WO2000003421A8 - Amelioration de la detection de la fin d'operations de fabrication de substrats - Google Patents

Amelioration de la detection de la fin d'operations de fabrication de substrats

Info

Publication number
WO2000003421A8
WO2000003421A8 PCT/US1999/015648 US9915648W WO0003421A8 WO 2000003421 A8 WO2000003421 A8 WO 2000003421A8 US 9915648 W US9915648 W US 9915648W WO 0003421 A8 WO0003421 A8 WO 0003421A8
Authority
WO
WIPO (PCT)
Prior art keywords
fabrication processes
endpoint detection
substrate fabrication
improved endpoint
substrate
Prior art date
Application number
PCT/US1999/015648
Other languages
English (en)
Other versions
WO2000003421A3 (fr
WO2000003421A2 (fr
WO2000003421A9 (fr
Inventor
Zhifeng Sui
Paul E Luscher
Nils Johansson
Michael D Welch
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP99933879A priority Critical patent/EP1125314A1/fr
Priority to JP2000559582A priority patent/JP2003521807A/ja
Publication of WO2000003421A2 publication Critical patent/WO2000003421A2/fr
Publication of WO2000003421A9 publication Critical patent/WO2000003421A9/fr
Publication of WO2000003421A3 publication Critical patent/WO2000003421A3/fr
Publication of WO2000003421A8 publication Critical patent/WO2000003421A8/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

On traite un substrat (20) dans une chambre de traitement (42) et on détecte une première condition de traitement apparaissant avant, pendant ou après le traitement du substrat. On détermine la précision ou la validité de cette première condition de traitement au moyen de la détection d'une deuxième condition de traitement.
PCT/US1999/015648 1998-07-10 1999-07-09 Amelioration de la detection de la fin d'operations de fabrication de substrats WO2000003421A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP99933879A EP1125314A1 (fr) 1998-07-10 1999-07-09 Amelioration de la detection de la fin d'operations de fabrication de substrats
JP2000559582A JP2003521807A (ja) 1998-07-10 1999-07-09 基板製作工程に関する改良された終点検出

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9242698P 1998-07-10 1998-07-10
US60/092,426 1998-07-10
US35005299A 1999-07-08 1999-07-08
US09/350,052 1999-07-09

Publications (4)

Publication Number Publication Date
WO2000003421A2 WO2000003421A2 (fr) 2000-01-20
WO2000003421A9 WO2000003421A9 (fr) 2000-07-20
WO2000003421A3 WO2000003421A3 (fr) 2001-05-31
WO2000003421A8 true WO2000003421A8 (fr) 2001-09-20

Family

ID=26785660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/015648 WO2000003421A2 (fr) 1998-07-10 1999-07-09 Amelioration de la detection de la fin d'operations de fabrication de substrats

Country Status (3)

Country Link
JP (1) JP2003521807A (fr)
KR (1) KR100695582B1 (fr)
WO (1) WO2000003421A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW529085B (en) * 2000-09-22 2003-04-21 Alps Electric Co Ltd Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system
JP4537196B2 (ja) * 2002-04-23 2010-09-01 東京エレクトロン株式会社 簡略化したシステム構成のための方法および装置
US6825050B2 (en) 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
JP3959318B2 (ja) 2002-08-22 2007-08-15 東京エレクトロン株式会社 プラズマリーク監視方法，プラズマ処理装置，プラズマ処理方法，およびコンピュータプログラム
US20060275931A1 (en) * 2005-05-20 2006-12-07 Asm Japan K.K. Technology of detecting abnormal operation of plasma process
US7638441B2 (en) 2007-09-11 2009-12-29 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
KR101307247B1 (ko) * 2012-09-26 2013-09-11 가톨릭대학교 산학협력단 보상구조물을 이용한 실리콘웨이퍼 에칭 방법 및 이를 이용한 에너지 하베스터 제조 방법
US9978621B1 (en) 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
CN115537784A (zh) * 2022-10-19 2022-12-30 北京北方华创真空技术有限公司 一种用于化学气相沉积设备的控制方法和系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160402A (en) * 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes

Also Published As

Publication number Publication date
JP2003521807A (ja) 2003-07-15
KR100695582B1 (ko) 2007-03-14
WO2000003421A3 (fr) 2001-05-31
WO2000003421A2 (fr) 2000-01-20
KR20010083104A (ko) 2001-08-31
WO2000003421A9 (fr) 2000-07-20

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