WO2001059812A2 - Assembly comprising a multitude of products each provided with a tunable electronic component, and assembly of devices each comprising such a product - Google Patents
Assembly comprising a multitude of products each provided with a tunable electronic component, and assembly of devices each comprising such a product Download PDFInfo
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- WO2001059812A2 WO2001059812A2 PCT/DE2001/000503 DE0100503W WO0159812A2 WO 2001059812 A2 WO2001059812 A2 WO 2001059812A2 DE 0100503 W DE0100503 W DE 0100503W WO 0159812 A2 WO0159812 A2 WO 0159812A2
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- 239000010409 thin film Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003679 aging effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J1/00—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general
- H03J1/0008—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
- H03J5/02—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with variable tuning element having a number of predetermined settings and adjustable to a desired one of these settings
- H03J5/0245—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form
- H03J5/0254—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form the digital values being transfered to a D/A converter
- H03J5/0263—Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form the digital values being transfered to a D/A converter the digital values being held in an auxiliary non erasable memory
Definitions
- a set comprising many products, each with a tunable electronic component, and a set of arrangements, each comprising such a product
- the invention relates to a set comprising a large number of products, each of which has an electronic component which has a parameter which can be changed by coordinating the respective component with an electrical signal.
- the invention relates to a set comprising many arrangements, each comprising such a product.
- the component is an acoustic thin-film volume resonator.
- This comprises a piezoelectric thin film, consisting in particular of zinc oxide and having a thickness on the order of a few micrometers.
- the thin film is enclosed between two electrodes, via which it can be acted upon by a high-frequency electrical signal, the frequency of which is of the order of 1 GHz.
- the combination of electrodes and thin film is arranged on an insulating membrane, which consists in particular of silicon nitride, and this membrane is on one
- This substrate can be silicon.
- a determination variable of an individual electronic component in particular an electromechanical resonator, can be changed by tuning with an electrical signal. This vote will be corrected by
- the values of an amplitude of the correction signal necessary for correcting the individual component are contained in a memory assigned to the component.
- an FBAR can in principle be changed, in particular by tuning the FBAR with a DC voltage applied to the aforementioned electrodes or special tuning electrodes. This coordination can serve in particular to correct disruptive influences from the surroundings of the product, in particular a temperature fluctuation.
- an FBAR can be arranged on a substrate made of silicon, on which yet another component, which can be interconnected with the FBAR, can be formed.
- An acoustic thin film bulk resonator also referred to in technical terms as a "thin film bulk acoustic resonator” and commonly abbreviated "FBAR" is being considered as a filter for use in a mobile communication device.
- the basic suitability is, however, a disadvantage that the production of the required thin film has so far only been possible with a comparatively high tolerance with regard to the thickness that can be achieved, although the thickness essentially determines the resonance frequency of the resonator.
- the currently achievable tolerance does not allow the thin film to be reproduced as part of a large series production in such a way that a tolerance with respect to the resonance frequency of the order of one per thousand is achieved. This is however, a necessary prerequisite for the use of corresponding products in the context of large series production of mobile communication devices.
- the invention has for its object to provide a set of the type mentioned, which makes it possible to provide the associated electronic components, each of which can in particular be an FBAR, in a manner suitable for further use in the context of a large series.
- One sentence should also include many
- Arrangements each of which is a product with an electronic component, which can in particular be an FBAR.
- the arrangements of the set can continue to be used as part of a large series.
- a set comprising a large number of products, each of which has a respective electronic component, the respective component having a parameter which can be changed by coordinating the respective component with a respective electrical signal, with a) each product corresponding to the respective one Has component-associated respective memory, in which a value of an amplitude of the respective electrical signal is stored, and b) the determinants of all products are the same when each product has the respective component with a respective electrical signal with the respective amplitude stored in the respective memory is coordinated.
- a set comprising a large number of arrangements, each of which has a respective product with a respective electronic component, the respective component being a
- Determination size which by voting the each component can be changed with a respective electrical signal
- each arrangement has a respective memory associated with the respective component, in which a value of an amplitude of the respective electrical signal is stored, and a respective control circuit connected to the respective component and the respective memory Formation of a respective electrical signal fed to the respective component, which has the respective amplitude stored in the respective memory, and b) the determinants of all products are identical to one another, if in each product the respective component with a respective electrical signal with that in the respective Memory stored respective amplitude is matched.
- each tunable electronic component in the set of products or arrangements is therefore provided with information by means of which the product can be individually tuned.
- This information is stored in a memory, in particular digital, assigned to the product.
- this information can be read out from the memory and used to coordinate the product, possibly taking into account further specific requirements.
- the information is stored in the memory in digital form and is fed to an analog-to-digital converter, which supplies a voltage that corresponds to the information, is proportional to a predetermined, in particular standardized, nominal voltage and to the component for the purpose of tuning in such a way that the determination variable is theirs predetermined value is reached, is supplied.
- the invention contributes to the fact that the tolerance with which all electronic components of an entire set each reach a predetermined value for their intended size in the intended operation, is at least within a certain limit independent of the tolerance with which the electronic components within the set are manufactured.
- Each product of a given set is accompanied by the information which is necessary in order to coordinate the component of the product for its intended operation. This takes place in particular in that each product is measured accordingly in the course of production and the information obtained in this way is stored in the memory.
- Each component is preferably a resonator, more preferably a mechanical vibrator, and further preferably an acoustic thin-film volume resonator (FBAR).
- FBAR acoustic thin-film volume resonator
- Each memory is preferably a PROM memory of conventional design; it can be of relatively simple design, since with a commonly required precision of in particular one per thousand, it hardly requires more than 10 bits of storage space.
- Each component and the associated memory are preferably arranged on a common substrate.
- the substrate can be a silicon chip, on which, for example, a membrane which carries the component can be attached and on which the memory is constructed using conventional semiconductor technology.
- the component and the memory are preferably also arranged in a common housing.
- the signal to be supplied to the component for the purpose of tuning is preferably an electrical direct voltage.
- each product can contain several components to which a single memory is assigned; this is possible if the components are selected so that they can be tuned as intended with the same electrical signal.
- a single memory can also contain values for several components.
- the inclusion of the component in an electrical high-frequency circuit preferably takes place in that a connection between the control circuit for tuning the component and the component itself is decoupled from the high-frequency circuit - for example by capacitors or coils in accordance with conventional high-frequency technology.
- Figure 1 is a sketched plan view of a product of a set as described above; and Figure 2 is a circuit representing an arrangement of a set as described above.
- the product according to FIG. 1 comprises an electronic one
- Component 1 which has a determination size that can be changed by tuning the component 1 with an electrical signal.
- the product has a memory 2 assigned to the component 1, in which a value of an amplitude of the electrical signal for tuning the
- Component 1 is stored.
- the product shown is to be regarded as representative of a sentence including one A large number of such products, it being desired that the determination size of the respective component 1 of each product has a predetermined value with a predetermined, relatively narrow tolerance. It is assumed that the process of making the set is achieving this
- Tolerance does not simply ensure that each component has a determinant for itself, in particular without an additional tuning measure, that is outside the specified tolerance.
- a value of an amplitude for the electrical signal to be applied for tuning the component 1 is ascertained for each component, which ensures that the quantity to be determined has the specified value within the specified tolerance. This value is stored in the memory 2 assigned to the component 1 and is available there so that it can be read by a suitable control circuit 5 (see FIG. 2) and used to tune the component 1.
- Component 1 is an acoustic thin film volume
- Resonator comprising a thin film a few micrometers thick made of a piezoelectric material, which can be set into acoustic vibrations by electrodes attached to it.
- Such an acoustic thin-film volume resonator is fundamentally particularly suitable for use as
- the component 1 and the memory 2 are arranged on a common substrate 3 and in a common housing 4 (indicated by dashed lines). Connections 7 of the component 1 and connections 8 of the memory 2 are led through the housing 4 to the outside.
- the component 1 is attached to a membrane 9, namely a thin layer of silicon nitride, and arranged over a recess 10 m in the substrate 3, so that it can vibrate as freely as possible.
- the substrate 3 consists of silicon; it can therefore be used to realize the memory of 2 m of common silicon semiconductor technology.
- the memory 2 does not have to contain any complex circuitry, because the m it needs to be stored
- the programming of the memory 2 can be carried out in particular by cutting conductors in this memory 2, for example by means of a laser.
- Figure 2 shows a circuit as a representative of a
- the component 1 forms part of an electrical high-frequency circuit 6, for example a receiver circuit in a mobile phone.
- the memory 2 is connected to a control circuit 5, in particular a digital-to-analog converter.
- the control circuit 5 generates a DC electrical voltage with which the component 1 is tuned.
- the connection between the control circuit 5 and the component 1 is decoupled from the high-frequency circuit, specifically by means of coils 11 and capacitors 12 in accordance with common high-frequency technology.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
The invention relates to an assembly comprising a multitude of products provided with an electronic component (1), which has a fundamental quantity that can be modified by tuning the component (1) using an electrical signal. The inventive assembly also comprises a memory (2) which is assigned to the component (1) and in which a value of an amplitude of the electrical signal is stored. The fundamental quantities of the products of the assembly are identical to one another when, in each product, the respective component (1) is tuned using a respective electrical signal with the respective value of the amplitude stored in the respective memory (2). Each device of the assembly comprises one such product and one control circuit (5), which is connected to the respective component (1) and to the respective memory (2) and which forms an electrical signal supplied to the respective component (1). Said electrical signal has the respective value of the amplitude stored in the respective memory.
Description
Beschreibungdescription
Satz umfassend viele Erzeugnisse mit jeweils einem abstimmbaren elektronischen Bauelement, sowie Satz von Anordnungen umfassend jeweils ein solches ErzeugnisA set comprising many products, each with a tunable electronic component, and a set of arrangements, each comprising such a product
Die Erfindung betrifft einen Satz umfassend viele Erzeugnisse, deren jedes jeweils ein elektronisches Bauelement aufweist, welches eine Bestimmungsgröße aufweist, die durch Abstimmung des jeweiligen Bauelements mit einem elektrischen Signal veränderbar ist. Außerdem betrifft die Erfindung einen Satz umfassend viele Anordnungen umfassend jeweils ein solches Erzeugnis.The invention relates to a set comprising a large number of products, each of which has an electronic component which has a parameter which can be changed by coordinating the respective component with an electrical signal. In addition, the invention relates to a set comprising many arrangements, each comprising such a product.
Ein entsprechendes Erzeugnis geht hervor aus dem AufsatzA corresponding product is shown in the article
"Simple Post-processing Technique to Tune Resonant Frequency of Film Bulk Acoustic Resonators and Stacked Crystal Filters" von H. Lakdawala und B. S. Kim, 1998 IEEE Intern. Freq. Ctrl. Symp., Proc. S. 831, siehe insbesondere Figur 1 nebst zugehöriger Beschreibung. Ein solches Erzeugnis geht auch hervor aus der EP 0 834 989 A2, siehe insbesondere die Zusammenfassung sowie Figur 2A nebst zugehöriger Beschreibung ."Simple Post-processing Technique to Tune Resonant Frequency of Film Bulk Acoustic Resonators and Stacked Crystal Filters" by H. Lakdawala and B. S. Kim, 1998 IEEE Intern. Freq. Ctrl. Symp., Proc. P. 831, see in particular FIG. 1 together with the associated description. Such a product is also apparent from EP 0 834 989 A2, see in particular the summary and FIG. 2A together with the associated description.
Das zu dem bekannten Erzeugnis gehörige elektronischeThe electronic belonging to the known product
Bauelement ist ein akustischer Dünnfilm-Volumen-Resonator . Dieser umfasst einen piezoelektrischen Dünnfilm, bestehend insbesondere aus Zinkoxid und habend eine Dicke in der Größenordnung weniger Mikrometer. Der Dünnfilm ist eingefasst zwischen zwei Elektroden, über welche er mit einem hochfrequenten elektrischen Signal, dessen Frequenz in der Größenordnung von 1 GHz liegt, beaufschlagt werden kann. Die Kombination aus Elektroden und Dünnfilm ist angeordnet auf einer isolierenden Membran, welche insbesondere aus Siliziumnitrid besteht, und diese Membran ist auf einemThe component is an acoustic thin-film volume resonator. This comprises a piezoelectric thin film, consisting in particular of zinc oxide and having a thickness on the order of a few micrometers. The thin film is enclosed between two electrodes, via which it can be acted upon by a high-frequency electrical signal, the frequency of which is of the order of 1 GHz. The combination of electrodes and thin film is arranged on an insulating membrane, which consists in particular of silicon nitride, and this membrane is on one
Substrat aufgebracht. Dieses Substrat kann Silizium sein.
Aus dem US-Patent 4,633,422 ist es bekannt, dass eine Bestimmungsgröße eines einzelnen elektronischen Bauelements, insbesondere eines elektromechanischen Resonators, durch Abstimmen mit einem elektrischen Signal veränderbar ist. Diese Abstimmung wird zur Korrektur von durchSubstrate applied. This substrate can be silicon. From US Pat. No. 4,633,422 it is known that a determination variable of an individual electronic component, in particular an electromechanical resonator, can be changed by tuning with an electrical signal. This vote will be corrected by
Alterungseffekten oder Temperaturschwankungen bedingten Abweichungen der Bestimmungsgröße des einzelnen Bauelements verwendet. Die zur Korrektur des einzelnen Bauelements nötigen Werte einer Amplitude des Korrektursignals sind in einem dem Bauelement zugeordneten Speicher enthalten.Aging effects or temperature fluctuations-related deviations in the determination size of the individual component are used. The values of an amplitude of the correction signal necessary for correcting the individual component are contained in a memory assigned to the component.
Aus der EP 0 834 989 A2 ist es bekannt, dass die Resonanzfrequenz eines FBAR grundsätzlich veränderbar ist, insbesondere durch Abstimmung des FBAR mit einer an die erwähnten Elektroden oder besondere Abstimmungselektroden angelegten Gleichspannung. Diese Abstimmung kann insbesondere dazu dienen, störende Einflüsse aus der Umgebung des Erzeugnisses, insbesondere eine Temperaturschwankung, zu korrigieren. Aus dem Dokument geht auch hervor, dass ein FBAR auf einem Substrat aus Silizium angeordnet werden kann, auf welchem noch ein weiteres Bauelement, welches mit dem FBAR zusammenschaltbar ist, gebildet sein kann.It is known from EP 0 834 989 A2 that the resonance frequency of an FBAR can in principle be changed, in particular by tuning the FBAR with a DC voltage applied to the aforementioned electrodes or special tuning electrodes. This coordination can serve in particular to correct disruptive influences from the surroundings of the product, in particular a temperature fluctuation. The document also shows that an FBAR can be arranged on a substrate made of silicon, on which yet another component, which can be interconnected with the FBAR, can be formed.
Ein akustischer Dünnfilm-Volumen-Resonator, fachsprachlich auch als "Thin film bulk acoustic resonator" bezeichnet und geläufig mit "FBAR" abgekürzt, wird in Betracht gezogen als Filter zur Verwendung in einer mobilen Kommunikationseinrichtung. Der grundsätzlichen Eignung gegenüber steht allerdings als Nachteil, dass die Herstellung des benötigten Dünnfilms bislang nur mit einer vergleichsweise hohen Toleranz hinsichtlich der erreichbaren Dicke gelingt, wobei die Dicke allerdings wesentlich die Resonanzfrequenz des Resonators bestimmt. Die derzeit erreichbare Toleranz lässt es nicht zu, den Dünnfilm im Rahmen einer Großserienfertigung derart zu reproduzieren, dass eine Toleranz hinsichtlich der Resonanzfrequenz in der Größenordnung von einem Promille erreicht wird. Dies ist
allerdings zur Verwendung entsprechender Erzeugnisse im Rahmen einer Großserienfertigung von mobilen Kommunikationseinrichtungen eine notwendige Voraussetzung.An acoustic thin film bulk resonator, also referred to in technical terms as a "thin film bulk acoustic resonator" and commonly abbreviated "FBAR", is being considered as a filter for use in a mobile communication device. The basic suitability is, however, a disadvantage that the production of the required thin film has so far only been possible with a comparatively high tolerance with regard to the thickness that can be achieved, although the thickness essentially determines the resonance frequency of the resonator. The currently achievable tolerance does not allow the thin film to be reproduced as part of a large series production in such a way that a tolerance with respect to the resonance frequency of the order of one per thousand is achieved. This is however, a necessary prerequisite for the use of corresponding products in the context of large series production of mobile communication devices.
Der Erfindung liegt die Aufgabe zugrunde, einen Satz der eingangs genannten Art anzugeben, der es ermöglicht, die zugehörigen elektronischen Bauelemente, deren jedes insbesondere ein FBAR sein kann, in einer zur Weiterverwendung im Rahmen einer Großserie geeigneten Weise bereitzustellen. Auch soll ein Satz umfassend vieleThe invention has for its object to provide a set of the type mentioned, which makes it possible to provide the associated electronic components, each of which can in particular be an FBAR, in a manner suitable for further use in the context of a large series. One sentence should also include many
Anordnungen, deren jede jeweils ein Erzeugnis mit einem elektronischen Bauelement, das insbesondere ein FBAR sein kann angegeben werden. Die Anordnungen des Satzes können im Rahmen einer Großserie weiterverwendet werden.Arrangements, each of which is a product with an electronic component, which can in particular be an FBAR. The arrangements of the set can continue to be used as part of a large series.
Zur Lösung der Aufgabe angegeben wird ein Satz umfassend viele Erzeugnisse, deren jedes ein jeweiliges elektronisches Bauelement aufweist, wobei das jeweilige Bauelement eine Bestimmungsgröße aufweist, die durch Abstimmung des jeweiligen Bauelements mit einem jeweiligen elektrischen Signal veränderbar ist, wobei a) jedes Erzeugnis einen dem jeweiligen Bauelement zugeordneten jeweiligen Speicher aufweist, worin ein Wert einer Amplitude des jeweiligen elektrischen Signals abgespeichert ist, und b) die Bestimmungsgrößen aller Erzeugnisse untereinander gleich sind, wenn in jedem Erzeugnis das jeweilige Bauelement mit einem jeweiligen elektrischen Signal mit der in dem jeweiligen Speicher gespeicherten jeweiligen Amplitude abgestimmt ist.To achieve the object, a set is given comprising a large number of products, each of which has a respective electronic component, the respective component having a parameter which can be changed by coordinating the respective component with a respective electrical signal, with a) each product corresponding to the respective one Has component-associated respective memory, in which a value of an amplitude of the respective electrical signal is stored, and b) the determinants of all products are the same when each product has the respective component with a respective electrical signal with the respective amplitude stored in the respective memory is coordinated.
Zur Lösung dieser Aufgabe angegeben wird weiter ein Satz umfassend viele Anordnungen, deren jede ein jeweiliges Erzeugnis mit einem jeweiligen elektronischen Bauelement aufweist, wobei das jeweilige Bauelement eineTo achieve this object, a set comprising a large number of arrangements, each of which has a respective product with a respective electronic component, the respective component being a
Bestimmungsgröße aufweist, die durch Abstimmung des
jeweiligen Bauelements mit einem jeweiligen elektrischen Signal veränderbar ist, wobei a) jede Anordnung einen dem jeweiligen Bauelement zugeordneten jeweiligen Speicher, worin ein Wert einer Amplitude des jeweiligen elektrischen Signals abgespeichert ist, sowie eine mit dem jeweiligen Bauelement und dem jeweiligen Speicher jeweils verbundene jeweilige Steuerschaltung zur Bildung eines dem jeweiligen Bauelement zugeführten jeweiligen elektrischen Signals, welches die in dem jeweiligen Speicher gespeicherte jeweilige Amplitude hat, aufweist und b) die Bestimmungsgrößen aller Erzeugnisse untereinander gleich sind, wenn in jedem Erzeugnis das jeweilige Bauelement mit einem jeweiligen elektrischen Signal mit der in dem jeweiligen Speicher gespeicherten jeweiligen Amplitude abgestimmt ist.Determination size, which by voting the each component can be changed with a respective electrical signal, wherein a) each arrangement has a respective memory associated with the respective component, in which a value of an amplitude of the respective electrical signal is stored, and a respective control circuit connected to the respective component and the respective memory Formation of a respective electrical signal fed to the respective component, which has the respective amplitude stored in the respective memory, and b) the determinants of all products are identical to one another, if in each product the respective component with a respective electrical signal with that in the respective Memory stored respective amplitude is matched.
Erfindungsgemäß wird mithin jedem abstimmbaren elektronischen Bauelement in dem Satz von Erzeugnissen oder Anordnungen eine Information beigegeben, anhand derer das Erzeugnis individuell abgestimmt werden kann. Diese Information ist niedergelegt in einem dem Erzeugnis zugeordneten, insbesondere digitalen Speicher. Zum Betrieb des Erzeugnisses, wobei gefordert ist, dass die Bestimmungsgröße einem vorgegebenen Wert entspreche, kann diese Information aus dem Speicher ausgelesen und zur Abstimmung des Erzeugnisses, gegebenenfalls unter Berücksichtigung weiterer bestimmter Vorgaben, verwendet werden. Insbesondere ist die Information in dem Speicher in digitaler Form abgelegt und wird einem Analog-Digital-Wandler zugeführt, welcher eine Spannung liefert, die der Information entspricht, einer vorgegebenen, insbesondere normierten Nennspannung proportional ist und dem Bauelement zwecks Abstimmung dahingehend, dass die Bestimmungsgröße ihren vorgegebenen Wert erreicht, zugeführt wird.
Die Erfindung tragt dazu bei, dass die Toleranz, mit welcher alle elektronischen Bauelemente eines gesamten Satzes jeweils im besti mungsgemaßen Betrieb einen vorgegebenen Wert für ihre Bestimmungsgroße erreichen, zumindest innerhalb einer gewissen Grenze unabhängig ist von der Toleranz, mit welcher die elektronischen Bauelemente innerhalb des Satzes hergestellt sind. Jedem Erzeugnis eines gegebenen Satzes ist diejenige Information beigegeben, die notig ist, um das Bauelement des Erzeugnisses für seinen bestimmungsgemaßen Betrieb abzustimmen. Dies erfolgt insbesondere dadurch, dass jedes Erzeugnis im Rahmen der Herstellung entsprechend vermessen und die dabei gewonnene Information m dem Speicher abgelegt wird.According to the invention, each tunable electronic component in the set of products or arrangements is therefore provided with information by means of which the product can be individually tuned. This information is stored in a memory, in particular digital, assigned to the product. For the operation of the product, where it is required that the determination quantity correspond to a predetermined value, this information can be read out from the memory and used to coordinate the product, possibly taking into account further specific requirements. In particular, the information is stored in the memory in digital form and is fed to an analog-to-digital converter, which supplies a voltage that corresponds to the information, is proportional to a predetermined, in particular standardized, nominal voltage and to the component for the purpose of tuning in such a way that the determination variable is theirs predetermined value is reached, is supplied. The invention contributes to the fact that the tolerance with which all electronic components of an entire set each reach a predetermined value for their intended size in the intended operation, is at least within a certain limit independent of the tolerance with which the electronic components within the set are manufactured. Each product of a given set is accompanied by the information which is necessary in order to coordinate the component of the product for its intended operation. This takes place in particular in that each product is measured accordingly in the course of production and the information obtained in this way is stored in the memory.
Die nachfolgend zu beschreibenden bevorzugten Weiterbildungen der Erfindung beziehen sich selbstverständlich sowohl auf den Satz umfassend viele Erzeugnisse als auch den Satz umfassend viele Anordnungen.The preferred developments of the invention to be described below naturally relate both to the set comprising many products and to the set comprising many arrangements.
Jedes Bauelement ist vorzugsweise ein Resonator, weiter vorzugsweise ein mechanischer Schwinger, ferner vorzugsweise ein akustischer Dunnfllm-Volu en-Resonator (FBAR) .Each component is preferably a resonator, more preferably a mechanical vibrator, and further preferably an acoustic thin-film volume resonator (FBAR).
Jeder Speicher ist vorzugsweise ein PROM-Speicher herkömmlicher Ausprägung; er kann relativ einfach ausgestaltet sein, da er bei einer geläufig gewünschten Präzision um insbesondere ein Promille kaum mehr als 10 Bit Speicherplatz erfordert.Each memory is preferably a PROM memory of conventional design; it can be of relatively simple design, since with a commonly required precision of in particular one per thousand, it hardly requires more than 10 bits of storage space.
Jedes Bauelement und der zugehörige Speicher sind vorzugsweise auf einem gemeinsamen Substrat angeordnet. Das Substrat kann ein Siliziumchip sein, auf welchem beispielsweise eine Membran, die das Bauelement tragt, befestigt sein kann und m welchem der Speicher m herkömmlicher Halbleiter-Technologie aufgebaut ist.
Vorzugsweise sind auch das Bauelement und der Speicher m einem gemeinsamen Gehäuse angeordnet.Each component and the associated memory are preferably arranged on a common substrate. The substrate can be a silicon chip, on which, for example, a membrane which carries the component can be attached and on which the memory is constructed using conventional semiconductor technology. The component and the memory are preferably also arranged in a common housing.
Das dem Bauelement zwecks Abstimmung zuzuführende Signal ist vorzugsweise eine elektrische Gleichspannung.The signal to be supplied to the component for the purpose of tuning is preferably an electrical direct voltage.
Gegebenenfalls kann jedes Erzeugnis mehrere Bauelemente enthalten, denen ein einziger Speicher zugeordnet ist; dies ist möglich, wenn die Bauelemente so ausgewählt sind, dass sie mit demselben elektrischen Signal bestimmungsgemäß abstimmbar sind. Alternativ kann ein einziger Speicher auch Werte für mehrere Bauelemente enthalten.If necessary, each product can contain several components to which a single memory is assigned; this is possible if the components are selected so that they can be tuned as intended with the same electrical signal. Alternatively, a single memory can also contain values for several components.
Die Einbeziehung des Bauelements m eine elektrische Hochfrequenzschaltung erfolgt vorzugsweise dadurch, dass eine Verbindung zwischen der Steuerschaltung zur Abstimmung des Bauelements und dem Bauelement selbst von der Hochfrequenzschaltung entkoppelt ist - beispielsweise durch Kondensatoren oder Spulen entsprechend herkömmlicher Hochfrequenztechnologie.The inclusion of the component in an electrical high-frequency circuit preferably takes place in that a connection between the control circuit for tuning the component and the component itself is decoupled from the high-frequency circuit - for example by capacitors or coils in accordance with conventional high-frequency technology.
Ausfuhrungsbeispiele der Erfindung werden nunmehr anhand der Zeichnung erläutert. Im einzelnen zeigen:Exemplary embodiments of the invention will now be explained with reference to the drawing. In detail show:
Figur 1 eine skizzierte Draufsicht auf ein Erzeugnis eines Satzes wie vorstehend beschrieben; und Figur 2 eine Schaltung, die eine Anordnung eines Satzes wie vorstehend beschrieben repräsentiert.Figure 1 is a sketched plan view of a product of a set as described above; and Figure 2 is a circuit representing an arrangement of a set as described above.
Das Erzeugnis gemäß Figur 1 umfasst ein elektronischesThe product according to FIG. 1 comprises an electronic one
Bauelement 1, welches eine Bestimmungsgroße aufweist, die durch Abstimmung des Bauelements 1 mit einem elektrischen Signal veränderbar ist. Zusatzlich weist das Erzeugnis einen dem Bauelement 1 zugeordneten Speicher 2 auf, worin ein Wert einer Amplitude des elektrischen Signals zur Abstimmung desComponent 1, which has a determination size that can be changed by tuning the component 1 with an electrical signal. In addition, the product has a memory 2 assigned to the component 1, in which a value of an amplitude of the electrical signal for tuning the
Bauelements 1 gespeichert ist. Das dargestellte Erzeugnis ist anzusehen als Repräsentant für einen Satz umfassend eine
Vielzahl solcher Erzeugnisse, wobei es gewünscht ist, dass die Bestimmungsgroße des jeweiligen Bauelements 1 jedes Erzeugnisses einen vorgegebenen Wert mit einer vorgegebenen, relativ engen Toleranz aufweise. Es sei angenommen, dass der Prozess zur Herstellung des Satzes die Erzielung dieserComponent 1 is stored. The product shown is to be regarded as representative of a sentence including one A large number of such products, it being desired that the determination size of the respective component 1 of each product has a predetermined value with a predetermined, relatively narrow tolerance. It is assumed that the process of making the set is achieving this
Toleranz nicht ohne weiteres gewahrleiste, dass also edes Bauelement für sich, insbesondere ohne eine zusätzliche Abstimmmaßnahme, eine Bestimmungsgroße habe, d e außerhalb der vorgegebenen Toleranz liegt. Um dennoch die Verwendbarkeit des Satzes zu ermöglichen, wird zu jedem Bauelement ein Wert einer Amplitude für dasjenige zur Abstimmung des Bauelements 1 anzulegende elektrische Signal ermittelt, welches sicherstellt, dass die Bestimmungsgroße den vorgegebenen Wert innerhalb der vorgegebenen Toleranz hat. Dieser Wert wird in dem dem Bauelement 1 zugeordneten Speicher 2 abgelegt und steht dort zur Verfugung, um von einer geeigneten Steuerschaltung 5 (siehe Figur 2) gelesen und zur -Abstimmung des Bauelements 1 verwendet zu werden.Tolerance does not simply ensure that each component has a determinant for itself, in particular without an additional tuning measure, that is outside the specified tolerance. In order nevertheless to enable the set to be used, a value of an amplitude for the electrical signal to be applied for tuning the component 1 is ascertained for each component, which ensures that the quantity to be determined has the specified value within the specified tolerance. This value is stored in the memory 2 assigned to the component 1 and is available there so that it can be read by a suitable control circuit 5 (see FIG. 2) and used to tune the component 1.
Das Bauelement 1 ist ein akustischer Dunnfllm-Volumen-Component 1 is an acoustic thin film volume
Resonator umfassend einen wenige Mikrometer dicken Dünnfilm aus einem piezoelektrischen Material, welcher durch an ihm angebrachte Elektroden in akustische Schwingungen versetzbar ist. Ein solcher akustischer Dunnfllm-Volumen-Resonator ist grundsätzlich hervorragend geeignet zum Einsatz alsResonator comprising a thin film a few micrometers thick made of a piezoelectric material, which can be set into acoustic vibrations by electrodes attached to it. Such an acoustic thin-film volume resonator is fundamentally particularly suitable for use as
Emgangsfllter in einer Kommunikationseinheit wie einem Mobiltelefon. Jedoch besteht die Schwierigkeit, dass die Resonanzfrequenz eines solchen Resonators wesentlich bestimmt wird durch die Dicke des Dunnfilms, welcher im Rahmen der derzeit verfugbaren Technologie nur im Rahmen einer vergleichsweise hohen Toleranz serienweise herstellbar ist. In -Anwendung der Erfindung kann eine solche hohe Toleranz bei der Herstellung eines jeden Bauelementes m Kauf genommen werden, denn es ist sichergestellt, dass ein jedes Bauelement zur bestimmungsgemaßen Verwendung mit einfachen Mitteln nachträglich abgestimmt werden kann.
Das Bauelement 1 und der Speicher 2 sind angebracht auf einem gemeinsamen Substrat 3 und in einem gemeinsamen Gehäuse 4 (gestrichelt angedeutet) angeordnet. Anschlüsse 7 des Bauelements 1 und Anschlüsse 8 des Speichers 2 sind durch das Gehäuse 4 nach außen gefuhrt.Message filter in a communication unit such as a mobile phone. However, there is the difficulty that the resonance frequency of such a resonator is essentially determined by the thickness of the thin film, which can only be produced in series within the framework of the technology currently available within the framework of a comparatively high tolerance. In the application of the invention, such a high tolerance can be taken in the manufacture of each component in the purchase, since it is ensured that each component can be retrospectively adjusted with simple means for the intended use. The component 1 and the memory 2 are arranged on a common substrate 3 and in a common housing 4 (indicated by dashed lines). Connections 7 of the component 1 and connections 8 of the memory 2 are led through the housing 4 to the outside.
Das Bauelement 1 ist angebracht auf einer Membran 9, namlich einer dünnen Schicht aus Siliziumnitπd, und angeordnet über einer Ausnehmung 10 m dem Substrat 3, damit es möglichst frei schwingen kann. Das Substrat 3 besteht aus Silizium; es kann daher verwendet werden, um den Speicher 2 m gewohnlicher Silizium-Halbleiter-Technologie zu realisieren.The component 1 is attached to a membrane 9, namely a thin layer of silicon nitride, and arranged over a recess 10 m in the substrate 3, so that it can vibrate as freely as possible. The substrate 3 consists of silicon; it can therefore be used to realize the memory of 2 m of common silicon semiconductor technology.
Selbstverständlich muss der Speicher 2 keine aufwendige Schaltung beinhalten, denn die m ihm zu speicherndeOf course, the memory 2 does not have to contain any complex circuitry, because the m it needs to be stored
Information wird in der Regel kaum mehr als 10 Bit betragen.Information will generally be little more than 10 bits.
Die Programmierung des Speichers 2 kann insbesondere dadurch erfolgen, dass Leiterbahnen m diesen Speicher 2 durchtrennt werden, beispielsweise mittels eines Lasers.The programming of the memory 2 can be carried out in particular by cutting conductors in this memory 2, for example by means of a laser.
Figur 2 zeigt eine Schaltung als Repräsentant für eineFigure 2 shows a circuit as a representative of a
Anordnung, in welche ein Erzeugnis gemäß Figur 1 einbezogen ist .Arrangement in which a product according to Figure 1 is included.
Das Bauelement 1 bildet einen Teil einer elektrischen Hochfrequenzschaltung 6, beispielsweise einer Empfangerschaltung m einem Mobiltelefon . Der Speicher 2 ist verbunden mit einer Steuerschaltung 5, insbesondere einem Digital-Analog-Wandler . Die Steuerschaltung 5 erzeugt eine elektrische Gleichspannung, mit der das Bauelement 1 abgestimmt wird. Die Verbindung zwischen der Steuerschaltung 5 und dem Bauelement 1 ist von der Hochfrequenzschaltung entkoppelt, und zwar mittels Spulen 11 und Kondensatoren 12 entsprechend geläufiger Hochfrequenztechnologie.
The component 1 forms part of an electrical high-frequency circuit 6, for example a receiver circuit in a mobile phone. The memory 2 is connected to a control circuit 5, in particular a digital-to-analog converter. The control circuit 5 generates a DC electrical voltage with which the component 1 is tuned. The connection between the control circuit 5 and the component 1 is decoupled from the high-frequency circuit, specifically by means of coils 11 and capacitors 12 in accordance with common high-frequency technology.
Claims
1. Ein Satz umfassend viele Erzeugnisse, deren jedes ein jeweiliges elektronisches Bauelement (1) aufweist, welches eine Bestimmungsgroße aufweist, die durch Abstimmung des jeweiligen Bauelements (1) mit einem jeweiligen elektrischen1. A set comprising many products, each of which has a respective electronic component (1), which has a size determined by matching the respective component (1) with a respective electrical
Signal veränderbar ist, dadurch gekennzeichnet, dass a) jedes Erzeugnis einen dem jeweiligen Bauelement (1) zugeordneten jeweiligen Speicher (2) aufweist, worin ein Wert einer Amplitude des jeweiligen elektrischen Signals abgespeichert ist, und b) die Bestimmungsgroßen aller Erzeugnisse untereinander gleich sind, wenn m edem Erzeugnis das jeweilige Bauelement (1) mit einem jeweiligen elektrischen Signal mit der m dem jeweiligen Speicher (2) gespeicherten jeweiligen Amplitude abgestimmt ist.Signal can be changed, characterized in that a) each product has a respective memory (2) assigned to the respective component (1), in which a value of an amplitude of the respective electrical signal is stored, and b) the determination quantities of all products are identical to one another, if the respective component (1) is matched with a respective electrical signal with the respective amplitude stored in the respective memory (2).
2. Satz nach Anspruch 1, bei dem das jeweilige Bauelement (1) jedes Erzeugnisses ein Resonator ist.2. Set according to claim 1, wherein the respective component (1) of each product is a resonator.
3. Satz nach Anspruch 2, bei dem das jeweilige Bauelement (1) jedes Erzeugnisses ein mechanischer Schwinger ist.3. Set according to claim 2, wherein the respective component (1) of each product is a mechanical vibrator.
4. Satz nach Anspruch 3, bei dem das jeweilige Bauelement (1) jedes Erzeugnisses ein akustischer Dunnfllm-Volumen-Resonator4. Set according to claim 3, wherein the respective component (1) of each product is an acoustic thin-film volume resonator
5. Satz nach einem der vorigen Ansprüche, bei dem der jeweilige Speicher (2) jedes Erzeugnisses ein PROM-Speicher ist .5. Set according to one of the preceding claims, in which the respective memory (2) of each product is a PROM memory.
6. Satz nach einem der vorigen Ansprüche, bei dem das jeweilige Bauelement (1) und der jeweilige Speicher (2) jedes Erzeugnisses auf einem jeweiligen gemeinsamen Substrat (3) angeordnet sind. 6. Set according to one of the preceding claims, in which the respective component (1) and the respective memory (2) of each product are arranged on a respective common substrate (3).
7. Satz nach einem der vorigen Anspr che, bei dem das jeweilige Bauelement (1) und der jeweilige Speicher (2) jedes Erzeugnisses in einem jeweiligen gemeinsamen Gehäuse (4) angeordnet sind.7. Set according to one of the preceding claims, in which the respective component (1) and the respective memory (2) of each product are arranged in a respective common housing (4).
8. Satz umfassend viele Anordnungen, deren jede ein jeweiliges Erzeugnis mit einem jeweiligen elektronischen Bauelement (1) aufweist, wobei das jeweilige elektronische Bauelement eine Bestimmungsgroße aufweist, die durch Abstimmung des jeweiligen Bauelements (1) mit einem jeweiligen elektrischen Signal veränderbar ist, dadurch gekennzeichnet, dass a) ede Anordnung einen dem jeweiligen Bauelement (1) zugeordneten jeweiligen Speicher (2), worin ein Wert einer Amplitude des jeweiligen elektrischen Signals abgespeichert ist, sowie eine mit dem jeweiligen Bauelement (1) und dem jeweiligen Speicher (2) eweils verbundene jeweilige Steuerschaltung (5) zur Bildung eines dem jeweiligen Bauelement (1) zugefuhrten, jeweiligen elektrischen Signals, welches einen m dem jeweiligen Speicher (2) gespeicherten Wert einer Amplitude aufweist, aufweist und b) die Bestimmungsgroßen aller Erzeugnisse untereinander gleich sind, wenn m jedem Erzeugnis das jeweilige Bauelement (1) mit einem jeweiligen elektrischen Signal mit der m dem jeweiligen Speicher (2) gespeicherten jeweiligen Amplitude abgestimmt ist.8. Set comprising many arrangements, each of which has a respective product with a respective electronic component (1), the respective electronic component having a determination size that can be changed by tuning the respective component (1) with a respective electrical signal, characterized that a) each arrangement has a respective memory (2) assigned to the respective component (1), in which a value of an amplitude of the respective electrical signal is stored, and a memory associated with the respective component (1) and the respective memory (2) respective control circuit (5) for forming a respective electrical signal which is supplied to the respective component (1) and which has an amplitude value stored in the respective memory (2), and b) the determination quantities of all products are the same if m each Product the respective component (1) with a respective electr ischen signal with the respective amplitude stored in the respective memory (2).
9. Satz nach Anspruch 8, bei dem das dem jeweiligen Bauelement (1) zugefuhrte jeweilige Signal eine elektrische Gleichspannung ist.9. Set according to claim 8, wherein the respective component (1) supplied respective signal is a DC electrical voltage.
10. Satz nach Anspruch 8 oder Anspruch 9, bei dem a) das jeweilige Bauelement (1) m eine jeweilige elektrische Hochfrequenzschaltung (6) geschaltet und b) eine Verbindung zwischen der jeweiligen Steuerschaltung (5) und dem jeweiligen Bauelement (1) von der jeweiligen Hochfrequenzschaltung (6) entkoppelt ist. 10. Set according to claim 8 or claim 9, in which a) the respective component (1) m a respective electrical high-frequency circuit (6) switched and b) a connection between the respective control circuit (5) and the respective component (1) of the respective high-frequency circuit (6) is decoupled.
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US4633422A (en) * | 1983-07-26 | 1986-12-30 | Cincinnati Electronics Corporation | Apparatus for and method of compensating for variations due to aging |
EP0591918A1 (en) * | 1992-10-05 | 1994-04-13 | Matsushita Electric Industrial Co., Ltd. | Electro-acoustic hybrid integrated circuit and manufacturing method thereof |
US5446306A (en) * | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
WO1998015984A1 (en) * | 1996-10-10 | 1998-04-16 | Nokia Mobile Phones Limited | Method for tuning thin film fbars |
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2001
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US4633422A (en) * | 1983-07-26 | 1986-12-30 | Cincinnati Electronics Corporation | Apparatus for and method of compensating for variations due to aging |
EP0591918A1 (en) * | 1992-10-05 | 1994-04-13 | Matsushita Electric Industrial Co., Ltd. | Electro-acoustic hybrid integrated circuit and manufacturing method thereof |
US5446306A (en) * | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
WO1998015984A1 (en) * | 1996-10-10 | 1998-04-16 | Nokia Mobile Phones Limited | Method for tuning thin film fbars |
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