CN111847373B - Supporting hole structure of infrared MEMS and forming method - Google Patents
Supporting hole structure of infrared MEMS and forming method Download PDFInfo
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- CN111847373B CN111847373B CN202010756191.XA CN202010756191A CN111847373B CN 111847373 B CN111847373 B CN 111847373B CN 202010756191 A CN202010756191 A CN 202010756191A CN 111847373 B CN111847373 B CN 111847373B
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 102100022717 Atypical chemokine receptor 1 Human genes 0.000 claims abstract description 25
- 101000678879 Homo sapiens Atypical chemokine receptor 1 Proteins 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000006698 induction Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 143
- 239000010408 film Substances 0.000 description 31
- 230000008569 process Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 238000011160 research Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- -1 LIGA Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000011089 mechanical engineering Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00698—Electrical characteristics, e.g. by doping materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a supporting hole structure of an infrared MEMS and a forming method thereof, wherein the supporting hole structure is in a groove shape on a semiconductor substrate, and a plurality of film layers are covered on the side wall and the bottom in the groove; the structure comprises: a semiconductor substrate; a metal reflective layer formed over the semiconductor substrate; a dielectric layer; a release layer and a first release protection layer for release protection; the photosensitive layer is formed on the first release protection layer; a metal electrode layer formed on the photosensitive layer; the supporting hole metal film layer is formed in the supporting hole and is positioned above the metal electrode layer; the DARC layer is formed on the metal electrode layer and the supporting hole metal film layer; a second release protection layer formed over the DARC layer. According to the invention, under the condition that the structure of the induction layer is not changed, a layer of metal aluminum film layer of the support hole is added to the support hole, and the open circuit at the bottom of the support hole is prevented by utilizing the fluidity of metal aluminum.
Description
Technical Field
The invention relates to the field of semiconductor device manufacturing, in particular to a supporting hole structure of an infrared MEMS, which can effectively support hollowed-out MEMS in a bridge structure of an MEMS product and can effectively reduce the problem of metal open circuit at the bottom of the supporting hole structure.
The invention also relates to a method for forming the support hole structure of the infrared MEMS.
Background
Microelectromechanical systems (MEMS, micro-Electro-Mechanical System), also called microelectromechanical systems, microsystems, micromechanical etc., refer to high-tech devices with dimensions of a few millimeters or even less, whose internal structure is typically on the order of micrometers or even nanometers, are independent intelligent systems. Mainly comprises three parts of a sensor, an actuator and micro energy. The micro-electromechanical system relates to various subjects and engineering technologies such as physics, semiconductors, optics, electronic engineering, chemistry, material engineering, mechanical engineering, medicine, information engineering, bioengineering and the like, and opens up wide application in the fields of intelligent systems, consumer electronics, wearable devices, intelligent households, synthetic biology of system biotechnology, microfluidic technology and the like. Common products include MEMS accelerometers, MEMS microphones, micro-motors, micro-pumps, micro-vibrators, MEMS pressure sensors, MEMS gyroscopes, MEMS humidity sensors, and the like, as well as their integrated products.
MEMS has the following basic characteristics: miniaturization, intelligence, multifunction, high integration and suitability for mass production. The goal of MEMS technology is to explore elements and systems with new principles, new functions through miniaturization, integration of the system. MEMS technology is a typical multidisciplinary crossover frontier research area focusing on ultra-precise machining, and relates to almost all fields of nature and engineering science, such as electronics, mechanical technology, physics, chemistry, biomedical, materials science, energy science, etc. The research content can be generally summarized into the following three basic aspects: 1. theoretical basis: at the current scale that MEMS can reach, the basic physical laws of the macroscopic world still work, but many physical phenomena are very different from those of the macroscopic world due to the influence (Scaling Effects) caused by the size reduction, so many original theoretical bases such as the size effect of force, the surface effect of microstructure, and the micro friction mechanism change, and thus, there is a need to make intensive researches on micro dynamics, micro fluid mechanics, micro thermo mechanics, micro friction science, micro optics, and micro structure. Although this research is important, it is difficult and often requires basic research by multidisciplinary students. 2. Basic research of technology: the method mainly comprises the technical basic researches of micro-mechanical design, micro-mechanical materials, micro-machining, micro-assembly and encapsulation, integration technology, micro-measurement and the like. 3. Application study of micro-machinery in various disciplines.
Microelectromechanical systems have evolved based on microelectronic technology (semiconductor fabrication technology) and incorporate high-tech electromechanical devices fabricated by techniques such as photolithography, etching, thin film, LIGA, silicon micromachining, non-silicon micromachining, and precision machining.
