WO2002000963A1 - Depot par faisceau selectif - Google Patents

Depot par faisceau selectif Download PDF

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Publication number
WO2002000963A1
WO2002000963A1 PCT/US2001/020067 US0120067W WO0200963A1 WO 2002000963 A1 WO2002000963 A1 WO 2002000963A1 US 0120067 W US0120067 W US 0120067W WO 0200963 A1 WO0200963 A1 WO 0200963A1
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WO
WIPO (PCT)
Prior art keywords
gas
chemical vapor
vapor deposition
reactant gas
deposition zone
Prior art date
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PCT/US2001/020067
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English (en)
Inventor
Steven John Ouderkirk
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Steven John Ouderkirk
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Publication date
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Publication of WO2002000963A1 publication Critical patent/WO2002000963A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45593—Recirculation of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the invention relates to an apparatus for producing a three-dimensional part by
  • CVD Chemical vapor deposition
  • LCVD laser chemical vapor deposition
  • SALD selective area laser deposition
  • Patent No. 5,169,579, Marcus describes the use of catalysts to increase deposit nucleation for improved materials properties and growth rates.
  • Nd single and multimode Nd: YAG lasers. These lasers can use lenses with a small numerical
  • High numerical aperture lenses may be used to increase laser intensity at a
  • Purging systems using a gas directing plenum are used in laser systems that
  • Cutting and perforation has a relatively wide operating window to
  • the present invention addresses the shortcomings of traditional LCVD. SUMMARY OF THE INVENTION
  • the present invention includes a chemical vapor deposition (CVD) system that incorporates at least one semiconductor diode laser to provide a directed
  • an energy beam that decomposes a reactant gas in a deposition zone In one embodiment, an
  • array of independently operable diode lasers may be configured to provide multiple
  • the diode laser includes a heat exchanger configured to pass a reactant gas through the heat exchanger to pre-heat the reactant gas while providing cooling to the diode laser.
  • the energy from the diode laser is conveyed to the deposition zone through an optical fiber, or through an array of optical fibers.
  • the laser output is controlled in a
  • the present invention includes a miniature optics CVD system
  • the optical element is within 10 mm of a deposit created in the deposition zone.
  • the present invention includes a CVD system that
  • an objective lens configured to confocally focus an energy beam from an energy source onto a focal point in a deposition zone, while simultaneously collecting light
  • the energy beam may include infrared light beams, visible light beams,
  • the optical sensor(s) may determine the temperature of the deposition zone by detecting thermal emission from the deposition zone; the position of a deposition
  • the lateral geometry is the shape and size of the deposition zone in the plane perpendicular to the optic axis of the
  • the CVD system is used to provide more efficient
  • the optical sensor(s) are used in a
  • the present invention includes a CVD system having a small-
  • volume gas plenum that is positioned to direct a reactant gas into a deposition zone.
  • effective volume of said gas plenum is less than 10 cm 3 , preferably less than 1 cm 3 , and
  • the CVD system includes an
  • objective lens a deposition zone, optionally a window positioned between the objective
  • reactant gas is preferably pre-heated prior to entering the deposition zone.
  • the present invention includes a method of recycling reactant
  • waste gas out of the reaction chamber into a gas scrubbing system; (d) scmbbing solid particulate materials and gaseous waste products from the waste gas to give a second reactant gas having desirable gas components; (e) performing on-line analysis of the composition of the second reactant gas and providing feedback to a gas conditioning
  • Figure 1 is a schematic view of the major elements of the device of this invention
  • Figure 2 is a schematic view of the detail of a reactant gas plenum that will minimize reactant gas mixing.
  • Figure 3 is a schematic view of the detail of a reactant gas plenum that provides
  • Figure 4 is a schematic view of the detail of how a multi-element diode laser can be
  • the present invention is directed to the production of stmctures composed of
  • FIG. 1 schematically shows the major elements of a chemical vapor deposition system of the present invention, including an optical assembly 10, mounted on a single axis vertical translation stage 12, a reaction cell 11 mounted on a dual axis horizontal translation stage 13, a reactant gas processing system 20, and a
  • the optical assembly 10 provides an energy source 5
  • the energy beam 8 is, for example, an infrared light beam, visible light beam, ultraviolet light beam, ion beam, electron beam, or
  • a focused plasma beams but is preferably a light beam from a visible or infrared laser such
  • the focused energy beam 8 causes the
  • deposition zone 2 to be brought to a temperature sufficient to decompose the reactant gas provided by the reactant gas processing system 20, resulting in deposition of a solid
  • the preferred energy source of the present invention is a semiconductor diode
  • semiconductor diode lasers can have sufficient power to be used in a chemical vapor deposition system to create high strength pyrolytic deposits. Since the power density of a laser diode is limited, it is preferred that the laser power be maintained at a relatively constant power, and that the nature of the deposit be controlled through translation rate or
  • composition of the substrate causes substantial thermal conductivity from the deposition zone.
  • Suitable semiconductor laser diodes include index guided cavity lasers, gain guided
  • diode cavity arrays may be used to create a corresponding array of deposition zones, where the array of deposition zones can be used to create a combination of separate or connected stmctures through controlled laser deposition. Use of arrays of deposition
  • Fig. 4 An example of how a one-dimensional laser diode cavity array may be used to create a corresponding array of deposition zones is shown in Fig. 4.
  • diode 30 having a one-dimensional diode laser cavity array can utilize objective lens 3 to
  • a similar array may be achieved through an array of individual diode lasers.
  • the laser is
  • power from each cavity of the laser diode array may be independently controlled and conveyed to the deposition zones 32 through a transfer lens, an optical magnification or
  • the optical fibers may be grouped in a number of configurations, depending on the specific application.
  • the output of the optical fibers may be focused on multiple
  • Focusing of the output of the optical fibers may be accomplished through a lens or lens assembly positioned on each fiber, or through a lens or lens assembly on an array of optical fibers.
  • Semiconducting laser diodes have limited output power, and in high power laser
  • the amount of laser power required to grow a stmcture can vary by over a factor of about four, depending on the effective thermal conductivity from the deposition zone to the substrate. For example, considerably more power is required to achieve a give growth rate on a
  • planar substrate compared to on the tip of a fiber.
  • Index or gain-guided semiconducting lasers are best corrected for astigmatism and divergence by use of a circularizing fiber which is a cylindrical lens placed proximate to the emitting facet of the laser diode so as to reduce the divergence of the laser in the fast
  • astigmatism may be corrected with a tilted plate as described by
  • a circularizing fiber lens is the preferred method
  • Circularizing fiber lenses are the
  • VCSEL VCSEL emitting lasers
  • VCSELs may be easily incorporated into a one or two-dimensional array for parallel
  • Cooling of the laser diode may be achieved through heat transfer to the reactant
  • the laser diode mounted on a small heat exchanger, and passing the reactant gases tlirough the exchanger, then to the reaction zone can produce a highly compact system. In this case, it may be desired to cool the reactant gases before entering the heat exchanger. A significant amount of heat may be removed by supplying at least one component of the reactant gas in a liquefied state, and allowing vaporization of the liquid either before entering or within the heat exchanger.
  • the objective lens 3 is
  • a lens capable of confocally collecting light emitted from deposition zone 2 to
  • Beam splitter 4 preferably selectively directs the majority of energy beam 8 to the focal point 7 and directs the majority of light emission 9 from deposition zone 2 to optical
  • Beam splitter 4 may divert a small fraction of all wavelengths to sensor 6 or may
  • Fig. 1 is for illustrative purposes only; it is within the scope of this invention to include multiple
  • the focal length of objective lens 3 depends on the degree of collimation of
  • the CVD system of the present invention includes a miniature optical
  • element includes an objective lens 3 that focuses the energy beam into a deposition zone
  • a window 19 positioned between the objective lens and the deposition zone.
  • the numerical aperture is at least
  • Optical sensor(s) One or more optical sensors 6 detect thermal emission or reflected laser light from the deposition zone 2 to determine, for example, the temperature of the deposition zone 2,
  • the optical sensor 6 may have a
  • sensing element single sensing element, or may include a number of sensing elements, devices, and optical
  • optical sensor 6 can be used to determine the temperature of deposition zone 2 by measuring the intensity of thermal radiation from deposition zone 2. Temperature may be more accurately determined by the ratio of light intensity from deposition zone 2 measured in two different wavelength ranges. The light intensity at
  • different wavelength ranges may be independently measured by using two photo detectors
  • a matrixed color filter on a photodetector array may be in the form of a common color charged-coupled device (CCD) video detector.
  • CCD color charged-coupled device
  • optical sensor 6 can be used to determine the physical
  • optical sensor 6 can measure the divergence or convergence of light emission 9 relative to energy beam 8. If light emission 9 is diverging, the focus of objective lens 3 is effectively below the
  • the degree of divergence or convergence can be related to the physical displacement between the focal point of objective lens 3 and deposition zone 2.
  • Suitable methods for determining the optical properties of light emission 9 include systems commonly used for automatically measuring the focal point of an optical train, such as, for
  • optical sensor 6 can be used to determine lateral geometry by imaging the reflected or emitted light 9 from the deposition zone 2 onto a multi-pixel optical sensor such as a charged-coupled device (CCD). The pattern of light detected by a multi-pixel optical sensor such as a charged-coupled device (CCD).
  • CCD charged-coupled device
  • the sensor can be used to determine the actual shape and size of the deposition zone 2 by
  • the degree of precision in lateral geometry measurements is a function of the light and optical system properties, but can typically resolve features as small as about 100
  • deposition zone can be used to determine the localized thermal gradient.
  • the growth of material by selective beam deposition may occur over a range of temperatures. These temperatures are a function of the decomposition temperature of the reactant gas, the intended morphology of the deposit, the deposition rate, and the degree
  • the deposition zone temperature can be monitored and
  • the gas flow, translation rate, and/or the gas composition are the gas flow, translation rate, and/or the gas composition.
  • One method of controlling the deposition zone temperature is by controlling the
  • the photon flux from a semiconductor laser diode may be affected by varying the laser drive current. Modulation of the laser power provides a
  • the modulation frequency is preferably sufficient to prevent the
  • deposition zone temperature from oscillating outside the range of temperature that will
  • the photon flux delivered by the laser can
  • temperature at the deposition zone is to spread the laser beam over a larger area, such as
  • Yet another way of controlling the deposition zone temperature is by altering the translation speed of the focal point of the laser beam relative to a region on a substrate so that the substrate will act as a variable heat sink.
  • the translation rate is controlled by the computer to allow a feedback loop to
  • the growth of material by selective beam deposition is unstable due to the fact that
  • material will deposit over a certain area above and below the focal point, where the photon flux is sufficiently concentrated to cause decomposition of the reactant gas. For example, even when the focal point is not moving, material will continue to deposit in the direction of the focusing lens along the optic axis until the laser light is not concentrated
  • the geometry of a deposited part can be controlled in a feedback loop using a
  • optical sensor 6 The measured position is combined with the coordinates of the focal
  • the tme position of the deposition surface is compared with the
  • the growth rate of deposited material can affect important characteristics related to the growth of geometric stmctures. For example, if the growth rate is significantly
  • the morphology of the deposit may change. Changes in growth
  • the growth rate of deposited materials may also affect changes in morphology in the cross-section of the growth, and may change stress forces within the deposit.
  • the growth rate of deposited materials may be predicted from the temperature of the deposition zone, or from physically measuring the
  • the growth rate by optical measurements.
  • the growth rate is determined by several factors, including gas composition, the effective thermal conductivity from deposition zone 2 to
  • the substrate 1 the gas pressure, the gas temperature, and the laser wavelength, intensity and power. If the laser power is modulated, the laser peak power, modulation frequency, and duty cycle also affect growth rate. The deposition growth rate is also determined by the
  • the rate of translation of the deposition zone may be increased to maintain a constant
  • Measuring the temperature of the deposition zone can allow
  • the temperature of the deposition zone may be
  • the deposition rate may be increased if a portion of a stmcture being grown does not require a critical strength.
  • the laser power may be changed, the translation rate changed, or other parameters affecting growth may
  • the deposition zone lateral geometry can also be controlled in a feedback loop using the computer control system 21 of Fig. 1 to monitor the lateral geometry measured
  • sensor 6 compares the measured geometry to a target geometry. If there is a
  • the geometry at the deposition zone is a function of the distribution and shape of the photon flux delivered to the deposition zone from the laser and the rate that heat is
  • minimum feature size for lateral geometry is a function of the laser beam spot size at the
  • deposition zone normally features less than half the spot size can not be produced reliably.
  • One method of altering the deposition zone lateral geometry is by forming an
  • the shape of the mask may be static or dynamic.
  • a static image may be static or dynamic.
  • a dynamic mask may be a filter in the shape of the desired geometry.
