WO2001095389A3 - Shielding of analog circuits on semiconductor substrates - Google Patents

Shielding of analog circuits on semiconductor substrates Download PDF

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Publication number
WO2001095389A3
WO2001095389A3 PCT/US2001/018153 US0118153W WO0195389A3 WO 2001095389 A3 WO2001095389 A3 WO 2001095389A3 US 0118153 W US0118153 W US 0118153W WO 0195389 A3 WO0195389 A3 WO 0195389A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
shielding
semiconductor substrates
analog circuits
region
Prior art date
Application number
PCT/US2001/018153
Other languages
French (fr)
Other versions
WO2001095389A2 (en
Inventor
Odin Prigge
Original Assignee
Infineon Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Corp filed Critical Infineon Technologies Corp
Priority to EP01946084A priority Critical patent/EP1287554A2/en
Publication of WO2001095389A2 publication Critical patent/WO2001095389A2/en
Publication of WO2001095389A3 publication Critical patent/WO2001095389A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

A semiconductor device, in accordance with the present invention, includes a doped semiconductor substrate (102) wherein the doping of the substrate has a first conductivity and a device region (110) formed near a surface of the substrate. The device region includes at least one device well. A buried well (104) is formed in the substrate below the device region. The buried well is doped with dopants having a second conductivity. A trench region (124) surrounds the device region and extends below the surface of the substrate to at least the buried well such that the device region is isolated from other portions of the substrate by the buried well and the trench region.
PCT/US2001/018153 2000-06-06 2001-06-05 Shielding of analog circuits on semiconductor substrates WO2001095389A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP01946084A EP1287554A2 (en) 2000-06-06 2001-06-05 Shielding of analog circuits on semiconductor substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58824300A 2000-06-06 2000-06-06
US09/588,243 2000-06-06

Publications (2)

Publication Number Publication Date
WO2001095389A2 WO2001095389A2 (en) 2001-12-13
WO2001095389A3 true WO2001095389A3 (en) 2002-04-18

Family

ID=24353056

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/018153 WO2001095389A2 (en) 2000-06-06 2001-06-05 Shielding of analog circuits on semiconductor substrates

Country Status (3)

Country Link
EP (1) EP1287554A2 (en)
KR (1) KR20030007881A (en)
WO (1) WO2001095389A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080001262A1 (en) * 2006-06-29 2008-01-03 Telesphor Kamgaing Silicon level solution for mitigation of substrate noise

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60105265A (en) * 1983-11-11 1985-06-10 Toshiba Corp Manufacture of complementary type semiconductor device
EP0178649A2 (en) * 1984-10-17 1986-04-23 Hitachi, Ltd. Complementary semiconductor device
US4926233A (en) * 1988-06-29 1990-05-15 Texas Instruments Incorporated Merged trench bipolar-CMOS transistor fabrication process
JPH03222455A (en) * 1990-01-29 1991-10-01 Matsushita Electron Corp Semiconductor device
JPH07273184A (en) * 1994-04-01 1995-10-20 Mitsubishi Electric Corp Semiconductor device and its fabrication
EP0817268A1 (en) * 1996-06-27 1998-01-07 Nec Corporation Semiconductor integrated circuit device with digital circuit and analog circuit on common substrate and fabrication process therefor
US5793093A (en) * 1997-03-11 1998-08-11 Lucent Technologies Inc. Substrate isolation for analog/digital IC chips
JPH11233616A (en) * 1998-02-17 1999-08-27 Toshiba Corp Semiconductor device and its manufacturing method
US6051868A (en) * 1996-11-15 2000-04-18 Nec Corporation Semiconductor device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60105265A (en) * 1983-11-11 1985-06-10 Toshiba Corp Manufacture of complementary type semiconductor device
EP0178649A2 (en) * 1984-10-17 1986-04-23 Hitachi, Ltd. Complementary semiconductor device
US4926233A (en) * 1988-06-29 1990-05-15 Texas Instruments Incorporated Merged trench bipolar-CMOS transistor fabrication process
JPH03222455A (en) * 1990-01-29 1991-10-01 Matsushita Electron Corp Semiconductor device
JPH07273184A (en) * 1994-04-01 1995-10-20 Mitsubishi Electric Corp Semiconductor device and its fabrication
EP0817268A1 (en) * 1996-06-27 1998-01-07 Nec Corporation Semiconductor integrated circuit device with digital circuit and analog circuit on common substrate and fabrication process therefor
US6051868A (en) * 1996-11-15 2000-04-18 Nec Corporation Semiconductor device
US5793093A (en) * 1997-03-11 1998-08-11 Lucent Technologies Inc. Substrate isolation for analog/digital IC chips
JPH11233616A (en) * 1998-02-17 1999-08-27 Toshiba Corp Semiconductor device and its manufacturing method

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 009, no. 255 (E - 349) 12 October 1985 (1985-10-12) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 506 (E - 1148) 20 December 1991 (1991-12-20) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 02 29 February 1996 (1996-02-29) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13 30 November 1999 (1999-11-30) *

Also Published As

Publication number Publication date
WO2001095389A2 (en) 2001-12-13
KR20030007881A (en) 2003-01-23
EP1287554A2 (en) 2003-03-05

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