WO2001059812A2 - Ensemble comprenant de nombreux produits dotes chacun d'un composant electronique reglable, ainsi qu'ensemble de dispositifs comprenant chacun un produit de ce type - Google Patents
Ensemble comprenant de nombreux produits dotes chacun d'un composant electronique reglable, ainsi qu'ensemble de dispositifs comprenant chacun un produit de ce type Download PDFInfo
- Publication number
- WO2001059812A2 WO2001059812A2 PCT/DE2001/000503 DE0100503W WO0159812A2 WO 2001059812 A2 WO2001059812 A2 WO 2001059812A2 DE 0100503 W DE0100503 W DE 0100503W WO 0159812 A2 WO0159812 A2 WO 0159812A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- memory
- product
- electrical signal
- set according
- Prior art date
Links
- 239000010409 thin film Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003679 aging effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J1/00—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general
- H03J1/0008—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
- H03J5/02—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with variable tuning element having a number of predetermined settings and adjustable to a desired one of these settings
- H03J5/0245—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form
- H03J5/0254—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form the digital values being transfered to a D/A converter
- H03J5/0263—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form the digital values being transfered to a D/A converter the digital values being held in an auxiliary non erasable memory
Definitions
- a set comprising many products, each with a tunable electronic component, and a set of arrangements, each comprising such a product
- the invention relates to a set comprising a large number of products, each of which has an electronic component which has a parameter which can be changed by coordinating the respective component with an electrical signal.
- the invention relates to a set comprising many arrangements, each comprising such a product.
- the component is an acoustic thin-film volume resonator.
- This comprises a piezoelectric thin film, consisting in particular of zinc oxide and having a thickness on the order of a few micrometers.
- the thin film is enclosed between two electrodes, via which it can be acted upon by a high-frequency electrical signal, the frequency of which is of the order of 1 GHz.
- the combination of electrodes and thin film is arranged on an insulating membrane, which consists in particular of silicon nitride, and this membrane is on one
- This substrate can be silicon.
- a determination variable of an individual electronic component in particular an electromechanical resonator, can be changed by tuning with an electrical signal. This vote will be corrected by
- the values of an amplitude of the correction signal necessary for correcting the individual component are contained in a memory assigned to the component.
- an FBAR can in principle be changed, in particular by tuning the FBAR with a DC voltage applied to the aforementioned electrodes or special tuning electrodes. This coordination can serve in particular to correct disruptive influences from the surroundings of the product, in particular a temperature fluctuation.
- an FBAR can be arranged on a substrate made of silicon, on which yet another component, which can be interconnected with the FBAR, can be formed.
- An acoustic thin film bulk resonator also referred to in technical terms as a "thin film bulk acoustic resonator” and commonly abbreviated "FBAR" is being considered as a filter for use in a mobile communication device.
- the basic suitability is, however, a disadvantage that the production of the required thin film has so far only been possible with a comparatively high tolerance with regard to the thickness that can be achieved, although the thickness essentially determines the resonance frequency of the resonator.
- the currently achievable tolerance does not allow the thin film to be reproduced as part of a large series production in such a way that a tolerance with respect to the resonance frequency of the order of one per thousand is achieved. This is however, a necessary prerequisite for the use of corresponding products in the context of large series production of mobile communication devices.
- the invention has for its object to provide a set of the type mentioned, which makes it possible to provide the associated electronic components, each of which can in particular be an FBAR, in a manner suitable for further use in the context of a large series.
- One sentence should also include many
- Arrangements each of which is a product with an electronic component, which can in particular be an FBAR.
- the arrangements of the set can continue to be used as part of a large series.
- a set comprising a large number of products, each of which has a respective electronic component, the respective component having a parameter which can be changed by coordinating the respective component with a respective electrical signal, with a) each product corresponding to the respective one Has component-associated respective memory, in which a value of an amplitude of the respective electrical signal is stored, and b) the determinants of all products are the same when each product has the respective component with a respective electrical signal with the respective amplitude stored in the respective memory is coordinated.
- a set comprising a large number of arrangements, each of which has a respective product with a respective electronic component, the respective component being a
- Determination size which by voting the each component can be changed with a respective electrical signal
- each arrangement has a respective memory associated with the respective component, in which a value of an amplitude of the respective electrical signal is stored, and a respective control circuit connected to the respective component and the respective memory Formation of a respective electrical signal fed to the respective component, which has the respective amplitude stored in the respective memory, and b) the determinants of all products are identical to one another, if in each product the respective component with a respective electrical signal with that in the respective Memory stored respective amplitude is matched.
- each tunable electronic component in the set of products or arrangements is therefore provided with information by means of which the product can be individually tuned.
- This information is stored in a memory, in particular digital, assigned to the product.
- this information can be read out from the memory and used to coordinate the product, possibly taking into account further specific requirements.
- the information is stored in the memory in digital form and is fed to an analog-to-digital converter, which supplies a voltage that corresponds to the information, is proportional to a predetermined, in particular standardized, nominal voltage and to the component for the purpose of tuning in such a way that the determination variable is theirs predetermined value is reached, is supplied.
- the invention contributes to the fact that the tolerance with which all electronic components of an entire set each reach a predetermined value for their intended size in the intended operation, is at least within a certain limit independent of the tolerance with which the electronic components within the set are manufactured.
- Each product of a given set is accompanied by the information which is necessary in order to coordinate the component of the product for its intended operation. This takes place in particular in that each product is measured accordingly in the course of production and the information obtained in this way is stored in the memory.
- Each component is preferably a resonator, more preferably a mechanical vibrator, and further preferably an acoustic thin-film volume resonator (FBAR).
- FBAR acoustic thin-film volume resonator
- Each memory is preferably a PROM memory of conventional design; it can be of relatively simple design, since with a commonly required precision of in particular one per thousand, it hardly requires more than 10 bits of storage space.
- Each component and the associated memory are preferably arranged on a common substrate.
- the substrate can be a silicon chip, on which, for example, a membrane which carries the component can be attached and on which the memory is constructed using conventional semiconductor technology.
- the component and the memory are preferably also arranged in a common housing.
- the signal to be supplied to the component for the purpose of tuning is preferably an electrical direct voltage.
- each product can contain several components to which a single memory is assigned; this is possible if the components are selected so that they can be tuned as intended with the same electrical signal.
- a single memory can also contain values for several components.
- the inclusion of the component in an electrical high-frequency circuit preferably takes place in that a connection between the control circuit for tuning the component and the component itself is decoupled from the high-frequency circuit - for example by capacitors or coils in accordance with conventional high-frequency technology.
- Figure 1 is a sketched plan view of a product of a set as described above; and Figure 2 is a circuit representing an arrangement of a set as described above.
- the product according to FIG. 1 comprises an electronic one
- Component 1 which has a determination size that can be changed by tuning the component 1 with an electrical signal.
- the product has a memory 2 assigned to the component 1, in which a value of an amplitude of the electrical signal for tuning the
- Component 1 is stored.
- the product shown is to be regarded as representative of a sentence including one A large number of such products, it being desired that the determination size of the respective component 1 of each product has a predetermined value with a predetermined, relatively narrow tolerance. It is assumed that the process of making the set is achieving this
- Tolerance does not simply ensure that each component has a determinant for itself, in particular without an additional tuning measure, that is outside the specified tolerance.
- a value of an amplitude for the electrical signal to be applied for tuning the component 1 is ascertained for each component, which ensures that the quantity to be determined has the specified value within the specified tolerance. This value is stored in the memory 2 assigned to the component 1 and is available there so that it can be read by a suitable control circuit 5 (see FIG. 2) and used to tune the component 1.
- Component 1 is an acoustic thin film volume
- Resonator comprising a thin film a few micrometers thick made of a piezoelectric material, which can be set into acoustic vibrations by electrodes attached to it.
- Such an acoustic thin-film volume resonator is fundamentally particularly suitable for use as
- the component 1 and the memory 2 are arranged on a common substrate 3 and in a common housing 4 (indicated by dashed lines). Connections 7 of the component 1 and connections 8 of the memory 2 are led through the housing 4 to the outside.
- the component 1 is attached to a membrane 9, namely a thin layer of silicon nitride, and arranged over a recess 10 m in the substrate 3, so that it can vibrate as freely as possible.
- the substrate 3 consists of silicon; it can therefore be used to realize the memory of 2 m of common silicon semiconductor technology.
- the memory 2 does not have to contain any complex circuitry, because the m it needs to be stored
- the programming of the memory 2 can be carried out in particular by cutting conductors in this memory 2, for example by means of a laser.
- Figure 2 shows a circuit as a representative of a
- the component 1 forms part of an electrical high-frequency circuit 6, for example a receiver circuit in a mobile phone.
- the memory 2 is connected to a control circuit 5, in particular a digital-to-analog converter.
- the control circuit 5 generates a DC electrical voltage with which the component 1 is tuned.
- the connection between the control circuit 5 and the component 1 is decoupled from the high-frequency circuit, specifically by means of coils 11 and capacitors 12 in accordance with common high-frequency technology.
Abstract
La présente invention concerne un ensemble comprenant de nombreux produits dotés d'un composant électronique (1) présentant une grandeur fondamentale qui peut être modifiée par réglage du composant (1) au moyen d'un signal électrique. Ledit ensemble présente en supplément une mémoire (2) associée au composant (1), une valeur d'amplitude du signal électrique étant enregistrée dans ladite mémoire. Les grandeurs fondamentales des produits de l'ensemble sont identiques entre elles, lorsque, à l'intérieur de chaque produit, le composant respectif (1) est réglé par l'intermédiaire d'un signal électrique respectif dont l'amplitude a la valeur respective enregistrée dans la mémoire respective (2). Chaque dispositif de l'ensemble comprend un produit respectif de ce type ainsi qu'un circuit de commande (5) respectif relié respectivement au composant respectif (1) et à la mémoire respective (2), ledit circuit de commande servant à produire un signal électrique respectif alimentant le composant respectif (1), ledit signal ayant une amplitude de valeur respective enregistrée dans la mémoire respective.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10006232 | 2000-02-11 | ||
DE10006232.6 | 2000-02-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001059812A2 true WO2001059812A2 (fr) | 2001-08-16 |
WO2001059812A3 WO2001059812A3 (fr) | 2002-05-30 |
Family
ID=7630672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/000503 WO2001059812A2 (fr) | 2000-02-11 | 2001-02-09 | Ensemble comprenant de nombreux produits dotes chacun d'un composant electronique reglable, ainsi qu'ensemble de dispositifs comprenant chacun un produit de ce type |
Country Status (1)
Country | Link |
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WO (1) | WO2001059812A2 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4633422A (en) * | 1983-07-26 | 1986-12-30 | Cincinnati Electronics Corporation | Apparatus for and method of compensating for variations due to aging |
EP0591918A1 (fr) * | 1992-10-05 | 1994-04-13 | Matsushita Electric Industrial Co., Ltd. | Circuit intégré électro-acoustique hybride et méthode pour sa fabrication |
US5446306A (en) * | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
WO1998015984A1 (fr) * | 1996-10-10 | 1998-04-16 | Nokia Mobile Phones Limited | Methode permettant d'accorder des resonateurs d'onde acoustique en volume a film mince (fbar) |
-
2001
- 2001-02-09 WO PCT/DE2001/000503 patent/WO2001059812A2/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4633422A (en) * | 1983-07-26 | 1986-12-30 | Cincinnati Electronics Corporation | Apparatus for and method of compensating for variations due to aging |
EP0591918A1 (fr) * | 1992-10-05 | 1994-04-13 | Matsushita Electric Industrial Co., Ltd. | Circuit intégré électro-acoustique hybride et méthode pour sa fabrication |
US5446306A (en) * | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
WO1998015984A1 (fr) * | 1996-10-10 | 1998-04-16 | Nokia Mobile Phones Limited | Methode permettant d'accorder des resonateurs d'onde acoustique en volume a film mince (fbar) |
Also Published As
Publication number | Publication date |
---|---|
WO2001059812A3 (fr) | 2002-05-30 |
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