4及連接器襯墊4 Q a及4 0 b較佳地以絲網印製 諸如銀/鉛糊的厚膜導電糊在基體12的前側上來形成。 圖6所示的位址線圖型包括沿著基體12長度延伸及在前 (列)連接器襯墊4 0 a終端的列。此相同步驟期間,前 (行)連接器襯墊印製來經通孔3 2提供行位址線到驅動 電路的最後接線。導電糊較佳地如上,以自基體的後電 路側所施加的真空抽穿過通孔。 當形成穿過穿孔3 2導電通路的裝置已如上説明而要自 厚膜導電糊形成時,導電通路亦形為電鍍通孔,或成為 -3 1 - --------τ---5-----1-----裝------·玎------Μ (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家櫺準(CNS)甲4規格(210 X 297公货) 82. 5. 20,000 A6 B6 經濟部中央標準局3工消費合作社印货 五、發明説明(3〇) 以無電極電鍍形成的通孔,如此技術中眾所周知的,祇 要電鍍層適當地黏著到基體,而且隨後的層黏著到己電 鍍的導體。 然後,本發明厚膜介質層1 8較佳地以上述的方式形成 並且火燒。 然後,基體後電路側較佳地以後密封膠4 4來密封,例 如,以厚膜玻璃糊來絲網印製,餘留用來高壓驅動晶片 及連接器插針45到其他驅動電路(未顯示)的附接所露 出的連接器襯墊。密封圖型顯示在圖8中。 然後,EL#片如上述完成具有溶凝膠層20、磷層22、 及前行位址線2 4 ^圖9中所示前行位址線2 4用的圔型由 横跨基體12的寬度终端接近前(行)連接器襯墊4G的平 行行所構成。 行位址線2 4及前(行)連接器襯墊4 0之間電氣互連接 線46,如果需要,提供用做可靠的電氣接線。此等較佳 地以經由圖10所示圖型中的網板印製諸如銀的導電材料 來形成。 如前述的前密封層26是提供來防止濕氣滲入。 根據本發明,E L #片1 0的前I T 0位址線2 4較佳地以雷 射刻畫來形成。有關本發明較佳的E L疊片1 0的雷射刻番 技術説明如下文。然而,請了解雷射刻畫技術具有較廣 泛應用在圖型具有上覆蓋及在下面層的平面《片。就此 而論,I T 0及磷層2 4、2 2是圖示没有吸收雷射光到任何 -3 2 - ---------Μ---·------^-----裝------訂------為 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公货) 82. 5. 20,000 五、發明説明(31) A6 B6 酸 C 結層 及面 18下 層在 質的 介光 2 鉛射02 酸雷 S 鈮收括 膜吸包 厚有料 而示材 ,圖型 層是典 蓋 2 的 覆層體 上膠導 的凝明 度溶透 程的做 的鉛用 致酸他 大鈦其 及 明,光刻明 }料 透而射燒透 度材 光因雷地的 寬, 見。的接中 C 及散 可料長間體器度擴 對材波層導示深互 是的内蓋半顯的相 層明區覆型EL割間 蓋透線上圖及燒之 : 覆不外而在 、·ί 層。持 上光紅,用池解少意保 ,見或刻應電分減注需 中可光燒泛陽及及需必 文對見地廣太度,必僳 本是可接有、精® 度關 義層譜直具器的分厚列 廣面頻能法示畫炸的下 明下磁料方顯刻爆層 , 發在電材刻晶射的及片 本而在面燒液雷層質壘 , ,有下射 、制免性層 般料具在雷層控避些兩 一 材用,此電為而某對 的利束。導 ,的Ei is the electric field strength in the phosphor layer; (12 is the thickness of the dielectric layer; and d 1 is the thickness of the phosphor layer. In these calculations, the direction of the electric field strength is the interface between the vertical phosphor layer and the dielectric layer. Equation 1 applies the applied voltage In the phosphor layer, the electric field strength is sufficiently high so that the phosphor layer begins to collapse electrically and the device starts to emit light below the threshold voltage, M holds authenticity. By electromagnetic theory, perpendicular to two insulating materials with different dielectric constants 2 3- This paper scale is applicable to the Chinese National Standard (CNS> T 4 Clam (210 X 297 mm) 82. 5. 20,000 -------- 1 ---- Γ ---------- Installed ------------- f (please read the precautions on the back before writing this page) 3208J5 A6B6 Printed by the Central Bureau of Standards of the Ministry of Economics 3 Industrial and Consumer Cooperatives V. Invention Instructions (22) The electrical displacement component D between them intersects the interface successively. The electrical displacement component in the material is defined as the product of the dielectric constant and the electric field component in the same direction. From this relationship, the equation of the interface in the two-layer structure is obtained 2: ^ E 2 = ki * Ei (2) where: k 2 is the dielectric constant of the dielectric material, and k is the dielectric of the phosphor material Number ^ Equations 1 and 2 can be combined to produce Equation 3: V = (ka * d2 / k2 + di) * Εχ (¾ To reduce the threshold voltage, the first term in Equation 3 must be as small as practical. The second term is Choose the thickness of phosphorus to make the phosphorus output the largest demand to be fixed. For this calculation, the first item is taken as 1/10 of the size of the second item. Substituting this condition into Equation 3 yields Equation 4: d2 / k2 = Ol ^ di / ki (4) According to the nature of phosphorus, Equation 4 establishes the ratio of the thickness of the dielectric layer to its dielectric constant. This thickness determines that when the phosphorus layer becomes conductive above the threshold voltage, the dielectric strength of this layer is sufficient to maintain the entire The requirement of applied voltage. This thickness is calculated using Equation 5: d 2 = V / S ⑸ where: S is the strength of the dielectric material. Using the above equation and the reasonable values of (1 1, k 1 and S provide 2 4--------- ^ ---- ^ ------ J .----- installed ------ 1T ------ J (please read the back first (Notes on this page will be written on this page) This paper again uses the Chinese National Standard (CNS) A 4 specifications (210 X 297 mm) 82. 5. 20,000 Ministry of Economic Affairs t Central Standards Bureau employee consumption cooperation Du Yin ¾ A6 B6 V. Description of invention ( 23) The range of the thickness and dielectric constant of the dielectric layer within the scope of this specification and patent application. As mentioned above, the second dielectric layer 20 is not required, if the surface of the first dielectric layer 22 provided adjacent to the phosphor layer is sufficiently smooth (That is, the subsequently deposited phosphorous layer emits light substantially uniformly under a prescribed excitation voltage), and is compatible with the phosphorous layer 22. In general, the fluctuation of the surface fluctuations in the range of about 1G00 micrometers about 0.5 cm (which is approximately equal to the width of one pixel) is sufficient. The surface relief in the range of Q.1-Q.2 microns is better. If the first layer 18 provides a sufficiently smooth surface, but does not provide the desired compatibility with the phosphor layer 22, for example, a further material layer (preferably, but without the need for a dielectric material) using thin film technology can be added Provide compatibility. If the second dielectric layer 20 is required, it is formed on the first dielectric layer 18. The second layer 2G may have a lower dielectric constant than the first dielectric layer 18, and is typically formed as a very thin layer (preferably larger than 2 microns, and more preferably 2-10 microns). The expected thickness of the second dielectric layer is generally a function of smoothness, that is, this layer can be as thin as possible, as long as a smooth surface is achieved. To provide a smooth surface, it is preferable to use lyogel deposition technique followed by high temperature sintering. The technique of dissolving gel is well known in this technology. For example, please see R.W. Jonnes (J ο nes), "The Basic Principles of Dissolving Gel" in 1989. The glue process enables the material to be mixed in the sol in a molecular order before displaying the solution, one of which is a colloidal gel or a polymeric macromolecular network, while maintaining the solvent. This solvent, when removed, leaves high-order pores Solid, therefore, increase the surface free energy value so that -2 5--------- ^ ---- ^ ------ 1 ----- install -------- ir ------ ^ (Please read the precautions on the back before writing this page) The paper size is applicable to China National Standard (CNS) A 4 specifications (210 X 297 mm) 82. 5. 20,000 Central Ministry of Economic Affairs Bureau of Standards, Beigong Consumer Cooperation Du Yin ¾ A6 B6 V. Description of the invention (24) It is obtained that this solid can be sintered and densified at a relatively low temperature that can be obtained by using most other technologies. It can be deposited on the first dielectric layer 18 to a smooth surface. In addition to providing a smooth surface, this lysing process easily fills the pores in the sintered thick film layer. Spin deposition or liquid immersion is optimal. These are techniques used in the semiconductor industry for many years, mainly in the photolithography process. For spin deposition, sol droplets are deposited on the first medium layer 18 rotating at high speed, Typically several thousand RPM (revolutions per minute) β. If necessary, the sol can be deposited in several stages. The thickness of layer 20 can be adjusted by varying the viscosity of the coagulation and the automatic speed to control β rotation. A thin layer of wet solution gel is formed On the surface, the lyogel is generally sintered at less than 1000 ° C to form a ceramic surface. The sol can also be deposited by liquid immersion. The surface to be coated is immersed in the sol and then drawn out at a constant speed, usually very slowly. The thickness of this layer is controlled by varying the viscosity and extraction speed of the sol. The sol can also be screen printed or spray coated, although it is more difficult to control the thickness of the layer using these techniques. The material used for the second dielectric layer 20 is It is preferably a ferroelectric ceramic material, preferably with a perovskite crystalline structure, providing a high dielectric constant. This dielectric constant is preferably similar to the first dielectric layer material in order to avoid voltage changes across the two dielectric layers 18, 2G However, when applied as a thinner layer in the second dielectric layer 2 (), a dielectric constant as low as about 2 ϋ can be used, but it will preferably be greater than 100. Exemplary materials include lead titanate silicate (Ρ ZO) , Lead lanthanum titanate (PLZT), and titanium of Sr, Pb and Ba are used in the first dielectric layer 18, PZT -2 6--------- Η ---.----- -f ----- installed ------, 玎 ------ (please read the notes on the back before filling in this page) This paper scale is applicable to the Chinese National Standard (CNS) A4 present grid ( 2 丨 Ο X '297 W 竑) 82. 