DE19917950A1 - Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung - Google Patents

Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung

Info

Publication number
DE19917950A1
DE19917950A1 DE19917950A DE19917950A DE19917950A1 DE 19917950 A1 DE19917950 A1 DE 19917950A1 DE 19917950 A DE19917950 A DE 19917950A DE 19917950 A DE19917950 A DE 19917950A DE 19917950 A1 DE19917950 A1 DE 19917950A1
Authority
DE
Germany
Prior art keywords
semiconductor layer
carrier
scale
sensor according
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19917950A
Other languages
German (de)
English (en)
Inventor
Peter Speckbacher
Dieter Michel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dr Johannes Heidenhain GmbH
Original Assignee
Dr Johannes Heidenhain GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7905268&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE19917950(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Dr Johannes Heidenhain GmbH filed Critical Dr Johannes Heidenhain GmbH
Priority to DE19917950A priority Critical patent/DE19917950A1/de
Priority to JP2000612707A priority patent/JP4688297B2/ja
Priority to PCT/EP2000/003509 priority patent/WO2000063654A1/de
Priority to EP00929380A priority patent/EP1175600B2/de
Priority to AT00929380T priority patent/ATE355506T1/de
Priority to DE50014119T priority patent/DE50014119D1/de
Priority to EP07003460A priority patent/EP1788361A3/de
Priority to US09/959,357 priority patent/US6621104B1/en
Publication of DE19917950A1 publication Critical patent/DE19917950A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
    • G01D5/34707—Scales; Discs, e.g. fixation, fabrication, compensation
    • G01D5/34715—Scale reading or illumination devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Transform (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Micromachines (AREA)
  • Light Receiving Elements (AREA)
DE19917950A 1999-04-21 1999-04-21 Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung Withdrawn DE19917950A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE19917950A DE19917950A1 (de) 1999-04-21 1999-04-21 Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung
JP2000612707A JP4688297B2 (ja) 1999-04-21 2000-04-18 測定システム
PCT/EP2000/003509 WO2000063654A1 (de) 1999-04-21 2000-04-18 Integrierter optoelektronischer dünnschichtsensor und verfahren zu dessen herstellung
EP00929380A EP1175600B2 (de) 1999-04-21 2000-04-18 Integrierter optoelektronischer dünnschichtsensor
AT00929380T ATE355506T1 (de) 1999-04-21 2000-04-18 Integrierter optoelektronischer dünnschichtsensor
DE50014119T DE50014119D1 (de) 1999-04-21 2000-04-18 Integrierter optoelektronischer dünnschichtsensor
EP07003460A EP1788361A3 (de) 1999-04-21 2000-04-18 Integrierter optoelektronischer Dünnschichtsensor für ein Linear-Verschiebungs-Messsystem
US09/959,357 US6621104B1 (en) 1999-04-21 2000-04-18 Integrated optoelectronic thin-film sensor and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19917950A DE19917950A1 (de) 1999-04-21 1999-04-21 Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
DE19917950A1 true DE19917950A1 (de) 2000-10-26

Family

ID=7905268

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19917950A Withdrawn DE19917950A1 (de) 1999-04-21 1999-04-21 Integrierter optoelektronischer Dünnschichtsensor und Verfahren zu dessen Herstellung
DE50014119T Expired - Lifetime DE50014119D1 (de) 1999-04-21 2000-04-18 Integrierter optoelektronischer dünnschichtsensor

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50014119T Expired - Lifetime DE50014119D1 (de) 1999-04-21 2000-04-18 Integrierter optoelektronischer dünnschichtsensor

Country Status (6)

Country Link
US (1) US6621104B1 (enExample)
EP (2) EP1175600B2 (enExample)
JP (1) JP4688297B2 (enExample)
AT (1) ATE355506T1 (enExample)
DE (2) DE19917950A1 (enExample)
WO (1) WO2000063654A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008053184A1 (en) 2006-10-28 2008-05-08 Renishaw Plc Opto electronic read head
DE102010002902A1 (de) * 2010-03-16 2011-09-22 Dr. Johannes Heidenhain Gmbh Abtasteinheit für eine optische Positionsmesseinrichtung
EP3150970A1 (de) * 2015-09-29 2017-04-05 Dr. Johannes Heidenhain GmbH Optisches schichtsystem
DE102004042670B4 (de) 2003-09-02 2018-07-12 CiS Forschungsinstitut für Mikrosensorik GmbH Mikrooptisches Strahler- und Empfängersystem

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4812189B2 (ja) * 2001-06-15 2011-11-09 オリンパス株式会社 光学式検出装置
JP2003152299A (ja) * 2001-07-10 2003-05-23 Canon Inc 配線接続構造及びその製造方法
US7038288B2 (en) 2002-09-25 2006-05-02 Microsemi Corporation Front side illuminated photodiode with backside bump
JP4021382B2 (ja) 2003-07-28 2007-12-12 オリンパス株式会社 光学式エンコーダ及びその製造方法並びに光学レンズモジュール
WO2012022003A1 (de) * 2010-08-19 2012-02-23 Elesta Relays Gmbh Sensorkopfhalter
DE102018103869B3 (de) * 2018-02-21 2019-05-09 Physik Instrumente (Pi) Gmbh & Co. Kg Maßelement für eine optische Messvorrichtung
CN111678888A (zh) * 2020-06-09 2020-09-18 南方科技大学 一种液体折射率检测传感器、装置及方法
US20240044675A1 (en) * 2022-08-08 2024-02-08 Hengstler Gmbh Optoelectronic device comprising light processing device with a through-opening
EP4603801B1 (de) * 2024-02-14 2025-12-31 Sick Ag Optischer encoder

Family Cites Families (27)

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Publication number Priority date Publication date Assignee Title
NL185178C (nl) 1974-03-15 1990-02-01 Nat Res Dev Inrichting voor het foto-elektrisch meten van een relatieve verschuiving tussen twee elementen.
GB1504691A (en) 1974-03-15 1978-03-22 Nat Res Dev Measurement apparatus
DD157744A1 (de) † 1981-03-31 1982-12-01 Lutz Wolf Silizium-fotodetektor
DE3625327C1 (de) 1986-07-26 1988-02-18 Heidenhain Gmbh Dr Johannes Lichtelektrische Positionsmesseinrichtung
DE8717558U1 (de) 1987-02-21 1989-02-23 Dr. Johannes Heidenhain Gmbh, 8225 Traunreut Lichtelektrische Positionsmeßeinrichtung
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
DE3836703A1 (de) 1988-10-28 1990-05-03 Heidenhain Gmbh Dr Johannes Winkelmesseinrichtung
JPH0656304B2 (ja) 1989-09-05 1994-07-27 株式会社ミツトヨ 光電型エンコーダ
ATE92622T1 (de) 1989-12-23 1993-08-15 Heidenhain Gmbh Dr Johannes Einrichtung mit wenigstens einem wellenleiterkoppler.
DE4011718A1 (de) 1990-04-11 1991-10-17 Heidenhain Gmbh Dr Johannes Integriert-optische sensoreinrichtung
US5204524A (en) * 1991-03-22 1993-04-20 Mitutoyo Corporation Two-dimensional optical encoder with three gratings in each dimension
US5155355A (en) 1991-04-25 1992-10-13 Mitutoyo Corporation Photoelectric encoder having a grating substrate with integral light emitting elements
DE59102268D1 (de) 1991-05-24 1994-08-25 Heidenhain Gmbh Dr Johannes Vorrichtung zum Ein- und/oder Auskoppeln von Lichtstrahlen mit einem integriert-optischen Baustein.
EP0843159A3 (en) * 1991-11-06 1999-06-02 Renishaw Transducer Systems Limited Opto-electronic scale-reading apparatus
SE470116B (sv) * 1992-04-03 1993-11-08 Asea Brown Boveri Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets
DE4302313C2 (de) 1993-01-28 1996-12-05 Heidenhain Gmbh Dr Johannes Mehrkoordinaten-Meßeinrichtung
JPH06268254A (ja) 1993-03-15 1994-09-22 Toshiba Corp 半導体装置
JP3082516B2 (ja) * 1993-05-31 2000-08-28 キヤノン株式会社 光学式変位センサおよび該光学式変位センサを用いた駆動システム
JP3244205B2 (ja) 1993-06-17 2002-01-07 信越半導体株式会社 半導体装置
JPH08178702A (ja) 1994-12-27 1996-07-12 Canon Inc 光学式センサ
US5852322A (en) 1995-05-19 1998-12-22 Dr. Johannes Heidenhain Gmbh Radiation-sensitive detector element and method for producing it
DE19524725C1 (de) 1995-07-07 1996-07-11 Zeiss Carl Jena Gmbh Fotoelektrischer Kodierer zum Abtasten optischer Strukturen
JP3631551B2 (ja) 1996-01-23 2005-03-23 株式会社ミツトヨ 光学式エンコーダ
DE19720300B4 (de) 1996-06-03 2006-05-04 CiS Institut für Mikrosensorik gGmbH Elektronisches Hybrid-Bauelement und Verfahren zu seiner Herstellung
GB2315594B (en) * 1996-07-22 2000-08-16 Cambridge Display Tech Ltd Sensing device
DE19859670A1 (de) 1998-12-23 2000-06-29 Heidenhain Gmbh Dr Johannes Abtastkopf und Verfahren zu dessen Herstellung
DE19859669A1 (de) 1998-12-23 2000-06-29 Heidenhain Gmbh Dr Johannes Integrierter optoelektronischer Sensor und Verfahren zu dessen Herstellung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004042670B4 (de) 2003-09-02 2018-07-12 CiS Forschungsinstitut für Mikrosensorik GmbH Mikrooptisches Strahler- und Empfängersystem
WO2008053184A1 (en) 2006-10-28 2008-05-08 Renishaw Plc Opto electronic read head
DE102010002902A1 (de) * 2010-03-16 2011-09-22 Dr. Johannes Heidenhain Gmbh Abtasteinheit für eine optische Positionsmesseinrichtung
EP3150970A1 (de) * 2015-09-29 2017-04-05 Dr. Johannes Heidenhain GmbH Optisches schichtsystem
US10094961B2 (en) 2015-09-29 2018-10-09 Dr. Johannes Heidenhain Gmbh Optical layer system

Also Published As

Publication number Publication date
EP1788361A2 (de) 2007-05-23
US6621104B1 (en) 2003-09-16
EP1175600B1 (de) 2007-02-28
DE50014119D1 (de) 2007-04-12
EP1175600B2 (de) 2010-10-27
EP1788361A3 (de) 2007-05-30
ATE355506T1 (de) 2006-03-15
JP4688297B2 (ja) 2011-05-25
EP1175600A1 (de) 2002-01-30
WO2000063654A1 (de) 2000-10-26
JP2002542616A (ja) 2002-12-10

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Legal Events

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8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee