WO2001084099A1 - Module de detection et son procede de fabrication - Google Patents

Module de detection et son procede de fabrication Download PDF

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Publication number
WO2001084099A1
WO2001084099A1 PCT/IB2001/000639 IB0100639W WO0184099A1 WO 2001084099 A1 WO2001084099 A1 WO 2001084099A1 IB 0100639 W IB0100639 W IB 0100639W WO 0184099 A1 WO0184099 A1 WO 0184099A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
sensor module
conducting element
semiconductor substrate
temperature difference
Prior art date
Application number
PCT/IB2001/000639
Other languages
German (de)
English (en)
Inventor
Felix Mayer
Ralph Steiner Vanha
Original Assignee
Sensirion Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensirion Ag filed Critical Sensirion Ag
Priority to AU2001248676A priority Critical patent/AU2001248676A1/en
Priority to DE10191688T priority patent/DE10191688B4/de
Publication of WO2001084099A1 publication Critical patent/WO2001084099A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6847—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow where sensing or heating elements are not disturbing the fluid flow, e.g. elements mounted outside the flow duct

Definitions

  • the invention relates to a sensor module, a method for its production and a flow sensor according to the preamble of the independent claims.
  • thermopile can be integrated on the semiconductor substrate, which emits a voltage depending on the temperature difference between its contact rows.
  • the task therefore is to provide a sensor module that avoids these problems.
  • a heat-conducting element is therefore provided which is in thermal contact with the temperature difference sensor and via which the sensor module is connected to the object to be measured. This allows the temperature to be guided from the object to be measured to the location of the temperature difference sensor (s). The actual measuring points and the sensor module can thus be separated locally. Nevertheless, the advantageous properties, such as low susceptibility to faults, of a sensor module with integrated temperature difference sensor.
  • the heat-conducting element is preferably partially cast into a housing, which also encloses the semiconductor substrate, so that a mechanically stable structure results.
  • the temperature difference sensor is preferably a thermopile, the contact rows or ends of which are thermally connected to the heat-conducting element or elements. Since such a thermopile has a high electrical internal resistance, its integration on a semiconductor module can reduce the sensitivity to interference in comparison to a structure made up of discrete parts.
  • the semiconductor substrate has a depression or opening between the points to which the heat-conducting element or elements are connected. This reduces the heat flow through the substrate and improves the sensitivity of the sensor.
  • the recess or opening can be ner membrane, so that it remains possible to draw direct lines between the contact locations.
  • the heat flow through the semiconductor substrate can also be reduced by choosing its thickness to be very small.
  • the above-mentioned deepening e.g. are brought up to less than 200 ⁇ m to the opposite side of the substrate, or the substrate can generally have a thickness of less than 200 ⁇ m.
  • a heat source can also be integrated on the semiconductor substrate. This can also be connected to a suitable heat-conducting element, referred to in the claims as the heat-output guide element, in order to conduct the heat to the object to be measured.
  • Evaluation electronics are preferably integrated on the semiconductor substrate. Thanks to the short cable routes to the temperature difference sensor, a very precise and trouble-free measurement can be achieved.
  • the temperature difference sensor is first integrated on the semiconductor substrate. Then it can be connected to the heat-conducting element or elements. This is preferably done in a lead frame. In this case, the heat-conducting element and connecting lines are formed in the lead frame, then connected to the semiconductor substrate and cast into a common housing using known technology.
  • the sensor module is particularly suitable for use in a flow sensor.
  • 1 is a plan view of a semiconductor substrate with a thermopile and evaluation electronics
  • 2 shows the semiconductor substrate according to FIG. 1 with metal bumps
  • FIG. 3 shows the semiconductor substrate according to FIG. 2 with connecting lines and heat-conducting elements
  • FIG. 4 shows the module according to FIG. 3 in a housing
  • Fig. 5 shows a section along line V-V of
  • FIG. 6 shows an enlarged detail from FIG. 5
  • FIG. 7 shows an alternative embodiment to FIG. 4,
  • FIG. 9 shows a fourth embodiment of the sensor component
  • FIG. 10 shows a fifth embodiment of the sensor component
  • FIG. 11 shows an embodiment of the sensor module as a flow sensor
  • FIG. 12 shows a plan view of the sensor module according to FIG. 11,
  • FIG. 14 shows a third embodiment of a flow sensor and FIG. 15 shows a fourth embodiment of a flow sensor.
  • FIG. 1 A first embodiment of the invention in various stages of its manufacturing process is shown in Figs. 1-6.
  • This is a sensor module that is based on a semiconductor substrate 1, as shown in FIG. 1.
  • a thermal acid le 2 integrated on the semiconductor substrate 1, a thermal acid le 2 integrated.
  • This has two contact rows 3, 4, which form their thermal contact locations, and generates a voltage depending on the temperature difference between these two contact rows.
  • the thermopile is connected to evaluation electronics 6 via conductor 5.
  • the evaluation electronics 6 comprise, for example, a preamplifier, an analog-digital converter and a digital processing stage, for example in order to linearize and scale the signal from the thermopile.
  • Connection pads 7 are provided for the electrical connection to the outside world.
  • metal bumps 8 9, 9 are applied to the finished semiconductor substrate 1. These are bumps made of metal, preferably of gold or copper, which lie over the contact rows 3, 4 and make thermal contact with them form.
  • the semiconductor substrate 1 is connected to electrical connecting lines 10 and heat-conducting elements 11, 12.
  • the connecting lines 10 contact the connecting pads 7 and represent the electrical connections of the module.
  • the heat-conducting elements 11, 12 are made of metal with a high thermal conductivity, are in thermal and preferably also physical contact with the metal pumps 8, 9 and provide the thermal connections.
  • the connecting lines 10 and the heat-conducting elements 11, 12 are preferably arranged together in a lead frame, so that they can be connected in one step to the semiconductor substrate 1 in the manner shown in FIG. 3.
  • the arrangement according to FIG. 3 is cast into a plastic housing 14, as shown in FIG. 4.
  • a first part of the heat-conducting elements 11, 12 is poured into the housing, while a second part forms a connecting tongue 11a or 12a.
  • these are equipped with screw holes 16.
  • the housing 14 provides the heat conducting elements 11, 12 with mechanical support.
  • the finished module according to FIG. 4 enables a temperature difference between the connecting tongues 11a and 12a to be detected.
  • the connecting tongues are thermally connected to two measuring points of an object to be measured. A temperature difference between these measuring points creates a temperature difference across the contact rows 3, 4 of the thermopile and thus a measurable voltage.
  • the voltage dropping across the contact rows 3, 4 is dependent on the thermal conductivity of the heat-conducting elements 11, 12 and the thermal conductivity of substrate 1 and housing 14. While the housing is made of plastic and has low thermal conductivity, the thermal conductivity of substrate 1 is relatively high , Therefore, a depression or a continuous opening is preferably provided in the substrate 1 between the contact rows 3, 4.
  • FIG. 5 This is shown in FIG. 5.
  • an opening 20 extending through the substrate is provided between the contact rows 3, 4 and a thin membrane 21 extends over the opening.
  • a structure can be produced by first coating the substrate with the membrane 21 and then etching out the opening 20. Appropriate techniques are known to the person skilled in the art.
  • a depression can also be etched out from the underside of the substrate, which is covered at the top by a substrate layer with a thickness of at most 200 ⁇ m, preferably approximately 50 ⁇ m.
  • thermopile 2 forms a contact point in the region of the contact row. They are covered by a passivation layer 24, for example made of silicon nitride, on which the metal bump 8 or 9 is applied.
  • the embodiment of the invention shown in FIG. 4 can be connected via the screw holes 16 to an object to be measured or to suitable heat conductors.
  • FIG. 7 shows a tapered design of the connecting tongues 11a, 12a, as is e.g. would be suitable for a handheld meter.
  • FIG. 8 Another embodiment is shown in FIG. 8.
  • the heat-conducting elements protrude laterally from the housing 14, their first part enclosed by the housing 14 being shown in dashed lines.
  • FIG. 9 A further embodiment according to FIG. 9 for large temperature differences is constructed like that according to FIG. 8, but the two heat-conducting elements are connected to one another, so that a single heat-conducting element 12 'is produced. There is therefore a common heat-conducting element for both contact rows 3, 4 of the thermopile 2, which has lateral connecting tongues 12'a, 12b. In the area 12 'c between the contact rows 3, 4, the heat-conducting element 12 ⁇ has a smaller cross section than in the area of the connecting tongues 12'a, 12 b, so that the thermal resistance per length between the contact rows 3, 4 is greater than in the connecting tongues. This increases the temperature drop between the contact rows 3, 4.
  • the sensor module has been cast into a housing 14 and the heat-conducting elements protrude from this housing. It is also conceivable that the heat-conducting elements only lead to the surface of the housing if the measurement is to be carried out directly on the housing.
  • FIG. 10 Another embodiment is shown in FIG. 10.
  • the semiconductor substrate 1 is fastened directly to a line or a pipe 25 via the heat-conducting elements 11, 12.
  • the heat-conducting elements 11, 12 can e.g. are formed from the above-mentioned metal bumps. With this arrangement it is possible to determine a temperature gradient in the medium flowing in the pipe 25. Nevertheless, the semiconductor substrate 1 is well protected from the medium.
  • FIG. 11 A similar embodiment of the sensor module is shown in FIG. 11.
  • a heat source 26 e.g. in the form of an integrated resistor.
  • a heat output guide element 27 is arranged on the heat source 26 and is in thermal contact with it.
  • the heating power guide element 27 can also be designed as a metal bump. It transfers the heat of the heat source 26 to the pipe 25, where it generates a temperature gradient in the medium to be measured between the heat-conducting elements 11, 12.
  • thermopiles 2a, 2b between which the heat source 26 is arranged.
  • the inner rows of contacts of the thermopiles 2a, 2b lie next to the heat source, the outer ones at the edge of the semiconductor substrate 1.
  • thermopiles 2a or 2b In order to increase the sensitivity of each thermopile 2a or 2b, suitable depressions or openings can again be provided between their contact rows, as shown in FIG. 5. Likewise, such depressions or openings can be provided between the inner rows of contacts and the heat source 26 to separate the heat source 26 from the thermopiles 2a, 2b.
  • the evaluation electronics 6 is designed to operate the heat source with constant current, constant temperature or constant voltage and contains the switching elements necessary for this. It also measures the difference ⁇ in the temperature differences across the thermopiles 2a, 2b. Since the middle contact rows of the thermopiles 2a, 2b are essentially at the same temperature, the difference ⁇ essentially corresponds to the temperature difference at the outer contact rows.
  • an asymmetry in the heat distribution generated by the heat source 26 can thus be measured, from which the flow velocity of the medium in the pipe 25 can be determined via suitable calibration.
  • Corresponding measurement techniques are known to the person skilled in the art.
  • the heat source 26 does not necessarily have to be integrated on the semiconductor substrate 1. It can also be arranged externally, as shown in the explanations according to FIGS. 13 and 14.
  • the heat source is designed as a resistive winding 26 ′ which is wound around the tube 25 between the heat-conducting elements 11, 12. It is also conceivable, in addition or as an alternative to the winding 26 ′, to provide a winding 26 ′′ between the heat-conducting elements 11, 12 in front of the heat-conducting elements 11, 12.
  • the tube 25 is bent to provide more space for the winding 26 ⁇ .
  • the winding 26 * can also be arranged at the apex of the U-shaped tube or extend both over the apex and the two legs.
  • the control circuits for operating the heat sources of the embodiments according to FIGS. 13 and 14 can be integrated on the semiconductor substrate 1, whereby a Power driver can optionally be provided as an external component.
  • a heat source is integrated on the semiconductor substrate 1 and is connected to the apex of the tube 25 via a heating power guide element 27.
  • the temperature difference can also be measured by a single thermopile.
  • thermopiles are provided as temperature difference sensors.
  • simple thermocouples can also be used.
  • the use of other sensors is also possible, e.g. of PTC resistors.
  • thermopiles are preferred because they allow temperature differences in the mK range to be resolved and measured essentially without drift and aging effects.

Landscapes

  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Measuring Volume Flow (AREA)

Abstract

Une colonne thermométrique (2) et une unité électronique de détection (6) sont placées un substrat semi-conducteur. Deux parties métalliques en relief (8, 9) sont installées sur les rangées de contacts de la colonne thermométrique, auxquelles lesdites parties sont reliées thermiquement. Ces parties peuvent être reliées au moyen de lames de connexion, de sorte qu'une variation de température peut être mesurée à l'extérieur du substrat semi-conducteur (1). Etant donné que l'unité électronique de détection se trouve sur le même substrat que la colonne thermométrique, des variations de température peuvent ainsi être mesurées avec une plus grande précision et une plus faible sensibilité aux parasites.
PCT/IB2001/000639 2000-05-04 2001-04-20 Module de detection et son procede de fabrication WO2001084099A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2001248676A AU2001248676A1 (en) 2000-05-04 2001-04-20 Sensor module and a method for the production of the same
DE10191688T DE10191688B4 (de) 2000-05-04 2001-04-20 Sensorbaustein und ein Verfahren zu dessen Herstellung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH8712000 2000-05-04
CH871/00 2000-05-04

Publications (1)

Publication Number Publication Date
WO2001084099A1 true WO2001084099A1 (fr) 2001-11-08

