WO2001060940A1 - Biocides pour pates de polissage - Google Patents

Biocides pour pates de polissage Download PDF

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Publication number
WO2001060940A1
WO2001060940A1 PCT/US2001/003381 US0103381W WO0160940A1 WO 2001060940 A1 WO2001060940 A1 WO 2001060940A1 US 0103381 W US0103381 W US 0103381W WO 0160940 A1 WO0160940 A1 WO 0160940A1
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WO
WIPO (PCT)
Prior art keywords
biocide
methyl
isothiazolin
slurry
polishing
Prior art date
Application number
PCT/US2001/003381
Other languages
English (en)
Inventor
Inc. Rodel Holdings
Qiuliang Luo
Wendy B. Goldberg
Qianqiu Ye, (Christine)
Original Assignee
Rodel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Inc filed Critical Rodel Inc
Publication of WO2001060940A1 publication Critical patent/WO2001060940A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Definitions

  • This invention relates to the protection of polishing slurries and silica dispersions from the proliferation of bacteria and/or fungi by means of biocides.
  • the problem of bacterial and fungal growth in silica polishing slurries is addressed in USP5,230,833 (Romberger et al.). It includes a thorough summary of the early related art.
  • Bactericides disclosed in '833 are tetramethylammonium chloride, tetraethylammonium chloride, tetrapropylammonium chloride, alkylbenzyldimethylammonium chloride, and alkylbenzyldimethylammonium hydroxide, wherein the alkyl chaim ranges from 1 to about 20 carbon atoms.
  • the preferred biocide is sodium chlorite or sodium hypochlorite.
  • the preferred fungicide is sodium OMADINE® (pyrithone).
  • USP3,377,275 discloses a synergistic blend of 3,5-di-methyl tetrahydro 1,3,5,2H- thiadiazine-2-thione in combination with formaldehyde as a microbiocide for aqueous colloidal silica sols.
  • a five membered organic ring compound containing both a sulfur and a nitrogen in the ring provide biocide protection of CMP slurries without affecting polishing performance.
  • examples of such compounds are 5-chloro-2-methyl-4- isothiazolin-3-one and 2-methyl-4-isothiazolin-3-one.
  • biocides which do not significantly affect the polishing performance of both particle-free solutions for use with fixed abrasive pads and slurries comprising metal oxide abrasives such as alumina, ceria, zirconia, and silica. These biocides comprise a five-membered organic ring compound containing both a sulfur and a nitrogen in the ring.
  • a chemical polishing solution for use with a fixed abrasive pad was made up with the following components: ammonium hydrogen phosphate, iminodiacetic acid, 5-methyl- lH-benzotriazole, surfactant, and hydrogen peroxide. Removal rates were determined using a Strasbaugh 6DS-SP Planarizer and a 3M fixed abrasive matrix MRW64 pad. The process was fixed at 4psi downforce, 60rpm platen speed, and 40rpm carrier speed.
  • Biocide 1 (Kathon CGICP II available from Rohn and Haas Company, Philadelphia, PA) and Biocide 2 (Neolone M50 available from Rohm and Haas Company, Philadelphia, PA) were added at a concentration of 0.15% by weight to solution batches.
  • the active ingredients in these biocides are 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4- isothiazolin-3-one. Results of polishing patterned wafers are shown in Table 1.
  • a polishing slurry comprising as major components iodic acid, lactic acid, potassium hydrogen phthalate, and metal oxide abrasive (a mixture of alumina and titania) was made up as slurry A. To a portion of this slurry was added 0.10% by weight of Kathon® CGICP biocide (active ingredients 2-methyl-4-isothiazolin-3-one and 5-chloro- 2-methyl-4-isothiazolin-3-one). This slurry was designated slurry B.
  • Wafers comprising tungsten (W), titanium (Ti), and silicon dioxide (Ox) were polished on a standard CMP polishing machine using slurry A and slurry B. Results of the polishing are shown in Table 3.
  • a CMP slurry was made up with the following major components: Klebosol 1498- 50 (silica sol), citric acid (complexing agent), benzotriazol (corrosion inhibitor), and a surfactant. Addition of a small amount (about 0.1%) of Neolone® (available from Rohm and Haas Company) gave adequate biocide protection to the CMP slurry while the slurry provided slightly improved surface quality when the slurry was used as a second step slurry for polishing semiconductor wafers comprising copper.
  • biocide comprised of 2- methyl-4-isothiazolin-3-one and/or 5-chloro-2-methyl-4-isothiazolin-3-one in an amount sufficient to provide antibacterial and antifungal protection to the slurry does not adversely affect the polishing performance of a slurry. It performs particularly well on slurries which comprise Klebosol® silica sol as an ingredient.
  • a sufficient amount of biocide is in the range of 0.01% to 1% by weight of the CMP solution or slurry.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)

Abstract

L'invention concerne des composés contenant à la fois du soufre et de l'azote dans une structure de noyau à cinq chaînons, utilisés comme biocides dans des solutions et des pâtes de polissage.
PCT/US2001/003381 2000-02-16 2001-02-02 Biocides pour pates de polissage WO2001060940A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18296000P 2000-02-16 2000-02-16
US60/182,96020000216 2000-02-16

Publications (1)

Publication Number Publication Date
WO2001060940A1 true WO2001060940A1 (fr) 2001-08-23

Family

ID=22670800

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/003381 WO2001060940A1 (fr) 2000-02-16 2001-02-02 Biocides pour pates de polissage

Country Status (2)

Country Link
US (1) US20020025762A1 (fr)
WO (1) WO2001060940A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2093789A3 (fr) * 2008-02-22 2010-01-27 Rohm and Haas Electronic Materials CMP Holdings, Inc. Polissage de tranches à motifs contenant du cuivre

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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JP4435391B2 (ja) * 2000-08-04 2010-03-17 扶桑化学工業株式会社 コロイド状シリカスラリー
KR101005304B1 (ko) * 2002-03-25 2011-01-05 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 탄탈 배리어 제거 용액
JP2003313542A (ja) * 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
KR101395542B1 (ko) * 2006-05-02 2014-05-14 캐보트 마이크로일렉트로닉스 코포레이션 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법
US7501346B2 (en) * 2006-07-21 2009-03-10 Cabot Microelectronics Corporation Gallium and chromium ions for oxide rate enhancement
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US10217645B2 (en) 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
US10109493B2 (en) 2015-01-12 2018-10-23 Versum Materials Us, Llc Composite abrasive particles for chemical mechanical planarization composition and method of use thereof
US9978609B2 (en) 2015-04-27 2018-05-22 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization
US10032644B2 (en) 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
US10144850B2 (en) 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
US10421890B2 (en) 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
US10745589B2 (en) 2016-06-16 2020-08-18 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US20190127607A1 (en) 2017-10-27 2019-05-02 Versum Materials Us, Llc Composite Particles, Method of Refining and Use Thereof
US11560533B2 (en) 2018-06-26 2023-01-24 Versum Materials Us, Llc Post chemical mechanical planarization (CMP) cleaning
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
US11608451B2 (en) * 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
WO2022047053A1 (fr) 2020-08-28 2022-03-03 Versum Materials Us, Llc Nettoyage post-planarisation mécano-chimique (cmp)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166611A2 (fr) * 1984-06-27 1986-01-02 Rohm And Haas Company Stabilisation de solutions aqueuses de 5-chloro-3-isothiazolones
US4752628A (en) * 1987-05-15 1988-06-21 Nalco Chemical Company Concentrated lapping slurries
US4857442A (en) * 1985-10-19 1989-08-15 Fuji Photo Film Co., Ltd. Method for the processing of silver halide color photographic materials
EP0342852A1 (fr) * 1988-05-16 1989-11-23 Rohm And Haas Company Stabilisants organiques
EP0398795A2 (fr) * 1989-05-17 1990-11-22 Katayama Chemical, Inc. Formulation aqueuse d'isothiazolone
EP0492593A1 (fr) * 1990-12-28 1992-07-01 Bromine Compounds Ltd. Améliorations dans les formulations d'isothiazolinons stabilisées
US5306725A (en) * 1989-03-01 1994-04-26 Katayama Chemical Inc. Stabilized isothiazolone liquid formulation
US5445670A (en) * 1994-06-08 1995-08-29 Blue Coral, Inc. Abrasive-containing surface-finish composition
WO1999015311A1 (fr) * 1997-09-19 1999-04-01 Minnesota Mining And Manufacturing Company Articles abrasifs contenant un agent fluorochimique servant a rectifier la surface de tranches de silicium

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166611A2 (fr) * 1984-06-27 1986-01-02 Rohm And Haas Company Stabilisation de solutions aqueuses de 5-chloro-3-isothiazolones
US4857442A (en) * 1985-10-19 1989-08-15 Fuji Photo Film Co., Ltd. Method for the processing of silver halide color photographic materials
US4752628A (en) * 1987-05-15 1988-06-21 Nalco Chemical Company Concentrated lapping slurries
EP0342852A1 (fr) * 1988-05-16 1989-11-23 Rohm And Haas Company Stabilisants organiques
US5306725A (en) * 1989-03-01 1994-04-26 Katayama Chemical Inc. Stabilized isothiazolone liquid formulation
EP0398795A2 (fr) * 1989-05-17 1990-11-22 Katayama Chemical, Inc. Formulation aqueuse d'isothiazolone
EP0492593A1 (fr) * 1990-12-28 1992-07-01 Bromine Compounds Ltd. Améliorations dans les formulations d'isothiazolinons stabilisées
US5445670A (en) * 1994-06-08 1995-08-29 Blue Coral, Inc. Abrasive-containing surface-finish composition
WO1999015311A1 (fr) * 1997-09-19 1999-04-01 Minnesota Mining And Manufacturing Company Articles abrasifs contenant un agent fluorochimique servant a rectifier la surface de tranches de silicium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2093789A3 (fr) * 2008-02-22 2010-01-27 Rohm and Haas Electronic Materials CMP Holdings, Inc. Polissage de tranches à motifs contenant du cuivre
KR101560648B1 (ko) 2008-02-22 2015-10-16 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 구리를 포함하는 패턴화된 웨이퍼의 연마

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Publication number Publication date
US20020025762A1 (en) 2002-02-28

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