WO2002029853A2 - Procede servant a decouper une structure composite comprenant un ou plusieurs composants electroniques au moyen d"un laser - Google Patents

Procede servant a decouper une structure composite comprenant un ou plusieurs composants electroniques au moyen d"un laser Download PDF

Info

Publication number
WO2002029853A2
WO2002029853A2 PCT/NL2001/000736 NL0100736W WO0229853A2 WO 2002029853 A2 WO2002029853 A2 WO 2002029853A2 NL 0100736 W NL0100736 W NL 0100736W WO 0229853 A2 WO0229853 A2 WO 0229853A2
Authority
WO
WIPO (PCT)
Prior art keywords
composite structure
cutting
laser
electronic component
physical quantity
Prior art date
Application number
PCT/NL2001/000736
Other languages
English (en)
Other versions
WO2002029853A3 (fr
Inventor
Antonie Van Weelden
Sybren Yme Leijenaar
Original Assignee
Boschman Technologies B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL1016334A external-priority patent/NL1016334C2/nl
Application filed by Boschman Technologies B.V. filed Critical Boschman Technologies B.V.
Priority to AU2002211091A priority Critical patent/AU2002211091A1/en
Publication of WO2002029853A2 publication Critical patent/WO2002029853A2/fr
Publication of WO2002029853A3 publication Critical patent/WO2002029853A3/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/034Observing the temperature of the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/42Printed circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • B23K2103/12Copper or alloys thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/18Dissimilar materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/30Organic material
    • B23K2103/42Plastics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52Ceramics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68331Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • the present invention relates to a method for cutting a composite structure comprising one or more electronic components, in particular integrated circuits, using a laser.
  • the cutting of materials using a laser is commonly known.
  • the laser removes material.
  • incisions are formed, and also parts of an object can be cut loose.
  • Many different materials can thus be cut.
  • US-A-6 057 180 it is known to cut laser electrical connections on a wafer with one or more ICs with the use of a laser.
  • a narrow laser bundle is aimed at the electrical connection, whereby material of the electrical in connection is removed and the electrical connection is severed.
  • the surrounding material absorbs the excessive laser energy so that the substrate of the wafer is not damaged.
  • composite structure means a structure that comprises at least two parts made of different materials.
  • the composite structure relates to a lead frame with ICs that are encapsulated with plastic. If desired, the ICs are attached to a substrate.
  • this composite structure comprises a layer of plastic, at least one layer of chip material, such as e.g. silicon, and possibly one or more alternate layers of metal and/or other materials.
  • a composite structure may be a laminate as well as a composite of different materials .
  • the present invention aims at providing a solution for the above mentioned problems and thereto is characterized in that during the cutting of the material of the composite structure, a physical quantity relating to the cutting is measured, and that of that the power of the laser is adjusted depending on said physical quantity.
  • the power of the laser can be adjusted from one first non-zero value to another non-zero value, in dependence of the material cut at that moment. In this way it is prevented that the laser "shoots through” at a material transition, thereby cutting big holes in the underlying material, or that, by smearing of metal, unwanted electrical contacts are made.
  • Adjusting the power of the laser can take place smoothly when the value of the physical quantity is changing smoothly.
  • the value of the physical quantity will often change steplike, i.e. every time the laser passes a material transition.
  • the power of the laser will also be adjusted steplike.
  • the method according to the invention is also suitable for the partial cutting of a composite structure with one or more electronic components. For instance electrical connections can thus be cut in a reproducible way without cutting the complete structure.
  • the physical quantity to be determined is not specifically limited.
  • the temperature of the material near the cutting location can be measured so that, taking into account the thermal conduction and the power of the laser, the specific heat of the cut material may be determined, which is an indication for the kind of the cut material and therefore a change of cut material could thereby observed.
  • the reflection of the laser light off the cut material could be determined, from which the reflection coefficient may be determined which is also an indication for the kind of the cut material.
  • an additional radiation source may be pointed at the cutting location, and an absorptive strength of the reflected radiation may be determined, whereby a change of the evaporated material may be observed.
  • the physical quantity comprises radiation emanating from the composite structure.
  • This radiation originates from atoms and/or molecules excited by the laser light.
  • the temperature can be derived from the total quantity of emitted radiation, which is - as described above - again an indication for the kind of material that is being cut at that moment.
  • the spectrum of the radiation emanating from the composite structure is measured.
  • the spectrum of the emitted radiation is specific for the kind of material that is being cut.
  • the spectrum may be compared to set values or standard spectra and the like in order to observe changes thereof and therefore changes of materials to be cut.
  • the radiation is mostly emitted by material evaporated by the laser radiation.
  • Spectroscopic characterization of this evaporated material is a direct identification of the cut material, whereby many different substances may be recognized, because every substance shows a characteristic spectrum.
  • spectroscopy is a very fast measuring method.
  • the laser radiation may be supplied to the composite material in a continuous way. This means that a continuous laser may be used.
  • the power density thus to be gained however is in general too small for a controlled cutting process. In this way it is possible is that the energy is spread too much to the adjacent material. Reducing the power of the laser can decrease this possibility, but this has the disadvantage that the complete cutting process takes place too slowly.
  • the laser is a pulsed laser. This offers the possibility to easily control the supplied laser energy at a high power, and therefore also the effect thereof on the composite material to be cut. After each pulse, its effect may be determined without the laser cutting any further in the meantime.
  • the type of laser used is not specifically limited.
  • the laser radiation should be absorbed well by the materials to be cut, or at least by one of the materials to be cut.
  • the laser should be such that the power can be adjusted, preferably in as large a range as possible.
  • Pulsed lasers offer advantages here because the power of the laser can be changed by changing the energy per pulse as well as by changing the time between two pulses.
  • the wavelength of the laser used is smaller than 400 nm.
  • the smallest useful focus diameter of a laser beam is equal to twice the used wavelength.
  • a laser with a short wavelength gives the most possibilities.
  • the invention further provides a device for the cutting of a composite structure comprising one or more electronic components, in particular integrated circuits, the device at least comprising: ⁇ A laser,
  • Transport means to move the composite structure and the laser with respect to one another, the device being characterized in that it further comprises measuring means for measuring a physical quantity relating to the cutting during the cutting of the material of the composite structure.
  • such a composite structure may be cut.
  • the composite structure is supported by means of the support means, and the composite structure and the laser are moved with respect to one another in such a way that the laser can introduce the desired cutting lines.
  • the support means are a support mold, whether or not provided with vacuum suction means, or a carrier film, for instance an adhesive carrier film.
  • a carrier film may be clamped for instance between two rolls or clamps.
  • the measuring means measure a physical quantity that relates to the cutting. On the basis of the measured value of that quantity the power of the laser may be adjusted.
  • the measuring means comprise means for measuring a part of the spectrum of radiation emanating from the composite structure.
  • light-sensitive elements for instance photodiodes, or light conducting elements, for instance optical fibers are mounted.
  • These light-sensitive or light conducting elements are for instance connected to a spectroscope for measuring of the part of the spectrum.
  • the complete visible spectrum may be measured, but also, for example, only one or a few radiation peaks that are characteristic for the material to be processed.
  • the power of the laser can be adjusted manually in dependence of the value of the physical quantity it is preferred when the control means for controlling the power of the laser are coupled to the measuring means.
  • the cutting operation may simply be automated and a fast and reliable control of the power of the laser is possible.
  • a control assembly may be present, which is designed to control the means concerned.
  • Such a control assembly may comprise a data processing unit, like a computer and the like, to control matters in a suitable way.
  • the invention provides a composite structure, comprising one or more electronic components in particular integrated circuits, obtainable by a method according to the invention.
  • a working method according the invention it here concerns cut covered electronic components like ICs. These show very intact cutting faces without smearing of metal.
  • the invention provides a method for testing electronic components accommodated in a composite structure, the method comprising the following steps:
  • Providing a composite structure comprising a lead frame onto which at least one electronic component has been mounted, and at least two contact pads, wich are each connected to an electronic component and to at least one other contact pad, wherein the lead frame, the at least one electronic component and the contact pads are at least partially covered with encapsulating plastic; ⁇ Cutting of the electrical connections between each of the contact pads belonging to at least one electronic component, and the other contact pads; and
