JP2000260332A - Gas discharge panel and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To highly improve reliability of a plasma display panel at low cost. SOLUTION: A substrate having a display electrode and an address electrode formed on a glass substrate is provided with a surface treatment with a siloxane oxide thin film 131 or a titanium oxide thin film 181 of a few hundreds angstroms or less to retain a breakdown voltage even if a dielectric glass layer is formed thinner, furthermore, the discharge voltage is prevented from increasing, and a plasma display panel with high brightness can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas discharge panel characterized by forming a dielectric and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, expectations for high-definition and large-screen televisions including high-definition televisions have been increasing. CRTs are superior to plasma displays and liquid crystals in terms of resolution and image quality, but are not suitable for large screens of 40 inches or more in terms of depth and weight.

[0003] On the other hand, liquid crystal has excellent performance such as low power consumption and low driving voltage, but there are limitations on the size of the screen and the viewing angle. In contrast, a gas discharge panel, that is, a plasma display panel (hereinafter, P
DP) is capable of realizing a large screen.
Products of the 0-inch class have been developed.

Conventionally, an AC type PDP as shown in FIG. 7 has been known as an example of a gas discharge panel. Hereinafter, a panel configuration of a conventional PDP and its operation will be described with reference to the drawings.

FIG. 6 is a perspective view of a main part of a conventional AC type (AC type) PDP. In FIG. 6, reference numeral 60 denotes a front plate, and 65 denotes a back plate. In the PDP, a front plate 60 and a back plate 66 are opposed to each other, and a sealing member (not shown) made of low-melting glass is formed between outer peripheral edges to form a space for gas discharge. It is stopped, and 300 Torr to 500 Torr
In this configuration, a rare gas of r (mixed gas such as helium, xenon, or neon) is sealed.

The front plate 60 has a display electrode 62 composed of a silver electrode formed on a front glass substrate 61, on which a dielectric layer 63 functioning as a capacitor and a protective film 64 of a magnesium oxide film are covered. . The back plate 65 includes a back glass 66, a data electrode 67 patterned on the surface of the back glass 66, a back plate dielectric 68 formed to cover the back electrode 66, a plurality of barrier ribs 69, and a plurality of barrier ribs 69. It is composed of RGB phosphors 70 applied between them. Here, the partition wall 69 is a unit for partitioning the gas discharge space. The space 71 partitioned in this manner becomes a light emitting area, and the phosphor 70 is applied to each light emitting area. The partition 69 and the data electrode 67 are formed in the same direction, and the display electrode 62 is orthogonal to the data electrode 67.

In the PDP configured as described above, by applying a voltage to the data electrode 67 and the display electrode 62 at an appropriate timing, a discharge is generated in the space 71 corresponding to the display pixel and divided by the partition wall 69. Happen, ultraviolet rays are generated,
Visible light is emitted from the RGB phosphor 70 excited by ultraviolet rays, and is displayed as an image.

Next, a method for manufacturing such a conventional PDP will be described.

The front plate 60 and the rear plate 65 are manufactured separately. First, silver or Cr—Cu—Cr is formed as a display electrode 62 on the front glass 61. In general, silver electrodes are formed by pattern-printing a silver paste using a screen printing method, drying and baking to obtain an electrode having a predetermined thickness and width. In the case of a Cr-Cu-Cr electrode, a film is laminated using a thin film forming technique such as a sputtering method or an evaporation method, and is patterned into a predetermined shape using a photolithography method.

The dielectric layer 63 is formed by applying a dielectric paste a plurality of times using a screen printing method or the like so as to have a predetermined thickness.
It is formed by repeating printing and drying. Recently, other methods such as a roll coating method have been used, but the same applies to obtaining a dielectric layer using a dielectric paste. After forming the dielectric layer 63, a protective film 64 made of magnesium oxide is formed using an electron beam evaporation method so as to cover the dielectric layer.

As for the back plate 65, a data electrode 67 is formed on a back glass 66, a back plate dielectric 68 is coated and baked so as to cover the data electrode 67, and a partition material is applied on one surface of the back plate by printing and drying. After that, a portion where the partition wall 69 is not formed is scraped off by sandblasting, and the partition wall 69 is formed into a line shape through a firing step. After that, the phosphor 70 is filled between the partition walls 69 by a printing method or the like,
It is made by drying and firing.

The front plate 60 and the rear plate 65 completed in this way are coated with a low-melting glass as a sealing member, sealed by firing, and evacuated from the chip tube. The gas is sealed, the chip is turned off, and the panel is completed.

[0013]

The pixel level of the high-definition television of full specs which is expected in recent years is 1920 × 1125 pixels, the cell pitch is also 42 inch class, and 0.15 mm × 0.48 mm. The area is as fine as 0.072 mm2. When a high-definition television is manufactured with the same 42-inch size, when compared with the conventional NTSC (640 x 480 pixels, cell pitch 0.43 mm x 1.29 mm, cell area 0.55 mm2) in one pixel area, , 1/7 to 1/8.

Therefore, not only the distance between the discharge electrodes (display electrodes) is shortened, but also the discharge space is narrowed. In particular, the dielectric glass layer has a reduced cell area, so that the same capacity as a capacitor is secured. Then, it is necessary to make the film thickness thinner than before.

However, the conventionally used dielectric glass (lead oxide glass or bismuth oxide glass) has poor wettability with silver, chromium, and copper which are originally used for electrodes, and is thin and uniform. It was difficult to form body glass.

In addition, in a conventional PDP in which display electrodes and address electrodes are respectively formed on front and rear glass substrates (61, 65 in FIG. 6), usually,
Since the electrode protrudes into the dielectric glass layer side corresponding to its thickness, the electric field tends to locally increase around the electrode of the dielectric glass layer. For example, when a signal is sent between the display electrode and the data electrode (address There is a problem in terms of withstand voltage that dielectric breakdown is easily caused at the time of discharge).

In order to solve this problem, SiO ₂ or Al ₂ O ₃ is used as an intermediate film between the electrode and the dielectric glass layer by spin coating or dipping (dipping) for 500 hours.
(For example, see Japanese Unexamined Patent Publication No.
No. 94225) has been proposed, but when an intermediate film is formed, two composite dielectric layers are formed, and depending on the location, the same capacitance of each cell cannot be ensured due to a shift in the dielectric constant, or an intermediate film of 500 A or more is required. At the present time, when a film is formed, sufficient characteristics have not been obtained because bubbles and uneven thickness occur, as in the case of forming a dielectric layer.

Further, a CVD method is used between the electrode and the dielectric glass layer.
Method of Providing Metal Oxide that Generates Hydroxyl Group (OH Group) on Electrode Surface by Dielectric Method as Dielectric Layer (Japanese Patent Application No. 9-326)
No. 818) has been proposed, but the characteristics are satisfied, but the cost is considerably increased, which is not sufficiently satisfactory in practice.

Accordingly, the present invention provides a plasma display panel which is highly reliable even in the case of a fine cell structure by satisfying such a problem of dielectric strength and overcoming the practical possibility. The purpose is to:

[0020]

Means for Solving the Problems In order to achieve the above object, a first invention is to provide an electrode formed on a substrate, an oxide thin film coated on a substrate including the electrode, and an oxide thin film formed on the oxide thin film. And a dielectric layer formed by applying and firing a glass paste.

Here, the thickness of the oxide thin film is 500 A (angstrom) or less, and a siloxane-based thin film, a siloxane-based monomolecular film, or the like is preferable. Electrode thickness is 1μm
It is preferable that it is above.

According to this structure, since the oxide thin film is formed on the substrate including the electrodes before the inorganic dielectric is formed, the oxide thin film has good wettability (compatibility) with the underlying electrode, is dense, and is dense. Since the surface of the oxide thin film has very good wettability with glass, the thickness of the dielectric layer formed thereon can be reduced.

Therefore, it is possible to reduce the discharge voltage and to improve the dielectric strength of the dielectric. This oxide thin film is a thin film having a thickness of about 500 A or less, or a monomolecular film, and is not an intermediate film having a predetermined film thickness as disclosed in JP-A-62-194225, but an electrode surface. Is treated as a surface treatment for improving wettability. Therefore, the apparent dielectric constant of the dielectric layer hardly changes, and in each cell, a uniform capacitance of only the dielectric layer is formed.

Further, a second invention is a method for manufacturing a gas discharge panel comprising an electrode formed on a substrate and a dielectric material coated on the electrode, wherein at least the electrode formed on the substrate has The method includes a step of applying and drying a surfactant alone or a solution containing the surfactant, and a step of applying a dielectric paste on the attached and dried surfactant layer.

Here, the thickness of the electrode is preferably 1 μm or more. Further, the surfactant is preferably an organic silicon compound or an organic titanium compound.

According to this manufacturing method, since the oxide thin film is formed on the substrate including the electrodes before the dielectric is formed, the oxide thin film has good wettability (compatibility) with the underlying electrode, is dense, and is dense. Since the surface of the oxide thin film has very good wettability with glass, the thickness of the dielectric layer formed thereon can be reduced.

The oxide thin film is a thin film having a thickness of about 500 A or less or a monomolecular film, and is formed as a surface treatment film for improving the wettability of the electrode surface. Also,
The step of forming the oxide thin film before forming the dielectric,
Since it is a process of only attaching and drying the solution, the wettability at the time of forming the dielectric can be improved by a very inexpensive and simple method.

According to this manufacturing method, the discharge voltage of the gas discharge panel can be lowered and the dielectric strength of the dielectric can be improved. At the same time, the manufacturing process is extremely simple, so that the manufacturing cost is reduced. Panels can be manufactured without height.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the present invention will be outlined. First, in FIG. 6, assuming that the area of the display electrode 62 is S, the thickness of the dielectric layer on the display electrode is d, the dielectric constant of the dielectric layer is ε, and the charge on the dielectric layer is Q, The capacitance C between the data electrode 67 and the data electrode 67 is expressed by the following equation (1).

(Equation 1) C = εS / d Further, if the voltage applied between the display electrode 62 and the data electrode 67 is V, and the charge amount Q accumulated on the dielectric layer on the display electrode 62 is V And Q have the relationship of the following equation 2.

(Equation 2) V = dQ / εS (However, the discharge space is in a plasma state during the discharge and becomes a conductor.) In the above-mentioned equations 1 and 2, when d is reduced, the capacitance C as a capacitor becomes larger. And the discharge voltage V at the time of addressing or display is reduced.

That is, by reducing the thickness of the dielectric layer, a large amount of electric charge is accumulated even when the same voltage is applied, so that a higher capacity and a lower discharge voltage can be achieved. However, if the thickness of the dielectric layer is simply reduced, the dielectric breakdown voltage is reduced, and the dielectric layer is easily broken down when an address pulse or a display pulse is applied.

Therefore, the inventors of the present invention applied a solution prepared by dissolving an organic silicon compound or an organic titanium compound in a solvent of about several mol% to an electrode formed on a substrate, and dried the solution to prepare a solution having a thickness of several hundred μm.
By forming a monomolecular oxide thin film of about the same degree, controlling the wettability of the electrode surface, and forming a thin dielectric layer thereon, the discharge voltage is lower than that of the conventional NTSC and the static electricity of the cell is reduced. The isolation voltage has been improved while securing the capacity.

Here, as a method of attaching the substrate on which the electrodes are formed, the solution is immersed in the solution, sprayed on the substrate,
Vapor deposition under reduced pressure, spin coating, brush coating, and the like are conceivable. That is, by improving the wettability of the electrode surface formed on the substrate, a uniform and dense dielectric layer free of bubbles and irregularities is formed at the time of forming the dielectric layer, thereby causing dielectric breakdown. It becomes difficult to do.

Accordingly, it is possible to reduce the thickness of the dielectric layer to a thickness less than the conventional thickness while improving the dielectric strength voltage. This makes it possible to lower the discharge voltage, improve the reliability of the addressing, and improve the panel luminance.

FIG. 1 is a perspective view of a main part of an AC surface discharge type PDP according to the present embodiment, FIG. 2 is a sectional view taken along line XX in FIG. 1, and FIG. 2 is a sectional view taken along line YY in FIG. Although only three cells are shown in these figures for convenience, a PDP is formed by arranging a large number of cells emitting red (R), green (G), and blue (B) in actuality. ing.

This PDP has a display electrode 12 on a front glass 11 as shown in each figure, and an oxide thin film 13 on it.
1 and a dielectric layer 13, a front plate 10 and a back glass 16 on which data electrodes 17 are provided, on which an oxide thin film 181 and a back plate dielectric 18, partition walls 19, R,
The back plate 15 on which the phosphors 20 of the respective colors G and B are arranged is bonded, and a discharge gas is sealed in a discharge space 21 formed between the front plate 10 and the back plate 15. It is manufactured as shown below.

Preparation of front plate 10: The front plate 10 has a display electrode 12 formed on a front glass 11, and in this embodiment, an oxide thin film 131 is formed thereon by an immersion method, and then a dielectric constant ε is formed.
Is formed by covering with 10 or more dielectric layers 13 and further forming a protective layer 14 on the surface of the dielectric layer 13.

The display electrode 12 is formed on the front glass 11 as follows. This will be described with reference to FIG.

First, a photoresist having a thickness of 5 μm is applied on the front glass 11, and the photoresist is removed by exposing and developing only portions where the display electrodes 12 are to be formed so that the photoresist disappears.

Next, the silver electrode paste is embedded in the front glass substrate 11 at a place where the resist has been removed by a screen printing method, and after drying, only the resist is peeled off by using a peeling solution. Is fired to form the display electrode 12.

(Regarding Formation of Oxide Thin Film and Dielectric Layer and Formation of Protective Layer by Immersion Method) Next, an oxide thin film is prepared by an immersion method as follows. FIG. 5 shows the oxide thin film 1
It is the process schematic used when forming 31,181.

As shown in FIG. 5, first, immersing the glass substrate on which electrodes are formed in the hexachlorodisiloxane (Cl ₃ SiOSiCl ₃₎ the number mole% inclusive cyclohexane solution as a surfactant.

As the surfactant, for example, SiC
_{l 4, SiHCl 3, SiH 2} Cl 2, Cl- (SiCl 2
O) n-SiCl ₃ (n is an integer), Cl ₃ Si- (C
H ₂ ) chlorosilane-based organosilicon compounds such as n-SiCl ₃ (n is an integer), or a mixture thereof, or Si
(OCH ₃ ) ₄ , SiH (OCH ₃ ) ₃ , SiH ₂ (OC
_{H 3) 2, OCH 3 -} (Si (OCH 3) 2 O) n-Si
(OCH _{3) 3} (n is an _{integer), (OCH 3) 3 Si-} (CH
_{2) n-Si (OCH 3} ) 3 (n is an integer) silane-based organic silicon compounds, such as, or mixtures thereof, _{or, Si (OC 2 H 5)} 4, SiH (OC 2 H 5) 3, SiH
₂ (OC ₂ H ₅ ) ₂ , OC ₂ H ₅ — (Si (OC ₂ H ₅ ) ₂ O)
n-Si (OC ₂ H ₅ ) ₃ (n is an integer), (OC ₂ H ₅ ) ₃ S
_{i- (CH 2) n-Si} (OC 2 H 5) 3 (n is an integer) silane-based organic silicon compounds, such as, or mixtures such as alkoxysilane organosilicon compound thereof, or tetraisopropyl titanate (TPT), And alkoxytitanium-based organic titanium compounds such as tetra-n-butyl titanate (TBT) and tetrastyryl titanate (TST).

The solvent is selected depending on the surfactant used, but may be water, alcohol, aliphatic hydrocarbon, aromatic hydrocarbon and the like.

Next, the immersed glass substrate is pulled up,
Dry in a drying oven to remove the solvent. Then, the surfactant remaining on the substrate reacts with the glass and the surface of the electrode to form an oxide thin film having a thickness on a molecular layer level.

At the same time, the surface of this oxide thin film has hydroxyl groups (O
H group), so that the wettability of the surface is significantly improved. At this time, when the substrate is immersed, the back surface of the substrate also becomes a film covered with a hydroxyl group (OH group), but no inconvenience occurs in the subsequent panel manufacturing process.
If necessary, it is preferable to prevent adhesion to the back surface.

Next, the dielectric layer 13 having a dielectric constant ε of about 10
To form Examples of the material of the dielectric layer 13 include lead oxide (PbO), boron oxide (B ₂ O ₃ ), and silicon oxide (Si).
O ₂ ) and aluminum oxide (Al ₂ O ₃ ), or bismuth oxide (Bi ₂ O ₃ ), zinc oxide (Z
nO), boron oxide (B ₂ O ₃ ), silicon oxide (SiO ₂ ),
Calcium oxide (CaO) and the like.

Further, by adding TiO ₂ to the above glass composition, it is possible to further improve the dielectric constant and increase the capacitor capacity. However, since the content of TiO ₂ is but significantly improves the dielectric constant ε if more than 5 wt%, the light transmittance of the content exceeds 10 wt% dielectric glass layer is decreased, the TiO ₂ It is desirable to use glass having a content of 5 to 10% by weight.

The dielectric layer 13 is formed by screen-printing a dielectric glass paste in which each of the above oxides is mixed with an organic binder and baking it at 540 ° C., for example.

The effect of improving the panel brightness and reducing the discharge voltage becomes remarkable as the thickness of the dielectric layer 13 becomes thinner. Therefore, it is desirable to set the dielectric layer 13 as thin as possible as long as the dielectric breakdown voltage is not reduced.

Therefore, in the present embodiment, the dielectric layer 13
Is set to a predetermined thickness smaller than the conventional thickness of about 20 μm.

Finally, a protective layer 14 made of MgO is formed on the dielectric layer 13. In this embodiment mode, the film thickness is about 1 μm by using an electron beam evaporation method.

Preparation of back plate 16: First, a concave portion of a resist is formed on the rear glass substrate 66 by the above-described photoresist method, and a data electrode 17 as a second electrode is formed in this concave portion in the same manner as the display electrode 12. and (liftoff method), after forming the oxide film 181 at the case as well as chemisorption of the front panel 10 thereon, said by baking a screen printing _{PbO-B 2 O 3 -SiO 2} -TiO 2 -
An Al ₂ O ₃ based dielectric layer 18 is formed.

Next, glass partitions 19 are fixed at a predetermined pitch, and a red (R)
1 of phosphor, green (G) phosphor and blue (B) phosphor
The phosphor 70 is formed by disposing the two. As the phosphors of the respective colors R, G, and B, phosphors generally used in PDPs can be used. Here, the following phosphors are used. "Red _{phosphor": (YXGd1-X) BO 3} : Eu3 + "green phosphor": Zn ₂ SiO _4: Mn "blue _{phosphor": BaMgAl 10 O 17: Eu2 +} PDP by bonding the front plate 10 and back plate 16 Production: Next, the front plate 10 and the rear plate 16 produced as described above are adhered to each other using sealing glass, and the inside of the discharge space 21 partitioned by the partition wall 19 is subjected to high vacuum (8
After evacuating to 10 ^-7 Torr), a discharge gas having a predetermined composition is sealed at a predetermined pressure to produce a PDP.

The PDP manufactured in this manner has a structure in which each electrode (display electrode and data electrode) is densely bonded to the dielectric layer and has very few bubbles.

In this embodiment, the cell size of the PDP is set to 0.2 mm or less and the distance d between the discharge electrodes 12 is set to 0.1 mm or less so as to be suitable for a 40-inch class high-definition television. .

The composition of the discharge gas to be filled is a He-Xe type conventionally used, but the content of Xe is 5% by volume or more, and the filling pressure is 500 to 760 Torr.
By setting to, the light emission luminance of the cell is improved.

In the PDP of this embodiment as described above, the discharge voltage can be reduced by forming an oxide thin film by a simple method, so that the load applied to each component of the panel during operation is reduced.

In addition, since the withstand voltage has been improved,
For example, it is possible to maintain excellent initial performance such as high panel luminance and low discharge voltage for repeated use over a long period of time, and it is excellent in reliability.

[0061]

Examples [Examples 1 to 12 and Comparative Example 13]

[0062]

[Table 1]

The sample No. shown in Table 1 was used. 1-14 P
DP formed each oxide thin film on both the discharge electrode and the address electrode based on the above-described embodiment.

Sample No. In Nos. 1, 3 to 5, 8 to 9, and 11, siloxane-based oxide thin films were formed by using an organic silicon compound surfactant by using an immersion method.

Sample No. In Nos. 10 and 14, titanium oxide thin films were formed using an organic titanium compound surfactant by an immersion method.

The sample No. Nos. 6, 7, and 12 each formed an oxide thin film on a sample by evaporating a solution containing a surfactant under reduced pressure. Sample No. In Nos. 2 and 13, the solution was applied by spray coating.

After the surfactant was attached, it was dried at each temperature shown in the table, and then PbO—B ₂ O ₃ —SiO ₂
A dielectric layer having a dielectric constant ε of 12 and a thickness of 12 μm made of a —TiO ₂ —Al ₂ O ₃ system was formed by coating and firing.

The cell size of the PDP is determined by the size of the partition wall 24 in accordance with the display for a 42-inch high-definition television.
Was set to 0.1 mm, the interval (cell pitch) between the partition walls 24 was set to 0.15 mm, and the distance d between the discharge electrodes 12 was set to 0.05 mm. In addition, a He-Xe-based mixed gas having an Xe content of 5% by volume was sealed at a sealing pressure of 600 Torr. The MgO protective layer 14 was 1 μm in thickness and used an electron beam evaporation method.

[Experiment] Experiment 1; Panel luminance was measured for 1 to 24 PDPs. The luminance is about 170 V at a sustaining voltage of about 30 V and a frequency of about 30 K, which is a condition under which dielectric breakdown is difficult in each prototype PDP.
It is a measured value when discharging at about Hz. (Table 1) also shows the results.

Experiment 2: Sample No. 1-24 PD
Ten pieces each of the same as P were produced and subjected to an accelerated life test.

The accelerated life test was performed under severer conditions than normal use conditions.
V. The battery was discharged continuously at a frequency of 50 KHz for 4 hours. Thereafter, the state of breakdown of the dielectric glass layer and the like in the panel (insulation withstand voltage defect of the panel) was examined. The results are also shown in (Table 1).

Consideration: Sample No. According to the luminance measurement results of 1 to 24, the panel luminance of the conventional PDP is 400 cd / m ^2.
Degree (Nikkei Electronics 1997 Vol.5
-5 Refer to page 106).

From this, it can be seen that the panel brightness can be improved by forming the dielectric layer thin.

From the result of the accelerated life test, the type of electrode (A
g and Cr-Cu-Cr), sample No. 1 in which a siloxane-based oxide thin film was formed on the electrode using an organosilicon compound surfactant. Sample Nos. 1 to 12 and a titanium oxide thin film formed using a surfactant of an organic titanium compound. In the PDPs Nos. 14 to 23, Sample Nos. In which no oxide thin film was formed on the electrodes were used. It is clear that the PDPs 13 and 24 are superior in withstand voltage.

From these results, it is possible to improve the wettability of the surface of the electrode by chemically modifying (coating) the surface of the electrode with an oxide thin film, that is, by performing a surface treatment. It can be seen that, even when the body layer is formed to be 15 μm or less, which is thinner than the conventional one, to improve the luminance, the withstand voltage can be improved.

The sample No. With 13,24 PDPs,
In the sample in which the oxide thin film was not formed, the thickness of the dielectric glass layer on the electrode was changed to the sample No. 1-12 and 14-
It can be seen that the dielectric breakdown easily occurs though it is thicker than that of No. 23.

In this embodiment, PbO-B is used for the dielectric.
Dielectric constant ε of ₂ O ₃ —SiO ₂ —TiO ₂ —Al ₂ O ₃ system
And the dielectric layer having a film thickness of 12 μm was used. However, the same result can be obtained by using other dielectric materials.

In this example, the concentrations of the surfactants as shown in Table 1 were used. However, the concentration is not limited to this, because the concentration is limited by the film thickness to be formed by coating.

Further, the method for forming an oxide thin film is not limited to the dipping method, the spraying method, and the vapor deposition method under reduced pressure of this embodiment, but may be a method capable of applying a surfactant, for example, a spin coating method. Needless to say, such a method is also possible.

Although Ag and Cr-Cu-Cr are used for the electrodes, the same result can be obtained by using other electrode materials.

[0081]

As described above, the first aspect of the present invention relates to an electrode formed on a substrate and a siloxane-based or titanium-based oxide coated (surface-treated) on a substrate including the electrode. By forming a gas discharge panel formed by applying and firing a glass paste on a thin film, a PDP (plasma display panel) having high luminance at a low discharge voltage and high reliability in addressing and durability can be obtained. .

According to a second aspect of the present invention, there is provided a method for manufacturing a gas discharge panel having the above-described structure, wherein at least a surfactant alone or a solution containing the surfactant is coated on an electrode formed on a substrate. A process of attaching and drying, and a process of applying a dielectric paste on the surface of the attached and dried surfactant layer, so that the wettability of the electrode formed on the substrate by a simple method is improved. As a result, a PDP with high luminance at low discharge voltage and high reliability in addressing and durability can be obtained without increasing the cost, thereby increasing industrial value. is there.

[Brief description of the drawings]

FIG. 1 is a perspective view of a main part of a plasma display panel according to an embodiment of the present invention.

FIG. 2 shows the X of the plasma display panel of the present embodiment.
-X-ray sectional view

FIG. 3 shows Y of the plasma display panel of the present embodiment.
-Y section view

FIG. 4 is a schematic view showing a method of forming an electrode on a front glass.

FIGS. 5 (a) and 5 (b) show P in the embodiment of the present invention.
Schematic diagram of the chemisorption method used to manufacture DP

FIG. 6 is a perspective view of a main part of a conventional AC type PDP.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Front plate 11 Front glass 12 Display electrode 13 Dielectric layer 14 Protective film 15 Back plate 16 Back glass 17 Data electrode 18 Dielectric layer 19 Partition wall 20 Phosphor 21 Discharge space 51 Adsorption solution 52 Drying furnace 131 Oxide by chemical adsorption method Thin film 181 Oxide thin film by chemisorption method

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Ryuichi Murai 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Akira Shiokawa 1006 Odaka Kadoma, Kadoma City Osaka Prefecture Matsushita Electric Industrial Co., Ltd. 72) Inventor Hiroyoshi Tanaka 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. (reference) MA26

Claims (12)

[Claims] 1. A gas discharge panel comprising an electrode formed on a substrate and a siloxane-based thin film coated on the substrate including the electrode or the electrode. 2. The gas discharge panel according to claim 1, wherein the siloxane-based thin film is a siloxane-based monomolecular film. 3. An electrode formed on a substrate, an oxide thin film coated on a substrate including the electrode, and a dielectric layer formed by applying and firing a glass paste on the oxide thin film. Gas discharge panel. 4. The gas discharge panel according to claim 3, wherein the thickness of the electrode is 1 μm or more. 5. The gas discharge panel according to claim 3, wherein the oxide thin film is a siloxane-based thin film. 6. The gas discharge panel according to claim 3, wherein the thickness of the oxide thin film is not more than 500 Å. 7. The gas discharge panel according to claim 3, wherein the oxide thin film is a siloxane-based monomolecular film. 8. The gas discharge panel according to claim 3, wherein the oxide thin film is a titanium oxide-based thin film. 9. A method for manufacturing a gas discharge panel including a dielectric material coated on an electrode formed on a substrate, wherein the electrode includes at least a surfactant alone or the surfactant. A method for manufacturing a gas discharge panel, comprising: a step of attaching and drying a solution; and a step of applying a dielectric paste on the attached and dried surfactant layer. 10. The electrode according to claim 9, wherein the thickness of the electrode is 1 μm or more.
A method for manufacturing the gas discharge panel according to the above. 11. The method for manufacturing a gas discharge panel according to claim 9, wherein the surfactant contains an organic silicon compound. 12. The method for manufacturing a gas discharge panel according to claim 9, wherein the surfactant comprises an organic titanium compound.