CN111847373A - Support hole structure of infrared MEMS and forming method - Google Patents
Support hole structure of infrared MEMS and forming method Download PDFInfo
- Publication number
- CN111847373A CN111847373A CN202010756191.XA CN202010756191A CN111847373A CN 111847373 A CN111847373 A CN 111847373A CN 202010756191 A CN202010756191 A CN 202010756191A CN 111847373 A CN111847373 A CN 111847373A
- Authority
- CN
- China
- Prior art keywords
- layer
- support hole
- release
- metal
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 213
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 102100022717 Atypical chemokine receptor 1 Human genes 0.000 claims abstract description 25
- 101000678879 Homo sapiens Atypical chemokine receptor 1 Proteins 0.000 claims abstract description 25
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000006698 induction Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 13
- 230000006872 improvement Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- 238000011160 research Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- -1 LIGA Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000011089 mechanical engineering Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00698—Electrical characteristics, e.g. by doping materials
Abstract
The invention discloses a supporting hole structure of an infrared MEMS and a forming method thereof, wherein the supporting hole structure is in a groove shape on a semiconductor substrate, and a plurality of film layers cover the side wall and the bottom in the groove; the structure includes: a semiconductor substrate; a metal reflective layer formed over the semiconductor substrate; a dielectric layer; a release layer, and a first release protection layer for release protection; the photosensitive layer is formed on the first release protective layer; a metal electrode layer formed on the photosensitive layer; the support hole metal film layer is formed in the support hole and is positioned on the metal electrode layer; the DARC layer is formed on the metal electrode layer and the support hole metal film layer; a second release protection layer formed over the DARC layer. The invention adds a layer of support hole metal aluminum film layer to the support hole under the condition of not changing the structure of the induction layer, and prevents the open circuit at the bottom of the support hole by utilizing the fluidity of the metal aluminum.
Description
Technical Field
The invention relates to the field of semiconductor device manufacturing, in particular to a support hole structure capable of effectively supporting an MEMS hollowed infrared MEMS in an MEMS product bridge structure, and the problem of metal open circuit at the bottom of the support hole structure can be effectively solved.
The invention also relates to a forming method of the supporting hole structure of the infrared MEMS.
Background
Micro-Electro-Mechanical systems (MEMS), also called Micro-electromechanical systems, microsystems, micromachines, etc., refer to high-tech devices with dimensions of several millimeters or even smaller, whose internal structure is generally in the micrometer or even nanometer level, and which are independent intelligent systems. The device mainly comprises a sensor, an actuator and a micro-energy source. The micro electro mechanical system relates to various subjects and engineering technologies such as physics, semiconductor, optics, electronic engineering, chemistry, material engineering, mechanical engineering, medicine, information engineering, biological engineering and the like, and develops wide application in the fields of synthetic biology, microfluidic technology and the like of intelligent systems, consumer electronics, wearable equipment, smart homes, system biotechnology and the like. Common products include MEMS accelerometers, MEMS microphones, micro-motors, micro-pumps, micro-vibrators, MEMS pressure sensors, MEMS gyroscopes, MEMS humidity sensors, and the like, as well as integrated products thereof.
MEMS have several basic features: miniaturization, intellectualization, multifunction, high integration and suitability for mass production. The goal of MEMS technology is to explore elements and systems with new principles and new functions through the miniaturization and integration of systems. MEMS technology is a typical multidisciplinary, cross-sectional, frontline research area that focuses on ultra-precision machining, involving almost all areas of nature and engineering sciences, such as electronics, mechanics, physics, chemistry, biomedicine, materials science, energy science, and the like. The research content can be generally summarized into the following three basic aspects: 1. theoretical basis: under the scale which can be achieved by the current MEMS, the basic physical laws of the macroscopic world still play a role, but due to the influence (Scaling Effects) caused by size reduction, a plurality of physical phenomena are greatly different from the macroscopic world, so that a plurality of original theoretical bases can be changed, such as force size effect, micro-structural surface effect, micro-friction mechanism and the like, and therefore deep research on micro-dynamics, micro-fluid mechanics, micro-thermodynamics, micro-tribology, micro-optics and micro-mechanics is necessary. Although the research on the aspect is regarded as important, the difficulty is high, and basic research is often required for multi-disciplinary students. 2. Research on technical basis: the method mainly comprises the technical basic researches of micro-mechanical design, micro-mechanical materials, micro-machining, micro-assembly and packaging, integration technology, micro-measurement and the like. 3. The application of micromachines in various disciplines is studied.
