KR101123828B1 - Atomic layer depositon apparatus used in manufacturing semiconductor device - Google Patents

Abstract

The present invention relates to an atomic layer deposition apparatus for a semiconductor device, the atomic layer deposition apparatus comprising a process chamber; A support member provided in the process chamber and having four susceptors on which a substrate is placed; First, second, n gas supply members for supplying a reaction gas; A purge gas supply member for supplying a purge gas; Reactive gas and purge gas received from the first, second, and n gas supply members and the purge gas supply member are independently of the entire processing surface of the substrate at positions corresponding to each of the plurality of substrates placed on each of the susceptors. An injection member having four independent baffles to inject; And a driving unit for rotating the support member or the injection member so that the baffles of the injection member sequentially rotate to each of the four substrates placed on the susceptor. Each of the first, second, and n gas supply members includes high pressure charging tanks in which a reaction gas is charged at high pressure; A gas filling line connected to a reaction gas source; A filling distribution line connecting the gas filling line and the gas filling ports of the high-pressure filling tanks in parallel and having a filling valve; A gas supply line for supplying gas to the injection member; A discharge distribution line connecting the gas supply line and the gas discharge ports of the high-pressure charging tanks in parallel and having a discharge valve; And a controller controlling the filling valve and the discharge valve to discharge the reaction gas from the high pressure charging tanks or to charge the reaction gas to the high pressure charging tanks according to the rotational speed of the support member.

Atomic layer, deposition, compression tank

Description

Atomic layer deposition apparatus used for semiconductor manufacturing {ATOMIC LAYER DEPOSITON APPARATUS USED IN MANUFACTURING SEMICONDUCTOR DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus used for manufacturing a semiconductor element, and more particularly, to an atomic layer deposition apparatus.

In order to improve the conformability of the deposited film quality, an atomic layer deposition method is introduced in the deposition process for manufacturing a semiconductor device. The atomic layer deposition method is a process of forming a deposition layer with a desired thickness by repeating a unit reaction cycle for depositing an atomic layer thickness. The atomic layer deposition method is used for chemical vapor deposition (CVD) or sputter method. In comparison, the deposition rate is very slow, and it takes a lot of time to grow the film to the desired thickness, thereby reducing productivity.

In particular, a sufficient quality of the precursor (Precussor) for the formation of a thin film in the atomic layer deposition equipment can be formed in a good quality, the supply of a sufficient time to provide a sufficient time to form a thin film can be uniformly formed.

SUMMARY OF THE INVENTION An object of the present invention is to provide an atomic layer deposition apparatus for use in fabrication of a batch type semiconductor capable of simultaneously depositing thin films on multiple substrates.

It is also an object of the present invention to provide an atomic layer deposition apparatus for use in semiconductor manufacturing that can improve productivity.

It is also an object of the present invention to provide an atomic layer deposition apparatus for use in semiconductor manufacturing that can supply a sufficient reaction gas in a short time.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

The atomic layer deposition apparatus of the present invention for achieving the above object is a process chamber in which a plurality of substrates are accommodated and the deposition process is performed; A support member installed in the process chamber and having a plurality of substrates; A plurality of gas supply members for supplying a reaction gas; A purge gas supply member for supplying a purge gas; And an injection member for injecting gas supplied from the plurality of gas supply parts and the purge gas supply member to the entire processing surface of the substrate at a position corresponding to each of the plurality of substrates placed on the support member. Each of the plurality of gas supply members includes high pressure charging tanks in which the reaction gas is filled at high pressure so that the reaction gas is ejected and diffused over the entire processing surface of the substrate in a short time, and the injection member is filled in the high pressure charging tanks. Supply reactant gases sequentially.

According to an embodiment of the present invention, the high pressure charging tanks are connected in parallel.

According to an embodiment of the present invention, the high-pressure charging tanks are recharged after the discharge of the reaction gas, and waits until the next release.

According to an embodiment of the present invention, the high-pressure charging tank has a volume capable of filling the reaction gas in an amount equal to or greater than the amount of the reaction gas supplied to the substrate at least once.

According to an embodiment of the present invention, the injection member includes at least four spaces partitioned to independently inject the reaction gas and the purge gas provided from the gas supply member to the substrate.

According to an embodiment of the present invention, it further comprises a driving unit for rotating the support member.

According to an embodiment of the present invention, the plurality of gas supply members include a gas filling line connected to a reaction gas supply source; A filling distribution line connecting the gas filling line and the gas filling ports of the high-pressure filling tanks in parallel and having a filling valve; A gas supply line for supplying gas to the injection member; A discharge distribution line connecting the gas supply line and the gas discharge ports of the high-pressure charging tanks in parallel and having a discharge valve; And a controller controlling the filling valve and the discharge valve to discharge the reaction gas from the high pressure charging tanks or to charge the reaction gas to the high pressure charging tanks according to the rotational speed of the support member.

The atomic layer deposition method for achieving the above object comprises the steps of rotating the support member on which the substrate is placed; Supplying a first reaction gas, a purge gas, a second reaction gas and a purge gas into the process chamber; Spraying a first reaction gas, a purge gas, a second reaction gas, and a purge gas supplied into the process chamber onto upper surfaces of the substrates placed on the support member through independent baffles; And forming a thin film on the substrate while the substrates placed on the rotating support member are exposed to gases. Pumping unreacted gas to the outside; The gas supply step includes a high-pressure charging tank in which the first reaction gas and the second reaction gas are filled at a high pressure so that the first reaction gas and the second reaction gas are ejected and diffused over the entire processing surface of the substrate in a short time. In addition, the corresponding baffles sequentially supply the first reaction gas and the second reaction gas filled in the high-pressure charging tanks.

According to an embodiment of the present invention, in the gas injection step, the first reaction gas, the purge gas, the second reaction gas and the purge gas are vertically injected toward the processing surface of the substrate.

According to an embodiment of the present invention, the gas supply step is a reaction gas is recharged after the reaction gas charged in the high-pressure charging tank is discharged, and waits until the next release.

According to the present invention, it is possible to supply the reaction gas sufficiently in a short time, and has a special effect of depositing a thin film having excellent step coatability.

According to the present invention, the atomic layer deposition process and the like can be efficiently carried out, the throughput per unit time of a reliable semiconductor device can be increased, and it has a special effect that can contribute to the improvement of the yield of the semiconductor device.

Hereinafter, an atomic layer deposition apparatus and method according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

(Example)

1 is a view for explaining an atomic layer deposition apparatus according to the present invention. 2a and 2b are a perspective view and a cross-sectional view of the injection member shown in FIG. 3 is a plan view of the support member shown in FIG. 1.

1 to 3, an atomic layer deposition apparatus 10 according to an embodiment of the present invention includes a process chamber 100, a support member 200, an injection member 300, Supply member 400 is included.

Process chamber 100 is provided with an entrance 112 on one side. The entrance and exit 112 enters and exits the substrates W during the process. In addition, the process chamber 100 includes an exhaust duct 120 and an exhaust pipe 114 for exhausting the reaction gas and the purge gas supplied to the process chamber at the upper edge and the reaction dispersion generated during the atomic layer deposition process. Exhaust duct 120 is made of a ring type located on the outside of the injection member (300). Although not shown, it is obvious to those skilled in the art that the exhaust pipe 114 is connected to a vacuum pump, and that the pressure control valve, the flow control valve, and the like are installed in the exhaust pipe.

1 and 3, the support member 200 is installed in the interior space of the process chamber 100. The support member 200 is of a batch type in which four substrates are placed. The support member 200 includes a disk-shaped table 210 having first to fourth stages 212a-212d on which upper substrates are placed, and a support pillar 220 for supporting the table 210. . The first to fourth stages 212a-212d may have a circular shape similar to the shape of the substrate. The first to fourth stages 212a to 212d are disposed at intervals of 90 degrees on concentric circles about the center of the support member 200. The support member 200 is rotated by the driving unit 290. The driving unit 290 for rotating the support member 200 preferably uses a stepping motor provided with an encoder capable of controlling the rotational speed and the rotational speed of the driving motor, and the one-cycle process of the injection member 300 by the encoder. (1st reaction gas-purge gas-2nd reaction gas-purge gas) Time is controlled.

Although not shown, the support member 200 may be provided with a plurality of lift pins (not shown) for raising and lowering the substrate W at each stage. The lift pins lift and lower the substrate W to separate the substrate W from the stage of the support member 200 or to mount the substrate W on the stage. In addition, each stage 212a-212d of the support member 200 may be provided with a heater (not shown) for heating the mounted substrate W. The heater heats the substrate to raise the temperature of the substrate W to a preset temperature (process temperature).

As shown in FIGS. 2A and 2B, the injection member 300 injects gas into each of the four substrates placed on the support member 200. The injection member 300 receives the first and second reaction gases and the purge gas from the supply member 400. The injection member 300 may include a head 310 having first to fourth baffles 320a to 320d for injecting gases provided from the supply member 400 to the entire processing surface of the substrate at positions corresponding to each of the substrates. The shaft 330 is installed to penetrate the upper center of the process chamber 100 and support the head 310. The head 310 has a disk shape, and the first to fourth baffles 320a-320d having independent spaces for accommodating respective gases therein are partitioned at 90 degree intervals from the center of the head 310. In the shape of a fan, the gas outlets 312 are formed on the bottom. Gases provided from the supply member 400 are supplied to the independent spaces of each of the first to fourth baffles 320a to 320d, which are sprayed through the gas ejection ports 312 to be provided to the substrate. The first reaction gas is provided to the first baffle 320a, the second reaction gas is provided to the third baffle 320c, and the second baffle is positioned between the first baffle 320a and the third baffle 320c. The purge gas 320b and the fourth baffle 320d are provided to prevent mixing of the first reaction gas and the second reaction gas and to purge the unreacted gas.

For example, the head 310 is formed in a fan shape with the first to fourth baffles 320a to 320d spaced at 90 degree intervals, but the present invention is not limited thereto, and the head 310 is spaced at 45 degree intervals or 180 degree intervals depending on the process purpose or characteristics. Alternatively, the size of each baffle may be configured differently.

The supply member 400, which may be referred to as the most essential configuration in the present invention, includes a first gas supply member 410a, a second gas supply member 410b, and a purge gas supply member 420. The first gas supply member 410a supplies a first reaction gas for forming a predetermined thin film on the substrate w to the first baffle 320a, and the second gas supply member 410b supplies a second reaction gas. Is supplied to the third baffle 320c, and the purge gas supply member 420 supplies the purge gas to the second and fourth baffles 320b and 320d. The purge gas supply member 420 continuously supplies the purge gas at a constant flow rate, but the first gas supply member 410a and the second gas supply member 410b are charged at a high pressure by using the high pressure charging tanks 412. Existing reaction gas is released in a short time (flash supply method) to diffuse on the substrate.

In the present embodiment, two gas supply members are used to supply two different reaction gases, but it is obvious that a plurality of gas supply members may be applied to supply three or more different reaction gases according to process characteristics. .

Since the first gas supply member 410a and the second gas supply member 410b have the same configuration, only the first gas supply member 410a will be described.

The first gas supply member 410a includes four high-pressure filling tanks 412, a gas filling line 413, a filling distribution line 414, a gas supply line 416, a discharge distribution line 417, and a valve controller ( 490). The number of installation of the high-pressure charging tank is proportional to the rotational speed of the support member 200, the exact number may be determined according to the supply flow rate, the capacity of the filling tank and the like during the filling of the high-pressure charging tank. The high pressure charging tanks 412 are filled with a first reaction gas at a high pressure. It is preferable that the high-pressure charging tank 412 has a volume (capacity) in which at least one amount of the first reaction gas that is equal to or greater than the amount of the first reaction gas supplied to the substrate is filled. The high pressure charging tanks 412 are connected in parallel. The gas filling line 413 is connected to the reaction gas supply source 402, and the filling distribution line 414 connects the gas filling line 413 and the gas filling ports of the high pressure charging tanks 412 in parallel to each other. 414a) is installed. The gas supply line 416 is for supplying gas to the first baffle 320a of the injection member 300, and the discharge distribution line 417 discharges gas from the gas supply line 416 and the high-pressure filling tank 412. The port is connected in parallel and the discharge valve 417a is installed. The valve controller 490 may discharge the reaction gas from the high pressure charging tanks 412 or charge the reaction gas to the high pressure charging tanks 412 according to the rotational speed of the support member 200. The discharge valve 417a is controlled.

The first gas supply member 410a and the second gas supply member 410b of the present invention have a high-pressure charging tank 412 in which the reaction gas is filled at a high pressure so that the entire processing surface of the substrate is exposed (diffused) to the reaction gas in a short time. ), The reaction gas which is filled in the high-pressure charging tank 412 corresponding to the baffle of the injection member 300 is sequentially supplied.

4 is a graph showing the flow rate of the first reaction gas provided to the first baffle through the high pressure charging tanks of the first gas supply member.

As shown in FIG. 4, when the discharge valve 417a is opened, the first reaction gas rapidly rises in a short time and then decreases rapidly. In other words, rather than supplying the first reaction gas to be supplied to one substrate for a predetermined time, the substrate is formed by supplying a large amount of reaction gas to the substrate in a short time using the high-pressure charging tank 412 as in the present invention. Sufficient thin film deposition can be expected by exposing to this reaction gas. In particular, the flash supply method using the high-pressure charging tank 412 can be made more sure purge process using the purge gas.

5A is a graph showing a change in gas amount on a substrate in a one cycle process by a flash supply method using a high pressure charging tank, and FIG. 5B is a graph showing a change in gas amount on a substrate in a one cycle process by a continuous supply method.

As shown in FIG. 5A, one cycle of the atomic layer deposition process is performed through the first reaction gas injection-purge gas injection-second reaction gas injection-purge gas injection (one rotation of the supporting member). The second reaction gas is a flash supply method using the high-pressure charging tank 412, and a large amount of the reaction gas diffuses (exposures) on the substrate in a short time, and then the amount decreases rapidly. Since the removal is more smoothly, it is possible to minimize the mixing of the first reaction gas and the second reaction gas. On the other hand, the purge gas gradually increases before the supply time of the first reaction gas is completed, and then gradually decreases again.

5b shows a case where the first reaction gas and the second reaction gas proceed in the same continuous supply method as the purge gas, and the first reaction gas and the second reaction gas gradually increase in a curve similar to that of the purge gas, It can be seen that it gradually decreases again. If the support member 200 is not rotated and is in a fixed state (or a low speed state when the reaction gas is allowed to react to the substrate), there is no big problem. However, if the rotational speed of the support member 200 is slightly increased in order to increase the throughput, sufficient supply of reaction gas onto the substrate becomes difficult, resulting in problems in thin film formation.

As such, the first gas supply member 410a and the second gas supply member 410b include the high-pressure filling tanks 412, so that a sufficient amount of reaction gas is provided to the first baffle 320a and the third baffle 320c. Can be supplied in a relatively short time, and the surface reaction (thin film deposition) on the substrate can be maximized.

For example, SiH2Cl2 (first reaction gas) and NH3 (second reaction gas) may be used to form a Si3N4 thin film, wherein the process temperature is 375 degrees, and 0.6 * 10 ⁶ L [0.6 in the case of precursor exposure. * 10 ^-6 Torr * sec]. It was measured by changing the exposure time to a change in the rotation speed of ^{60rpm = 0.04nm.Cycle [0.6 * 10 6} L], 30rpm = 0.05nm.Cycle [1.2 * 10 6 L], 15rpm = 0.06nm.Cycle [2.4 A growth rate of 10 ⁶ L] can be obtained. Here, the process parameters for forming the thin film may include precursor exposure, purge time, deposition temperature, and the like, and the purge time may be controlled by changing the rotational speed of the support member 200. The supply time of the reactant gas also fluctuates. The deposition temperature may be controlled by setting the temperature of the support member 200. In the case of precursor exposure, the supply time may be increased as described above, but may be controlled by increasing the supply pressure.

6 is a graph of growth rate change according to changes in temperature and reactant exposure under the same conditions. In the case of 450 degrees, the growth rate changes slightly according to the change in precursor exposure, but it can be seen that the growth rate changes significantly as the temperature is increased and the precursor exposure increases. That is, the thin film formation time can be shortened by increasing the precursor exposure at the same rotational speed, and by increasing the precursor exposure, the reaction gas charged at high pressure using the high pressure charging tanks 412 without increasing the supply time. It is possible by discharging (flash supply method) in a short time and diffusing (exposure) on a substrate.

