WO1999036941A3 - Trench isolation for micromechanical devices - Google Patents

Trench isolation for micromechanical devices Download PDF

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Publication number
WO1999036941A3
WO1999036941A3 PCT/US1999/000784 US9900784W WO9936941A3 WO 1999036941 A3 WO1999036941 A3 WO 1999036941A3 US 9900784 W US9900784 W US 9900784W WO 9936941 A3 WO9936941 A3 WO 9936941A3
Authority
WO
WIPO (PCT)
Prior art keywords
beams
silicon
metal
micromechanical devices
trench isolation
Prior art date
Application number
PCT/US1999/000784
Other languages
French (fr)
Other versions
WO1999036941A2 (en
Inventor
Scott G Adams
Kevin A Shaw
Russell Y Webb
Bryan W Reed
Noel C Macdonald
Timothy J Davis
Original Assignee
Cornell Res Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell Res Foundation Inc filed Critical Cornell Res Foundation Inc
Priority to EP99903085A priority Critical patent/EP1062684B1/en
Priority to JP2000540560A priority patent/JP2002510139A/en
Priority to DE69942486T priority patent/DE69942486D1/en
Publication of WO1999036941A2 publication Critical patent/WO1999036941A2/en
Publication of WO1999036941A3 publication Critical patent/WO1999036941A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00142—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Element Separation (AREA)
  • Pressure Sensors (AREA)

Abstract

An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments (254, 256) within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams (276, 278) provides interconnects (244, 246) and also allows contact to the silicon beams. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.
PCT/US1999/000784 1998-01-15 1999-01-14 Trench isolation for micromechanical devices WO1999036941A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP99903085A EP1062684B1 (en) 1998-01-15 1999-01-14 Trench isolation for micromechanical devices
JP2000540560A JP2002510139A (en) 1998-01-15 1999-01-14 Trench isolation for microfabricated devices
DE69942486T DE69942486D1 (en) 1998-01-15 1999-01-14 TRACK INSULATION FOR MICROMECHANICAL COMPONENTS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7139098P 1998-01-15 1998-01-15
US60/071,390 1998-01-15

Publications (2)

Publication Number Publication Date
WO1999036941A2 WO1999036941A2 (en) 1999-07-22
WO1999036941A3 true WO1999036941A3 (en) 2000-02-10

Family

ID=22100999

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/000784 WO1999036941A2 (en) 1998-01-15 1999-01-14 Trench isolation for micromechanical devices

Country Status (5)

Country Link
US (2) US6239473B1 (en)
EP (2) EP1062684B1 (en)
JP (1) JP2002510139A (en)
DE (1) DE69942486D1 (en)
WO (1) WO1999036941A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8873174B2 (en) 2010-11-15 2014-10-28 DigitalOptics Corporation MEMS Mounting flexure contacts

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Also Published As

Publication number Publication date
EP1062684A2 (en) 2000-12-27
WO1999036941A2 (en) 1999-07-22
US6239473B1 (en) 2001-05-29
JP2002510139A (en) 2002-04-02
EP1062684A4 (en) 2006-07-26
DE69942486D1 (en) 2010-07-22
EP2221852A1 (en) 2010-08-25
EP1062684B1 (en) 2010-06-09
US6342430B1 (en) 2002-01-29
EP2221852B1 (en) 2012-05-09

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