WO2000016400A8 - Applications of protective ceramics - Google Patents

Applications of protective ceramics

Info

Publication number
WO2000016400A8
WO2000016400A8 PCT/CN1999/000147 CN9900147W WO0016400A8 WO 2000016400 A8 WO2000016400 A8 WO 2000016400A8 CN 9900147 W CN9900147 W CN 9900147W WO 0016400 A8 WO0016400 A8 WO 0016400A8
Authority
WO
WIPO (PCT)
Prior art keywords
protective
ceramics
applications
pilling
ratio
Prior art date
Application number
PCT/CN1999/000147
Other languages
French (fr)
Chinese (zh)
Other versions
WO2000016400A1 (en
Inventor
Guobiao Zhang
Original Assignee
Guobiao Zhang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guobiao Zhang filed Critical Guobiao Zhang
Priority to AU57258/99A priority Critical patent/AU5725899A/en
Publication of WO2000016400A1 publication Critical patent/WO2000016400A1/en
Publication of WO2000016400A8 publication Critical patent/WO2000016400A8/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

This invention relates to applications of protective ceramics material to integrated circuits. It is beneficial for an FPGA, PROM, DRAM and superconductive circuit to use a protective ceramic which can densely cover metal surface and is free of defects. As a result, a high yield can be ensured. The Pilling-Bedwirth ratio is a good indicator of the protective nature of an insulating material. It is desirable to limit the Pilling-Bedworth ratio larger than 1 and preferably smaller than 2. Multiple layers of ceramics can be used to further reduce the defect density and improve yield.
PCT/CN1999/000147 1998-09-16 1999-09-15 Applications of protective ceramics WO2000016400A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU57258/99A AU5725899A (en) 1998-09-16 1999-09-15 Applications of protective ceramics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN98119257A CN1087871C (en) 1998-09-16 1998-09-16 Application of protective ceramic material
CN98119257.2 1998-09-16

Publications (2)

Publication Number Publication Date
WO2000016400A1 WO2000016400A1 (en) 2000-03-23
WO2000016400A8 true WO2000016400A8 (en) 2000-07-27

Family

ID=5226312

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN1999/000147 WO2000016400A1 (en) 1998-09-16 1999-09-15 Applications of protective ceramics

Country Status (3)

Country Link
CN (1) CN1087871C (en)
AU (1) AU5725899A (en)
WO (1) WO2000016400A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100818058B1 (en) * 2002-06-28 2008-03-31 매그나칩 반도체 유한회사 Method for forming mim capacitor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070384A (en) * 1990-04-12 1991-12-03 Actel Corporation Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
US5521423A (en) * 1993-04-19 1996-05-28 Kawasaki Steel Corporation Dielectric structure for anti-fuse programming element
US5439840A (en) * 1993-08-02 1995-08-08 Motorola, Inc. Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
US5463244A (en) * 1994-05-26 1995-10-31 Symetrix Corporation Antifuse programmable element using ferroelectric material
JPH09246094A (en) * 1996-03-11 1997-09-19 Murata Mfg Co Ltd Trimmable layered ceramic capacitor
US5838530A (en) * 1996-07-22 1998-11-17 Zhang; Guobiao Applications of protective ceramics

Also Published As

Publication number Publication date
CN1087871C (en) 2002-07-17
WO2000016400A1 (en) 2000-03-23
AU5725899A (en) 2000-04-03
CN1211083A (en) 1999-03-17

Similar Documents

Publication Publication Date Title
EP0100232B1 (en) Substrate for semiconductor apparatus
AUPQ653700A0 (en) Surface treated electrically conductive metal element and method of forming same
WO2002041378A3 (en) Semiconductor structure and process for fabricating same
EP2270845A3 (en) Integrated circuits and methods for their fabrication
WO2002054495A3 (en) Metal oxynitrides on monocrystalline substrates
CA2166014A1 (en) High Power Superconductive Circuits and Method of Construction Thereof
EP2495732A3 (en) Conductive fine particles, method for plating fine particles, and substrate structure
EP1167559A4 (en) Composite material and use thereof
WO2003001594A3 (en) High-voltage module and method for producing the same
MY118958A (en) Method of manufacturing electronic components
WO2002023616A8 (en) Integrating metal with ultra low-k dielectrics
KR920018848A (en) Semiconductor device manufacturing method
EP1130628A4 (en) Semiconductor device and method for manufacturing the same
WO2002054484A3 (en) Metal ion diffusion barrier layers
NO20021054D0 (en) Process for making a porcelain, porcelain and ceramic insulator consisting of porcelain
WO2000016400A8 (en) Applications of protective ceramics
JPS5638401A (en) Iron-copper composite powder and its manufacture
JPS52147800A (en) Semiconductor ceramic capacitor composite and its method of manufacturing
JPS6446990A (en) Josephson element and manufacture thereof
JPH01167291A (en) Metallized composition for ceramic
Flavell et al. Preparation of Bi4 (Sr, Ca) 6Cu4O16+ x surfaces for photoemission studies by in situ oxygen annealing
EP1298111A4 (en) Porous silicon nitride article and method for production thereof
FI902074A0 (en) Dielectric ceramic alloy for use in the manufacture of electronic devices
JPS5530815A (en) Semiconductor containing vessel
CA2432174A1 (en) High efficiency quarter-wave transformer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AL AM AT AT AU AZ BA BB BG BR BY CA CH CU CZ CZ DE DE DK DK EE EE ES FI FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SK SL TJ TM TR TT UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: C1

Designated state(s): AE AL AM AT AT AU AZ BA BB BG BR BY CA CH CU CZ CZ DE DE DK DK EE EE ES FI FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SK SL TJ TM TR TT UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: C1

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

WR Later publication of a revised version of an international search report
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct app. not ent. europ. phase