WO2001004985A1

WO2001004985A1 - High-frequency device and method of manufacture thereof

Info

Publication number: WO2001004985A1
Application number: PCT/JP2000/004241
Authority: WO
Inventors: Tsunehisa Marumoto; Ryuichi Iwata; Youichi Ara; Hideki Kusamitsu; Kenichiro Suzuki
Original assignee: Nec Corporation
Priority date: 1999-07-09
Filing date: 2000-06-28
Publication date: 2001-01-18
Also published as: JP2001024401A; TW497293B; JP3379484B2

Abstract

A high-frequency device comprises a multilayer substrate (100); a waveguide (102a) formed on an inner layer (101) of the multilayer substrate (100) to propagate high-frequency signals; a high-frequency moving part (102b) formed on the inner layer and capable of touching the waveguide; a space (113a) formed in an upper part of the high-frequency moving part and located higher than the range of movement of the high-frequency moving part. Thus, the high-frequency moving part can operate in the space, that is, the inner layer can include a high-frequency rotating part.

Description

Description High-frequency device and its manufacturing method

The present invention relates to a high-frequency device for transmitting high-frequency signals, such as a phased array antenna used for transmitting and receiving high-frequency signals such as microphone mouth waves, and a method for manufacturing the same. Background art

As a high-frequency device, for example, a phased array antenna that is used in a satellite tracking on-board antenna and a satellite-mounted antenna and in which many radiating elements are arranged has been proposed (for example, IEICE Technical Report AP 90-75 And Japanese Unexamined Patent Application Publication No. 129301/1992).

This type of phased array antenna has a function of arbitrarily changing the direction of a beam by changing the phase fed to each radiating element. As a means for changing the phase to which the power is fed, a digital phase shifter composed of a plurality of phase shift circuits, each having a different fixed phase shift amount, is generally used (hereinafter referred to as a digital phase shifter). Is simply called a phase shifter). In the phased array antenna, each of the phase shift circuits is turned on and off by a 1-bit digital control signal, and the phase shift amounts of the respective phase shift circuits are combined. To obtain a power supply phase of 0 to 360;

In particular, in the conventional phased array antenna, as a switching element in each phase shift circuit, a semiconductor element such as a PIN diode and a GaAs FET, and a large number of drive circuit components for driving these elements are used. The phase shift circuit generates a predetermined amount of phase shift by applying a DC current or a DC voltage to these switching elements to turn them on and off, and to change a transmission path length, a susceptance, a reflection coefficient, and the like. It has a configuration. On the other hand, in recent years, in the field of low-Earth-orbit satellite communication, communication at a high data rate has been required due to the expansion of Internet use and the spread of multimedia communication. Is needed. In addition, transmission bandwidth must be increased in order to achieve communication at high data rates. In addition, due to the lack of frequency resources in low frequency bands, Ka-band (20 GHz or higher) The realization of an antenna that can be applied in is urgent.

Specifically, as an antenna for a low earth orbit satellite tracking terminal (ground station), for example, frequency: 3 OGHz,

Antenna gain: 36 dBi,

Beam scanning range: Beam tilt angle 50 ° from the front

Technical performance is required.

To achieve this with a phased array antenna, an aperture area of about 0.13 m ² (36 OmmX 36 Omm) is first required. Furthermore, in order to suppress side lobes, it is necessary to arrange radiating elements at intervals of about 1Z2 wavelength (about 5mm at 30GHz) to avoid the generation of grating lobes.

In order to make the beam scanning step finer and to suppress the side lobe degradation due to the quantization error of the digital phase shifter, the phase shift circuit used for each phase shifter has 4 bits (minimum bit shift). Phaser 22.5 °)

The total number of radiating elements and the number of phase shift circuit bits used for the phased array antenna satisfying the above conditions are

Number of phase shift circuit elements: 72 X 72 = about 5000

Number of phase shift circuit bits: 72 x 72 x 4 = approx. 2 000 000 bits

Becomes

Here, an attempt was made to realize such a high-gain, phased-array antenna applicable to a high-frequency band using the above-described conventional technology, for example, the phased-array antenna described in Japanese Patent Application Laid-Open No. 11-290301 shown in FIG. In this case, there were the following problems.

That is, in such a conventional phased array antenna, as shown in FIG. 6, one driver circuit 913 formed on the drive circuit board 910 forms each phase shifter 9 1 Since each of the phase shift circuits in 2 is controlled, it is necessary to individually connect this driver circuit 9 13 and all the phase shift circuits. Therefore, the wiring for the connection is required by the number of radiating elements x the number of phase shift circuit bits, and if the above-mentioned numerical values are applied, in a 72 x 72 radiating element 9 2 1 array arrangement The number of wirings to each phase shift circuit (4 bits) for one row (for radiating elements 921: 72) is 72 x 4 = 288.

When such wiring is formed on the same plane, even if the wiring width / interval (L 7 S) 50 Ζ 50 μππ, wiring for one row (for radiating elements 92 1: 72) The width of the bundle is 0.1 mm X 288 = 28.8 mm.

On the other hand, as described above, in the phased array antenna applicable to the frequency 3 OGHz, the radiating elements 921 need to be arranged at around 5 mm, but in the conventional technology, as described above, The width of the wiring bundle is 28.8 mm, which is too large to be physically placed.

Here, not only the layer on which the radiating element 9 21 is formed (radiating element substrate 9 20) and the layer on which the parasitic element 9 31 is formed (parasitic element substrate 9 30) but also the distributing / combining device 9 If 11 1 and the phase shifter 9 12 are formed in different layers, only the phase shifter 9 12 can be freely arranged in the layer forming the phase shifter 9 12. The problem of the disposition can be solved. In this way, a multi-layer structure can realize a phased array antenna applicable to a higher frequency band.In the case of a multi-layer structure, the thickness of each layer is as small as several meters, so that it is too thick. This is especially advantageous for spaceborne applications, as they can be smaller and take up less area:

By the way, in the high-frequency device as described above, use of a minute mechanical switch element (micro machine switch) as a switch element used when switching the phase shift amount of the phase shifter 912 is being studied. However, in the case of a multilayer structure as described above, since each layer is conventionally filled with a dielectric, a movable portion is provided in a phase shifter formed in an intermediate layer. Could not be used. That is, conventionally, phased array

When a high-frequency device such as a filter has a multilayer structure, the switch used for the phase shifter 9 12 As a switch element, a micromachine switch cannot be used for the inner layer, so that there is a problem in that the mounting is restricted.

The present invention is intended to solve such a problem, and uses a high-frequency movable component having a movable portion such as a micromachine switch for an inner layer in a high-frequency device applied to a high-frequency band with high gain, such as a phased array antenna. The purpose is to improve mounting efficiency. Disclosure of the invention

A high-frequency device according to the present invention includes: a multilayer substrate having a multilayer structure; a waveguide formed on an inner substrate constituting the multilayer substrate and transmitting a high-frequency signal; A high-frequency movable part having a structure, and a space formed above the formation region of the high-frequency movable part and having a height higher than the upper limit of the movable range of the high-frequency movable part.

Here, the space may be formed of an opening region formed in an upper layer of the inner layer substrate. Also, a part of the waveguide may be formed higher than the upper limit of the movable range of the high-frequency movable part, and the space may be formed between the inner substrate and the upper layer of the inner substrate supported on the upper surface of the waveguide. Yeah.

One configuration example of the high-frequency movable component is a switch that switches the connection state of the waveguide. One configuration example of this switch is a fixed electrode disposed on an inner layer substrate, a column disposed apart from the fixed electrode, and one end fixed to the column and the other end positioned above the fixed electrode. This is a micromachine switch including a movable electrode that extends. In this case, the multi-layer substrate includes a first layer formed of the inner layer substrate, a waveguide formed on the inner layer substrate, and a high-frequency movable element. At least a second layer having a component and a third layer having a high-frequency component to which a high-frequency signal propagating through the waveguide is coupled may be provided. Further, the multilayer substrate may further include a coupling layer made of a conductive material and disposed between the second layer and the third layer and provided with coupling means for coupling a high-frequency signal propagating through the waveguide to the high-frequency component. You may. Also, a multi-layer substrate is provided between the second layer and the tie layer. The semiconductor device may further include a first separation layer formed of a dielectric material and a second separation layer formed of a dielectric material disposed between the coupling layer and the third layer.

Further, the inner substrate may be made of a dielectric material. Further, a phase shifter that changes the phase of the high-frequency signal may be configured by the waveguide and the switch. Further, the high frequency component may be constituted by a radiating element. Further, a distribution layer for supplying a high-frequency signal to the waveguide formed on the inner substrate may be provided.

The method of manufacturing a high-frequency device according to the present invention includes a step of forming a waveguide for transmitting a high-frequency signal on a substrate made of a dielectric, and a step of forming a high-frequency movable component having a movable structure that comes into contact with and separates from the waveguide And forming a first separation layer on the substrate so that a space higher than the upper limit of the movable range of the high-frequency movable component is formed above the formation region of the high-frequency movable component. Features.

A step of forming the fixed electrode and the column on the substrate at a distance; and a step of forming a first dielectric layer made of a dielectric material on the substrate so as to cover the fixed electrode with the upper part of the column exposed. Forming, on the first dielectric layer, a movable electrode having one end fixed to the upper part of the column and the other end extending above the fixed electrode; and a movable electrode on the first dielectric layer. Forming a second dielectric layer made of a dielectric material so as to cover the first dielectric layer, forming an opening in the movable electrode formation region in the second and first dielectric layers, Forming a first separation layer composed of a second dielectric layer and a high-frequency movable component composed of a fixed electrode, a column, and a movable electrode on the substrate at the bottom of the opening of the first separation layer. May be provided.

A step of forming the fixed electrode and the column on the substrate at a distance; a step of forming a fourth layer on the substrate so as to cover the fixed electrode with the upper part of the column being exposed; Forming, on the fourth layer, a movable electrode having one end fixed to the upper end and the other end extending above the fixed electrode; and forming a fifth layer on the fourth layer so as to cover the movable electrode. Forming an opening region on a predetermined region of the waveguide in the fifth and fourth layers; and forming a metal layer on the waveguide in the opening region to move the waveguide in the opening region. Forming a higher electrode than the upper limit of the movable range of the pole, removing the fifth and fourth layers, disposing a first separation layer made of a dielectric material on the upper surface of the waveguide, and fixing the fixed electrode and the column. Forming a high-frequency movable part composed of a body and a movable electrode in a space below the first separation layer. You may have a process.

Forming a coupling layer made of a conductive material having coupling means on the first separation layer such that the coupling means is arranged on a predetermined region of the waveguide; and forming a second layer made of a dielectric material on the first separation layer. Forming a separation layer on the second separation layer, and forming a high-frequency component on the second separation layer, where the high-frequency signal propagating through the waveguide is coupled through coupling means. Les ,.

In the method for manufacturing a high-frequency device described above, a phase shifter that changes the phase of a high-frequency signal may be configured by the waveguide and the high-frequency movable component. Further, the high frequency component may be constituted by a radiation element. Forming a distribution layer for supplying a high-frequency signal to the waveguide formed on the substrate. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1A is a cross-sectional view showing a partial configuration of a phased array antenna according to a first embodiment of the high-frequency device of the present invention. FIG. 1B is a micromachine formed on the phase control layer shown in FIG. 1A. FIG. 1C is a cross-sectional view showing the configuration of the switch, and FIG. 1C is a plan view showing one cell portion constituting the phased array antenna.

FIG. 2 is an exploded view for describing the entire configuration of the phased array antenna according to the first embodiment.

FIGS. 3A to 3M are process diagrams showing the manufacturing process of the phased array antenna according to the first embodiment.

FIG. 4A is a cross-sectional view showing a partial configuration of a phased array antenna according to a second embodiment of the high-frequency device of the present invention. FIG. 4B is a sectional view of one cell constituting the phased array antenna. FIG.

5A to 5M are process diagrams showing the steps of manufacturing the phased array antenna according to the second embodiment.

FIG. 6 is an exploded view showing a simple configuration of a conventional phased array antenna. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.

Embodiment 1

First, Embodiment 1 of the present invention will be described. Here, a 30 GHz band phased array antenna is taken as an example of the high-frequency device, and the description will be given with reference to FIG.

In the first embodiment, as shown in the cross-sectional view of FIG. 1A, a phased array antenna is configured by a multilayer substrate 100 having a multilayer structure.

That is, first, a phase control layer (second layer) 102 composed of a plurality of phase shift units is formed on an inner layer substrate (first layer) 101 composed of a dielectric such as glass. ing. These phase shift unit uses a microstrip line (waveguide) 1 0 2 _a and micromachine switch (high-frequency moving parts) 1 0 2 b, and controls the phase of the RF signal.

As shown in FIG. 1B, the micromachine switch 102 b is composed of a fixed electrode 121 and a pillar 122 formed on the substrate 101 at a distance from each other, and the pillar 122. And a movable electrode 123 supported by In the micromachine switch 102b, the operation of the movable electrode 123 is controlled by control means (the drive circuit 102b shown in FIG. 4C), and the movable electrode 123 is connected to the microstrip line 102a. By connecting and disconnecting, the connection state of the microstrip line 102a is switched. Here, the micromachine switch is a microswitch suitable for being integrated by a semiconductor device manufacturing process.

Further, on the phase control layer 102, a separating layer (first separating layer) 113 which is a feature of the present invention, and a connecting layer 10 having a connecting slot (connecting means) 103a are provided. A radiating element layer (third layer) 105 on which a plurality of radiating elements (high-frequency components) are formed is arranged via 3 and a separating layer (second separating layer) 104. A parasitic element layer 107 on which a plurality of parasitic elements are formed is disposed on the radiating element layer 105 via a separating layer (third separating layer) 106. I have. This parasitic element is provided for widening the band, and may be added as needed.

On the other hand, a microstrip line or the like is formed on the back surface of the substrate 101 via a coupling layer 108 having a coupling slot 108a and a separation layer (fourth separation layer) 109. The formed distribution / combination layer 110 is arranged. The distribution / synthesis layer 110 includes a distributor for distributing a high-frequency signal from a power supply unit (not shown) to each of the upper phase shift units. Further, in the example shown in FIG. 1A, a ground layer 111 made of a conductive material is provided below a composite distribution layer 110 through a dielectric isolation layer 111 (fifth isolation layer). Two are provided. The separation layer 111 and the ground layer 112 are provided to suppress unnecessary radiation from the combined distribution layer 110, and may be added as necessary.

Further, as shown in the plan view of FIG. 1C, the phase control layer 102 is configured so that the electrical length of the microstrip line 102a can be switched by the operation of the plurality of micromachine switches 102b. I have.

FIG. 1C shows one cell part constituting a phased array antenna which is a high-frequency device. The signal lines X i 1 and X i 2 from the signal line selection unit (not shown), the scanning lines Y j 1 and Y j 2 from the scanning line selection unit (not shown) A trigger signal line Trg from a control device (not shown) and a drive power supply line VdrV for the switch are arranged. The operation of the micromachine switch 102b is controlled by a drive circuit (control means) 102d connected to these signal lines.

Also, inside these signal lines, the above-mentioned micro-slitzer line 102a is formed so as to connect from the upper position of the force coupling slot 108a to the lower position of the coupling slot 103a. Have been. In the middle of the microstrip line 102a, for example, each phase shift circuit (phase shifter) 102c of 22.5 °, 45 :, 90 °, and 180 ° is configured. Have been. The amount of phase shift of each phase shift circuit 102c is switched by the operation of the micromachine switch 102b, and changes the phase of the high-frequency signal flowing through the microstrip line 102a to a desired value.

In the first embodiment, a separation layer (first separation layer) 113 made of a dielectric material is formed between the phase control layer 102 and the coupling layer 103. In 3, the opening region (movable space) 113a was provided on the region of the phase control layer 102 where the micromachine switch 102b was formed. By setting the thickness of the separation layer 113 to about 0.2 mm, it is possible to secure the movable space of the micromachine switch 102 b. In both cases, a high-frequency signal can be propagated through the microstrip line 102a without any problem.

In the first embodiment, the phase shift unit composed of the phase shift circuit 102c and the radiating element are formed in different layers, but the phase shift unit and the radiating element are formed in the same layer. Well ,. Although the phase shift unit and the distributor are formed in different layers, the phase shift unit and the distributor may be formed in the same layer.

Next, the overall configuration of the fused array antenna will be briefly described. In this phased array antenna, first, a radiating element layer 105 and a parasitic element layer 107 are arranged on a phase control layer 102, as shown in FIG. Further, below the phase control layer 102, the distribution / combination layer 110 is arranged. In such a configuration, for example, the radiating element layer 105 is provided with a separation layer 104 below, and a coupling layer 103 made of, for example, a thin Cu layer on the lower surface thereof. A coupling slot 103a composed of a hole is formed in 03 corresponding to the array. Similarly, the back surface of the phase control layer 102 is provided with a coupling layer 108 made of, for example, a thin Cu layer, and the coupling layer 108 has a coupling slot 108 a corresponding to the array. Have been.

In this arrangement, the phase control layer 102 is provided with wirings X1 to Xm and Y1 to Yn for individually controlling each phase shift unit and these phase shift units. Have been Then, the high-frequency signal from the power supply unit propagates through the strip line of the distribution / combination layer 110 and is supplied to each phase shift unit of the phase control layer 102, where a predetermined power supply phase shift amount is given. The light propagates through the coupling slot 103a of the coupling layer 103 to each radiating element of the radiating element layer 105 and is radiated from each radiating element in a predetermined beam direction. A method for manufacturing the phased array antenna (high-frequency device) according to the first embodiment will be described.

First, a separation layer 113 is formed on a substrate 101 together with a phase control layer 102. The formation of the separation layer 113 will be described, particularly taking the micromachine switch 102b as an example.

First, as shown in FIG. 3A, a fixed electrode forming the micromachine switch 102 b shown in FIG. 1 together with the microstrip line 102 a on the substrate 101. Form poles 1 2 1

Next, as shown in FIG. 3B, a pillar 122 is formed on the end of the microstrip line 102a that is to be paired with the fixed electrode 121.

Next, as shown in FIG. 3C, a dielectric film (first dielectric layer) 310 made of, for example, polyimide is used so that the upper surface of the pillar 122 is exposed and other regions are covered. To form

Next, as shown in FIG. 3D, one end is in contact with the entire upper surface of the pillar 122, and the other end is extended at a predetermined position of the dielectric film 301 so that it extends above the fixed electrode 122. The movable electrodes 1 2 3 are formed.

Next, as shown in FIG. 3E, a dielectric film (second dielectric layer) 302 made of, for example, polyimide is formed on the dielectric film 301 including the movable electrode 123. I do.

Next, as shown in FIG. 3F, an inorganic insulating film 303 made of, for example, silicon oxide is formed on the dielectric film 302.

Next, as shown in FIG. 3G, a resist pattern 304 having an opening 304 a in a region where the above-mentioned movable electrode 123 is formed is formed on the inorganic insulating film 303. You.

Next, using the resist pattern 304 as a mask, the inorganic insulating film 3 33 is selectively etched, and then, the resist pattern 304 is removed, as shown in FIG. 3H. An opening 3 03 a is formed in 03.

Next, the lower dielectric film 302 and the lower dielectric film 301 are selectively etched using the inorganic insulating film 303 in which the opening 303 a is formed as a mask. As shown in FIG. 5, openings 302a and 301a are formed in the dielectric film 302 so that the micromachine switch 102b forming region is exposed. At this time, since the dielectric film 301 under the opening 303 a is removed at the same time, a space is formed below the movable electrode 123, and the fixed electrode 121, the column 122, and the movable A micromachine switch 102 b composed of the electrodes 123 is completed.

Next, if only the inorganic insulating film 303 is selectively removed, the opening region consisting of the dielectric films 301 and 302 shown in FIG. 3I and the openings 310a and 302a is formed. As shown in FIG. 3J, a state in which the separation layer 1 13 having 1 13 a is formed on the substrate 101 is shown in FIG. 3J. can get.

On the other hand, by forming a copper film on the separation layer 109 made of a dielectric material and patterning this copper film, the connection layer 109 having the connection slot 108 a on the separation layer 109 is formed. Form 8. In addition, a conductive material film such as gold is formed on the separation layer 111 made of a dielectric material, and this film is patterned to form a distribution synthesis layer 110 on the separation layer 111. . Further, a ground layer 112 is formed on the back surface of the separation layer 111. Then, as shown in FIG. 3K, the back surface of the separation layer 109 is brought into contact with and bonded to the surface of the separation layer 111 on which the distribution / combination layer 110 is formed to form an integral structure.

Then, the surface of the bonding layer 108 of the integrated structure and the back surface of the substrate 101 are brought into contact with each other via an adhesive film 401, and heated under a predetermined pressure, and FIG. As shown in the figure, the surface of the bonding layer 108 is adhered to the back surface of the substrate 101.

Next, a conductive film made of, for example, Cu is formed on the back surface of the separation layer 104 made of a dielectric, and this film is patterned to form a coupling slot 103 a on the back surface of the separation layer 104. The provided bonding layer 103 is formed. On the surface of the separation layer 104, a radiating element layer 105 is formed. In addition, a parasitic element layer 107 is formed on the separation layer 106. Then, the separation layer 104 and the separation layer 106 are bonded to form an integrated structure. Further, as shown in FIG. 3M, the integrated structure including the separation layers 104 and 106 is fixedly arranged on the separation layer 113 so that the radiating element layer 1102 is formed on the phase control layer 102. Thus, a multilayer structure in which the passive element layer 107 and the passive element layer 107 are arranged is completed.

Embodiment 2

Next, a second embodiment of the present invention will be described.

Also in the second embodiment, as shown in the cross-sectional view of FIG. 4A, a phased array antenna is constituted by a multilayer substrate 500 having a multilayer structure.

First, a microstrip line (waveguide) 502 a and a micromachine switch (high-frequency movable part) 502 b are placed on an inner layer substrate (first layer) 501 made of a dielectric material such as glass. A phase control layer (second layer) 502 composed of a plurality of phase shift units having the following structure is formed. This micromachine switch 502b is the same as in the first embodiment.

Also, on the phase control layer 502, a coupling layer 5 having a coupling slot 503a is provided. A radiating element layer (third layer) 505 on which a plurality of radiating elements (high-frequency components) are formed is arranged via a third layer and a separating layer 504. A parasitic element layer 507 on which a plurality of parasitic elements are formed is arranged on the radiating element layer 505 via a separation layer 506. This parasitic element is provided for widening the band as in the first embodiment described above, and may be added if necessary.

Further, a separation layer 513 made of a dielectric material having a thickness of about 0.1 mm is provided between the phase control layer 502 and the coupling layer 503.

On the other hand, on the backside of the substrate 501, a distributing / combining layer 51 composed of a microstrip line or the like is provided via a coupling layer 508 having a coupling slot 508a and a separation layer 509. 0 is arranged. The distribution / combination layer 5100 includes a distributor that distributes a high-frequency signal from a power supply unit (not shown) to each of the upper phase shift units. Further, in the example shown in FIG. 4A, a ground layer 512 made of a conductive material is provided below the combined distribution layer 510 via a separation layer 511 made of a dielectric. The separation layer 511 and the ground layer 5112 are provided to suppress unnecessary radiation from the combined distribution layer 5110, and may be added as needed.

Further, as shown in FIG. 4B, the phase control layer 502 is formed by a phase shift circuit (phase shifter) 502 c including a plurality of micromachine switches 502 b, thereby forming a microstrip line 502. It is configured such that the electrical length of a can be switched.

FIG. 4B shows one cell portion constituting a phased array antenna which is a high-frequency device. The signal lines X i 1 and X i 2 from the signal line selection unit (not shown), the scanning lines Y j 1 and Y j 2 from the scanning line selection unit (not shown) A trigger signal line Trg from a control device (not shown) and a drive power supply line VdrV for the switch are arranged. The operation of the micromachine switch 502 b is controlled by a drive circuit (control means) 502 d connected to these signal lines.

Inside these signal lines, the microstrip line 502a is configured to connect from the upper position of the coupling slot 508a to the lower position of the coupling slot 503a. I have. In the middle of the microstrip line 502a, for example, phase shift circuits 502c of 22.5 °, 45 °, 90 ′, and 180 ° are formed. Have been. The amount of phase shift of each phase shift circuit 502c is switched by the operation of the micromachine switch 502b, and changes the phase of the high-frequency signal flowing through the microstrip line 102a to a desired value.

In the second embodiment, the microcontroller switch 5 is formed by forming the microstrip line 502 a (the black portion in FIG. 4B) serving as a transmission path of a high-frequency signal in the phase control layer 502 thickly. A space 513a was provided below the separation layer 513 on the region where the 02b was formed. Here, the height force of the space 513a formed by the microstrip line 502a is set to about 0.1 mm.

In such a configuration, a high-frequency signal from the power supply unit propagates to the strip line of the distribution / combination layer 501 and is supplied to each phase shift unit of the phase control layer 502, where a predetermined power supply is provided. The phase shift amount is given, propagates to each radiating element of the radiating element layer 505 via the coupling slot 503a of the coupling layer 503, and is radiated from each radiating element in a predetermined beam direction. You.

Next, a method of manufacturing the phased array antenna (high-frequency device) according to the second embodiment will be described.

First, a phase control layer 502 is formed on a substrate 501. Here, the description will be made by taking the micro machine switch 502 b in particular as an example.

First, as shown in FIG. 5A, a fixed electrode 521 constituting a micromachine switch 502 b shown in FIG. 4 is formed on a substrate 501 together with a microstrip line 502 a.

Next, as shown in FIG. 5B, a pillar 522 is formed on the end of the microstrip line 502 a that is connected to the fixed electrode 52 1.

Next, as shown in FIG. 5C, a dielectric film (fourth layer) 601 made of, for example, polyimide is formed so that the upper surface of the pillars 522 is exposed and covers other regions. .

Next, as shown in FIG. 5D, one end is in contact with the entire area of the upper surface of the pillar 52 2, and the other end is extended at a predetermined position of the dielectric film 61 so that it extends above the fixed electrode 52 1. The movable electrode 5 2 3 is formed.

Next, as shown in FIG. 5E, an example is formed on the dielectric film 61 including the movable electrode 52 3. For example, a dielectric film (fifth layer) 602 made of polyimide is formed.

Next, as shown in FIG. 5F, an inorganic insulating film 603 made of, for example, silicon oxide is formed on the dielectric film 602.

Next, as shown in FIG. 5G, a resist pattern 600 is formed on the inorganic insulating film 603 except on the microstrip line 502 a shown in FIG. 4B (the black portion in FIG. 4B). Form 4.

Next, using the resist pattern 604 as a mask, the inorganic insulating film 603 is selectively etched, and then the resist pattern 604 is removed, as shown in FIG. 0 2 Hard mask with open area on 6a 6

Form 0 3 a.

Next, the lower dielectric film 602 and the dielectric film 601 are selectively etched using the hard mask 603a as a mask, thereby obtaining the dielectric film 602 as shown in FIG. 5I. Open areas 601a and 602a are formed in the areas on the microstrip line 502a at 1,602.

Next, as shown in FIG. 5J, a metal layer 502 aa made of a metal such as copper is formed only on the exposed microstrip line 502 a by, for example, a plating method, and the microstrip is formed. Make the transmission line 502 a thicker.

Next, by removing the dielectric film 602 and the dielectric film 601 together with the hard mask 603a, as shown in FIG. 5K, the fixed electrode 521, the pillar 522, A micromachine switch 502b composed of movable electrodes 523 is completed. Along with the completion of the micromachine switch 502a, a thick microstrip line 502a is formed so that a movable space for the movable electrode 523 is formed above the micromachine switch 502b. The obtained state is obtained.

On the other hand, a copper film is formed on the dielectric separating layer 509, and the copper film is patterned to form a bonding layer 5 having a bonding slot 508a on the separating layer 509. 0 8 is formed. In addition, a conductive material film such as gold is formed on the separation layer 511 made of a dielectric material, and this film is patterned to form the distribution composite layer 510 on the separation layer 511. . In addition, a ground layer 512 is formed on the back surface of the separation layer 511. Then, as shown in FIG. 5L, the back surface of the separation layer 509 and the distribution / combination layer 5110 formation surface of the separation layer 511 Are brought into contact with each other to form an integral structure.

Then, the surface of the bonding layer 508 of the integrated structure and the back surface of the substrate 501 are brought into contact with each other via an adhesive film 801, and heated under a state of applying a predetermined pressure. As shown in the figure, the surface of the bonding layer 508 is adhered to the back surface of the substrate 501. Next, a conductive film made of, for example, Cu is formed on the back surface of the separation layer 504 made of a dielectric, and this is patterned to provide a coupling slot 503a on the back surface of the separation layer 504. A bonding layer 503 is formed. On the surface of the separation layer 504, a radiating element layer 505 is formed. Further, a parasitic element layer 507 is formed over the separation layer 506. Then, the separation layer 504 and the separation layer 506 are bonded to form an integral structure.

Then, the separation layer 5 13 is fixedly arranged on the microstrip line 502 a of the substrate 501, and further, the integrated structure including the separation layers 504 and 506 on the separation layer 5 13 By fixedly disposing the body, a multilayer structure in which the radiating element layer 505 and the parasitic element layer 507 are arranged on the phase control layer 502 as shown in FIG. 4A is formed. . In the first and second embodiments described above, a phased array antenna having a multilayer structure is exemplified as a high-frequency device, and the structure and manufacturing method of a case where a switch having a movable portion in an inner layer is mounted has been described. . However, the high-frequency device of the present invention is not limited to a phased array antenna. For example, the present invention can also be applied to a high-frequency receiving circuit that mounts high-frequency small relays as a number of high-frequency movable components on the inner layer of a multilayer substrate and selectively switches and receives a large number of high-frequency receiving signals, such as diversity reception. In addition, the present invention can be applied to a high-frequency transmission circuit that switches on or off the output of a high-frequency amplifier by switching a high-frequency small relay mounted as a high-frequency movable component on the inner layer of a multilayer substrate. In a high-frequency device mounted on a substrate, a waveguide formed on an inner layer substrate of a multi-layer substrate to propagate a high-frequency signal and a waveguide formed on the inner layer substrate and connected to the waveguide by a movable structure to transmit the high-frequency signal. The high-frequency movable part to be processed is provided between the inner layer substrate and the layer above it to separate the layers, and has a thickness higher than that of the high-frequency movable part and the entire area where the high-frequency movable part is formed. And a separation layer having an opening. With such a configuration, for example, a high-frequency movable component such as a switch performs an operation such as connection Z non-connection in an opening region formed in the separation layer. As a result, according to the present invention, an excellent effect that a high-frequency movable component such as a switch can be used in a high-frequency device applied to a high-gain high-frequency band, such as a phased array antenna, can be obtained.

Further, according to the present invention, in a high-frequency device in which a high-frequency circuit is mounted on a multi-layer substrate, a waveguide formed on an inner layer substrate of the multi-layer substrate to propagate a high-frequency signal; and a waveguide formed on the inner layer substrate and having a movable structure. And a high-frequency movable part that processes high-frequency signals by connecting to the substrate.The height of the waveguide is made higher than the height of the high-frequency movable part, so that the high-frequency movable part is mounted between the inner substrate and the layer above it. I made it.

With such a configuration, a space is formed above the substrate by the waveguide formed high, and a high-frequency movable component such as a switch operates in this space. As a result, according to the present invention, an excellent effect that a high-frequency movable part such as a switch can be used in a high-frequency device applied to a high-frequency band with a high gain, such as a phased array antenna, can be obtained.

Further, according to the present invention, the plurality of waveguides formed on the main surface of the inner substrate constituting the multilayer substrate and transmitting a high-frequency signal, and the movable portion formed on the main surface of the inner substrate and switching the connection state of the waveguide are provided. And a structure disposed between the main surface of the inner layer substrate and the substrate disposed thereon and having a space above the switch forming region.

With this configuration, the switch performs connection / disconnection operations in the space of the structure. As a result, according to the present invention, an excellent effect that a switch can be used in a high-frequency device applied to a high-gain high-frequency band, such as a phased array antenna, can be obtained.

Claims

The scope of the claims

1. a multilayer substrate having a multilayer structure;

A waveguide formed on an inner layer substrate constituting the multilayer substrate and transmitting a high-frequency signal;

A high-frequency movable component formed on the inner substrate and having a movable structure that comes into contact with and separates from the waveguide;

A high-frequency device, comprising: a space formed above the formation region of the high-frequency movable component, the space having a height higher than an upper limit of the movable range of the high-frequency movable component.

2. The high-frequency device according to claim 1, wherein the space comprises an opening region formed in an upper layer of the inner layer substrate.

3. A part of the waveguide is formed higher than the upper limit of the movable range of the high-frequency movable component, and the space is formed between the inner layer substrate and the upper layer of the inner layer substrate supported on the upper surface of the waveguide. 2. The high-frequency device according to claim 1, wherein the high-frequency device is formed.

4. The high-frequency device according to claim 1, wherein the high-frequency movable component is a switch for switching a connection state of the waveguide.

5. The switch comprises: a fixed electrode disposed on the inner layer substrate; a column disposed apart from the fixed electrode; and one end fixed to the column and the other end positioned above the fixed electrode. 5. The high-frequency device according to claim 4, wherein the high-frequency device is a micromachine switch including an extended movable electrode.

6. The high-frequency device according to claim 4, further comprising control means formed on said inner substrate and controlling operation of said switch.

7. The multilayer substrate is

A first layer comprising the inner layer substrate,

A second layer including the waveguide and the high-frequency movable component formed on the inner layer substrate,

2. The high-frequency device according to claim 1, further comprising a third layer including a high-frequency component to which the high-frequency signal propagating through the waveguide is coupled.

8. The multilayer substrate is:

It further comprises a coupling layer made of a conductive material and disposed between the second layer and the third layer, the coupling layer including coupling means for coupling the high-frequency signal propagating through the waveguide to the high-frequency component. The high-frequency device according to claim 7, wherein:

9. The multilayer board

A first separation layer disposed between the second layer and the tie layer and made of a dielectric material;

9. The high-frequency device according to claim 8, further comprising a second separation layer disposed between said coupling layer and said third layer and made of a dielectric material.

10. The high-frequency device according to claim 1, wherein the inner layer substrate is made of a dielectric.

11. The high-frequency device according to claim 4, wherein the waveguide and the switch form a phase shifter that changes a phase of the high-frequency signal.

12. The high-frequency device according to claim 7, wherein the high-frequency component includes a radiating element.

13. The high-frequency device according to claim 1, further comprising a distribution layer that supplies the high-frequency signal to the waveguide formed on the inner layer substrate.

14. a step of forming a waveguide that propagates a high-frequency signal on a substrate made of a dielectric; and a step of forming a high-frequency movable component having a movable structure that comes into contact with and separates from the waveguide on the substrate.

Forming a first separation layer on the substrate so that a space higher than the upper limit of the movable range of the high-frequency movable component is formed above the formation region of the high-frequency movable component. A method for manufacturing a high-frequency device.

15. A step of forming a fixed electrode and a column apart on the substrate,

Forming a first dielectric layer made of a dielectric material on the substrate so as to cover the fixed electrode in a state where the upper portion of the column is exposed;

Forming a movable electrode on the first dielectric layer, one end of which is fixed to the upper part of the pillar and the other end of which extends on the fixed electrode;

Forming a second dielectric layer made of a dielectric material on the first dielectric layer so as to cover the movable electrode;

An opening is formed in the movable electrode formation region in the second and first dielectric layers, and the first separation layer including the first dielectric layer and the second dielectric layer is formed. And forming the high-frequency movable component comprising the fixed electrode, the column, and the movable electrode on the substrate at the bottom of the opening of the first separation layer. 15. The method for manufacturing a high-frequency device according to item 14 above.

16. A step of forming a fixed electrode and a column at a distance on the substrate,

Forming a fourth layer so as to cover the fixed electrode with the upper portion of the pillar exposed on the substrate;

Forming, on the fourth layer, a movable electrode having one end fixed to the upper part of the pillar and the other end extending above the fixed electrode;

Forming a fifth layer on the fourth layer so as to cover the movable electrode, and forming an opening region on a predetermined region of the waveguide in the fifth and fourth layers; Forming a metal layer on the waveguide in the opening region and forming the waveguide in the opening region higher than a movable range upper limit of the movable electrode;

Removing the fifth and fourth layers;

The first separation layer made of a dielectric material is arranged on the upper surface of the waveguide, and the high-frequency movable component including the fixed electrode, the column, and the movable electrode is placed under the first separation layer. 15. The method for manufacturing a high-frequency device according to claim 14, further comprising a step of forming the high-frequency device in the space.

17. A step of forming a coupling layer made of a conductive material provided with coupling means on the first separation layer such that the coupling means is arranged on a predetermined region of the waveguide; Forming a second separation layer consisting of on the tie layer,

Forming a high-frequency component on the second separation layer, the high-frequency component being coupled to the high-frequency signal propagating through the waveguide via the coupling means. Manufacturing method.

18. The high-frequency device according to claim 14, wherein the waveguide and the high-frequency movable component form a phase shifter that changes a phase of the high-frequency signal.

19. The high-frequency device according to claim 17, wherein said high-frequency component is constituted by a radiation element.

20. The high-frequency device according to claim 14, further comprising a step of forming a distribution layer for supplying the high-frequency signal to the waveguide formed on the substrate.