  • This method has an important advantage that during the testing the mechanical strength of the encapsulating plastic may be used. Herein it is not necessary to sever the electrical connections between the contact pads prior to the circuit testing.
  • cutting means the removal of material in any way, such that an electrical connection is severed. This may relate to cutting in a narrow sense, but also sawing, grinding, etc.
  • contact pads in a lead frame basically are all connected to each other. In fact they are projections on the metal lead frame. Often they are present in groups of two. In any way the severing of the electrical connections between each of the contact pads belonging to an electrical component and other contact pads amounts to the severing of the electrical connection between the contact pads and the lead frame. Thus the contact pads are automatically insulated from the other contact pads.
  • this method further comprises the following steps:
  • the plastic of the one or more approved electronic components may be marked with a code different from that of rejected electronic components.
  • this can take place with a color marking, an incision, but also by storing the coordinates of those components. In that way a correct selection later on is much simplified.
  • the method further comprises the following steps:
  • the support means are selected from a carrier film, a supporting mold, a support mold with vacuum suction means, or a combination thereof.
  • this offers the possibility to apply the result of the test to the carrier film, for example by applying a color marking on the carrier film near an approved component.
  • the one or more mechanically and electrically insulated components may still be processed and moved as a whole, by taking out the carrier film and/or the support mold, with the electronic components attached thereon.
  • the carrier film may comprise any suitable adhesive foil.
  • foil In this connection the concept of foil must be interpreted broadly, and includes also a thin layer of a material with certain rigidity, which material is provided with an adhesive.
  • the support mold can be a plate with substantially the shape and dimensions of the composite structure, or somewhat larger.
  • the mold may be provided with holes or channels. Via these holes or channels an air exhaust can be connected, that can suck the composite structure, if desired provided with a carrier film, to the supporting mold.
  • the step of cutting of the electrical connections and the step of the mechanical disconnection take place in one processing step.
  • This has the advantage that only one separating operation is necessary, whereby the risk of movement of components between a plurality of cutting and separating operations is excluded, and also that a better quality of the separating surface is possible.
  • the step of cutting the electrical connections is brought about using a laser.
  • a laser may be applied in many different ways. It is e.g. possible to do tests prior to the production in order to determine the correct power of the laser. Due to this, no further peripherals are needed for controlling the laser in the production process.
  • the laser work as it were phased. That is possible for instance, with a pulsed laser, or by having the laser go over the area to be cut several times, radiating continuously. Preferably however, during the cutting a physical quantity relating to the cutting is measured, and in dependence of that quantity the power of the laser is adjusted. This gives the advantage that no separate tests are necessary, and that, with possibly moved contact pads, there may still be cut correctly. This ensures a more flexible cutting process. All this has already been explained in detail above.
  • the physical quantity comprises radiation emanating from the composite structure and/or the carrier film.
  • the spectrum of the radiation is measured.
  • the radiation of the composite structure comprises at least radiation from the contact pads and also radiation from either the encapsulating plastic or the substrate, or combinations thereof, although not necessarily at the same time.
  • FIG. 1 shows in cross section, a schematic cutting operation on a composite structure by means of a device according to the invention
  • ⁇ Figure 2 shows in cross section, another embodiment of a cutting operation according to the invention.
  • a composite structure is indicated with 1.
  • This comprises a substrate 2, here a plastic material, onto which a number of ICs 3 are mounted on elevations 2.
  • the electrical connections of the ICs 3 are connected to contact pads 4 by means of metal wires 5.
  • the ICs 3 are encapsulated with an encapsulating plastic 6.
  • the elevations 2 and/or contact pads 4 may, at the bottom side, be provided with recesses 7 that are also filled with encapsulating plastic 6 and serve as anchorage for the encapsulating material.
  • chain lines 8 indicate cutting lines along which the various encapsulated ICs 3 are to be separated from each other.
  • the composite structure 1 in Figure 1 is cut by means of the laser beam 10.
  • the intended cutting plane comprises a plane through cutting line 8.
  • the laser beam 10 as seen from above, first has to cut through a layer of encapsulating material 6, for instance a thermo-setting resin, then through the material of the contact pads 4, for instance copper, and then through a layer of substrate 2, for instance the plastic material.
  • This may also be e.g. ceramic material.
  • the power of the laser required for these materials can be very different. Therefore, the power of the laser 9 is to be adjusted as soon as a material transition is detected by means of the measurement means 14 and 15.
  • the contact pads 4 do not form a solid plane.
  • the contact pads 4 alternate with parts at which only encapsulating material 6 is present on the substrate 2.
  • the contact pads 4 are often very thin, for instance some micrometers . In that case they are not provided with recesses 7 at the bottom. It is also possible that a part of the substrate has been processed in such a way, for instance by etching, that encapsulating material encapsulates it on both sides . In these cases the cutting operation will proceed in a different way than during the cutting of the first mentioned parts of the composite structure 1, because first encapsulating material, then material of the contact pads and/or the substrate, and then again encapsulating material is cut. This mainly relates to those parts of the contact pads where there are recesses . Of course a part of the contact pads must remain free from covering material to make electrical connections possible later on.
  • a type of laser possibly suited in this connection is a so-called excimer laser.
  • the laser is not limited to the excimer laser.
  • Figure 2 shows a different embodiment of a cutting operation according to the invention. Similar parts are indicated with spectra like reference numerals.
  • the ICs 3 are encapsulated with an encapsulated plastic 6.
  • the substrate 2 is a lead frame.
  • the lead frame can be any lead frame known in the state of the art. Here for instance it is a copper lead frame.
  • 16 indicates a carrier film, that is attached to the composite structure 1.
  • the lead frame side of the composite structure is directed towards the laser.
  • the composite structure 1 is cut with the help of the laser beam 10.
  • the intended cutting plane comprises a plane through cutting line 8.
  • the laser beam 10 as seen from the top, first has to cut through the material of the contact pads 4, in this case copper, and then through a layer of encapsulating material 6, for instance a thermo-setting resin.
  • the carrier film 16 This, however, is not necessary, and the mechanical and electrical encapsulated ICs 3, disconnected mechanically and electically, can also be removed from the carrier film in another way. This may for instance take place by peeling off the carrier film 16, or severing the connection between carrier film 16 and composite structure 1 in another way.
  • the performed cutting operation can be of many kinds.
  • the complete composite structure 1 can be divided by cutting into separate encapsulated electronic components . Thereto the laser beam 10 must cut through the complete composite structure 1. Usually this is the last step in the production process.
  • the electronic components may then be tested. Dependant on the result of the test, the electronic components 3 are marked. Next the electronic components 3 that do not satisfy the test may be separated from the electronic components 3 that do meet the test.
  • this separation can be brought about by storing the coordinates of the approved electronic components 3, and cutting out the substrate 2 and/or the encapsulating material 6is cut in such a way, for instance by laser, that the corresponding electronic component3is removed from the composite structure 1.
  • the substrate 2 As described, it is also possible to attach a separate carrier film to the substrate 2, or, for instance, onto the covering material 6, and to disconnect the various electronic components 3 from each other in one cutting operation.
  • the incisions with the laser beam 10 are so deep that all layers of the composite structure 1 are cut, the mechanical connections of the carrier film 16 however remaining in tact.
  • the carrier film now takes over the function of the substrate, for instance lead frame, as described above.
  • the quality of the cuts can be further improved in this way because they are made in one motion. The risk of intermediate displacement, and thereby possibly damaged electronic components 3, is reduced.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Procédé et dispositif servant à découper une structure composite p (1) comprenant un ou plusieurs composants électroniques (3), en particulier des circuits intégrés. Ce procédé met en application un laser (9) et consiste à mesurer une quantité physique relative au découpage, pendant le découpage du matériau de la structure composite (1), et à régler la puissance du laser (9) en fonction de cette quantité. L"invention concerne, de plus, un procédé servant à tester des circuits intégrés logeant dans une structure composite.
PCT/NL2001/000736 2000-10-05 2001-10-05 Procede servant a decouper une structure composite comprenant un ou plusieurs composants electroniques au moyen d"un laser WO2002029853A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002211091A AU2002211091A1 (en) 2000-10-05 2001-10-05 Method for cutting a composite structure comprising one or more electronic compnents using a laser

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL1016334 2000-10-05
NL1016334A NL1016334C2 (nl) 2000-10-05 2000-10-05 Werkwijze voor het onder toepassing van een laser snijden van een composietstructuur met een of meer elektronische componenten.
NL1018403 2001-06-27
NL1018403A NL1018403C1 (nl) 2000-10-05 2001-06-27 Werkwijze voor het onder toepassing van een laser snijden van een composietstructuur met een of meer elektronische componenten.

Publications (2)

Publication Number Publication Date
WO2002029853A2 true WO2002029853A2 (fr) 2002-04-11
WO2002029853A3 WO2002029853A3 (fr) 2002-08-08

Family

ID=26643247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2001/000736 WO2002029853A2 (fr) 2000-10-05 2001-10-05 Procede servant a decouper une structure composite comprenant un ou plusieurs composants electroniques au moyen d"un laser

Country Status (3)

Country Link
AU (1) AU2002211091A1 (fr)
NL (1) NL1018403C1 (fr)
WO (1) WO2002029853A2 (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1834696A1 (fr) * 2006-03-14 2007-09-19 F. Hoffman-la Roche AG Procédé pour la fabrication d'un élément d'analyse multicouche
US20090188901A1 (en) * 2006-04-10 2009-07-30 Board Of Trustees Of Michigan State University Laser Material Processing System
US7901971B2 (en) 2008-08-11 2011-03-08 Sensirion Ag Method for manufacturing a sensor device with a stress relief layer
US20110100967A1 (en) * 2009-11-03 2011-05-05 Applied Spectra, Inc. Method for real-time optical diagnostics in laser ablation and laser processing of layered and structured materials
US20120000893A1 (en) * 2010-06-30 2012-01-05 Resonetics, LLC Precision Laser Ablation
US20120103945A1 (en) * 2008-07-09 2012-05-03 Fei Company Method And Apparatus For Laser Machining
US20120156875A1 (en) * 2010-09-16 2012-06-21 Srinivas Ramanujapuram A Laser based processing of layered materials
US20130213946A1 (en) * 2012-02-20 2013-08-22 Disco Corporation Laser processing method and laser processing apparatus
US20140034614A1 (en) * 2011-04-21 2014-02-06 Adige S.P.A. Methods for controlling laser cutting processes and laser cutting systems implementing same
GB2553515A (en) * 2016-09-01 2018-03-14 Rolls Royce Plc Method
US10239160B2 (en) 2011-09-21 2019-03-26 Coherent, Inc. Systems and processes that singulate materials
US20190299329A1 (en) * 2009-03-27 2019-10-03 Electro Scientific Industries, Inc. Laser micromachining with tailored bursts of short laser pulses
US11980967B2 (en) * 2019-05-01 2024-05-14 Electro Scientific Industries, Inc. Laser micromachining with tailored bursts of short laser pulses

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4530152A (en) * 1982-04-01 1985-07-23 Compagnie Industrielle Des Telecommunications Cit-Alcatel Method for encapsulating semiconductor components using temporary substrates
GB2169496A (en) * 1985-01-16 1986-07-16 Stc Plc Cleaning metal surfaces
DE4138157A1 (de) * 1991-11-21 1993-05-27 Krupp Ag Verfahren zum bestimmen der dicke einer beschichtung
FR2703618A1 (fr) * 1993-04-08 1994-10-14 France Etat Armement Dispositif de décapage au laser.
DE19518868A1 (de) * 1995-05-23 1996-11-28 Manfred Dr Rer Nat Di Ostertag Verfahren und Vorrichtung zur Photoablation anorganischer, nicht metallischer Korrosionskrusten und Ablagerungen
US5593606A (en) * 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134956A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 半導体装置の組立方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4530152A (en) * 1982-04-01 1985-07-23 Compagnie Industrielle Des Telecommunications Cit-Alcatel Method for encapsulating semiconductor components using temporary substrates
GB2169496A (en) * 1985-01-16 1986-07-16 Stc Plc Cleaning metal surfaces
DE4138157A1 (de) * 1991-11-21 1993-05-27 Krupp Ag Verfahren zum bestimmen der dicke einer beschichtung
FR2703618A1 (fr) * 1993-04-08 1994-10-14 France Etat Armement Dispositif de décapage au laser.
US5593606A (en) * 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
DE19518868A1 (de) * 1995-05-23 1996-11-28 Manfred Dr Rer Nat Di Ostertag Verfahren und Vorrichtung zur Photoablation anorganischer, nicht metallischer Korrosionskrusten und Ablagerungen

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HONG M -H ET AL: "OPTICAL EMISSION SPECTRUM ANALYSES DURING PULSED LASER DEFLASH ON INTEGRATED CIRCUIT PACKAGES" , JAPANESE JOURNAL OF APPLIED PHYSICS,PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO,JP, VOL. 38, NR. 12A, PAGE(S) 6750-6753 , 12-1999 XP000955287 ISSN: 0021-4922 the whole document *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 386 (E-812), 25 August 1989 (1989-08-25) -& JP 01 134956 A (HITACHI LTD), 26 May 1989 (1989-05-26) *

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007248461A (ja) * 2006-03-14 2007-09-27 F Hoffmann-La Roche Ag 多層分析エレメントの製造法
US7857924B2 (en) 2006-03-14 2010-12-28 Roche Diagnostics Operations, Inc. Method for production of a multi-layer analysis element
EP1834696A1 (fr) * 2006-03-14 2007-09-19 F. Hoffman-la Roche AG Procédé pour la fabrication d'un élément d'analyse multicouche
US20090188901A1 (en) * 2006-04-10 2009-07-30 Board Of Trustees Of Michigan State University Laser Material Processing System
US9018562B2 (en) * 2006-04-10 2015-04-28 Board Of Trustees Of Michigan State University Laser material processing system
US10493559B2 (en) * 2008-07-09 2019-12-03 Fei Company Method and apparatus for laser machining
US20120103945A1 (en) * 2008-07-09 2012-05-03 Fei Company Method And Apparatus For Laser Machining
US7901971B2 (en) 2008-08-11 2011-03-08 Sensirion Ag Method for manufacturing a sensor device with a stress relief layer
US20190299329A1 (en) * 2009-03-27 2019-10-03 Electro Scientific Industries, Inc. Laser micromachining with tailored bursts of short laser pulses
US20110100967A1 (en) * 2009-11-03 2011-05-05 Applied Spectra, Inc. Method for real-time optical diagnostics in laser ablation and laser processing of layered and structured materials
US9061369B2 (en) * 2009-11-03 2015-06-23 Applied Spectra, Inc. Method for real-time optical diagnostics in laser ablation and laser processing of layered and structured materials
US20120000893A1 (en) * 2010-06-30 2012-01-05 Resonetics, LLC Precision Laser Ablation
US8772671B2 (en) * 2010-06-30 2014-07-08 Resonetics, LLC Precision laser ablation
US9114482B2 (en) * 2010-09-16 2015-08-25 Raydiance, Inc. Laser based processing of layered materials
US9120181B2 (en) 2010-09-16 2015-09-01 Coherent, Inc. Singulation of layered materials using selectively variable laser output
US20120156875A1 (en) * 2010-09-16 2012-06-21 Srinivas Ramanujapuram A Laser based processing of layered materials
US8981258B2 (en) * 2011-04-21 2015-03-17 Adige S.P.A. Methods for controlling laser cutting processes and laser cutting systems implementing same
US20140034614A1 (en) * 2011-04-21 2014-02-06 Adige S.P.A. Methods for controlling laser cutting processes and laser cutting systems implementing same
US10239160B2 (en) 2011-09-21 2019-03-26 Coherent, Inc. Systems and processes that singulate materials
US9233433B2 (en) * 2012-02-20 2016-01-12 Disco Corporation Laser processing method and laser processing apparatus
US20130213946A1 (en) * 2012-02-20 2013-08-22 Disco Corporation Laser processing method and laser processing apparatus
GB2553515A (en) * 2016-09-01 2018-03-14 Rolls Royce Plc Method
US11980967B2 (en) * 2019-05-01 2024-05-14 Electro Scientific Industries, Inc. Laser micromachining with tailored bursts of short laser pulses

Also Published As

Publication number Publication date
AU2002211091A1 (en) 2002-04-15
NL1018403C1 (nl) 2002-04-08
WO2002029853A3 (fr) 2002-08-08

Similar Documents

Publication Publication Date Title
US7737001B2 (en) Semiconductor manufacturing method
KR950001305B1 (ko) 레이저에 의한 배선패턴 절단방법 및 장치
US7135384B2 (en) Semiconductor wafer dividing method and apparatus
JP5608521B2 (ja) 半導体ウエハの分割方法と半導体チップ及び半導体装置
US20030006221A1 (en) Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
US20040020901A1 (en) Circuit singulation system and method
JP6478913B2 (ja) デバイスウエハからのキャリアウエハのレーザ剥離
US7271012B2 (en) Failure analysis methods and systems
US6917011B2 (en) Method and apparatus for decapping integrated circuit packages
US20090223942A1 (en) Lead Frame Isolation Using Laser Technology
WO2002029853A2 (fr) Procede servant a decouper une structure composite comprenant un ou plusieurs composants electroniques au moyen d"un laser
US9209085B2 (en) Wafer processing method
US6974726B2 (en) Silicon wafer with soluble protective coating
JP2008066751A (ja) 半導体ウェハを個々分割するための装置および方法
JP3795040B2 (ja) 半導体装置の製造方法
JP2003060120A (ja) 半導体装置及びその製造方法
JP2000114129A (ja) 半導体装置及びその製造方法
US10985065B2 (en) Method of dicing a wafer by pre-sawing and subsequent laser cutting
US20090011522A1 (en) Semiconductor Device Package Disassembly
KR20180048376A (ko) 웨이퍼의 가공 방법
EP1069618A4 (fr) Dispositif semi-conducteur et sa fabrication
US9455149B2 (en) Plate-like object processing method
CN111952204A (zh) 半导体装置的制造方法
US20060289966A1 (en) Silicon wafer with non-soluble protective coating
NL1016334C2 (nl) Werkwijze voor het onder toepassing van een laser snijden van een composietstructuur met een of meer elektronische componenten.

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP