TW497293B - High frequency device and its production method - Google Patents

Abstract

The topic of the present invention is to provide a micro-mechanical switch capable of being operated in the high frequency device with high gain and high frequency band for phase array antenna. The solution comprises forming the partition layer (first partition layer) 113 with dielectric material between phase control layer 102 and layer on top of it and putting the opening field 113a on a formation area of micro-mechanical switch 102b in the phase control layer 102 of the partition layer 113.

Description

497293 V. Description of the invention (1) [Technical field] The present invention relates to a high-frequency device for transmitting high-frequency signals and a manufacturing method thereof. The invention relates to a phase array antenna used for transmitting and receiving high-frequency signals such as microwaves. Above. [Knowledge technology] For high-frequency devices, the general proposal is for a phased array antenna (Phased Array Antenna) equipped with many radiating elements, such as a satellite tracking vehicle antenna and a satellite-mounted antenna (for example, please Table according to the technical report of the Institute of Electronic Information and Communications AP9〇-75 and Japanese Patent Publication No. 1-2903 01). This phase array antenna has a function of arbitrarily changing the beam direction by changing the electrical phase to each radiating element. In terms of changing the phase of the power supply, a digital phase shifter composed of a complex phase shifter circuit with a fixed difference of two and a phase shifter is generally used (the phase shifter is called a phase shifter) ). Then, in the phase array antenna, the above-mentioned phase shifting circuits use the batch (off / off) of each bit (t) and combine the phase shifting circuit with the above-mentioned phase shifting circuit in the entire phase shifter. Get ㈠6Q. Supply = especially the conventional phase display diode (PIN diode), gallium arsenide, and the driving circuit used to drive the P 11 conductor element, such as GaAsFET (Swltchlng) elements Hereby, the switching in each phase shift circuit is added with DC current or DC voltage.

Page 5 497293

V. Description of the invention (2) Off 'and change the transmission distance, susceptance, and reflection coefficient specifically to generate a predetermined phase shift amount. On the other hand, in recent years, in the field of low-level satellite communications, due to the expansion of the application of the Internet and the popularity of multimedia communications, the demand for communications at a high data rate is very high. Therefore, it is necessary to increase the gain of the antenna. In addition, in order to achieve communication with high data transfer rate, the width of the transmission band must be expanded, plus 1 due to the lack of frequency resources in the low frequency band, etc., so it can be applied to antennas in the high frequency band above the potassium band (20GHz ~). To be implemented. Specifically, to be used as the antenna of the low-end satellite tracking terminal (ground station), it must have the following technical performance, for example: Frequency · 30GHz a Chen gain beam scanning range main i A: Γ beam tilt angle to 50 degrees In order to put the above in the phase array line product must be: about 0.13 square meters (second middle school / practice '100 first' open surface). The helmet is 772 feet (36 0 氅 m (mm) X 360 mm). In order to suppress the side lobe (s Ί Η M u,, at about 1/2 wavelength (30GHzT50), the radiation element must be grating The interval of the grating lobe is configured to avoid. In addition, in order to make the beam scan ^ the two-phaser quantization error, the side lobes are dense and will be accompanied by the number shift phase 1§ The circuit system is the lowest, so it is better to be above the range. ′, Bit 70 (minimum bit phase shifter 22 · 5 1 total radiating element used in the early antenna is in a phase that satisfies the above conditions

Page 6 497293

The number of pieces and the number of bits of the phase shift circuit are as follows: Number of phase shift circuit elements · 72 x 72 = about 50,000 phase shift circuit bits: 72 x 72 x 4 = about 20,000 bits Gain can be applied to the high-frequency phase array 2 line 'using the above-mentioned conventional techniques', for example, as shown in Figure 6; 2 × 903 = phase array antenna described in the report as an implementation method The following problems will occur: _T means' In the conventional phase array antenna described above, as shown in FIG. 6 = In order to form a driving circuit 913 using a ⑽ formed on the driving circuit substrate 91Q to control each phase shift The structure of each phase shifting circuit in the device 912, so the drive circuit 913 and all the phase shifting circuits must be individually connected. Therefore, the wiring used for the above connection only needs the number of radiation elements and the number of phase shifting circuits. If the above values are applicable, the wiring number of each phase shifting circuit (4 bits) in the i column (radiating element 921: 72) in the 72 X M radiation element 921 array configuration Becomes 72 > &4; 4 = 288 pieces On the surface, if the wiring width / wiring interval (L / S) = 50/50 micrometers (the width of the wiring bundle of the column part (radiating element 921: 72 parts) becomes 0} milligram χ 288 = 28.8 Millimeters. ', For this' as described above' in a phase array antenna applicable to a frequency of 30 GHz, 'the interval of the radiating elements 921 must be arranged at about 5 millimeters', and in the conventional technology, If the width is 288 milliamps as described above, it will be too thick to be physically configured.

