WO2001095389A3 - Shielding of analog circuits on semiconductor substrates - Google Patents
Shielding of analog circuits on semiconductor substrates Download PDFInfo
- Publication number
- WO2001095389A3 WO2001095389A3 PCT/US2001/018153 US0118153W WO0195389A3 WO 2001095389 A3 WO2001095389 A3 WO 2001095389A3 US 0118153 W US0118153 W US 0118153W WO 0195389 A3 WO0195389 A3 WO 0195389A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- shielding
- semiconductor substrates
- analog circuits
- region
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01946084A EP1287554A2 (en) | 2000-06-06 | 2001-06-05 | Shielding of analog circuits on semiconductor substrates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58824300A | 2000-06-06 | 2000-06-06 | |
US09/588,243 | 2000-06-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001095389A2 WO2001095389A2 (en) | 2001-12-13 |
WO2001095389A3 true WO2001095389A3 (en) | 2002-04-18 |
Family
ID=24353056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/018153 WO2001095389A2 (en) | 2000-06-06 | 2001-06-05 | Shielding of analog circuits on semiconductor substrates |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1287554A2 (en) |
KR (1) | KR20030007881A (en) |
WO (1) | WO2001095389A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080001262A1 (en) * | 2006-06-29 | 2008-01-03 | Telesphor Kamgaing | Silicon level solution for mitigation of substrate noise |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60105265A (en) * | 1983-11-11 | 1985-06-10 | Toshiba Corp | Manufacture of complementary type semiconductor device |
EP0178649A2 (en) * | 1984-10-17 | 1986-04-23 | Hitachi, Ltd. | Complementary semiconductor device |
US4926233A (en) * | 1988-06-29 | 1990-05-15 | Texas Instruments Incorporated | Merged trench bipolar-CMOS transistor fabrication process |
JPH03222455A (en) * | 1990-01-29 | 1991-10-01 | Matsushita Electron Corp | Semiconductor device |
JPH07273184A (en) * | 1994-04-01 | 1995-10-20 | Mitsubishi Electric Corp | Semiconductor device and its fabrication |
EP0817268A1 (en) * | 1996-06-27 | 1998-01-07 | Nec Corporation | Semiconductor integrated circuit device with digital circuit and analog circuit on common substrate and fabrication process therefor |
US5793093A (en) * | 1997-03-11 | 1998-08-11 | Lucent Technologies Inc. | Substrate isolation for analog/digital IC chips |
JPH11233616A (en) * | 1998-02-17 | 1999-08-27 | Toshiba Corp | Semiconductor device and its manufacturing method |
US6051868A (en) * | 1996-11-15 | 2000-04-18 | Nec Corporation | Semiconductor device |
-
2001
- 2001-06-05 KR KR1020027016589A patent/KR20030007881A/en not_active Application Discontinuation
- 2001-06-05 EP EP01946084A patent/EP1287554A2/en not_active Withdrawn
- 2001-06-05 WO PCT/US2001/018153 patent/WO2001095389A2/en not_active Application Discontinuation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60105265A (en) * | 1983-11-11 | 1985-06-10 | Toshiba Corp | Manufacture of complementary type semiconductor device |
EP0178649A2 (en) * | 1984-10-17 | 1986-04-23 | Hitachi, Ltd. | Complementary semiconductor device |
US4926233A (en) * | 1988-06-29 | 1990-05-15 | Texas Instruments Incorporated | Merged trench bipolar-CMOS transistor fabrication process |
JPH03222455A (en) * | 1990-01-29 | 1991-10-01 | Matsushita Electron Corp | Semiconductor device |
JPH07273184A (en) * | 1994-04-01 | 1995-10-20 | Mitsubishi Electric Corp | Semiconductor device and its fabrication |
EP0817268A1 (en) * | 1996-06-27 | 1998-01-07 | Nec Corporation | Semiconductor integrated circuit device with digital circuit and analog circuit on common substrate and fabrication process therefor |
US6051868A (en) * | 1996-11-15 | 2000-04-18 | Nec Corporation | Semiconductor device |
US5793093A (en) * | 1997-03-11 | 1998-08-11 | Lucent Technologies Inc. | Substrate isolation for analog/digital IC chips |
JPH11233616A (en) * | 1998-02-17 | 1999-08-27 | Toshiba Corp | Semiconductor device and its manufacturing method |
Non-Patent Citations (4)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 009, no. 255 (E - 349) 12 October 1985 (1985-10-12) * |
PATENT ABSTRACTS OF JAPAN vol. 015, no. 506 (E - 1148) 20 December 1991 (1991-12-20) * |
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 02 29 February 1996 (1996-02-29) * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13 30 November 1999 (1999-11-30) * |
Also Published As
Publication number | Publication date |
---|---|
WO2001095389A2 (en) | 2001-12-13 |
KR20030007881A (en) | 2003-01-23 |
EP1287554A2 (en) | 2003-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW334590B (en) | Semiconductor device and its manufacture | |
WO2002054495A3 (en) | Metal oxynitrides on monocrystalline substrates | |
EP1168455A3 (en) | Power semiconductor switching element | |
EP1033759A3 (en) | MOS-gated device having a buried gate and process for forming same | |
TW200507267A (en) | Semiconductor diode with reduced leakage | |
MY127799A (en) | Soi device with reduced junction capacitance. | |
EP1253645A3 (en) | Lateral transistor having graded base region, semiconductor intergrated circuit and fabrication method thereof | |
EP1052690A3 (en) | Process or forming MOS-gated devices having self-aligned trenches | |
TW354430B (en) | Photodiode and method for fabricating the same | |
TW334576B (en) | Semiconductor device and method for making a semiconductor device | |
TW200608512A (en) | Semiconductor device | |
WO2005048318A3 (en) | Nitride metal oxide semiconductor integrated transistor devices | |
TW200509359A (en) | Electrostatic discharge protection circuit, semiconductor circuit and fabrication thereof | |
EP1148543A3 (en) | Semiconductor device and process of manufacturing the same | |
KR970077166A (en) | Method for forming a triple well in a semiconductor substrate | |
KR980006136A (en) | Integrated circuits and their manufacturing processes | |
SE9900446L (en) | Semiconductor device with deep substrate contacts | |
WO2003085722A3 (en) | Field effect transistor having a lateral depletion structure | |
WO2003049191A3 (en) | Bicmos structure, method for producing the same and bipolar transistor for a bicmos structure | |
EP0311354A3 (en) | Integrated circuits comprising insulating regions | |
EP0822596A3 (en) | Improvements in or relating to integrated circuits | |
IE822570L (en) | Semiconductor device and method of manufacturing the same | |
WO2001095389A3 (en) | Shielding of analog circuits on semiconductor substrates | |
WO2001099186A3 (en) | Shielding of analog circuits on semiconductor substrates | |
KR970067916A (en) | Low stress photodiode with low junction leakage |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP KR |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): JP KR |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001946084 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027016589 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027016589 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2001946084 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2001946084 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: JP |