5. 20,000 Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Industry and Consumer Cooperatives $ A6 B6 V. Description of invention (25) and PLZT are the best. PZT or PLZT is preferably deposited by spin deposition into a lyogel, which is subsequently sintered at less than about 600 ° C to form a smooth ceramic surface suitable for the deposition of sublayers. The sub-layer to be deposited is typically a phosphor layer, however, as described above, it is possible within the scope of the invention to include a further layer above the second dielectric layer 20 to further improve the interface with the phosphor layer. For example, a well-known film layer material that provides good injection properties and compatibility can be used. The deposition of the phosphor layer 22 is a well-known thin film deposition technique, such as: vacuum evaporation in an electron beam evaporator, sputtering method, and the like. The preferred phosphor material is Z n S: Mn, but other phosphors are known to emit light of different colors. Phosphorus layer 22 typically has a thickness of about 0.5 microns and a dielectric constant of between about 5 and 10. A further transparent dielectric layer above phosphorous 22 is not required, but can be included if necessary. The front electrode 34 is deposited directly on the phosphor layer 22 (or a further dielectric layer, if included). The front electrode is transparent and is preferably formed using well-known thin film technology, such as vacuum evaporation from an electron beam evaporator (UTO). The mandrel 10 is typically annealed and then sealed with a sealing layer 26, such as glass. From the back to the front according to the present invention, the better "sheets with typical thickness values are as follows: -2 7---------; ---- 7 ------ ί ----- Install ------. 玎 ------ Μ (Please read the precautions on the back before writing this page) This paper size is applicable to the Chinese National Standard (CNS) A 4 specifications (210 X 297 cm ¢) 82. 5. 20,000 320815 A6 Printed by Beigong Consumer Cooperation of the Central Standards Bureau of the Ministry of Economic Affairs _B6 V. Description of the invention (Μ) Substrate layer-vaporized aluminum rear electrode-A g / R t address line-10 micron 1 Dielectric layer-lead niobate-3 0 micrometers 2nd dielectric layer-lead chromate titanate-2 chemiphosphorus layer-ZnS: Mn-0.5 meter removal front electrode-ITO-0.1 chemisealing layer-glass-10- 20 microns In larger EL displays, the thickness of each layer can vary. For example, the thickness of the gel layer is typically increased to about 6-10 cm to provide the desired smoothness β. Similarly, the ITO layer thickness can be increased to 0.3 nm in larger displays. According to the present invention, the wiring of the front and back address lines of the electroluminescent stack to the voltage driving circuit is preferably formed by using through holes in the rear substrate. Preferably, the EL stack includes the thick dielectric layer of the present invention. Although not required. The voltage driving circuit includes a voltage driving component (typically a high-voltage driving chip) whose output is connected to the individual column and row address lines of the rear and front electrodes, so as to selectively activate pixels according to the image input multiple. Voltage drive circuits and components are generally well known in the art. To illustrate the present invention, through-hole wiring is provided on a known sealed high-voltage driver chip that is surface-bonded with known reflow soldering techniques. This type of high-voltage driver chip is famous for its conventional symmetrical pulse drive design and asymmetrical pulse drive design. However, those who are struggling with this technology will recognize that the drive circuit or drive components can be changed, and therefore will naturally be provided for wiring to the drive power (please read the precautions on the back before filling out this page) Order. This paper scale applies the Chinese National Standard (CNS) A4 specifications (2 丨 X X 297 mm) 82. 5. 20,000 printed by the Central Bureau of Standards of the Ministry of Economic Affairs, B, B and C cooperative printing A6 B6 V. Description of invention (27) Road Circuit pattern and through hole pattern. The present invention has applications regardless of whether the entire driving circuit or only part of it is to be assembled on the rear substrate. For example, instead of using a high-pressure sealed crystal H, it is possible to use a conventional mold H fixing method to use an unpackaged silicon wafer (crystal H) on the substrate, and it is possible to connect the driver circuit to the substrate using conventional wire bonding technology. In this case, the driving crystal H will occupy a small area on the substrate, and it will be possible to arrange all the driving circuits on the substrate. The result is an ultra-thin display panel that can interface directly to image signals and connect directly to dc power. Such displays will be used in ultra-thin portable products that require displays. Of course, the ability to assemble the driver circuit on the back of the substrate is an attempt at the overall size of the display. Larger displays provide more space for the driver circuit directly on the back of the substrate. A graphical illustration of the circuit wiring view of the present invention is illustrated in Figures 3-10. As indicated above, it is used to assemble the high-voltage driver wafer 30 to hold separate through holes and circuit patterns on the reverse surface of the rear substrate for illustration purposes. The chip to be selected is Superte X Η V 7 0 2 2 PJ chip connected to the column address line 1 4, and Supertex HV8308PJ and HV8408PJ (Supertex company is located in Sunnyvale, California, USA (S Li η nyva I e )) Used for wiring to row address 2 4. The difference between the latter two wafers is that one of the lead patterns is a reflection mirror image of the other lead pattern. Referring to the drawing, E L «sheet 10 is preferably, but not necessarily, produced with the two dielectric layers 18, 20 of the present invention, and is thus produced from the rear substrate 12 to the front view side. The rear substrate 12 has a through hole 32 in the pattern so that it will be close to the ends of the address lines 14 and 24 (which will be formed later). Alternatively, additional communication (please read the precautions on the back before writing this page) This paper size applies to the National Standards (CNS) f 4 specifications (210 X 297 mm) 82. 5. 20,000 Central Standards of the Ministry of Economic Affairs Bureau 8 Industrial and Consumer Cooperatives printed A6 B6 V. Description of the invention (28) Kong Neng provided a spaced relationship along the address line. This will be useful for providing wiring to the front η '〇 address line with high resistance. The graph in Figure 4 is to follow the column address line (rear electrode) 14 of the longer dimension and the row position along the shorter dimension. The address line (front electrode) 2 4 provides an EL panel connected to the rectangular base 12. The through hole 32 is preferably formed by laser. The through hole 32 is typically wider on one side due to the nature of the laser drilling process, and this side is selected as the back or reverse side to allow flowing conductive material to easily enter the through hole. The substrate 12 used for the EL laminate must be able to withstand the temperatures experienced in the subsequent processing steps. The substrate typically used is to provide sufficient rigidity to support the laminate and stabilize at or above 850 ° C to withstand subsequent pyrogenic sintering steps for thick film pastes and lyogel materials. The substrate will also be opaque to the laser light, allowing laser drilling to form the through holes 32. Finally, the substrate should provide good adhesion to the thick film paste used in the subsequent steps. Crystalline ceramic materials and opaque glass materials can be used. Vaporized aluminum is good. The circuit pattern 34 of conductive material is printed on the rear side of the base body 12 into the pattern shown in FIG. 5. In this step, the conductive material is drawn through the through-holes in a manner to be discussed. 2 2 ^ The substrate 1 2 has a circuit pattern on the rear side 3 4. The rear connector pad 36 around each through-hole 3 2 is driven by high voltage. Crystal H connector pads for chip (not shown) output 38, further connector pads (not labeled) for wiring to other circuits of the drive circuit (not shown), and many of the connector pads shown Electrical leads (not marked) etc. (please read the precautions on the back before writing this page) 丨 Installed-^ -30- This paper scale is applicable to China National Standard (CNS) A 4 specifications (210 X 297 ) 82. 5. 20,000 A6 B6 Printed by the Industrial and Commercial Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (29) The conductive material is preferably screen printed with a thick conductive paste applied. Silver / platinum thick film lakes are preferred. To form conductive paths through the through holes 32, when the circuit 34 is printed on the rear side, a vacuum is applied on the front side of the base 12. This is preferably achieved by placing the base body 12 between the base body 12 and the vacuum on a vacuum table having a main board drilled with holes of the pattern shown in FIG. The holes in the main board are aligned with or slightly larger than the holes in the base 12. No vacuum is applied until the circuit is printed to ensure that the vacuum is applied evenly. The vacuum is continuous until the conductive material is drawn through to the front of the substrate. At this point, a small amount of conductive material is drawn through to the front of the substrate 12, and the through-hole wall is coated, and then fired according to known procedures Thick film paste. According to this step, the circuit pad reinforcement pattern 42 is preferably, but not necessary, printed as shown in FIG. 7. The same conductive material, printing and burning steps are as follows. The column address lines 14 and the connector pads 4 Q a and 4 0 b are preferably formed by screen printing a thick film conductive paste such as silver / lead paste on the front side of the base 12. The address line pattern shown in FIG. 6 includes a row extending along the length of the base 12 and a terminal (row) terminal pad 40a. During this same step, the front (row) connector pad is printed to provide the row address line to the final wiring of the drive circuit through the via 32. The conductive paste is preferably as above, drawn through the through hole with a vacuum applied from the rear circuit side of the substrate. When the device for forming the conductive path through the perforation 32 has been formed from the thick film conductive paste as described above, the conductive path is also formed as a plated through hole, or becomes -3 1 --------- τ-- -5 ----- 1 ----- Dressing ------ 玎 ------ Μ (Please read the precautions on the back before writing this page) This paper size is applicable to Chinese national frame Standard (CNS) A 4 specifications (210 X 297 public goods) 82. 5. 20,000 A6 B6 Ministry of Economic Affairs Central Standards Bureau 3 industrial and consumer cooperatives printed goods V. Description of invention (3〇) Through holes formed by electrodeless plating, so It is well known in the art, as long as the plating layer is properly adhered to the substrate, and the subsequent layer is adhered to the conductor that has been plated. Then, the thick film dielectric layer 18 of the present invention is preferably formed and fired in the above-described manner. Then, the circuit side behind the substrate is preferably sealed with a sealant 44, for example, screen-printed with thick film glass paste, and the remaining is used to drive the wafer and connector pins 45 to other drive circuits (not shown) at high pressure Of the exposed connector pad. The seal pattern is shown in Figure 8. Then, the EL # sheet is completed with the lyogel layer 20, the phosphor layer 22, and the forward address line 2 4 as shown above. The sigmoid shape for the forward address line 24 shown in FIG. 9 is formed across the base 12 The width terminal is formed by parallel rows of front (row) connector pads 4G. The row address line 24 and the front (row) connector pad 40 are electrically interconnected. Line 46, if required, is provided for reliable electrical wiring. These are preferably formed by printing a conductive material such as silver via the screen in the pattern shown in FIG. The front sealing layer 26 as described above is provided to prevent the penetration of moisture. According to the present invention, the pre-IT 0 address line 24 of EL # slice 10 is preferably formed by laser characterization. The technical description of the laser engraving of the preferred EL stack 10 of the present invention is as follows. However, please understand that laser portrayal technology has a wide range of applications in graphics with flat overlays on top and bottom layers. In this regard, IT 0 and the phosphor layer 2 4, 2 2 are shown as not absorbing laser light to any -3 2---------- Μ --- · ------ ^- --- installed --- ordered --- for (please read the precautions on the back before writing this page) This paper size is applicable to China National Standard (CNS) A 4 specifications (210 X 297 Goods) 82. 5. 20,000 V. Description of the invention (31) A6 B6 Acid C junction layer and surface 18 lower layer in the medium of light quality 2 lead shot 02 acid Lei S niobium included film absorption thick and material, shown The layer is made of lead on the coating body of the cover 2 of the cover. The lead is made of lead acid and titanium, and the photolithography is transparent. , See. The connection of C and the length of the bulk material can be extended to the depth of the material layer. The depth of the inner layer is half-displayed. The phase layer of the bright layer is covered by the EL cut cover. In the, ί layer. Hold the light red, use the solution to reduce the amount of care, see or immediately respond to the electric injection, need to be able to burn the pan-yang, and the required text is too wide in the field of view. The wide-area frequency energy method of the spectrum straight tool shows the engraved explosion layer of the magnetic material side under the lower Ming Ming, which is engraved on the surface of the electric material and the surface layer of the liquid thunder layer. The radio-layer material is used in the thunder layer to avoid the use of two or one materials. Guide,
0 Τ 0 α > U (請先閲讀背面之注意事項再填寫本頁) .—裝 -11. 中 其 數數 傜傜 收收 吸吸 的的 層層 面蓋 下覆 在上 II II U 0 α α ^ 經濟部中央標準局员工消費合作社印製 度度— 透 積 厚厚Μ蓋 的的U6'覆 層層UT上 面蓋α的 下覆,數 在上地多 II II 佳有 Uο更當 Φ1 τ 層 明 透 不 面 〇 下 積在 的數 To多 0或 α / 於 大 分 十 及 層 明 和 , 的 時積 ο τ ο α 的 層1 每 對 於 大 需 必 和 的 積 TU U α 的 層1 每 對 即 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 五、發明説明(32) α Σ A6 B6 接 間 能 可 程 過 °1的 T 明 i發 0 α 本 據 根 貝 1 i , U持 維 •J Σ 係 關 述 上 果 如 度 厚 個 整 其 。 過度 穿厚 燒個 有整 沒的 , 層 份蓋 部覆 一 上 的過 層穿 面刻 下燒 在地 刻接 燒間 只且 地而 或 , 熱此 前如 之 〇 發叠 蒸分 或炸 \ 爆 及致 化導 軟會 姓則 燒 , 接層 間面 以下 能在 層於 蓋結 覆集 上力 果壓 如氣 蒸 蒸 及 化 熔 下 度 溫 的 低 料 材 層 面 下 在 較 在 將 料 材 層 蓋 覆 。 上發 傳使 熱是 的需 料必 材導 層傳 面熱 下的 在層 ,兩 力 c 能的 的料 割材 燒層 解蓋 分覆 高上 成於 做小 強地 nu tt 力裢 為較 導 間 期 刻 燒 在 正 域 區 的 束 光 射 雷 於 露 曝 自 會 不 。 熱失 的流 分域 充區 得的 間 時 散 。 擴間 的時 程的 過間 cl 34J 種期 此束 對光 ’ 射 散雷 擴在 互露 交曝 量域 大區 間独 之燒 層要 免於 避大 為需 必 測 預 得 使 般 1 的 知 〇 周程 所過 眾畫 為刻 質射 性雷 的的 佳明 較發 述本 上於 以合 順 波維 的致 射大 雷偽 受關 亦述 散上 擴果 互如 交 , 及而 叠然 分 0 炸遒 爆影 、度 解速 分描 的掃 割及 燒率 射功 雷 、 長 接 間 及 接 直 成 逹 來 變 並 制 控 能 件 條。 射果 雷結 他望 其期 等所 此的 ,蝕 持燒 (請先閲讀背面之注意事項再塡寫本頁) .裝·0 Τ 0 α > U (please read the precautions on the back before filling in this page). — Pack -11. Among them, the number of 傜 傜 s collected and sucked the layer cover under the cover II II U 0 α α ^ Printing System of Employees ’Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs — The U6 ′ cladding layer UT with a thick Μ cover is overlaid with Alpha, the number is higher in Shangdi II II. The number of accumulated layers is less than 0. The accumulated number To is more than 0 or α / in the case of ten minutes and the sum of the layers. The time product of ο τ ο the layer 1 of α is the product of TU U α and the layer 1 of each is That is, the paper scale is applicable to the Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 82. 5. 20,000 V. Description of the invention (32) α Σ A6 B6 T can be passed through 1 ° C. 0 α According to the root case 1 i, U Chiwei · J Σ is related to the fact that the thickness is as thick as the whole. Excessive wear, thick and burned, and the overcoat layer covered on the cover of the layer is burned in the ground and then burned in the ground, and the ground is only or ground, the heat is like this. The steam is steamed or fried \ burst and The chemist guide will be burnt, and the layer below the surface can cover the material layer under the low material level, such as steaming and melting, under the layer covering the cover, and it can cover the material layer. . The heat transfer is necessary for the material to be transferred to the layer under the surface heat transfer layer, and the two-strength material can cut the material and burn the layer to remove the cover and cover the upper layer. The light beams burned in the positive area in the intermittent period will be exposed to light and exposure. The heat lost flow divides the time interval of the charging area. The time interval between the expansion of the cl 34J seeding period of this beam of light 'scattered light spread in a large area of the mutual exposure and exposure area to avoid the need to avoid the big need to measure the general knowledge 〇 Jiaming, whose outstanding paintings are engraved by the projective radiographs of the week, is based on the fact that the shot of the big thunder with the help of the wave is also false, and the results are scattered, and the explosion is divided into 0. Explosion shadows, sweeping and burning rate shooting with high-speed tracings, long connection and straight connection to change and control energy control strips. Shoot the fruit, Lei Jie, he hopes to wait for this, etc., eclipse and burn (please read the precautions on the back before writing this page).
經濟部中央標準局S工消費合作社印K 射 雷 的 長 波 區 線 外 紅YA 或及 光射 見雷 可氣 有氬 具 , 供射 提雷 其碩on 在化40 射氣於 雷二大 知。約 已束有 光具 全 W C 0 ( 例波 範缅 是連 射或 雷波 G i A 浙 用 使 以 可 0 長 波 的 本紙張尺度適用中國國家標準(CNS) f 4規格(210 X 297公竑) 82. 5. 20,000 320815 A6 B6 經濟部中央標準局S工消費合作社印製 五、發明説明(33) 雷射,後者較佳於提供精確、高分解燒割。雷射光束是 以適當己知的透鏡条統聚焦而逹到期望的分解,而確保 充分局部功率密度來完成上覆蓋的去除。一般,設定雷 射光束的功率密度是使燒割的槽充分地大於上覆蓋透明 層的厚度。當透明層包含電極位址線時,此確保位址線 清楚地界定並且電氣隔離〇 實施刻畫可以對要刻盡的材料來移動雷射光束,或者 更佳地。安裝要刻畫的材料在相對雷射光束可移動的X -Υ座標機台上。對刻畫位址線,較佳是在X方向可移動 機台(即,垂直於所刻畫的線),在Υ方向可移動雷射 光束,即,沿此位址線〇 在雷射刻盡過程中蒸發或分解的材料可以安置接近於 雷射光束的真空來抽走經刻畫的材料。 本發明較佳的EL®片10中,一薄層的氣化絪錫24以已 知的方法沉積在磷層22上。真空沉積方法或溶凝膠方法 來沉積IT 0是發表在美國專利第4, 568,578號及第4, 849, 252號中。一任意的透明介質層可提供在ITO及磷層24、 2 2之間。較佳的P Z T溶凝膠層2 0及鈮酸鉛的厚膜介質層 18安置在磷層下而。EL«片10如上所述對習用TFEL裝置 是以相反順序形成。此便利使I T 0層2 4及磷層2 2成為在 下(在下面)不透明介質層1 8、2 ϋ (鈮酸鉛及P Z T >之 上的上(上覆蓋)透明層,順合於根據本發明的雷射刻 盡。 -3 5 - --------Η----------{-----裝------#------Ai (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家櫺準(CNS) f l規烙(2丨Ο X 2D7公釐) 82. 5. 20,000 經濟部中央標準局S工消費合作社印製 A6 B6 五、發明説明(34) 如上述,雷射刻畫個別的行位址線2 4。雷射光束直接 燒蝕溶凝膠層2 I)至少一部份及可能地在下面介質層1 8的 小部份,並且間接地燒蝕穿過I T 0及磷層2 4、2 2的整個 厚度。此使可靠的絶緣隙留在鄰接線之間。 如上述,行位址線24連接到驅動電路。更詳細地,根 據上述較佳的通孔連接過程,電氣互連接線4 6以蒸發銀 在圖1 0所示圖型中而形成在雷射刻畫前在S置於最後形 成位址線I T 0層部份的位置上。然後,以上述方式來刻 畫位址線。 完成的EL叠片能如上述以噴塗保護的聚合密封瘳在前 倒表面上,或以黏合玻璃板26到前表面來密封。 利用間接燒蝕來刻畫透明導體材料得到一些優點。可 使用一柑當低功率連缠波雷射在可見光範圍内産生光而 不用具有高瞬間功率輸出的紫外線脈波雷射。此不僅降 低雷射成本,亦在燒蝕的燒割上産生平滑邊緣。此對高 析像度E L顯示器待別重要。透明材料的直接燒鈾需要十 分高瞬間雷射功率在足夠短時間内沉積燒蝕所必要的能 量來避免熱自要發生燒蝕區域擴散掉。在習用技術中要 直接地燒蝕沉積在透明基體上的透明導體,只有一小分 數雷射功率直捺地被透明導體材料吸收;大部份的光通 過兩透明層。許多情形中,間接燒蝕能減小層之間的交 互擴散的問題,因為熱蒸發透明電極發生自透明電極的 底部。此促使在己蒸發材料流中向外且向上去除己燒蝕 -3 6 - 本紙張尺度適用中國國家標準(CNS) τ 4规恪(210 X 297公釐) H2. 5. 20,000 ^----“------j -----裝------,11------Ψ·—. (請先閲讀背面之注意事項再塡寫本頁) 經濟部中央標準局員工消費合作杜印製 A6 B6 五、發明説明(35) 的材料,而不是材料擴散進入在下面層》此尤其重要在 為了保留E L顯示器内介質及磷層的品質。 本發明以下列無限的例子進一步圖解説明。 例子1 此例子包括圖解説明在約2f)0v工作條件下簡單絲網印 製的鈦酸鋇(此材料在宮田(Miyata)等參考中用做為陶 瓷片)的厚膜層受到電氣崩潰。 單一像素電發光裝置在得自庫爾(coors)陶瓷(美國 ,克羅拉多州,大接面)的氣化鋁基體(5公分平方, 0.1公分厚)上來製作。後電極施加、集中在基體上, 但自邊緣有間距《所使用材料是銀/鉑導體,其印製成 位址線如電子技術中習用的。更詳細地,陶瓷合金 #C4740 (美國賓州,康秀豪肯(Conshohoken),陶瓷合 金(Cerma 11 oy)可現貨供應)經320網目不銹鋼絲網來絲 網印製成厚膜糊,而以乳化液塗層。乳化劑經光網板曝 光於紫外線光,致使保留來印製的乳化劑區域曝光。未 曝光乳化劑以水溶解掉經絲網用來印製糊之處。然後, 餘留的乳化劑以額外光曝光進一步硬化。經印製的糊在 150°C的爐内乾燥數分鐘,且在BTU型TFP 142-79 GA24帶 式爐内的大氣中以糊製造廠商建議的溫度分佈火燒。最 大處理溫度是85(TC。經火燒的電極導體層的結果厚度 是約9徹米。 介質層在此電極層上之形成如下文。含鈦酸銷的介質 (請先閲讀背面之注意事項再填寫本頁) α .裝. ,11. 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X烈7公¢) 82. 5. 20,000 經濟部中央標準局W工消費合作社印製 A6 B6 五、發明説明(36 ) 湖(E S L # 4 5 2 0 ,美國賓州普魯斯王(K i n g 〇 f P r u s s i a ) 的電子科學實驗室現貨供應,介質常數2 5 0 0 - 3 G 0 Q )經 正方形圖型内200網目絲網來印製以致除了電極邊綈的 電氣觸點襯墊外全部覆蓋。經印製的介質糊在B T U爐内 的大氣中以糊製造廠商建議的溫度分佈火燒(最大溫度 g〇0-l(3Q(rC)。結果經火燒介質的厚度在12到15徹的範 圍之内。然後,印製介質的第2及第3層,而以相同方 式在第1層上火燒。此3層經印製及燒結的介質層組合 的厚度是40到50微米。 根據已知的薄膜技術,碟層直接地沉積到介質層之上 。尤其,以百分之1摩爾的鎂摻雜的硫化鋅的0.5徹米 厚層利用UHV儀器型號6000之電子束蒸發器來蒸發到介 質層上。此層在蒸發器内真空下加熱,而在約2分鐘蒸 發過程中維持在150°C的溫度β 磷層以由氣化洇錫所構成的透明電氣導體來塗層ύ. 5 徹米層。此層以已知薄膜沉積技術來施加,尤其,真空 下4 0 0 °C利用電子束蒸發器。 叠片隨後在空氣中退火在450 °C經15分鐘而使磷及氣 化絪錫導體層退火。絪焊接觸點提供在I T 0層》此裝置 以矽_密封劑(矽硐樹脂亮光漆,cat.#419,M.G.化工 製造)。 此裝置以施加2 0 () V的D C電壓跨接於兩電極來測試。此 装置在一施加電壓時因直接包圍到氣化洇錫的觸點區域 -38- (請先閱讀背面之注意事項再塡寫本頁) 1 -裝- 訂_ 衣紙張尺度適用中國國家標準(CNS) Y4规格(210 X 297公釐) 82. 5. 20,000 五、發明説明(37) A6 B6 質徹 介顯 為到 因察 是觀 障能 故面 的表 置 〇 。裝面 障此表 故信滑 為相平 視,的 而合要 潰黏必 崩法供 氣方提 電同層 層相磷 質以對 介有有 的沒沒 内層 現或 顯一 的單 料做 材用 良而 不明 糊發 質本 介據 用根 商能 為不 因鋇 是酸 許鈦 也一不 此表 ,是 〇 而不層 然此質 。 如介 2 紋而 1 子 裂,第例 的的 製度 印溫 網結 絲燒 所低 糊鋇 的酸 鹽鈦 酸較 鈮及 鉛數 含常 以質 明介 說高 解有 圖具 括知 包已 子 、 例層 此質 介 酸 鈮 白 有 具 但 0 , 光的 發成 不備 但製 ,式 度方 強同 質相 介 1 的子 當例 適同 供如 提是 ,置 料裝 材 金 合 瓷 陶 鉛 約 數 常 質 介 /IV 號 例 如 度 厚 (請先閲讀背面之注意事項再塡寫本頁) •裝. 加 40施 加在 施 , 當後 置然 裝。 此潰 C 崩 層質 質介 介受 的遭 成有 形沒 所試 > 測 1 所 子時 壓 電 C D 特 伏 時 壓 電 0 於 面 介 因 是 良 不 光 發 信 相 合 黏 來 式 方 0 同 光相 發以 於有 良沒 不 鉛 酸 鈮 示 表 為 視 〇 必層 不質 子介 例 1 此第 ,或 此一 如單 C 做 題用 問能 性不 容明 相發 可本 的據 層根 3 芊 例 有 具 質 介 層 二 的 成 作 製 明 發 本 據 根 明 説 解 画 子 例 本 訂 經濟部中央標準局员工消费合作杜印« 層 磷 在 驟 步 外 額 , 有 ) 具 〇 1W 子性作 例光製 如發但 {的置 層好裝 質良的 介成 2 1 達子 第 c^l 的層於 鉛質同 酸介相 鈮 2 第 的 rp 酸 鈦 酸 結 及 本紙張尺度適用中國國家標準(CNS)肀4規格(210 X 297公釐) 82. 5. 20,000 經濟部中央標準局貝工消費合作社印$ A6 B6 五、發明説明(38) 施加之前利用溶凝膠過程施加錯酸鈦酸鉛(P Z T )的層到 已印製且火燒的介質層。溶膠以下述方向備製。醋酸在 1 0 5 °C脱水5分鐘。醋酸鉛1 2公克在8 0°C下溶解成7毫 升(m 1 )已脱水醋酸而形成無色溶液。此溶液容許冷卻, 而攪拌丙氣化結5 . 5 4公克(g )入溶液而形成淡黃溶液。 此溶液在丙氧化钛2 . 1 8 g加入及攪拌之後維持在6 ITC到 8 0°C 5分鐘。所結果的溶液在超音波床攪動約2 0分鐘來 確保任何餘留的固體溶化。然後,約1 . 7 5 m 1的4 : 2 : 1 之乙二醇乙烯比丙醇比水溶液加起來製成穩定的溶膠。 在塗層之前,多加乙二醇乙烯來諝整黏度到期望值用來 自旋塗層或液浸。所備製的介質層在一種情形中自旋塗 層,而在另一情形中以溶膠液浸。在自旋塗層情形,溶 液滴流到以3000 rpn在水平平面内自旋的第1介質層上 。在液浸的清形,使用更高黏度的溶瞟。對液浸過程, 基體是以每分鐘5公分的速率自溶膠抽出。然後,所結 果的塗層裝配在溫度600°C的爐内大氣中加熱經30分鐘 來轉變溶膠成Ρ Ζ Τ β P Z T的厚度約2到3微米。所觀察到 PZT的表面,比較絲網印製再燒結的第1介質層的表面 相當地更為平滑。 P Z T層的施加之後,如例子1來沉積磷及透明導體層 〇 此已完成的《片性能良好,具有相同於或較好於宮田 等所報告的發光度對電壓的持性。對用來顯示的最小發 本紙張尺度適用中國國家標準(CNS) f 4規格(210 X 297公¢) 82. 5. 20,000 --------丨·----^------^ -----裝------------^'J (請先閲讀背面之注意事項再塡寫本頁) 32〇8ί5 Α6 Β6 經濟部中央標準局Β工消費合作杜印S4 五、發明説明(39) 光度的臨限電壓是11QV。在臨限電壓之上50V的發光度 (卽1 6 0伏特,6 Ο Η ζ )是5 7 f t - 1 b (英呎二朗伯)。 例芊4 本例子包活圖解說明介質層厚度的變動對顯示器的工 作電壓及發光度兩者有影遒。 顯示器如例子3所製作,除了只是施加2層而不是3 層絲網印製層的介質層。第1介質層的厚度相對地減到 2 0到3 0撤米β 此顯示器功能良好。對最小發光度的臨限電壓所期望 自理論上的考慮是70伏待(比較例子3中的110伏特) 。在臨限電壓之上50伏特的發光度亦減到35 ft-lb (比 較例子3中的57 f t-lb)。 例罕FS 本例子圖解說明利用通孔來連接E L叠片的行列位址線 到驅動電路的詳細實施例。 可位址的EL顯示器利用如例子3所述的層沉積的相同 順序來製作。基體是自庫爾斯(Cor rs)陶瓷(美國克羅 拉多,大接面(Grand Junction})所得到0.0 25英吋長 方形的氣化鋁,具有尺寸長6英吋及寬2英吋》基體利 用二氣化磺雷射來鑽孔具有圖4所示圖型的0.Q06英时 直徑通孔。基體經檢視來確保所有的孔清潔。以孔徑發 現在面向雷射側的直徑約〇 . 〇 〇 8英吋,而在相對側約 0 . 0 0 6英时。具有較寛孔的開口側選擇為基體的後側而 -4 1 - ---------‘---Μ-----1 -----裝------,玎------ψ J (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標苹(CNS)甲4规格(210 X 297公釐) 82. 5. 20,000 A6 B6 經濟部中央標準局貝工消費合作社印$ 五、發明説明(4〇 ) 便於使導電材料流進通孔内。 在此之後,使用陶瓷合金# 4 7 4 0銀/鉑糊,經3 2 5網目 不銹鋼網來印制圖5所示的電路圖型到基體的後側上。 印製過程中,基體對準具有鑽成如圖4所示相同圖型 0 . ϋ 4 0英时直徑孔的主板,而且在主板下面施加真空來 使導電糊抽穿過基體内的通孔(即,穿過到基體的前視 側)。此步驟使圖5的電路圖型及穿過基體内的每一通 孔的導電通路一起形成。為確保真空施加的均勻性,不 啓動真空直到基體己經印製。此部份經檢査來確保填満 通孔。 印製之後,基體以糊製造廠商所建議的溫度分佈在 BTU型TFF 142-790Α24帶式嫌内大氣中火燒。最大溫度 是 850°C。 此步驟之後,如圖7所示電路強化圖型印製且火燒在 基體的後、電路側上(利用相同的陶瓷合金導電糊)。 此步驟使在隨後進行電氣接線的某些區域的電路圖型較 厚。 然後,列位址線及前行列連接器襯墊絲網印製在基體 前視側上。此線延伸横跨基體的長度到圖6所示圖型中 的列連接器襯塾。圖6中所示行連捺器襯墊在此相同步 驟中印製。列位址線及連接器襯塾利用相同的印製及火 燒條件自相同導電湖(陶瓷合金# 4 7 4 0)來形成。基體 安置在具有圖4通孔圖型的相同主板上,而&自r面施 -4 2 - (請先閱讀背面之注意事項再塡寫本頁) 本紙張尺度適用f國國家標準(CNS)甲4规格(210 X 297公釐) 82. 5. 20,000 經濟部中央標準局3工消費合作社印製 A6 B6 _ 五、發明説明(41) 加真空來油出導電糊穿過向基體的後側的通孔。己火燒 的電極層的厚度是約8徹米。約每英时有5 2列位址線, 而列位址線的總數目是6 8條。此部經檢查來確保填滿通 孔。 介質糊的3層(陶瓷合金SIP9333)如例子3所示印 製並火燒來形成約5ϋ微米厚的介質層。 然後,基體的後、電路側被密封。厚膜玻璃糊(美國 賓州赫個勞斯(Heraeus) -陶瓷合金製造的赫爾勞斯 IP9028)利用圖8所示圖型中的250網目絲網來印製。 用來接線到高壓驅動晶Η及其他驅動電路的連接器襯墊 留成未覆蓋β然後,此玻璃密封層利用製造廠商所建議 的的溫度分佈以7〇Q°C最高溫度在ΒΤϋ帶式爐中火燒。 上述火燒步驟期間,基板支架在陶瓷材料部份的任一 端處來避免電路側及爐帶上所印製材料之間的接觸。 然後,溶凝膠層大致如例子3所述以液浸來形成。典 型地使用3或4溶凝膠層,以10-25秒/英吋的速率自 具有以落球黏度計所量度的約100 cp黏度的混合物抽出 。在液浸層之間的溶凝膠在1 1 Q°C乾燥5分鐘。真空吸 盤放置在叠片有效區之上,而且溶凝膠水洗掉其餘區域 。然後,此層在帶式爐内約6 〇 〇 °C火燒2 5分鐘。逹到總 溶凝膠的厚度在3 - 1 0微米之間。隨箸此之後是如例子3 的磷靥利用摻百分之一鎂雜質的硫化鋅,具有0 . 5 - 1 . 0 撤米的厚度。 -4 3 - 本紙張尺度適用中國國家標準(CNS) f 4規格(2丨0 X 297公釐) 82. 5. 20,000 ---------'丨 J------f-----裝------,玎------^ J (請先閲讀背面之注意事項再塡寫本頁) 3208^5 Α6 Β6 經濟部中央標準局0Κ工消費合作社印製 五、發明説明(42 ) 圖中 成 。< 線師时 址25英 位共19 行總。 積而5 沉線 錫址 絪位 化行 氣52 自有 ,約 述时 所英ο 3 每 ο 子。是 例型距 如画間 , 的 的 後示間 然所之 9 線 是 度 寬 線 而 时 ί央 線 行 到 線 址 位 行 成 形 而 發 蒸 板 網 的 刑土 圖 示 。所 ο 11 心 圖 中經 對銀 心 前為 個 , 整漆 的光 器亮 0示脂 線顯樹 接在 _ 氣劑矽 電封是 的密劑 體 _ 封 導矽密 孔塗的 通噴用 上以使 體面所 基表 。 及圖封 墊視密 襯的來 器 Η 上 接# 之 連 面 之 製 所 廠 學 化 供 提 1 接 —~ 逋 以 器 示 顯 的 成 完 接 跨 號 信 波 方 器自 生各 産現 波發 脈經 的素 對像 墊一 襯每 行的 及器 列 示 的顯 路 , 電時 上加 倒施 後壓 體電 基當 在 C 積試 沉測 於來 亮 1 點總 6 子 例 (請先閲讀背面之注意事項再塡寫本頁) --裝. 在 而 度 強 的 致1 的 度 量 所 3 子 例 於 等 相 有 具 且 素 像 的 用 功 無 有 没 中 數 計 素 像 化 氣 畫 刻 射 雷 的 片 « L Ε 的 明 發 本 據 根 明 説 解 圖 子 例 本 上 1 non 基 瓷 陶 在 作 製 序 程 列 下 C 用 例使 施器 實一不 細顯 丄H. 1¾ 群陣 的矩 線的 址址 位位 錫可 翻 州 多 拉 屋 2 羅 ο 科 ο 國的 美时 ( 英 瓷 2 陶度 斯寬 爾及 庫吋 自 ί央 得 6 是度 體長 基有 0 具 面 接 大 的 形 方 長 厚 时 英 的 型 圖 示 所 4 圖 成 孔 鑽 來 射 雷 碩 化 氣二 以 此 ο 鋁 化 氣 潔 青 »7— 孔 的 有 所 保 確 來 査 檢 經 份 部 此 0 孔 徑 直 时 英 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 訂. 320815 A6 B6 五、發明説明(43 ) 圖 造過 製製 所印 -#〇 後豪製 之秀印 驟康來 步,網 此州絲 隨賓鋼 國綉 示 程 用 利 型 圖 路74間 電 # 期 瑚 鉛 銀 對 體 基 美不 ϋ 4 iso 金網 C3 合 2 有 瓷?3具 猙 陶 準 加後 施之 間燒 期火 製份 印部 於此 便在 而於 板便 主孔 的過 型通 圖猢 同吸 相空 體真 基 C 如孔 成體 鑽基 孔到 吋空 英真 aE 頦2 4 所 1 商 F F 廠 T 造型 製TU JJ 糊 以 份 部 此85 。度 路溫 通高 電最 導有 成具 形 , 體布 基分 瓷度 陶溫 過的 經議The Ministry of Economic Affairs, Central Bureau of Standards, S Industry and Consumer Cooperatives printed K. The long-wave area of the laser beam is red YA or light. See Lei Keqi with argon equipment for shooting. About WC 0 (for example, the continuous wave or thunder wave G i A is used in Zhejiang). The paper standard that can use 0 long wave is applicable to the Chinese National Standard (CNS) f 4 specification (210 X 297 gong) 82. 5. 