WO2000073712A3 - Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen - Google Patents

Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen Download PDF

Info

Publication number
WO2000073712A3
WO2000073712A3 PCT/DE2000/001728 DE0001728W WO0073712A3 WO 2000073712 A3 WO2000073712 A3 WO 2000073712A3 DE 0001728 W DE0001728 W DE 0001728W WO 0073712 A3 WO0073712 A3 WO 0073712A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermobranches
thermoelectric
foam structure
thermoelectrical
strips
Prior art date
Application number
PCT/DE2000/001728
Other languages
English (en)
French (fr)
Other versions
WO2000073712A2 (de
Inventor
Gunter Preiss
Hans Boellinghaus
Original Assignee
Vtv Verfahrenstech Verwaltung
Dettmann Birgit
Gunter Preiss
Hans Boellinghaus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19925960A external-priority patent/DE19925960A1/de
Application filed by Vtv Verfahrenstech Verwaltung, Dettmann Birgit, Gunter Preiss, Hans Boellinghaus filed Critical Vtv Verfahrenstech Verwaltung
Priority to EP00945576A priority Critical patent/EP1144920A2/de
Priority to AU59630/00A priority patent/AU5963000A/en
Publication of WO2000073712A2 publication Critical patent/WO2000073712A2/de
Publication of WO2000073712A3 publication Critical patent/WO2000073712A3/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/854Thermoelectric active materials comprising inorganic compositions comprising only metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

Es werden neuartige Thermoschenkel (7) mit Schaumstrukturanteil und daraus resultierende, neuartige Anordnungen derselben in grenzschichtgeschäumten thermoelektrischen Strängen (28), druckkontaktierten thermoelektrischen Strängen (32) sowie übliche Verbundarten mit durchgehend geschäumten Thermoschenkeln (11), zusammengesetzten Thermoschenkeln (12) und integrierten Aktiv-Passiv-Thermoschenkeln (14) vorgestellt, die eine höhere Ausnutzung des thermoelektrischen Potentials bereits üblicher und eine Verwendung bislang als Thermoelektrika (3) nicht ausnutzbarer, halbleitender Stoffe mit Erfolg hohen thermoelektrischen Wirkungsgrades gestatten. Der insgesamte Schaumstrukturanteil ist verschiedenartig mit homogenen oder differenzierten Wirkphasenanteilen versehen und generell vorgesehen und befähigt, die wirkungsgradmindernden Verlustwärmeströme (8) zu minimieren. Es werden begleitende und nachformierende feldeffektive Verfahren zur Optimierung der thermoeleltroaktiven Wirkphasen (30) in sich bildenden oder aushärtenden, geschlossenzelligen Strukturen nichtmetallischer Schäume (31) oder Sinterverbände beschrieben. Anwendungsbereiche sind in der Thermostromerzeugung und Peltiertechnik gleichermassen vorgesehen.
PCT/DE2000/001728 1999-06-01 2000-05-30 Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen WO2000073712A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP00945576A EP1144920A2 (de) 1999-06-01 2000-05-30 Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen
AU59630/00A AU5963000A (en) 1999-06-01 2000-05-30 Method and device for forming thermobranches containing a foam structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19925960.7 1999-06-01
DE19925960A DE19925960A1 (de) 1998-12-04 1999-06-01 Thermoschenkel mit Schaumstrukturanteil

Publications (2)

Publication Number Publication Date
WO2000073712A2 WO2000073712A2 (de) 2000-12-07
WO2000073712A3 true WO2000073712A3 (de) 2001-08-23

Family

ID=7910458

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001728 WO2000073712A2 (de) 1999-06-01 2000-05-30 Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen

Country Status (3)

Country Link
EP (1) EP1144920A2 (de)
AU (1) AU5963000A (de)
WO (1) WO2000073712A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114315353A (zh) * 2021-12-30 2022-04-12 吉林大学 一种P型(Bi,Sb)2Te3基多孔热电材料的可控制备方法
CN115188877A (zh) * 2022-07-27 2022-10-14 武汉理工大学 一种制备强织构和高热电性能柔性热电薄膜的方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339715A1 (de) * 1988-04-27 1989-11-02 Theodorus Bijvoets Thermoelektrische Anordnung
JPH02106079A (ja) * 1988-10-14 1990-04-18 Ckd Corp 電熱変換素子
EP0455051A2 (de) * 1990-04-20 1991-11-06 Matsushita Electric Industrial Co., Ltd. Vakuumisolierter thermoelektrischer Halbleiter bestehend aus einer porösen Struktur und thermoelektrisches Bauelement
JPH043475A (ja) * 1990-04-20 1992-01-08 Matsushita Electric Ind Co Ltd 電子部品
JPH04199858A (ja) * 1990-11-29 1992-07-21 Matsushita Electric Ind Co Ltd 電子冷却パネル
US5275001A (en) * 1991-10-07 1994-01-04 Matsushita Electric Industrial Co., Ltd. Thermoelectric cooling device
US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
US5525162A (en) * 1995-06-26 1996-06-11 The United States Of America As Represented By The Secretary Of The Army Thermal conductivity enhancement technique
JPH08335721A (ja) * 1995-06-08 1996-12-17 Isuzu Motors Ltd ポーラス状熱発電素子の製造方法
JPH0969653A (ja) * 1995-08-31 1997-03-11 Isuzu Motors Ltd 熱電材料及びその製造方法
JPH1041556A (ja) * 1996-07-25 1998-02-13 Mitsubishi Heavy Ind Ltd 多孔質熱電半導体及びその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339715A1 (de) * 1988-04-27 1989-11-02 Theodorus Bijvoets Thermoelektrische Anordnung
JPH02106079A (ja) * 1988-10-14 1990-04-18 Ckd Corp 電熱変換素子
EP0455051A2 (de) * 1990-04-20 1991-11-06 Matsushita Electric Industrial Co., Ltd. Vakuumisolierter thermoelektrischer Halbleiter bestehend aus einer porösen Struktur und thermoelektrisches Bauelement
JPH043475A (ja) * 1990-04-20 1992-01-08 Matsushita Electric Ind Co Ltd 電子部品
JPH04199858A (ja) * 1990-11-29 1992-07-21 Matsushita Electric Ind Co Ltd 電子冷却パネル
US5275001A (en) * 1991-10-07 1994-01-04 Matsushita Electric Industrial Co., Ltd. Thermoelectric cooling device
US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
JPH08335721A (ja) * 1995-06-08 1996-12-17 Isuzu Motors Ltd ポーラス状熱発電素子の製造方法
US5525162A (en) * 1995-06-26 1996-06-11 The United States Of America As Represented By The Secretary Of The Army Thermal conductivity enhancement technique
JPH0969653A (ja) * 1995-08-31 1997-03-11 Isuzu Motors Ltd 熱電材料及びその製造方法
JPH1041556A (ja) * 1996-07-25 1998-02-13 Mitsubishi Heavy Ind Ltd 多孔質熱電半導体及びその製造方法

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 320 (E - 0950) 10 July 1990 (1990-07-10) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 146 (E - 1188) 10 April 1992 (1992-04-10) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 530 (E - 1287) 30 October 1992 (1992-10-30) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 07 31 July 1997 (1997-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 06 30 April 1998 (1998-04-30) *

Also Published As

Publication number Publication date
WO2000073712A2 (de) 2000-12-07
EP1144920A2 (de) 2001-10-17
AU5963000A (en) 2000-12-18

Similar Documents

Publication Publication Date Title
Ohmi et al. In situ substrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment
Pelaz et al. Ion-beam-induced amorphization and recrystallization in silicon
Miner et al. Thermo-electro-mechanical refrigeration based on transient thermoelectric effects
Himpsel Inverse photoemission from semiconductors
WO2000073712A3 (de) Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen
Zheng et al. Kinetic Monte Carlo simulations of nanocolumn formation in two-component epitaxial growth
Safonov et al. Intrinsic mechanism of nonlinear damping in magnetization reversal
Giguère et al. Blistering of GaAs by low keV H, D, and He ions
Fujita et al. Nitrogen related shallow thermal donors in silicon
JP4273533B2 (ja) 半導体装置およびその製造方法
Lagnado et al. Integration of Si and SiGe with Al2O3 (sapphire)
Joshi et al. Monte Carlo analysis of high‐field hole diffusion coefficients in nondegenerate GaAs
Hader et al. Thermal behavior of a thin layer carrying pulsating signals in the dual-phase-lag model
Fetterman Light-millimeter wave interactions in semiconductor devices
Kim et al. An Approach for Supporting Real-Time Scheduling in the Unix Evironment
Joye et al. Asymmetric Drainage in Foam Films
Dagani Taking baby steps to moletronics
Hellberg et al. FINDING PHASE SEPARATION IN THE t–J MODEL NUMERICALLY
Powell et al. Self-consistent surface mobility and interface charge modeling in conjunction with experiment of 6H-SiC MOSFETs
Khashimov Structural and physical characteristics of InSb single crystals grown under Near-Zero gravity conditions
Prieto-Depedro et al. Atomistic modeling of the Ge composition dependence of solid phase epitaxial regrowth in SiGe alloys
Hussain et al. Homogeneous and Heterogeneous Material Based Nanotube Tunnel Field Effect Transistor with Core-Shell Gate Stacks
Lee et al. Phase Stability of Bi2212 and Bi2223 Thin Films Fabricated by ion Beam Sputtering
Mayer Silicon germanium carbon heteroepitaxial growth on silicon
OGAWA et al. Magnetic effect on Pettier super cooling system

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2000945576

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2000945576

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP