WO2001017025A3 - Halbleiterbauelement als verzögerungselement und verwendung eines halbleiterbauelementes - Google Patents

Halbleiterbauelement als verzögerungselement und verwendung eines halbleiterbauelementes Download PDF

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Publication number
WO2001017025A3
WO2001017025A3 PCT/DE2000/003002 DE0003002W WO0117025A3 WO 2001017025 A3 WO2001017025 A3 WO 2001017025A3 DE 0003002 W DE0003002 W DE 0003002W WO 0117025 A3 WO0117025 A3 WO 0117025A3
Authority
WO
WIPO (PCT)
Prior art keywords
cell
gate electrode
floating gate
semi
conductor component
Prior art date
Application number
PCT/DE2000/003002
Other languages
English (en)
French (fr)
Other versions
WO2001017025A2 (de
Inventor
Eric-Roger Bruecklmeier
Herbert Palm
Andreas Kux
Original Assignee
Infineon Technologies Ag
Bruecklmeier Eric Roger
Herbert Palm
Andreas Kux
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Bruecklmeier Eric Roger, Herbert Palm, Andreas Kux filed Critical Infineon Technologies Ag
Publication of WO2001017025A2 publication Critical patent/WO2001017025A2/de
Publication of WO2001017025A3 publication Critical patent/WO2001017025A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)

Abstract

Eine Floating-Gate-Zelle wird als Zeitmaßstab verwendet, indem der Ladevorgang bis zum Erreichen einer vorgegebenen Einsatzspannung durch Anlegen einer ausreichend niedrigen Ladespannung verzögert wird. Ein besonders dünnes Tunneloxid kann dafür vorgesehen sein, eine allmähliche Entladung einer geladenen Zelle herbeizuführen. Vorzugsweise wird die Floating-Gate-Elektrode (5) mit der Kontroll-Gate-Elektrode (16) einer zweiten Zelle verbunden, die dann entsprechend verlangsamt die Floating-Gate-Elektrode (15) der zweiten Zelle lädt.
PCT/DE2000/003002 1999-09-01 2000-09-01 Halbleiterbauelement als verzögerungselement und verwendung eines halbleiterbauelementes WO2001017025A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19941684.2 1999-09-01
DE1999141684 DE19941684B4 (de) 1999-09-01 1999-09-01 Halbleiterbauelement als Verzögerungselement

Publications (2)

Publication Number Publication Date
WO2001017025A2 WO2001017025A2 (de) 2001-03-08
WO2001017025A3 true WO2001017025A3 (de) 2001-06-07

Family

ID=7920456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/003002 WO2001017025A2 (de) 1999-09-01 2000-09-01 Halbleiterbauelement als verzögerungselement und verwendung eines halbleiterbauelementes

Country Status (2)

Country Link
DE (1) DE19941684B4 (de)
WO (1) WO2001017025A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856581B1 (en) 2000-10-31 2005-02-15 International Business Machines Corporation Batteryless, oscillatorless, binary time cell usable as an horological device with associated programming methods and devices
US7630941B2 (en) 2000-10-31 2009-12-08 International Business Machines Corporation Performing horological functions in commercial transactions using time cells
DE10108913A1 (de) 2001-02-23 2002-09-12 Infineon Technologies Ag Zeiterfassungsvorrichtung und Zeiterfassungsverfahren unter Verwendung eines Halbleiterelements
JP2005536048A (ja) * 2002-08-13 2005-11-24 ジェネラル・セミコンダクター・インコーポレーテッド プログラム可能なしきい値電圧を有するｄｍｏｓ装置
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
FR2926400A1 (fr) * 2008-01-11 2009-07-17 St Microelectronics Rousset Cellule eeprom a perte de charges

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555571A (en) * 1978-10-17 1980-04-23 Sanyo Electric Co Ltd Semiconductor non volatile memory
WO1990016085A1 (en) * 1989-06-21 1990-12-27 Xicor, Inc. Apparatus and method for a dual thickness dielectric floating gate memory cell
US5674768A (en) * 1995-03-22 1997-10-07 Hyundai Electronics Industories Co., Ltd. Method of making flash EEPROM cell having first and second floating gates
US5760644A (en) * 1995-10-25 1998-06-02 Nvx Corporation Integrated circuit timer function using natural decay of charge stored in a dielectric
WO1999007000A2 (en) * 1997-08-01 1999-02-11 Saifun Semiconductors Ltd. Two bit eeprom using asymmetrical charge trapping

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485423A (en) * 1994-10-11 1996-01-16 Advanced Micro Devices, Inc. Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US5481492A (en) * 1994-12-14 1996-01-02 The United States Of America As Represented By The Secretary Of The Navy Floating gate injection voltage regulator
US5687118A (en) * 1995-11-14 1997-11-11 Programmable Microelectronics Corporation PMOS memory cell with hot electron injection programming and tunnelling erasing
US5856946A (en) * 1997-04-09 1999-01-05 Advanced Micro Devices, Inc. Memory cell programming with controlled current injection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555571A (en) * 1978-10-17 1980-04-23 Sanyo Electric Co Ltd Semiconductor non volatile memory
WO1990016085A1 (en) * 1989-06-21 1990-12-27 Xicor, Inc. Apparatus and method for a dual thickness dielectric floating gate memory cell
US5674768A (en) * 1995-03-22 1997-10-07 Hyundai Electronics Industories Co., Ltd. Method of making flash EEPROM cell having first and second floating gates
US5760644A (en) * 1995-10-25 1998-06-02 Nvx Corporation Integrated circuit timer function using natural decay of charge stored in a dielectric
WO1999007000A2 (en) * 1997-08-01 1999-02-11 Saifun Semiconductors Ltd. Two bit eeprom using asymmetrical charge trapping

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MONTALVO A J ET AL: "IMPROVED FLOATING-GATE DEVICES USING STANDARD CMOS TECHNOLOGY", IEEE ELECTRON DEVICE LETTERS,US,IEEE INC. NEW YORK, vol. 14, no. 8, 1 August 1993 (1993-08-01), pages 372 - 374, XP000418574, ISSN: 0741-3106 *
PATENT ABSTRACTS OF JAPAN vol. 004, no. 087 (E - 016) 21 June 1980 (1980-06-21) *

Also Published As

Publication number Publication date
DE19941684B4 (de) 2004-08-26
DE19941684A1 (de) 2001-04-05
WO2001017025A2 (de) 2001-03-08

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