Amorphous silicon is an allotropic form of silicon that can be deposited as thin films on a variety of substrates, providing some unique functionality for a variety of electronic applications. Amorphous silicon is used in mass-produced microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), solar cells, microcrystalline silicon and micro amorphous silicon, even for roll-on process technology on a variety of substrates. Conventional mes devices rely comparatively on those typical materials used in silicon-based layer circuit fabrication, such as single crystal silicon, polysilicon, silicon oxide and silicon nitride. Due to the mechanical nature of MEMS devices, material properties like young's modulus, coefficient of thermal expansion, and yield strength are very important to MEMS design. There are often unsupported (or suspended) elements in MEMS structures, so tight control of stress and stress gradients in the thin film is required, otherwise the unsupported elements will fracture or curl, rendering the structure useless. Fig. 1 is a schematic diagram of a conventional infrared MEMS bridge pillar structure, which includes a supporting hole structure, and bridge warpage caused by stress release of the bridge structure, thereby affecting subsequent package testing.
The prior art comprises the following steps, as shown in fig. 4-5:
forming a metal reflecting layer on a semiconductor substrate, and depositing and patterning a sacrificial layer after patterning;
step two, integrally depositing a protective layer and a photosensitive layer;
step three, patterning the photosensitive layer;
fourthly, patterning the film layer in the supporting hole area outside the bridge column;
fifth, integrally depositing to form a metal electrode film;
step six, integrally depositing and forming DARC films (dielectric anti-reflection coatings, dielectric Anti Reflective Coating, DARC) and patterning;
step seven, etching the metal electrode film layer;
step eight, depositing a protective layer film and patterning the bridge column structure area;
and step nine, patterning the contact PAD area.
After the supporting hole is etched, the side face of the metal at the bottom of the supporting hole is corroded in the wet cleaning process, so that the electrode breaking phenomenon is easy to occur.
Disclosure of Invention
The invention aims to solve the technical problem of providing a supporting hole structure of an infrared MEMS and a forming method thereof, which mainly improve the structural design of the supporting hole and avoid the disconnection at the bottom of the supporting hole.
In order to solve the problems, the invention provides a supporting hole structure of an infrared MEMS, wherein the supporting hole structure is in a groove shape on a semiconductor substrate, and a plurality of film layers cover the side wall and the bottom in the groove; the supporting hole structure sequentially comprises the following components from bottom to top:
a semiconductor substrate;
a metal reflective layer formed over the semiconductor substrate;
a dielectric layer;
a release layer and a first release protection layer for release protection; the release layer and the first release protection layer are formed on the dielectric layer;
a photosensitive layer formed on the first release protection layer;
a metal electrode layer formed on the photosensitive layer;
supporting the hole metal film layer; the supporting hole metal film layer is formed in the supporting hole and is positioned above the metal electrode layer;
the DARC layer is formed on the metal electrode layer and the supporting hole metal film layer;
and a second release protection layer formed over the DARC layer.
The bridge beam structure is characterized in that the bridge beam structure is provided with a bridge beam structure, and the bridge beam structure is provided with a bridge beam structure, wherein the bridge beam structure comprises a bridge beam structure, a bridge beam structure and a light-sensitive layer, wherein the bridge beam structure comprises a substrate, a metal reflecting layer, a dielectric layer, a release layer, a first release protection layer, a photosensitive layer, a metal electrode, a DARC layer and a second release protection layer;
the first release protection layer is deposited on the release layer and is positioned on the dielectric layer together;
the photosensitive layer is deposited on the first release protection layer;
the DARC layer is deposited on the metal electrode;
the second release protection layer is deposited over the DARC layer.
The semiconductor substrate is a silicon substrate and is a circuit substrate for reading infrared sensing signals.
The metal reflecting layer is a metal film with high reflectivity, and the material is gold, silver, aluminum or copper or a mixture of several materials.
The dielectric layer, the first release protection layer and the DARC layer are all electric insulation layers, and are made of one or more of silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide; or one or more of silicon nitride and silicon oxynitride with non-stoichiometric ratio; the silicon carbide may replace silicon oxide.
The photosensitive layer is made of infrared absorption amorphous silicon material.
The metal electrode layer is made of a metal film with a Ti/TiN structure.
The further improvement is that the supporting hole metal film layer is made of aluminum.
In order to solve the above problems, the present invention provides a method for forming a support hole structure of an infrared MEMS, the method comprising:
forming a metal reflecting layer on a semiconductor substrate, and depositing and patterning a sacrificial layer after patterning;
step two, integrally depositing a first release protection layer and a photosensitive layer;
step three, patterning the photosensitive layer;
fourthly, patterning the film layer in the supporting hole area outside the bridge column;
fifth, integrally depositing to form a metal electrode layer;
step six, integrally depositing a supporting hole metal film layer;
step seven, etching and patterning the metal film layer of the supporting hole;
eighth, DARC membrane electrode and etching and patterning;
step nine, etching the metal electrode layer;
step ten, depositing a second release protection layer and etching and patterning;
and step eleven, patterning the contact PAD area.
The semiconductor substrate is a circuit substrate for reading infrared sensing signals.
The semiconductor substrate is a silicon substrate.
The further improvement is that the first release protection layer is a silicon oxide layer, the metal layer is a Ti/TiN layer, and the second release protection layer is a composite layer formed by a mixed layer of silicon oxynitride and silicon oxide, a silicon oxide layer, a silicon oxynitride layer and a silicon oxide layer.
According to the supporting hole structure and the forming method of the infrared MEMS, after the supporting hole is etched, aiming at the electrode open circuit phenomenon caused by side corrosion of metal at the bottom of the supporting hole in the wet cleaning process, under the condition that the structure of an induction layer is not changed, the supporting hole is modified, a supporting hole metal aluminum film layer is added, and the open circuit at the bottom of the supporting hole is prevented by utilizing the fluidity of metal aluminum, so that defects are prevented.
Drawings
Fig. 1 is a schematic diagram of a conventional infrared MENS structure, including support holes and bridge column structures.
FIG. 2 is a schematic illustration of an infrared MEMS bridge column structure provided by the present invention, comprising support holes with metal film layers.
Fig. 3 is an enlarged view of the support hole shown in fig. 2.
Fig. 4-5 are schematic views of process steps for fabricating an infrared MEMS structure of the prior art.
Fig. 6 is a schematic diagram of steps in a process for fabricating an infrared MEMS structure according to the present invention (after the process shown in fig. 4, that is, the process flow shown in fig. 4 is the same in the process according to the present invention as in the prior art process), and fig. 5 and 6 are different portions of the prior art process from the process according to the present invention).
Description of the reference numerals
1 is a substrate, 2 is a photosensitive layer, 3 is a metal electrode layer, 4 is a first release protection layer, 5 is a second release protection layer, 6 is a support hole metal layer, 7 is a metal reflective layer, 8 is a release layer, and 9 is a DARC layer.
Detailed Description
The supporting hole structure of the infrared MEMS bridge column is mainly improved aiming at the supporting hole film layer of the MEMS bridge column, and the phenomenon of electrode open circuit caused by side corrosion of supporting hole bottom metal exists in the wet cleaning process after etching of the supporting hole in the prior art.
As shown in FIG. 1, the cross-sectional view of an infrared MEMS structure comprises a supporting hole structure, a bridge column structure and a film structure outside the bridge column region, wherein the supporting holes are positioned at two ends, and the MEMS structure is arranged between the two supporting holes.
Fig. 2 is a cross-sectional view of an infrared MEMS bridge column structure provided by the present invention, where the MEMS structure is formed of various other film layers in a region outside the bridge column structure, and the layers outside the bridge column structure include a substrate, a metal reflective layer, a dielectric layer, a release layer, a first release protection layer, a photosensitive layer, a metal electrode, a DARC layer, and a second release protection layer.
For the support hole portion, referring to fig. 3, the partial enlarged view of the support hole is shown, the whole is in a groove shape, and the film layer is formed by laminating a plurality of different film layers, and the structure in fig. 3 comprises:
a semiconductor substrate 1, which is a circuit substrate for reading infrared sensing signals, typically a silicon substrate;
a metal reflective layer 7 formed over the semiconductor substrate; the metal reflecting layer is a metal film with high reflectivity, and the material is gold, silver, aluminum or copper or a mixture of several materials.
A dielectric layer (not shown);
a release layer 8 and a first release protection layer 4 for release protection; the release layer 8 and the first release protection layer 4 are formed on the dielectric layer;
a photosensitive layer 2 made of an infrared absorbing amorphous silicon material, wherein the photosensitive layer 2 is formed on the first release protection layer 4;
the metal electrode layer 3 is formed on the photosensitive layer 2, and the material of the metal electrode layer 3 is a metal film with a Ti/TiN structure;
a support hole metal film layer 6; the supporting hole metal film layer 6 is formed in the supporting hole and is positioned on the metal electrode layer, and the metal film layer 6 is made of aluminum.
A DARC layer 9, wherein the DARC layer 9 is formed on the metal electrode layer 3 and the support hole metal film layer 6;
a second release protection layer 5 formed over the DARC layer.
The dielectric layer, the first release protection layer and the DARC layer are all electric insulation layers, and are made of one or more of silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide; or one or more of silicon nitride and silicon oxynitride with non-stoichiometric ratio; the silicon carbide may replace silicon oxide.
In order to solve the above problems, the present invention provides a method for forming a support hole structure of an infrared MEMS, which includes, in combination with fig. 4 and 6:
forming a metal reflecting layer on a semiconductor substrate such as a silicon substrate, and depositing and patterning a sacrificial layer after patterning;
step two, integrally depositing a first release protection layer, such as a silicon oxide layer, and then depositing a photosensitive layer;
step three, patterning the photosensitive layer;
fourthly, patterning the film layer in the supporting hole area outside the bridge column;
fifth, integrally depositing a metal electrode layer, wherein the metal electrode layer is a Ti/TiN layer;
step six, integrally depositing a supporting hole metal film layer;
step seven, etching and patterning the metal film layer of the supporting hole;
eighth, DARC membrane electrode and etching and patterning;
step nine, etching the metal electrode layer;
step ten, depositing a second release protection layer and etching and patterning; the second release protection layer is a composite layer formed by a mixed layer of silicon oxynitride and silicon oxide, a silicon oxide layer, a silicon oxynitride layer and a silicon oxide layer;
and step eleven, patterning the contact PAD area.
The bridge column (comprising the supporting hole) structure of the infrared MEMS is formed through the process.
The above are only preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. An infrared MEMS's supporting hole structure, its characterized in that: the supporting hole structure is in a groove shape on the semiconductor substrate, and a plurality of film layers cover the side wall and the bottom in the groove; the supporting hole structure sequentially comprises the following components from bottom to top:
a semiconductor substrate;
a metal reflective layer formed over the semiconductor substrate;
a dielectric layer;
a release layer and a first release protection layer for release protection; the release layer and the first release protection layer are formed on the dielectric layer;
a photosensitive layer formed on the first release protection layer;
a metal electrode layer formed on the photosensitive layer;
supporting the hole metal film layer; the supporting hole metal film layer is formed in the supporting hole and is positioned above the metal electrode layer;
the DARC layer is formed on the metal electrode layer and the supporting hole metal film layer;
and a second release protection layer formed over the DARC layer.
2. The infrared MEMS support aperture structure of claim 1, wherein: the MEMS structure is formed by other various film layers in the region outside the supporting hole structure, and the layer outside the supporting hole structure comprises a substrate, a metal reflecting layer, a dielectric layer, a release layer, a first release protection layer, a photosensitive layer, a metal electrode, a DARC layer and a second release protection layer;
the first release protection layer is deposited on the release layer and is positioned on the dielectric layer together;
the photosensitive layer is deposited on the first release protection layer;
the DARC layer is deposited on the metal electrode;
the second release protection layer is deposited over the DARC layer.
3. The infrared MEMS support aperture structure of claim 1, wherein: the semiconductor substrate is a silicon substrate and is a circuit substrate for reading infrared sensing signals.
4. The infrared MEMS support aperture structure of claim 1, wherein: the metal reflecting layer is a metal film with high reflectivity, and the material is gold, silver, aluminum or copper or a mixture of several materials.
5. The infrared MEMS support aperture structure of claim 1, wherein: the dielectric layer, the first release protection layer and the DARC layer are all electric insulation layers, and are made of one or more of silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide; or one or more of silicon nitride and silicon oxynitride with non-stoichiometric ratio; the silicon carbide may replace silicon oxide.
6. The infrared MEMS support aperture structure of claim 1, wherein: the photosensitive layer is made of infrared absorption amorphous silicon material.
7. The infrared MEMS support aperture structure of claim 1, wherein: the metal electrode layer is made of a metal film with a Ti/TiN structure.
8. The infrared MEMS support aperture structure of claim 1, wherein: the supporting hole metal film layer is made of aluminum.
9. The method for forming the support hole structure of the infrared MEMS is characterized by comprising the following steps of: the method comprises the following steps:
forming a metal reflecting layer on a semiconductor substrate, and depositing and patterning a sacrificial layer after patterning;
step two, integrally depositing a first release protection layer and a photosensitive layer;
step three, patterning the photosensitive layer;
fourthly, patterning the film layer in the supporting hole area outside the bridge column;
fifth, integrally depositing to form a metal electrode layer;
step six, integrally depositing a supporting hole metal film layer;
step seven, etching and patterning the metal film layer of the supporting hole;
eighth, DARC membrane electrode and etching and patterning;
step nine, etching the metal electrode layer;
step ten, depositing a second release protection layer and etching and patterning;
and step eleven, patterning the contact PAD area.
10. The method for forming a support hole structure for an infrared MEMS according to claim 9, wherein: the semiconductor substrate is a circuit substrate for reading infrared sensing signals.
11. The method of forming a support hole structure for an infrared MEMS according to claim 10, wherein: the semiconductor substrate is a silicon substrate.
12. The method for forming a support hole structure for an infrared MEMS according to claim 9, wherein: the first release protection layer is a silicon oxide layer, the metal layer is a Ti/TiN layer, and the second release protection layer is a composite layer formed by a mixed layer of silicon oxynitride and silicon oxide, a silicon oxide layer, a silicon oxynitride layer and a silicon oxide layer.
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