KR20240069619A - Hybrid depositing apparatus for gallium oxide and method for hyprid depositing using thereof - Google Patents

Abstract

The present invention relates to a hybrid deposition device for gallium oxide. The hybrid deposition device for gallium oxide according to the disclosed embodiment of the present invention includes a gas supply assembly for supplying a source gas, a reaction gas, and a purge gas, and at least some of the source gas. It includes a liquid supply assembly, a chamber unit connected to the gas supply assembly and the liquid supply assembly, and a substrate disposed therein.

Description

Hybrid deposition apparatus for gallium oxide and hybrid deposition method using the same {HYBRID DEPOSITING APPARATUS FOR GALLIUM OXIDE AND METHOD FOR HYPRID DEPOSITING USING THEREOF}

The present invention relates to a hybrid deposition apparatus for gallium oxide and a hybrid deposition method using the same. More specifically, the present invention relates to a hybrid deposition apparatus for gallium oxide to which at least two deposition methods are applied and a hybrid deposition method using the same.

As electronic products used in real life become increasingly sophisticated, the performance and number of semiconductors required to operate the electronic products are increasing. Meanwhile, with the development of electric vehicle (EV) driving systems, high voltage systems are required, and power semiconductors with high band gaps are required.

Therefore, silicon (Si) was used as a wafer to produce conventional semiconductors, but silicon (Si) had a low bandgap and limited high voltage implementation. To solve this problem, there are various attempts to manufacture semiconductor wafers using next-generation materials such as silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga2O3).

Generally, methods for depositing a thin film of a predetermined thickness on a substrate such as a semiconductor substrate or glass include physical vapor deposition (PVD) using physical collisions such as sputtering, and chemical methods using chemical reactions. There is a chemical vapor deposition (CVD) method, etc. Among chemical vapor deposition methods, Metal-Organic Chemical Vapor Deposition (MOCVD) is a method of forming a thin film by flowing an organic metal complex gas onto a substrate and causing a decomposition reaction on the surface of the substrate, while Mist-CVD is a method of forming a thin film in an aqueous solution at normal pressure. This is a method of spraying and depositing a thin film through a chemical reaction with the substrate. Recently, atomic layer deposition (ALD), which can form fine patterned thin films of semiconductor devices, is also being considered as an effective deposition method.

However, each deposition method has advantages and disadvantages, and when a single deposition method is used, that deposition method also has disadvantages. For example, the Mist-CVD method has problems in that it is difficult to control the growth rate of crystals (thin films) growing on a substrate and has low uniformity. The ALD method has excellent thin film characteristics, but has the disadvantage of a slow crystal growth rate, and the MOCVD method has a problem of low thin film characteristics although the crystal growth rate is fast.

In addition, each of the deposition methods used to deposit thin films has different deposition conditions for stable deposition of the source gas or source liquid on the substrate, making it impossible to properly utilize various deposition methods with existing deposition equipment. There was a problem.

There is a demand for the development of a deposition device and a deposition method using the same to solve the problems of each of the above deposition methods.

Korean Patent Publication No. 10-2016-0131442 (2016.11.16)

In order to solve the above-described problems, the present invention provides a hybrid deposition apparatus for gallium oxide that produces a wafer by forming a crystal layer using at least two deposition methods and a hybrid deposition method using the same.

A hybrid deposition device for gallium oxide according to the disclosed embodiment of the present invention includes a gas supply assembly for supplying a source gas, a reaction gas, and a purge gas, a liquid supply assembly for supplying at least a portion of the source gas, and the gas supply assembly and the It is connected to a liquid supply assembly and includes a chamber unit in which a substrate is placed.

In addition, the gas supply assembly includes a source gas supply module for supplying the source gas, a reaction gas supply module for supplying the reaction gas, a purge gas supply module for supplying the purge gas, and a main pumping module for providing negative pressure. can do.

Additionally, the source gas supply module includes a first source gas supply unit supplying a first source gas, and a second source gas supply unit supplying a second source gas different from the first source gas. At least one of the first source gas and the second source gas may include trimethyl gallium (TMG).

Additionally, the reaction gas supply module is arranged to be connected to the purge gas supply module, and the reaction gas supply module can receive oxygen (O2) from the outside to generate ozone (O3) and supply it to the chamber unit.

Additionally, the reaction gas supply module may adjust the ratio of gallium supplied from the source gas supply module and the liquid supply assembly to the ozone supplied to the chamber unit.

Additionally, the liquid supply assembly may include a source liquid supply unit that supplies the source liquid, and an evaporation unit that atomizes the source liquid.

In addition, the gas supply assembly and the liquid supply assembly are coupled to the upper side of the chamber unit, and the source gas, reaction gas, purge gas supplied from the gas supply assembly, or the source liquid supplied from the liquid supply assembly is connected to the chamber unit. It may be sprayed vertically toward one surface of the substrate disposed inside.

In addition, a device formed inside the chamber unit and connected to the gas supply assembly and the liquid supply assembly to spray at least one of the source gas, the reaction gas, the purge gas, and the source liquid on one surface of the substrate. It may include a spray unit including a plurality of spray nozzles.

Additionally, the hybrid deposition apparatus according to the disclosed embodiment of the present invention may further include a substrate adjustment unit that supports a lower portion of the substrate and rotates the substrate in one direction.

In addition, the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention may further include a heating unit formed below the substrate adjustment unit and controlling the temperature inside the substrate and the chamber unit.

Additionally, the substrate adjustment unit may adjust the position of the substrate within the chamber unit by lifting the substrate.

Additionally, the substrate handling unit prepares the substrate in a first state to deposit a first layer on the substrate by a first deposition method, and the substrate handling unit lifts the substrate and moves it to a first height. , the heating unit heats the substrate to a first temperature range, the first deposition method includes an atomic layer deposition method, and the first layer may be an amorphous buffer layer.

Additionally, the substrate handling unit prepares the substrate in a second state to deposit a second layer on the first layer by a second deposition method, and the substrate handling unit lowers the substrate to prepare the substrate. 2 height, the heating unit heats the substrate to a second temperature range, the second deposition method includes an organic metal chemical vapor deposition method, the second layer is a single crystal layer, and the second height is It may be formed to be larger than the first height, and the second temperature range may be formed to be higher than the first temperature range.

In addition, the gas supply assembly and the liquid supply assembly operate selectively through at least two of atomic layer deposition (ALD), metal organic chemical vapor deposition (MOCVD), and mist chemical vapor deposition (Mist-CVD). Multiple layers can be grown on the substrate.

Meanwhile, the hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention is performed by any one of the substrate preparation step of placing the substrate to be grown inside the chamber unit, the gas supply assembly, and the liquid supply assembly. A first layer deposition step of depositing a first layer on a substrate, and a second layer deposition step of depositing a second layer on the first layer by either the gas supply assembly or the liquid supply assembly; , the first layer and the second layer may be deposited through different deposition methods.

In addition, the first layer deposition step is performed using atomic layer deposition (ALD), which is a first deposition method, and the second layer deposition step is performed using metal organic chemical vapor deposition (MOCVD) and mist chemical vapor deposition, which are second deposition methods. It can be performed by any one of the deposition methods (Mist-CVD).

In addition, in the hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention, before the first layer deposition step, the substrate is adjusted to the optimal conditions of the first deposition method by a substrate adjustment unit. A first layer deposition preparation step of preparing the substrate in state 1, and a second layer deposition of preparing the substrate in a second state, which is the optimal condition for the second deposition method, by the substrate adjustment unit before the second layer deposition step. Additional preparation steps may be included.

Additionally, the first state includes at least one of a first height and a first temperature range, the second state includes at least one of a second height and a second temperature range, and the second height is the first height. It can be formed larger, and the second temperature range can be formed higher than the first temperature range.

In addition, it may further include a third layer deposition step of depositing a third layer on the second layer by the liquid supply assembly, and the third layer deposition step may be performed by a mist chemical vapor deposition method.

According to the disclosed embodiment of the present invention, gallium oxide thin film crystals can be grown and deposited on the substrate 900, so that an integrated high-voltage, high-output semiconductor with a high bandgap compared to existing silicon semiconductors can be manufactured. There is an advantage.

In addition, there is an advantage in manufacturing a semiconductor that meets the required specifications by using a gallium oxide hybrid deposition device and hybrid deposition method that can apply various deposition methods when manufacturing a semiconductor using gallium oxide as a material.

In addition, by using a hybrid deposition device and hybrid deposition method for gallium oxide that can apply various deposition methods, there is an advantage of being able to compensate for the shortcomings of each deposition method.

In addition, by allowing the state of the substrate to be changed in one hybrid deposition device and hybrid deposition method for gallium oxide so that various deposition methods can be applied, multiple deposition methods can be used in one autonomy, and each deposition method There is an advantage in that layers can be stably deposited and grown on a substrate under optimal conditions.

1 is a schematic perspective view of a hybrid deposition apparatus for gallium oxide according to a disclosed embodiment of the present invention.
Figure 2 is a conceptual diagram of a hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention.
FIG. 3 is a schematic diagram illustrating an injection unit that is a component of a hybrid deposition apparatus for gallium oxide according to an exemplary embodiment of the present invention.
Figure 4 shows various examples of gallium oxide thin films grown using a hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention.
Figure 5 is a schematic flowchart of a hybrid deposition method using a hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention.
Figure 6 is a conceptual diagram of a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.
FIG. 7 is for explaining a process of preparing a substrate in a first state to deposit a first layer by a first deposition method in a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.
Figure 8 is for explaining a process of preparing a substrate in a second state to deposit a second layer by a second deposition method in a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.
Figure 9 is a schematic flowchart of a hybrid deposition method using a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and are within the scope of common knowledge in the technical field to which the present invention pertains. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

Although first, second, etc. are used to describe various components, these components are of course not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be a second component within the technical spirit of the present invention.

Like reference numerals refer to like elements throughout the specification.

Each feature of the various embodiments of the present invention can be partially or fully combined or combined with each other, and as can be fully understood by those skilled in the art, various technical interconnections and operations are possible, and each embodiment may be implemented independently of each other. It may be possible to conduct them together due to a related relationship.

Meanwhile, potential effects that can be expected from technical features of the present invention that are not specifically mentioned in the specification of the present invention are treated as if described in the specification, and this embodiment is intended for those with average knowledge in the art. Since it is provided to more completely explain the present invention, the content shown in the drawings may be exaggerated compared to the actual implementation of the invention, and the detailed description of the configuration that is judged to unnecessarily obscure the gist of the present invention is not provided. Omit or describe briefly.

Hereinafter, the disclosed embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic perspective view of a hybrid deposition apparatus 1 for gallium oxide according to a disclosed embodiment of the present invention, and FIG. 2 is a conceptual diagram of a hybrid deposition apparatus 1 for gallium oxide according to a disclosed embodiment of the present invention.

Referring to FIG. 1, the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention includes a gas supply assembly 100, a liquid supply assembly 200, and a chamber unit 300. The gas supply assembly 100 can supply various types of gas to the chamber unit 300. Illustratively, the gas supply assembly 100 may supply source gas for growing crystals on the substrate 900. Additionally, the gas supply assembly 100 may supply a reaction gas to react with the source gas supplied to grow crystals on the substrate 900. Additionally, the gas supply assembly 100 may supply a purge gas to prevent unintentional diffusion of the source gas inside the chamber unit 300.

Below, the gas supply assembly 100 will be described in more detail. The gas supply assembly 100 may include a source gas supply module 110 for supplying source gas, a reaction gas supply module 120 for supplying a reaction gas, and a purge gas supply module 130 for supplying a purge gas. You can. The source gas supply module 110 may supply the source gases (S1, S2, S3, and S4) stored in the source gas supply unit 111 to the chamber unit 300 through the source gas supply line 112.

The source gas supply module 110 may supply at least one source gas (S1, S2, S3, S4) to the chamber unit 300. That is, the source gas supply module 110 may include at least one source gas supply unit 111, and the source gas supply module 110 is a first source gas supply unit that supplies the first source gas (S1). It may include (1111) and a second source gas supply unit 1112 that supplies the second source gas (S2). The second source gas (S2) may be a different material from the first source gas (S1). Illustratively, at least one of the first source gas (S1) and the second source gas (S2) may include trimethyl gallium (TMG). Since at least one of the various source gases (S1, S2, S3, and S4) contains a material containing gallium (Ga), a gallium oxide (Ga2O3) crystal can be deposited on the substrate 900.

For example, the source gas supply module 110 includes a first source gas supply unit 1111, a second source gas supply unit 1112, a third source gas supply unit 1113, and a fourth source gas supply unit ( 1114). At this time, the first source gas (S1) supplied to the chamber unit 300 by the first source gas supply unit 1111 may be trimethyl gallium (TMG), and the first source gas (S1) supplied to the chamber unit 300 by the second source gas supply unit 1112 The second source gas (S2) supplied to the chamber unit 300 may be trimethyl aluminum (TMA). When the second source gas (S2) is trimethyl aluminum (TMA), the lattice mismatch (layer mismatch) state can be resolved by depositing multiple layers of aluminum gallium oxide (AlGaOx) with different textures.

In addition, the third source gas (S3) supplied to the chamber unit 300 by the third source gas supply unit 1113 may be DTMASn or BTBAS, and is supplied to the chamber unit (300) by the fourth source gas supply unit 1114. The fourth source gas S4 supplied to 300) may be an additional material needed to manufacture a semiconductor wafer. In this way, by providing various source gases (S1, S2, S3, and S4) by the source gas supply unit 111, the process of growing a thin film crystal on the substrate 900 can be optimized.

The reaction gas supply module 120 may supply reaction gas (R) to the chamber unit 300. For example, the reaction gas (R) may be ozone (O3), and the reaction gas supply unit 121 of the reaction gas supply module 120 receives oxygen (O2) from the outside and generates ozone (O3). It can be supplied to the chamber unit 300. Ozone (O3) supplied by the reaction gas supply module 120 reacts with gallium (Ga) supplied by the source gas supply module 110 and/or the liquid supply assembly 200, and gallium (Ga) and ozone Gallium oxide (Ga2O3) generated through a chemical reaction of (O3) may be deposited on the substrate 900.

Meanwhile, in order to generate the required amount of gallium oxide (Ga2O3), the supply ratio of gallium (Ga) and ozone (O3) must be adjusted. Accordingly, the reaction gas supply module 120 can adjust the ratio of gallium supplied from the source gas supply module 110 to the ozone supplied to the chamber unit 300. The ratio of gallium to ozone may be determined by the degree to which the reaction gas supply control valve (not shown) formed between the reaction gas supply unit 121 and the reaction gas supply line 122 is opened and closed. By adjusting the ratio of supplied gallium (Ga) to ozone (O3) supplied in this way, there is an advantage that gallium oxide (Ga2O3) can be completely reacted while minimizing remaining gallium (Ga) or ozone (O3). .

The purge gas supply module 130 may supply purge gas (P) to the chamber unit 300. The purge gas (P) may be an inert gas such as nitrogen (N2) and/or argon (Ar). The purge gas supply module 130 includes a purge gas supply unit 131 that stores and/or supplies purge gas (P), and a purge gas supply line 132 that delivers the purge gas (P) to the chamber unit 300. ) may include. At this time, the purge gas supply line 132 may be connected to at least one of the source gas supply line 112, the reaction gas supply line 122, and the source liquid supply line 211 of the liquid supply assembly 200, which will be described later. The source gas supply line 112, the reaction gas supply line 122, the source liquid supply line 211, and the source gases (S1, S2, S3, S4) remaining inside the chamber unit 300 are atomized. The source liquid (L1) and the reaction gas (R) may be discharged to the outside of the chamber unit 300.

Illustratively, the first purge gas supply line 1321 of the purge gas supply lines 132 may be connected to the reaction gas supply line 122. More specifically, the reaction gas supply line 122 of the reaction gas supply module 120 may be arranged to be connected to the first purge gas supply line 1321 among the purge gas supply lines 132. According to this structure, the reaction gas (R) is not mixed with the source gas (S1, S2, S3, S4) before being injected into the interior of the chamber unit 300 from the injection unit 400, which will be described later, so the source gas There is an advantage in that stable chemical reaction between (S1, S2, S3, S4) and reaction gas (R) and deposition on the substrate 900 are possible.

As another example, the second purge gas supply line 1322 of the purge gas supply lines 132 may be connected to the source gas supply line 112. More specifically, the second purge gas supply line 1322 includes the first source gas supply line 1121, the second source gas supply line 1122, the third source gas supply line 1123, and the fourth source gas supply line. It may be connected to at least one of the supply lines 1124. In this way, by connecting the source gas supply line 112 and the second purge gas supply line 1322, the purge gas (P) is supplied to the source gas supply line 112 and the source gas remaining inside the chamber unit 300 ( There is an advantage in that S1, S2, S3, and S4) can be discharged to the outside of the chamber unit 300 and enable stable deposition and thin film crystal growth.

As another example, the second purge gas supply line 1322 of the purge gas supply lines 132 may be connected to the source liquid supply line 211. At this time, the second purge gas supply line 1322 may be connected to the source liquid supply line 211 disposed between the front end of the source liquid supply unit 210 and the evaporation unit 220, which will be described later, and the evaporation unit 220 ) may be connected to the atomized source liquid supply line 211 disposed between the rear end of the chamber unit 300 and the chamber unit 300. In this way, by connecting the source liquid supply line 211 and the second purge gas supply line 1322, the purge gas (P) is supplied to the source liquid supply line 211 and the source liquid remaining inside the chamber unit 300 ( L1), and/or the atomized source liquid L1 can be discharged to the outside of the chamber unit 300, which has the advantage of enabling stable deposition and thin film crystal growth.

Below, the liquid supply assembly 200 will be described.

The hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention may include a liquid supply assembly 200, and the liquid supply assembly 200 is supplied with at least one of the source gases S1, S2, S3, and S4. Some can be supplied. At this time, the liquid supply assembly 200 may vaporize the source liquid L1 to generate mist-type source gases S1, S2, S3, and S4 and supply them to the chamber unit 300.

The liquid supply assembly 200 may include a source liquid supply unit 210 that supplies the source liquid (L1) and an evaporation unit 220 that atomizes the source liquid (L1). The source liquid supply unit 210 may store and/or supply source liquid L1 that shares a predetermined substance with at least one of the source gases S1, S2, S3, and S4. For example, the source liquid (L1) may be Ga(acac)3 containing gallium (Ga), and the source liquid (L1) is atomized by the evaporation unit 220 and stored inside the chamber unit 300. Ga) can be supplied. The evaporation unit 220 may be a device capable of generating ultrasonic vibration, and may receive the source liquid L1 from the source liquid supply unit 210 and atomize the source liquid L1 into a mist form. The atomized source liquid L1 may be supplied into the chamber unit 300 through the source liquid supply line 211 connected to the chamber unit 300 at the rear end of the evaporation unit 220.

Meanwhile, the source liquid L1 atomized in the form of a mist may react with the reaction gas R to form gallium oxide (Ga2O3) crystals on the substrate 900. At this time, to minimize the remaining amounts of the source liquid (L1) and the reaction gas (R), the reaction gas supply module 120 and/or the liquid supply assembly 200 each supply the reaction gas (R) and the atomized source liquid (L1). ) can be adjusted to adjust the ratio of gallium (Ga) supplied by the liquid supply assembly 200 to ozone (O3) supplied by the reaction gas supply module 120.

Hereinafter, the chamber unit 300 and the configurations of the hybrid deposition apparatus 1 disposed inside the chamber unit 300, and the source gas (S1, S2, S3, S4), reaction gas (R), and purge gas. (P), and the main pumping module 140 that discharges the source liquid (S1) will be described.

Figure 3 is a schematic diagram for explaining the injection unit 400, which is a component of the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention.

Referring to FIGS. 2 and 3 , the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention may include a chamber unit 300. A substrate 900 may be placed inside the chamber unit 300. At least one layer is deposited on the substrate 900 to grow a thin film crystal, and a power semiconductor device can be manufactured using the thin film crystal.

The hybrid deposition apparatus 1 according to the disclosed embodiment of the present invention may be operated at atmospheric pressure with the chamber region 300 filled with an inert gas for stable crystal growth on the substrate 900. However, the configuration in which the operating pressure of the chamber region 300 of the hybrid deposition apparatus 1 is normal pressure is only an exemplary configuration, and a configuration in which the chamber region 180 is in a vacuum state or a low pressure state may also be included in the spirit of the present invention. there is.

The chamber unit 300 may be connected to the gas supply assembly 100 and the liquid supply assembly 200. More specifically, the chamber unit 300 is connected to the gas supply assembly 100 to supply source gas (S1, S2, S3, S4), reaction gas (R), and purge gas (P) simultaneously or sequentially. It can be supplied and connected to the liquid supply assembly 200 to receive atomized source liquid (L1). A product (e.g. For example, Ga2O3 or AlGaOx to resolve lattice mismatch) may be deposited to a preset thickness.

At this time, the gas supply assembly 100 and the liquid supply assembly 200 may be coupled to the upper side of the chamber unit 300. More specifically, among the gas supply assembly 100, the source gas supply line 112, the purge gas supply line 132 connected to the reaction gas supply line 122, and the source liquid supply line 211 are connected to the chamber unit ( 300). Accordingly, the source gas (S1, S2, S3, S4), reaction gas (R), purge gas (P) supplied from the gas supply assembly 100, or the source liquid (L1) supplied from the liquid supply assembly 200 ) may be sprayed vertically toward one surface (eg, top surface) of the substrate 900 disposed inside the chamber unit 300.

When deposition was performed using a conventional mist chemical vapor deposition (Mist-CVD) method, a thin film was deposited by flowing mist from one side of the upper surface of the substrate 900 to the other side. However, when this method is used, a problem arises in which the mist flowing on the upper surface of the substrate 900 is not deposited at a uniform height, which may cause defects in the manufactured wafer and the semiconductor produced accordingly. In order to solve this problem, the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention vertically sprays the gas and/or liquid required to form a thin film crystal onto the upper surface of the substrate 900. , it has the advantage of enabling uniform thin film crystal growth.

In addition, in order to uniformly spray gas and/or liquid onto the substrate 900, the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention includes a spray unit formed inside the chamber unit 300. It may further include (400). The injection unit 400 may include a plurality of fine injection nozzles 410. The injection unit 400 is connected to the supply lines (e.g., source gas supply line and/or source liquid supply line) of the gas supply assembly 100 and the liquid supply assembly 200 and is connected to the inside of the chamber unit 300. At least one of the source gas (S1, S2, S3, S4), reaction gas (R), purge gas (P), and (atomized) source liquid (L1) can be sprayed, and a plurality of spray nozzles 410 ) may be arranged to cover the top surface area of the substrate 900. In another embodiment, the plurality of injection nozzles 410 are arranged to cover the entire cross-sectional area of the chamber unit 300, but operate only in an area corresponding to the area of the substrate 900 disposed inside the chamber unit 300. It can also be controlled as much as possible.

In some cases, each of the plurality of injection nozzles 410 included in the injection unit 400 may operate selectively when the substrate 900 moves in parallel within the chamber unit 300. Although not shown in detail in the drawings of the present invention, the substrate 900 can move horizontally within the chamber unit 300. When the substrate 900 moves horizontally within the chamber unit 300, the spray nozzles 410 may spray gas and/or liquid depending on the position of the substrate 900. Accordingly, time-division deposition and/or space-division deposition can be performed, and there is an advantage in enabling uniform and stable thin film crystal deposition.

The hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention may include a substrate conditioning unit 600. The substrate adjustment unit 600 supports the lower portion of the substrate 900 and can rotate the substrate 900 in one direction. Illustratively, the substrate adjustment unit 600 may rotate the susceptor 500 disposed below the substrate 900, and the substrate 900 seated on the susceptor 500 may be rotated by the susceptor 500. can be rotated with Since the substrate 900 can be rotated by the substrate adjustment unit 600, there is an advantage in that more uniform thin film deposition is possible.

In addition, the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention may further include a heating unit 700. By way of example, the heating unit 700 may control the temperature inside the substrate 900 and the chamber unit 300, and may be formed below the substrate adjustment unit 600. As another example, the heating unit 700 may be formed below the susceptor 500 to heat or cool the susceptor 500 and the substrate 900 to reach the target temperature. For example, the heating unit 700 can be heated up to 1,000°C to 1,200°C and transfer heat energy to the substrate 900 and the chamber unit 300. The heating unit 700 has the advantage of enabling easy deposition of a layer (epilayer) in a high temperature environment.

Additionally, the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention may include a main pumping module 140. The main pumping module 140 provides negative pressure to pump the source gas (S1, S2, S3, S4), reaction gas (R), purge gas (P), and (atomized) source liquid remaining inside the chamber unit 300. (L1) can be discharged to the outside. Illustratively, the main pumping module 140 includes a main pump 141, and the main pump 141 provides negative pressure to form a fluid flow from the chamber unit 300 toward the discharge line 142. A pressure difference can be created. Accordingly, the gas and/or liquid remaining inside the chamber unit 300 can be easily discharged through the discharge line 142, and there is an advantage in that stable and precise thin film crystal deposition is possible.

Hereinafter, a gallium oxide thin film deposited using the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention will be described.

Figure 4 shows various examples of gallium oxide thin films grown using the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention.

2 and 4, the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention grows a plurality of thin film crystal layers on the substrate 900 using at least two deposition methods. You can. Illustratively, the gas supply assembly 100 and the liquid supply assembly 200 of the hybrid deposition apparatus 1 for gallium oxide operate selectively to perform atomic layer deposition (ALD), metal organic chemical vapor deposition (MOCVD), A plurality of layers can be grown on the substrate 900 through at least two of the following methods: and mist chemical vapor deposition (Mist-CVD).

First, the substrate 900 is placed inside the chamber unit 300. Illustratively, the substrate 900 may be an n-type β-gallium oxide (β-Ga2O3) substrate, a silicon substrate, or a silicon carbide substrate. As another example, the substrate 900 may be a sapphire substrate made of aluminum oxide (Al2O3). When using a sapphire substrate made of aluminum oxide (Al2O3), layer mismatch may occur between thin film crystal layers, but the mismatch problem can be solved by forming a superlattice using trimethyl aluminum (TMA) as described above. You can.

Afterwards, the first layer 910 may be deposited on the substrate 900. For example, the first layer 910 may be a β-gallium oxide (β-Ga2O3) layer, and the first layer 910 may be deposited using atomic layer deposition (ALD). When depositing the first layer 910 using atomic layer deposition (ALD), the atomic layer deposited first layer 910A has a thickness of about 10 nm to 30 nm and is deposited at a temperature range of 100°C to 350°C. can be formed. When depositing the first layer 910 using atomic layer deposition (ALD), the source gas supply module 110, the reaction gas supply module 120, and the purge gas supply module ( 130) can operate simultaneously or sequentially, and one atomic layer can be deposited per cycle. Accordingly, a precise thin film layer layer of thin thickness can be formed.

As another example, the first layer 910 may be a β-gallium oxide (β-Ga2O3) layer, and the first layer 910 may be deposited using a mist chemical vapor deposition (Mist-CVD) method. When depositing the first layer 910 using mist chemical vapor deposition (Mist-CVD), the mist chemical vapor deposition first layer 910C has a thickness of about 5 μm to 12 μm and is heated at 600°C to 1,000°C. It can be formed in a temperature range of When depositing the first layer 910 using mist chemical vapor deposition (Mist-CVD), the source liquid L1 atomized by the evaporation unit 220 of the liquid supply assembly 200 is deposited in the chamber unit 300. ) can be supplied inside, and a thin film layer can be formed. If necessary, the reaction gas supply module 120 of the gas supply assembly 100 may operate together to adjust the Ga/O ratio to generate gallium oxide (Ga2O3).

Thereafter, the second layer 920 may be deposited on the first layer 910. Exemplarily, the second layer 920 may be a β-gallium oxide (β-Ga2O3) layer, and the second layer 920 is deposited using a method different from the method used to deposit the first layer 910. It can be. Illustratively, when the first layer 910 is deposited on the substrate 900 using atomic layer deposition (ALD), the second layer 920 is deposited on the substrate 900 using metal organic chemical vapor deposition (MOCVD), and mist It may be deposited using either chemical vapor deposition (Mist-CVD). When depositing the second layer 920 using metalorganic chemical vapor deposition (MOCVD), the organic metal chemical vapor deposition second layer 920B has a thickness of about 1 μm to 3 μm and is deposited at a temperature of 400° C. to 1,000° C. It can be formed in a range. As another example, when the second layer 920 is deposited using metal-organic chemical vapor deposition (MOCVD), the organic-metal chemical vapor-deposited second layer 920B has a thickness of about 5 μm to 12 μm and is heated at 400 ° C. It can be formed in a temperature range of 1,000°C. When depositing the second layer 920 using metal organic chemical vapor deposition (MOCVD), the source gases (S1, S2, S3, The reaction gas (R) supplied by S4) and the reaction gas supply module 120 may be supplied into the mixing and chamber unit 300, and a thin film layer may be formed.

As another example, when the second layer 920 is deposited using mist chemical vapor deposition (Mist-CVD), the mist chemical vapor deposition second layer 920C has a thickness of about 5 μm to 12 μm. It can be formed in a temperature range of 600°C to 1,000°C.

As another example, if the first layer 910 is deposited using a mist chemical vapor deposition method, the second layer 920 may be deposited using an atomic layer deposition method. The atomic layer deposited second layer 920A may be formed to a thickness of approximately 10 nm to 30 nm at a temperature range of 100°C to 350°C.

Afterwards, a third layer 930 may be additionally deposited on the second layer 920. By way of example, the third layer 930 may be a β-gallium oxide (β-Ga2O3) layer, and the third layer 930 may be formed by the method used when depositing the first layer 910 and the second layer 920. It may be deposited using a different method. Illustratively, the first layer 910 is deposited on the substrate 900 using atomic layer deposition (ALD), and the second layer 920 is deposited using metal organic chemical vapor deposition (MOCVD). When deposited on the first layer 910, the third layer 930 may be deposited using mist chemical vapor deposition (Mist-CVD). When depositing the third layer 930 using mist chemical vapor deposition (Mist-CVD), the mist chemical vapor deposition third layer 930C has a thickness of about 3 μm to 10 μm and is heated at 600°C to 1,000°C. It can be formed in a temperature range of

As described above, in various forms in which gallium oxide thin films are deposited, the layer using the atomic layer deposition method is expressed as A, the layer using the organic metal chemical vapor deposition method is expressed as B, and the layer using the mist chemical vapor deposition method is expressed as C. , an embodiment in which A layer - B layer - C layer are deposited on the substrate 900 (FIG. 4(a)), an embodiment in which A layer - C layer is deposited on the substrate 900 (FIG. 4(b)) ), an embodiment in which the A layer-B layer is deposited on the substrate 900 (FIG. 4(c)), and an embodiment in which the C layer-A layer is deposited on the substrate 900 (FIG. 4(d)) is possible. However, the embodiments shown in FIG. 4 are exemplary, and a thin film deposition structure with more layers deposited and a deposition order different from the disclosed deposition order is also possible as needed.

As described above, by using the hybrid deposition device 1 for gallium oxide according to the disclosed embodiment of the present invention, which can grow and deposit gallium oxide thin film crystals on the substrate 900, high deposition rate compared to existing silicon semiconductors There is an advantage in being able to manufacture integrated high-voltage, high-output semiconductors with a band gap.

In addition, there is an advantage in manufacturing a semiconductor that meets the required specifications by using a gallium oxide hybrid deposition apparatus 1 that can apply various deposition methods when manufacturing a semiconductor using gallium oxide.

In addition, by using the hybrid deposition apparatus 1 for gallium oxide that can apply various deposition methods, there is an advantage of being able to compensate for the shortcomings of each deposition method.

Hereinafter, a hybrid deposition method according to the disclosed embodiment of the present invention using the above-described hybrid deposition apparatus for gallium oxide will be described. In describing the hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention, content that overlaps with the hybrid deposition apparatus for gallium oxide described above will be briefly mentioned or omitted from description.

Figure 4 shows various examples of gallium oxide thin films grown using a hybrid deposition apparatus for gallium oxide according to an embodiment of the present invention, and Figure 5 shows a hybrid film grown using a hybrid deposition apparatus for gallium oxide according to an embodiment of the present invention. This is a schematic flowchart of the deposition method.

1 to 5, the hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention includes a substrate preparation step (S110), a first layer deposition step (S120), and a second layer deposition step. (S130) may be included.

In the hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention, the substrate preparation step (S110) may mean placing the substrate on which the thin film crystal will be grown inside the chamber unit. The substrate may be at least one of an n-type β-gallium oxide (β-Ga2O3) substrate, a silicon substrate, a silicon carbide (SiC) substrate, and an aluminum oxide (Al2O3) sapphire substrate.

Afterwards, the first layer deposition step (S120) may be performed. In the first layer deposition step (S120), the first layer may be deposited on the substrate by either a gas supply assembly or a liquid supply assembly. At this time, the first layer may be deposited as a thin film by atomic layer deposition (ALD), and the gas supply assembly may operate when the thin film is deposited by atomic layer deposition (ALD).

Afterwards, a second layer deposition step (S130) may be performed. In the second layer deposition step (S130), the second layer may be deposited on the first layer by either a gas supply assembly or a liquid supply assembly. Meanwhile, the first layer and the second layer may be deposited through different deposition methods. Exemplarily, the first layer deposition step (S120) may be performed using an atomic layer deposition method to deposit the first layer on the substrate, and the second layer deposition step (S130) may be performed using an organic metal chemical vapor deposition method and mist chemistry. Any of the vapor deposition methods may be performed to deposit the second layer on the substrate.

Additionally, a third layer deposition step (S140) may be performed. In the third layer deposition step (S140), the third layer may be deposited on the second layer by a liquid supply assembly. Meanwhile, the third layer may be deposited through a different deposition method than the first layer and the second layer. Exemplarily, the first layer deposition step (S120) may be performed using an atomic layer deposition method to deposit the first layer on the substrate, and the second layer deposition step (S130) may be performed using an organic metal chemical vapor deposition method. The second layer may be deposited on the first layer, and the third layer deposition step (S140) may be performed using a mist chemical vapor deposition method to deposit the third layer on the second layer.

Meanwhile, since the thickness, formation temperature, etc. of each layer were described in the process of explaining the hybrid deposition device for gallium oxide according to the disclosed embodiment of the present invention, detailed description of each layer will be omitted.

As another example, when the first layer deposition step (S120) is performed by a mist chemical vapor deposition method to deposit the first layer on the substrate, the second layer deposition step (S130) is performed by an atomic layer deposition method to deposit the second layer. A layer may be deposited on the first layer. In this way, thin film deposition and crystal growth are possible on a substrate by applying an efficient method for manufacturing a high-performance semiconductor, and a high-quality semiconductor by applying a plurality of deposition methods using the hybrid deposition method according to the disclosed embodiment of the present invention. There is an advantage in being able to manufacture.

Additionally, the hybrid deposition method according to the disclosed embodiment of the present invention is performed using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention, and thus shares the advantages of the hybrid deposition apparatus.

Below, a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention will be described. In describing a hybrid deposition device for gallium oxide according to another embodiment of the present invention, the same configuration and structure as the hybrid deposition device for gallium oxide according to an embodiment of the present invention described above will be briefly mentioned or omitted. .

Figure 6 is a conceptual diagram of a hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention.

Referring to FIG. 6, the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention includes the same gas supply assembly 100 and liquid supply assembly 200 as the hybrid deposition apparatus 2 for gallium oxide described above. , a chamber unit 300, and an injection unit 400.

In addition, the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention provides a more specific structure for applying various deposition methods to one hybrid deposition apparatus for gallium oxide. For example, atomic layer deposition (ALD), one of the deposition methods, has a slow deposition rate, but has the advantage of relatively detailed crystals of the deposited layer. As another example, metal organic chemical vapor deposition (MOCVD), another one of the deposition methods, has the advantage of a fast deposition rate, although the crystals of the deposited layer are relatively coarse.

However, when depositing a layer using atomic layer deposition (ALD), the source gas (S1, S2, S3, S4) and/or source liquid (L1) must be sprayed and deposited under relatively low pressure and low temperature conditions. , when depositing a layer using metal organic chemical vapor deposition (MOCVD), the source gas (S1, S2, S3, S4) and/or source liquid (L1) must be sprayed and deposited under relatively high pressure and high temperature conditions. do. In order to ensure that the layer is deposited on the substrate 900 in a uniform and stable shape and structure, optimal deposition conditions may differ depending on which deposition method is used.

Since the conventional deposition equipment applied a single deposition method, the conventional deposition equipment was operated in such a way that the conditions inside the chamber unit 300 were kept constant. In addition, even if a plurality of deposition methods are applied to one substrate using only a plurality of deposition equipment applying different deposition methods, the crystal of the deposited layer is deformed when moving from one deposition equipment to another. Otherwise, there is a risk of contamination from the external environment.

In order to solve these problems, the hybrid deposition device 2 for gallium oxide according to another (disclosed) embodiment of the present invention supports the lower part of the substrate 900 and rotates the substrate 900 in one direction to adjust the substrate. It may further include a unit 600'. At this time, the substrate adjustment unit 600' of the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention not only rotates the substrate 900, but also lifts the substrate 900 to adjust the chamber unit ( The position of the substrate 900 within 300) can be adjusted. For example, the substrate adjustment unit 600' may adjust the height (h) of the substrate 900 within the chamber unit 300 by raising or lowering. As shown in FIG. 6, the height (h) of the substrate 900 may refer to the distance between the ends of the plurality of injection nozzles 410, which are a component of the injection unit 400, and the upper surface of the substrate 900. there is.

Figure 7 is for explaining the process of preparing the substrate 900 in the first state to deposit the first layer by the first deposition method in the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention. , FIG. 8 is for explaining the process of preparing the substrate 900 in the second state to deposit the second layer by the second deposition method in the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention. will be.

Referring to FIG. 7, the substrate adjustment unit 600' may raise the heating unit 700 and the susceptor 500, and accordingly, the substrate 900 seated on the susceptor 500 may also be raised. It is moved to position 1 or the first height (h1). Additionally, the heating unit 700 may be controlled by a control unit (not shown) to heat the substrate 900 to the first temperature range T1. When the substrate 900 is prepared in the first state in this way, the injection nozzles 410 are supplied with the source gas (S1, S2, S3, S4) or an atomized source under the first process pressure (P1) using the first deposition method. The liquid L1 may be sprayed toward the upper surface of the substrate 900, and a first layer may be deposited on the substrate 900.

More specifically, the first deposition method may be atomic layer deposition (ALD), and the first temperature range (T1) included in the first state may be 100°C to 350°C. Additionally, the thickness of the first layer deposited using the first deposition method may be 10 nm to 30 nm, and the first process pressure (P1) according to the first deposition method may be 0.5 to 20 torr. The first layer deposited using the first deposition method may form an amorphous buffer layer.

Referring to FIG. 8, after the first layer is deposited on the substrate 900, the substrate adjustment unit 600' may lower the heating unit 700 and the susceptor 500, thereby lowering the susceptor ( The substrate 900 seated on 500) is also lowered and moved to the second position or second height h2. Additionally, the heating unit 700 may be controlled by a control unit (not shown) to heat the substrate 900 in the second temperature range T1. When the substrate 900 is prepared in the second state in this way, the injection nozzles 410 are supplied with the source gas (S1, S2, S3, S4) or an atomized source under the second process pressure (P1) using the second deposition method. The liquid L1 may be sprayed toward the upper surface of the substrate 900 (more specifically, the upper surface of the first layer), and the second layer may be sprayed on the substrate 900 (more specifically, on the first layer). can be deposited on

At this time, the second deposition method may be metal-organic chemical vapor deposition (MOCVD), and the second height (h2) may be increased due to the difference in optimal conditions between metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). ) is formed to be larger than the first height (h1), the second temperature range (T2) is formed to be higher than the first temperature range (T1), and the second process pressure (P2) is also formed to be higher than the first process pressure (P1). can be set. In addition, the thickness of the second layer may be greater than the thickness of the first layer.

More specifically, the second temperature range (T1) included in the second state may be 400°C to 1,000°C. Additionally, the thickness of the second layer deposited using the second deposition method may be 1 μm to 10 μm, and the second process pressure (P2) according to the second deposition method may be 30 torr to 500 torr. The second layer deposited using the second deposition method may form a single crystal layer.

Meanwhile, the first layer can act as an amorphous buffer layer so that the single crystal second layer can be more easily laminated on the substrate 900, and this has the advantage of allowing the second layer to be deposited and grown stably.

If necessary, a process of cleaning the inside of the chamber unit 300 may be performed before and after depositing the second layer. In particular, after depositing the second layer, the source gas (S1, S2, S3, S4) is deposited inside the chamber unit 300 by high-pressure injection of the source gas (S1, S2, S3, S4) or the source liquid (L1). Alternatively, there is a high possibility that the source liquid (L1) remains, and a cleaning step of discharging the remaining source gas (S1, S2, S3, S4) or source liquid (L1) to the outside may be performed. Accordingly, the reliability of the power semiconductor completed by depositing a layer on the substrate 900 can be improved, and the durability of the hybrid deposition device 2 for gallium oxide is improved.

As such, the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention includes a substrate adjustment unit 600' and a heating unit 700 capable of lifting the substrate 900, so that each layer The state (temperature, height, etc.) of the inside of the chamber unit 300 and the substrate 900 can be changed to correspond to the optimal conditions of the deposition method used to deposit. Accordingly, multiple layers can be stably deposited using multiple deposition methods within one device, the production speed of power semiconductors manufactured by depositing and growing layers on a substrate is improved, and the inflow of foreign substances during the deposition process is improved. This has the advantage of improving the reliability of power semiconductors.

Hereinafter, a hybrid deposition method using the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention will be described. In describing the hybrid deposition method according to another embodiment of the present invention, the same configuration and structure as the hybrid deposition method according to the above-described embodiment of the present invention will be briefly mentioned or the description will be omitted.

Figure 9 is a schematic flowchart of a hybrid deposition method using the hybrid deposition apparatus 2 for gallium oxide according to another embodiment of the present invention.

Referring to FIG. 9, the hybrid deposition method using the hybrid deposition apparatus 2 for gallium oxide according to the disclosed embodiment of the present invention includes a substrate preparation step (S210) and a first layer deposition step (S210), similar to the hybrid deposition method described above. S230), and a second layer deposition step (S260). The substrate preparation step (S210) in this embodiment is the same as the substrate preparation step (S110) in the above-described embodiment, and the first layer deposition step (S230) in this embodiment is the first layer deposition step (S230) in the above-described embodiment. It is the same as the layer deposition step (S120), and the second layer deposition step (S260) in this embodiment is the same as the second layer deposition step (S130) in the above-described embodiment, so detailed description is omitted.

Meanwhile, the hybrid deposition method according to another embodiment of the present invention may further include deposition preparation steps (S220, S250) before each deposition step (S230, S260). Exemplarily, the deposition preparation steps S220 and S250 may include a first layer deposition preparation step S220 and a second layer deposition preparation step S250.

The first layer deposition preparation step (S220) may be performed between the substrate preparation step (S210) and the first layer deposition step (S230). The first layer deposition preparation step (S220) may be a step of preparing the state of the substrate under optimal conditions for the first deposition method used to deposit the first layer on the substrate. Exemplarily, the first deposition method may be atomic layer deposition (ALD), and in the first layer deposition preparation step (S220), the substrate adjustment unit, which is a component of the hybrid deposition device for gallium oxide, includes a heating unit and a susceptor. The substrate placed on the susceptor can be adjusted to the first height by lifting (more specifically, raising). At this time, ‘height’ may mean the vertical distance from the ends of the injection nozzles, which are the detailed configuration of the injection unit, to the top surface of the substrate. Additionally, in the first layer deposition preparation step (S220), the heating unit may heat the substrate to reach the first temperature range. Accordingly, in the first layer deposition preparation step (S220), the substrate and chamber unit may be prepared in the first state.

When the substrate is prepared in the first state through the first layer deposition preparation step (S220), the injection unit sprays the source gas or source liquid toward the substrate at the first process pressure in the first layer deposition step (S230) to form an amorphous layer. The first layer may be deposited to a first thickness. As an example, the first layer may be a buffer layer, and the first layer may serve to buffer the second layer so that it can be easily deposited and grown on the substrate. The first temperature range, first process pressure, and first thickness for depositing the first layer have already been described in the hybrid deposition apparatus for gallium oxide, and detailed descriptions will be omitted.

The second layer deposition preparation step (S250) may be performed between the first layer deposition step (S230) and the second layer deposition step (S260). The second layer deposition preparation step (S260) may be a step of preparing the state of the substrate with optimal conditions for the second deposition method used to deposit the second layer on the substrate (more specifically, on the first layer). there is. Illustratively, the second deposition method may be a metal organic chemical vapor deposition (MOCVD) method, and in the second layer deposition preparation step (S250), the substrate adjustment unit, which is a component of the hybrid deposition device for gallium oxide, includes a heating unit and a The substrate placed on the susceptor can be adjusted to the second height by lifting (more specifically, lowering) the susceptor. Additionally, in the second layer deposition preparation step (S250), the heating unit may heat the substrate to reach the second temperature range. Accordingly, in the second layer deposition preparation step (S250), the substrate and chamber unit may be prepared in a second state.

When the substrate is prepared in the second state through the second layer deposition preparation step (S250), the injection unit sprays the source gas or source liquid toward the substrate at the second process pressure in the second layer deposition step (S260) to form a single crystal. The second layer may be deposited to a second thickness. Illustratively, the second layer may be a single crystal layer, and the second layer may be stacked on the first layer, which is a buffer layer. The second temperature range, second process pressure, and second thickness for depositing the second layer have already been described in the hybrid deposition apparatus for gallium oxide, and detailed descriptions will be omitted.

Additionally, a cleaning step (S240) may be further included between the first layer deposition step (S230) and the second layer deposition step (S260). The cleaning step (S240) may be a process for discharging the source gas (S1, S2, S3, S4) or source liquid (L1) remaining in the chamber unit due to the first layer deposition step (S230) to the outside. . In the cleaning step (S240), the substrate adjustment unit, which is a component of the hybrid deposition apparatus for gallium oxide, elevates (more specifically, raises) the heating unit and the susceptor to adjust the substrate seated on the susceptor to the third height. You can. At this time, the third height may be the same as the first height or may be smaller than the first height. That is, in the cleaning step (S240), the substrate may be raised to a higher position than in the first layer deposition step (S230). Additionally, in the cleaning step (S240), the heating unit may be turned off. When the substrate is adjusted to the third height, purge gas is supplied through the injection unit, or the gas and/or liquid remaining inside the chamber unit 300 can be easily discharged to the discharge line through the operation of the main pumping module. .

Meanwhile, in the cleaning step (S240), not only the internal space of the chamber unit, but also the substrate adjustment unit enters the chamber unit as much as possible, so that the source gas (S1, S2, S3, S4) that may remain on the surface of the substrate adjustment unit ) and/or the source liquid (L1) can be removed, and the overall hygiene of the hybrid deposition device for gallium oxide can be improved.

If necessary, a third layer deposition step (not shown) of additionally depositing a third layer on the second layer using a third deposition method (e.g., Mist-CVD method) after the second layer deposition step (S260). Poetry) may be further included. In addition, between the second layer deposition step (S260) and the third layer deposition step, a second cleaning step (not shown) may be performed to additionally clean the inside of the chamber unit, which is optimal for using the third deposition method. A third adjustment step (not shown) may be performed to prepare the substrate to a third state (eg, adjusting the substrate to a third height) to achieve the condition.

Although the preferred embodiment of the present invention has been described above, the present invention is not limited thereto, and can be implemented with various modifications within the scope of the claims, the detailed description of the invention, and the accompanying drawings, which are also part of the present invention. It is natural that it falls within the scope.

1,2: Hybrid deposition device for gallium oxide 100: Gas supply assembly
110: Source gas supply module 120: Reaction gas supply module
130: Purge gas supply module 140: Main pumping module
200: Liquid supply assembly 210: Source liquid supply unit
220: Evaporation unit 300: Chamber unit
400: injection unit 500: susceptor
600, 600': substrate adjustment unit 700: heating unit
S110: Substrate preparation step S120: First layer deposition step
S130: Second layer deposition step S140: Third layer deposition step
S210: Substrate preparation step S220: First layer deposition preparation step
S230: First layer deposition step S240: Cleaning step
S250: Second layer deposition preparation step S260: Second layer deposition step

Claims (19)

In the hybrid deposition device for gallium oxide,
A gas supply assembly that supplies source gas, reaction gas, and purge gas;
a liquid supply assembly that supplies at least a portion of the source gas; and
A hybrid deposition apparatus for gallium oxide, comprising a chamber unit connected to the gas supply assembly and the liquid supply assembly and having a substrate disposed therein. In claim 1,
The gas supply assembly,
For gallium oxide, comprising a source gas supply module for supplying the source gas, a reaction gas supply module for supplying the reaction gas, a purge gas supply module for supplying the purge gas, and a main pumping module for providing negative pressure. Hybrid deposition device. In claim 2,
The source gas supply module,
a first source gas supply unit supplying a first source gas; and
It includes a second source gas supply unit supplying a second source gas different from the first source gas,
A hybrid deposition device for gallium oxide, wherein at least one of the first source gas and the second source gas contains trimethyl gallium (TMG). In claim 3,
The reaction gas supply module is arranged to be connected to the purge gas supply module, and the reaction gas supply module receives oxygen (O2) from the outside to generate ozone (O3) and supplies it to the chamber unit. Hybrid deposition device for gallium. In claim 4,
A hybrid deposition device for gallium oxide, wherein the reaction gas supply module adjusts the ratio of gallium supplied from the source gas supply module and the liquid supply assembly to ozone supplied to the chamber unit. In claim 4,
The liquid supply assembly is a hybrid deposition device for gallium oxide, characterized in that it includes a source liquid supply unit for supplying the source liquid, and an evaporation unit for atomizing the source liquid. In claim 1,
The gas supply assembly and the liquid supply assembly are coupled to the upper side of the chamber unit, and the source gas, reaction gas, purge gas supplied from the gas supply assembly, or the source liquid supplied from the liquid supply assembly is supplied to the inside of the chamber unit. A hybrid deposition device for gallium oxide, characterized in that it is sprayed vertically toward one surface of the substrate disposed on. In claim 7,
A plurality of devices formed inside the chamber unit and connected to the gas supply assembly and the liquid supply assembly to spray at least one of the source gas, the reaction gas, the purge gas, and the source liquid on one surface of the substrate. A hybrid deposition device for gallium oxide, comprising a spray unit including spray nozzles. In claim 1,
A hybrid deposition device for gallium oxide, further comprising a substrate adjustment unit that supports a lower portion of the substrate and rotates the substrate in one direction. In claim 9,
A hybrid deposition apparatus for gallium oxide, further comprising a heating unit formed below the substrate adjustment unit and controlling the temperature inside the substrate and the chamber unit. In claim 10,
A hybrid deposition device for gallium oxide, wherein the substrate adjustment unit adjusts the position of the substrate within the chamber unit by lifting the substrate. In claim 11,
The substrate handling unit prepares the substrate in a first state to deposit a first layer on the substrate by a first deposition method, the substrate handling unit lifts the substrate and moves it to a first height, and The heating unit heats the substrate to a first temperature range,
A hybrid deposition device for gallium oxide, wherein the first deposition method includes an atomic layer deposition method, and the first layer is an amorphous buffer layer. In claim 12,
The substrate handling unit prepares the substrate in a second state for depositing a second layer on the first layer by a second deposition method, and the substrate handling unit lowers the substrate to raise the substrate to a second height. and the heating unit heats the substrate to a second temperature range,
The second deposition method includes an organometallic chemical vapor deposition method, and the second layer is a single crystal layer,
The second height is greater than the first height, and the second temperature range is greater than the first temperature range. In claim 1,
The gas supply assembly and the liquid supply assembly selectively operate to deposit the substrate through at least two of atomic layer deposition (ALD), metal organic chemical vapor deposition (MOCVD), and mist chemical vapor deposition (Mist-CVD). A hybrid deposition device for gallium oxide, characterized in that it grows a plurality of layers on a layer. In the hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to any one of claims 1 to 14,
A substrate preparation step of placing a substrate to be grown inside a chamber unit;
a first layer deposition step of depositing a first layer on the substrate by one of a gas supply assembly and a liquid supply assembly; and
A second layer deposition step of depositing a second layer on the first layer by any one of the gas supply assembly and the liquid supply assembly,
A hybrid deposition method using a hybrid deposition apparatus for gallium oxide, characterized in that the first layer and the second layer are deposited through different deposition methods. In claim 15,
The first layer deposition step is performed using atomic layer deposition (ALD), which is the first deposition method,
The second layer deposition step is a hybrid using a hybrid deposition device for gallium oxide, characterized in that it is performed by one of the second deposition methods, metal organic chemical vapor deposition (MOCVD) and mist chemical vapor deposition (Mist-CVD). Deposition method. In claim 16,
Before the first layer deposition step, a first layer deposition preparation step of preparing the substrate to a first state that is an optimal condition for the first deposition method by a substrate adjustment unit; and
Before the second layer deposition step, a second layer deposition preparation step of preparing the substrate to a second state, which is an optimal condition for the second deposition method, by the substrate adjustment unit. Hybrid deposition method using a hybrid deposition device. In claim 17,
The first state includes at least one of a first height and a first temperature range,
The second state includes at least one of a second height and a second temperature range,
A hybrid deposition method using a hybrid deposition apparatus for gallium oxide, wherein the second height is formed to be greater than the first height, and the second temperature range is formed to be higher than the first temperature range. In claim 15,
A third layer deposition step of depositing a third layer on the second layer by the liquid supply assembly,
A hybrid deposition method using a hybrid deposition apparatus for gallium oxide, characterized in that the third layer deposition step is performed by a mist chemical vapor deposition method.

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