WO2001008219A1 - Module semi-conducteur - Google Patents

Module semi-conducteur Download PDF

Info

Publication number
WO2001008219A1
WO2001008219A1 PCT/DE2000/002354 DE0002354W WO0108219A1 WO 2001008219 A1 WO2001008219 A1 WO 2001008219A1 DE 0002354 W DE0002354 W DE 0002354W WO 0108219 A1 WO0108219 A1 WO 0108219A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor module
support plate
metal support
module according
substrates
Prior art date
Application number
PCT/DE2000/002354
Other languages
German (de)
English (en)
Inventor
Manfred Loddenkötter
Original Assignee
eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG filed Critical eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG
Publication of WO2001008219A1 publication Critical patent/WO2001008219A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/142—Arrangements of planar printed circuit boards in the same plane, e.g. auxiliary printed circuit insert mounted in a main printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09018—Rigid curved substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09745—Recess in conductor, e.g. in pad or in metallic substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components

Definitions

  • the invention relates to a semiconductor module consisting of a metal carrier plate with an upper surface and a lower surface, a heat sink on which the metal carrier plate is fastened via its lower surface, at least one heat-conducting and electrically insulating substrate which fastens on the upper surface of the metal carrier plate is, as well as several semiconductor components that are applied to the substrate.
  • Such semiconductor modules are generally known. In order to protect semiconductor modules from being destroyed by the resulting heat loss, good heat-conductive contact between the metal carrier plates and the heat sinks is required.
  • the metal support plate of the semiconductor module is designed in relation to the flat surface of the heat sink as a convexly curved surface, preferably as a spherical surface, so that when the metal support plate is fixed to the side of the heat sink in question, the metal support plate is pressed and fixed to the heat sink under mechanical tension becomes.
  • this convex design of the metal support plate has proven to be advantageous.
  • a known method for convex deformation of the metal support plate is e.g. described in DE 39 40 933 AI
  • metal support plates made of copper with a base area of up to 60 x 120 mm can still be formed with a thickness of 3 mm. Contours and recesses required in the metal carrier plate are punched. Convex surface profiles are produced by bending dies.
  • this object is achieved by a semiconductor module of the type mentioned at the outset, which is characterized in that one or more recesses are made in the metal carrier plate.
  • the mechanical stresses between the ceramic substrate and the metal support plate are drastically reduced when mounted on the heat sink.
  • the segments formed by the recesses can be individually convexly deformed, so that there is no danger that the ceramic substrates located in the modules will be destroyed by different coefficients of thermal expansion. This makes it possible to manufacture semiconductor modules that have a very inexpensive transition resistance.
  • the size of the segments can be determined by a corresponding number of recesses, so that the size of the metal support plate can, in principle, be of any size.
  • Another advantage of the invention consists in cost-effective manufacturing processes and materials.
  • a plurality of substrates which are preferably metallized on both sides, on the one hand to facilitate assembly on the metal support plate and on the other hand to be able to apply the semiconductor components in a structured manner, are fastened to the upper surface of the metal support plate.
  • the attachment is preferably carried out via a soft solder layer.
  • ⁇ X ⁇ x ⁇ T x 1
  • ⁇ X denotes the difference of the linear expansion and ⁇ the difference of the linear expansion coefficients of the ceramic substrate and the metal support plate
  • ⁇ T the temperature difference of the arrangement between the melting temperature of the solder and the room temperature and 1 die Long of the ceramic substrate to be applied
  • a solder In order to keep the difference in temperature as low as possible during the soldering process and after the arrangement has cooled, a solder must be used which has a low melting temperature, but on the other hand is not so low that the heat of loss which occurs later when the semiconductor module is in operation dissolves the solder melts. Melting temperatures of approx. 180 ° C are common. However, this measure is no longer sufficient if larger ceramic substrates are to be used, since the ceramic substrate lengths 1 likewise enter into the relationship for the difference in the linear expansion of two different materials. It is therefore very convenient to use several smaller ceramic substrates instead of a single large ceramic substrate in order to dimension the length 1 as desired.
  • the size of the ceramic substrates is advantageously adapted to the size or shape of the segments formed by the recess.
  • Gaps are then typically provided between the individual ceramic substrates.
  • the individual ceramic substrates it is also conceivable for the individual ceramic substrates to be soldered onto the metal carrier plate in abutting fashion.
  • the configurations of the segments are adapted to the arrangement of the holes in the metal support plate for attachment to the heat sink.
  • a screw is provided adjacent to opposite edges of the metal carrier plate between two recesses and / or between a recess and the adjacent, parallel edge.
  • FIG. 1 shows a schematic illustration of a section through a semiconductor module according to the present invention
  • FIG. 2 shows a plan view of the semiconductor module according to FIG. 1,