20,000 320815 A6 B6 Printed by the Central Bureau of Standards, Ministry of Economic Affairs, S Industry and Consumer Cooperatives 5. Description of the invention (33) Laser, the latter is better to provide accurate, high resolution burning. The laser beam is known to the proper The lens is focused to achieve the desired decomposition and ensure sufficient local power density to complete the removal of the upper cover. Generally, the power density of the laser beam is set so that the burned groove is sufficiently larger than the thickness of the upper cover transparent layer. When the transparent layer contains electrode address lines, this ensures that the address lines are clearly defined and electrically isolated. Implementing the depiction can move the laser beam to the material to be exhausted, or better. Install the material to be depicted at the relative laser X-Υ coordinate machine with movable beam. For depicting address lines, it is preferable to move the machine in X direction (ie, perpendicular to the line drawn), and move the laser beam in Υ direction, ie, Along this bit Line 〇 The material evaporated or decomposed during the laser burnout process can be placed in a vacuum close to the laser beam to draw away the depicted material. In the preferred EL® sheet 10 of the present invention, a thin layer of gasified tin 24 is deposited on the phosphor layer 22 by a known method. The vacuum deposition method or the solution gel method to deposit IT 0 is published in US Patent Nos. 4,568,578 and 4,849,252. An arbitrary transparent medium The layer may be provided between the ITO and the phosphor layers 24, 2 2. The preferred PZT lyogel layer 20 and the thick film dielectric layer 18 of lead niobate are disposed under the phosphor layer. The EL 10 sheet 10 is as described above Conventional TFEL devices are formed in the reverse order. This facilitates the IT 0 layer 24 and the phosphor layer 22 to be below (below) the opaque dielectric layers 18, 2 ϋ (lead niobate and PZT> above) (upper (Cover) transparent layer, in line with the laser engraving according to the invention. -3 5--------- Η ---------- {----- 装 --- --- # ------ Ai (Please read the precautions on the back before filling out this page) This paper size is applicable to China National Standards (CNS) fl regulations (2 丨 Ο X 2D7mm) 82. 5 . 20,000 Ministry of Economic Affairs Central Standards Bureau S Work Consumer Printed by the cooperative A6 B6 5. Description of the invention (34) As mentioned above, the laser depicts individual row address lines 24. The laser beam directly ablate the lyogel layer 2 I) At least a part and possibly the underlying medium A small portion of layer 18, and indirectly ablate through the entire thickness of IT 0 and phosphor layers 24, 2 2. This leaves a reliable insulation gap between adjacent lines. As mentioned above, row address line 24 Connect to the drive circuit. In more detail, according to the above-mentioned preferred through-hole connection process, the electrical interconnection wiring 46 is formed in the pattern shown in FIG. 10 by evaporating silver before laser engraving, and the address line IT 0 is formed at the end of S. The position of the floor part. Then, the address lines are drawn in the manner described above. The completed EL laminate can be sealed on the front surface with the polymer-sealed lamination protected by spraying as described above, or by bonding the glass plate 26 to the front surface. Using indirect ablation to characterize transparent conductor materials yields some advantages. An orange can be used when the low-power entangled wave laser generates light in the visible range without using an ultraviolet pulse laser with a high instantaneous power output. This not only reduces the laser cost, but also produces a smooth edge on the ablated burn. This is especially important for high-resolution EL displays. Direct burning of uranium in transparent materials requires extremely high instantaneous laser power to deposit the energy necessary for ablation in a sufficiently short time to avoid the diffusion of heat from the ablation area. In conventional techniques, transparent conductors deposited on a transparent substrate are directly ablated. Only a fraction of the laser power is directly absorbed by the transparent conductor material; most of the light passes through the two transparent layers. In many cases, indirect ablation can reduce the problem of cross-diffusion between layers, because thermal evaporation of the transparent electrode occurs from the bottom of the transparent electrode. This promotes the removal of ablation outwards and upwards in the flow of evaporated material-3 6-This paper scale applies the Chinese National Standard (CNS) τ 4 regulations (210 X 297 mm) H2. 5. 20,000 ^ --- -"------ j ----- installed ------, 11 ------ Ψ ·-. (Please read the precautions on the back before writing this page) Central Ministry of Economic Affairs The Bureau of Standards and Staff ’s consumer cooperation du printed A6 B6. 5. The material of the description (35), not the material diffused into the lower layer. This is especially important in order to preserve the quality of the medium and phosphor layer in the EL display. The example is further illustrated. Example 1 This example includes the illustration of a thick film of barium titanate (this material is used as a ceramic sheet in Miyata and other references) by simple screen printing under about 2f) 0v working conditions The layer is subject to electrical breakdown. The single pixel electroluminescent device was fabricated on a vaporized aluminum substrate (5 cm square, 0.1 cm thick) from coors ceramics (Crossado, USA, large junction). Rear electrode Applied and concentrated on the substrate, but there is a gap from the edge "The material used is a silver / platinum conductor, which is printed The address line is as used in electronic technology. In more detail, ceramic alloy # C4740 (Conshohoken, Pennsylvania, Ceramic alloy (Cerma 11 oy) is available from stock) via 320 mesh stainless steel wire mesh It is printed as a thick film paste and coated with an emulsion. The emulsifier is exposed to ultraviolet light through a light screen, which causes the area of the emulsifier that is reserved for printing to be exposed. The unexposed emulsifier is dissolved in water and the screen is used for printing Where the paste is made. Then, the remaining emulsifier is further hardened with additional light exposure. The printed paste is dried in an oven at 150 ° C for several minutes and in the atmosphere of the BTU type TFP 142-79 GA24 belt furnace The temperature distribution recommended by the manufacturer of the paste is fired. The maximum processing temperature is 85 ° C. The resulting thickness of the fired electrode conductor layer is about 9 cm. The formation of the dielectric layer on this electrode layer is as follows. Media (please read the precautions on the back before filling in this page) α. Installed., 11. The paper size is applicable to the Chinese National Standard (CNS) A 4 specifications (210 X Lie 7 Gong) 82. 5. 20,000 Ministry of Economic Affairs Printed by the Central Standards Bureau W Industrial and Consumer Cooperative A6 B6 V 3. Description of the invention (36) Lake (ESL # 4 5 2 0, King 〇f P russia, Pennsylvania, USA, electronic science laboratory is available from stock, medium constant 2 5 0 0-3 G 0 Q) It is printed on a 200-mesh screen in a square pattern so that it is completely covered except for the electrical contact pads of the electrode border. The printed dielectric paste is burned in the atmosphere in the BTU furnace at the temperature distribution recommended by the paste manufacturer ( Maximum temperature g〇-1 (3Q (rC). As a result, the thickness of the fired medium is in the range of 12 to 15%. Then, the second and third layers of the medium are printed and fired on the first layer in the same manner. The combined thickness of the three printed and sintered dielectric layers is 40 to 50 microns. According to the known thin film technology, the disc layer is directly deposited on the dielectric layer. In particular, a 0.5 cm thick layer of zinc sulfide doped with 1 mole of magnesium is evaporated onto the dielectric layer using a UHV instrument model 6000 electron beam evaporator. This layer is heated under vacuum in the evaporator, and is maintained at a temperature of 150 ° C during evaporation for about 2 minutes. The β-phosphorus layer is coated with a transparent electrical conductor composed of vaporized tin oxide. This layer is applied by known thin film deposition techniques, in particular, using an electron beam evaporator at 400 ° C under vacuum. The laminations were then annealed in air at 450 ° C for 15 minutes to anneal the phosphor and vaporized tin conductor layers. Welding contacts are provided on the I T 0 layer. This device is made of silicon sealant (silicone resin varnish, cat. # 419, manufactured by M.G. Chemical). This device was tested by applying a DC voltage of 20 () V across the two electrodes. This device directly surrounds the contact area of vaporized fuming tin when a voltage is applied -38- (please read the precautions on the back before writing this page) 1-装-end_ CNS) Y4 specification (210 X 297 mm) 82. 5. 20,000 V. Description of the invention (37) A6 B6 The quality is clearly shown to be because the observation is the appearance of the obstacle. The face mask is installed on this table, so the letter slip is a head-up, and it is necessary to collapse the method of gas supply. The gas supply side is charged with the same layer of phase phosphor to the single material with or without the inner layer. The quality of the material is not clear and the paste quality is based on the use of the root quotient. It is not because the barium is the acid and the titanium is not listed, it is not the quality of the layer. If there are 2 lines and 1 split, the system of the first example has a lower temperature than the niobium and lead. The titanic acid content of barium is lower than that of niobium and lead. The sub-layer and the sub-layer of niobium white have a specific value of 0, but the development of light is not prepared, but the formula of Fang Qiang Homogeneous Intermediate 1 is suitable. Lead approx. Medium / IV number, for example, is thick (please read the precautions on the back before writing this page) • Pack. Add 40 to apply and install it later. This C-cracked layered medium is tangible and unacceptable.> Measurement 1 Piezoelectric CD at the time of volts Piezoelectric 0 Piezoelectric 0 at the interface because the interface is good or bad. Relatively speaking, the appearance of niobium and niobium lead oxide is regarded as a must. Layer 1 is not proton-mediated. Example 1, this is the same as a single C. The problem is that it is not possible to understand the basis of the layer 3. For example, there is a production system with a medium layer two. The original version is based on a clear explanation of the drawing. The book is set for the Ministry of Economic Affairs. The Central Standards Bureau. Employee consumption cooperation. Du «layer phosphorus in the step outside, there is) 〇1W example The light is made like a hair but the {layer is well placed and the quality is good. The layer is 2 1 c ^ l in the lead-acid mesophase niobium 2. The rp titanate junction and the paper size are in accordance with Chinese national standards. (CNS) Yuan 4 specifications (210 X 297 mm) 82. 5. 20,000 Printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs $ A6 B6 V. Description of the invention (38) Before application, use the gelling process to apply the stearic acid titanate Lead (PZT) layer to the printed and fired dielectric layer. The sol is prepared in the following directions. Acetic acid was dehydrated at 105 ° C for 5 minutes. 12 g of lead acetate dissolves into 7 milliliters (m 1) of dehydrated acetic acid at 80 ° C to form a colorless solution. This solution was allowed to cool, and the propylene gasification knot was stirred into 5.54 grams (g) into the solution to form a pale yellow solution. This solution was maintained at 6 ITC to 80 ° C for 5 minutes after the addition of 2.18 g of titanium propionate and stirring. The resulting solution was stirred in the ultrasonic bed for about 20 minutes to ensure that any remaining solids were dissolved. Then, about 1.75 m 1 of 4: 2: 1 ethylene glycol to propanol to aqueous solution is added to make a stable sol. Before coating, add more ethylene glycol to adjust the viscosity to the desired value for spin coating or liquid immersion. The prepared dielectric layer is spin-coated in one case, and immersed in the sol solution in another case. In the case of spin coating, the solution droplets flow onto the first dielectric layer spinning at 3000 rpn in the horizontal plane. In the clear form of liquid immersion, use a higher viscosity solution. For the liquid immersion process, the substrate is withdrawn from the sol at a rate of 5 cm per minute. Then, the resulting coating was assembled in an atmosphere at an oven temperature of 600 ° C and heated for 30 minutes to convert the sol to ΡΤΤΤβΡΤΤ thickness about 2 to 3 microns. The observed surface of PZT is considerably smoother than the surface of the first dielectric layer re-sintered by screen printing. After the application of the P Z T layer, phosphorous and transparent conductor layers were deposited as in Example 1. This completed "Plate performance is good, with the same or better than the reported luminosity of Miyata et al. For the minimum paper size used for display, the Chinese National Standard (CNS) f 4 specifications (210 X 297 g) 82. 5. 20,000 -------- 丨 · ---- ^ --- --- ^ ----- 装 ------------ ^ 'J (Please read the precautions on the back before writing this page) 32〇8ί5 Α6 Β6 Central Bureau of Standards, Ministry of Economic Affairs Β Industrial and consumer cooperation Duyin S4 V. Description of invention (39) The threshold voltage of photometric is 11QV. The luminosity at 50V above the threshold voltage (卽 1 6 0 volts, 6 Ο Η ζ) is 5 7 f t-1 b (two feet Lambert). Example Q4 This example includes a graphic illustration of the change in the thickness of the dielectric layer that affects both the operating voltage and the luminosity of the display. The display was made as in Example 3, except that only two dielectric layers were applied instead of three screen printed layers. The thickness of the first dielectric layer is relatively reduced to 20 to 30 meters. This monitor functions well. The expected threshold voltage for minimum luminosity is theoretically considered to be 70 volts (compared to 110 volts in Example 3). The luminosity at 50 volts above the threshold voltage was also reduced to 35 ft-lb (compare 57 f t-lb in Example 3). Example FS This example illustrates a detailed embodiment using via holes to connect the row and column address lines of the EL stack to the drive circuit. The addressable EL display was fabricated using the same sequence of layer deposition as described in Example 3. The substrate is 0.025 inch rectangular vaporized aluminum obtained from Cor rs ceramics (Crollado, USA, Grand Junction), with a size of 6 inches long and 2 inches wide. Use the two gasification sulphur laser to drill a 0.Q06 inch diameter through hole with the pattern shown in Figure 4. The substrate is inspected to ensure that all holes are clean. The diameter found on the laser facing side is about 〇. 〇〇8 inches, and about 0.06 inches on the opposite side. The opening side with a larger hole is selected as the back side of the base and-4 1----------'--- Μ ----- 1 ----- installed ------, 玎 ------ ψ J (please read the precautions on the back before filling in this page) (CNS) A4 specifications (210 X 297 mm) 82. 5. 20,000 A6 B6 Printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. V. Description of the invention (4〇) Facilitates the flow of conductive materials into the through holes. After that, using the ceramic alloy # 4 7 4 0 silver / platinum paste, the circuit pattern shown in Figure 5 was printed onto the back side of the substrate through a 3 2 5 mesh stainless steel mesh. During the printing process, the substrate alignment was drilled. As shown in Figure 4 Same as figure 0. ϋ 40-inch diameter main board, and apply vacuum under the main board to draw conductive paste through the through hole in the base body (that is, to the front side of the base body). The circuit pattern of 5 and the conductive path through each through hole in the substrate are formed together. In order to ensure the uniformity of the vacuum application, the vacuum is not activated until the substrate has been printed. This part is checked to ensure that the through holes are filled. After the preparation, the substrate is burned in the BTU type TFF 142-790Α24 belt-like inner atmosphere at the temperature recommended by the paste manufacturer. The maximum temperature is 850 ° C. After this step, the circuit enhancement pattern is printed as shown in Figure 7 And fire on the back of the substrate, on the circuit side (using the same ceramic alloy conductive paste). This step makes the circuit pattern thicker in some areas where electrical wiring is subsequently performed. Then, the column address line and the front row and column connector liner The pads are screen printed on the front side of the substrate. This line extends across the length of the substrate to the column connector liner in the pattern shown in Figure 6. The row connector liner shown in Figure 6 is the same step Printed in China. Address line and connection The lining is formed from the same conductive lake (ceramic alloy # 4 7 4 0) using the same printing and firing conditions. The substrate is placed on the same main board with the through hole pattern of FIG. 4, and the & 2-(Please read the precautions on the back before writing this page) The size of this paper is applicable to the National Standard (CNS) A 4 specifications (210 X 297 mm) of 82. 5. 20,000 The Ministry of Economic Affairs Central Standards Bureau Printed by the cooperative A6 B6 _ V. Description of the invention (41) Apply vacuum to oil out the conductive paste and pass through the through hole to the rear side of the substrate. The thickness of the fired electrode layer is about 8 cm. There are 52 address lines per British hour, and the total number of address lines is 68. This section is inspected to ensure that the through holes are filled. The three layers of dielectric paste (ceramic alloy SIP9333) were printed and fired as shown in Example 3 to form a dielectric layer approximately 5 μm thick. Then, the back side and the circuit side of the base body are sealed. Thick film glass paste (Heraeus, Pennsylvania-Heralus IP9028 made of ceramic alloy) was printed using the 250 mesh screen in the pattern shown in FIG. 8. The connector pad used for wiring to the high-voltage drive crystal H and other drive circuits is left uncovered. Then, this glass sealing layer uses the temperature distribution recommended by the manufacturer at a maximum temperature of 70 ° C in the BT belt furnace Fire. During the above firing step, the substrate holder is at either end of the ceramic material portion to avoid contact between the printed material on the circuit side and the furnace belt. Then, the lyogel layer was formed by liquid immersion substantially as described in Example 3. Typically, a 3 or 4 lyogel layer is used, drawn from a mixture having a viscosity of about 100 cp as measured in falling ball viscosity at a rate of 10-25 seconds / inch. The lyogel between the liquid immersion layers was dried at 11 Q ° C for 5 minutes. The vacuum suction cup is placed on the effective area of the lamination, and the remaining area is washed away with the gel water. Then, this layer was fired in a belt furnace at about 600 ° C for 25 minutes. The thickness of the total lyogel is between 3 and 10 microns. Following this, the phosphoric oxide as in Example 3 utilizes zinc sulfide doped with one percent of magnesium impurities and has a thickness of 0.5-1.0 m. -4 3-This paper scale is applicable to the Chinese National Standard (CNS) f 4 specifications (2 丨 0 X 297 mm) 82. 5. 20,000 --------- '丨 J ------ f ----- Installed ------, 玎 ------ ^ J (Please read the precautions on the back before writing this page) 3208 ^ 5 Α6 Β6 Central Bureau of Standards, Ministry of Economic Affairs 0Κ 工 consumer cooperative Print 5. Description of the invention (42) Pictured. < The line master's address is 25 English and a total of 19 lines. Jier 5 Shen line, tin site, location, qi, 52, own, about 3 times per son. It is an example of the distance between the pictures. The 9 lines are the wide lines and the lines from the line line to the line address line are formed and the criminal soil of the steamed plate network is shown. So ο 11 The heart picture is in front of the silver heart, the light paint of the whole paint is bright, 0 shows the fat line, and it is connected to the _ gas agent silicon electric seal is the dense body _ the sealing guide silicon dense hole coating for the spray On the table to make it decent. And the picture seal as the densely lined device Η 上 接 # The connection of the factory is provided by the factory. 1 connection-~ The display is completed by the device. The meridian element pairs the display circuit listed in each row and the device as the image pad. After the electric time is added, the voltage is applied to the electric base. When it is tested in the C product, it is lighted up to 1 point. Total 6 cases (please first Read the precautions on the back and then write this page) --installed. In the strong degree, the measurement of 3 results in the same phase with the same image and the work of the prime image. The film of shooting mine «L Ε's Mingfa version is based on a clear explanation of the example of the graph. On the basis of a non-ceramic pottery in the production process, the C use case makes the applicator show no detail. H. 1¾ Moment of the array The location of the line is Dora House 2 in Si Kefan State, Luo Ke, and the United States is beautiful (British Porcelain 2, Tao Du Skuer, and Ku Cun since 6). The body has a long base with 0 faces. The square shape is long and thick, and the type of the picture is shown in Figure 4. In this way, the aluminum oxide clean green »7—the hole is guaranteed to be inspected by the division. This paper size of 0-inch straight-length English paper is applicable to the Chinese National Standard (CNS) A 4 specifications (210 X 297 mm) 82. 5. 20,000 orders. 320815 A6 B6 V. Description of the invention (43) The picture was made by the manufacturer-# 〇 after the heroic show, the printing is quick and easy. 74 间 电 # Periods of lead and silver on the body of the United States and the United States 4 iso gold mesh C3 in 2 with porcelain? 3 with a pottery quasi-plus after the firing period of the firing period of the printing part is here and the main hole The pass-through pattern is the same as the suction phase of the hollow body C. If the hole is drilled into the base body to the inch space Yingzhen aE Chin 2 4 4 1 1 FF factory T modeling made TU JJ paste to share this 85. degree road temperature The highest conductivity of Tonggao is shaped, and the body cloth is divided into porcelain.
V 在 (請先閲讀背面之注意事項再填寫本頁) 燒 火 中 氣 大 内 爐 式 帶 火} 再糊 製電 印導 經金 型合 圖瓷 化陶 強同 路相 電用 示使 所ί 7 上 圖側 如路 S , IpBC 後 、 之後 驟的 步體 此基 隨在 燒 _ 路 電 的 内 域 區 些 某 的 處 之 線 接 氣 Igml 蜀 要 後 隨 使 驟 。 步厚 此較 C 型 前 6 } 的圖示 體如所 基 { 6 在墊函 製襯如 印器 ί 塾接成 襯連形 器列驟 接到步 «.ΓΡΓ ..V J 伸 财 及延在 線度亦 址長墊 位體襯 列基器 組著接 一 沿連 ,線行 後此 。 此 。.} 隨侧示 視所 條型的 燒圖體 火孔基 及通向 製 4 孔 印圖通 同有過 相具穿 用在而 利置空 是安真 塾體加 襯基施 器 c 面 接成下 連形自 列來而 行猢, 及鉛上 線銀板 址同主 位相的 列自同 。件相 每 〇 米0。 8 條 約68 是是 度目 厚數 層總 極線 電址 的位 燒列 火而 已 , 。線 糊址 電位 導列 出52 油有 侧吋 後英 .-裝. 訂· 經濟部中央標準局S工消費合作社印製 金述 合所 瓷 3 陶子 ί 例 糊如 質丨85 介製度 鉛印溫 酸而高 鈮上最 的線丨 層址的 三位議 次列建 在所 p 商 序 造 犋 丨^ 嗛 3)以 t 3 且 9 帶 rp在 I 佈 分 度 溫 火 内 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 經濟部中央標準局員工消費合作杜印餐 A6 __B6_ · 五、發明説明(44) 。此介質層組合的厚度是5 0微米。 隨此之後,基體的後、電路側如例子5所述密封成圖 8所示圖型。 其次,3-10徹米厚層的,結酸鈦酸鉛(PZT)沉積在鈮 酸鉛層上形成一平滑表面。使用如例子5所述利用液浸 的溶凝膠技術。然後薄膜磷層利用已知技術中電子束蒸 發方法束沉積。此磷層是摻U鎂雜質的硫化鋅,其沉積 到0 . 5及1微米之間的厚度。 其次步驟是利用己知技術中電子束蒸發方法束沉積 300微米厚的氣化烟錫(ΙΤ0)在磷層上。 然後,此I T 0層利用調整到5 1 4 . 5塵米的2瓦特(W ) C W (連鑛波)氬離子雷射來圖型成2 5 6條位址線。E L叠片 安裝在可移動X座標機台上,使畳片在垂直於在雷射光 束下所刻畫的線的.方向中移動。此雷射光束在Y方向移 動來刻畫線。雷射光束聚焦成1 2撤米的光點,而雷射功 率調整到使得氧化絪錫、在下面磷層及1 0 %所組合的在 下面介質層等經雷射光束掃描過之處燒蝕掉(約1.8W) 。此掃描速度控制在約1QQ到500 μ / sec來提供分別地具 有4 0或2 5微米隙的位址線,及分別地6 - 8或3 - 4徹米的位 址線深度《位址線之間間距(卽,在線中心之間)約是 500徹米。鄰接基體的真空油掉己氣化及燒蝕的材料。 透明電極圖型,在燒蝕一完成時,是如圖9所示圖型。 己完成顯示器上,約有每英时5 0行位址線,及總共2 5 -4 6 - 一 T------{ 裝------’11------^ J---* (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)甲4規格(210 X 297公货) 82. 5. 20,000 3^0815 A6 __B6 _ 五、發明説明(45 )行。 在刻盡I T 0行位址線之前,前(行)連接器襯墊及最 終I T 0位址線之間的銀互連接線經過網板自銀絲網印製 成圖1 0的圖型。 雷射刻畫之後,已完成顯示器的前視側塗層保護聚合 層(矽酮樹脂亮光漆,c a t · #4 1 9,M G化學製造)。 然後,顯示器以連接提供160 V電壓脈波、64 Hz頻率 的脈波電壓跨接於所選擇像素來施加電壓測試。每一像 素可靠地點亮具有相同於上述例子單一像素裝置的發光 度β 本例子位址線的折像度通常十分高於以照像石販印刷 技術可達到的。商用現貨裝置典型地具有寛度180-205 徹米及6 5 - 8 0微米元線間間隙的I Τ 0位址線。如上所述, 根據本發明,2 5及4 0微米間隙的生産,視雷射掃描速度 而定。此較高桥像度容許顯示器的有效對總區域的更高 比值,因為能使更寬的ΙΤ0位址線具有更小間隙。 例平7 本例子圖解說明根據本發明製作的兩層介質,但具有 第1介質層自具有較例子3及4所使用的糊更高介質常 數的糊來製作。 (請先閲讀背面之注意事項再填寫本頁) —裝- 訂. 經濟部中央標準局R工消費合作社印製 成的層 形糊質 層容介 質電 1 介 Κ 第 1 高 〇 第下數 有以常 具10質 但42介 ,碼00 作號。’ 製如10 來供約 述提有 所所具 3 室糊 子驗結 例實燒 如學此 置科 〇 裝子鉛 此電酸 自鈮 本紙張尺度適用t國國家揉準(CNS) f 4規格(210 X 297公釐) 82. 5. 20,000 S20815 經濟部中央標準局R工消費合作社印货 A6 B6____ 五、發明説明(46 ) 具有約5 Q微米的厚度。如例子3所述,施加E> Z T的溶凝 膠到約5徹米的厚度。 此装置功能良好,具有對最小發光度的9 1伏特臨限電 壓及在1 5 0伏恃的5 0 ft - 1 b的發光度。 例孑ft 本例子圖解説明以自鈮酸鉛糊所形成的第1介質層及 自锆酸鈦酸鉛(P L Z T )所形成的第2介質層來製作兩層介 質。PLZT具有約1,000的介質常數。此PLZT具有克分子 比值為結比鈦比鑭的5 2 : 3 2 : 1 6。 此裝置如例子3所述來製作,具有溶凝嘐層備製如下 在5 0 m 1冰醋酸内溶解9 9 · 5 %純度醋酸鉛1 2 0公克。合 成的溶液在冷卻到7 Q °C之前加熱到9 G °C並保持在此溫度 2分鐘。其次,增加55.4公克的丙氣化錯,而此合成溶 液加熱到8 Q °C並保持在此溫度1分鐘。冷卻到7 0 °C之後 ,增加2 1 . 8公克的異丙氣化钛。其次,溶解1 1 . 4公克的 硝酸鑭到20η的冰醋酸内,而將此加入溶液内。最後, 為穩定此溶液而且調整黏度到適'當值,添加1 0 m 1的乙撐 二醇,5ml的丙(乙)醇及2.5ml的去礦物水。 P L Z T溶凝膠以相同於例子3所述的方式液浸來施加到 第1介質層。經液浸部份在6Gfl °C火燒而轉變第2層成 P L Z T。4層P L Z T以連缠液浸及如此火燒來施加而備製用 來沉穡磷層的滴當平滑表商。逹到5徹米的總厚度。 一 4 8 _ (請先閲讀背面之注意事項再填寫本頁) 丨裝- 訂 本紙張尺度適用中國國家樣準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000 五、發明説明(47 ) A6 B6 在 及 壓 電 限 臨 特 伏 5 7 有 具 〇 , 度 好光 良發 能的 功Lb 置t-f 装 此37 的 恃 伏 術的 技同 此相 於考 擅參 於是 關此 明於 發表 本發 是合 表併 發有 的所 及 〇 提示 所指 中的 格準 規水 在II 有技 所的 者 併 要 示 指 地 別 値 及 地 確 明 表 發 的 別 傕 毎 同 如 至 C 甚考 圍參 範合 是所 不及 而示 語所 用除 逑排 描為 做作 來明 用説 是及 明語 說用 LC=1 及 種 語此 用用 的利 中算 格打 規有 本沒 於 c 用制 限 利 專 請 申 以 是 圍 範 。 的文 明下 發如 本其 知 , 認制 經限 其的 ,有 點僅 待及 的義 些定 那來 的圍 述範 (請先閲讀背面之注意事項再塡寫本頁) 丨裝· 、11. 經濟部中央標準局貝工消費合作社印製 本紙張尺度適用中國國家樣準(CNS)甲4規格(210 X 297公釐) 82. 5. 20,000V In (please read the precautions on the back and fill in this page first) Burning in the air large internal furnace with fire} Then paste the electronic printing guide through the gold type picture porcelain ceramic pottery same-phase electrical instruction center 7 The figure above is like the road S, the step body after IpBC, and the step body. This base is followed by the line Igml Shu in the inner area of the burning road. The thickness of this step is better than that of the top 6 of the C-type. The body of the figure is based on {6 in the liner system, such as a printer, and the liner is connected to the liner. The line is connected to the step «.ΓΡΓ ..VJ The base pads of the long pad body of the degree of address are connected one after another, and the line is followed. This. .} With the side view, the strip-shaped burned body fire hole base and the four-hole printed pattern are commonly used in the past, and the use of the empty is an Anzhen University body with a lining base applicator. The lower connection is from the column and the column from the lead to the upper silver is the same as the column from the main phase. Pieces phase 0 every 0 meters. 8 of about 68 are just a few of the thickness of several layers of the total line of the electrical address. Line paste site potential guide lists 52 oils with side inches and then English.