  • a dynamic mask may consist of
  • each mirror element is directed along or away from the optic axis to
  • An advantage of a dynamic multi-element mask is the capability to
  • optical sensors 6 are
  • Thermal decomposition of reactant gases often has a high activation energy
  • the temperature of the deposition zone is used to heat the gases to the reaction temperature. Additionally, the reactant gases can cool the surrounding substrate, causing
  • Preheating the reactant gases can result in reduction of the laser power
  • the reactant gases can reduce convective currents, increase gas velocity at the heating zone for the same plenum geometry without increasing gas consumption rates, and reduce gas-momentum induced motion in the substrate for the same gas velocity and turbulence.
  • the reactant gas may be preheated in several ways, including heating parts of the reactant
  • gas processing system 20 including the inlet, manifold, and/or plenum), heating the
  • the laser diode when a semiconductor diode laser is used as the energy beam source 5, the laser diode may be mounted on a small heat exchanger, and the reactant gases can be passed through the exchanger to preheat the reactant gases while cooling the diode laser.
  • Suitable reactant gases for use in the CVD system of the present invention include,
  • gaseous alkanes including methane, ethane, propane, butane, and
  • alkenes including ethylene, propylene, butene, butadiene, and their isomers
  • alkynes including acetylene and methylacetylene
  • organometallics including trimethyl aluminum, nickel tetracarbonyl, iron pentacarbonyl, tetramethyl silane), hydrides
  • halides including boron trichloride, titanium tetrachloride,
  • gas composition may include a reactant such as hydrogen to scavenge graphitic carbon or
  • Inert gases may also be used to change the
  • Suitable inert gases include helium, neon, argon, nitrogen, and carbon dioxide.
  • the deposition zone 2 is heated by an energy beam 8 to a temperature that results in decomposition or reaction of a reactant gas.
  • the decomposition or reaction should be performed by an energy beam 8 to a temperature that results in decomposition or reaction of a reactant gas.
  • Fig. 2 shows a deposition zone 2, a substrate 1 (which includes all material on which a deposit is formed, including mandrels, supporting stmctures, and previously deposited material) within the deposition zone 2, a focal point 7 of an energy beam 8, an objective lens 3, an inlet for a reactant gas 23, a manifold for distributing gas 24, and a plenum 22.
  • a substrate 1 which includes all material on which a deposit is formed, including mandrels, supporting stmctures, and previously deposited material
  • plenum 22 the dimensions of plenum 22 are critical. Increasing the length of plenum 22
  • plenum may allow higher gas velocities at the deposition zone 2. Reducing the length of the plenum may reduce the likelihood of interference with the substrate 1, but may result in reduced gas velocity at deposition zone.
  • Other plenum shapes may be used without
  • the velocity of gas through the plenum should be sufficiently high to prevent deposition of reaction byproducts on the lens or window, but not so high as to cause motion of the deposit being grown.
  • the reactant gas plenum can serve several functions. In one embodiment of the
  • the gas plenum is configured so that the gas flow prevents
  • the plenum can also increase deposition rates by providing a high velocity gas stream directed at the deposition zone, it can increase the fraction of
  • the deposition zone serves to reduce the turbulence of the gas stream directed at the deposition zone.
  • the volume of the plenum can be
  • a reactive gas plenum also allows the reactant gas in the reaction
  • diluting the reactant gases in the chamber with an inert gas has the advantage of purging out waste gases and preventing the buildup of mixtures of reactant gases. Mixtures of reactant gases may be undesirable if the mixture results from switched gases at the plenum. Undiluted by inert gas, this mixture may complicate recycling schemes, or may
  • gas inlet 23 of Fig. 2 or gas inlet 23 of Fig. 3 may be
  • the effective volume of gas between the valve assembly and the deposition zone is less than 10 cm 3 , more preferably, the volume will be less that 1 cm 3 , most preferably the volume will be less than 0.1 cm 3 .
  • Effective volume is defined here as the volume of gas that needs to be introduced by a valve of the valve assembly that is
  • gas plenum can be positioned to utilize the momentum of the
  • Gas inlet 23 feeds gas to manifold 24, which symmetrically distributes
  • the gas is directed along the optical surface 25,
  • a window placed between the objective lens 3 and the deposition zone 2 is particularly
  • the plenum design may be altered to meet the specific geometry and configuration of the laser beam or beams.
  • a semiconducting laser diode array may produce
  • each beam be circularized by a fiber lens
  • the plenum for this system may be designed to provide a rectangular profile of gas flow proximate to the deposition zones.
  • a 840 nm laser diode with an optical power of 1.0 Watt emitting from a 100 by 1 ⁇ m aperture was coUimated with a 0.25 NA apochromat microscope objective.
  • the laser was mounted on a heat sink controlled at 20°C, and the laser drive current was
  • the coUimated laser beam was passed through an Edmund Scientific cold mirror, model 43959 mounted at 45° relative to the propagation direction axis of the laser beam,
  • the size of the coUimated laser beam incident on the focusing beam was such that about 95% of the laser beam was accepted by the objective lens.
  • substrate was 5 mm, and the window was in contact with the microscope objective.
  • MAPPTM gas 44% methyl acetylene-propadiene, 56% liquefied petroleum gas, available from BOC gases, Murray Hill, NJ
  • MAPPTM gas 44% methyl acetylene-propadiene, 56% liquefied petroleum gas, available from BOC gases, Murray Hill, NJ
  • the manifold uniformly distributed the gas around window placed in front of the objective lens, and through a 1.0 mm annular gap formed by a 0.2 mm thick plate positioned parallel to the window and in a plane perpendicular to the direction axis of the laser beam. The gas flowed along the window through the gap, then
  • the optical assembly including the objective lens,
  • the fiber produced was approximately 25 mm
  • Example 1 The experiment of Example 1 was repeated, except the window position was at a
  • Example 1 A carbon fiber 3 mm long was grown by moving the microscope
  • Example 1 The experiment of Example 1 was repeated, except the gas flow was 100 seem. The
  • optical assembly including the objective lens, window, and plate, was moved upward,
  • Example 1 The experiment of Example 1 was repeated, but a fiber 50 mm long was grown.
  • the experiment of Example 1 was repeated, but a fiber 50 mm long was grown.
  • Example 1 The experiment of Example 1 was repeated, except the laser used was an
  • the laser beam was coUimated with an aspheric lens
  • the objective lens upward from the substrate at a rate of 0.05 mm/second.
  • the fiber had a
  • a 840 nm laser diode with an optical power of 1.0 Watt (Optopower model OPC-
  • A001-840-CT/L laser diode with a fiber circularizing lens was coUimated with an aspheric lens (available from Geltech Corp., Orlando, FL, model 350330). The laser was mounted
  • the coUimated laser beam was passed through an Edmund Scientific cold mirror, model 43959 mounted at 45° with the laser beam incident on the mirror at a p-polarization.
  • the laser light was
  • the paper substrate was
  • a CCD camera was used to obtain an image of the laser beam incident on the
  • the multimode output of the laser diode produced two spots, each about 3
  • the optical assembly including the objective lens, window, and plate, was moved upward,
  • the fiber cross-section was similar to the beam profile, consisting of two
  • Example 6 The experiment of Example 6 was repeated, but a transparent diffuser was placed between the CCD imaging lens and the cold mirror.
  • the objective lens collected light
  • the image on the diffuser was approximately 5 mm in diameter.
  • the brightness, integrated light intensity measured over a 10 mm diameter circle centered on the spot on the illuminated diffuser, and spot size varied. Brightness and integrated intensity was at a maximum when the focal point of the objective lens was at the fiber tip, and decreased when the focal point was moved either above or below the fiber tip.
  • the spot size was at a minimum when the focal point was at the fiber tip.
  • example shows that brightness, integrated light intensity, and projected spot size can be
  • the gas is recycled to reduce consumption of supplies and to reduce handling of waste product.
  • the reactant gas processing system 20 of Fig. 1 includes a supply of reactant gas 15,
  • reaction cell 11 The manifold 14 is used to control the delivery rate and composition of
  • the reactant gas conditioning system 16 is used to control the temperature, pressure, and composition of the reactant gas before introduction to the
  • reaction cell 11 The reactant gas is thermally decomposed by an energy beam 8 to form a deposit of solid material.
  • the remaining gas in the reaction chamber is optionally diluted
  • the waste reactant gas is scrubbed to remove solid (particulate) and gaseous waste products to form a second reactant gas, and any gases that are toxic or harmful to equipment are removed and the non-hazardous components are vented to the ambient environment.
  • the second reactant gas is analyzed in real time by computer control system
  • the recirculated reactant gas is conditioned to have a similar temperature, pressure, and composition as the first reactant gas and is reintroduced to the reaction cell 11.
  • a baffle 17 may be positioned between the reactant
  • the reactant gas conditioning system 16 may also be used to purge the reaction cell 11 of reactant gas by delivering an inert gas such as argon from the gas supply 15 to the reaction cell 11,
  • Fig. 1 shows the method for scanning
  • the energy beam 8 can be coUimated, it is also possible to translate just the objective lens 3 along the axis of the laser beam, independent of the entire optical assembly.
  • axes are normally orthogonal to each other in order to simplify the control algorithms.
  • a feedback system such as linear encoders is desirable, but is
  • the focusing lens can be rotated around one or two axis perpendicular to the approximate propagation axis of energy beam 8. These axes are
  • Galvanometer scanning is frequently used where a rapid scan rate is desired in the plane normal to the optic axis.
  • Galvanometer scanning has the advantage of being a fast and inexpensive means to accomplish scanning at the cost of less
  • the focal point placement accuracy is a function of the ability to measure angular deflection and the

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil et un procédé permettant de déposer de la matière à partir d'une phase gazeuse de façon à produire un objet cohérent tridimensionnel. L'appareil comporte un ou plusieurs faisceaux d'énergie, tels que ceux qui sont produits par un laser à diode, qui sont focalisés sur des points à l'intérieur d'une chambre de réaction contenant un gaz réactant. La lumière provenant des lasers est suffisamment intense pour provoquer un chauffage du substrat ou de la matière préalablement déposée jusqu'à une température suffisante pour décomposer thermiquement le gaz réactant de façon à former un dépôt de matière sur un substrat ou de la matière préalablement déposée. La translation et la rotation du point focal ou du substrat support sont commandés l'un par rapport à l'autre de façon à permettre la formation de structures tridimensionnelles. Un ou plusieurs types de détecteurs optiques en alignement confocal avec le laser surveillent la température du dépôt de matière à proximité du point focal du laser, la géométrie latérale du dépôt de matière à proximité du point focal du laser, ou la distance entre le point focal et le dépôt de matière à proximité du point focal du laser. Les données fournies par les détecteurs optiques servent par rétroaction à définir des paramètres d'exploitation servant à générer des structures à géométrie et morphologie précises.
PCT/US2001/020067 2000-06-23 2001-06-22 Depot par faisceau selectif WO2002000963A1 (fr)

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Cited By (6)

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US6932865B2 (en) 2003-04-11 2005-08-23 Lockheed Martin Corporation System and method of making single-crystal structures through free-form fabrication techniques
US7261779B2 (en) 2003-06-05 2007-08-28 Lockheed Martin Corporation System, method, and apparatus for continuous synthesis of single-walled carbon nanotubes
EP1837904A2 (fr) * 2003-03-26 2007-09-26 Osaka Prefecture Procédé pour la fabrication d'un substrat au carbure de silicium monocristallin de type couche isolante enterrée et dispositif de fabrication correspondant
CN105698698A (zh) * 2014-11-26 2016-06-22 北京智朗芯光科技有限公司 一种单透镜型检测晶片基底二维形貌和温度的装置
CN105698964A (zh) * 2014-11-26 2016-06-22 北京智朗芯光科技有限公司 一种单透镜型晶片基底温度测量装置
US9844917B2 (en) 2014-06-13 2017-12-19 Siemens Product Lifestyle Management Inc. Support structures for additive manufacturing of solid models

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1837904A2 (fr) * 2003-03-26 2007-09-26 Osaka Prefecture Procédé pour la fabrication d'un substrat au carbure de silicium monocristallin de type couche isolante enterrée et dispositif de fabrication correspondant
EP1837904A3 (fr) * 2003-03-26 2007-12-26 Osaka Prefecture Procédé pour la fabrication d'un substrat au carbure de silicium monocristallin de type couche isolante enterrée et dispositif de fabrication correspondant
US6932865B2 (en) 2003-04-11 2005-08-23 Lockheed Martin Corporation System and method of making single-crystal structures through free-form fabrication techniques
US7261779B2 (en) 2003-06-05 2007-08-28 Lockheed Martin Corporation System, method, and apparatus for continuous synthesis of single-walled carbon nanotubes
US9844917B2 (en) 2014-06-13 2017-12-19 Siemens Product Lifestyle Management Inc. Support structures for additive manufacturing of solid models
CN105698698A (zh) * 2014-11-26 2016-06-22 北京智朗芯光科技有限公司 一种单透镜型检测晶片基底二维形貌和温度的装置
CN105698964A (zh) * 2014-11-26 2016-06-22 北京智朗芯光科技有限公司 一种单透镜型晶片基底温度测量装置
CN105698698B (zh) * 2014-11-26 2020-01-21 北京智朗芯光科技有限公司 一种单透镜型检测晶片基底二维形貌和温度的装置

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