AU2001269469A1 - Single crystal wafer and solar battery cell - Google Patents

Single crystal wafer and solar battery cell

Info

Publication number
AU2001269469A1
AU2001269469A1 AU2001269469A AU2001269469A AU2001269469A1 AU 2001269469 A1 AU2001269469 A1 AU 2001269469A1 AU 2001269469 A AU2001269469 A AU 2001269469A AU 2001269469 A AU2001269469 A AU 2001269469A AU 2001269469 A1 AU2001269469 A1 AU 2001269469A1
Authority
AU
Australia
Prior art keywords
single crystal
battery cell
solar battery
crystal wafer
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU2001269469A
Other versions
AU2001269469B2 (en
Inventor
Tatsuo Ito
Koichi Kanaya
Tadahiro Ohmi
Shigetoshi Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000208870A external-priority patent/JP3910004B2/en
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of AU2001269469A1 publication Critical patent/AU2001269469A1/en
Application granted granted Critical
Publication of AU2001269469B2 publication Critical patent/AU2001269469B2/en
Anticipated expiration legal-status Critical
Expired legal-status Critical Current

Links

AU2001269469A 2000-07-10 2001-07-06 Single crystal wafer and solar battery cell Expired AU2001269469B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-208870 2000-07-10
JP2000208870A JP3910004B2 (en) 2000-07-10 2000-07-10 Semiconductor silicon single crystal wafer
PCT/JP2001/005892 WO2002005335A1 (en) 2000-07-10 2001-07-06 Single crystal wafer and solar battery cell

Publications (2)

Publication Number Publication Date
AU2001269469A1 true AU2001269469A1 (en) 2002-04-18
AU2001269469B2 AU2001269469B2 (en) 2006-11-02

Family

ID=18705372

Family Applications (2)

Application Number Title Priority Date Filing Date
AU6946901A Pending AU6946901A (en) 2000-07-10 2001-07-06 Single crystal wafer and solar battery cell
AU2001269469A Expired AU2001269469B2 (en) 2000-07-10 2001-07-06 Single crystal wafer and solar battery cell

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU6946901A Pending AU6946901A (en) 2000-07-10 2001-07-06 Single crystal wafer and solar battery cell

Country Status (9)

Country Link
US (1) US7459720B2 (en)
EP (1) EP1302976B1 (en)
JP (1) JP3910004B2 (en)
KR (1) KR100804247B1 (en)
CN (1) CN1217380C (en)
AU (2) AU6946901A (en)
DE (1) DE60139258D1 (en)
TW (1) TW527635B (en)
WO (1) WO2002005335A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003056622A1 (en) * 2001-12-26 2003-07-10 Tokyo Electron Limited Substrate treating method and production method for semiconductor device
JP2003257984A (en) * 2002-03-05 2003-09-12 Sumitomo Mitsubishi Silicon Corp Silicon wafer and its manufacturing method
JP2004319909A (en) * 2003-04-18 2004-11-11 Tadahiro Omi Mask for electron beam exposure and its forming method
JP4407188B2 (en) 2003-07-23 2010-02-03 信越半導体株式会社 Silicon wafer manufacturing method and silicon wafer
JP5124189B2 (en) * 2007-07-11 2013-01-23 シャープ株式会社 Method for manufacturing photoelectric conversion element
JP2010251667A (en) * 2009-04-20 2010-11-04 Sanyo Electric Co Ltd Solar cell
JP5485060B2 (en) * 2010-07-28 2014-05-07 三洋電機株式会社 Manufacturing method of solar cell
JP6091108B2 (en) * 2012-08-03 2017-03-08 アズビル株式会社 Silicon tube manufacturing method
JP6502399B2 (en) * 2017-02-06 2019-04-17 Ｊｘ金属株式会社 Single crystal silicon sputtering target
JP6546953B2 (en) 2017-03-31 2019-07-17 Ｊｘ金属株式会社 Sputtering target-backing plate assembly and method for manufacturing the same
CN111364097A (en) * 2020-04-15 2020-07-03 晶科能源有限公司 Monocrystalline silicon seed crystal, silicon ingot, silicon block and silicon wafer of directionally solidified ingot casting, and preparation method and application thereof

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925107A (en) * 1974-11-11 1975-12-09 Ibm Method of stabilizing mos devices
JPS5389367A (en) * 1977-01-18 1978-08-05 Hitachi Cable Ltd Substrate crystal for semiconductor epitaxial growth
US4255212A (en) * 1979-07-02 1981-03-10 The Regents Of The University Of California Method of fabricating photovoltaic cells
JPS56109896A (en) 1980-02-01 1981-08-31 Hitachi Ltd Semiconductor single crystal and its growing method
JPS58128775A (en) * 1982-01-28 1983-08-01 Toshiba Corp Solar cell and its manufacture
JPS6265996A (en) 1985-09-18 1987-03-25 Toshiba Corp Production of compound semiconductor crystal
JPS62226891A (en) * 1986-03-28 1987-10-05 Shin Etsu Handotai Co Ltd Substrate for semiconductor device
US4824489A (en) * 1988-02-02 1989-04-25 Sera Solar Corporation Ultra-thin solar cell and method
JPH02180796A (en) * 1988-12-29 1990-07-13 Sharp Corp Production of silicon carbide single crystal
JPH02133926A (en) * 1988-11-15 1990-05-23 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPH0355822A (en) * 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd Manufacture of substrate for forming semiconductor element
JPH0361634A (en) 1989-07-27 1991-03-18 Honda Motor Co Ltd Control for control valve of on-vehicle engine
US5067985A (en) * 1990-06-08 1991-11-26 The United States Of America As Represented By The Secretary Of The Air Force Back-contact vertical-junction solar cell and method
JPH08760B2 (en) * 1991-03-14 1996-01-10 信越半導体株式会社 Quality inspection method for silicon wafers
JPH0590117A (en) * 1991-09-27 1993-04-09 Toshiba Corp Single crystal thin film semiconductor device
JPH05343321A (en) * 1992-06-08 1993-12-24 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor substrate and manufacture thereof
JP3081706B2 (en) * 1992-06-12 2000-08-28 株式会社東芝 Substrate for semiconductor device
JPH06265996A (en) * 1993-03-12 1994-09-22 Canon Inc Camera
JP3634400B2 (en) * 1994-04-18 2005-03-30 セイコーエプソン株式会社 Balloon fluid discharge device and method for manufacturing the same
JP2789301B2 (en) 1994-07-21 1998-08-20 住友シチックス株式会社 Semiconductor substrate and manufacturing method thereof
JPH0888272A (en) * 1994-09-19 1996-04-02 Shin Etsu Handotai Co Ltd Manufacture of substrate for semiconductor integrated circuit
CA2172233C (en) * 1995-03-20 2001-01-02 Lei Zhong Slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure
CN1089486C (en) * 1995-06-26 2002-08-21 精工爱普生株式会社 Method of formation of crystalline semiconductor film, method of production of thin-film transistor, method of production of solar cell, and active matrix type liquid crystal device
JP3397968B2 (en) 1996-03-29 2003-04-21 信越半導体株式会社 Slicing method of semiconductor single crystal ingot
JP3351679B2 (en) * 1996-05-22 2002-12-03 株式会社リコー Method for manufacturing polycrystalline silicon thin film laminate and silicon thin film solar cell
JP3813740B2 (en) * 1997-07-11 2006-08-23 Ｔｄｋ株式会社 Substrates for electronic devices
FR2769640B1 (en) * 1997-10-15 1999-12-17 Sgs Thomson Microelectronics IMPROVING THE MECHANICAL STRENGTH OF A MONOCRYSTALLINE SILICON WAFER
JPH11162859A (en) * 1997-11-28 1999-06-18 Canon Inc Liquid phase growth of silicon crystal and manufacture of solar battery using the same
JPH11162973A (en) 1997-11-28 1999-06-18 Nec Corp Manufacture of semiconductor device
JP2000150512A (en) * 1998-04-06 2000-05-30 Tadahiro Omi Silicon nitride film, formation method therefor, and semiconductor device
JP3456143B2 (en) * 1998-05-01 2003-10-14 信越半導体株式会社 Laminated materials and optical functional devices
JP3255114B2 (en) * 1998-06-18 2002-02-12 信越半導体株式会社 Method for producing nitrogen-doped low defect silicon single crystal
JP4397491B2 (en) * 1999-11-30 2010-01-13 財団法人国際科学振興財団 Semiconductor device using silicon having 111 plane orientation on surface and method of forming the same
JP4084916B2 (en) * 2000-06-21 2008-04-30 株式会社東洋新薬 Antihypertensive food containing raw material derived from wheat
US6547875B1 (en) * 2000-09-25 2003-04-15 Mitsubishi Materials Silicon Corporation Epitaxial wafer and a method for manufacturing the same

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