WO1999002970A1 - Dispositif permettant d'analyser des couches minces empilees sur des semi-conducteurs - Google Patents

Dispositif permettant d'analyser des couches minces empilees sur des semi-conducteurs Download PDF

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Publication number
WO1999002970A1
WO1999002970A1 PCT/US1998/011562 US9811562W WO9902970A1 WO 1999002970 A1 WO1999002970 A1 WO 1999002970A1 US 9811562 W US9811562 W US 9811562W WO 9902970 A1 WO9902970 A1 WO 9902970A1
Authority
WO
WIPO (PCT)
Prior art keywords
sample
recited
probe beam
light
output signals
Prior art date
Application number
PCT/US1998/011562
Other languages
English (en)
Inventor
Allan Rosencwaig
Jon Opsal
David E. Aspnes
Jeffrey T. Fanton
Original Assignee
Therma-Wave, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/890,697 external-priority patent/US5798837A/en
Priority claimed from US09/015,839 external-priority patent/US6278519B1/en
Application filed by Therma-Wave, Inc. filed Critical Therma-Wave, Inc.
Priority to EP98926302A priority Critical patent/EP1012571A1/fr
Priority to JP2000502402A priority patent/JP4231902B2/ja
Publication of WO1999002970A1 publication Critical patent/WO1999002970A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

L'invention concerne un système de mesure optique qui permet d'évaluer des échantillons constitués de couches minces empilées. Le système comprend un ellipsomètre de référence et un ou plusieurs dispositifs de mesure optique sans contact. L'ellipsomètre de référence est utilisé pour étalonner les autres dispositifs de mesure. Une fois l'étalonnage réalisé, le système peut être utilisé pour analyser des couches minces empilées. Il donne notamment une mesure qui peut être utilisée pour déterminer l'épaisseur optique totale de la pile. En associant cette information aux mesures faites par les autres dispositifs de mesure optique, on obtient des informations plus précises sur les différentes couches.
PCT/US1998/011562 1997-07-11 1998-06-05 Dispositif permettant d'analyser des couches minces empilees sur des semi-conducteurs WO1999002970A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP98926302A EP1012571A1 (fr) 1997-07-11 1998-06-05 Dispositif permettant d'analyser des couches minces empilees sur des semi-conducteurs
JP2000502402A JP4231902B2 (ja) 1997-07-11 1998-06-05 半導体上の多層薄膜積層を解析する装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/890,697 US5798837A (en) 1997-07-11 1997-07-11 Thin film optical measurement system and method with calibrating ellipsometer
US08/890,697 1997-07-11
US09/015,839 US6278519B1 (en) 1998-01-29 1998-01-29 Apparatus for analyzing multi-layer thin film stacks on semiconductors
US09/015,839 1998-01-29

Publications (1)

Publication Number Publication Date
WO1999002970A1 true WO1999002970A1 (fr) 1999-01-21

Family

ID=26687865

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/011562 WO1999002970A1 (fr) 1997-07-11 1998-06-05 Dispositif permettant d'analyser des couches minces empilees sur des semi-conducteurs

Country Status (3)

Country Link
EP (1) EP1012571A1 (fr)
JP (1) JP4231902B2 (fr)
WO (1) WO1999002970A1 (fr)

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261853B1 (en) 2000-02-07 2001-07-17 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
FR2806479A1 (fr) * 2000-07-03 2001-09-21 Commissariat Energie Atomique Procede et dispositif de detection de couches minces
US6408048B2 (en) 2000-03-14 2002-06-18 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
WO2002079760A2 (fr) * 2001-03-30 2002-10-10 Therma-Wave, Inc. Diffusiometre polarimetrique pour mesures de dimensions critiques de structures periodiques
US6472238B1 (en) 2000-02-09 2002-10-29 Therma-Wave, Inc. Evaluation of etching processes in semiconductors
JP2002536657A (ja) * 1999-02-09 2002-10-29 ケーエルエー−テンカー コーポレイション 試料の偏光計スペクトルおよび他の特性を測定するシステム
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
US6515744B2 (en) 2001-02-08 2003-02-04 Therma-Wave, Inc. Small spot ellipsometer
US6532070B1 (en) 2000-07-17 2003-03-11 Therma-Wave, Inc. Method for determining ion concentration and energy of shallow junction implants
US6583875B1 (en) 2000-05-19 2003-06-24 Therma-Wave, Inc. Monitoring temperature and sample characteristics using a rotating compensator ellipsometer
US6583876B2 (en) 2001-05-24 2003-06-24 Therma-Wave, Inc. Apparatus for optical measurements of nitrogen concentration in thin films
US6608689B1 (en) 1998-08-31 2003-08-19 Therma-Wave, Inc. Combination thin-film stress and thickness measurement device
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6689519B2 (en) 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
JP2004504590A (ja) * 2000-07-17 2004-02-12 ソシエテ・ドゥ・プロデュクシオン・エ・ドゥ・ルシェルシェ・アプリケ コンパクトな分光エリプソメータ
US6704661B1 (en) 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6804003B1 (en) 1999-02-09 2004-10-12 Kla-Tencor Corporation System for analyzing surface characteristics with self-calibrating capability
US6829049B1 (en) 2000-05-15 2004-12-07 Therma-Wave, Inc. Small spot spectroscopic ellipsometer with refractive focusing
US6861619B1 (en) 2000-02-07 2005-03-01 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6882413B2 (en) 2002-02-04 2005-04-19 Therma-Wave, Inc. Rotating head ellipsometer
JP2005521891A (ja) * 2002-03-29 2005-07-21 ティンバー テクノロジーズ，インコーポレイティド ツール間整合用の計測回折信号適合化方法
WO2007009078A1 (fr) * 2005-07-12 2007-01-18 Sematech, Inc. Procedes et systemes pour caracteriser des materiaux semi-conducteurs
US7215431B2 (en) 2004-03-04 2007-05-08 Therma-Wave, Inc. Systems and methods for immersion metrology
WO2007092332A1 (fr) * 2006-02-02 2007-08-16 Therma-Wave, Inc. Contrôle haute résolution de variations de dimensions critiques
JP2008122394A (ja) * 2000-12-18 2008-05-29 Centre National De La Recherche Scientifique 偏光解析測定方法および装置
US7430051B2 (en) 2005-10-12 2008-09-30 Sematech Inc. Methods for characterizing semiconductor material using optical metrology
US7453571B1 (en) 2004-01-31 2008-11-18 Kla-Tencor Corporation Dimensional calibration standards
US7580138B2 (en) 2005-07-12 2009-08-25 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7948631B2 (en) 2008-02-28 2011-05-24 Jordan Valley Semiconductors Ltd. Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US7990549B2 (en) 2006-11-30 2011-08-02 Jordan Valley Semiconductors Ltd. Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientation
US8014000B2 (en) 2003-01-16 2011-09-06 Jordan Valley Semiconductors Ltd. Broad band referencing reflectometer
US8119991B2 (en) 2004-08-11 2012-02-21 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
US8153987B2 (en) 2009-05-22 2012-04-10 Jordan Valley Semiconductors Ltd. Automated calibration methodology for VUV metrology system
US8245161B1 (en) 2007-08-16 2012-08-14 Kla-Tencor Corporation Verification of computer simulation of photolithographic process
US8564780B2 (en) 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
DE102005002267B4 (de) * 2005-01-18 2017-02-09 Leica Microsystems Cms Gmbh Verfahren zum Wellenlängenkalibrieren eines optischen Messsystems

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE518122T1 (de) * 2004-05-14 2011-08-15 Kla Tencor Tech Corp Systemn zum messen oder analysieren von proben mit vuv-licht

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EP0396409A2 (fr) * 1989-05-04 1990-11-07 THERMA-WAVE, INC. (a Delaware corporation) Dispositif d'ellipsométrie à grand pouvoir de résolution
US4999014A (en) * 1989-05-04 1991-03-12 Therma-Wave, Inc. Method and apparatus for measuring thickness of thin films
EP0503874A2 (fr) * 1991-03-15 1992-09-16 THERMA-WAVE, INC. (a Delaware corporation) Dispositif de mesure optique à sensibilité augmentée
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US5608526A (en) * 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system

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Publication number Priority date Publication date Assignee Title
EP0396409A2 (fr) * 1989-05-04 1990-11-07 THERMA-WAVE, INC. (a Delaware corporation) Dispositif d'ellipsométrie à grand pouvoir de résolution
US4999014A (en) * 1989-05-04 1991-03-12 Therma-Wave, Inc. Method and apparatus for measuring thickness of thin films
EP0503874A2 (fr) * 1991-03-15 1992-09-16 THERMA-WAVE, INC. (a Delaware corporation) Dispositif de mesure optique à sensibilité augmentée
US5181080A (en) * 1991-12-23 1993-01-19 Therma-Wave, Inc. Method and apparatus for evaluating the thickness of thin films
WO1996012941A1 (fr) * 1994-10-21 1996-05-02 Therma-Wave, Inc. Ellipsometre spectroscopique
US5608526A (en) * 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5581350A (en) * 1995-06-06 1996-12-03 Tencor Instruments Method and system for calibrating an ellipsometer

Cited By (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6608689B1 (en) 1998-08-31 2003-08-19 Therma-Wave, Inc. Combination thin-film stress and thickness measurement device
JP4880122B2 (ja) * 1999-02-09 2012-02-22 ケーエルエー−テンカー コーポレイション 試料の偏光計スペクトルおよび他の特性を測定するシステム
US6804003B1 (en) 1999-02-09 2004-10-12 Kla-Tencor Corporation System for analyzing surface characteristics with self-calibrating capability
JP2002536657A (ja) * 1999-02-09 2002-10-29 ケーエルエー−テンカー コーポレイション 試料の偏光計スペクトルおよび他の特性を測定するシステム
US6611330B2 (en) 1999-02-09 2003-08-26 Kla-Tencor Corporation System for measuring polarimetric spectrum and other properties of a sample
US6734968B1 (en) 1999-02-09 2004-05-11 Haiming Wang System for analyzing surface characteristics with self-calibrating capability
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6261853B1 (en) 2000-02-07 2001-07-17 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6861619B1 (en) 2000-02-07 2005-03-01 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6624393B2 (en) 2000-02-07 2003-09-23 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6472238B1 (en) 2000-02-09 2002-10-29 Therma-Wave, Inc. Evaluation of etching processes in semiconductors
US6678349B2 (en) 2000-03-14 2004-01-13 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US6408048B2 (en) 2000-03-14 2002-06-18 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US6512815B2 (en) 2000-03-14 2003-01-28 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US7248375B2 (en) 2000-03-29 2007-07-24 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6972852B2 (en) * 2000-03-29 2005-12-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6654131B2 (en) 2000-03-29 2003-11-25 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6829057B2 (en) 2000-03-29 2004-12-07 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US7767956B2 (en) 2000-05-04 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US6987572B2 (en) 2000-05-04 2006-01-17 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US6689519B2 (en) 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US7462814B2 (en) 2000-05-04 2008-12-09 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
US6940596B2 (en) 2000-05-15 2005-09-06 Therma-Wave, Inc. Refractive focusing element for spectroscopic ellipsometry
US6829049B1 (en) 2000-05-15 2004-12-07 Therma-Wave, Inc. Small spot spectroscopic ellipsometer with refractive focusing
US6583875B1 (en) 2000-05-19 2003-06-24 Therma-Wave, Inc. Monitoring temperature and sample characteristics using a rotating compensator ellipsometer
US6894781B2 (en) 2000-05-19 2005-05-17 Therma-Wave, Inc. Monitoring temperature and sample characteristics using a rotating compensator ellipsometer
FR2806479A1 (fr) * 2000-07-03 2001-09-21 Commissariat Energie Atomique Procede et dispositif de detection de couches minces
US7099007B2 (en) 2000-07-17 2006-08-29 Therma-Wave, Inc. Method for determining ion concentration and energy of shallow junction implants
US6532070B1 (en) 2000-07-17 2003-03-11 Therma-Wave, Inc. Method for determining ion concentration and energy of shallow junction implants
US6665071B2 (en) 2000-07-17 2003-12-16 Therma-Wave, Inc. Method for determining ion concentration and energy of shallow junction implants
US6859281B2 (en) 2000-07-17 2005-02-22 Therma-Wave, Inc. Method for determining ion concentration and energy of shallow junction implants
JP2004504590A (ja) * 2000-07-17 2004-02-12 ソシエテ・ドゥ・プロデュクシオン・エ・ドゥ・ルシェルシェ・アプリケ コンパクトな分光エリプソメータ
JP2008122394A (ja) * 2000-12-18 2008-05-29 Centre National De La Recherche Scientifique 偏光解析測定方法および装置
US6738138B2 (en) 2001-02-08 2004-05-18 Therma-Wave, Inc. Small spot ellipsometer
US6515744B2 (en) 2001-02-08 2003-02-04 Therma-Wave, Inc. Small spot ellipsometer
US6870621B2 (en) 2001-02-08 2005-03-22 Therma-Wave, Inc. Small spot ellipsometer
US6909507B2 (en) 2001-03-30 2005-06-21 Therma-Wave, Inc. Polarimetric scatterometry methods for critical dimension measurements of periodic structures
WO2002079760A2 (fr) * 2001-03-30 2002-10-10 Therma-Wave, Inc. Diffusiometre polarimetrique pour mesures de dimensions critiques de structures periodiques
US7471392B2 (en) 2001-03-30 2008-12-30 Tokyo Electron Limited Polarimetric scatterometry methods for critical dimension measurements of periodic structures
WO2002079760A3 (fr) * 2001-03-30 2003-03-20 Therma Wave Inc Diffusiometre polarimetrique pour mesures de dimensions critiques de structures periodiques
US7289219B2 (en) 2001-03-30 2007-10-30 Tokyo Electron Limited Polarimetric scatterometry methods for critical dimension measurements of periodic structures
US6784993B2 (en) 2001-05-24 2004-08-31 Therma-Wave, Inc. Apparatus for optical measurements of nitrogen concentration in thin films
US6882421B2 (en) 2001-05-24 2005-04-19 Therma-Wave, Inc. Apparatus for optical measurements of nitrogen concentration in thin films
US6583876B2 (en) 2001-05-24 2003-06-24 Therma-Wave, Inc. Apparatus for optical measurements of nitrogen concentration in thin films
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
US6778911B2 (en) 2001-07-16 2004-08-17 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6704661B1 (en) 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6947850B2 (en) 2001-07-16 2005-09-20 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6931361B2 (en) 2001-07-16 2005-08-16 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US7031848B2 (en) 2001-07-16 2006-04-18 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6882413B2 (en) 2002-02-04 2005-04-19 Therma-Wave, Inc. Rotating head ellipsometer
JP2005521891A (ja) * 2002-03-29 2005-07-21 ティンバー テクノロジーズ，インコーポレイティド ツール間整合用の計測回折信号適合化方法
US8054453B2 (en) 2003-01-16 2011-11-08 Jordan Valley Semiconductors Ltd. Broad band referencing reflectometer
US8564780B2 (en) 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US8014000B2 (en) 2003-01-16 2011-09-06 Jordan Valley Semiconductors Ltd. Broad band referencing reflectometer
US7453571B1 (en) 2004-01-31 2008-11-18 Kla-Tencor Corporation Dimensional calibration standards
US7436527B2 (en) 2004-03-04 2008-10-14 Kla-Tencor Corporation Systems and methods for immersion metrology
US7215431B2 (en) 2004-03-04 2007-05-08 Therma-Wave, Inc. Systems and methods for immersion metrology
US8119991B2 (en) 2004-08-11 2012-02-21 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
DE102005002267B4 (de) * 2005-01-18 2017-02-09 Leica Microsystems Cms Gmbh Verfahren zum Wellenlängenkalibrieren eines optischen Messsystems
US7626712B2 (en) 2005-07-12 2009-12-01 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7580138B2 (en) 2005-07-12 2009-08-25 Sematech, Inc. Methods and systems for characterizing semiconductor materials
WO2007009078A1 (fr) * 2005-07-12 2007-01-18 Sematech, Inc. Procedes et systemes pour caracteriser des materiaux semi-conducteurs
US7430051B2 (en) 2005-10-12 2008-09-30 Sematech Inc. Methods for characterizing semiconductor material using optical metrology
WO2007092332A1 (fr) * 2006-02-02 2007-08-16 Therma-Wave, Inc. Contrôle haute résolution de variations de dimensions critiques
KR101486899B1 (ko) * 2006-02-02 2015-01-28 케이엘에이-텐코어 코오포레이션 임계치수 변동의 고해상도 감시
US7990549B2 (en) 2006-11-30 2011-08-02 Jordan Valley Semiconductors Ltd. Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientation
US8245161B1 (en) 2007-08-16 2012-08-14 Kla-Tencor Corporation Verification of computer simulation of photolithographic process
US8943443B1 (en) 2007-08-16 2015-01-27 Kla-Tencor Corporation Verification of computer simulation of photolithographic process
US7948631B2 (en) 2008-02-28 2011-05-24 Jordan Valley Semiconductors Ltd. Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US8153987B2 (en) 2009-05-22 2012-04-10 Jordan Valley Semiconductors Ltd. Automated calibration methodology for VUV metrology system
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers

Also Published As

Publication number Publication date
JP4231902B2 (ja) 2009-03-04
JP2003524748A (ja) 2003-08-19
EP1012571A1 (fr) 2000-06-28

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