WO1999050911A2 - Electronic devices comprising thin-film transistors - Google Patents
Electronic devices comprising thin-film transistors Download PDFInfo
- Publication number
- WO1999050911A2 WO1999050911A2 PCT/IB1999/000252 IB9900252W WO9950911A2 WO 1999050911 A2 WO1999050911 A2 WO 1999050911A2 IB 9900252 W IB9900252 W IB 9900252W WO 9950911 A2 WO9950911 A2 WO 9950911A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gate
- transistors
- tfts
- circuit
- field
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 20
- 239000011159 matrix material Substances 0.000 claims abstract description 41
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005070 sampling Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012925 reference material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019997010979A KR100590737B1 (en) | 1998-03-28 | 1999-02-15 | Electronic devices comprising thin-film transistors |
EP99901842A EP0985232A2 (en) | 1998-03-28 | 1999-02-15 | Electronic devices comprising thin-film transistors |
JP54907699A JP2002500829A (en) | 1998-03-28 | 1999-02-15 | Electronic device having a thin film transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9806609.5A GB9806609D0 (en) | 1998-03-28 | 1998-03-28 | Electronic devices comprising thin-film transistors |
GB9806609.5 | 1998-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999050911A2 true WO1999050911A2 (en) | 1999-10-07 |
WO1999050911A3 WO1999050911A3 (en) | 1999-11-18 |
Family
ID=10829395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB1999/000252 WO1999050911A2 (en) | 1998-03-28 | 1999-02-15 | Electronic devices comprising thin-film transistors |
Country Status (6)
Country | Link |
---|---|
US (1) | US6046479A (en) |
EP (1) | EP0985232A2 (en) |
JP (1) | JP2002500829A (en) |
KR (1) | KR100590737B1 (en) |
GB (1) | GB9806609D0 (en) |
WO (1) | WO1999050911A2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002057339A (en) * | 2000-08-10 | 2002-02-22 | Sony Corp | Thin film semiconductor device |
JP2002076352A (en) * | 2000-08-31 | 2002-03-15 | Semiconductor Energy Lab Co Ltd | Display device and its manufacturing method |
US7365393B2 (en) | 1999-02-23 | 2008-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
EP1770790A3 (en) * | 2005-09-27 | 2008-05-21 | Samsung SDI Co., Ltd. | Transparent thin film transistor (TFT) and its method of manufacture |
US7994510B2 (en) | 2008-05-30 | 2011-08-09 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of manufacturing the same and flat panel display device having the same |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100306801B1 (en) | 1998-06-25 | 2002-05-13 | 박종섭 | Thin film transistor and its manufacturing method |
JP4536187B2 (en) * | 1998-11-17 | 2010-09-01 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
GB9825314D0 (en) * | 1998-11-20 | 1999-01-13 | Koninkl Philips Electronics Nv | Active matrix liquid crystal display devices |
US6281552B1 (en) | 1999-03-23 | 2001-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having ldd regions |
JP2001007342A (en) * | 1999-04-20 | 2001-01-12 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
TW463382B (en) * | 2000-05-19 | 2001-11-11 | Hannstar Display Corp | Manufacturing method of thin film transistor |
EP1350272A1 (en) * | 2000-12-21 | 2003-10-08 | Koninklijke Philips Electronics N.V. | Thin film transistors |
TW471182B (en) * | 2001-01-20 | 2002-01-01 | Unipac Optoelectronics Corp | Thin film transistor having light guide material |
KR100437475B1 (en) * | 2001-04-13 | 2004-06-23 | 삼성에스디아이 주식회사 | Method for fabricating display device used in flat display device |
JP5038560B2 (en) * | 2001-08-01 | 2012-10-03 | ゲットナー・ファンデーション・エルエルシー | FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE USING THE TRANSISTOR AND ITS MANUFACTURING METHOD |
JP3961310B2 (en) * | 2002-02-21 | 2007-08-22 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP4675680B2 (en) * | 2005-05-30 | 2011-04-27 | シャープ株式会社 | Method for manufacturing thin film transistor substrate |
US7719008B2 (en) * | 2006-02-03 | 2010-05-18 | Samsung Electronics Co., | Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate |
KR101261609B1 (en) * | 2006-07-06 | 2013-05-06 | 삼성디스플레이 주식회사 | Thin film transistor, thin film transistor array panel and method for manufacturing the same |
TWI361492B (en) * | 2008-07-25 | 2012-04-01 | Au Optronics Corp | Thin film transistor substrate, electric apparatus, and method for fabricating the same |
TWI451573B (en) * | 2011-03-17 | 2014-09-01 | E Ink Holdings Inc | Thin film transistor structure and display device using the same |
US9634029B2 (en) | 2011-03-17 | 2017-04-25 | E Ink Holdings Inc. | Thin film transistor substrate and display device having same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0629003A1 (en) * | 1993-05-28 | 1994-12-14 | Philips Electronics Uk Limited | Electronic devices with thin-film circuit elements forming a sampling circuit |
US5477073A (en) * | 1993-08-20 | 1995-12-19 | Casio Computer Co., Ltd. | Thin film semiconductor device including a driver and a matrix circuit |
US5563432A (en) * | 1993-04-23 | 1996-10-08 | Kabushiki Kaisha Toshiba | Thin-film transistor and display device using the same |
JPH0945931A (en) * | 1994-09-14 | 1997-02-14 | Semiconductor Energy Lab Co Ltd | Semiconductor circuit and its manufacture |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2245741A (en) * | 1990-06-27 | 1992-01-08 | Philips Electronic Associated | Active matrix liquid crystal devices |
US5403762A (en) * | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
JP3587537B2 (en) * | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JPH07111333A (en) * | 1993-08-20 | 1995-04-25 | Casio Comput Co Ltd | Thin film transistor, manufacture thereof, and input or output device equipped therewith |
JPH07131030A (en) * | 1993-11-05 | 1995-05-19 | Sony Corp | Thin film semiconductor device for display and fabrication thereof |
JP3599827B2 (en) * | 1994-05-20 | 2004-12-08 | 三菱電機株式会社 | Active matrix liquid crystal display manufacturing method |
JP3312083B2 (en) * | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | Display device |
JP3253808B2 (en) * | 1994-07-07 | 2002-02-04 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
US5977559A (en) * | 1995-09-29 | 1999-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor having a catalyst element in its active regions |
-
1998
- 1998-03-28 GB GBGB9806609.5A patent/GB9806609D0/en not_active Ceased
-
1999
- 1999-02-15 JP JP54907699A patent/JP2002500829A/en active Pending
- 1999-02-15 KR KR1019997010979A patent/KR100590737B1/en not_active IP Right Cessation
- 1999-02-15 WO PCT/IB1999/000252 patent/WO1999050911A2/en active IP Right Grant
- 1999-02-15 EP EP99901842A patent/EP0985232A2/en not_active Withdrawn
- 1999-03-23 US US09/274,389 patent/US6046479A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5563432A (en) * | 1993-04-23 | 1996-10-08 | Kabushiki Kaisha Toshiba | Thin-film transistor and display device using the same |
EP0629003A1 (en) * | 1993-05-28 | 1994-12-14 | Philips Electronics Uk Limited | Electronic devices with thin-film circuit elements forming a sampling circuit |
US5477073A (en) * | 1993-08-20 | 1995-12-19 | Casio Computer Co., Ltd. | Thin film semiconductor device including a driver and a matrix circuit |
JPH0945931A (en) * | 1994-09-14 | 1997-02-14 | Semiconductor Energy Lab Co Ltd | Semiconductor circuit and its manufacture |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN & JP 09 045 931 A (SEMICONDUCTOR ENERGY LAB CO LTD) 14 February 1997 * |
PROCEEDINGS OF THE 1996 INTERNATIONAL ACTIVE MATRIX WORKSHOP J.R. AYRES AND S.D. BROTHERTON: 'WS 3/1: Influence of Drain Field on Poly-Si TFT Behaviour' September 1996, BIRMINGHAM, ENGLAND, page 35, XP002919925 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7365393B2 (en) | 1999-02-23 | 2008-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US7442991B2 (en) | 1999-02-23 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Display including casing and display unit |
US7745829B2 (en) | 1999-02-23 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and fabrication method thereof |
US8030659B2 (en) | 1999-02-23 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US9910334B2 (en) | 1999-02-23 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
JP2002057339A (en) * | 2000-08-10 | 2002-02-22 | Sony Corp | Thin film semiconductor device |
JP2002076352A (en) * | 2000-08-31 | 2002-03-15 | Semiconductor Energy Lab Co Ltd | Display device and its manufacturing method |
EP1770790A3 (en) * | 2005-09-27 | 2008-05-21 | Samsung SDI Co., Ltd. | Transparent thin film transistor (TFT) and its method of manufacture |
US7994510B2 (en) | 2008-05-30 | 2011-08-09 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of manufacturing the same and flat panel display device having the same |
Also Published As
Publication number | Publication date |
---|---|
KR100590737B1 (en) | 2006-06-19 |
GB9806609D0 (en) | 1998-05-27 |
JP2002500829A (en) | 2002-01-08 |
EP0985232A2 (en) | 2000-03-15 |
WO1999050911A3 (en) | 1999-11-18 |
US6046479A (en) | 2000-04-04 |
KR20010013006A (en) | 2001-02-26 |
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