The micro electro mechanical system is developed on the basis of microelectronic technology (semiconductor manufacturing technology), and integrates high-tech electronic mechanical devices manufactured by technologies such as photoetching, corrosion, thin film, LIGA, silicon micromachining, non-silicon micromachining, precision machining and the like.
Amorphous silicon is an allotrope form of silicon that can be deposited in thin film form on a variety of substrates to provide certain unique functions for a variety of electronic applications. Amorphous silicon is useful in mass-produced microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), solar cells, microcrystalline and micro amorphous silicon, and even for roll-on-roll processing techniques on a variety of substrates. Conventional mems devices rely more on typical materials used in silicon-based circuit fabrication, such as single crystal silicon, polysilicon, silicon oxide and silicon nitride. Due to the mechanical nature of MEMS devices, material properties like young's modulus, coefficient of thermal expansion and yield strength are very important for MEMS design. There are often unsupported (or overhanging) elements in the MEMS structure, and therefore tight control is required for the stress and stress gradient in the membrane, otherwise the unsupported elements will crack or curl, rendering the structure ineffective. Fig. 1 is a schematic diagram of a conventional infrared MEMS bridge column structure, which includes a support hole structure, and a bridge warpage caused by stress release of the bridge structure affects subsequent packaging tests.
The existing process comprises the following steps as shown in figures 4-5:
forming a metal reflecting layer on a semiconductor substrate, and depositing and patterning a sacrificial layer after patterning;
step two, a protective layer and a photosensitive layer are integrally deposited;
step three, patterning the photosensitive layer;
fourthly, imaging the membrane layer of the support hole area outside the bridge column;
step five, integrally depositing to form a metal electrode film;
sixthly, integrally depositing and forming a DARC film (Dielectric Anti-reflection coating, DARC) and patterning;
step seven, etching the metal electrode film layer;
depositing a protective layer film, and imaging the bridge column structure area;
and step nine, patterning the contact PAD area.
After the support hole is etched, the side surface of the metal at the bottom of the support hole is easily corroded in the wet cleaning process to cause the electrode open circuit phenomenon.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a supporting hole structure of an infrared MEMS and a forming method thereof, which mainly improve the structural design of the supporting hole and avoid the bottom of the supporting hole from being broken.
In order to solve the problems, the supporting hole structure of the infrared MEMS is in a groove shape on a semiconductor substrate, and a plurality of film layers cover the side wall and the bottom in the groove; support pore structure from supreme including in proper order down:
a semiconductor substrate;
a metal reflective layer formed over the semiconductor substrate;
a dielectric layer;
a release layer, and a first release protection layer for release protection; the release layer and the first release protective layer are formed on the dielectric layer;
a photosensitive layer formed on the first release protection layer;
a metal electrode layer formed on the photosensitive layer;
a support hole metal film layer; the support hole metal film layer is formed in the support hole and is positioned on the metal electrode layer;
the DARC layer is formed on the metal electrode layer and the support hole metal film layer;
a second release protection layer formed over the DARC layer.
The further improvement is that the bridge column structure is provided with an MEMS structure formed by other various film layers in the region outside the bridge column structure, and the layers outside the bridge column structure region comprise a substrate, a metal reflecting layer, a dielectric layer, a release layer, a first release protective layer, a photosensitive sensitive layer, a metal electrode, a DARC layer and a second release protective layer;
the first release protective layer is deposited on the release layer and is positioned on the dielectric layer;
the photosensitive sensitive layer is deposited on the first release protective layer;
the DARC layer is deposited on the metal electrode;
the second release protection layer is deposited over the DARC layer.
In a further improvement, the semiconductor substrate is a silicon substrate and is a circuit substrate for reading infrared sensing signals.
