WO2002005308A3 - A plasma reactor having a symmetric parallel conductor coil antenna - Google Patents

A plasma reactor having a symmetric parallel conductor coil antenna Download PDF

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Publication number
WO2002005308A3
WO2002005308A3 PCT/US2001/020717 US0120717W WO0205308A3 WO 2002005308 A3 WO2002005308 A3 WO 2002005308A3 US 0120717 W US0120717 W US 0120717W WO 0205308 A3 WO0205308 A3 WO 0205308A3
Authority
WO
WIPO (PCT)
Prior art keywords
ceiling
helical
axis
symmetry
coil antenna
Prior art date
Application number
PCT/US2001/020717
Other languages
French (fr)
Other versions
WO2002005308A2 (en
Inventor
John Holland
Valentin N Todorow
Michael Barnes
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/610,800 external-priority patent/US6409933B1/en
Priority claimed from US09/611,169 external-priority patent/US6685798B1/en
Priority claimed from US09/611,168 external-priority patent/US6414648B1/en
Priority claimed from US09/611,345 external-priority patent/US6462481B1/en
Priority claimed from US09/611,170 external-priority patent/US6694915B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP01950648A priority Critical patent/EP1301938A2/en
Priority to JP2002508822A priority patent/JP5160717B2/en
Publication of WO2002005308A2 publication Critical patent/WO2002005308A2/en
Publication of WO2002005308A3 publication Critical patent/WO2002005308A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors. In another embodiment, the antenna is a solenoidal segmented parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric side-by-side helical solenoids, each helical solenoid being offset by a distance on the order of a conductor width of the plurality of conductors from teh nearest other helical solenoids in a direction perpendicular to the axis of symmetry, whereby each helical solenoid has slightly different diameter.
PCT/US2001/020717 2000-07-06 2001-06-29 A plasma reactor having a symmetric parallel conductor coil antenna WO2002005308A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01950648A EP1301938A2 (en) 2000-07-06 2001-06-29 A plasma reactor having a symmetric parallel conductor coil antenna
JP2002508822A JP5160717B2 (en) 2000-07-06 2001-06-29 Plasma reactor with symmetrical parallel conductor coil antenna

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US09/611,168 2000-07-06
US09/610,800 US6409933B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetric parallel conductor coil antenna
US09/611,169 US6685798B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetrical parallel conductor coil antenna
US09/611,170 2000-07-06
US09/611,169 2000-07-06
US09/611,168 US6414648B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetric parallel conductor coil antenna
US09/611,345 2000-07-06
US09/611,345 US6462481B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetric parallel conductor coil antenna
US09/611,170 US6694915B1 (en) 2000-07-06 2000-07-06 Plasma reactor having a symmetrical parallel conductor coil antenna
US09/610,800 2000-07-06

Publications (2)

Publication Number Publication Date
WO2002005308A2 WO2002005308A2 (en) 2002-01-17
WO2002005308A3 true WO2002005308A3 (en) 2002-06-20

Family

ID=27541986

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/020717 WO2002005308A2 (en) 2000-07-06 2001-06-29 A plasma reactor having a symmetric parallel conductor coil antenna

Country Status (3)

Country Link
EP (1) EP1301938A2 (en)
JP (1) JP5160717B2 (en)
WO (1) WO2002005308A2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3820188B2 (en) * 2002-06-19 2006-09-13 三菱重工業株式会社 Plasma processing apparatus and plasma processing method
AU2002313941A1 (en) * 2002-07-26 2004-02-16 Plasmart Co. Ltd. Inductively coupled plasma generator having lower aspect ratio
US6852639B2 (en) 2002-07-31 2005-02-08 Infineon Technologies Ag Etching processing method for a material layer
KR100486724B1 (en) 2002-10-15 2005-05-03 삼성전자주식회사 Inductively coupled plasma generating apparatus with serpentine coil antenna
JP2006216903A (en) * 2005-02-07 2006-08-17 Hitachi High-Technologies Corp Plasma processing unit
CN101136279B (en) 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 Jigger coupling coil and jigger coupling plasma device
US8314560B2 (en) 2006-11-28 2012-11-20 Samco Inc. Plasma processing apparatus
US8956500B2 (en) 2007-04-24 2015-02-17 Applied Materials, Inc. Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
JP5229995B2 (en) * 2008-04-07 2013-07-03 株式会社アルバック Antenna, AC circuit, and plasma processing apparatus
JP5551343B2 (en) * 2008-05-14 2014-07-16 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
JP5231308B2 (en) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 Plasma processing equipment
US20110094994A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Inductively coupled plasma apparatus
US20110094683A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Rf feed structure for plasma processing
JP5851682B2 (en) 2010-09-28 2016-02-03 東京エレクトロン株式会社 Plasma processing equipment
KR101202957B1 (en) * 2010-10-19 2012-11-20 주성엔지니어링(주) Antenna for generating plasma and Apparatus for treating substrate including the same
JP6581602B2 (en) 2014-02-06 2019-09-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ In-line DPS chamber hardware design that allows axial symmetry for improved flow conductance and uniformity
KR101712263B1 (en) * 2014-04-22 2017-03-03 김일욱 helical resonance plasma antenna and plasma generating equipment including the same
JP2015159118A (en) * 2015-03-26 2015-09-03 東京エレクトロン株式会社 plasma processing apparatus
KR102308040B1 (en) * 2015-06-15 2021-09-30 어플라이드 머티어리얼스, 인코포레이티드 Source RF power dividing internal coil to improve BCD and etch depth performance
KR101932117B1 (en) * 2017-08-11 2018-12-24 피에스케이 주식회사 Substrate treating apparatus, substrate treating method and plasma generating unit
US11521828B2 (en) 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
KR101972783B1 (en) * 2017-10-13 2019-08-16 주식회사 유진테크 Icp antenna and plasma processing apparatus including the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558722A (en) * 1994-09-14 1996-09-24 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus
EP0840349A2 (en) * 1996-11-04 1998-05-06 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing power, voltage, current or dI/dt control
US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577100A (en) * 1980-06-16 1982-01-14 Nippon Electron Optics Lab Plasma generator
CA2047571C (en) * 1990-07-24 2001-12-18 Ian Lawrence Turner Inductively coupled plasma spectroscopy
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
DE69510427T2 (en) * 1994-10-31 1999-12-30 Applied Materials Inc Plasma reactors for semiconductor wafer treatment
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558722A (en) * 1994-09-14 1996-09-24 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus
US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
EP0840349A2 (en) * 1996-11-04 1998-05-06 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing power, voltage, current or dI/dt control
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part

Also Published As

Publication number Publication date
WO2002005308A2 (en) 2002-01-17
EP1301938A2 (en) 2003-04-16
JP5160717B2 (en) 2013-03-13
JP2004509429A (en) 2004-03-25

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