Piece i9 = ', if it is not only the formation layer of the radiation element 921 (radiation element plate 9 to 30), and the formation layer of the non-powered element 931 (the section where the non-powered element is based, / ... will be assigned to the synthesizer 911 and The phase shifter 912 is formed in a different form; only the phase shifter 912 can be used in the formation layer of LLi · 12; II: to overcome the above-mentioned configuration. Therefore, by forming the line: ί;,: Π can now be applied to more When the phase array of the high frequency band is too right and the structure is too thin, the thickness of each layer is several millimeters (㈣ This will not become too thick and the area will be smaller, which is particularly advantageous in the case of halberds in terms of hygiene and time. Switching Ϊ: u In the above-mentioned high-frequency device, it is necessary to explore a switching element using a small mechanical structure. However, in the above-mentioned multi-layer structure, the tricky f 1 comes from the house arranged in the middle. ; 丨 the structure filled with shells, the micro-mechanical parts of the part are $ 35, ^, polyphase 15 cannot be used with a mobile frequency device = hibiscus: that is ?; '' phase array antennas and other high converters as s only There is a problem with the limitation of using micro-mechanical cutting doubles in the inner layer to the actual installation. Changing 7 ° pieces The invention of the invention can be used to solve the above-mentioned high-gain, high-frequency band and other purposes of the f-phase array antenna, which are suitable for moving parts such as mechanical switches: 1 centering will increase the installation efficiency. Used in the inner layer to improve the disclosure of the invention. The high-frequency device of the present invention includes:-a multi-layer substrate with more than 497293 V. Description of the invention (5) layer structure; It is formed in a part of the open area that is higher than the high-frequency movable here. The inner layer and the movable layer include a device. In addition, the substrate is routed and combined with the guide. This layer is formed by forming the fixed electrodes on the upper end of the board above and above the high switching board, and also forming a high-frequency wave path, which can make more wave paths of the combined wave path, and is formed in the component. The high-frequency signal of the inner layer of the multilayer substrate; a high-frequency movable part formed in the movable structure that can be separated from the guided wave path; and an empty upper part of the formation area of the high-frequency movable part; The upper limit of the movable range of the part is still high. ^ @ &Amp; The above-mentioned space can also be formed by being formed on the inner substrate. In addition, the upper limit of the movable range of the guided wave two high-frequency movable parts can also be formed Shape, = formed by the inner substrate and the frequency-requirable component supported on the waveguide.-The fixed electrode of the above switch is spaced from the fixed electrode = = lies on the pillar and the other end extends electrical J = On the inner substrate. The control used to control more actions can make the multilayer substrate include at least the first layer; it has the inner layer formed on the inner layer; zero and the second layer (102,502 / ϋ of the waveguide layer substrate) More package :; the third layer of parts. This layer has a combination of high-frequency transmission that is composed of the conductive material of the guide plate and the transmission of the high-frequency operation. 2- The third layer is combined with the south frequency components. F. The description of the invention (6) The multi-layer substrate further includes an interface and a dielectric layer temporarily placed on the second layer and the bonding layer, and the first sub-μ hybrid layer and the third layer are merged, separated from each other, and a A second separation layer composed of a dielectric material and an internal chip + α hall, which is arranged between the junction and the 〇 リ 礼. The continuous substrate may be made of a dielectric. The guided wave path and the switcher constitute a phase shifter that allows high-frequency $ # 者 ’to be hunted. Also, Gao Yunwen, Du Jie, &#; phase change. The high-frequency shackles are provided to workers / different members, and may also include Menhong K 5 Tigers for forming on a certain layer of the inner layer. —Allocation of the above-mentioned guided wave path—The manufacturing method of the high-frequency device of the present invention is short-lived and poorly connected. It includes the following steps: • It is used to form a substrate on a substrate made of electricity. Named U f Λ, a guided wave path of a still-frequency signal transmitted by the eyebrows; a high-frequency movable with a movable structure separated from the guided wave path by two I ·, = ^ W +-on the substrate; and The first separation layer is formed on the upper part of the formation area of the local frequency movable part by forming an empty board having a height higher than the upper limit of the movable range of the frequency still movable part. In addition, it may further include the following steps: forming a fixed electrode and a pillar spaced apart from each other on the substrate; forming a second dielectric layer made of a dielectric material on the substrate so that the upper part of the pillar is exposed and covering the fixed electrode; ; Forming a movable electrode with one end fixed to the upper part of the pillar and the other end extending to the fixed electrode on the first dielectric negative layer; forming a second dielectric layer composed of a dielectric material covering the movable electrode on the i-th dielectric layer And forming openings in the movable electrode formation region in the second and first electrical layers, and simultaneously forming the first separation layer formed between the first dielectric layer and the second dielectric layer, On the substrate at the bottom of the opening portion of the first separation layer, a high-frequency electrode composed of a fixed electrode, a pillar, and a movable electrode is formed.

Page 10 Ηϋϋ

The fixed electrode step: forming a mutual gate a on the substrate, and forming a red person on the storm board: do L ^ and space the evil and fix the lightning # 爱 V pillar.卩 Shows the upper part of the exposed column: another layer of fixed electricity ^ Κ = 成 will cover the movable electrode No. =; forming an opening area on the predetermined area of the 4th and 2nd road; in the second layer, the movable layer is formed into a metal, and In the opening area, the guide i :: describes and forms; removes the 5th and :: the separation screen, the upper surface is made of a dielectric material on the 4f surface ^ The movable i will be composed of a fixed electrode, a cylinder and a movable electrode ^ Moving parts are formed in the space under the first separation layer. The frequency-combiner can also include the following steps: · The bonding layer composed of the coupling device § = is used to arrange the bonding device on the guide; :: is formed on the first separation layer in the manner of :: f; The t-separation layer sent by the material oblique office is formed on the bonding layer; and the high-frequency component that combines the frequency signal through the coupling device is formed in the second point by the coupling device. In the method, a phase shift for changing the phase of a high-frequency signal may also be constituted by a guide path and movable parts of the same frequency ^ In addition, a high-frequency part may be constituted by a radiating element. Furthermore, the method may further include the following steps: forming a distribution layer for supplying a high-frequency signal to a waveguide formed on the substrate. [Schematic description]

Page 11 V. Description of the invention (8) Figure 1 shows the phase array of the first embodiment of the column antenna according to the present invention, and the phase array is shown in the phase control layer. Figure 1 is shown in Figure B. Figure c is a plan view showing the second phase. Part 2 of the antenna (ce 11), Figure 2 is an exploded view of each. Only the overall structure of the phased array antenna of Example 1 Fig. 3 A ~ qth country Ajr warrior _ process step diagram. It shows the phase array antenna of the first embodiment and its manufacture of the two antennas in two copies: ::: South frequency device of the phase array antenna of the embodiment 2 of the block IV diagram; the 40th series shows the formation of the phase array UL block (CeU) plan view. Process steps ^ 图 第 5_ 系 表 #The manufacturing method of the phase array array of the second embodiment ΓIf 6 is a simple structure exploded view of a conventional phase array antenna. [Best Embodiment of Invention]

1. Less I Every time 'An embodiment of the present invention will be described with reference to the drawings. Only Example 1 will be described first with reference to Example 1 of the present invention. Here, a phase-array antenna in the 30 GHz band serving as a high-frequency device is taken as an example, and it will be described using FIG. 1. In the first embodiment, as shown in the cross-sectional view of Fig. 1a, it is composed of a phase array antenna having a multilayer substrate with a multilayer structure. That is, first, an inner layer made of a dielectric such as glass

Page 12 497293 V. Description of the invention (9) The phase shift unit constructed by the phase unit (unit) is a mechanical switch 1§ (high-frequency movable 0), with a substrate and a column 122, and a micro-mechanical switch Device 102b) to control the connection state between the movable and the microwave strip line. In addition, a phase control layer (second layer) 102 formed by a plurality of shifts is formed on a substrate (first layer) 101 made of a semiconductor device. The above microstrip line (guided wave path) 102a and microcomputer parts 102b are used to control the phase of the high-frequency signal. The micromechanical switch 102b is a fixed electrode support formed at intervals from 101 to 101 in Figure 1B. A movable electrode 123 on the pillar 122. The use of the control device (shown in FIG. 1C drives the electric electrode 123, and the movable electrode 123 is used to switch the microwave strip line 102a by 10 2a disconnection. The so-called micromechanical switch is suitable for It is a micro switch that is integrated into a profit process. In addition, the phase control layer 102 includes a separation layer (the first separation layer) i 丨 3 and a bonding groove (s 丨 〇t) that are specific to the present invention. (% Shihe device) The bonding layer 103 of the 103a and the separation layer (the second separation layer) are cool. The radiation element layer 105 (the third layer) in which a plurality of radiation elements (high-frequency components) are formed is arranged. On the radiation element layer 105, a non-powered element layer 107 having a plurality of non-powered elements 77 is arranged through an eight-layer (third separation layer) 106. The non-powered element is used for It is set up to increase the bandwidth, and can be added when necessary. On the other hand, the substrate 101 is provided with a bonding layer 108 having a bonding groove 108 and a separation layer (fourth separation layer) 109. To configure a distribution synthesis layer 110 composed of a microwave strip line and the like. This distribution synthesis layer Shu ^ square can with high frequency signal from the power supply unit (not shown) of the respectively assigned to each of the upper layer

Page 13 497293 V. Description of the invention (10) Distributor of phase shift unit. Furthermore, in the example shown in FIG. 丨, the composition is composed of a conductive material under the synthetic distribution layer 11 〇, and is provided by a dielectric layer in (a fifth separating layer) composed of a dielectric. Ground layer 112. The above-mentioned separation layer η and the ground layer 112 are provided in order to control the non-radiation from the eight-layer layered no, and can also be added when necessary. In addition, the phase control layer 102 is a plan view as shown in FIG. 1C As shown in the figure, the pot structure uses the operation of a plurality of micromechanical switches 102b to switch the energization length of the microwave strip line 102a. FIG. 1C is a plan view of a block (cein part) of a phase array antenna constituting a high-frequency device. Around the block, a signal extending from a signal line selection section (not shown) is arranged. Line ^〗, xi 2. The scanning line extended from the scanning line selection section (not shown) is extended to extend the signal line Trg of the trigger (trigger) and the cutting power supply line. . Domain 'uses the U-circuit (control device) 102d connected to the iso-signal line to control the micro-mechanical switch 102b to operate. ^ Inside the 仏 line, the microwave strip line 1 〇 2 a is connected by a groove. The upper part of 08a is connected to the lower part of the joint groove. 〇3a is formed at the lower part of the joint groove. On the way of the microwave strip line 10a, it is moved by 45 degrees, 90 degrees, and 180 degrees, for example. Phase circuit (phase shifter) 20% of the hall. Each phase shift circuit 102c is used to switch the phase shift amount generated by the micromechanical switch + -phase / movement to flow through the microwave strip line 102a.之 冋 # 化 # phase can be changed according to the desired value.

In the first embodiment, eight layers made of a dielectric material are formed; between the 02 and the bonding layer 103, in the separation layer 11 3 'is tied to the first separation layer), and the switcher Li The micromechanics of the phase control layer 1G2 on the region is formed by forming the thickness of the separation layer 113 to 0.2; Space) U3a. By using the movable second door of the micro-mechanical switch 102b. 2; i = privacy, you can ensure that there is no problem in the purchase of the live strip line. The frequency signal can also be used in the microwave phase-another example 1. Phase circuit 102C constitutes the first shift: the elements are formed on different layers 1, but a single phase shifting unit can also be formed on the same layer ... although the phase shifting unit is assigned to a different layer ... the phase shifting unit and the Distributor formation

I.—Person, let ’s briefly talk about the overall structure of the phase array antenna. «The phase array antenna is as shown in Fig. 2. First, a radiation element layer 105 and no radiation are arranged on the phase control layer 102. Power supply element layer M ?. In addition, a distribution synthesis layer is arranged under the phase control layer 102. In the upper, lower, and upper sigma configurations, for example, the radiation element layer 105 has a separation layer 104 at the lower part, and a bonding layer made of a thin copper layer, for example, and a bonding layer below it. A corresponding array (103) forms a ginger mouth consisting of holes ^ / 冓 1 0 3 a. Similarly, a bonding layer 108 made of, for example, a thin copper layer is provided in the phase control layer 02, and bonding grooves 108a are formed corresponding to the array at the bonding layer 108. In the above configuration, the phase control layer 102 is provided with a wiring for controlling each phase shift unit and the phase shift unit.

Page 15 497293

Xi Xm, Yi ~ Ym. Then, it is transmitted from the confession ancient:, //, and then supplied to the radiation element layer = = and then radiated by each radiation element ^ predetermined beam direction. The following is a description of the manufacturing method of the phase array antenna of the embodiment i. < Door collar mounting) First, it is the same as E 11 3 on the substrate 101. The shape of the separation layer 1 丨 3 will be described as an example. First, as shown in FIG. 3A, the shape line 102a and the fixed electrode 121 formed in 1e are formed. t Form the phase control layer 1 〇2 and the separation layer to form 'Why not use a micromechanical switch 1 〇2 b on the substrate 101 simultaneously form the micromechanical switch 10 shown in the microwave band 3 Second, as shown in the third As shown in FIG. B, a pillar 1 2 2 is formed on the end of the microwave strip line 1 0 2 a opposite to the fixed electrode 121. Next, as shown in FIG. 3C, a dielectric film (first dielectric layer) 301 made of, for example, polyimide is formed so that the upper surface of the pillar 122 is exposed and other areas are covered. Next, as shown in FIG. 3D, a movable electrode 123 is formed at a predetermined position of the dielectric film 301 so that one end contacts the entire area above the pillar 122 and the other end extends to the upper portion of the fixed electrode 121. Further, as shown in FIG. 3E, a dielectric film (second dielectric layer) 302 made of, for example, polyimide is formed on the dielectric film 301 including the movable electrode 123. ,,, I ·!

497293, description of the invention (1) Secondly, as shown in FIG. 3F, an inorganic insulating film 30 made of, for example, a stone oxide oxide is formed on the dielectric film 302. ^ Then, as shown in FIG. 3G, A photoresist pattern 3 0 4 having an opening 30 4a is formed on the inorganic insulating film 303 corresponding to the region where the movable electrode 123 has been formed. Then, the photoresist pattern 304 is used as a mask to insulate the inorganic insulation. The film 303 is selectively etched, and then the photoresist pattern 304 is removed, so that an opening portion 303a is formed at the inorganic insulating film 303 as shown in FIG. 3 (a).

Furthermore, the opening portion 3 0 3 a is formed by using the formed inorganic insulating film 3 0 3 as a mask to selectively etch the lower dielectric film 302 and the dielectric film 301 as shown in FIG. 3 Generally, openings 302a and 301a are formed in the dielectric film 302 to expose the formation area of the micromechanical switch 1021). Since the dielectric film 301 under the opening 303a is also removed at this time, a space is formed in the lower part of the movable electrode 123. Therefore, the micromechanical switch composed of the fixed electrode 12ι, the cylinder 1 22, and the movable electrode 丨 23 is thus carry out. Next, if only the inorganic insulating film 30 is selectively removed, it has openings 3 〇1 a, 3 0 2 b composed of the dielectric films 301, 302 shown in FIG. 3. The separation layer 11 3 of the formed opening region 11 3 a can be obtained on the substrate 100 as shown in FIG. 3J. On the other hand, a copper film is formed on the separation layer 109 made of a dielectric, and the copper film is patterned to form a bonding layer 1 having a bonding groove 108a on the separation layer 109. 〇8. In addition, a conductive material film such as gold is formed on the separation layer 111 made of a dielectric, and patterning is performed on the film to form a distribution composite layer 11 () < on the separation layer U1.

_

^ 293 V. Description of the invention (14) In addition, a ground layer 11 2 is formed inside the separation layer 11 1. Then, as shown in FIG. 3K, the inner surface of the separation layer 109 and the distribution and synthesis layer 11 of the separation layer 111 are formed to form a face-to-face contact to form an integrated structure. Then, the surface of the bonding layer 108 of the integrated structure and the inside of the substrate 101 are directly connected to each other through a bonding film 401, so that it is preheated under a predetermined pressure, and becomes a bonding layer as shown in FIG. 3L. The surface of 108 is attached to the substrate 101. Secondly, a conductive film made of, for example, copper teeth is formed on the inside of the separation layer 104 made of a dielectric, and then a patterning process is performed on the film to form a bonding layer with a bonding groove i03a in the separation layer 104. 103. A radiation element layer 105 is formed on the surface of the separation layer 104. A non-power-supplying element layer 107 is formed on the separation layer 6. Then, the separation layer 104 and the separation layer: two 6 ancient pastes were integrated into an integrated structure. Going one step further, as shown in Fig. 3, Fig. 111, a radiation structure layer 1.5 is disposed on the benefit supply control layer 102 through the upper a two-layer separation layer 104, 106, which is a fixed structure disposed on the separation layer ι3. ..., the multilayer structure of the power supply το component layer 107. Embodiment 2 '2' 2 ~ The embodiment 2 of the present invention will be described. In the second embodiment, as in the fourth garden Λ > w, there are multiple layers of the tree map A. As shown in the J-plane diagram, the multilayer substrate 500 is composed of a multi-layered substrate and a planar antenna. First, it is constituted by, for example, a burst antenna. A substrate (first layer) 501 is formed with an inner layer 502a composed of and equal to the "electrical body" and a micromechanical switch having a phase control layer composed of a microwave strip line (guide wave path) element. The complex phase shift single said) 502. The Secret Mechanical Switcher 5. Description of the Invention (15) 5 0 2 b is the same as that described in the first embodiment. In addition, on the phase control layer 502, a bonding layer 503 and a separating layer 504 of 503a are used, and a radiating element layer 505 having a coupling groove member (high-frequency component) is provided. On the radiation element layer 5 05, the separation layer 5 is interposed). In addition, the implementation of forming plural numbers in the non-power-supply-component-free layer of the power-supply-element-free layer 507 is the same, and the purpose is to add components and add them when necessary. It can also be established between the phase control layer 50 2 and the bonding layer 5 with a thickness of about 0.1 mm. The thickness of the dielectric material is AI 7 /, /, and T & Material separation layer 513. ^ 人 ^ 〇〇 In the substrate 501, a microwave strip line and the like are arranged through a layer T and a separation layer 509 having bonding grooves 508a.

The "" stratified 51. . This allocation composition layer 51. There is an allocation = that can distribute the signals from the unillustrated J-frequency to the upper phase shift units. Going further-ν, in the example shown in the 4th appendix, under the synthetic distribution exhibition 510 ^, the connection made of a conductive material is provided through a separation layer 511 (the fifth separation layer) made of a dielectric.地层 512. The above-mentioned separation layer and ground layer 512 are provided to control the unnecessary radiation from the distribution and synthesis layer 51o, and may be added correspondingly when necessary. In addition, the phase control layer 502 is shown in FIG. 4 β, and its structure is to switch the microwave strip line 502c using a phase shift circuit (phase shifter) 502c including a plurality of micromechanical switchers 502] 3. 2a is short. Fig. 4B is a plan view showing a block portion of a phase array antenna constituting a high-frequency device. The surrounding area of the block is equipped with: extended self-confidence

Page 19

丨 厶 7J

The starter Vdrv of the line selection section (not shown selection section (not shown) (not shown). Then, the device is used again) 502d to control the micro signal. Way to form. The phase shift circuits 5 02c at the 22.5, 45, and 90 degrees are based on the amount of phase shift that occurs, so that the bit can be changed by 1 according to the desired value. Line 5 X i 1, X i 2, Extending from the scanning line ^ Drawing lines Y j 1, Y j 2 ′ Extending from the control device L line Trg and the drive power line of the switch connected to the drive circuit of the above-mentioned signal lines (controlling the operation of the mechanical switch 502b. Inside the line, The above-mentioned microwave strip line 502a is directly connected to the microwave strip line 502a at a position lower than the bonding groove 503a, and is composed of, for example, 180 ° phase shift circuits 502c.

Phase switching of the high-frequency signal flowing through the microwave strip line 102a by the operation of the micromechanical switch 502b. In the second embodiment, the microwave band in the phase control layer 502 is used as a high-frequency signal transmission path. The shape line 50 2a (the black portion in FIG. 4B) is thickened to provide a space 513a under the separation layer 513 on the area where the micromechanical switch 502b is formed. Here, the height of the space 51 3a formed by using the microwave strip line 50 2a is about 0.1 mm. In the above-mentioned structure, the high-frequency signal from the power supply unit is transmitted through the strip line of the distribution and synthesis layer 510, and is then supplied to each phase shifting unit of the phase control layer 502, where a predetermined power supply and phase shift is given. The quantity is transmitted to each radiation element of the radiation element layer 505 through the bonding groove 503a of the bonding layer 503, and then each radiation element is radiated in a predetermined beam direction. Next, a method for manufacturing a phase array antenna (high-frequency device) according to the second embodiment will be described.

Page 20 497293 V. Description of the invention (17) First, a phase control layer 50 is formed on the substrate 501. Do not take the position of the micromechanical switch 502b as an example for description. First, as shown in FIG. 5A, the circuit 502a is simultaneously formed on the substrate 501 and the fixed electrode 521 is formed as shown in FIG. 4. ^ ^ Supply bUZb Secondly, as shown in FIG. 5B, a pillar 522 is formed on the end of the strip line 502a opposite to the fixed electrode 521. Then, as shown in FIG. 5C, the pillar is made All other areas above 522 are covered by t in the form of "You Example #Po-Plasma Membrane (Layer 4)" 601. The electric shock is scared, and again, as shown in FIG. 5D, at one end of the dielectric film 601 in a manner that one end contacts the entire area above the pillar 5 22 and the other end extends to the upper part of the fixed electrode 521 A movable electrode Mg is formed. Further, as shown in FIG. 5E, a dielectric film 302 made of, for example, polyimide is formed on the electric film 601 including the movable electrode 523. θ "Next, as shown in Fig. 5F, an inorganic insulating film 603 made of, for example, silicon oxide is formed on the dielectric film 602. Next, as shown in FIG. 5G, a photoresist pattern is formed on the inorganic insulating film 603 except for the microwave strip line 502a (black portion shown in FIG. 4B) shown in FIG. 4 and FIG. 604. Then, by using the photoresist pattern 604 as a mask, the inorganic insulating film 603 is selectively etched, and then the photoresist pattern 604 is removed, and the microwave strip line 5 can be displayed as shown in FIG. 5H. The area on 02a forms an open hard curtain

497293

603a 〇 Furthermore, using the hard mask 6 03a as a mask, the lower dielectric film 6 2 and the dielectric film 6 01 are selectively engraved so as to be shown in FIG. The areas in the film 601, 602 and the microwave strip line 502a were wiped up to form the opening areas 60a, 602a. < Microwave line; Second = Metal chips 502aa made of copper and other metals are formed on the exposed cymbals only by the method to thicken the microwave strip line 502a. For example, if the dielectric film 602 and the dielectric film 601 are removed along with the hard cover 521 and the body 52, as shown in FIG. 5K, the micromechanism composed of the fixed electrode 5m and the movable electrode 523 is completed. Switcher ... After the slave completes the micro-mechanical switch 502b at the same time ^ The upper part of the two mechanical switcher 502b can be obtained: Yu Cheng, and the thickened state of the microwave strip line 502a is obtained. The film is formed by forming a steel with a bonding groove at a temperature of 5 ° 9 from the layer :: 5 case 08 plus. In this way, a gold layer is formed on the separation layer 5 11 to perform pattern processing on the film composed of electricity, and to separate the reed material ′ ′, and in addition, the shape is formed in the separation layer 51 1. The stomach distributes into a synthetic layer 51. As shown in Fig. L · 5, the separation layer 589 of the soil layer 5 12 is separated. Then, as shown in FIG. 51, the front surface is integrally bonded to form the integrated composite structure with a 5 U distribution layer. Then, the surface of the integrated structure is directly connected through the film 801. 8 surface and the substrate 501 and under a given pressure to 497293 V. Description of the invention (19) Heating to become the bonding layer 508 surface as shown in Figure 5M followed by the substrate 501 status. Next, an 'electric film' made of copper is formed on the inside of the separation layer 504 made of a dielectric, and the film is patterned to form a bonding layer 503 having a bonding groove 503a in the separation layer 504. A radiation element layer 505 is formed on the surface of the separation layer 504. A non-power-supply element layer 507 is formed on the separation layer 506. Then, the separation layer 504 and the separation layer 506 are laminated into an integrated structure. m and then 'by fixing the separation layer 513 on the microwave strip line 502a of the substrate 501' and further fixing the one-body structure containing the separation layer 504,506 on the separation layer 513, as in the fourth As shown in FIG. A, a multilayer structure in which a radiation element layer 505 and a non-power-supply element layer 507 are disposed on the phase control layer 502 is completed.

In the first and second embodiments described above, the phase array antenna having a multilayer structure is used as an example of a high-frequency device, and the structure and manufacturing method of the case where a switch with a movable portion is mounted on the inner layer are exemplified. Explain it. However, the high-frequency device of the present invention is not limited to a phase array antenna. For example, 'high frequency small relays (re 1 ay) are installed on the inside of the multilayer substrate as most high frequency movable parts, so as to receive diversity by selectively switching the majority of high frequency received signals like diversity reception (diversity) The receiving circuit is also applicable. In addition, it can also be used to switch on or off the high-frequency transmission circuit of the high-frequency small relay installed in the multilayer substrate 2 as a high-frequency movable part. on. As described above, in the present invention, a high-frequency circuit is mounted on a multilayer substrate.

Page 23 497293 V. Description of the invention (20) The inner layer of the middle-layer substrate is formed in an opening that is connected to handle a higher thickness of the high substrate and the components thereon. Based on the above, the switch is used for example. As a result, it is used for the height of the switcher of the phase array. In addition, in the device, the inner substrate is formed on the inner substrate to process the high-frequency signal and make it high. By forming a blank action above the board. The junction is suitable for phase array switches, etc., so that it is formed on the substrate and the inner layer substrate is used to up-frequency signals; it is set between layers and at the same time in a high structure, and the high frequency can be waited. The frequency-increasing movable part of the present invention is formed by including and used for transmitting the board, and borrowing; the guided wave frequency-frequency movable part is structured to be ready, so as a result, if a high-frequency movable such as an array antenna When the moving parts of the separation layer come into the invention, the excellent effects of high-frequency and high-frequency multi-layer substrates are: a high-frequency signal of a guided wave path; the south degree ratio of the movable structure is installed on the inner layer A, and i is a guided wave path. Yu Dua, ί, ί Directional signals; a high-frequency movable zero-two sub-hunter is separated from the guided wave path by a movable structure and separated from the guided wave path, and am ^ Li 'is used to separate the inner layers and has a higher specific frequency. In the opening area formed by the shape of the movable zero-frequency movable part, it is easy to connect / disconnect, etc. to obtain the so-called suitable high-frequency device. The high-frequency circuit equipped with a high-frequency circuit is formed on the multilayer substrate. Movable zero The components are connected to the guided wave path, and the height of the high-frequency substrate of the movable part and the higher guided wave path formed by the upper layer of the upper layer and the switch are used in the space. According to the present invention, g 卩 = movable Excellent performance of high-frequency U-pieces with zero gain and high frequency band. τ made

Page 24 497293 V. Description of the invention (21) In addition, in the present invention, it is formed to include a plurality of guided wave paths formed on the main surface of the inner substrate constituting the multi-layer substrate for transmitting high-frequency signals; A switcher is formed on the main surface of the inner layer substrate and has a movable portion capable of switching the connection state of the waveguide; and a structure is formed between the main surface of the inner layer substrate and the substrate disposed thereon. There is space above the arranged switch formation area. With the above structure, the switch can be connected / disconnected in the space of the structure. As a result, according to the present invention, it is possible to obtain an excellent effect of a switcher that can be used in a high-frequency device suitable for a high-gain, high-frequency band such as a phased array antenna.

Claims (1)

w / 293 VI. Patent application scope A high-frequency device, including: Multi-layer substrate waveguide (substrate (10 high-frequency movable, with space (11 area, transported to the south). If the application is exclusively in the above domain (113a, such as application Road (5 0 2a) is movable) The upper limit of the system road is like the upper limit of the formation on the inner substrate of the special moving parts system 2. The opening area of the space system 3 • The guided wave (502b (513a, guided wave 4. High (100,500) 'It has a multi-layer structure; 102a, 50 2a) is formed on the multi-layer substrate 1,501) to transmit high-frequency signals; and parts (102b, 502b) are formed on the above-mentioned A movable structure whose inner layer can be separated from the above-mentioned guided wave path; and 3a, 513a) are formed in the above-mentioned high-frequency movable part, and its south degree is higher than that described in item 1 of the movable range of the high-frequency movable part High frequency device, which is formed by the upper layer (113) of the above-mentioned inner substrate (101). The high frequency device described in item 1 above, wherein the upper 卩 damage is south of the high frequency movable part. Way to form the upper limit of the range And the space is formed between the inner layer substrate (501) and the upper layer (513) of the inner layer substrate supported thereon. The high-frequency device according to item 1 of the profit range, wherein the above is a switchable switching state of the connection state of the guided wave path. The high-frequency device according to item 4 of the ninth range, wherein (H, arranged on the inner substrate Fixed electrode) and a post (1 22, 52 $) arranged at a distance from the fixed electrode, and one end is fixed on the post and the other end extends to the fixed electrode 497293 6. Micro-mechanical switch composed of movable electrodes (1 23, 52 3) above the scope of patent application. 6. The high-frequency device according to item 4 of the scope of patent application, which has a control device (102d, 502d) formed on the inner substrate and used to control the switcher. '7. The high-frequency device according to item 1 of the scope of the patent application, wherein the multilayer substrate includes at least the following three layers: ^ a first layer composed of the above-mentioned inner-layer substrate; having the above-mentioned formed on the above-mentioned inner-layer substrate The second layer (1002, 502) of the guided wave path and the upper-frequency movable part; and the n # has two third layers (1G5, 5G5) of the above-mentioned high frequency part transmitted by the above-mentioned guided wave path. Alas. 8. The high-frequency device as described in item 7 of the scope of patent application, wherein the upper (B substrate further includes a bonding layer composed of a conductive material (103) combined with the second layer and the above The third layer is between the above-mentioned high-frequency signal and the above-mentioned high-frequency zero. The display (103a, 503a). The high-frequency device according to item 8 of the multi-layered profit range, wherein the second material is placed at the first Between the 2 layers and the above-mentioned bonding layer and at the above = separation layer (" 3, "" and-the second separation layer (m, 5 04 i) is arranged. The inner layer between the layers and made of dielectric material is 1mu in the range The high-frequency device according to item 1, wherein the substrate is made of a dielectric. The high-frequency device according to item 4 of the patent claim, wherein 497293 6. Scope of patent application A phase shifter (102c, 50 2c) for changing the phase of the high-frequency signal is formed by the above-mentioned waveguide and the above-mentioned switcher. 1 2 · The high-frequency device according to item 7 of the scope of patent application, wherein the above-mentioned south-frequency component is composed of a radiation element. 1 3 · The high-frequency device according to item 1 of the scope of patent application, wherein the high-frequency signal is provided with a distribution layer (110,510) for supplying the high-frequency signal to the waveguide formed on the inner substrate. 4 14 · A method for manufacturing a high-frequency device, comprising the following steps: forming a waveguide (102a, 502a) on a substrate (101, 501) made of a dielectric for transmitting a high-frequency signal; A high-frequency movable part (102b, 50b) of a movable structure capable of being separated from the above-mentioned guided wave path; and a space having a height higher than the upper limit of the movable range of the high-frequency movable part is formed on the upper part of the formation area of the high-frequency movable part (Ll3a 5i3a) to form a first separation layer (113, 5l3) 'on the substrate. 15. The method of manufacturing a high-frequency device as described in item 14 of the scope of patent application, which further includes the following steps: 体 (122); On the substrate, a fixed electrode (i2i) spaced apart from each other is formed by a dielectric material (301) covered by the fixed electrode; a movable electrode (1 23) in a state where one end is fixed to the upper part of the column; Formed on the first dielectric layer and the other end extends to the above-mentioned fixed electrode 497293 6. Scope of patent application _ Formed on the above-mentioned dielectric layer a second dielectric I composed of the above-mentioned movable electric material (302); And the cover is formed by forming openings (302a, 301a) at the I-2 domain in the second and first dielectric layers, and forming the upper electrode = the board and the upper electrode = Λ2 power on = The above-mentioned high frequency can be broad and the above-mentioned movable electrode. 16. The high method as described in item 14 of the scope of patent application, which further includes the following steps: Each space (5 ^ 2 above) on the substrate forms mutually spaced substrates. The fixed electrode (521) is formed on the post with a fourth layer (60) that exposes the upper part of the post and exposes the upper part of the post; and an end is fixed on the fourth layer Above the cylinder and the other A movable electrode (523) extending from the end to the fixed electrode; re forming a 5th layer covering the movable electrode on the 4th layer \ 6 0 2 y, in the 5th and 4th layer above the guided wave path A predetermined area is opened> to form an opening area (602a, 601a); a metal layer ΓΓV is formed on the above-mentioned waveguide in the above-mentioned opening area, and the above-mentioned waveguide in the above-mentioned opening area is higher than Formed by the upper limit of the movable range of the movable electrode; removing the fifth and fourth layers; and On the upper surface of the turbidity% a, test 1 is a top surface consisting of a dielectric material, and the top surface is equal to 1: a layer— (513), and is composed of the fixed electrode, the pillar, and the eight electrode. The high-frequency movable part is formed in the first blade space (513a). 1 7 · The method for manufacturing a high-frequency device as described in item 14 of the scope of patent application, which further includes the following steps: The conductive material of the front-closure device (103a, 50a) is composed of ... 3) forming the bonding device on the first region of the guided wave to form the first separation layer; forming a second separation layer (104, 504) made of a dielectric material on the bonding layer; ; And forming the high-frequency signal transmitted by the guide wave path on the second separation layer by a high-frequency component combined by the coupling device. · 18 · The method for manufacturing a high-frequency device according to item 4 of the scope of the patent application, wherein a phase shifter that changes the phase of the high-frequency signal is formed by the waveguide and the high-frequency movable part ( 102c, 502c) 1 9-The method of manufacturing a high-frequency device as described in item 17 of the scope of the patent application, wherein the high-frequency component is composed of a radiation element. 2 0 · The method for manufacturing a high-frequency device as described in item 14 of the scope of the patent application, which further includes the following steps: forming a distribution layer (11) for supplying the above-mentioned high-frequency signal to the above-mentioned guided wave path formed on the above-mentioned substrate 〇, 5 丨 〇). 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