WO1997038475A1 - A high power surge arrester - Google Patents

A high power surge arrester Download PDF

Info

Publication number
WO1997038475A1
WO1997038475A1 PCT/CN1997/000030 CN9700030W WO9738475A1 WO 1997038475 A1 WO1997038475 A1 WO 1997038475A1 CN 9700030 W CN9700030 W CN 9700030W WO 9738475 A1 WO9738475 A1 WO 9738475A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
electrodes
type electric
energy type
pair
Prior art date
Application number
PCT/CN1997/000030
Other languages
English (en)
French (fr)
Inventor
Yufeng Du
Original Assignee
Yufeng Du
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=5134802&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO1997038475(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Yufeng Du filed Critical Yufeng Du
Priority to AU25025/97A priority Critical patent/AU2502597A/en
Publication of WO1997038475A1 publication Critical patent/WO1997038475A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00—Overvoltage arresters using spark gaps
    • H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
    • H01T4/12—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel hermetically sealed

Definitions

  • the invention relates to a high-energy type electric releaser, which belongs to an overvoltage protection device for spark discharge. Background technique
  • High-energy electrical release devices are devices that can release thousands of volts of high-current electrical surges within a few microseconds to protect electrical equipment. They are widely used in post and telecommunications and computers, instruments, and household appliances. And other fields,
  • a gap discharger has been developed on the basis of the early gap discharge tube. It is a method of mechanically cutting a metal conductive film attached to a porcelain tube into a spiral with a gap of 50-100 ⁇ m.
  • the shape of the discharge electrode generates a secondary high-current discharge process through inert gas ionization in a glass tube.
  • the device has the following problems: cutting burrs exist on the edge of the discharge electrode, and the large current discharge leads to burr wear and deformation, and the discharger As a result, the electrical performance of the device changes and is in an unstable state.
  • the processing asymmetry of this type of device also makes the consistency of the electrical performance poor, and in addition, the requirement of processing accuracy also makes the cost of this type of device higher.
  • the object of the present invention is to provide a high-energy type electric releaser with stable and reliable discharge performance, good consistency and low manufacturing cost.
  • the present invention provides a high-energy type electric releaser, which includes a tube case filled with a specific gas inside, a pair of electrodes hermetically sealed to the tube case, and a pair of external leads electrically connected to the electrodes. It also includes a silicon pillar located between the pair of electrodes inside the case, the silicon pillar is composed of at least two silicon single crystal conductors and an induced discharge layer therebetween.
  • FIG. 1 is a schematic cross-sectional view of a high-energy type electric dry-amplifier according to a first preferred embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a high-energy type electric release according to a second preferred embodiment of the present invention -- Figure;
  • FIG. 3 is a schematic cross-sectional view of a high-energy type electric releaser according to a third preferred embodiment of the present invention. A detailed description of the preferred embodiment
  • FIG. 1 illustrates a cross-sectional structure diagram of a high-energy type electric releaser according to a first preferred embodiment of the present invention.
  • the high-energy type electric front-end discharger includes a tube case 6, for example A glass or ceramic tube envelope is filled with an inert gas.
  • the electric releaser also includes a pair of electrodes 2 and 2 which are air-tightly connected to the tube housing 6 and together form a hermetically sealed inner cavity.
  • a pair of electrode leads 1, ⁇ are connected to the pair of electrodes 2, 2 ', and are located outside the tube case 6 to form an electrical connection with an external circuit.
  • a silicon pillar 9 is disposed between the pair of electrodes 2 and 2 'inside the tube housing 6.
  • the silicon pillar 9 is electrically conductive by a pair of silicon single crystal conductors 4 and sandwiched between the pair of silicon single crystal conductors. inducing a discharge between the body layer 45 constituting here, the silicon column is formed by: a silicon single crystal surface to the physical vapor deposition is deposited to a thickness 20-- ⁇ 00 ⁇ m containing e.g. ⁇ 0 2, ⁇ or Si0 2 And other oxides, preferably the coated silicon single crystal surface is finely processed to make the coating layer uniform; then the coatings are stacked together, sintered at high temperature, diffused, and firmly combined into one body; A plurality of silicon pillars 9 are obtained by cutting.
  • the interface between the oxide coating layer such as Mn0 2 , ZnO, or SiO 2 and the silicon single crystal forms the above-mentioned induced discharge layer 5 in a diffusion process.
  • the electrodes 2, 2 'and the leads 1, ⁇ may be integral parts.
  • the inert gas in the tube shell 6 will be rapidly ionized, and between the pair of electrodes 2, 2 ' A second large current discharge is formed.
  • This structure is suitable for discharge currents below 100A.
  • FIG. 2 shows a high-energy type electric releaser according to a second preferred embodiment of the present invention.
  • the same components as those of the first embodiment are denoted by the same reference numerals, and parts substantially the same as those of the first embodiment are here. No longer described.
  • An interval 8 is formed between the two. According to the design requirements, the interval 8 can be selected between 0.5 and 1.5 mm.
  • FIG. 3 shows a schematic structural diagram of a high energy type electric releaser according to a third preferred embodiment of the present invention, wherein the same components as those of the first and second preferred embodiments are denoted by the same reference numerals, and are the same as those of the first and second preferred embodiments. The same structural parts of the two preferred embodiments are not described again.
  • silicon single crystal conductor 4 is formed by stacking four parts of silicon single crystal conductor 4 and oxide to form three induced discharge layers 5, 5 ', 5 ".
  • the silicon single crystal and metal cap 3 A layer of metal is also sputtered on the end surfaces in contact with the electrodes 3, 3 'or the electrodes 2 and 2' to form the metal conductive layer 7 of the silicon pillar 9, thereby improving the electrical connection characteristics.
  • the first discharges of the three induced electrical layers 5, 5 ', 5 "occur simultaneously, so that the voltage can be distributed on each induced discharge layer to Adapt to the needs of high voltage and high current discharge.
  • the number of layers of the induced discharge layer can be set to a different number of layers as needed and this structure having multiple layers of induced discharge layers can also be applied to the cases of the first and second embodiments.
  • the third embodiment The metal layer 7 on the end face of the silicon pillar 9 in the example can also be applied to the first and second embodiments.
  • 9End face metal layer 7 when the silicon single crystal conductor 4 is heavily doped, it is not necessary to add silicon pillars.
  • the discharge characteristics of the electric discharger of the present invention also depends on the type of inert gas, the pressure, the thickness of the induced discharge layer 5, the number of layers, the cross-sectional area of the silicon column 9, the resistance of the silicon single crystal, and the like.
  • the 1000V surge wave in 10-700 ⁇ s can withstand a discharge current of tens of amperes to thousands of amperes.
  • the structure design and processing of the electric releaser of the present invention can ensure its symmetry, so the discharge characteristics are consistent. it is good.
  • the electric releaser of the present invention also has another advantage, that is, it can be processed and produced by the mature process of the semiconductor device, the manufacturing cost is significantly reduced, the discharge characteristics are stable, and the consistency is good.

Landscapes

  • Emergency Protection Circuit Devices (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)

Description

高能量型电幹放器 技术领域
本发明涉及一种高能量型电释放器， 属于火花放电的过电压保护器件。 背景技术
高能量型电释放器件是指可在数微秒时间内将数千伏大电流的电浪涌 释放掉的器件， 以保护电器设备， 被广泛的用于邮电通讯以及计算机、 仪器 仪表、 家用电器等领域，
近些年来， 在早期间隙放电管的基础上发展了一种间隙放电器， 它是将 附着在瓷管上的金属导电膜用机械的方法切割成相互绝缘的间隙在 50 - 100 μ m的螺旋状放电电极， 通过封装的在玻璃管中的隋性气体电离产生二次大 电流放电过程， 该器件存在的问题是： 放电电极边沿存在切割毛刺， 大电流 放电导至毛刺耗损而变形， 放电器的电性能因此变化， 处于不稳定状态； 该 类器件的加工非对称性也使电性能的一致性较差， 此外加工精度的要求也使 该类器件成本较高。 发明目的
本发明的目的是提供一种放电性能稳定可靠， 一致性好且制作成本较低 的高能量型电释放器。 发明概述
为了实现上述目的， 本发明提供一种高能量型电释放器， 其包括一个内 部充有特定气体的管壳， 一对与该管壳气密封接的电极和一对与电极电连接 的外部引线， 它还包括一个在该管壳内部位于该一对电极之间的硅柱， 该硅 柱由至少两个硅单晶导电体及其之间的诱导放电层构成。 附图的简要说明
图 1是根据本发明的第一个优选实施例的高能量型电幹放器的剖面示意 图；
图 2是根据本发明的第二个优选实施例的高能量型电释放器的剖面示意 - - 图；
图 3是^ ^艮据本发明的第三个优选实施例的高能量型电释放器的剖面示意 图. 对优选实施例的详细描述
首先请参见图 1， 其示出了根据本发明的第一优选实施例的高能量型电 释放器的剖面结构示意图. 本优选实施例的高能量型电锋放器包括一个管壳 6 ， 例如玻璃或陶瓷管壳， 在该管壳内充有惰性气体。 该电释放器还包括一 对电极 2、 2 其与管壳 6气密连接， 并共同构成一气密的内腔。 一对电极 引线 1、 Γ与该一对电极 2、 2'相连， 并且处于管壳 6的外部， 用来与外部 电路形成电连接。 一个硅柱 9设置在管壳 6的内部该对电极 2、 2'之间. 在 该优选实施例中， 该硅柱 9由一对硅单晶导电体 4和夹在该对硅单晶导电体 4之间的诱导放电层 5构成 在此， 该硅柱是这样形成： 在硅单晶表面以物 理气相沉积法淀积厚度为 20 - 〗00 μ m的含例如 Μη02、 ΖηΟ或 Si02等的 氧化物， 最好是涂覆的硅单晶面经过精细加工以使涂覆层均匀； 然后将涂覆 层叠放在一起， 在高温中烧结、 扩散， 并牢固地结合为一体； 最后经过切割 得到多个硅柱 9 , 可以理解， Mn02、 ZnO或 Si〇2等氧化物涂覆层与硅单晶 的界面在扩散工艺中形成了上述的诱导放电层 5。 电极 2、 2'和引线 1、 Γ 可以为整体的部件。
本发明第一优选实施例的电幹放器在工作过程中， 当诱导放电层 5发生 第一次放电时， 将迅速引发管壳 6中惰性气体电离， 在该对电极 2、 2'之间 形成第二次大电流放电。 这种结构可适用于 100A以下的放电电流。
图 2 表示了根据本发明第二优选实施例的高能量型电释放器， 参见图 2 ， 其中与第一实施例相同的部件以相同的标号表示， 并且与第一实施例大 致相同的部分这里不再予以描述。 在该对电极 2、 2'和硅柱 9之间设有一对 金属帽 3、 3', 各金属帽 3、 3'的截面大致为 U形， 各金属帽 3、 3'的边沿 端部之间形成一个间隔 8 , 根据设计要求， 该间隔 8可在 0.5 ~ 1.5mm之间 选择。 另外， 各 U形截面的金属帽 3、 3'的内侧与硅柱 9之间应有一定的间 隙。 由于上述结构， 所以增加了金属帽及硅柱与惰性气体的接触面积.
本发明的第二优选实施例的电释放器在工作过程中， 当诱导电层 5发生 第一次放电时， 将迅速引发惰性气体电离， 同时将大电流二次放电过程转移 - - 到两个金属帽之间进行。 这种结构不仅提高了放电速度， 而且有效地保护了. 硅柱 9和电极 2 , 从而提高了电释放器的稳定性和使用寿命. 根据本发明第 二优选实施例的高能量型电释放器特别适合于对大于 100A 的电流进行放 电,
图 3 示出了本发明的第三优选实施例的高能量型电释放器的结构示意 图， 其中与第一和第二优选实施例相同的部件以相同的标号来表示， 并且与 第一和第二优选实施例相同的结构部分不再予以描述。 在该实施例中， 硅柱
9由四部分硅单晶导电体 4及氧化物层叠合而成， 形成三个诱导放电层 5、 5'、 5",在此实施例中，在叠合后的硅单晶体的与金属帽 3、 3'或与电极 2、 2'相接触的端面还溅射一层金属， 形成硅柱 9的金属导电层 7 , 从而提高电 连接特性，
本发明第三优选实施例的高能量型电释放器工作过程中， 三层诱导电层 5、 5'、 5"同时发生第一次放电， 从而可以使电压分配在各个诱导放电层上， 以适应于高电压大电流放电的需要。
尽管已结合附图描述了本发明的各项优选实施例， 但是本领域的技术人 员不难理解， 在此基础上可以作出多种变型。 例如， 诱导放电层的层数是可 以根据需要设定为不同的层数的 而且这种具有多层诱导放电层的结构也可 以应用于第一和第二实施例的情况. 同样， 第三实施例中的硅柱 9端面的金 属层 7也可以应用于第一和第二实施例中， 一^:说来， 当硅单晶导电体 4在 重掺杂的情况下可以不必要增加硅柱 9端面的金属层 7。 本领域的技术人员 显然还可以作出其它的变型形式。
另外， 本发明的电释放器的放电特性还决定于惰性气体的种类、 压力、 诱导放电层 5的厚度、 层数、 硅柱 9的截面积及硅单晶体的电阻等. 本发明 的电释放器对 10 - 700 μ s内 1000V的浪涌波可承受数十安培至几千安培 的放电电流， 同时本发明的电释放器的结构设计和加工均可保证其对称性， 因此放电特性一致性很好。
本发明的电释放器还有一项优点， 即其可利用半导体器件的成熟工艺加 工生产， 制造成本明显降低， 放电特性稳定， 一致性好。

Claims

权利要求书
1. 一种高能量型电释放器， 其包括一个内部充有特定气体的管壳 (6)， 一对与该管壳 (6)气密封接的电极 (2 ， 2')和一对与电极电连接的外部引线 (1 , V), 其特征在于， 它还包括一个在该管壳 (6)内部位于该一对电极 (2 , 2')之间的硅柱 (9),该硅柱 (9)由至少两个硅单晶导电体 (4)及其之间的诱导放电 层 (5)构成。
2. 根据权利要求 1所述的高能量型电释放器， 其特征在于， 所述硅柱 (9) 的两个端部与所述一对电极 (2 , 2')之间还分别设有一个截面大致为 U形的 金属帽，两个金属帽的端部边沿之间存在一个间隔 (8),该间隔的距离为 0.5 ~ 1 .5mm .
3. 根据权利要求 1或 2所述的高能量型电幹放器， 其特征在于， 所述硅 柱 (9)的两个端部还分别设有一金属导电层 (7), 以使与电极 (2 、 2')或金属帽 (3、 3')形成良好的电接触。
4. 根据权利要求〗或 2所述的高能量型电释放器， 其特征在于， 所述硅 柱（ 9 )从纵向中心看是对称的结构。
PCT/CN1997/000030 1996-04-09 1997-04-08 A high power surge arrester WO1997038475A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU25025/97A AU2502597A (en) 1996-04-09 1997-04-08 A high power surge arrester

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN96207704.6 1996-04-09
CN96207704U CN2253522Y (zh) 1996-04-09 1996-04-09 高能量型电释放器

Publications (1)

Publication Number Publication Date
WO1997038475A1 true WO1997038475A1 (en) 1997-10-16

Family

ID=5134802

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN1997/000030 WO1997038475A1 (en) 1996-04-09 1997-04-08 A high power surge arrester

Country Status (3)

Country Link
CN (1) CN2253522Y (zh)
AU (1) AU2502597A (zh)
WO (1) WO1997038475A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702952A (en) * 1971-10-12 1972-11-14 Western Electric Co Gas tube surge protective device and method for making the device
US3791711A (en) * 1972-10-13 1974-02-12 Telecommunications Ind Method of fabricating a three-terminal voltage surge arrester
CN1095197A (zh) * 1993-05-07 1994-11-16 专利促进中心有限公司 浪涌吸收器及其制造方法
CN1097903A (zh) * 1993-05-31 1995-01-25 凤凰接触公司 过电压保护元件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702952A (en) * 1971-10-12 1972-11-14 Western Electric Co Gas tube surge protective device and method for making the device
US3791711A (en) * 1972-10-13 1974-02-12 Telecommunications Ind Method of fabricating a three-terminal voltage surge arrester
CN1095197A (zh) * 1993-05-07 1994-11-16 专利促进中心有限公司 浪涌吸收器及其制造方法
CN1097903A (zh) * 1993-05-31 1995-01-25 凤凰接触公司 过电压保护元件

Also Published As

Publication number Publication date
CN2253522Y (zh) 1997-04-30
AU2502597A (en) 1997-10-29

Similar Documents

Publication Publication Date Title
JP5200100B2 (ja) 落雷及び過電圧から保護するための装置及びモジュール
JPS6313290A (ja) ガス放電避雷器
CA1124317A (en) Surge arrester with improved impulse ratio
WO1997038475A1 (en) A high power surge arrester
CN1319230C (zh) 片型浪涌吸收器
JP2004014437A (ja) チップ型サージアブソーバ及びその製造方法
JPS61126789A (ja) サ−ジ吸収素子
US6477033B2 (en) Nonlinear dielectric element
CN220291349U (zh) 一种气体放电管
JPS6341748Y2 (zh)
JPS6341749Y2 (zh)
US20220115202A1 (en) Gas discharge tube having enhanced ratio of leakage path length to gap dimension
JPH09190868A (ja) サージアブソーバ
JP3134912B2 (ja) サージアブソーバ
JPH09306635A (ja) サージアブソーバおよびその製造方法
JPH0536460A (ja) 放電型サージ吸収素子
CN2235663Y (zh) 一种电释放器件
JP2615221B2 (ja) ガス入放電型避雷器
JPH10247578A (ja) 放電型サージ吸収素子の製造方法
JP2001284011A (ja) サージ吸収素子
CN117134199A (zh) 一种气体放电管
JPH0547447Y2 (zh)
JPS62272489A (ja) 通信用ガス入放電管形避雷器の構造
JPH11224761A (ja) 高電圧サージアブソーバ
JP2798088B2 (ja) サージ吸収素子

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DE DK EE ES FI GB GE HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG US UZ VN AM AZ BY KG KZ MD RU TJ TM

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH KE LS MW SD SZ UG AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

NENP Non-entry into the national phase

Ref country code: JP

Ref document number: 97535722

Format of ref document f/p: F

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA