WO1999028964A1 - Procede de production d'un dispositif electronique et analyseur de corps etrangers a cet effet - Google Patents

Procede de production d'un dispositif electronique et analyseur de corps etrangers a cet effet Download PDF

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Publication number
WO1999028964A1
WO1999028964A1 PCT/JP1998/005439 JP9805439W WO9928964A1 WO 1999028964 A1 WO1999028964 A1 WO 1999028964A1 JP 9805439 W JP9805439 W JP 9805439W WO 9928964 A1 WO9928964 A1 WO 9928964A1
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WIPO (PCT)
Prior art keywords
foreign matter
electronic device
manufacturing
foreign
analyzing
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Application number
PCT/JP1998/005439
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English (en)
Japanese (ja)
Inventor
Hidefumi Ibe
Kenji Watanabe
Akira Shimase
Masataka Shiba
Tsutomu Sakamoto
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Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO1999028964A1 publication Critical patent/WO1999028964A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device in a production line required for early start-up of the yield of semiconductor devices such as a memory, an ASIC or other LSI, a magnetic disk device, a liquid crystal, etc.
  • semiconductor devices such as a memory, an ASIC or other LSI, a magnetic disk device, a liquid crystal, etc.
  • the process of a semiconductor device can be divided into several hundred steps if it is subdivided in units of equipment, and foreign matter 6 generated during the manufacturing process is usually the same as that of a film 8 formed in a certain process, as shown in FIG.
  • the film 7 that adheres to the upper surface and is formed in the next process is formed on the foreign material 6.
  • foreign substances are often present in a state of being sandwiched between several films.
  • Defective semiconductor devices are usually subjected to quality inspection at the stage where they have a single function, such as after the completion of a wiring process. In memory devices, devices that detect bad bits are often used for this purpose.
  • foreign matter analysis is performed offline to determine the cause, and countermeasures are taken.However, analyzing a large number of foreign matters and identifying the cause based on the results often takes a very long time. This is a necessary task. In any case, the process range where foreign matter is generated is limited to some extent Yes, but it is extremely difficult to quickly identify equipment and take effective measures.
  • the foreign matter generator cannot be specified.
  • it is necessary to further cope with the film formation process In some cases, it is necessary to determine by analyzing the film before the second and third steps. If the film element structures before the generation of foreign matter are arranged in the order of, for example, FGH, it is necessary to extract and determine the steps in that order from a database on processes. Once the foreign matter generation process has been identified in this way, the next step is to trace the history of the wafer and use the equipment used in the relevant process (it is often necessary to use multiple equipment in the same process, so it is necessary to identify which equipment There is. The above analysis also requires a long time.
  • An object of the present invention is to provide a method of manufacturing a high-yield electronic device and a foreign-matter analyzing apparatus for the same, which can identify a cause and a generator of foreign matter on a semiconductor device during manufacture within one day. Disclosure of the invention
  • the following are the basic components in order to be able to specify the cause of generation of foreign matter on a semiconductor device and the device in a short time.
  • the initial motion analyzer includes a device for exposing a cross section of a foreign substance of a device and a device for specifying a constituent element and a structure of a film adjacent to the foreign substance cross section and the foreign substance.
  • FIG. 1 is a diagram showing the general concept of the present invention
  • FIG. 3 is a diagram showing an example of a cross section of a device including foreign matter.
  • FIG. 3 is a diagram showing an example of a current state of a foreign matter separating procedure of a semiconductor device.
  • FIG. 4 is a diagram showing a cause of foreign matter generation in a semiconductor device.
  • FIG. 5 is a diagram showing an example of a configuration of an initial analyzer required for short-time identification of the device.
  • FIG. 5 is a diagram showing a top view of one embodiment of an initial analyzer according to the present invention.
  • FIG. 6 is a diagram showing a side view of one embodiment of the initial analysis apparatus according to the present invention.
  • FIG. 1 is a diagram showing the general concept of the present invention
  • FIG. FIG. 3 is a diagram showing an example of a cross section of a device including foreign matter.
  • FIG. 3 is a diagram showing an example of a current state of a foreign matter separating procedure of a semiconductor
  • FIG. 7 is a view showing a side view of one embodiment of the initial analysis apparatus according to the present invention.
  • FIG. 8 is a diagram showing the overall appearance of an embodiment of the initial motion analyzer according to the present invention
  • FIG. 9 is a diagram showing one of the positional relationships between the AES and the FIB sample according to the present invention.
  • FIG. 10 is a diagram showing one of the positional relationships between the AES and the FIB sample according to the present invention
  • FIG. 11 is a diagram related to the present invention.
  • Fig. 1 shows one of the positional relationships between the samples excavated by AES and FIB.
  • Fig. 12 shows the relationship between the incident angle of ions and the sputter efficiency.
  • FIG. 13 The figure is a diagram showing one of the positional relationships between AES and FIB according to the present invention
  • FIG. 14 is a diagram showing one of the positional relationships between AES and FIB according to the present invention.
  • Fig. 15 shows the method of returning foreign matter to the focus of FIB and AES when the stage is rotated.
  • Fig. 16 shows the integration of AES and FIB.
  • FIG. 17 is a diagram showing the positional relationship of each part in the apparatus from the top and the side.
  • FIG. 17 is a diagram showing the arrangement of shirts for preventing AES contamination by FIB.
  • the figure shows the support structure of the equipment that assists accurate alignment when FIB and AES are used in a single container.Fig.
  • FIG. 19 shows the case where FIB and AES are used in a single container.
  • FIG. 20 is a diagram showing an outline of a vacuum container for simplifying loading and unloading
  • FIG. 20 is a diagram showing an embodiment of the initial motion analyzer according to the present invention.
  • Fig. 21 shows an example when LI MS-TOF is used.
  • Fig. 21 shows an example of a computer screen for registering a film formation structure in the coordinates of foreign particles.
  • Fig. 22 Is different
  • Fig. 23 shows an example of a computer screen that assists in analyzing a film formation structure in object coordinates.
  • Fig. 23 shows a computer screen that assists in analyzing a film formation structure in foreign object coordinates.
  • FIG. 24 shows an example of a computer screen that uses the foreign matter generation process / apparatus for specific support.
  • a wafer is assumed as a semiconductor device for simplicity.
  • the present invention can be similarly applied to magnetic disks other than wafers and thin film transistors (FT).
  • FT thin film transistors
  • the system configuration is as follows.
  • the first-movement analysis station 1 is located adjacent to the production line to save time during wafer transfer and to prevent foreign substances from adhering unnecessarily during wafer transfer.
  • the initial motion analyzer can measure the structure and element distribution of the device cross section including foreign matter.
  • the system includes software that analyzes or supports analysis of the film formation structure at arbitrary coordinates of the device.
  • this system can be applied to a prototyping line as well, and it is possible to eliminate defects caused by foreign matter and foreign substances at an early stage.
  • the process is set by the analysis station 1 linked to the optical particle inspection device 2 several times during several hundreds of detailed processes.
  • the foreign substance inspection device 2 obtains in advance the size and coordinates of the foreign substance, cluster information (characteristics of the arrangement of the foreign substances), and the like, and then performs analysis. This information is Of course, it is necessary to locate the object, but it is a source of information for selecting foreign substances to be analyzed.
  • the cross-sectional image alone cannot identify the process, equipment, and causative substance of the foreign substance, perform elemental analysis of the foreign substance and / or elemental analysis of the adjacent film, and refer to the database on the film formation process and equipment information. Identify the process, equipment, and causative substance of the foreign matter.
  • the wafer size is currently 20 cm to 30 cm in diameter, and the sample stage is desirably 30 cm in diameter or more. With this size, the magnetic disk is less than 10 cm in diameter and can be analyzed as is.
  • liquid crystal displays have a diagonal length of 12 or 13 inches, so a sample stage of about 30 to 35 cm can be used. As the size is expected to increase further in the future, the size of the stage must be correspondingly increased.
  • the procedure for analyzing foreign matter according to the present invention will be described with reference to the cross-sectional structural view of the semiconductor device shown in FIG. While confirming the cross section with SEM, the foreign material cross section 6 and the surrounding film structure are exposed by FIB.
  • the spatial resolution AES is used as the elemental analyzer because of the limitations.
  • the elemental analysis on the line 9 including the foreign matter 6 and the upper and lower films 7 and 8 is performed by AES, and the constituent elements of the foreign matter 6 and the components of the upper and lower films 7 and 8 are measured. In this way, the material, thickness, etc. of the films 7 and 8 above and below the foreign matter 6 are known. I understand.
  • the equipment used in the relevant process can be specified from the history record of the wafer, and the operating conditions of the equipment can be found. Since the AES line analysis takes time, three points analysis of the foreign material 6 and one point in the cross section of the upper and lower films 7 and 8 may achieve the purpose in some cases.
  • FIG. 1 One embodiment of the analyzer according to the present invention is shown in FIG.
  • the FIB 10 and the AES 11 are separated from each other, and the two can be isolated by the gate valve 12.
  • the wafer is first set in the load mechanism 13, vacuum-evacuated in advance, the gate valve 12 is opened, the wafer is introduced into the processing chamber 23 for the FIB 10, and after being positioned in the stage drive mechanism, Observe the appearance using the SIM function provided with SEM14 or FIB10.
  • the stage drive mechanism is premised on XY Z three-axis drive unless otherwise specified.
  • the positional relationship between the FIB column 10 and the SEM column 14 is adjusted in advance so that the electron beam is focused on the processing point by the FIB. For this reason, it is possible to monitor the progress of the processing at a certain frequency during the processing of the cross section in the FIB and monitor the progress of the processing to determine the processing end point with high accuracy.
  • An infrared heater 19 is installed in the loading mechanism 13 so that the wafer can be baked if necessary. After that, the wafer was opened with the gate valve 12 between it and the AES 11, introduced into the analysis chamber 28 for the AES 11, and positioned, and then, if necessary, cut out with the ion gun 17.
  • Adsorbed atoms are removed, and cross-section observation and elemental analysis are performed using the SEM function attached to AE S11.
  • F Since the hole is drilled vertically in IB10, AES is attached to the vacuum container 28 diagonally so that the cross section can be seen.
  • the AES is a form that uses a combination of the SCA for the electron gun 21 and the detector. After the measurement is completed, it is pulled out of unload chamber 20 and moved to the next process or locked out.
  • the analyzer is a separate container, AES, which requires a particularly high degree of vacuum, has good maintainability, such as maintaining the degree of vacuum, but requires only two positions on the stage. Times needed. However, it is easy to detect relatively large holes drilled by the FIB in the analysis chamber, and this is not an essential minus.
  • FIGS. 5 and 6 Another embodiment in which the FIB column 10 and the AES column 11 are installed in different chambers is shown in FIGS. 5 and 6.
  • the wafer to be analyzed introduced from the loading chamber 13 is introduced into the processing chamber 23 via the gate valve 12 and is usually placed at a plurality of predetermined positions by the FIB 10.
  • Cross-section processing is performed.
  • electrons are irradiated from the electron shower 25 to the region including the ion beam irradiation region in order to avoid movement of the processing position due to accumulation of ion charges.
  • the secondary particle detector 24 can detect both secondary ions and secondary electrons.
  • a scintillator and a photomultiplier tube are installed in a channeltron, microchannel plate, or microphone channel plate. The structure of the detector combined is taken. The wafer for which the cross-section processing has been completed moves to the analysis chamber 28 via the gate valve 12 next.
  • the CMA-type detector used as the AES lens tube 1 is equipped with electron beam focusing and scanning functions.
  • Analyze target by detecting with secondary electron detector 27 The SEM image is obtained, and it is used to perform beam positioning to the analysis position after moving to the predetermined position on the stage. Therefore, the analysis chamber 28 is equipped with a rare gas ion gun 26 to remove a natural oxide film or the like covering the surface to be analyzed. Next, the object to be analyzed is irradiated with an electron beam by AES 11 and analyzed. This operation is repeated for a plurality of specified locations, and the analysis data acquisition ends. After that, the wafer is taken out to the loading chamber 20 via the gate valve 12. The above is the processing / analysis process in the apparatus of the present embodiment.
  • One of the advantages of this embodiment is that the AES analysis in the analysis chamber 28 requires an ultra-high vacuum, but the processing chamber 23 does not require an ultra-high vacuum. This reduces the load on the processing chamber 23 to vacuum. This reduces the restrictions on having a drive in the processing chamber 23 ⁇ . Further, processing can be advanced in the processing chamber 23 while the analysis is being performed in the analysis chamber 28. Furthermore, since the chamber is evacuated to a vacuum inside the processing chamber 23, it is evacuated for the time required for processing before the wafer is introduced into the analysis chamber 28. ⁇ ⁇ C can be introduced, and there is no need to provide a preliminary evacuation time until degassing from the sample, which is usually required in ultra-high vacuum, is reduced. The total time required for these rework and analysis processes can be reduced.
  • the loading chamber 20 is also provided on the analysis chamber 28 side at the time when the analysis in the analysis chamber 28 is completed. This is because the wafer cannot be taken out to the processing chamber 23 side because the holder on which the wafer is placed is inserted. However, when returning the processed wafer to the line after processing and analysis, it may be necessary to refill the processing traces. At this time, the next item is not put in the processing chamber 23, but is added from the analysis chamber 28. It is necessary to return to ethiamba 23. In this case, an improved device configuration is shown in the following embodiment. Another advantage of the present embodiment is that since an ultra-high vacuum is not required for the processing chamber 23, the etching gas and the deposition gas are supplied from the gas supply device 22 to the processing chamber 23 via the nozzle. In addition, it is possible to increase the processing speed and implement backfilling.
  • the next wafer cannot be introduced into the processing chamber 23 in order to backfill the processing trace, and the advantage of using another chamber is partially lost in that case. Therefore, the device configuration shown in FIGS. 7 and 8 was adopted.
  • the loading chamber 13 was provided on the side of the analysis chamber 23, but this was eliminated, and the standby chamber 31 was provided at the end of the processing chamber 23. The system was provided. With this method, the wafer after the analysis is returned to the processing chamber 23, and when backfilling the processing traces, the wafer that has been processed in the processing chamber 23 is transferred to the temporary standby chamber 31.
  • the wafer having been analyzed is moved from the analysis chamber 28 to the processing chamber 23, and is introduced into the mouthing chamber 13 via the gate valve 12 as it is.
  • the stage is moved below the evacuation chamber 31, the evacuation wafer is lowered, and introduced into the analysis chamber 28 via the gate valve 12.
  • the analyzed wafer is returned from the loading chamber 13 to the processing chamber 23 and backfilled.
  • the analysis of the introduced wafer is being performed in the analysis chamber 28 2.
  • the wafer once returned to the processing chamber 23 is further moved to the loading chamber 13, but in order to avoid this, a chamber similar to the retraction chamber 31 is also provided on the analysis chamber 28 side. It is sufficient to transfer the wafer between the evacuation chambers, but the analysis chamber 28 is a chamber that requires an ultra-high vacuum.
  • the CMA in the analysis chamber has strict restrictions on the distance from the sample (working distance), and the z-axis is usually adjusted by adjusting the stage height to the position where the secondary electron yield is highest.
  • it is possible to assist the Z-axis positioning mechanism by providing the Z-axis stage with a positioning mechanism based on the electric capacity and the scattering direction of light.
  • Fig. 9 shows FIB 10 and AES 11 housed in the same container without a separating wall such as a gate valve.
  • a separating wall such as a gate valve.
  • the enclosure and wafer of FIB 10 and AES 11 are shown. Only the positional relationship of 4 is shown. The advantage is that the time and complexity of moving between containers in the case of FIGS. 4 to 8 can be avoided.
  • Fig. 9 shows FIB 10 and AES 11 housed in the same container without a separating wall such as a gate valve.
  • FIB 10 and AES 11 are arranged at a fixed interval, and after the FIB 10 exposes a vertical cross section of the foreign matter, the movement amount is known when measuring AES 11 At a distance of, the position of the foreign matter is aligned on the optical axis of the AES 11 and the cross section of the foreign matter is obliquely inclined to AES 11 for observation and analysis. In this case, extra time is required for positioning, but there is ample room for the layout of FIB 10 and AES 11 and the design becomes easier.
  • the advantage is that atoms that are sparsely packed by 0 are less likely to contaminate the surroundings, including AES.
  • FIG. 10 is a view showing another embodiment.
  • the CMA type AES 11 and the tip of the FIB 10 are not in contact with each other. 1 and FIB 10 are both tilted from the surface of wafer 4. You. In this case, there is a difficulty in accurately focusing both on the foreign matter, but even when using the SEM function as shown in Fig. 11, the excavation surface 34 and the foreign matter 6 can be seen from just above the cross section. The observable point, as well as the foreign matter and the surrounding structure, are cut obliquely, so that they have the advantage of being enlarged in the depth direction and easy to see.
  • the tilt angle of FIB is preferably 30 ° or more and 90 ° or less, more preferably about 60 °, with respect to the vertical direction from the viewpoint of sputtering efficiency. Also, if the angle is 60 °, the cross section is doubled, which is advantageous in evaluating the film structure. This arrangement has a large time-saving effect in that there is no movement between the beam axes of the analyzer and only one alignment with the foreign matter is required.However, atoms sputtered by the FIB can damage the AES electrodes and the surface of the structure. It may contaminate, change properties and deteriorate.
  • FIG. 13 shows an arrangement in which FIB 10 and AES 11 form a right angle when viewed from above while maintaining the inclination of FIB 10 and AES 10.
  • Fig. 14 shows an arrangement between Fig. 10 and Fig. 13 where the FIB 10 optical axis is taken from a direction of 135 ° with respect to the AES 11 optical axis.
  • Fig. 15 summarizes such a method of positioning foreign objects when the rotary stage is mounted on the XYZ stage. That is, suppose that the coordinates of the center of rotation are (X 0, Y 0) with respect to the foreign object coordinates (X, y) defined on the XY stage. The angle formed by the mapping of the optical axes of FIB and AES onto the horizontal plane.
  • FIG. 16 conceptually shows the whole image of the apparatus in the case of FIG. 10.
  • the wafer is transferred from the wafer case 39 to the loading chamber 13 and the main chamber 37 by the wafer introduction mechanism 42. Automatically introduced.
  • FIB 10 when FIB 10 is provided in the vicinity of AES 11, there is a concern that irradiated ions of FIB or ions resputtered by the irradiated ions may contaminate the detector portion of AES and change its characteristics.
  • Fig. 17 shows an example in which a shutter 45 is provided at the end of the AES 11 to avoid such contamination of the AES 11, and the shutter 45 is connected to the AES 11 during excavation with the FIB.
  • Orange (4) Install it so as to cover the electron inlet, and in the case of AES, rotate the rotating port (44) to enable AES analysis.
  • FIG. 18 shows an example of such a device.
  • the main body of the FIB is supported by a column 47, and a bellows 48 is provided in the middle so that the shaft position can be changed, and the optical axis is adjusted at the position of the bolt 49.
  • the ion pump 46 is supported by another support column 47 so that the weight of the ion pump 46 is not burdened, and the ion pump 46 is connected to the FIB main body 10 by a bellows 49.
  • Fig. 19 shows a modified example of the mouth mechanism when FIB 11 and AES 11 become a body container. Open 1 and do it manually.
  • a wafer chuck mechanism can be provided for automation.
  • a wafer is introduced into the load lock chamber in the foreground, and is evacuated once while being baked with an infrared lamp or the like as necessary, and then introduced into the measurement chamber 37. After drilling, analyze with AES11.
  • the optical axis of the optical microscope 40 does not coincide with AES 11 and FIB 10, but is effective for confirming the positional relationship between the foreign object and the peripheral devices in advance.
  • Fig. 20 shows a conceptual diagram of the equipment when LIMS-TOF (Laser Induced Time-of-Flight Mass Spectrometer) is used instead of AES.
  • a pilot beam using a He-Ne laser beam or the like is applied to a specific position, and a laser beam for abrasion (for evaporating and ionizing foreign matter) is incident on the same position from the beam introduction window 60 and the objective lens 6 1 Focus on foreign matter on 3 2.
  • Part of the foreign matter is ionized, accelerated by the extraction electrode 52, and relocated by the orbit deflection electrode 54.
  • the mass-Z charge ratio of the region (proportional to the square of the time of flight) can be determined.
  • this method can obtain information on the structure of organic substances and isotopes, and is characterized by a large amount of information.
  • the degree of vacuum AES 11 requires a degree of vacuum of 10-8 Pa, whereas the order of 10-4 Pa is sufficient, so that maintenance is easy. is there.
  • the laser is a probe, there is no charge on the sample, which is advantageous when measuring insulators and organic substances.
  • foreign matter is a destructive inspection, it is not suitable for line analysis and repeated measurement such as EDX.
  • the following describes in detail the process of generating foreign substances based on the results of the analysis by the initial analysis equipment group and the above-mentioned database group, the equipment, and the method for quickly identifying the causative substance.
  • Database ( e ) is difficult to maintain directly as a database Peri, not easy to use. This is because not only does the capacity itself become enormous, but also because of the frequent changes associated with process improvements, an enormous amount of time is required for database maintenance.
  • the database (e) relating to the materials on the individual devices is constructed by registering each element, not each coordinate.
  • a specific construction method will be described with reference to an example of a computer screen shown in FIG. Fig. 21 shows the screen assuming software built with Visua 1 Basic, but the following functions can be realized in other software development environments as well.
  • the device base Y, product, and process ID are specified, then the deposition process AA is specified, and then the materials used in the process of forming the corresponding element are listed A. Select from C to F from ⁇ F, and enter and register the film thickness.
  • a device pattern image is displayed on the screen as shown in Fig. 22 in order to identify the elements that originally exist above and below the foreign matter, and the operator is informed of the foreign matter position and what elements are arranged in the vicinity thereof. Specify. The operator registers elements above and below the foreign object in the foreign object coordinates as A and B from the lists A to G. If the element can be specified, the material and thickness for each element are
  • Virtual material layered from below The process of generating foreign matter can be specified to some extent only by illustrating the typical film structure.
  • a film cannot be formed by the plasma process, and the resist is a thick film formation process with a thickness of several ⁇ m, but it does not remain on the product in principle. Therefore, it is preferable to give these processes a virtual thickness (for example, 100 nm) and display them on the screen.
  • a virtual thickness for example, 100 nm
  • the process is visualized on a screen, which is advantageous in identifying the cause process. is there. On the screen, both the strict evaluation result of the layer structure and such a virtual film structure diagram may be displayed.
  • the re-generation device can be specified by the history database (b) of the wafer, and the re-generation source can be specified by the database (d).
  • the support tool as shown in Fig. 24 will be used to determine the constituent elements and structure of the foreign matter, the materials used for the relevant equipment, and the results of the generated foreign matter. By comparison, it is possible to quickly identify the causative substance, the cause of occurrence, and the countermeasure of the foreign substance.
  • ADVANTAGE OF THE INVENTION it is possible to ultimately analyze a defect caused by a foreign substance in an electronic device such as a highly integrated semiconductor device in a short time. This makes it possible to maintain mass production of fasteners, and is extremely suitable for the manufacture of electronic devices.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

Dans une ligne de production de dispositifs électroniques, afin d'analyser rapidement les éléments d'un corps étranger sur un dispositif et la structure de coupe du corps étranger et sa périphérie, la surface de matière du corps étranger est dégagée, les éléments contenus dans la surface exposée et en coupe autour du corps étranger, la disposition des éléments du dispositif et les épaisseurs de films sont analysés. Un appareil causal qui a généré le corps étranger est spécifié en comparant les résultats de l'analyse avec l'information de dessin et de production se rapportant au dispositif, et une contre-mesure est prise pour l'appareil, produisant ainsi un dispositif électronique. D'une part un appareil servant à dégager la coupe contenant un corps étranger et d'autre part un appareil servant à analyser les distributions des éléments et composés existant sur une ligne dans le plan du corps étranger incluant la coupe contenant le corps étranger sont agencés sur la ligne de production sous forme d'un analyseur de corps étrangers. L'opération, le processus, ou l'appareil provoquant un défaut imputable à un corps étranger dans un dispositif électronique à haut niveau d'intégration peuvent être spécifiés en un temps extrêmement court, et la ligne de production peut être démarrée en un temps très court tout en maintenant une production de masse à haut rendement.
PCT/JP1998/005439 1997-12-03 1998-12-02 Procede de production d'un dispositif electronique et analyseur de corps etrangers a cet effet WO1999028964A1 (fr)

Applications Claiming Priority (2)

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JP9332665A JPH11168126A (ja) 1997-12-03 1997-12-03 電子デバイスの製造方法及びその異物分析装置
JP9/332665 1997-12-03

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JP5381916B2 (ja) * 2010-07-02 2014-01-08 新日鐵住金株式会社 集束イオンビームを用いる微細部位解析装置および集束イオンビームを用いる微細部位解析方法
JP5825797B2 (ja) * 2011-02-08 2015-12-02 株式会社ブリヂストン 高分子材料の評価方法
JP6487225B2 (ja) * 2015-01-30 2019-03-20 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置および欠陥検査システム
CN112146967A (zh) * 2019-06-28 2020-12-29 Fei 公司 用于制备和递送用于带电粒子分析的生物样品的系统和方法

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