JP3414236B2 - Plasma display panel - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display panel used for a display device and the like, and more particularly to improvement of a dielectric layer and a material of a dielectric glass layer of the plasma display panel.

[0002]

2. Description of the Related Art In recent years, expectations for high-definition and large-screen televisions such as high-definition television have been increasing. CRTs are superior to plasma displays and liquid crystals in terms of resolution and image quality, but are not suitable for large screens of 40 inches or more in terms of depth and weight. On the other hand, liquid crystal has excellent performance of low power consumption and low driving voltage.
There are limits to the screen size and viewing angle. On the other hand, the plasma display can realize a large screen, and a product of 40-inch class has already been developed (for example, functional material February 1996 issue Vol 1.16, No. 2).
(Page 7).

FIG. 6 is a perspective view showing a main part of a conventional AC type plasma display panel. In FIG. 6, reference numeral 51 denotes a front glass substrate (front cover plate) made of a sodium borosilicate glass by the float method, on which a display electrode 52 made of a silver electrode exists, and a capacitor is placed on the display electrode 52. The dielectric glass layer 53 and the magnesium oxide (MgO) dielectric protective layer 54, which function as a cover, are covered.

55 is a rear glass substrate (back plate)
An address electrode (silver electrode) 56 and a dielectric glass layer 57 are provided on the back glass substrate 55, and barrier ribs 58 and phosphor layers 59 are provided thereon, and discharge gas is discharged between the barrier ribs 58. It is the discharge space 60 to be enclosed.

[0005]

The pixel level of a full-spec high-definition television, which has been expected in recent years, has a pixel number of 1920 × 1125, a cell pitch of 42 inches class, and a cell size of 0.15 mm × 0.48 mm. The area is as fine as 0.072 mm ² . When a high-definition television with the same size of 42 inches is manufactured, it is compared with the conventional NTSC (the number of pixels is 640 × 480, the cell pitch is 0.43 mm × 1.29 mm, the area of one cell is 0.55 mm ² ) with the area of 1 pixel. Then, the fineness is 1/7 to 1/8.

Therefore, not only the distance between the discharge electrodes (display electrodes) is shortened, but also the discharge space is narrowed. In particular, the dielectric glass layer tries to secure the same capacitance as a capacitor because the cell area is reduced. Then, it becomes necessary to make the film thickness thinner than before.

However, the conventionally used dielectric glass (lead oxide type glass or bismuth oxide type glass) has poor wettability with silver, chromium and copper, which are originally used for electrodes, and these dielectric layers are thin and uniform. Forming body glass has been difficult.

In addition to the above, display electrodes and address electrodes are formed on the front and rear glass substrates (52 and 56 in FIG. 6). In a conventional plasma display panel, electrodes are usually provided on the dielectric glass layer side. However, the electric field is likely to locally increase around the electrodes of the dielectric glass layer, for example, when a signal is sent between the display electrode and the address electrode (when an address discharge is generated). There is a problem in terms of dielectric strength, which is likely to cause dielectric breakdown.

In order to solve this problem, a method of forming SiO ₂ or Al ₂ O ₃ by a sol-gel method as an intermediate film between the electrode and the dielectric glass layer by spin coating or dipping (500 to 1000 Å) Have been developed, but sufficient characteristics have not been obtained (see, for example, JP-A-62-62).
-194225).

Therefore, an object of the present invention is to provide a plasma display panel having high reliability even in the case of a fine cell structure by overcoming such a problem of withstand voltage.

[0011]

To achieve the above object, the present invention provides a front cover plate having a first electrode and a dielectric glass layer covering the first electrode, and a second cover.
A plasma display panel in which a back plate on which an electrode of 1) and a phosphor layer are arranged face each other.
Alternatively, after coating the second electrode with polysilazane, it is thermally decomposed in the atmosphere to form a SiO ₂ film, and a dielectric glass layer or SiO ₂ , Al ₂ O ₃ or SiO ₂ and Al by a CVD method is formed thereon. _The formation of the compound of ₂ O ₃ has an effect that the dielectric breakdown is unlikely to occur even if the dielectric glass layer or the dielectric layer is formed thin.

That is, the SiO ₂ film formed by thermally decomposing polysilazane in the atmosphere is a polysilazane [(SiH ₂
Since -NH) _n ] does not contain a carbon (C) component, it is dense and has good wettability (well-fitting) with the underlying electrode, and moreover, it is a conventional example (for example, JP-A-62-1942).
No. 25 gazette), there is no problem of shrinkage of the film and residual carbon during thermal decomposition such as a sol-gel film using an alkoxide system, and the SiO ₂ film is not cracked (for example, Convertec April 1995 issue). ).

Therefore, even if an SiO ₂ or Al ₂ O ₃ film or a dielectric glass layer is formed on the SiO ₂ film obtained by the thermal decomposition of polysilazane by the CVD method, the dielectric breakdown is unlikely to occur. A highly dielectric layer can be formed thin. Therefore, it is possible to lower the discharge voltage and at the same time improve the dielectric strength of the dielectric.

Further, the brightness of the panel can be improved by thinning the dielectric layer. However, although it is possible to increase the thickness of the SiO ₂ film by using polysilazane, 3 μm is the limit in this method.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION First, the present invention will be outlined. First, in FIG. 6, assuming that the area of the display electrode 52 is S, the thickness of the dielectric glass layer on the display electrode is d, the dielectric constant of the dielectric glass layer is ε, and the charge on the dielectric glass layer is Q, the display electrode 52 The electrostatic capacitance C between the address electrode 56 and the address electrode 56 is expressed by the following equation 1.

(Equation 1) C = εS / d If the voltage applied between the display electrode 52 and the address electrode 56 is V and the amount of charge Q accumulated on the dielectric glass layer on the display electrode 52 is: There is a relationship of the following expression 2 between V and Q.

(Equation 2) V = dQ / εS (However, since the discharge space is in a plasma state during discharge, it becomes a conductor.) In the above Equations 1 and 2, when d is reduced, the electrostatic capacitance C as a capacitor is obtained. In addition, the discharge voltage V becomes large and the discharge voltage V at the time of addressing and displaying decreases.

That is, by reducing the thickness of the dielectric glass layer, a large amount of electric charge is accumulated even when the same voltage is applied, so that the capacity can be increased and the discharge voltage can be reduced.

However, if the film thickness of the dielectric glass layer is simply reduced, the dielectric strength voltage is reduced, and the dielectric layer is liable to be broken down when an address pulse or a display pulse is applied.

Therefore, the inventors coated polysilazane on the electrodes on the front cover plate and the back plate and baked it in the air to form a SiO ₂ film of 0.1 μm.
.About.3.0 .mu.m and then coated with lead oxide glass or bismuth oxide glass to form a dielectric layer, or Si formed from polysilazane.
SiO ₂ , Al ₂ O _3, or by CVD on the O ₂ film, or
By applying a method of coating a compound of SiO ₂ and Al ₂ O ₃ , the discharge voltage and the withstand voltage were improved while ensuring a discharge voltage and a cell capacitance equal to or lower than the conventional NTSC.

That is, polysilazane is coated on the electrodes on the front cover plate or the pack plate and then baked in the atmosphere to thinly coat the SiO ₂ film with a thickness of 0.1 μm to 3.0 μm. The wettability of the body glass layer or the SiO ₂ or Al ₂ O ₃ film formed by the CVD method with respect to the electrodes can be solved, and bubbles or irregularities are generated in the dielectric glass layer or the SiO ₂ or Al ₂ O ₃ film formed by the CVD method. Uniform and dense glass layer and Si that do not generate
Since the O ₂ and Al ₂ O ₃ layers are formed, dielectric breakdown is less likely to occur.

Therefore, the dielectric glass layer and the dielectric layer can be thinned to the conventional thickness of 15 μm or less while improving the withstand voltage. As a result, the discharge voltage can be lowered, the reliability of addressing can be improved, and the panel brightness can be improved.

Here, the PbO-B ₂ O ₃ -SiO ₂ system and the PbO-B ₂ system which have been used conventionally and have a dielectric constant ε of about 10 are used.
O ₃ -SiO ₂ -ZnO, _{or, PbO-B 2 O 3 -SiO} 2
-Al ₂ O ₃ based dielectric glass has the effect of improving the brightness and lowering the discharge voltage by using a dielectric such as SiO _2, Al ₂ O ₃ by the CVD method having a dielectric constant ε of 4 or more. It becomes more prominent.

(Embodiment) FIG. 1 shows an AC surface discharge type plasma display panel (hereinafter referred to as "P") according to the present embodiment.
1) is a perspective view of a main part of FIG.
-X line arrow sectional view, FIG. 3 is a YY line arrow sectional view in FIG. Although only three cells are shown for convenience in these drawings, a PDP is actually configured by arranging a large number of cells that emit red (R), green (G), and blue (B) colors. ing.

As shown in each figure, this PDP has a discharge electrode (display electrode) 12 on a front glass substrate (front cover plate) 11, and a SiO ₂ layer 13a pyrolyzed from polysilazane in the air on it. , And dielectric glass or a compound of SiO ₂ , Al ₂ O ₃ or SiO ₂ and Al ₂ O _{3 formed} by the CVD method (dielectric glass layer 13)
And a rear glass substrate (back plate) 21 on which an address electrode 22 is provided, and a SiO ₂ layer 23a formed by thermal decomposition of polysilazane, and a dielectric glass or SiO ₂ , Al ₂ O ₃ layer 23,
The rear panel 20 having the barrier ribs 24, R, G, and B phosphor layers 25 arranged thereon is stuck together, and the discharge gas is enclosed in the discharge space 30 formed between the front panel 10 and the rear panel 20. It has a structure and is manufactured as shown below.

(Preparation of Front Panel 10: Manufacturing Method (1)) In the front panel 10, a discharge electrode (display electrode) 12 is prepared on a front glass substrate 11, and polysilazane is coated on the discharge electrode (display electrode) 12. After that, a SiO ₂ layer 13a obtained by firing in air is formed, covered with a dielectric glass layer 13 having a dielectric constant ε of 5 or more, and a protective layer 14 is further formed on the surface of the dielectric glass layer 13. It is made by doing.

(Preparation of Front Panel 10: Manufacturing Method (Part 2)) The SiO ₂ layer 13a obtained by coating polysilazane and firing in air was coated with SiO ₂ and Al ₂ O ₃ by the CVD method.
Alternatively, there are two methods in which the discharge electrode is covered with a layer 13 to which these compounds are adhered in an amount of 5 μm to 15 μm, and a protective layer 14 is further formed thereon. The discharge electrode 12 is formed on the front glass substrate 11 as follows. This will be described with reference to FIG.

First, a thickness of 5 μm is formed on the front glass substrate 11.
The photoresist is applied, and the photoresist is removed by exposing and developing only where the discharge electrode 12 is formed so that the photoresist is eliminated. Then, a silver electrode paste is screen-printed on the exposed portion of the front glass substrate 11 Embedded in the place where the resist is removed, and after drying, only the resist is peeled off by using a peeling solution or the like, and then Ag is baked to form a silver electrode (discharge electrode 12) as a first electrode.

The SiO ₂ layer is made of Ag using a polysilazane.
A method for coating the glass substrate on which the electrodes are formed will be described with reference to FIG.

(Formation of SiO ₂ Layer Using Polysilazane) FIG. 7 shows a SiO ₂ layer 1 using polysilazane.
It is a schematic diagram of a coating device used when forming 3a and 23a.

In this coating device, a solution 72 of polysilazane (SiH ₂ —NH) _n (80 wt% xylene, 20 wt% polysilazane) 71 is ejected from an elongated slit-shaped nozzle 72, and a discharge electrode or address electrode 74 is provided. The nozzle 72 or the substrate 73 is moved onto the obtained glass substrate 73 to apply polysilazane.

The thickness of polysilazane can be controlled by increasing or decreasing the molecular weight of polysilazane, the amount of xylene as a solvent,
Adjust according to the moving speed of the head or stage.

After the polysilazane solution is applied, it is dried and baked in the air to remove S on the substrate with electrodes.
An iO ₂ film is formed. The reaction of firing polysilazane in air to obtain SiO ₂ is represented by (Equation 3).

(Formula 3) (SiH ₂ —NH) + O ₂ → SiO ₂ + NH ₃ The thickness of the SiO ₂ layer formed by thermal decomposition of polysilazane in air is set to 0.1 μm to 3 μm. Such softening of the polysilazane into the SiO ₂ film does not cause separation of organic components other than hydrogen (H ₂ ), and is dense and has no residual carbon. Good wettability.

Next, SiO _{2 formed} by thermal decomposition of polysilazane
Dielectric layer (SiO ₂ , Al ₂ O ₃ or
A compound layer of SiO ₂ and Al ₂ O ₃ ) is prepared as follows. This will be described with reference to FIG.

(Formation of SiO ₂ , Al ₂ O ₃ Layer and Protective Layer by CVD Method) FIG. 5 shows SiO ₂ , Al ₂ O.
It is a schematic diagram of a CVD device used when forming _three layers 13a and 23a and a protective layer (MgO) 14.

This CVD apparatus is capable of performing both thermal CVD and plasma CVD.
A heater unit 46 for heating a glass substrate 47 (the front electrode 11 on which the discharge electrode 12 and the dielectric layer 13 are formed in FIG. 1) is provided in the D device body 45, and C
The inside of the VD device body 45 can be depressurized by an exhaust device 49. Further, a high frequency power source 48 for generating plasma is installed in the CVD device body 45.

The Ar gas cylinders 41a and 41b use a vaporizer (bubbler) for the argon [Ar] gas that is a carrier.
It is supplied to the CVD apparatus main body 45 via 42 and 43. The vaporizer 42 heats and stores a metal chelate that is a raw material (source) of the metal oxide layer, and blows Ar gas from the Ar gas cylinder 41a to evaporate the metal chelate and send it to the CVD apparatus body 45. You can do it.

Specific examples of the chelate include magnesium acetylacetone [Mg (C ₅ H ₇ O ₂ ) ₂ ] as a raw material of MgO which is a dielectric protective layer, and SiO which is a dielectric layer.
₂ , as a raw material for Al ₂ O ₃ , tetraethoxysilane [S
i (O.C ₂ H ₅ ) ₄ ], acetylacetone aluminum [Al (C ₅ H ₇ O ₂ ) ₃ ] or a mixture thereof.

The oxygen cylinder 44 supplies oxygen [O ₂ ] which is a reaction gas to the CVD apparatus main body 45.

(1) When performing thermal CVD using this CVD apparatus, the glass substrate 47 is placed on the heater portion 46 with the dielectric layer facing upward and heated to a predetermined temperature (250 ° C.). The pressure inside the reaction container is reduced by the exhaust device 49 (several tens Torr).

Then, the dielectric layer (SiO ₂ , Al
₂ O ₃ ), 13 ′, 23 ′ is formed in the vaporizer 42, and the protective layer (MgO) 14 is formed in the vaporizer 43. The chelate or alkoxide compound serving as the source is heated to a predetermined vaporization temperature. Meanwhile, the Ar gas cylinder 41a or 4
Ar gas is fed from 1b. At the same time, oxygen is supplied from the oxygen cylinder 44.

As a result, the chelate or alkoxide compound fed into the CVD apparatus main body 45 reacts with oxygen to cause S on the SiO ₂ by the thermal decomposition of polysilazane.
A compound layer of iO ₂ , Al ₂ O ₃ or SiO ₂ and Al ₂ O ₃ is formed as a dielectric layer.

When plasma CVD is performed by using the CVD apparatus having the above-described configuration, the same procedure as in thermal CVD is performed, but the heating temperature of the glass substrate 47 by the heater portion 46 is 2.
By setting the temperature to about 50 ° C., reducing the pressure in the reaction vessel to about 10 Torr using the exhaust device 49, and driving the high frequency power source 48 to apply a high frequency electric field of 13.56 MHz, plasma is generated in the CVD device main body 45. While generating, a protective layer made of SiO ₂ , Al ₂ O ₃ layer or MgO is formed.

As described above, the thermal CVD method or the plasma CV method is used.
If the SiO ₂ , Al ₂ O ₃ layer or the MgO protective layer is formed by the D method, the oxide crystal in which the OH group easily forms on the surface of Al ₂ O ₃ , SiO ₂ or MgO is controlled so as to grow slowly. Thus, a dense metal oxide layer or protective layer can be formed.

(Formation of Dielectric Glass Layer by Screen Printing Method) SiO ₂ by thermal decomposition of polysilazane
Method of providing a dielectric glass layer on top.

Next, in this embodiment, the dielectric constant ε is 5
When forming the above-mentioned dielectric glass layer 13, as a material of the dielectric glass layer 13, for example, lead oxide (Pb
O), boron oxide (B ₂ O ₃ ), glass made of silicon oxide (SiO ₂ ) and aluminum oxide (Al ₂ O ₃ ), or bismuth oxide (Bi ₂ O ₃ ), zinc oxide (ZnO),
A glass fired using glass made of boron oxide (B ₂ O ₃ ), silicon oxide (SiO ₂ ), and calcium oxide (CaO) is used.

The dielectric glass layer 13 is formed by screen-printing a dielectric glass paste in which each of the above oxides is mixed with an organic binder and firing at 540 ° C., for example.

The thinner the dielectric glass layer, the more remarkable the effect of improving the panel brightness and reducing the discharge voltage becomes. Therefore, it is desirable to set the thickness of the dielectric glass layer as thin as possible within the range where the withstand voltage does not decrease.

Therefore, in this embodiment, the thickness of the dielectric glass layer 13 is set to a predetermined thickness smaller than the conventional thickness of about 15 μm.

Next, a protective layer 14 made of MgO is formed on the dielectric glass layer 13. In the present embodiment, the CVD
Method (thermal CVD method or plasma CVD method)
A protective layer made of magnesium oxide (MgO) having a (100) plane orientation or a (110) plane orientation is formed. The protective layer 14 is formed by the CVD method in the same manner as the metal oxide. In this embodiment, it is formed to a thickness of 1.0 μm by the plasma CVD method.

Preparation of rear panel 20: First, rear glass
The resist of the substrate 21 is formed by the photoresist method described above.
A concave portion is formed, and a second electrode is formed in the concave portion in the same manner as the discharge electrode 12.
The address electrode 22 as an electrode is formed (lift-off
Method) on top of which, as with the front panel 10,
SiO due to thermal decomposition of zan₂Screen after forming layer 23a
PbO-B according to the printing method and firing.₂O₃-SiO₂
-Al₂O₃System or said Bi₂O₃-ZnO-B₂O ₃-S
iO₂By a CaO-based dielectric glass layer or a CVD method
That's SiO₂, Al₂O₃Form layer 23.

Then, the glass partition walls 24 made by the screen printing method are fixed at a predetermined pitch. Then, one of red (R) phosphor, green (G) phosphor, and blue (B) phosphor is arranged in each space sandwiched by the partition walls 24 to form the phosphor layer 25. To do. Each color R,
As the G and B phosphors, phosphors generally used in PDPs can be used, but here, the following phosphors are used.

Red phosphor: Y ₂ O ₃ : Eu ³⁺ Green phosphor: Zn ₂ SiO ₄ : Mn ²⁺ Blue phosphor: BaMgAl ₁₀ O ₁₇ : Eu ²⁺ PDP by bonding front panel 10 and rear panel 20 Production: Next, the front panel 10 and the rear panel 20 produced as described above are bonded together by using sealing glass, and the discharge space 30 partitioned by the partition wall 24 is provided.
After evacuating the inside to a high vacuum (8 × 10 ⁻⁷ Torr), a discharge gas having a predetermined composition is sealed at a predetermined pressure to manufacture a PDP.

The PDP thus manufactured has a structure in which each electrode (display electrode and address electrode) is closely bonded to the dielectric glass layer, and has very few bubbles.

In the present embodiment, the cell size of the PDP is 0.2 mm or less, and the discharge electrode 12 has a cell pitch of 40 mm so as to be suitable for a 40-inch class high-definition television.
The inter-electrode distance d is set to 0.1 mm or less.

The composition of the discharge gas to be sealed is the Ne--Xe system which has been conventionally used, but the content of Xe is 5 volume% or more, and the sealing pressure is 500 to 760 Torr.
By setting to, the emission brightness of the cell is improved.

As described above, since the PDP of this embodiment can reduce the discharge voltage, the load applied to each component of the panel during operation can be reduced. Moreover, since the dielectric strength is improved, for example, for repeated use over a long period,
Excellent initial performance such as high panel brightness and low discharge voltage can be maintained, and reliability is excellent.

[0059]

EXAMPLES (Examples 1 to 6, 8 to 10, 12 to 14 and Comparative Examples 7, 11, 15, 16)

[0060]

[Table 1]

[0061]

[Table 2]

[0062]

[Table 3]

Sample Nos. Shown in Tables 1 to 3 1-6,8-
The PDPs 10 and 12 to 14 are covered with a SiO ₂ layer formed by thermal decomposition of polysilazane in the air on both the discharge electrode and the address electrode based on the above-mentioned embodiment, and sample Nos. 1 to 6 are provided thereon. SiO ₂ , A by the CVD method
In this structure, a dielectric layer made of l ₂ O ₃ or a compound of SiO ₂ and Al ₂ O ₃ is formed.

Similarly, sample numbers 8 to 10 are PbO-B ₂
It has a structure in which a dielectric glass layer made of O ₃ —SiO ₂ —Al ₂ O ₃ system is formed.
₂ O ₃ a _{-ZnO-B 2 O 3 -SiO 2} -CaO -based structure having a dielectric layer made of, cell size of the PDP, in accordance with the display for a 42-inch high-definition televisions, the partition walls 24 Height is 0.15 mm, partition wall 24
Was set to 0.15 mm, and the inter-electrode distance d of the discharge electrodes 12 was set to 0.05 mm.

Then, the content of Xe is 5% by volume of Ne-
The Xe-based mixed gas was sealed at a sealing pressure of 600 Torr.
Regarding the method of forming the MgO protective layer 14, the protective layer was formed by the plasma CVD method. Further, in the plasma CVD method, Magnesium Acetylacetone [Mg (C ₅ H ₇ O ₂ )
₂ ] was used as the source.

As other conditions, in the plasma CVD method, the temperature of the vaporizer is 125 ° C., the heating temperature of the glass substrate 47 is 250 ° C., Ar gas is 1 L / min, and oxygen is 2 L / min. Flow rate, and the pressure was reduced to 10 Torr, and a high frequency electric field of 13.56 MHz and a high frequency electric field of 300 W was applied for 20 seconds from a high frequency power source 48 to form a MgO protective layer having a film thickness of 1.0 μm (film forming rate 1.0 μm / min).

The MgO protective layer formed in this manner is treated with X
When the crystal planes were examined by line analysis, all the samples were crystals oriented in the (200) plane.

The PDPs of sample numbers 7, 11, 15 and 16 are comparative examples and are the same as sample numbers 1 to 6, 8 to 10 and 12 to 14 except that the electrodes are not coated with SiO ₂ . It is set.

(Experiment) Experiment 1; Sample No. prepared as described above. 1-16
The panel brightness of the PDP was measured. This luminance is a measured value when each prototype PDP is discharged at a discharge sustaining voltage of about 150 V and a frequency of about 30 KHz, which are conditions under which dielectric breakdown is unlikely to occur. The results are shown in Tables 1 to 3 above.

Experiment 2; Next, sample No. 1-16 PD
Twenty sheets of the same type as P were prepared and subjected to an accelerated life test.

This accelerated life test was carried out under much severer conditions than normal use conditions, and the discharge sustaining voltage of 200
V was discharged at a frequency of 50 KHz for 4 hours continuously. Then, the state of destruction of the dielectric glass layer and the like in the panel (defective insulation voltage of the panel) was examined. The results are also shown in Tables 1 to 3.

Discussion; Sample No. The brightness measurement results of 1 to 16 show that the panel brightness of the conventional PDP is 400 cd / m ^2.
Degree (Nikkei Electronics 1997 Vol. 5
-5 (see page 106)), indicating excellent panel brightness.

From this, it is understood that the panel brightness can be improved by forming the dielectric glass layer thin.

From the result of the accelerated life test, the sample No. prepared by coating the electrode with SiO ₂ by thermal decomposition of polysilazane was prepared. In the PDPs 1 to 6, 8 to 10 and 12 to 14, sample No. 1 in which the electrodes were not coated with SiO ₂ by thermal decomposition of polysilazane. 7,11,15,16 PDP
It is clear that the dielectric strength is superior to

From these results, when the electrode is coated with SiO ₂ by the thermal decomposition of polysilazane, the dielectric glass layer and the SiO ₂ and Al ₂ O ₃ layers by the CVD method are formed to a thickness of 15 μm or less, which is thinner than the conventional one, and the brightness is improved. It can be seen that even when the improvement is intended, the withstand voltage can be improved.

Sample No. 7, 11, 16 PDP
In the case of the sample not coated with SiO ₂ , the thickness of the dielectric glass layer on the electrode is the same as the sample No. 1-6, 8-10
It can be seen that dielectric breakdown is likely to occur even though the thickness is thicker than those of Nos. 12 and 14-14.

[0077]

As described above, according to the plasma display panel of the present invention, the first electrode and the first electrode
In a plasma display panel in which a front cover plate having a dielectric layer covering the electrode of and a back plate having a second electrode and a phosphor layer are opposed to each other, a polysilazane layer is formed on the first electrode. Providing SiO ₂ produced by pyrolysis and dielectric glass layer on this metal oxide or SiO by CVD method
By providing ₂ , ₂ , Al ₂ O ₃ and a compound layer of SiO ₂ and Al ₂ O ₃ , it is possible to obtain a plasma display panel having high brightness at a low discharge voltage and high reliability in addressing and durability.

When the back plate has a second dielectric glass layer covering the second electrode, a SiO ₂ film formed by thermal decomposition of polysilazane is formed on the second electrode. The reliability can be further improved by disposing the dielectric glass layer after the provision.

Further, the first dielectric glass layer and the second dielectric glass layer
If at least one of the dielectric glass layers having a dielectric constant of 4 or more is used, the effect of reducing the discharge voltage and the effect of improving the panel brightness become remarkable.

The dielectric glass layer having a dielectric constant of 5 or more is made of lead oxide (PbO), boron oxide (B ₂ O ₃ ), silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ). , Bismuth oxide (Bi ₂ O ₃ ), zinc oxide (Zn
O), boron oxide (B ₂ O ₃ ), silicon oxide (SiO ₂ ), and calcium oxide (CaO) can also be used. Further, by using the CVD method, by using SiO ₂ , Al ₂ O ₃ and a compound layer of SiO ₂ and Al ₂ O ₃ ,
The characteristics are also improved by easily setting the dielectric constant to 4 or more.

[Brief description of drawings]

FIG. 1 is a perspective view of a main part of a plasma display panel according to an embodiment of the present invention.

FIG. 2 is a sectional view of the plasma display panel taken along the line XX.

FIG. 3 is a sectional view of the plasma display panel taken along the line YY.

FIG. 4 is a schematic diagram showing a method of forming electrodes on the front glass substrate.

FIG. 5 is a schematic view of a CVD apparatus used when manufacturing the plasma display panel in the present embodiment.

FIG. 6 is a perspective view of a main part of a conventional AC type plasma display panel.

FIG. 7 is a schematic view of a coating device used for polysilazane coating in the present embodiment.

[Explanation of symbols]

10 Front Panel 11 Front Glass Substrate 12 Discharge Electrode (Display Electrode) 13 Dielectric Glass Layer 13a SiO ₂ Layer 14 Due to Thermal Decomposition of Polysilazane 14 Protective Film 20 Back Panel 21 Back Glass Substrate 22 Address Electrode 23 Dielectric Glass Layer 23a By CVD Method SiO ₂ , Al ₂ O ₃ and SiO ₂
And Al ₂ O ₃ compound layer 24 Partition wall 25 Phosphor layer 30 Discharge space 40 CVD apparatus 41a, 41b Argon gas cylinder 42, 43 Vaporizer 44 Oxygen gas cylinder 45 CVD apparatus main body 46 Substrate heater 47 A dielectric glass layer was formed Front glass substrate 48 High frequency power source 49 Exhaust device 71 Polysilazane (SiH ₂ -NH) _n solution

Continuation of the front page (56) References JP-A-9-50767 (JP, A) JP-A-9-107171 (JP, A) JP-A-62-88327 (JP, A) (58) Fields investigated (Int .Cl. ⁷ , DB name) H01J 11/00-17/64 H01J 9/02

Claims (5)

(57) [Claims] 1. A front cover plate having a first electrode and a dielectric layer covering the first electrode , a second electrode , a dielectric layer covering the second electrode , and a phosphor layer. a plasma display panel and the back plate are opposed to the said first upper electrode or by pyrolysis of the polysilazane in the coating after the atmosphere over the second electrode, silicon oxide (SiO
After forming the ₂₎ film, SiO _2, aluminum oxide (Al ₂ O ₃ by CVD) or plasma display panel, characterized in that a compound of the S iO ₂ and _for Al ₂ O ₃ dielectric layer. 2. A front cover plate having a first electrode and a dielectric layer covering the first electrode , a second electrode , a dielectric layer covering the second electrode , and a phosphor layer. a plasma display panel and the back plate are opposed to the said first upper electrode or by thermal decomposition in the coating after the atmosphere polysilazane on the second electrode, after forming the SiO ₂ film, a dielectric A plasma display panel comprising a glass layer as a dielectric layer. 3. The thickness of the SiO ₂ film formed by thermal decomposition of polysilazane in the atmosphere is 0.1 μm to 3.0 μm, and the thickness of the dielectric glass layer is 5 μm to 14 μm. Plasma display panel. 4. The molecular formula of polysilazane is (SiH ₂ --N
The plasma display panel according to any one of claims 1 to 3, wherein H) _n has an average molecular weight of 600 to 10,000. 5. Before Ki誘 collector glass layer, lead oxide, boric
Containing oxide硅arsenide, oxide aluminum or al made glass, also
Oxidation bismuth scan is oxidized zinc oxide, boric-containing oxide, silicofluoride-containing, claim 2 or 3 plasma display panel according to characterized in that the oxidation <br/> calcium or we made glass.