-installation. Ordered by the Ministry of Economic Affairs, Central Standards Bureau, S Industry and Consumer Cooperatives, printed by Jinshuhe Porcelain 3 Tao Zi, for example, the paste is as good as the quality. The most important line on the niobium 丨 the three positions of the site are listed in the order of the business order ^ ^ 嗛 3) t 3 and 9 with rp in the temperature distribution of the I cloth division. This paper scale applies the Chinese national standard ( CNS) A4 specifications (210 X 297 mm) 82. 5. 20,000 Ministry of Economic Affairs Central Standards Bureau employee consumption cooperation Du Yin meal A6 __B6_ · Fifth, the invention description (44). The thickness of this combination of dielectric layers is 50 microns. Following this, the rear side and the circuit side of the substrate were sealed as shown in Example 5 into the pattern shown in FIG. 8. Secondly, a 3-10 cm thick layer of lead titanate (PZT) is deposited on the lead niobate layer to form a smooth surface. The lyogel technique using liquid immersion as described in Example 5 was used. The thin film phosphor layer is then beam deposited using known techniques of electron beam evaporation. This phosphorous layer is zinc sulfide doped with U magnesium impurities, which is deposited to a thickness between 0.5 and 1 micron. The next step is to deposit 300-micron-thick vaporized soot (ITO) on the phosphor layer using electron beam evaporation methods known in the art. Then, the I T 0 layer is patterned into 2 5 6 address lines using a 2 Watt (W) C W (continuous ore wave) argon ion laser adjusted to 5 1 4.5 dust meters. The E L lamination is mounted on a movable X-coordinate table so that the pancake moves in a direction perpendicular to the line drawn under the laser beam. This laser beam moves in the Y direction to draw a line. The laser beam is focused into a 12-meter-removed spot, and the laser power is adjusted to cause ablation where the tin oxide, the underlying phosphor layer, and the 10% combined dielectric layer below are scanned by the laser beam. Off (about 1.8W). This scanning speed is controlled at about 1QQ to 500 μ / sec to provide address lines with a gap of 40 or 25 microns, respectively, and an address line depth of 6 to 8 or 3 to 4 cm respectively. The distance between them (卽, between the online centers) is about 500 cm. Vacuum oil adjacent to the substrate removes vaporized and ablated materials. The pattern of the transparent electrode is as shown in FIG. 9 when the ablation is completed. On the completed display, there are about 50 lines of address lines per hour, and a total of 2 5 -4 6-one T ------ {装 ------ '11 ------ ^ J --- * (Please read the precautions on the back before writing this page) The paper size is applicable to China National Standard (CNS) A 4 specifications (210 X 297 public goods) 82. 5. 20,000 3 ^ 0815 A6 __B6 _ 5. Description of invention (45). Before engraving the I T 0 row address line, the silver interconnection between the front (row) connector pad and the final I T 0 address line is printed from the silver screen through the screen to form the pattern in Figure 10. After the laser characterization, the protective polymer layer on the front side of the display (silicone resin varnish, cat # 4 19, manufactured by MG Chemical) has been completed. Then, the monitor applies a voltage test by connecting a pulse voltage of 160 V and a pulse voltage of 64 Hz across the selected pixels. Each pixel is reliably lit with the same luminosity β as the single pixel device of the above example. The refractive index of the address line of this example is usually much higher than that achievable with photolithography technology. Commercial off-the-shelf devices typically have I Τ 0 address lines with a degree of 180-205 mils and a gap between 65-800 microns. As described above, according to the present invention, the production of gaps of 25 and 40 microns depends on the laser scanning speed. This higher bridge resolution allows the display to have a higher effective ratio to the total area, because the wider IT0 address lines can have a smaller gap. Example 7 This example illustrates a two-layer medium made according to the present invention, but the first medium layer is made from a paste having a higher dielectric constant than the pastes used in Examples 3 and 4. (Please read the precautions on the back before filling out this page) — Binding-Ordering. The layered paste-like layered dielectric printed by the R and Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. It is usually 10 but 42, code 00 as the number. 'Prepared as 10 to provide a summary of the three-room paste test results, such as the study of this set, the device lead, the electrical acid from niobium, the paper standard is applicable to the national standard (CNS) f 4 Specification (210 X 297 mm) 82. 5. 20,000 S20815 Printed goods A6 B6____ of the R and Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (46) It has a thickness of about 5 Q microns. As described in Example 3, the gel of E > Z T was applied to a thickness of about 5 cm. This device functions well, with a 91 volt threshold voltage for minimum luminosity and a 50 ft-1 b luminosity at 150 volts. Example ft This example illustrates the production of a two-layer dielectric using a first dielectric layer formed from lead niobate paste and a second dielectric layer formed from lead zirconate titanate (PLZT). PLZT has a dielectric constant of about 1,000. This PLZT has a molar ratio of 5 2: 3 2: 1 6 with a ratio of titanium to lanthanum. This device was fabricated as described in Example 3, with a coagulation layer prepared as follows: Dissolve 9 9 .5% pure lead acetate 120 g in 50 m 1 glacial acetic acid. The resulting solution was heated to 9 G ° C and kept at this temperature for 2 minutes before cooling to 7 Q ° C. Secondly, 55.4 g of propanol gas was added, and the synthesis solution was heated to 8 Q ° C and kept at this temperature for 1 minute. After cooling to 70 ° C, 21.8 g of isopropylated titanium was added. Next, dissolve 11.4 g of lanthanum nitrate into 20? Glacial acetic acid, and add this to the solution. Finally, in order to stabilize the solution and adjust the viscosity to an appropriate value, add 10 ml of ethylene glycol, 5 ml of propanol and 2.5 ml of demineralized water. The PL Z T lyogel was applied to the first dielectric layer by liquid immersion in the same manner as described in Example 3. The liquid-immersed part is burned at 6 Gfl ° C to transform the second layer into P L Z T. The 4 layers of P L Z T are applied by immersion liquid immersion and such a fire to prepare drops for smoothing the phosphor layer. To a total thickness of 5 cm. 1 4 8 _ (Please read the precautions on the back before filling in this page) 丨 Binding-The size of the paper is applicable to China National Standards (CNS) A 4 specifications (210 X 297 mm) 82. 5. 20,000 V. Inventions Description (47) A6, B6, and the current limit voltage is about 5 to 7, with a good energy, good light, good energy, Lb, and tf. The technique of stupid technique with this 37 is the same as the test. The publication of this article is a combination of all the things that are indicated. The reminder refers to the standard water in II. Those who have a technical institute should indicate the specifics and make sure that the other forms of the table are the same as C. The test enrollment is not good enough, and the demonstrative language used in the demonstrative description is pretended to be clear and clear, and the clear language is LC = 1 and the language is used in the standard calculation mode. This is not used in c. Restricted profits should be applied for encirclement. The civilization is issued as it is known, and the system is limited, and it is a bit of a wait-and-see paradigm (please read the precautions on the back and then write this page). The size of the paper printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs is applicable to the Chinese National Standard (CNS) Grade 4 (210 X 297 mm) 82. 5. 20,000
Claims (1)
Applications Claiming Priority (2)
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US88043692A | 1992-05-08 | 1992-05-08 | |
US99654792A | 1992-12-24 | 1992-12-24 |
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TW320815B true TW320815B (en) | 1997-11-21 |
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TW82103846A TW320815B (en) | 1992-05-08 | 1993-05-17 |
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Cited By (1)
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US8721117B2 (en) | 2007-08-31 | 2014-05-13 | Lg Innotek Co., Ltd. | Lighting device |
-
1993
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- 1993-05-17 TW TW82103846A patent/TW320815B/zh active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US8721117B2 (en) | 2007-08-31 | 2014-05-13 | Lg Innotek Co., Ltd. | Lighting device |
TWI457514B (en) * | 2007-08-31 | 2014-10-21 | Lg Innotek Co Ltd | Lighting device |
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