The present invention is also applicable to a facility for treating the surface of a substrate by sequentially spraying at least two different gases (gas) onto the substrate. As a preferred embodiment of such embodiments, a batch atomic layer deposition apparatus used in an atomic layer deposition process has been described as an example. The present invention can be applied to a thin film deposition apparatus using a high density plasma (HDP), In order to be used in the deposition apparatus, a plasma generating means may be further installed on top of the process chamber.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

1 is a view for explaining an atomic layer deposition apparatus according to the present invention.

2a and 2b are a perspective view and a cross-sectional view of the injection member shown in FIG.

3 is a plan view of the support member shown in FIG. 1.

4 is a graph showing the flow rate of the first reaction gas provided to the first baffle through the high pressure charging tanks of the first gas supply member.

Figure 5a is a graph showing a change in the amount of gas on the substrate in a one-cycle process by the flash supply method using a high-pressure charging tank.

Figure 5b is a graph showing the amount of gas on the substrate in a one-cycle process by the continuous supply method.

6 is a graph of growth rate change according to changes in temperature and reactant exposure under the same conditions.

<Description of Symbols for Main Parts of Drawings>

100: process chamber

200: support member

300: injection member

400: supply member

Claims (11)

delete delete In an atomic layer deposition apparatus: A process chamber in which a plurality of substrates are accommodated and a deposition process is performed; A support member installed in the process chamber and having a plurality of substrates disposed on the same plane; First, second, n gas supply members for supplying a reaction gas; A purge gas supply member for supplying a purge gas; And And a spraying member for injecting gas supplied from the first, second, and n gas supply parts and the purge gas supply member to the entire processing surface of the substrate at a position corresponding to each of the plurality of substrates placed on the support member. To; The first, second, n gas supply members High pressure charging tanks in which the reaction gas is charged at high pressure are connected in parallel so that the reaction gas is ejected and diffused through the entire processing surface of the substrate in a short time, and the reaction gas charged in the high pressure charging tanks is sequentially supplied to the injection member. Supply; The high-pressure charging tank is an atomic layer deposition apparatus characterized in that the reaction gas is recharged after the discharge of the reaction gas, and waits until the next release. In an atomic layer deposition apparatus: A process chamber in which a plurality of substrates are accommodated and a deposition process is performed; A support member installed in the process chamber and having a plurality of substrates disposed on the same plane; First, second, n gas supply members for supplying a reaction gas; A purge gas supply member for supplying a purge gas; And And a spraying member for injecting gas supplied from the first, second, and n gas supply parts and the purge gas supply member to the entire processing surface of the substrate at a position corresponding to each of the plurality of substrates placed on the support member. To; The first, second, n gas supply members High pressure charging tanks in which the reaction gas is charged at high pressure are connected in parallel so that the reaction gas is ejected and diffused through the entire processing surface of the substrate in a short time, and the reaction gas charged in the high pressure charging tanks is sequentially supplied to the injection member. Supply; And the high-pressure charging tank has a volume capable of filling the reaction gas with an amount equal to or greater than the amount of the reaction gas supplied to the substrate at least once. The method according to claim 3 or 4, The injection member And at least four spaces partitioned to independently eject the reaction gas and the purge gas provided from the first, second, and n gas supply members to the substrate. The method according to claim 3 or 4, An atomic layer deposition apparatus further comprises a driving unit for rotating the support member. The method of claim 6, The first, second, n gas supply members A gas filling line connected to a reaction gas source; A filling distribution line connecting the gas filling line and the gas filling ports of the high-pressure filling tanks in parallel and having a filling valve; A gas supply line for supplying gas to the injection member; A discharge distribution line connecting the gas supply line and the gas discharge ports of the high-pressure charging tanks in parallel and having a discharge valve; And And a controller for controlling the filling valve and the discharge valve to discharge the reaction gas from the high pressure charging tanks or to charge the reaction gas to the high pressure charging tanks according to the rotational speed of the support member. Atomic layer deposition apparatus. delete delete delete delete

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