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PCT/IB2001/000639 WO2001084099A1 (fr) 2000-05-04 2001-04-20 Module de detection et son procede de fabrication

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AU (1) AU2001248676A1 (fr)
DE (1) DE10191688B4 (fr)
WO (1) WO2001084099A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1351039A1 (fr) 2002-04-03 2003-10-08 Sensirion AG Capteur de courant et méthode pour sa fabrication
EP1499860A1 (fr) * 2002-06-28 2005-01-26 Heetronix Debitmetre massique a capteurs du type puce
US7757553B2 (en) 2008-04-04 2010-07-20 Sensirion Ag Flow detector with a housing
EP2302327A1 (fr) 2009-09-25 2011-03-30 Nxp B.V. Capteur
US9284187B2 (en) 2011-02-22 2016-03-15 Ams International Ag Integrated circuit with sensor and method of manufacturing such an integrated circuit

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012209225A1 (de) * 2012-05-31 2013-12-05 Ifm Electronic Gmbh Thermischer Strömungssensor
DE102012105534A1 (de) * 2012-06-25 2014-01-02 Sumida Flexible Connections Gmbh Vorrichtung zur Erfassung der Temperatur in einem Raum und ein Verfahren zur Herstellung einer solchen Vorrichtung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881181A (en) * 1973-02-22 1975-04-29 Rca Corp Semiconductor temperature sensor
US4587843A (en) * 1983-06-23 1986-05-13 Nippon Soken, Inc. Thermocouple-type gas-flow measuring apparatus
DE4241333A1 (en) * 1991-12-09 1993-06-17 Mitsubishi Electric Corp Semiconductor sensor for flow meter - contains semiconducting chip with sensor element contg. flow detector element with heating and temp. sensitive elements.
US5228329A (en) * 1991-12-27 1993-07-20 Conservation Devices, Inc. Leak detector for fluid distribution systems serving intermittent loads
DE19527861A1 (de) * 1995-07-29 1997-01-30 Bosch Gmbh Robert Massenflußsensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19516480C1 (de) * 1995-05-05 1996-09-05 Inst Physikalische Hochtech Ev Mikrosensor zur Bestimmung von Wärmestromdichten und Wärmedurchgangszahlen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881181A (en) * 1973-02-22 1975-04-29 Rca Corp Semiconductor temperature sensor
US4587843A (en) * 1983-06-23 1986-05-13 Nippon Soken, Inc. Thermocouple-type gas-flow measuring apparatus
DE4241333A1 (en) * 1991-12-09 1993-06-17 Mitsubishi Electric Corp Semiconductor sensor for flow meter - contains semiconducting chip with sensor element contg. flow detector element with heating and temp. sensitive elements.
US5228329A (en) * 1991-12-27 1993-07-20 Conservation Devices, Inc. Leak detector for fluid distribution systems serving intermittent loads
DE19527861A1 (de) * 1995-07-29 1997-01-30 Bosch Gmbh Robert Massenflußsensor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NAJAFI K: "SILICON INTEGRATED MICROSENSORS", PROCEEDINGS OF THE CONFERENCE ON INTEGRATED OPTICS AND MICROSTRUCTURES,US,BELLINGHAM, SPIE, vol. CONF. 1, 8 September 1992 (1992-09-08), pages 235 - 246, XP000700816, ISBN: 0-8194-0972-3 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1351039A1 (fr) 2002-04-03 2003-10-08 Sensirion AG Capteur de courant et méthode pour sa fabrication
EP1499860A1 (fr) * 2002-06-28 2005-01-26 Heetronix Debitmetre massique a capteurs du type puce
EP1499860A4 (fr) * 2002-06-28 2007-05-30 Heetronix Debitmetre massique a capteurs du type puce
US7757553B2 (en) 2008-04-04 2010-07-20 Sensirion Ag Flow detector with a housing
EP2302327A1 (fr) 2009-09-25 2011-03-30 Nxp B.V. Capteur
US9546884B2 (en) 2009-09-25 2017-01-17 Nxp B.V. Sensor
US9284187B2 (en) 2011-02-22 2016-03-15 Ams International Ag Integrated circuit with sensor and method of manufacturing such an integrated circuit
US9941222B2 (en) 2011-02-22 2018-04-10 Ams International Ag Integrated circuit with sensor and method of manufacturing such an integrated circuit

Also Published As

Publication number Publication date
DE10191688D2 (de) 2003-07-10
DE10191688B4 (de) 2010-09-16
AU2001248676A1 (en) 2001-11-12

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