WO1998044175A1

WO1998044175A1 - Epitaxial growth furnace

Info

Publication number: WO1998044175A1
Application number: PCT/JP1998/000833
Authority: WO
Inventors: Kazutoshi Inoue; Masato Imai; Masanori Mayusumi; Shinji Nakahara
Original assignee: Super Silicon Crystal Research Institute Corp.
Priority date: 1997-03-28
Filing date: 1998-02-27
Publication date: 1998-10-08

Abstract

An epitaxial film formed on the surface of a wafer by the steps of supplying a material gas from an injection nozzle having an injection port protruding into a reaction chamber in which a reference gas flow is formed, defining a reference gas atmosphere space upstream of the supply position and a reaction gas atmosphere space downstream of the supply position and moving the wafer from the reference gas atmosphere space to the reaction gas atmosphere space.

Description

Specification

Epitaxial growth reactor technical field

The present invention relates to an epitaxy growth furnace for performing an epitaxy growth process on a surface of a semiconductor wafer substrate. Background art

Currently, the most widely studied and applied method for epitaxial growth of silicon wafers is the H-Si-C1-based CVD (Chemical vapor deposition) method. In this method, a silicon source gas is supplied to a silicon substrate heated to a high temperature by a hydrogen carrier, and a silicon single crystal is deposited and grown on the substrate through an H-Si-C1 system reaction. As a silicon source gas, SiCl ₄ , SiHCh, SiH ₂ Cl ₂ , and SiH ₄ are generally used.

Various types of epitaxy growth reactors for performing such epitaxy growth processing have been conventionally used. For example, a single-wafer apparatus is suitable as an epitaxial growth method for a large-diameter silicon wafer. In this apparatus, a wafer substrate is placed on a susceptor in a chamber in a state where the inside of a chamber is heated by a radiation heating method using an infrared lamp, and a reaction gas is sent into the inside of the chamber. In this apparatus, since the silicon wafer substrates are processed one by one, the reaction chamber itself can be made compact. In addition, it is easy to design heating conditions, gas flow distribution, etc., and the uniformity of the properties of the epitaxial film can be improved.

In the conventional epitaxial growth method and apparatus as described above, the wafer substrate is heated in a reference gas atmosphere such as hydrogen while being placed at a fixed position in the chamber. After that, the material gas is newly released into the reference gas in the chamber 1 and supplied onto the wafer substrate. As a result, the reaction gas in which the material gas is mixed with the reference gas Then, the growth of the epitaxial film on the surface of the wafer substrate is started. In order to uniformly grow an epitaxial film on a wafer substrate, it is necessary to keep the reaction gas atmosphere constant immediately after the start of the epitaxial growth process. Therefore, in the conventional epitaxy growth method and apparatus, the material gas is always kept flowing in a line different from the line leading to the inside of the chamber, and the line is switched to the line leading to the chamber at the start of the growth process. The gas flow released by starting the growth process is kept constant.

That is, in the method of simply opening the cock into the chamber and releasing the material gas, at the beginning of the discharge, there is an uneven state in which the gas outflow increases from the beginning to stabilizes.

Also, even if the material gas is blown into the chamber at a stretch by switching the vent line that constantly flows the material gas, it takes time until a stable reaction gas atmosphere is reached from the state where there is no material gas before that. . As a result, the epitaxial growth process proceeds during that time, and a non-uniform epitaxy film grows on the silicon wafer in a non-uniform atmosphere. Disclosure of the invention

SUMMARY OF THE INVENTION In view of the above problems, it is a main object of the present invention to provide an epitaxy growth furnace capable of growing a uniform epitaxy film on the surface of a wafer substrate from the start of the epitaxy growth processing of a wafer.

According to one preferred embodiment of the present invention, the semiconductor is heated to a predetermined growth temperature in a furnace filled with a semiconductor wafer reference gas that has undergone a wafer preparation process including removal of a surface oxide film, cleaning and drying. An epitaxy growth furnace that performs epitaxy growth processing on the surface of a semiconductor wafer substrate by maintaining the reaction gas containing a material gas in an atmosphere is provided.

A cylindrical chamber part, Gas flow forming means for generating a gas flow in a specific direction of the reference gas not containing the material gas in a part of the chamber;

Material gas supply means for supplying the material gas into the gas flow at an intermediate position of the gas flow in the chamber section;

The gas flow forming means generates the gas flow in a cylindrical chamber portion formed in the furnace,

The material gas supply means has an injection nozzle provided so that an injection port protrudes into a part of the chamber,

An epitaxy film is grown on a surface of a semiconductor wafer substrate while holding the wafer in a reaction gas atmosphere space formed downstream of the material gas supply position of the gas flow.

According to the epitaxy growth furnace of the present invention, the wafer substrate preheated to the growth temperature in the reference gas atmosphere in the furnace is moved to the reaction gas atmosphere space in the furnace, so that the epitaxy film is formed on the wafer substrate surface. Can grow. In other words, the reference gas atmosphere space for heating and the reaction gas atmosphere space are formed as separate spaces in the same furnace, so that the atmosphere of the reaction gas atmosphere space can be regulated independently. it can. Therefore, only by moving the wafer substrate itself to the stable reaction gas atmosphere space in advance, the growth processing of the epitaxial film on the surface of the wafer substrate can be started. Therefore, unlike the conventional apparatus in which the wafer position is fixed and the atmosphere in the same space is changed to the reaction gas atmosphere, a non-uniform state until the atmosphere becomes stable does not occur. The process of growing a uniform epitaxial film on the semiconductor wafer can be started.

Further, in the epitaxial growth reactor of the present invention, the movement of the wafer substrate starts the growth processing of the epitaxial film in a stable reaction gas atmosphere state, so that the start of the growth processing can be clearly determined. In addition, since the growth of the epitaxial film proceeds in a constant state from the beginning, the processing time can be grasped more accurately, and the growth state Control becomes easy.

The epitaxy growth process can also be terminated by stopping the supply of the material gas, as in the conventional case. However, if the reaction gas atmosphere becomes non-uniform after stopping the supply of the material gas, it is difficult to clearly identify the end of the growth process, and the material gas is released until the next new growth process starts. After that, it takes time to obtain a stable reaction gas atmosphere again.

Therefore, if the wafer substrate is moved to a reference gas atmosphere space where no source gas is present after the predetermined epitaxy growth process is performed, the epitaxy growth process does not proceed and the growth process can be terminated. In this termination method, since the reaction gas atmosphere space is maintained in a stable state, the time required for stabilization is not required until the start of the next new epitaxy growth process. In addition, since the epitaxial growth process ends at the same time as the movement of the substrate, the end of the epitaxial growth can be clearly determined, and the control of the growth state becomes easier.

In order to obtain a reaction gas atmosphere space different from the reference gas atmosphere space in the furnace, a gas flow in a specific direction of the reference gas is generated in the furnace, and a material gas is generated at a position halfway in the flow of the reference gas flow. Is supplied in a constant amount. In this way, a stable reaction gas atmosphere can be obtained at a position downstream of the material gas supply position, and this atmosphere is kept constant as a reaction gas atmosphere space. On the other hand, the upstream of the supply position becomes the reference gas atmosphere space.

Therefore, by moving the wafer substrate from the upstream reference gas atmosphere space thus obtained to the downstream stable reaction gas atmosphere space, a uniform epitaxy film growth state can be obtained immediately on the wafer substrate. From the start of the growth process, a stable and uniform epitaxial film can be grown.

Further, when terminating the epitaxial growth process, the wafer substrate is moved from the reaction gas atmosphere space downstream of the material gas supply position where the epitaxial growth process is performed to the reference gas upstream of the supply position. What is necessary is just to move to an atmosphere space. In this case, since the wafer substrate is placed in a space where no material gas is present, the epitaxial growth process ends immediately.

Further, if a transfer means for moving the wafer substrate from the reference gas atmosphere space to the reaction gas atmosphere space, and a heating means for heating the wafer substrate in the furnace are provided, the heating means in the reference gas atmosphere space may be used. The wafer substrate heated to the growth temperature can be moved to the reaction gas atmosphere space by the transfer means. If the reaction gas atmosphere space has been prepared in advance in a stable manner, the movement of the wafer substrate by this transfer means immediately starts the growth of a uniform epitaxy film in a uniform state.

If the wafer substrate is quickly moved from the reaction gas atmosphere space to the reference gas atmosphere space by the transfer means, contrary to the start of the epitaxy growth process, the reference gas atmosphere space does not contain a material gas. The epitaxy growth process ends immediately.

The epitaxy growth reactor of the present invention has a structure in which a reference gas atmosphere space and a reaction gas atmosphere space separate from the reference gas atmosphere space are formed in the furnace, and a gas flow is formed in a cylindrical chamber provided in the furnace. The forming means forms a gas flow in a specific direction by the reference gas, and material gas supply means for supplying the material gas at a position in the middle of the gas flow is provided such that the ejection port projects in a part of the chamber. It is equipped with a spray nozzle.

When forming a reference gas atmosphere space upstream of the material gas supply position and a reaction gas atmosphere space downstream in a part of the chamber, if the material gas ejection port is located on one wall of the chamber, the material gas flows along the wall. As a result, the material gas flow in a part of the chamber is deviated, and mixing with the reference gas cannot be performed well. For this reason, a uniform reaction gas atmosphere cannot be obtained near the jet port, and the atmosphere is not stable unless it is separated to some extent in the downstream direction.

However, in the epitaxial growth reactor of the present invention, the chamber of the injection nozzle is Since the material gas is ejected from the ejection port projecting inward from the wall, the material gas is supplied from the position protruding into the chamber without flowing along the chamber wall, and is uniformly distributed in the chamber at the downstream portion. Flow in distribution. Therefore, downstream of the supply position, the mixing of the reference gas and the material gas is not biased within the chamber, and the reaction gas tends to be uniform.

According to another aspect of the present invention, the epitaxy growth reactor comprises:

The injection nozzle may eject a material gas in a direction intersecting a flow direction of the gas flow.

In the present invention, since the injection nozzle ejects the material gas in a direction intersecting the flow direction of the gas flow, the distribution of the material gas becomes more uniform within a part of the chamber. For example, when the injection nozzle is provided above the chamber, the material gas may be injected downward or obliquely downward of the chamber. In this case, the material gas flows uniformly inside the chamber without flowing along the upper wall of the chamber. In order to obtain a uniform reaction gas atmosphere on the wafer substrate during the epitaxy growth process so as to grow a uniform epitaxy film on the wafer substrate, the above-mentioned material gas is introduced into the reference gas flow. Desirably, the dispersion is more uniform. According to a preferred embodiment of the present invention, the epitaxy growth reactor,

The injection nozzle injects the material gas toward a semiconductor wafer substrate held on a downstream side in a flow direction of the gas flow during execution of an epitaxy growth process.

According to the present invention, the material gas directed from the injection position to the wafer substrate on the downstream side is uniformly dispersed in the reference gas by the injection nozzle, and when reaching the holding area of the wafer substrate, a uniform reaction gas atmosphere is formed. Become.

According to still another preferred aspect of the present invention, in the epitaxy growth furnace, the injection nozzle faces the wafer substrate held on the downstream side in the gas flow direction during execution of the epitaxy growth process. It has an ejection surface, and this ejection surface is in front The material gas is substantially equal to the outer shape of the surface of the semiconductor wafer substrate, and the material gas is injected from a plurality of injection holes provided on the injection surface. According to such a configuration of the injection nozzle, the material gas injected from the injection surface substantially equal to the wafer substrate surface flows downstream together with the reference gas flow, and the reaction gas atmosphere is uniform in the surface region of the wafer substrate. To form

According to still another preferred aspect of the present invention, in the epitaxy growth reactor, the injection hole provided in the injection surface may discharge the material gas obliquely downward toward the direction of the gas flow. It is a feature.

According to the present invention, the material gas can be more reliably flowed toward the wafer substrate surface by the injection hole.

According to still another preferred aspect of the present invention, the epitaxy growth reactor is characterized in that the injection holes provided on the injection surface are uniformly distributed over substantially the entire injection surface. It is assumed that.

According to the present invention, the material gas can be more uniformly dispersed from the beginning of the injection from the injection surface.

As described above, according to the present invention, the wafer substrate is moved only from the reference gas atmosphere space formed in the epitaxial growth furnace to the reaction gas atmosphere space, and the wafer substrate is started from the beginning of the epitaxial growth process. This has the effect that a uniform epitaxial film grows.

The above and other features and advantages of the present invention will be more clearly understood from the following description of the preferred embodiments thereof, taken in conjunction with the accompanying drawings, which are provided by way of non-limiting example only. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic diagram showing a schematic configuration of an epitaxial growth reactor according to one embodiment of the present invention. FIG. 2A is a plan view showing the ejection surface of the ejection nozzle according to one embodiment of the present invention. FIG. 2B is an enlarged cross-sectional view showing the injection surface and the injection hole of the injection nozzle according to one embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

As shown in FIG. 1, the epitaxy growth reactor 1 of the present embodiment includes a cylindrical reaction chamber 22, a plurality of infrared lamps 3 for heating the inside of the reaction chamber 22, and an injection for injecting a material gas. A nozzle 5 is provided, and a load lock chamber 12 for storing a plurality of semiconductor wafer substrates W is connected thereto. Further, a robot arm 8 for carrying a wafer in the load lock chamber 12 and the reaction chamber 122 is disposed inside the epitaxy growth reactor 1, and the wafer is mounted on the tip of the robot arm 8. Robot hand 9 is equipped.

The load lock chamber 12 is provided with an elevator shaft 17 at the lower part, and the inside of the chamber 1 is purged with clean nitrogen. Elevator in the load lock chamber 2-At the end of the evening shaft 17, a multi-stage carrier 15 is detachably mounted. The carrier 15 has a plurality of shelves 16 having a multi-tiered structure at the top and bottom. The mouth chamber 12 is in communication with the reaction chamber 22 through a robot arm 8, a robot hand 9, and an opening through which the wafer W gripped by the hand 9 can pass. Each shelf 16 is open on the front side facing this opening. In addition, each shelf 16 can be individually moved to the opening by the elevating operation of the elevator shaft 17.

In this embodiment, the semiconductor wafer which has undergone the wafer preparation process including the removal, cleaning and drying of the surface oxide film is stored in each shelf 16 of the multi-stage carrier 15 before the epitaxial growth process. The carrier 15 is exchangeably mounted on the elevator shaft 17 in the mouth chamber 12. Then, as described later, the wafers on each shelf 16 are taken out of the shelf 16 by the robot hand 9 and the robot arm 8 Is transported into the reaction chamber 122. In the empty shelf 16, processed wafers transported by the robot arm 8 from the inside of the reaction chamber 22 as described later are stored again. When all the shelves 16 are filled with processed wafers, the multi-stage carrier 15 is removed from the elevator shaft 17 and sent from the mouth and the drop chamber 12 to another location, for example, an inspection process. .

The multi-axis robot 18 takes in the wafer from the mouth lock chamber 2 by the robot hand 9 onto the robot arm 8 or transfers the wafer from the mouth arm 8 to the mouth lock chamber 2 by the robot hand 9 and transfers the wafer. The robot arm 8 carries out each operation of transferring the wafer between the mouth drop chamber 12 and the wafer loading position in the reaction chamber 122.

In this embodiment, the epitaxy growth reactor 1 is of a type in which a single large-diameter wafer is subjected to epitaxy growth processing in one epitaxy growth processing, but the present invention is limited to this type. It is not something to be done. The epitaxial growth reactor 1 includes a quartz outer shell 13 having a front flange 11 a having an opening and a rear flange 11 b. A gate 12 that can be opened and closed is attached to the opening of the front flange 11 a so as to demarcate the mouth and the drop chamber 2. That is, with the gate 12 open, the reaction chamber 122 of the epitaxy growth furnace 1 communicates with the mouth chamber 12 through its opening. On the other hand, the rear flange 11b is closed by a removable lid 14. The epitaxial growth reactor 1 is configured to perform an epitaxial growth process on the wafer inside the reaction chamber 122 in a state sealed by the rear flange lib and the gate 12. In order to supply hydrogen gas into the reaction chamber 122, a gas injection port 4 is provided on the front flange 11a and a gas vent port 19 is provided on the rear flange 11b, and an injector port is provided. The hydrogen gas introduced from 4 flows through the reaction chamber 22 and is discharged from the gas vent boat 19. That is, inside the reaction chamber 22 A hydrogen gas flow is formed with the gas injector port 4 upstream and the gas vent port 19 downstream. A hydrogen gas supply device (not shown) is connected to the injector port 4 and a vent control device (not shown) is connected to the gas vent port 19 by piping.The flow of hydrogen gas is always constant in the reaction chamber 122. The gas pressure, gas flow rate, etc. are adjusted by pipes so that the flow rate can be controlled. The silicon source gas as a material gas to the reaction chamber one 2 2, for example, S i C, S iHC h , and S iH ₂ C, in order to supply the S iH ₄ or the like the hydrogen gas stream, the reaction An injection nozzle 5 is provided substantially at the center of the upper part of the chamber 122. A silicon source gas supply device (not shown) is connected to the injection nozzle 5 by a pipe. The pressure and flow rate of the silicon source gas are adjusted by piping.

The injection nozzle 5 has an injection surface 6 protruding downward in the reaction chamber 122, and the diameter of the injection surface 6 is about 10 to 60 mm larger than the diameter of the wafer W. As shown in FIG. 2A, the injection surface 6 is provided with a plurality of injection holes 7 for injecting a silicon source gas so as to be substantially uniformly dispersed over the entire surface of the injection surface 6. The inner diameter of each of the injection holes 7 is about 0.3 to 3 mm. As shown in Fig. 2b, the center axis of the injection hole 7 is inclined 10 to 85 degrees to the rear flange 11b side with respect to the injection surface 6, and the silicon source injected from the injection hole 7 The gas will flow diagonally downward on the rear flange 1 1b side. The direction in which the silicon source gas is ejected is at the position where the wafer held by the robot hand 9 is positioned. Therefore, during the epitaxial growth process, the silicon source gas is ejected onto the surface of the loaded wafer. It is supposed to be.

In addition, in the epitaxial growth reactor 1, a plurality of infrared lamps 3 are arranged above and below the reaction chamber 122, and the inside of the reaction chamber 122 is heated by the infrared lamp 3. I have.

A process for growing an epitaxial film on the surface of a semiconductor wafer using the epitaxial growth reactor 1 configured as described above will be described below. First, a plurality of semiconductor wafers that have undergone a wafer preparation process including removal of a surface oxide film, cleaning and drying beforehand are placed in a multi-stage carrier 15 under room temperature conditions inside an epitaxy growth furnace 1 and a clean chamber 1 outside. Each shelf 16 stores one after another. The multi-stage carrier 15 is then attached to the end of the elevator shaft 17 in the mouth chamber 12, and a shelf that stores wafers to be processed by the lifting and lowering operation of the elevator shaft 17. 16 is lifted to the position level facing the opening.

Next, hydrogen gas is introduced from the injector port 4 of the epitaxial growth reactor 1 to form a hydrogen gas flow at a constant flow rate in the reaction chamber 122. Thereafter, in this state, a fixed amount of silicon source gas is supplied from the injection nozzle 5 into the reaction chamber 122. When the supply of the silicon source gas is continued, the silicon source gas spouted obliquely downward from this silicon gas supply position, that is, from the installation position of the injection nozzle 5 to the rear flange 11 b side downstream of the hydrogen gas flow is generated. Reacted gas is generated while flowing downstream while being dispersed in the stream. If the introduction of the hydrogen gas flow and the silicon source gas is maintained at a constant flow rate, the reaction gas atmosphere on the downstream side becomes uniform, and a reaction gas atmosphere space 10 that maintains a stable state is formed on the downstream side. In contrast, the front flange 11a side from the silicon source gas supply position, that is, the upstream side of the hydrogen gas flow, is a hydrogen gas atmosphere space (reference gas atmosphere space) 20 consisting of only hydrogen gas. At the same time, the inside of the reaction chamber 122 reaches a residual heat temperature of about 700 to 800 by heating from the infrared lamp 3.

When the uniform and stable hydrogen gas atmosphere space 20 and the reaction gas atmosphere space 10 are thus formed in the reaction chamber 122, the gate 12 of the growth furnace is opened while maintaining this state. Then, the hand 9 enters the mouth and drop chamber 12 through the opening by the robot arm 8, and the wafer on the pre-selected shelf 16 facing the opening is held by the hand 9. The wafer is transferred to the hydrogen gas atmosphere space 20 in the reaction chamber 22 by the robot arm 8 while being held by the hand 9. Gate 1 2 is then closed and reaction chamber 1 2 2 Sealed. Incidentally, the multi-stage carrier 15 is not moved until the wafer is subjected to the epitaxy growth processing as described later and returned to the same original shelf 16.

Next, the inside of the reaction chamber 122 is gradually heated by the infrared lamp 3 to an epitaxy reaction temperature, for example, 900 to 2200. The wafer waits while being held by the robot hand 9 in the hydrogen gas atmosphere space 20 upstream until the inside of the reaction chamber 122 reaches the epitaxial growth temperature. When the inside of the reaction chamber 122 reaches the epitaxy growth temperature, it is immediately transferred by the robot arm 8 to the loading position downstream of the reaction chamber 122. At this mouthing position, a reaction gas atmosphere space 10 is previously formed by the silicon source gas injected from the injection nozzle 5, and is conveyed to the loading position. The epitaxy film grows immediately on the surface of the wafer heated to a high temperature by reduction or thermal decomposition, and the epitaxy growth process starts. In addition, the reaction gas atmosphere is previously maintained in a uniform and stable state, and the wafer is suddenly exposed to such a reaction gas atmosphere. Therefore, the wafer surface is exposed from the beginning of the epitaxial growth process. The epitaxial film grows uniformly in a uniform state. Further, in the present embodiment, the transfer of the wafer W to the reaction gas atmosphere space 10 is the start of the epitaxial growth process, so that the start time of the growth process can be clearly determined, and the time in the epitaxial growth process There is an advantage that control can be easily performed. When the epitaxial film has grown to the target thickness on the wafer surface, the wafer is transported to the upstream hydrogen gas atmosphere space 20 by the robot arm 8. This ends the epitaxial growth process. Then, the temperature inside the reaction chamber 122 is gradually lowered, and when the temperature is lowered to a sufficiently stable temperature, for example, near room temperature, the gate 122 is opened. Next, the wafer that has been epitaxially grown is

While the (epitaxial wafer) is held by the hand 9, it is returned to the original shelf 16 which is the starting position in the load lock chamber 12 via the gate 12 opened from the reaction chamber 22. Next, the wafers accommodated in the other shelves 16 of the multi-stage cassette are similarly transported to the hydrogen gas atmosphere space 20 and heated, and transported to the reaction gas atmosphere space 10. The process is started in order, starting the process, terminating the epitaxy growth process by transporting to the hydrogen gas atmosphere space 20, lowering the temperature in the reaction chamber 122, and storing it in the multi-stage cassette. According to the epitaxy growth reactor 1 of this embodiment, it is not necessary to readjust the reaction gas atmosphere every time a new epitaxy growth process is started for a new epitaxy. Continuous epitaxial growth processing can be performed on the wafer.

In this way, when the epitaxy growth process is performed on the wafers on each shelf 16 and all the wafers on the multiple shelves 16 of the multi-stage carrier 15 become epitaxy wafers, the multi-stage carrier 15 becomes an overnight. It is removed from the shaft 17 and transported to the next process, for example, the inspection process.

Claims

The scope of the claims

1. A cylindrical chamber part,

Gas flow forming means for generating a gas flow in a specific direction of the reference gas not containing the material gas in a part of the chamber;

Material gas supply means for supplying the material gas into the gas flow at an intermediate position of the gas flow in the chamber part;

An epitaxy growth furnace, wherein an epitaxy film is grown on a surface of a semiconductor wafer substrate while holding the wafer in a reaction gas atmosphere space formed downstream of the material gas supply position of the gas flow. .

2. The epitaxy growth furnace according to claim 1, wherein the injection nozzle ejects a material gas in a direction intersecting a flow direction of the gas flow.

3. The injection nozzle injects the material gas toward a semiconductor wafer substrate held on a downstream side in a flow direction of the gas flow when an epitaxy growth process is performed. 3. The epitaxy growth reactor according to 2.

4. In the epitaxial growth furnace, the injection nozzle has an injection surface facing the wafer substrate held downstream in the flow direction of the gas flow during execution of the epitaxial growth process, and the injection surface is The material gas is substantially equal to the outer shape of the surface of the semiconductor wafer substrate, and the material gas is injected from a plurality of injection holes provided on the injection surface. The epitaxy growth reactor described.

5. The epitaxy according to claim 4, wherein the injection holes provided in the injection surface eject the material gas obliquely downward so as to be directed to the direction of the gas flow. Growth reactor.

6. The epitaxy growth furnace according to claim 4, wherein the injection holes provided in the injection surface are uniformly distributed over substantially the entire injection surface.