  • Figure 3 is a plan view of an alternative semiconductor module
  • Figure 4 is a plan view of a further semiconductor module.
  • the basic structure of a semiconductor module 1 shown in FIG. 1 consists of a metal carrier plate 2
  • the metal carrier plate 2 is divided into three segments I, II, III by means of two recesses 12 (shown in broken lines). In the present example, each segment I, II, III carries a substrate 4.
  • the metal carrier plate 2 has an upper surface 11 and a lower surface 10.
  • the metal support plate 2 rests with its lower surface 10 on a heat sink 8 and is screwed (not shown) onto the cooling element. screwed on by 8.
  • Each segment I, II, III of the metal support plate 2 has a lower surface 10 which is convex with respect to the heat sink 8.
  • On the upper surface 11 there are the three thermally highly conductive, electrically insulating substrates 4, between which there are gaps 13 s.
  • the substrates 4 are connected to the upper surface 11 of the metal support plate 2 by a soft solder layer 3.
  • Semiconductor components 6 are in turn fastened on the upper side of the substrate 6 via soft solder layers 5. These can be connected to housing connections (not shown).
  • the top sides of the semiconductor components 6 are typically connected to one another via bond connections (not shown).
  • the recesses 12 in the metal support plate 2 By introducing the recesses 12 in the metal support plate 2, the mechanical stresses between the ceramic substrates 4 and the metal support plate 2 are significantly reduced during assembly on the heat sink 8. At the same time, good thermal properties are guaranteed.
  • the recesses can accommodate excess thermal paste, so that a further improvement in the transition resistance can be achieved.
  • the corresponding number and size of recesses can in principle be used to make the metal support plate any size without mechanical stresses occurring.
  • the thickness of the metal support plate can be chosen to be small (eg 3 mm), regardless of the size, since there is no need for exciting machining to produce the convex surface. It is therefore a considerable material and compared to the prior art for a large metal support plate Cost savings possible because the metal carrier plate with common manufacturing processes for large series, z. B. can be produced by stamping and shaping.
  • a segment of the metal support plate 2 has a much greater length than its width, a convex deformation in the longitudinal direction may not suffice.
  • a convex deformation in both the longitudinal and transverse directions is very advantageous.
  • a segment typically has the shape of a spherical cap.
  • FIG. 2 shows a plan view of the semiconductor module according to the invention according to FIG. 1.
  • the recesses 12 divide the area of the metal support plate 2 into three segments I, II, III of approximately the same size.
  • Each segment has two bores 7 lying adjacent to the edges 13b, 13d.
  • the bores 7 are advantageously arranged centrally in the respective segment with respect to the segment edge.
  • each segment contains only one substrate 4. However, it is also conceivable that one segment accommodates several substrates.
  • FIG. 3 shows a further exemplary embodiment of a top view of the semiconductor module according to the invention.
  • 7 recesses 12 are provided which divide the surface of the metal support plate 2 into six segments I ... VI of approximately the same size.
  • the recesses 12 are designed as elongated slots which are introduced in the longitudinal and transverse directions, ie approximately parallel to the edges of the metal carrier plate.
  • the recesses end adjacent to the edges 13a ... 13d.
  • Defined elastic points A are thus created along the edges.
  • Such elastic points B are likewise in the interior of the metal carrier plate 2 formed the intersection of the imaginary extensions of the recesses 12.
  • the arrangement of the bores 7 is chosen in accordance with FIG. 2.
  • FIG. 4 shows a further exemplary embodiment in which the bores 7 are placed adjacent to the corner points of the ceramic.
  • larger substrates can be used in the respective segments compared to FIG. 3 without changing the external dimensions of the metal carrier plate.
  • eight holes are provided, three substrates being applied in each segment.
  • the metal carrier plate 2 has a length of 162 mm and a width of 122 mm. Its thickness is 3 mm.
  • two recesses at a distance of 54 mm from one another then run symmetrically on the lower surface of the metal carrier plate in the transverse direction. The recesses end a few millimeters in front of the respective edges of the metal carrier plate.
  • Such a metal support plate is then attached to the heat sink, for example by six screws.
  • the exemplary embodiments shown in the figures are usually used in a plastic housing. This is filled with a casting compound in order to ensure mechanical stability of bond connections of the semiconductor components and to increase the insulation capability.
  • the plastic frame is advantageously designed such that struts (on the plastic frame) cover the recesses.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne des modules semi-conducteurs (1) comprenant une plaque support métallique (2), un corps de refroidissement (8), au moins un substrat céramique (4) et plusieurs composants semi-conducteurs (6). Pour réduire considérablement les contraintes mécaniques entre le substrat céramique et la plaque support métallique lors du montage sur le corps de refroidissement, on réalise des emplacements élastiques définis en pratiquant des évidements dans la plaque support métallique (2) afin de former des petits segments. Cela permet d'utiliser des plaques support métalliques de grandes dimensions même pour une faible épaisseur.
PCT/DE2000/002354 1999-07-23 2000-07-19 Module semi-conducteur WO2001008219A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19934729 1999-07-23
DE19934729.8 1999-07-23

Publications (1)

Publication Number Publication Date
WO2001008219A1 true WO2001008219A1 (fr) 2001-02-01

Family

ID=7915904

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/002354 WO2001008219A1 (fr) 1999-07-23 2000-07-19 Module semi-conducteur

Country Status (1)

Country Link
WO (1) WO2001008219A1 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003021680A2 (fr) * 2001-09-01 2003-03-13 Eupec Gmbh Module de puissance a semi-conducteur
EP1420445A1 (fr) * 2001-08-23 2004-05-19 Dowa Mining Co., Ltd. Plaque de rayonnement et module semi-conducteur de puissance, boitier de circuit integre
EP1501127A2 (fr) * 2003-07-23 2005-01-26 Semikron Elektronik GmbH Patentabteilung Module semiconducteur de puissance avec plaque de base résistante à la flexion
DE102006011995B3 (de) * 2006-03-16 2007-11-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit segmentierter Grundplatte
DE102006045939A1 (de) * 2006-09-28 2008-04-10 Infineon Technologies Ag Leistungshalbleitermodul mit verbesserter Temperaturwechselstabilität
EP2447990A1 (fr) * 2010-11-02 2012-05-02 ABB Technology AG Plaque de base
US8237260B2 (en) 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
WO2013004455A1 (fr) * 2011-06-16 2013-01-10 Osram Ag Procédé de fabrication d'un dispositif d'éclairage et dispositif d'éclairage
AT14114U1 (de) * 2013-09-20 2015-04-15 Mikroelektronik Ges Mit Beschränkter Haftung Ab Trägerplatte für ein Leistungselektronikmodul
EP2725609A4 (fr) * 2011-06-27 2015-06-17 Rohm Co Ltd Module à semi-conducteurs
WO2015091117A1 (fr) * 2013-12-20 2015-06-25 Koninklijke Philips N.V. Module laser ayant un alignement simplifié
US9519159B1 (en) 2015-11-12 2016-12-13 Joseph Scott King Hunting visored eye shield
US9929066B1 (en) 2016-12-13 2018-03-27 Ixys Corporation Power semiconductor device module baseplate having peripheral heels
DE102010063455B4 (de) * 2009-12-18 2020-10-08 Cree, Inc. Halbleitergehäuse, Verfahren zum Herstellen eines Halbleitergehäuses und Verfahren zum Herstellen einer Substratanordnung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508560A (en) * 1993-11-08 1996-04-16 Eupec Europaeische Gesellschaft Fuer Leistungs-Halbletter Mbh & Co. Kg Semiconductor module
US5652185A (en) * 1995-04-07 1997-07-29 National Semiconductor Corporation Maximized substrate design for grid array based assemblies
DE19609929A1 (de) * 1996-03-14 1997-09-18 Ixys Semiconductor Gmbh Leistungshalbleitermodul
DE19707514A1 (de) * 1997-02-25 1998-08-27 Eupec Gmbh & Co Kg Halbleitermodul
US5854741A (en) * 1995-11-17 1998-12-29 Amkor Electronics, Inc. Unit printed circuit board carrier frame for ball grid array semiconductor packages and method for fabricating ball grid array semiconductor packages using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508560A (en) * 1993-11-08 1996-04-16 Eupec Europaeische Gesellschaft Fuer Leistungs-Halbletter Mbh & Co. Kg Semiconductor module
US5652185A (en) * 1995-04-07 1997-07-29 National Semiconductor Corporation Maximized substrate design for grid array based assemblies
US5854741A (en) * 1995-11-17 1998-12-29 Amkor Electronics, Inc. Unit printed circuit board carrier frame for ball grid array semiconductor packages and method for fabricating ball grid array semiconductor packages using the same
DE19609929A1 (de) * 1996-03-14 1997-09-18 Ixys Semiconductor Gmbh Leistungshalbleitermodul
DE19707514A1 (de) * 1997-02-25 1998-08-27 Eupec Gmbh & Co Kg Halbleitermodul

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1420445A1 (fr) * 2001-08-23 2004-05-19 Dowa Mining Co., Ltd. Plaque de rayonnement et module semi-conducteur de puissance, boitier de circuit integre
EP1420445A4 (fr) * 2001-08-23 2009-04-08 Dowa Metaltech Co Ltd Plaque de rayonnement et module semi-conducteur de puissance, boitier de circuit integre
US8227913B2 (en) 2001-09-01 2012-07-24 Infineon Technologies Ag Power semiconductor module comprising elastic housing for accommodating movement of individual substrate regions on a heat sink
WO2003021680A3 (fr) * 2001-09-01 2008-02-07 Eupec Gmbh Module de puissance a semi-conducteur
WO2003021680A2 (fr) * 2001-09-01 2003-03-13 Eupec Gmbh Module de puissance a semi-conducteur
EP1501127A2 (fr) * 2003-07-23 2005-01-26 Semikron Elektronik GmbH Patentabteilung Module semiconducteur de puissance avec plaque de base résistante à la flexion
EP1501127A3 (fr) * 2003-07-23 2007-10-24 SEMIKRON Elektronik GmbH & Co. KG Module semiconducteur de puissance avec plaque de base résistante à la flexion
DE102006011995B3 (de) * 2006-03-16 2007-11-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit segmentierter Grundplatte
DE102006045939A1 (de) * 2006-09-28 2008-04-10 Infineon Technologies Ag Leistungshalbleitermodul mit verbesserter Temperaturwechselstabilität
US7910952B2 (en) 2006-09-28 2011-03-22 Infineon Technologies Ag Power semiconductor arrangement
DE102006045939B4 (de) * 2006-09-28 2021-06-02 Infineon Technologies Ag Leistungshalbleitermodul mit verbesserter Temperaturwechselstabilität
US8237260B2 (en) 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
DE102010063455B4 (de) * 2009-12-18 2020-10-08 Cree, Inc. Halbleitergehäuse, Verfahren zum Herstellen eines Halbleitergehäuses und Verfahren zum Herstellen einer Substratanordnung
CN102456640B (zh) * 2010-11-02 2016-06-01 Abb技术有限公司 基板
EP2447990A1 (fr) * 2010-11-02 2012-05-02 ABB Technology AG Plaque de base
US8897015B2 (en) 2010-11-02 2014-11-25 Abb Technology Ag Base plate
CN102456640A (zh) * 2010-11-02 2012-05-16 Abb技术有限公司 基板
US9488344B2 (en) 2011-06-16 2016-11-08 Osram Gmbh Method for producing a lighting device and lighting device
CN103608941A (zh) * 2011-06-16 2014-02-26 欧司朗有限公司 用于制造发光装置的方法和发光装置
WO2013004455A1 (fr) * 2011-06-16 2013-01-10 Osram Ag Procédé de fabrication d'un dispositif d'éclairage et dispositif d'éclairage
US9129932B2 (en) 2011-06-27 2015-09-08 Rohm Co., Ltd. Semiconductor module
EP2725609A4 (fr) * 2011-06-27 2015-06-17 Rohm Co Ltd Module à semi-conducteurs
AT14114U1 (de) * 2013-09-20 2015-04-15 Mikroelektronik Ges Mit Beschränkter Haftung Ab Trägerplatte für ein Leistungselektronikmodul
WO2015091117A1 (fr) * 2013-12-20 2015-06-25 Koninklijke Philips N.V. Module laser ayant un alignement simplifié
US9882346B2 (en) 2013-12-20 2018-01-30 Koninklijke Philips N.V. Laser module with simplified alignment
US9519159B1 (en) 2015-11-12 2016-12-13 Joseph Scott King Hunting visored eye shield
US9929066B1 (en) 2016-12-13 2018-03-27 Ixys Corporation Power semiconductor device module baseplate having peripheral heels

Similar Documents

Publication Publication Date Title
DE19707514C2 (de) Halbleitermodul
DE10066446B4 (de) Verfahren zur Herstellung eines elektronischen Bauteils mit zwei Abstrahlungsbauteilen
DE69635518T2 (de) Kunststoffpackung für elektronische Anordnungen
DE4338107C1 (de) Halbleiter-Modul
WO2001008219A1 (fr) Module semi-conducteur
EP2566308B1 (fr) Procédé d'équipement d'une plaquette
DE102012201172B4 (de) Verfahren zur Herstellung eines Leistungshalbleitermoduls mit geprägter Bodenplatte
DE3315583A1 (de) Ein elektrisches bauteil tragendes, gut kuehlbares schaltungsmodul
EP1938373A2 (fr) Composant de circuit integre dote d'un systeme de refroidissement
EP0805492B1 (fr) Substrat métal céramique cintré en voûte
DE10335622A1 (de) Harzversiegelte Halbleiterbaugruppe
DE3940933C2 (de) Verfahren zum Verformen einer Basisplatte für Halbleitermodule und Vorrichtung zum Durchführen des Verfahrens
DE10337640A1 (de) Leistungshalbleitermodul mit verbessertem thermischen Kontakt
EP1631988B1 (fr) Module semi-conducteur de puissance
EP0632684B1 (fr) Procédé de fabrication d'un substrat métal-céramique
DE4444680A1 (de) Mehrfachsubstrat für elektrische Bauelemente, insbesondere für Leistungs-Bauelemente
DE3922485C1 (fr)
DE19614501C2 (de) Verfahren zum Herstellen eines Keramik-Metall-Substrates sowie Keramik-Metall-Substrat
DE4338706A1 (de) Mehrschicht-Substrat
DE19615481B4 (de) Gewölbtes Metall-Keramik-Substrat
DE2249209A1 (de) Leiterrahmen zur verwendung in gehaeusen fuer halbleiterbauelemente
DE19931694B4 (de) Verfahren zum Herstellen von elektrischen Schaltkreisen oder Modulen sowie elektrischer Schaltkreis oder elektrisches Modul hergestellt nach diesem Verfahren
DE10331453B4 (de) Verfahren zum Erzeugen wenigstens einer Wärmebrücke in einem Substrat
DE19527611B4 (de) Verfahren zum Herstellen eines Substrats für elektrische Schaltkreise
DE3837618A1 (de) Elektrische oder elektronische anordnung

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP