Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
  • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
  • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
  • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
  • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
  • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
  • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
  • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
  • G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
  • G01D5/34707—Scales; Discs, e.g. fixation, fabrication, compensation
  • G01D5/34715—Scale reading or illumination devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/10—Integrated devices
  • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Definitions

• the invention relates to an integrated optoelectronic thin-film sensor for a measuring system according to claim 1 and a method for its production according to claim 25.
• a measuring system is known from GB 1, 504,691 and the corresponding DE 25 1 1 350 A1, in which the displacement of a first assembly is determined relative to a second assembly.
• two grids are provided which are at a constant distance from each other and one of which is attached to an assembly. If the second grating is irradiated with divergent light from a light source, the first grating generates a periodic image of the second grating, this image moving when there is a relative movement between the two assemblies.
• photodetectors are provided which have a periodic structure and are firmly connected to the second assembly. The first is a reflective grating and the second grating and the photodetectors are essentially in one plane.
• the light source and the second grating can also be replaced by a structured light source that the create the same image as a conventional light source and a grid.
• the structure of the photodetectors interacts with the image in such a way that there is a periodic change in the output signal of the photodetectors if there is a relative movement between the first and second assemblies.
• the disadvantage here is that the individual modules are implemented discretely and separately. As a result, a relatively large installation space is required for the entire arrangement.
• a scanning grating is arranged on the side of a translucent carrier facing a scale.
• the scanning grating is irradiated by a light source such that an image of the grating is projected onto the scale.
• the translucent carrier for the first grating is connected to the semiconductor material in which the structured photodetector is implemented in such a way that the scanning grating and the photodetector are only offset from one another in the measuring direction, but are at the same distance from the scale.
• the scanning grating is arranged on the side of the translucent carrier facing away from the scale.
• an optochip is arranged on the same translucent carrier that contains the photodetector.
• the disadvantage of the first embodiment is that the translucent carrier on which the scanning grating is applied has to be connected to the semiconductor material in which the structured photodetector is implemented. This connection must be made very precisely so that the structure of the photodetector is aligned parallel to the grating and the structure and grating are at the same distance from the scale. This exact connection between carrier and semiconductor material is therefore very difficult to achieve. Furthermore, the second embodiment has the disadvantage that that an optochip must be attached to the translucent carrier.
• This sensor has the disadvantage that the photodetector structure and the structured light source cannot necessarily be at the same distance from a scale, since the light-emitting diode and the photodetector are realized one above the other. This different distance from the scale in turn significantly deteriorates the optical properties of the sensor.
• both a structured photodetector and a structured light source in the form of at least one light-emitting diode of a sensor are realized on a common semiconductor layer made of Ill / V semiconductor material, such as gallium arsenide GaAs.
• Ill / V semiconductor material such as gallium arsenide GaAs.
• an optical sensor for a measuring system which has a light-emitting component, a light-receiving component, and at least one optical component which acts on the light beam emitted by the light-emitting component before the latter emits the light receiving component reached.
• This sensor has a spacer element, which defines a distance between the light-emitting or light-receiving component and the optical component.
• the spacer element is designed such that it is connected to another component. It is thereby achieved that the optical sensor sends and receives optical signals on one side, which is why optical components are arranged on this side, and has lines for electrical signals on its other side.
• the light-receiving component, the light-emitting component, the at least one optical component and the spacer element all consist of separate components which have to be manufactured and assembled separately. This is very expensive given the accuracies required for optical sensors in measuring systems. Furthermore, the optical sensor is relatively voluminous, since the individual components also have to be handled separately.
• an electronic hybrid component in which an implanted chip is arranged on a carrier substrate in a chip-on-chip arrangement.
• the carrier substrate has at least one cavity in which there is an electrical insulation layer with an overlying metal layer.
• the chip implanted in the cavity is contacted with the metal layer, whereby this is used as an electrical line.
• the implanted chip is a light emitting diode, the metal layer are also used to reflect their radiation on the walls of the cavity.
• This arrangement has the disadvantage that both the radiation direction of the light-emitting diode and its electrical contacts are arranged on one side of the semiconductor layer or are emitted on this one side.
• DE 196 18 593 A1 discloses a radiation-sensitive detector element with an active region, the active region being formed between two adjacent layer regions of a layer arrangement with different charge carriers and within which a conversion of incident electromagnetic radiation into electrical signals takes place.
• the position of the active area relative to the two delimiting surfaces is selected taking into account the penetration depth of the radiation in such a way that at least two contact elements for connecting the detector element to an evaluation circuit can be mounted on a surface that lies opposite the radiation-sensitive surface on which the incident one is Radiation strikes.
• the following method steps are used in the production method of such a detector element.
• An etch stop layer is produced in a defined doped semiconductor layer just below a delimiting first surface.
• a spatially delimited layer region is then produced above the etch stop layer, which has a different doping than the semiconductor layer, and the detector element is contacted with at least two contact elements on a side that is opposite the second surface.
• a scanning head for a scale with a division consisting essentially of a single semiconductor layer which has a plurality of structured photodetectors on the side facing the scale, which further has a blind hole which on the Scale facing side is limited by a transmission grid.
• the transmission grid is implemented in a layer applied to the semiconductor layer or by a special configuration of the process for making the blind hole.
• a light source is arranged in the blind hole, which emits in the direction of the transmission grating.
• the disadvantage here is that there is a relatively large distance between the transmitting grating and the light source.
• Another disadvantage is that the photodetectors are contacted on the side facing the scale.
• an integrated optoelectronic sensor for scanning a division is known.
• the sensor consists of a single semiconductor layer which has a plurality of photodetectors on the side facing away from the division.
• the semiconductor material is at least partially removed in the region of the photodetectors, so that light can penetrate into the light-detecting region of the photodetectors from the side of the sensor facing the division.
• the sensor On the side facing away from the division, the sensor has a light source, in the area of which the entire thickness of the opaque components of the sensor is broken, so that the light source shines through the sensor.
• the semiconductor layer is connected to a transparent carrier body which has at least one further graduation by which the radiation from the light source is optically influenced.
• the disadvantage here is that the at least one division applied to the carrier body is relatively far from the photodetectors in the region of the photodetectors and relatively far from the light source in the region of the light source. As a result, the optical properties deteriorate.
• Another disadvantage is that in the field of photodetectors in one special process step in the manufacture of semiconductor material must be removed.
• the sensor according to the invention has the advantage that the semiconductor layer in which the photodetectors are implemented is very thin. As a result, the distance between the grids applied to the carrier and the photodetectors and the light source and the photodetectors is very small. This improves the optical properties of the sensor. Another advantage is that no special process step is required to reduce the thickness of the semiconductor layer in the area of the photodetectors: the semiconductor layer is already so thin that the detecting areas of the photodetectors extend to the limit of the carrier.
• FIG. 2 a detail from FIG. 1 with an alternative realization
• FIG. 3 a detail from FIG. 1 with an alternative realization
• FIG. 4 a detail from FIG. 1 with an alternative realization
• FIG. 5 a detail from FIG. 1 with an alternative implementation
• FIG. 6 a detail from FIG. 1 with an alternative realization
• FIG. 7 a section through a further possible thin-film sensor according to the invention with an associated material measure
• FIG. 8 a possible schematic process sequence for the method according to the invention.
• FIG. 9 a further possible schematic process sequence for the method according to the invention.
• Figure 10 another possible schematic process flow for the inventive method.
• the sensor according to the invention is explained below on the basis of an exemplary embodiment which includes a length measuring system. However, it is possible, without significant changes, to use the thin-film sensor according to the invention also in an angle measuring system or a two-dimensional measuring system.
• the optoelectronic thin-film sensor according to the invention and a scale 10 are shown schematically in FIG.
• the thin-film sensor consists of a thin semiconductor layer 11.3, preferably made of silicon, in which photodetectors 2.1 and 2.2 are integrated.
• Passivation layers 11.1 and 11.2, which consist of silicon oxide and / or silicon nitride, are arranged on the side of the semiconductor layer 11.3 facing away from the scale 10.
• the photodiodes 2.1 and 2.2 are produced directly in the semiconductor layer 1 1.3, which forms the thin-film sensor according to the invention.
• the two photodiodes 2.1 and 2.2 only symbolize at least one functional assembly, which can contain several photodiodes or also several interconnected groups of photodiodes, for example for single-field scanning.
• the photodiodes 2.1 and 2.2 can be structured.
• photodiodes 2.1 and 2.2 are arranged symmetrically to a radiation source 1 for electromagnetic radiation, in particular light, which is preferably implemented by a light-emitting diode 1.
• the light-emitting diode 1 can be connected to the semiconductor layer 11.3 as a separate component, as shown in the figure.
• the photodiodes 2.1 and 2.2 can also be implemented in the semiconductor layer 11.3. Then, by appropriate doping, a light-emitting diode 1 is produced in a semiconductor layer 11.3 from a suitable semiconductor material, for example gallium arsenide.
• the light-emitting diode 1 can alternatively also be realized by an organic or inorganic polymer film. This is then applied directly to the carrier 7. The contacts 3.2 for the light emitting diode 1 are then to be led from the side of the semiconductor layer 11.3 facing away from the scale 10 to the polymer film.
• a separate SMD component is advantageously preferred for the light-emitting diode 1. So that the radiation from the light-emitting diode 1, which is arranged on the same side of the semiconductor layer 11.3 as the photodiodes 2.1 and 2.2, can reach the other side of the semiconductor layer 11.3, the semiconductor layer 11.3 is completely etched through at this point, for example by means of anisotropic etching.
• the semiconductor layer 11.3 is on the side facing the scale 10 with a transparent one for the radiation emitted by the light-emitting diode 1
• Carrier 7 connected. This connection can be achieved by gluing, thermal and / or anodic bonding.
• This transparent support 7 has one or more divisions 8.1, 8.2 and 8.3, the exact ones
• Divisions 8.1, 8.2 and 8.3 can also be introduced into the surface of the carrier 7 if corresponding depressions have previously been provided in the carrier 7 for the divisions 8.1, 8.2 and 8.3, as shown in FIG.
• the optoelectronic thin-film sensor constructed as shown in FIG. 1 or 7 is arranged opposite a scale 10 which has a graduation 9. If the light-emitting diode 1 sends a light beam in the direction of the scale 10, this light beam is first diffracted at the graduation 8.2, then hits the graduation 9 of the scale 10, is refracted there and is again bent at the gradations 8.1 and 8.3 before the light beam hits the Photo diodes 2.1 and 2.2 hits, through which the intensity of the light beam is detected.
• the output signal of the photodiodes 2.1 and 2.2 is fed to at least one amplifier 12 and its output signal to at least one interpolator 12, it being possible for all of these assemblies to be integrated into the semiconductor layer 11.3 or to be implemented separately.
• the photo elements 2.1 and 2.2 are carried out on the surface of the semiconductor layer 11.3 on the side facing away from the scale 10, as shown in FIGS. 1 and 7.
• the thickness of the active layer of the photodetectors 2.1 and 2.2 can be optimally adjusted depending on the wavelength, e.g. B. 25 ⁇ m thickness of the active area of the photodiodes 2.1 and 2.2 at 860 nm wavelength of the electromagnetic radiation emitted by the light-emitting diode 1.
• the total thickness of the semiconductor layer 1 1.3 is determined by this thickness required for the photo elements 2.1 and 2.2.
• a reflector 4.1 and 4.2 can be applied to the surface of the photo elements 2.1 and 2.2, under the passivation layer 11.2. This consists, for example, of aluminum and is applied to the photo elements 2.1 and 2.2 using sputtering technology. If this reflector 4.1 and 4.2 is conductive, it can also be used as an electrical connection for the photodiodes 2.1 and 2.2. Otherwise emerging light rays are reflected again in the active area of the photodiodes 2.1 and 2.2 by the reflectors 4.1 and 4.2 and thus increase the photocurrent. It is also possible to structure the contacts of the photodiodes 2.1 and 2.2.
• the contacts have a meandering or finger-shaped structure. This causes a spatially homogeneous sensitivity over the entire area of the photo elements 2.1 and 2.2.
• the side facing the light entry that is to say the underside of the carrier 7
• the layer thickness of this antireflection coating is chosen depending on the wavelength of the radiation emitted by the light-emitting diode 1.
• the light source for example a light-emitting diode 1
• the light source is integrated and electrically contacted on the same level as the photodiodes 2.1 and 2.2 and the amplifier and interpolation unit 12, as shown in FIGS. 1 and 7.
• a completely continuous opening is made in the semiconductor layer 1 1.3 in an etching process.
• the LED 1 is populated from above as an SMD element.
• the light-emitting diode 1 can also be applied to the carrier 7 and contacted there.
• the opening made in the semiconductor layer 1 1.3 must be sufficiently large for this.
• the conductor tracks for the contacting of the light-emitting diode are then either arranged completely on the carrier 7 or they first run on the side of the semiconductor layer 11.3 facing away from the scale 10, then perpendicular to it along the thickness of the semiconductor layer up to the carrier 10, around the light-emitting diode arranged there 1 to contact.
• a further alternative to realizing a light-emitting diode 1 is then that a porous semiconductor structure is integrated into the semiconductor layer 11.3, for example by an anodic etching process in hydrofluoric acid. Corresponding PN junctions are also arranged in the region of the porous semiconductor structure by doping, so that a light-emitting diode 1 is produced.
• a housing made of silicon or, in particular, gallium arsenide GaAs can be used as the carrier body 1.2 of the light-emitting diode 1, as shown in FIG. This ensures that the carrier body 1.2 has the same coefficient of expansion as the light-emitting diode 1, which is usually made of GaAs.
• the carrier body 1.2 for the light-emitting diode 1 If the materials mentioned are used as the carrier body 1.2 for the light-emitting diode 1, it is also ensured that, due to the good thermal conductivity of the carrier body 1.2, a good heat sink is produced for the light-emitting diode 1. This has a positive effect on the service life and performance of the light-emitting diode 1.
• the back of the carrier body 1.2 of the light-emitting diode 1 can be protected against heat radiation by a ceramic shield, and heat radiation can also be prevented.
• the carrier body 1.2 of the light-emitting diode 1 also serves as electrical contact for the SMD assembly on the surface of the semiconductor layer 11.3 and for the contacting of the light-emitting diode 1 itself.
• a lens 1.1 can be applied to the radiating surface of the light-emitting diode 1 in order to influence the beam path, as shown in Figure 2.
• passivation layers 11.1 and 11.2 for example made of SiO 2 and Si 3 N 4 , which, like the semiconductor layer 11.3, are likewise applied in accordance with a CVD process (chemical vapor deposition).
• the preferred material for the semiconductor layer 11.3 is silicon with a crystal orientation (1-0-0). Silicon with this orientation is also preferred for CMOS integration of the amplifier and interpolation unit 12.
• the grating structures 8.1, 8.2 and 8.3 can be designed as a phase grating and / or as an amplitude grating in the form of chrome grating.
• the lattice structures 8.1, 8.2 and 8.3 are preferably applied on the side facing away from the semiconductor layer 11.3. However, it is also possible for the lattice structures 8.1, 8.2 and 8.3 to be applied to the side of the carrier 7 facing the semiconductor layer 11.3, as shown in FIG. 7.
• an underfiller can be used to achieve an optimal connection between the carrier 7 and the semiconductor layer 1 1.3.
• the lattice structures 8.1, 8.2 and 8.3 can also be applied first to the carrier 7 and then the semiconductor layer 11.3 via the lattice structures 8.1, 8.2 and 8.3.
• depressions with the thickness of the lattice structures 8.1, 8.2 and 8.3 can be provided in the carrier 7, into which the lattice structures 8.1, 8.2 and 8.3 are introduced, so that the carrier 7, including the lattice structures, has a flat surface for applying the semiconductor layer 11.3 forms.
• the lattice structure 8.2 for the light-emitting diode 1 is to be applied on the side of the carrier 7 facing away from the scale 10, this can be done in that when etching the opening for the light-emitting diode 1 in the region of the carrier 7, webs of semiconductor material remain which have a lattice structure 8.2 form the desired optical effect, as shown in FIG. 6.
• the carrier 7 can have at least one lattice structure on both its side facing away from the scale 10 and its side facing the scale 10. At least this two grating structures applied on both sides of the carrier 7 can be realized both as a phase grating and as an amplitude grating as well as a combination of phase and amplitude grating.
• the structuring of the phase grating can not only be arranged parallel to the grating lines of the division 9 on the scale 10, but can also be selected perpendicular to it. Such an azimuthal arrangement of the lattice structures scans more areas on the graduation 9 at the same time, as a result of which the sensitivity to contamination is reduced.
• Another alternative is to introduce an optical lens 1.1 into the carrier 7 below the radiation plane of the light-emitting diode 1, as shown in FIG. 3. Because of the silicon opening, the lens 1.1 can be applied in the carrier 7 on the side of the carrier 7 facing and / or facing away from the scale 10. Technologically, such a lens 1.1 is produced, for example, by electron lithography in PMMA resist. The curvature of the lens 1.1 in the resist is generated by different radiation doses in the resist, the resist structure is then transferred into the carrier 7 by plasma etching. With this technology, it is also possible for the lens 1.1 itself to have a structure, that is, for. B. to impress a phase grating 8.2. The method step for introducing an optical lens 1.1 into the carrier 7 can also take place before the semiconductor layer 1 1.3 is deposited.
• the carrier 7 can advantageously consist of the material Pyrex, which has the same coefficient of linear expansion as silicon. This reduces stresses, increases the mechanical stability in the silicon and thus avoids dislocation lines in the silicon, which can lead to electrical interference.
• Other suitable materials for the carrier 7 are sapphire and suitable borosilicate glasses.
• the measuring system in which the sensor according to the invention is used can be both a one-dimensional measuring system, such as a length or angle measuring system, and a two-dimensional measuring system, such as a cross grating measuring system, which uses a cross line or chess scale. has board grid.
• the scanning system required for this has either two sensors according to the invention, advantageously oriented orthogonally to one another.
• two groups of photo elements with one-dimensional structuring can be integrated into a sensor, the alignment of which corresponds to the measuring directions or which are orthogonal to one another.
• the transmission grid is then designed as a two-dimensional grid, for example a cross line or checkerboard grid, and is therefore only required in a simple manner.
• the further electronic circuits 12 can also be integrated according to the invention in a separate semiconductor layer 1 1.4, which is arranged spatially above the semiconductor layer 11.3 with the optoelectronic assemblies, as is shown in FIG. 5. Since, according to the invention, the electrical contacts are already arranged exclusively on the upper side of the semiconductor layer 1 1.3 with the optoelectronic assemblies, contacting with the semiconductor layer 1 1.4 arranged above them is very easily possible in chip on chip technology. As a result, the lengths of the connecting lines between the optoelectronic and the electronic assemblies can be significantly shortened, which leads to improved immunity to interference and enables faster signal processing due to a higher clock rate.
• FIGS. 8, 9 and 10 represent three different procedures and which have already been mentioned in part, are described in more detail below.
• the manufacturing process is essentially divided into three areas: processing of the carrier 7, processing of the semiconductor layer 11.3 and connection of the two parts.
• carrier 7 and semiconductor layer 1.3 can be processed either separately from one another or if these are already connected to one another.
• the carrier 7 is first processed and then either the already completed semiconductor layer 11.3 is applied or the semiconductor layer is still being processed after being connected to the carrier 7.
• the semiconductor layer 11.3, possibly already finished can be applied to the carrier 7 first and then the carrier 7 - and possibly the semiconductor layer 11.3 - can be finished.
• the order in which the carrier 7, the semiconductor layer 1.3, and their connection to one another are processed can essentially be chosen freely, which results in several alternative process sequences. There is only the restriction that after connecting the semiconductor layer 11.3 to the side of the carrier 7 facing away from the scale 10, it is no longer possible to apply lattice structures 8.1, 8.2 and 8.3 to this side of the carrier 7 facing away from the scale 10.
• semiconductor material preferably silicon
• a crystalline, polycrystalline, amorphous, porous, micro- or nanocrystalline semiconductor layer 11.3 is deposited.
• the semiconductor layer 11.3 can first be processed on a wafer and only connected to the carrier 7 later.
• the semiconductor layer 1 1.3 can also be sputtered on and then melted with a laser, so that the required semiconductor layer 1 1.3 forms after the semiconductor material has cooled.
• semiconductor material can be reduced to a thickness of approximately 30 ⁇ m by mechanical processing and then chemically lapped.
• This thin semiconductor layer 11.3 is then connected to the carrier 7, for example by bonding processes.
• the photodiodes 2.1 and 2.2 are produced by appropriately doping the areas in which the photodetectors are to be arranged.
• the further assemblies such as amplifier and interpolator unit 12 can also be generated if they are provided in the same semiconductor layer 11.3.
• conductor tracks 3.1 and contacts 3.2, as well as metallic coatings 4.1 and 4.2 of the rear sides of the photodiodes 2.1 and 2.2, are applied. This is done by applying a metallization layer made of aluminum-titanium oxide, which is structured accordingly in known photochemical processes, to the semiconductor layer 11.3.
• the light-emitting diode 1 optionally in a housing made of semiconductor material and with a ceramic shield, is connected in an electrically conductive manner to the contact points 3.2. If a polymer light-emitting diode 1 is used, it is only contacted later after the carrier 7 has been connected to the semiconductor layer 11.3.
• an additional semiconductor layer 11.4, in which the additional modules 12 are implemented can then be connected to the semiconductor layer 11.3 from above.
• This connection can be carried out using chip-on-chip technology, so that the two semiconductor layers 11.3 and 1 1.4 are connected to one another in an electrically conductive manner.
• a lens 1.1 into the carrier 7 which collimates the light from the light-emitting diode 1.
• a template for the lens is formed in a PMMA resist using electron beam lithography. The dose during the exposure to electrons is changed so that the shape of an optical lens 1.1 results after the development process. This is transferred into the material of the carrier 7, for example by means of a plasma etching process.
• phase gratings can be produced on the carrier 7 in the same way as that just described for a lens.
• Amplitude grids are applied to the carrier 7 by known methods, for example as a chrome grating.
• Carrier 7 and semiconductor layer 11.3 can be connected at any time according to FIGS. 8, 9 and 10.
• the connection is advantageous when the carrier 7 and the semiconductor layer 11.3 are finished, since the carrier 7 and the semiconductor layer 11.3 can then be processed separately from one another, as shown in FIG.
• it can be advantageous to deposit the semiconductor layer 1 1.3 directly on the carrier 7, which is in any processing stage.
• semiconductor material can also be selectively applied to the carrier 7 only where semiconductor modules are also provided. It is obvious to the person skilled in the art that the specified method steps can largely be combined with one another as desired and thus result in a large number of possible combinations for a production method of the sensor, which cannot all be described here exhaustively.

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• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Optical Transform (AREA)
• Length Measuring Devices By Optical Means (AREA)
• Diffracting Gratings Or Hologram Optical Elements (AREA)
• Micromachines (AREA)
• Light Receiving Elements (AREA)

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• 1999
  • 1999-04-21 DE DE19917950A patent/DE19917950A1/de not_active Withdrawn
• 2000
  • 2000-04-18 WO PCT/EP2000/003509 patent/WO2000063654A1/de not_active Ceased
  • 2000-04-18 DE DE50014119T patent/DE50014119D1/de not_active Expired - Lifetime
  • 2000-04-18 US US09/959,357 patent/US6621104B1/en not_active Expired - Fee Related
  • 2000-04-18 EP EP00929380A patent/EP1175600B2/de not_active Expired - Lifetime
  • 2000-04-18 AT AT00929380T patent/ATE355506T1/de not_active IP Right Cessation
  • 2000-04-18 JP JP2000612707A patent/JP4688297B2/ja not_active Expired - Fee Related
  • 2000-04-18 EP EP07003460A patent/EP1788361A3/de not_active Ceased

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