WO2002010816A2 - Systeme d'interconnexion optique dans un circuit microelectronique realise sur un substrat soi - Google Patents
Systeme d'interconnexion optique dans un circuit microelectronique realise sur un substrat soi Download PDFInfo
- Publication number
- WO2002010816A2 WO2002010816A2 PCT/FR2001/002456 FR0102456W WO0210816A2 WO 2002010816 A2 WO2002010816 A2 WO 2002010816A2 FR 0102456 W FR0102456 W FR 0102456W WO 0210816 A2 WO0210816 A2 WO 0210816A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical
- silicon film
- interconnection system
- silicon
- microelectronic circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12173—Masking
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
Definitions
- the invention relates to an optical interconnection system in a microelectronic circuit (or integrated circuit) produced on an SOI substrate. It relates in particular to an interconnection system allowing the optical distribution of a clock signal between different blocks of a microelectronic circuit.
- microelectronics industry has started the transition to SOI (Silicon-On-Insulator) technologies allowing a technological leap resulting in a speed gain of at least 20%.
- SOI Silicon-On-Insulator
- Patent TJS-A-6,063,299 discloses a manufacturing process, on a silicon-on-insulator type substrate (SOI substrate), of waveguides in edge, single-mode and with wide section (width of the edge and typical silicon film thickness of 3 to 5 ⁇ m). These guides are the basis of integrated optical circuits associated with optical fibers.
- SOI substrate silicon-on-insulator type substrate
- the invention applies in particular to the distribution of clock signals. It will resolve one of the foreseeable blocking points of the "roadmap" for the years 2005 to 2010 which is that of the distribution of clock signals in circuits comprising several hundreds of millions of transistors with clock frequencies of up to ten gigahertz.
- the subject of the invention is therefore an optical interconnection system in a microelectronic circuit produced on an SOI substrate, that is to say a substrate having a silicon film supported by a layer of electrically insulating material, the microelectronic circuit comprising at least one functional block to be connected made in the silicon film, the optical interconnection system comprising at least one optical microguide constituted by a ribbon delimited in the silicon film, by lateral confinement zones for connecting the functional block .
- the lateral confinement zones can be zones of the silicon film etched and filled with a confinement material, for example a silicon oxide or a silicon nitride. They can be oxidized zones of the silicon film.
- the microelectronic circuit comprising several functional blocks, the interconnection system is arranged between the functional blocks, under the routing channels of this microelectronic circuit. This interconnection system can in particular be a clock signal distribution system.
- the subject of the invention is also a method of producing a microelectronic circuit on an SOI substrate, that is to say a substrate having a silicon film supported by a layer of electrically insulating material, the microelectronic circuit having to comprise at at least one functional block produced in the silicon film and connected by an interconnection system, the method being characterized in that it comprises: - stages of production of the functional block,
- FIGS. 1A to 1C illustrate a first alternative embodiment of an optical microguide for an optical interconnection system according to the present invention
- FIGS. 2A to 2C illustrate a second alternative embodiment of an optical microguide for an optical interconnection system according to the present invention
- FIG. 3 is a cross-sectional representation of part of an integrated circuit showing the location of optical microguides, according to the present invention.
- An SOI substrate generally consists of a silicon substrate successively supporting an oxide layer and a silicon film in which electronic devices are produced.
- This silicon film naturally constitutes an optical waveguide at the near infrared wavelengths used in optical telecommunications (1.3 ⁇ m).
- a tree of microguides, of width less than a ⁇ m, can be produced there, admitting small radii of curvature.
- These microguides can be produced using as much as possible the technological stages of manufacturing integrated circuits. They can be placed in the space available under the routing channels, between the functional blocks which constitute a VLSI circuit (on the same chip).
- Light can be injected at the edge of the chip, either from an optical fiber using the dielectric layers used to isolate the metal connections and to transfer the light to the root of the microguide tree by a coupler.
- diffraction grating either by direct coupling of a laser diode to the microguide.
- the modulation of the optical signal is obtained either directly by modulation of the current of the laser diode, or by integration of a SiGe / Si quantum well modulator.
- the detection of the optical signal is obtained by an integrated photodetector either of the metal-semiconductor-metal (MSM) type, or based on SiGeC.
- MSM metal-semiconductor-metal
- the silicon film of an SOI substrate naturally forms an optical waveguide at wavelengths in optical telecommunications.
- These guides optical on SOI substrate and the performance of the end components (modulators and detectors) in development on silicon make it possible to envisage the realization of optical transmissions at frequencies of several GHz inside an integrated circuit chip.
- the inventors of the present invention have verified that the silicon film of an SOI substrate of the SIMOX (Separation by IMplanted OXygen) type can form a very good optical guide at the wavelength of
- the propagation losses measured in the planar guides for such substrates are of the order of 5 dB / cm, which corresponds to light leaks towards the massive part of the substrate due to the small thickness of the buried silica layer.
- SOI substrates offer much greater latitude in the choice of the thicknesses of the buried silica layer and of the silicon film. Such substrates therefore make it possible to envisage the production of optical guides having extremely propagation losses. reduced. These thicknesses can then be chosen so that the losses by light leakage towards the massive part of the substrate, through the buried silica layer, are negligible. These thicknesses can also be chosen so that the optical guide can be quasi-single-mode whatever the polarization of the light (TE or TM) and so that the coupling of the light in the guide is optimum.
- TE or TM polarization of the light
- the high difference in refractive index between silicon and silica leads to strong confinement of the electromagnetic field in the waveguide.
- the electromagnetic field can be confined laterally by delimiting a ribbon (which forms a two-dimensional guide) either by etching the silicon film and depositing silica or nitride in the etched areas, or by oxidation. It is thus possible to produce microguides of small width (of the order of 1 ⁇ m), spaced apart by a few ⁇ m only and capable of accepting radii of curvature of the order of 5 ⁇ m without prohibitive losses. Several of these microguides can then be placed in the space available between the functional blocks of an integrated circuit, under the routing channels.
- FIG. 1A shows an SOI substrate 10 of a standard type for microelectronics.
- the substrate 10 consists of a solid part or support 11 of silicon successively supporting a layer 12 of silicon oxide and a film 13 of silicon.
- the initial thickness of the silicon film 13 is generally of the order of 0.2 ⁇ m.
- the film 13 will be thinned to around 0.1 ⁇ m to produce transistors there.
- the parts of the film reserved for the optics must nevertheless keep a thickness 0.2 ⁇ m minimum to limit light leakage to the support 11.
- a first alternative embodiment of a microguide, compatible with microelectronic processes, is to deposit a layer of silicon nitride 15 on the film 13 of the substrate 10 which has been thermally oxidized beforehand to preserve the quality of the interface.
- the film 13 therefore successively supports a layer 14 of thermal oxide approximately 30 nm thick and the layer 15 of silicon nitride.
- All the optical components to be produced are then delimited by photolithography and etching of the entire thickness of the nitride layer 15.
- FIG. 1B shows this lateral delimitation for a waveguide.
- the etching of the layer 15 provides a part 16 delimiting the width of the waveguide to be obtained and parts 17 and 18 located on either side of the part 16 and delimiting the zones of lateral confinement of the waveguide.
- the nitride layer 15 then serves as a mask for partial oxidation of the silicon film 13.
- This oxidation defines the geometry of the optical components.
- FIG. 1C shows the lateral confinement zones 21 and 22 obtained, the silicon part 20 constituting the heart of the waveguide.
- the silicon film 13 must be thinned in the regions where components such as transistors will be produced. This production technique provides interfaces of good optical quality between the silicon guide and the confining silica.
- FIG. 2A to 2C are cross-sectional and partial views.
- FIG. 2A shows an SOI substrate 30 consisting of a solid part or support 31 of silicon successively supporting a layer 32 of silicon oxide and a film 33 of silicon.
- a mask 35 of resin has been formed on the film 33 in order to delimit a waveguide to be produced in the film 33.
- FIG. 2B shows the result obtained after etching the film 33 through the mask 35.
- Two trenches 36 and 37 define the location of the lateral confinement zones, the silicon part 40 constituting the heart of the waveguide. The mask 35 is then removed.
- FIG. 2C shows the result obtained after the deposition of a layer of silica 43 on the etched silicon film 33.
- the silica fills the trenches made previously to create lateral confinement zones 41 and 42.
- FIG. 3 is a cross-sectional representation of part of an integrated circuit showing the location of optical microguides according to the present invention.
- the SOI substrate 50 consists of a silicon support 51 supporting a layer of silica 52 and a silicon film 53. From the silicon film 53, an optical interconnection system comprising silicon ribbons 54 and 55 has been produced. delimited by lateral containment zones. Functional blocks 56 and 57 have also been made in the silicon film 53.
- a layer 58 which is in fact a superposition of several layers, covers the silicon film 53. The layer 58 ensures the lateral confinement of the silicon ribbons 54 and 55. It incorporates horizontal electrical connections in the routing channels 60 and vertical connections 61 between the metallization levels and towards the functional blocks 56 and 57.
- FIG. 3 clearly shows that the optical interconnection system is arranged between the functional blocks 56 and 57 and under routing channels 60.
- the characteristics of the optical distribution of the clock according to the present invention make it possible to use it to convey the fastest clock. This will be detected at each block to generate its local electric clock system. Clocks of more global levels will be obtained by detection and division of the optical clock. They will be distributed electrically. A phase loop will align, at the level of each block, the phase of its fast clock on that of communication.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002515489A JP2004505310A (ja) | 2000-07-27 | 2001-07-26 | Soi基板上に形成されたマイクロエレクトロニクス回路における光学的相互接続システム |
AU2001279919A AU2001279919A1 (en) | 2000-07-27 | 2001-07-26 | Optical interconnection system in a microelectronic circuit produced on a soi substrate |
CA002417143A CA2417143A1 (fr) | 2000-07-27 | 2001-07-26 | Systeme d'interconnexion optique dans un circuit microelectronique realise sur un substrat soi |
KR10-2003-7000960A KR20030018060A (ko) | 2000-07-27 | 2001-07-26 | 에스 오 아이 기판 상에 제조된 극소 전자 회로의 광 배선시스템 |
EP01958187A EP1303773A2 (fr) | 2000-07-27 | 2001-07-26 | Systeme d'interconnexion optique dans un circuit microelectronique realise sur un substrat soi |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0009851A FR2812405B1 (fr) | 2000-07-27 | 2000-07-27 | Systeme d'interconnexion optique pour circuit integre realise sur un substrat soi |
FR00/09851 | 2000-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002010816A2 true WO2002010816A2 (fr) | 2002-02-07 |
WO2002010816A3 WO2002010816A3 (fr) | 2002-05-23 |
Family
ID=8852974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2001/002456 WO2002010816A2 (fr) | 2000-07-27 | 2001-07-26 | Systeme d'interconnexion optique dans un circuit microelectronique realise sur un substrat soi |
Country Status (8)
Country | Link |
---|---|
US (1) | US20030156778A1 (fr) |
EP (1) | EP1303773A2 (fr) |
JP (1) | JP2004505310A (fr) |
KR (1) | KR20030018060A (fr) |
AU (1) | AU2001279919A1 (fr) |
CA (1) | CA2417143A1 (fr) |
FR (1) | FR2812405B1 (fr) |
WO (1) | WO2002010816A2 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7929814B2 (en) | 2003-04-23 | 2011-04-19 | Lightwire, Inc. | Sub-micron planar lightwave devices formed on an SOI optical platform |
JP5130621B2 (ja) * | 2005-11-24 | 2013-01-30 | ソニー株式会社 | 半導体基板の製造方法 |
JP4438835B2 (ja) | 2007-07-20 | 2010-03-24 | ソニー株式会社 | 高周波信号生成方法および高周波信号生成装置 |
KR20100061607A (ko) * | 2008-11-29 | 2010-06-08 | 한국전자통신연구원 | 고속 광배선 소자 |
US8842945B2 (en) | 2011-08-09 | 2014-09-23 | Soitec | Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates |
FR2979169B1 (fr) * | 2011-08-19 | 2014-04-25 | Soitec Silicon On Insulator | Systèmes semi-conducteurs intégrés en trois dimensions comportant des dispositifs photo-actifs |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5367585A (en) * | 1993-10-27 | 1994-11-22 | General Electric Company | Integrated microelectromechanical polymeric photonic switch |
US5958505A (en) * | 1995-02-06 | 1999-09-28 | Forschungszentrum Julich Gmbh | Layered structure with a silicide layer and process for producing such a layered structure |
US6063299A (en) * | 1998-10-23 | 2000-05-16 | Bookham Technology Limited | Manufacture of a silicon waveguide structure |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5057022A (en) * | 1989-03-20 | 1991-10-15 | Miller Robert O | Method of making a silicon integrated circuit waveguide |
US5394490A (en) * | 1992-08-11 | 1995-02-28 | Hitachi, Ltd. | Semiconductor device having an optical waveguide interposed in the space between electrode members |
US5559912A (en) * | 1995-09-15 | 1996-09-24 | International Business Machines Corporation | Wavelength-selective devices using silicon-on-insulator |
US5986331A (en) * | 1996-05-30 | 1999-11-16 | Philips Electronics North America Corp. | Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate |
US5838870A (en) * | 1997-02-28 | 1998-11-17 | The United States Of America As Represented By The Secretary Of The Air Force | Nanometer-scale silicon-on-insulator photonic componets |
JP3853905B2 (ja) * | 1997-03-18 | 2006-12-06 | 株式会社東芝 | 量子効果装置とblトンネル素子を用いた装置 |
US5987196A (en) * | 1997-11-06 | 1999-11-16 | Micron Technology, Inc. | Semiconductor structure having an optical signal path in a substrate and method for forming the same |
GB2339919B (en) * | 1998-07-17 | 2002-12-11 | Bookham Technology Ltd | Thermo-optic semiconductor device |
-
2000
- 2000-07-27 FR FR0009851A patent/FR2812405B1/fr not_active Expired - Fee Related
-
2001
- 2001-07-26 JP JP2002515489A patent/JP2004505310A/ja not_active Withdrawn
- 2001-07-26 KR KR10-2003-7000960A patent/KR20030018060A/ko not_active Application Discontinuation
- 2001-07-26 AU AU2001279919A patent/AU2001279919A1/en not_active Abandoned
- 2001-07-26 WO PCT/FR2001/002456 patent/WO2002010816A2/fr active Application Filing
- 2001-07-26 EP EP01958187A patent/EP1303773A2/fr not_active Withdrawn
- 2001-07-26 US US10/333,223 patent/US20030156778A1/en not_active Abandoned
- 2001-07-26 CA CA002417143A patent/CA2417143A1/fr not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5367585A (en) * | 1993-10-27 | 1994-11-22 | General Electric Company | Integrated microelectromechanical polymeric photonic switch |
US5958505A (en) * | 1995-02-06 | 1999-09-28 | Forschungszentrum Julich Gmbh | Layered structure with a silicide layer and process for producing such a layered structure |
US6063299A (en) * | 1998-10-23 | 2000-05-16 | Bookham Technology Limited | Manufacture of a silicon waveguide structure |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14, 31 décembre 1998 (1998-12-31) -& JP 10 261786 A (TOSHIBA CORP), 29 septembre 1998 (1998-09-29) * |
Also Published As
Publication number | Publication date |
---|---|
FR2812405B1 (fr) | 2003-06-20 |
KR20030018060A (ko) | 2003-03-04 |
AU2001279919A1 (en) | 2002-02-13 |
CA2417143A1 (fr) | 2002-02-07 |
FR2812405A1 (fr) | 2002-02-01 |
EP1303773A2 (fr) | 2003-04-23 |
US20030156778A1 (en) | 2003-08-21 |
WO2002010816A3 (fr) | 2002-05-23 |
JP2004505310A (ja) | 2004-02-19 |
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