WO2000017666A1 - Magnetoresistives sensorelement, insbesondere winkelsensorelement - Google Patents
Magnetoresistives sensorelement, insbesondere winkelsensorelement Download PDFInfo
- Publication number
- WO2000017666A1 WO2000017666A1 PCT/DE1999/001013 DE9901013W WO0017666A1 WO 2000017666 A1 WO2000017666 A1 WO 2000017666A1 DE 9901013 W DE9901013 W DE 9901013W WO 0017666 A1 WO0017666 A1 WO 0017666A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- sensor element
- element according
- magnetization
- magnetic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
- G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Definitions
- Magnetoresistive sensor element in particular angle sensor element
- the present invention relates to a magnetoresistive sensor element, in particular an angle sensor element, according to the preamble of patent claim 1.
- Sensors in particular angle sensors, which work on the basis of the magnetoresistive effect are known.
- the electrical resistance of sensor elements is measured as a function of the direction of an external magnetic field.
- GMR sensor elements giant magneto resistance
- self-stabilizing magnetic layers van den Berg et al., GMR angle detector with an artificial antiferromagnetic subsystem , Journal of Magnetism and Magnetic Materials 165 (1997) 524-528.
- a first thin, so-called reference layer is generated by the fact that between two oppositely magnetized layers (for example made of Co) an antiferromagnetic coupling layer (for example made of Cu or Ru) is introduced.
- the magnetic stability of the reference layer is increased by an order of magnitude compared to individual Co layers due to this multilayer structure.
- the direction of magnetization of the reference layer does not (ideally) depend on the direction of the external (to be measured) magnetic field.
- the reference layer is covered with a thin non-magnetic layer, on which in turn a thin soft magnetic layer, the so-called detection layer, is formed.
- Angular errors are essentially caused by two factors.
- the magnetic reference is influenced by the magnetic field to be measured and does not remain rigid in the excellent direction
- the magnetization direction follows the Detection layer not free of errors or delays in the direction of the external magnetic field.
- the object of the invention is therefore to create a magnetoresistive sensor element or sensor with which occurring angle errors can be avoided or at least reduced.
- a sensor element is now created in which the direction of magnetization of the detection layer can follow an external magnetic field, in particular even with an external magnetic field that is small in terms of magnitude, much more easily and more accurately or more delay-free than was possible with conventional sensor elements.
- the " improvement in the accuracy of the sensor element that can be achieved in this way can be achieved with little technical effort (for example structuring of the detection layer by known chemical methods).
- the segments are at least partially circular or elliptical. With such a shape, a particularly delay-free or precise alignment of the direction of magnetization of the detection layer with respect to an external magnetic field is obtained.
- the sensor element expediently has an elongated or elongated shape. This design ensures that the reference magnetization is largely independent of the external magnetic field.
- the elongated shape or the anisotropy of the sensor element (its length should be significantly greater than its width) has a particularly favorable effect on the self-stabilization of a reference layer designed as an artificial antiferromagnet.
- the first layer is expediently a hard magnetic layer.
- Such layers are inexpensive to implement and ensure good magnetic stability of the reference layer.
- the third layer is expediently designed as a soft magnetic layer.
- Such layers can be implemented in a variety of different forms in a simple and inexpensive manner.
- Ni-Fe alloys may be mentioned as a preferred example of soft magnetic materials.
- the first layer consists of a layer arrangement with a self-stabilizing coupling (artificial antiferromagnet).
- Such layers have a particularly high magnetic stability, furthermore an elongated shape of the Sensor element on the magnetic stability of such layer arrangements particularly favorable.
- the first layer has an artificially pinned or biased magnetization.
- magnetization can be achieved, for example, by means of a current-carrying conductor which is in operative connection with the first layer in order to stabilize its direction of magnetization.
- the first and third layers are made using GMR materials.
- Figure 1 is a schematic plan view of a preferred embodiment of the sensor element according to the invention.
- Figure 2 shows the sensor element of Figure 1 schematically in a side view
- the sensor element shown in FIG. 1 has a first, magnetic or magnetized layer 1, which represents a reference layer.
- the internal structure of this first layer is not shown in detail. It is preferred that the first layer 1 is designed as an artificial antiferromagnet, ie between two thin magnetic layers with (in the basic state) antiparallel oriented magnetizations as antiferromagnetic coupling layer acting thin metallic intermediate layer.
- an artificial antiferromagnet ie between two thin magnetic layers with (in the basic state) antiparallel oriented magnetizations as antiferromagnetic coupling layer acting thin metallic intermediate layer.
- the magnetic framework necessary for the creation of a self-stabilizing artificial antiferromagnet reference is made to the article by van den Berg et. al. directed.
- the direction of the reference magnetization created by the first layer 1 is shown in FIG. 1 and FIG. 2 by an arrow 5.
- the direction of an external magnetic field to be measured is shown by the dashed arrow 6.
- a thin, non-magnetic second layer 2 is applied to the first layer 1, on which in turn a magnetic third layer 3 (detection layer) is formed.
- the layer system with the layers 1, 2, 3 is advantageously produced in the schematically illustrated elongated (or also a meandered) form, the third layer 3 also initially being unstructured, i.e. is formed according to layers 1, 2.
- the third layer 3 is then removed, for example by means of chemical processes (e.g.
- Etching process in the form of the illustrated ellipses 3a or in the form of circles selectively structured. Structuring of this type proves to be very favorable for the sensor function, since this means that the direction of magnetization can also follow relatively small external magnetic fields with relative amounts.
- the (the direction 6 of the outer Magnetization corresponding to the magnetic field is represented by arrows 7 for the respective ellipses 3a.
- the sensor elements according to the invention can be connected, for example, to bridge circuits in a manner known per se. With sensors that use such bridge circuits, angle measurements are possible in a particularly simple and reliable manner.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU41323/99A AU758991B2 (en) | 1998-09-22 | 1999-04-03 | Magnetoresistive sensor element, especially angular sensor element |
EP99924763A EP1046046A1 (de) | 1998-09-22 | 1999-04-03 | Magnetoresistives sensorelement, insbesondere winkelsensorelement |
JP2000571276A JP2002525609A (ja) | 1998-09-22 | 1999-04-03 | 磁気抵抗効果型センサ素子、例えば、角度センサ素子 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1998143349 DE19843349A1 (de) | 1998-09-22 | 1998-09-22 | Magnetoresistives Sensorelement, insbesondere Winkelsensorelement |
DE19843349.2 | 1998-09-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000017666A1 true WO2000017666A1 (de) | 2000-03-30 |
Family
ID=7881778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1999/001013 WO2000017666A1 (de) | 1998-09-22 | 1999-04-03 | Magnetoresistives sensorelement, insbesondere winkelsensorelement |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1046046A1 (de) |
JP (1) | JP2002525609A (de) |
AU (1) | AU758991B2 (de) |
DE (1) | DE19843349A1 (de) |
WO (1) | WO2000017666A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013102165A1 (de) | 2012-07-18 | 2014-02-06 | Tdk Corporation | Magnetsensorsystem |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10255327A1 (de) | 2002-11-27 | 2004-06-24 | Robert Bosch Gmbh | Magnetoresistives Sensorelement und Verfahren zur Reduktion des Winkelfehlers eines magnetoresistiven Sensorelements |
US10096767B2 (en) | 2013-03-09 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Elongated magnetoresistive tunnel junction structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0622781A2 (de) * | 1993-04-30 | 1994-11-02 | International Business Machines Corporation | Granulierter mehrschichtiger magnetoresistiver Fühler |
EP0660127A2 (de) * | 1993-12-23 | 1995-06-28 | International Business Machines Corporation | Mehrschicht magnetoresistiver Fühler |
EP0730162A2 (de) * | 1995-03-02 | 1996-09-04 | Siemens Aktiengesellschaft | Sensoreinrichtung mit einer Brückenschaltung von magnetoresistiven Sensorelementen |
EP0863406A2 (de) * | 1997-03-07 | 1998-09-09 | Alps Electric Co., Ltd. | Magnetoresistiver Sensor |
-
1998
- 1998-09-22 DE DE1998143349 patent/DE19843349A1/de not_active Withdrawn
-
1999
- 1999-04-03 JP JP2000571276A patent/JP2002525609A/ja active Pending
- 1999-04-03 EP EP99924763A patent/EP1046046A1/de not_active Withdrawn
- 1999-04-03 AU AU41323/99A patent/AU758991B2/en not_active Ceased
- 1999-04-03 WO PCT/DE1999/001013 patent/WO2000017666A1/de not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0622781A2 (de) * | 1993-04-30 | 1994-11-02 | International Business Machines Corporation | Granulierter mehrschichtiger magnetoresistiver Fühler |
EP0660127A2 (de) * | 1993-12-23 | 1995-06-28 | International Business Machines Corporation | Mehrschicht magnetoresistiver Fühler |
EP0730162A2 (de) * | 1995-03-02 | 1996-09-04 | Siemens Aktiengesellschaft | Sensoreinrichtung mit einer Brückenschaltung von magnetoresistiven Sensorelementen |
EP0863406A2 (de) * | 1997-03-07 | 1998-09-09 | Alps Electric Co., Ltd. | Magnetoresistiver Sensor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013102165A1 (de) | 2012-07-18 | 2014-02-06 | Tdk Corporation | Magnetsensorsystem |
DE102013102165B4 (de) * | 2012-07-18 | 2014-11-20 | Tdk Corporation | Magnetsensorsystem |
US9175942B2 (en) | 2012-07-18 | 2015-11-03 | Tdk Corporation | Magnetic sensor system |
Also Published As
Publication number | Publication date |
---|---|
DE19843349A1 (de) | 2000-03-23 |
AU4132399A (en) | 2000-04-10 |
EP1046046A1 (de) | 2000-10-25 |
JP2002525609A (ja) | 2002-08-13 |
AU758991B2 (en) | 2003-04-03 |
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