WO2000078504A1 - Procede et appareil destines a augmenter la duree de vie d'une structure de maintien de pieces a usiner et a conditionner une surface de polissage - Google Patents

Procede et appareil destines a augmenter la duree de vie d'une structure de maintien de pieces a usiner et a conditionner une surface de polissage Download PDF

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Publication number
WO2000078504A1
WO2000078504A1 PCT/US2000/016279 US0016279W WO0078504A1 WO 2000078504 A1 WO2000078504 A1 WO 2000078504A1 US 0016279 W US0016279 W US 0016279W WO 0078504 A1 WO0078504 A1 WO 0078504A1
Authority
WO
WIPO (PCT)
Prior art keywords
retaining structure
diamond
coating
workpiece
retaining
Prior art date
Application number
PCT/US2000/016279
Other languages
English (en)
Inventor
Wayne Lougher
Original Assignee
Speedfam-Ipec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Speedfam-Ipec Corporation filed Critical Speedfam-Ipec Corporation
Publication of WO2000078504A1 publication Critical patent/WO2000078504A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for

Definitions

  • the present invention relates generally to the art of polishing and planarizing workpieces such as semiconductor wafers. More particularly, the present invention relates to a workpiece or wafer carrier having an improved wafer retaining structure which can also function as an in-situ conditioner for a polishing surface.
  • wafers which are comprised of single crystal silicon. These semiconductor wafers are typically formed by growing an elongated cylinder or ingot of single crystal silicon and then slicing individual wafers from the cylinder. Multiple layers of conductive material and dielectric material are then built up on the wafer to form a multilevel integrated circuit.
  • the surface of the wafer on which the integrated circuitry is constructed, as well as the material layers applied to the wafer as the integrated circuitry is built must be extremely flat and free of irregularities or projections. The removal of projections and other imperfections in order to achieve a flat substrate surface is referred to in the art as planarization.
  • CMP chemical mechanical polishing
  • CMP machines generally include one or more wafer carriers which retain and carry wafers to be planarized, and which press the front faces of the wafers, or surfaces of the wafers on which integrated circuitry will be built, against the upper surface of a rotating polishing pad.
  • a pressure applying element e.g., a rigid plate, a bladder assembly, or the like
  • the carrier and the polishing pad are rotated, typically at different rotational velocities, to cause relative lateral motion between the polishing pad and the wafer and to promote uniform polishing.
  • an abrasive slurry such as a fumed silica slurry
  • a wafer carrier comprises a number of different embodiments. Most conventional carrier assemblies include some form of retaining structure that maintains the position of the wafer under the pressure element during polishing. Most of these prior art wafer carriers minimally include a rotatable housing, a pressure "plate", which can be rigid or flexible, mounted within the housing, and an extension ring or retaining ring. In use, a wafer is held against the pressure plate by any convenient mechanism, such as, by vacuum or by wet surface tension.
  • the pressure plate equally distributes downward pressure against the backside of the wafer as it is pressed against the polishing pad.
  • the retaining ring is connected around the periphery of the pressure plate thereby functioning to prevent the wafer from slipping laterally from beneath pressure plate as the wafer is polished.
  • the retaining ring is typically made of a strong polymer having high chemical resistance in order to withstand wear and corrosion during polishing with an abrasive slurry. Accordingly, there is a need for a carrier retaining ring which exhibits an increased lifespan, is resistant to wear and corrosion, is inexpensive to make, and results in increased cost effectiveness by reducing the number of times a polishing machine must be shut down in order to replace a carrier ring.
  • the workpiece e.g. wafer
  • the pad rotates about its vertical axis.
  • the wafer may also be rotated about its vertical axis and oscillated back and forth over the surface of the polishing pad. It is well known that polishing pads tend to wear unevenly during the polishing operation, causing surface irregularities to develop on the pad. To ensure consistent and accurate planarization and polishing of all workpieces, these irregularities should either be removed or accounted for.
  • One method of removing the surface irregularities which develop in the polishing pad is to condition or dress the pad with some sort of roughing or cutting means. Generally this truing or dressing of the polishing pad can occur either while the wafers are being polished (in-situ conditioning), or between polishing steps (ex-situ conditioning).
  • ex-situ conditioning is disclosed in Cesna, et al, U.S. Patent No. 5,486,131 , issued on January 23, 1996, and entitled Device for Conditioning Polishing Pads.
  • An example of in-situ conditioning is disclosed in Karlsrud, U.S. Patent No. 5,569,062, issued on October 29, 1996, and entitled Polishing Pad Conditioning. Both the Cesna, et al. patent and the Karlsrud patent are herein incorporated by reference.
  • both in-situ and ex-situ conditioning apparatus utilize circular ring conditioners which have these cutting elements secured to a bottom flange of the ring.
  • these cutting elements are secured to the bottom surface of the flange of the carrier ring by an electroplating process or brazing process.
  • Electroplating produces a simple mechanical entrapment of the cutting elements on the carrier ring by depositing metal, for example in a layer-by-layer fashion around the cutting elements until they are entrapped.
  • the electroplating bond holding the cutting elements to the ring surface is relatively weak and the cutting elements occasionally become dislodged from the conditioning ring and embedded in the polishing pad.
  • the electroplating bond is susceptible to shearing forces, a substantial amount of bonding material is needed to hold the cutting elements in place. As a result, the bonding material actually covers most, if not all, of the many cutting elements, thereby compromising the conditioning capacity of the conditioning ring.
  • the previously mentioned brazing process is preferred. A detailed discussion of the brazing process is discussed herein as well as in Holzapfel, et al, U.S. Patent No. 5,842,912, issued December 1, 1998, which is herein incorporated by reference.
  • the cutting elements which are secured to the bottom surface of the flange of carrier rings may comprise diamonds, polycrystalline chips/slivers, silicon carbide particles, and the like.
  • these processes are not ideal in that they exhibit a very short lifetime which results in diamond loss, diamond fracture, or plating wear. These lost or fractured diamonds can cause severe scratches in the wafers that are being polished. Wafers that are scratched are considered to be scrap and this can result in increased costs to the consumer.
  • the short lifetime of the conditioning rings due to plating wear is significant in that the conditioning rings are typically the most expensive consumable component part on the CMP apparatus.
  • a retaining ring having a relatively high surface roughness provides an effective in-situ conditioner for a polishing pad.
  • Yet another object of the present invention is to provide a workpiece retaining structure for use within a wafer carrier which functions as an in-situ conditioning ring that can be processed at lower temperatures and at lower costs.
  • a still further object of the present invention is to provide an inexpensive retaining workpiece structure such as, for example, a ring for use with a wafer carrier which also functions as an in-situ pad conditioner that increases cost effectiveness in polishing and planarizing wafers due to the decrease in polishing machine downtime required for replacing retaining rings.
  • the workpiece carrier retaining structure of the present invention preferably includes at least one of a diamond-like carbon coating or chemical vapor deposition (CVD) diamond coating applied to at least one surface of the retaining structure.
  • the retaining structure acts to retain a workpiece, such as a wafer, in a workpiece carrier and also functions as an in-situ conditioner for a polishing pad during wafer polishing.
  • Diamond-like coatings are based on the same carbon chemistry used to produce thin diamond films but are instead processed at low temperatures. In that diamond-like coatings can be processed at low temperatures, the retaining structure may be made of a variety of inexpensive substrate materials such as epoxy-glass, polycarbonate, acrylic, polyethylene, and glass-ceramic.
  • the retaining structure resulting from coating the retaining structure with a diamond-like coating provides a retaining structure that has increased wear resistance, increased corrosion resistance, a low coefficient of friction, and an increased lifespan.
  • CVD diamond coatings may also be used to coat retaining structures used in association with wafer carriers to arrive at the wafer carrier retaining structure of the present invention.
  • use of CVD to produce diamond film on a retaining structure requires relatively high temperatures and is more costly due to the amount of time, energy and raw materials required to produce reasonable amounts of film.
  • Methods for making the improved retaining structure of the present invention include the use of ion assisted beam deposition and plasma ion-source implantation to coat the retaining structure with an amorphous carbon film.
  • the use of a pulsed laser on a graphite target that is evaporated by laser radiation may be used to create a diamond-like coating.
  • chemical vapor deposition of diamond material is used to create a diamond film.
  • Figure 1 is a side cross-sectional view of one exemplary embodiment of a prior art semiconductor wafer carrier element.
  • Figure 2 is a carrier extension/retaining ring comprising a diamond-like coating in accordance with the present invention.
  • Figure 3 is a flow chart showing an exemplary embodiment of the method of the present invention for increasing the lifetime of a workpiece carrier retaining structure and conditioning a polishing surface.
  • Figure 4 is a flow chart showing another exemplary embodiment of the method of the present invention for increasing the lifetime of a workpiece carrier retaining structure and conditioning a polishing surface.
  • the present invention relates to a workpiece or wafer carrier having an improved wafer retaining structure which may also function as an in-situ conditioner for a polishing surface.
  • Figure 1 shows one embodiment of a prior art wafer carrier element which may be used in accordance with the improved retaining structure of the present invention.
  • Carrier element
  • Pressure plate 12 applies an equally distributed downward pressure against the backside of a wafer 20 as it is pressed against polishing pad 22.
  • Protective layer 14 resides between pressure plate 12 and wafer 20 to protect the wafer 20 during the polishing process.
  • Protective layer 14 may be any type of semi-rigid material that will not damage the wafer as pressure is applied; for example, a urethane type material.
  • Circular retaining ring 16 preferably is connected around the periphery of protective layer 14 and prevents wafer 20 from slipping laterally from beneath the protective layer 14 as the wafer is polished. Retaining ring 16 is generally connected to pressure plate 12 by bolts 24.
  • Polishing pad conditioning devices currently known in the art, including carrier retaining rings, typically employ diamond particles as the roughing elements or cutting elements used to condition polishing pads.
  • Conditioning devices for conditioning polishing pads by contacting the conditioning devices with the pads are configured with cutting elements, such as diamonds, electroplated to the bottom surfaces of the conditioning devices, or thin film diamond deposition applied over the bottom surfaces of the conditioning devices.
  • Diamond like coatings have recently gained attention in diamond technology for a variety of applications which require wear resistance and decreased friction including, for example, optical windows, cutting tools and biomedical applications. DLC's are based on the same carbon chemistry that is used to produce thin diamond films but are lower in cost and can be processed at much lower temperatures.
  • the method and apparatus of the present invention include applying a DLC to at least one surface of a carrier retaining structure, such as a retaining ring, in order to provide a carrier retaining structure that is wear and corrosion resistant, has a longer lifespan and also provides for the simultaneous conditioning of a polishing pad when the retaining structure is used within a wafer carrier to polish a wafer.
  • the DLC may be applied to the wafer extension or retaining ring in a number of ways.
  • the DLC may be applied to the retaining ring by ion assisted beam deposition or plasma ion-source implantation.
  • DLC's can be deposited on the wear area of a retaining ring to condition the pad increase the lifetime of the consumable without coming in contact with the wafer.
  • the inner diameter of the retaining ring can still be made of soft plastic that contacts the wafer.
  • the wear area of the ring is coated with DLC to increase its lifetime.
  • the DLC coating follows the roughness of the substrate surface.
  • TETRABOND is an amorphous diamond coating which purports to bridge the gap between chemical vapor deposition diamond films and Diamond Like Carbon films. Specifically, the producers of TETRABOND claim that it is more stable at elevated temperatures in humid conditions than DLC's which contain a greater amount of hydrogen. In addition, TETRABOND is harder than DLC's. However, TETRABOND requires a conductive surface for deposition and its application is therefore limited to conductive surfaces only, such as metals.
  • Table 1 compares the properties of natural diamond, chemical vapor deposition diamond, and diamond-like carbon.
  • diamond-like carbon Like natural diamond and chemical vapor deposition diamond, diamond-like carbon exhibits low friction and chemical inertness. However, although diamond like carbon is not as hard as chemical vapor deposition diamond, it results in an exceptionally smooth coating and can be processed at much lower temperatures than chemical vapor deposition diamond, thereby reducing costs and providing increased resistance to wear and corrosion. Due to the low processing temperature for diamond-like carbon, a wide variety of materials can be coated with diamond-like carbon, including plastics.
  • one preferred embodiment of the present invention comprises the application of a diamond-like carbon coating covering at least one surface of a carrier retaining structure such as the carrier retaining ring shown in Figure 2.
  • the carrier ring shown in Figure 2 comprises a ring member 30 having at least a bottom surface 32 of the ring member 30, i.e. that surface of the retaining ring which comes into contact with a polishing surface during polishing, covered with a diamond-like coating as described above.
  • the inner diameter 33 of the ring member 30 may be covered with a soft inner coating to avoid scratching or damaging the workpiece where the ring member 30 comes into contact with the workpiece.
  • the present invention also contemplates the use of chemical vapor deposition (CVD) diamond coating to arrive at the method and apparatus of the present invention for increasing the lifetime of a workpiece retaining structure and conditioning a polishing surface.
  • CVD coatings are true diamond coatings deposited at much higher temperatures than diamond-like coatings.
  • CVD coatings have the added advantage of superior hardness to diamond-like coatings as (see Table 1).
  • CVD processing can actually deposit varying surface roughness films on the substrate depending on the processing conditions.
  • a rough CVD film can be deposited on a smooth substrate to act as an in-situ pad conditioner.
  • Figure 3 depicts a flow chart showing one exemplary method of the present invention for increasing the lifetime of a workpiece carrier retaining structure and conditioning a polishing surface. Only the most basic steps of the method are shown. It will be appreciated by those skilled in the art that additional processing steps and application steps may be performed without changing the overall characteristics, benefits and advantages of the present invention.
  • a retaining structure is formed from an inexpensive substrate material.
  • the inexpensive substrate material may include epoxy-glass, polycarbonate, acrylic, polyethylene, glass-ceramic, and any other inexpensive substrate that exhibits the requisite hardness desired for a carrier retaining structure.
  • step two 42 a surface of the inexpensive substrate is roughened to achieve a desired amount of conditioning. After conditioning a surface of the inexpensive substrate, a diamond-like coating is applied to at least one surface of the retaining structure at low temperature in step three 44.
  • the diamond-like coating may be applied by combining the carbon chemistry utilized with diamond thin films and ion assisted beam deposition, plasma ion-source implantation, or laser radiation of a graphite target.
  • the application of the diamondlike coating at low temperature ensures that the inexpensive substrate comprising the retaining structure withstands the application process and results in a functional retaining structure having appropriate strength. Steps one, two and three 40,42,44 result in a carrier retaining structure in accordance with the present invention which undergoes less wear and corrosion than prior art retaining structures and also enjoys an increased lifespan with respect to prior art retaining structures such as prior art retaining rings.
  • the retaining structure is positioned within a typical workpiece carrier element in step four 46.
  • the workpiece and retaining structure of the present invention are pressed against a polishing surface during polishing of the workpiece in step five 48.
  • the retaining structure of the present invention also functions as an in-situ conditioner for a polishing surface such as a polishing pad used in wafer polishing.
  • the same concept for coating inexpensive materials can also be applied to hard materials such as steel or ceramic.
  • silicon carbide (SiC) ceramic extension ring material densified through a liquid phase sintering can be coated with a soft coating such as Teflon on the wafer contact surface and a DLC for the wear surface.
  • SiC is extremely hard, grain pull-out can still be a concern.
  • Liquid phase sintering of SiC is accomplished by mixing softer ceramic materials such as alumina-yttria and forming a liquid at high temperature (>1700°C) to fully density the SiC into a two-phase system of SiC grains and a second alumina-yttria second phase. Microstructural analysis of this material will show that entire SiC grains can be surrounded by this liquid. Over time, polishing can wear away the second phase leaving a loose SiC grain which can break loose from the ring to possibly scratch a wafer. By coating the wear surface with DLC, the grain pull-out concern is greatly minimized. In addition, the full hardness of DLC will be realized by utilizing a hard substrate base material.
  • FIG 4 another flow chart is shown depicting another exemplary method of the present invention for increasing the lifetime of a wafer carrier retaining structure and conditioning a polishing surface.
  • a workpiece retaining structure is formed from a high-temperature substrate material such as SiC.
  • step two 52 chemical vapor deposition of a diamond material is performed at a relatively high temperature, e.g. 800 - 1000 degrees C, to coat a surface of the workpiece retaining structure. This results in a workpiece retaining structure that has an increased resistance to wear and corrosion over prior art retaining structures.
  • the workpiece retaining structure is then positioned within a workpiece carrier apparatus or element in step three 54.
  • the workpiece and workpiece retaining structure of the present invention are pressed against a polishing surface during polishing of the workpiece in step four 56. Accordingly, the resulting retaining structure also functions as an in-situ conditioner for a polishing surface such as a polishing pad that is used to polish a workpiece such as a wafer.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un procédé et un appareil de polissage de pièces à usiner telles que des plaquettes de semi-conducteur comprenant un support de plaquette présentant une structure de retenue (30) faisant office de conditionneur in situ pour une surface de polissage. La structure de retenue (30) présente un revêtement de type diamant ou un revêtement en diamant obtenu par dépôt chimique en phase vapeur (CVD) appliqué sur au moins une surface (32) de celle-ci, prolongeant ainsi la durée de vie de la structure de retenue (30). Les propriétés du revêtement de type diamant ou du revêtement en diamant CVD, appliquées sur la structure de retenue, telle que la rugosité de la surface, peuvent être adaptées à des applications spécifiques telles que le conditionnement in situ.
PCT/US2000/016279 1999-06-19 2000-06-14 Procede et appareil destines a augmenter la duree de vie d'une structure de maintien de pieces a usiner et a conditionner une surface de polissage WO2000078504A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33622099A 1999-06-19 1999-06-19
US09/336,220 1999-06-19

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WO2000078504A1 true WO2000078504A1 (fr) 2000-12-28

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6699107B2 (en) 2002-02-27 2004-03-02 Advanced Micro Devices, Inc. Polishing head and apparatus with an improved pad conditioner for chemical mechanical polishing
DE10247200A1 (de) * 2002-10-10 2004-04-29 Wacker Siltronic Ag Verfahren zur gleichzeitig beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben
DE10261306A1 (de) * 2002-12-27 2004-08-05 Advanced Micro Devices, Inc., Sunnyvale Haltering mit reduzierter Abnutzungs- und Kontaminationsrate für einen Polierkopf einer CMP-Anlage
US6860803B2 (en) 2001-10-15 2005-03-01 Shin-Etsu Chemical Co., Ltd. Polishing plate
WO2005049274A2 (fr) * 2003-11-13 2005-06-02 Applied Materials, Inc. Bague de retenue a surface façonnee
WO2007045479A1 (fr) * 2005-10-21 2007-04-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Spheres creuses pourvues d'une enveloppe et procede et dispositif pour produire ces spheres creuses
CN1314514C (zh) * 2001-10-29 2007-05-09 旺宏电子股份有限公司 化学机械研磨装置的晶圆载具结构
US7273655B2 (en) 1999-04-09 2007-09-25 Shojiro Miyake Slidably movable member and method of producing same
US7771821B2 (en) 2003-08-21 2010-08-10 Nissan Motor Co., Ltd. Low-friction sliding member and low-friction sliding mechanism using same
US8096205B2 (en) 2003-07-31 2012-01-17 Nissan Motor Co., Ltd. Gear
US8152377B2 (en) 2002-11-06 2012-04-10 Nissan Motor Co., Ltd. Low-friction sliding mechanism
US11260500B2 (en) 2003-11-13 2022-03-01 Applied Materials, Inc. Retaining ring with shaped surface

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Publication number Priority date Publication date Assignee Title
US4270314A (en) * 1979-09-17 1981-06-02 Speedfam Corporation Bearing mount for lapping machine pressure plate
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
US5569062A (en) * 1995-07-03 1996-10-29 Speedfam Corporation Polishing pad conditioning
EP0786310A1 (fr) * 1996-01-24 1997-07-30 Ontrak Systems, Inc. Tête de polissage pour plaquette semi-conductrice
EP0878269A2 (fr) * 1997-05-12 1998-11-18 Integrated Process Equipment Corp. Dispositif de dressage pour tampons de polissage
WO1999002309A1 (fr) * 1997-07-10 1999-01-21 Sp3, Inc. Substrat revetu de diamant cvd pour tete de conditionnement d'un tampon de polissage et son procede de fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270314A (en) * 1979-09-17 1981-06-02 Speedfam Corporation Bearing mount for lapping machine pressure plate
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
US5569062A (en) * 1995-07-03 1996-10-29 Speedfam Corporation Polishing pad conditioning
EP0786310A1 (fr) * 1996-01-24 1997-07-30 Ontrak Systems, Inc. Tête de polissage pour plaquette semi-conductrice
EP0878269A2 (fr) * 1997-05-12 1998-11-18 Integrated Process Equipment Corp. Dispositif de dressage pour tampons de polissage
WO1999002309A1 (fr) * 1997-07-10 1999-01-21 Sp3, Inc. Substrat revetu de diamant cvd pour tete de conditionnement d'un tampon de polissage et son procede de fabrication

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7273655B2 (en) 1999-04-09 2007-09-25 Shojiro Miyake Slidably movable member and method of producing same
US6860803B2 (en) 2001-10-15 2005-03-01 Shin-Etsu Chemical Co., Ltd. Polishing plate
CN1314514C (zh) * 2001-10-29 2007-05-09 旺宏电子股份有限公司 化学机械研磨装置的晶圆载具结构
US6699107B2 (en) 2002-02-27 2004-03-02 Advanced Micro Devices, Inc. Polishing head and apparatus with an improved pad conditioner for chemical mechanical polishing
DE10208414B4 (de) * 2002-02-27 2013-01-10 Advanced Micro Devices, Inc. Vorrichtung mit einem verbesserten Polierkissenaufbereiter für das chemisch mechanische Polieren
DE10247200A1 (de) * 2002-10-10 2004-04-29 Wacker Siltronic Ag Verfahren zur gleichzeitig beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben
US8152377B2 (en) 2002-11-06 2012-04-10 Nissan Motor Co., Ltd. Low-friction sliding mechanism
DE10261306A1 (de) * 2002-12-27 2004-08-05 Advanced Micro Devices, Inc., Sunnyvale Haltering mit reduzierter Abnutzungs- und Kontaminationsrate für einen Polierkopf einer CMP-Anlage
DE10261306B4 (de) * 2002-12-27 2010-02-25 Advanced Micro Devices, Inc., Sunnyvale Haltering mit reduzierter Abnutzungs- und Kontaminationsrate für einen Polierkopf einer CMP-Anlage und Polierkopf und CMP-Vorrichtung mit Haltering
US8096205B2 (en) 2003-07-31 2012-01-17 Nissan Motor Co., Ltd. Gear
US7771821B2 (en) 2003-08-21 2010-08-10 Nissan Motor Co., Ltd. Low-friction sliding member and low-friction sliding mechanism using same
US9186773B2 (en) 2003-11-13 2015-11-17 Applied Materials, Inc. Retaining ring with shaped surface
US7927190B2 (en) 2003-11-13 2011-04-19 Applied Materials, Inc. Retaining ring with shaped surface
US7344434B2 (en) 2003-11-13 2008-03-18 Applied Materials, Inc. Retaining ring with shaped surface
WO2005049274A3 (fr) * 2003-11-13 2005-11-03 Applied Materials Inc Bague de retenue a surface façonnee
KR101252751B1 (ko) 2003-11-13 2013-04-09 어플라이드 머티어리얼스, 인코포레이티드 성형 표면을 갖는 유지 링
US8585468B2 (en) 2003-11-13 2013-11-19 Applied Materials, Inc. Retaining ring with shaped surface
WO2005049274A2 (fr) * 2003-11-13 2005-06-02 Applied Materials, Inc. Bague de retenue a surface façonnee
US9937601B2 (en) 2003-11-13 2018-04-10 Applied Materials, Inc. Retaining ring with Shaped Surface
US10766117B2 (en) 2003-11-13 2020-09-08 Applied Materials, Inc. Retaining ring with shaped surface
US11260500B2 (en) 2003-11-13 2022-03-01 Applied Materials, Inc. Retaining ring with shaped surface
US11577361B2 (en) 2003-11-13 2023-02-14 Applied Materials, Inc. Retaining ring with shaped surface and method of forming
US11850703B2 (en) 2003-11-13 2023-12-26 Applied Materials, Inc. Method of forming retaining ring with shaped surface
WO2007045479A1 (fr) * 2005-10-21 2007-04-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Spheres creuses pourvues d'une enveloppe et procede et dispositif pour produire ces spheres creuses

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