The further improvement is that the metal reflecting layer is a metal film with high reflectivity, and the material is gold, silver, aluminum or copper, or a mixture of several materials.
The further improvement is that the dielectric layer, the first release protection layer and the DARC layer are all electric insulation layers made of one or more of silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide; or one or more of silicon nitride and silicon oxynitride with non-stoichiometric ratio; the silicon carbide may replace silicon oxide.
In a further improvement, the photosensitive layer is an infrared absorbing amorphous silicon material.
The further improvement is that the metal electrode layer is made of a metal film with a Ti/TiN structure.
The further improvement is that the support hole metal film layer is made of aluminum.
In order to solve the above problems, the present invention provides a method for forming a support hole structure of an infrared MEMS, the method comprising:
forming a metal reflecting layer on a semiconductor substrate, and depositing and patterning a sacrificial layer after patterning;
step two, integrally depositing a first release protective layer and a photosensitive layer;
step three, patterning the photosensitive layer;
fourthly, imaging the membrane layer of the support hole area outside the bridge column;
step five, integrally depositing to form a metal electrode layer;
step six, integrally depositing a support hole metal film layer;
seventhly, etching and patterning the support hole metal film layer;
step eight, DARC film layer electrode is etched and patterned;
step nine, etching the metal electrode layer;
step ten, depositing a second release protection layer and etching and patterning;
and step eleven, patterning the contact PAD area.
In a further improvement, the semiconductor substrate is a circuit substrate for reading infrared sensing signals.
In a further improvement, the semiconductor substrate is a silicon substrate.
The further improvement is that the first release protection layer is a silicon oxide layer, the metal layer is a Ti/TiN layer, and the second release protection layer is a composite layer formed by a mixed layer of silicon oxynitride and silicon oxide, a silicon oxide layer, a silicon oxynitride layer and a silicon oxide layer.
According to the support hole structure of the infrared MEMS and the forming method thereof, after the support hole is etched, in the wet cleaning process, aiming at the electrode open circuit phenomenon caused by the side surface corrosion of the metal at the bottom of the support hole, under the condition that the structure of the induction layer is not changed, the support hole is modified, a support hole metal aluminum film layer is added, and the open circuit at the bottom of the support hole is prevented by utilizing the fluidity of metal aluminum, so that the defects are prevented.
Drawings
Fig. 1 is a schematic view of a general infrared MENS structure, including a support hole and a bridge post structure.
FIG. 2 is a schematic view of an infrared MEMS bridge post structure provided by the present invention, including a support hole of a metal film.
Fig. 3 is an enlarged view of the support hole illustrated in fig. 2.
FIGS. 4-5 are schematic diagrams of steps of a fabrication process of an infrared MEMS structure in the prior art.
Fig. 6 is a schematic diagram of steps of a process for fabricating an infrared MEMS structure according to the present invention (following the process shown in fig. 4, i.e., the same process flow shown in fig. 4 exists in the process of the present invention and the prior art process, and fig. 5 and 6 are different portions of the prior art process from the process of the present invention).
Description of the reference numerals
1 is a substrate, 2 is a photosensitive layer, 3 is a metal electrode layer, 4 is a first release protect layer, 5 is a second release protect layer, 6 is a support hole metal layer, 7 is a metal reflective layer, 8 is a release layer, and 9 is a DARC layer.
Detailed Description
The supporting hole structure of the infrared MEMS bridge column is mainly improved aiming at a supporting hole film layer of the MEMS structure bridge column, and due to the fact that in the prior art, after the supporting hole is etched, the phenomenon of electrode open circuit caused by side surface corrosion of metal at the bottom of the supporting hole exists in the wet cleaning process.
As shown in fig. 1, the cross-sectional view of an infrared MEMS structure includes a supporting hole structure, a bridge post structure and a film structure outside the bridge post region, wherein the supporting holes are located at two ends, and the MEMS structure is located between the two supporting holes.
Fig. 2 is a cross-sectional view of an infrared MEMS bridge-column structure provided by the present invention, which further includes an MEMS structure formed by other various film layers in an area outside the bridge-column structure, and the layers outside the bridge-column structure area include a substrate, a metal reflective layer, a dielectric layer, a release layer, a first release protection layer, a photosensitive layer, a metal electrode, a DARC layer, and a second release protection layer.
For the supporting hole part, mainly refer to the enlarged partial view of the supporting hole as shown in fig. 3, the whole supporting hole is in a groove shape and comprises a plurality of different film layers which are overlapped, and the structure in fig. 3 comprises:
the semiconductor device comprises a semiconductor substrate 1, a first substrate, a second substrate and a third substrate, wherein the semiconductor substrate is a circuit substrate for reading infrared sensing signals, and is generally a silicon substrate;
a metal reflective layer 7 formed over the semiconductor substrate; the metal reflecting layer is a high-reflectivity metal film made of gold, silver, aluminum or copper or a mixture of several materials.
A dielectric layer (not shown);
a release layer 8, and a first release protective layer 4 for release protection; the release layer 8 and the first release protection layer 4 are formed on the dielectric layer;
the photosensitive layer 2 is an infrared absorption amorphous silicon material, and the photosensitive layer 2 is formed on the first release protection layer 4;
the metal electrode layer 3 is formed on the photosensitive layer 2, and is made of a metal film with a Ti/TiN structure;
a support hole metal film layer 6; the support hole metal film layer 6 is formed in the support hole and positioned on the metal electrode layer, the metal film layer 6 is made of aluminum, and the invention prevents the open circuit of the bottom of the support hole by utilizing the fluidity of the metal aluminum.
A DARC layer 9, wherein the DARC layer 9 is formed on the metal electrode layer 3 and the support hole metal film layer 6;
a second release protection layer 5 formed over the DARC layer.
The dielectric layer, the first release protection layer and the DARC layer are all electric insulation layers and are made of one or more of silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide; or one or more of silicon nitride and silicon oxynitride with non-stoichiometric ratio; the silicon carbide may replace silicon oxide.
In order to solve the above problems, the present invention provides a method for forming a support hole structure of an infrared MEMS, the method comprising, in combination with fig. 4 and 6:
step one, forming a metal reflecting layer on a semiconductor substrate such as a silicon substrate, and depositing and patterning a sacrificial layer after patterning;
step two, integrally depositing a first release protective layer, such as a silicon oxide layer, and then depositing a photosensitive layer;
step three, patterning the photosensitive layer;
fourthly, imaging the membrane layer of the support hole area outside the bridge column;
step five, integrally depositing to form a metal electrode layer, wherein the metal electrode layer is a Ti/TiN layer;
step six, integrally depositing a support hole metal film layer;
seventhly, etching and patterning the support hole metal film layer;
step eight, DARC film layer electrode is etched and patterned;
step nine, etching the metal electrode layer;
step ten, depositing a second release protection layer and etching and patterning; the second release protection layer is a composite layer formed by a mixed layer of silicon oxynitride and silicon oxide, a silicon oxide layer, a silicon oxynitride layer and a silicon oxide layer;
and step eleven, patterning the contact PAD area.
The structure of the bridge column (comprising the supporting hole) of the infrared MEMS is formed through the process.
The above are merely preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. The utility model provides an infrared MEMS's support pore structure which characterized in that: the supporting hole structure is in a groove shape on the semiconductor substrate, and a plurality of film layers cover the side wall and the bottom in the groove; support pore structure from supreme including in proper order down:
a semiconductor substrate;
a metal reflective layer formed over the semiconductor substrate;
a dielectric layer;
a release layer, and a first release protection layer for release protection; the release layer and the first release protective layer are formed on the dielectric layer;
a photosensitive layer formed on the first release protection layer;
a metal electrode layer formed on the photosensitive layer;
a support hole metal film layer; the support hole metal film layer is formed in the support hole and is positioned on the metal electrode layer;
the DARC layer is formed on the metal electrode layer and the support hole metal film layer;
a second release protection layer formed over the DARC layer.
2. The support hole structure of infrared MEMS of claim 1, wherein: the MEMS structure formed by other various film layers is arranged in the area outside the bridge column structure, and the layers outside the bridge column structure area comprise a substrate, a metal reflecting layer, a dielectric layer, a release layer, a first release protective layer, a photosensitive sensitive layer, a metal electrode, a DARC layer and a second release protective layer;
the first release protective layer is deposited on the release layer and is positioned on the dielectric layer;
the photosensitive sensitive layer is deposited on the first release protective layer;
the DARC layer is deposited on the metal electrode;
the second release protection layer is deposited over the DARC layer.
3. The support hole structure of infrared MEMS of claim 1, wherein: the semiconductor substrate is a silicon substrate and is a circuit substrate for reading infrared sensing signals.
4. The support hole structure of infrared MEMS of claim 1, wherein: the metal reflecting layer is a high-reflectivity metal film made of gold, silver, aluminum or copper or a mixture of several materials.
5. The support hole structure of infrared MEMS of claim 1, wherein: the dielectric layer, the first release protection layer and the DARC layer are all electric insulation layers and are made of one or more of silicon dioxide, silicon nitride, silicon oxynitride and silicon carbide; or one or more of silicon nitride and silicon oxynitride with non-stoichiometric ratio; the silicon carbide may replace silicon oxide.
6. The support hole structure of infrared MEMS of claim 1, wherein: the photosensitive layer is an infrared absorption amorphous silicon material.
7. The support hole structure of infrared MEMS of claim 1, wherein: the metal electrode layer is made of a metal film with a Ti/TiN structure.
8. The support hole structure of infrared MEMS of claim 1, wherein: the support hole metal film layer is made of aluminum.
9. A forming method of a supporting hole structure of an infrared MEMS is characterized in that: the method comprises the following steps:
forming a metal reflecting layer on a semiconductor substrate, and depositing and patterning a sacrificial layer after patterning;
step two, integrally depositing a first release protective layer and a photosensitive layer;
step three, patterning the photosensitive layer;
fourthly, imaging the membrane layer of the support hole area outside the bridge column;
step five, integrally depositing to form a metal electrode layer;
step six, integrally depositing a support hole metal film layer;
seventhly, etching and patterning the support hole metal film layer;
step eight, DARC film layer electrode is etched and patterned;
step nine, etching the metal electrode layer;
step ten, depositing a second release protection layer and etching and patterning;
and step eleven, patterning the contact PAD area.
10. The method of claim 9, wherein: the semiconductor substrate is a circuit substrate for reading infrared sensing signals.
11. The method of claim 10, wherein: the semiconductor substrate is a silicon substrate.
12. The method of claim 9, wherein: the first release protection layer is a silicon oxide layer, the metal layer is a Ti/TiN layer, and the second release protection layer is a mixed layer of silicon oxynitride and silicon oxide, a silicon oxide layer, a silicon oxynitride layer and a composite layer formed by the silicon oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010756191.XA CN111847373B (en) | 2020-07-31 | 2020-07-31 | Supporting hole structure of infrared MEMS and forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010756191.XA CN111847373B (en) | 2020-07-31 | 2020-07-31 | Supporting hole structure of infrared MEMS and forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111847373A true CN111847373A (en) | 2020-10-30 |
| CN111847373B CN111847373B (en) | 2024-01-19 |
Family
ID=72952497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010756191.XA Active CN111847373B (en) | 2020-07-31 | 2020-07-31 | Supporting hole structure of infrared MEMS and forming method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111847373B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6239473B1 (en) * | 1998-01-15 | 2001-05-29 | Kionix, Inc. | Trench isolation for micromechanical devices |
| JP2005033218A (en) * | 1997-12-26 | 2005-02-03 | Toshiba Corp | Manufacturing method of semiconductor device |
| US20070170540A1 (en) * | 2006-01-18 | 2007-07-26 | Chung Won Suk | Silicon-rich silicon nitrides as etch stops in MEMS manufature |
| KR20130046470A (en) * | 2011-10-28 | 2013-05-08 | 앰코 테크놀로지 코리아 주식회사 | Mems device for pressure sensor |
| CN104916588A (en) * | 2014-03-11 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN105185803A (en) * | 2015-08-31 | 2015-12-23 | 上海集成电路研发中心有限公司 | Backside illuminated hybrid imaging detector pixel structure and preparation method thereof |
| US10214415B1 (en) * | 2018-03-02 | 2019-02-26 | National Technology & Engineering Solutions Of Sandia, Llc | Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture |
-
2020
- 2020-07-31 CN CN202010756191.XA patent/CN111847373B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005033218A (en) * | 1997-12-26 | 2005-02-03 | Toshiba Corp | Manufacturing method of semiconductor device |
| US6239473B1 (en) * | 1998-01-15 | 2001-05-29 | Kionix, Inc. | Trench isolation for micromechanical devices |
| US20070170540A1 (en) * | 2006-01-18 | 2007-07-26 | Chung Won Suk | Silicon-rich silicon nitrides as etch stops in MEMS manufature |
| KR20130046470A (en) * | 2011-10-28 | 2013-05-08 | 앰코 테크놀로지 코리아 주식회사 | Mems device for pressure sensor |
| CN104916588A (en) * | 2014-03-11 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN105185803A (en) * | 2015-08-31 | 2015-12-23 | 上海集成电路研发中心有限公司 | Backside illuminated hybrid imaging detector pixel structure and preparation method thereof |
| US10214415B1 (en) * | 2018-03-02 | 2019-02-26 | National Technology & Engineering Solutions Of Sandia, Llc | Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture |
Non-Patent Citations (2)
| Title |
|---|
| 梁京, 黄榕旭, 郑国祥, 林健, 庞海舟, 宗祥福: "亚微米IC器件中接触孔的填充和铝金属化工艺的技术", 半导体学报, no. 06, pages 96 - 101 * |
| 肖立新;段来强;柴俊一;王芸;陈志坚;曲波;龚旗煌;: "利用钛保护层在ITO电极上直接制备大面积的超薄氧化铝膜(英文)", 物理化学学报, no. 03, pages 249 - 253 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111847373B (en) | 2024-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Elwenspoek et al. | Mechanical microsensors | |
| CN112033526B (en) | Vibration sensor and method for manufacturing the same | |
| JP2006189433A (en) | Capacitive accelerometer based on micromachined comb | |
| US9906869B2 (en) | Hinged MEMS diaphragm, and method of manufacture thereof | |
| IE20110548A1 (en) | A method for fabricating a sensor | |
| Fedder | MEMS fabrication | |
| Fang et al. | CMOS MEMS: A key technology towards the “More than Moore” era | |
| WO2014106361A1 (en) | Variable-area capacitive transverse acceleration sensor and fabrication method | |
| JP2002509808A (en) | Integrated large area microstructures and micromechanical devices | |
| André et al. | Out-of-plane MEMS-based mechanical airflow sensor co-integrated in SOI CMOS technology | |
| CN111017862B (en) | MEMS bridge column structure and forming method | |
| Shaby et al. | Enhancing the performance of mems piezoresistive pressure sensor using germanium nanowire | |
| US9573802B2 (en) | Method and apparatus for building three-dimensional MEMS elements | |
| CN111847372A (en) | Infrared MEMS bridge column structure and process method | |
| US9217755B2 (en) | Method and apparatus for building three-dimensional MEMS elements | |
| US20110115035A1 (en) | General strength and sensitivity enhancement method for micromachined device | |
| CN111847373A (en) | Support hole structure of infrared MEMS and forming method | |
| CN112047294B (en) | Infrared MEMS bridge column structure and process method | |
| Mirza | Wafer-level packaging technology for MEMS | |
| Liu et al. | Elimination of initial stress-induced curvature in a micromachined bi-material composite-layered cantilever | |
| CA2377189A1 (en) | Micro-electromechanical devices and methods of manufacture | |
| US20050035419A1 (en) | Micro-structure gap control technology and structure formed therefrom | |
| Niimi et al. | Polymer micromachining based on Cu On Polyimide substrate and its application to flexible MEMS sensor | |
| Sanz-Velasco et al. | Sensors and actuators based on SOI materials | |
| Reuter et al. | In-process gap reduction of capacitive transducers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |