WO1997037056B1 - Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations - Google Patents

Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations

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Publication number
WO1997037056B1
WO1997037056B1 PCT/US1997/006060 US9706060W WO9737056B1 WO 1997037056 B1 WO1997037056 B1 WO 1997037056B1 US 9706060 W US9706060 W US 9706060W WO 9737056 B1 WO9737056 B1 WO 9737056B1
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WO
WIPO (PCT)
Prior art keywords
gas stream
effluent gas
pressure
flow
upstream
Prior art date
Application number
PCT/US1997/006060
Other languages
French (fr)
Other versions
WO1997037056A1 (en
Filing date
Publication date
Priority claimed from US08/708,256 external-priority patent/US5851293A/en
Application filed filed Critical
Publication of WO1997037056A1 publication Critical patent/WO1997037056A1/en
Publication of WO1997037056B1 publication Critical patent/WO1997037056B1/en

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Abstract

A pressure stabilization system for damping pressure variations in a process (10) discharging an effluent gas stream, in which the process is pressure-sensitive and downstream pressure variations can adversely affect the upstream process, comprising a motive fluid driver (38) to receive the effluent gas stream, and means (3) for sensing a pressure characteristic of the effluent gas stream and adjusting the flow of the effluent gas stream to damp pressure fluctuations. The pressure stabilization system may further comprise: (i) a variable frequency drive (170) for operating the motive fluid driver at a variable rotational speed; (ii) a pressure transducer monitor (186) for monitoring the pressure characteristic of the effluent gas stream and generating a pressure transduced signal; and (iii) a proportional integral derivative controller (188) coupled with the pressure transducer monitor (186), and responsive to the pressure transduced signal to adjust the variable frequency drive to damp pressure fluctuations.

Claims

AMENDED CLAIMS[received by the International Bureau on 4 November 1997 (04.11.97); original claims 1, 4, 8, 11, 13, 14, 23, 26 and 29 amended; new claims 31-55 added; remaining claims unchanged (13 pages)]
1. A flow stabilization system for damping pressure and flow variations in a process discharging an effluent gas stream, in which the process is pressure-sensitive and flow rate- sensitive, and downstream pressure and flow variations can adversely affect the upstream process, said system comprising a motive fluid driver constructed and arranged to receive the effluent gas stream from the process, and means for sensing a flow characteristic of the effluent gas stream and responsively adjusting the flow of the effluent gas stream to stabilize the process.
2. A pressure stabilization system according to claim 1. wherein the motive fluid driver comprises a ring compressor.
3. A pressure stabilization system according to claim 1. wherein the process comprises a process unit selected from the group consisting of chemical vapor deposition reactors and non-CVD coating apparatus.
4. A flow stabilization system according to claim 1. further comprising: (i) a variable frequency drive for motively operating the motive fluid driver at a correspondingly variable rotational speed; (ii) a pressure transducer monitor for monitoring the pressure characteristic of the effluent gas stream and generating a pressure transduced signal: and (iii) a proportional integral derivative controller coupled in pressure transduced signal-receiving relationship with the pressure transducer monitor, and responsive to the pressure transduced signal to correspondingly adjust the variable frequency drive and responsively selectively drive the motive fluid driver to stabilize the process.
34
5. A pressure stabilization system according to claim 1. further comprising means ror reducing water content of the effluent gas stream upstream of the ring compressor.
6. A pressure stabilization system according to claim 5, wherein the means for reducing water content of the effluent gas stream upstream of the ring compressor comprise a mist eliminator.
7. A pressure stabilization system according to claim 5, wherein the means for reducing water content of the effluent gas stream upstream of the ring compressor comprise means for afJmixing with the effluent gas stream discharged from the process, air of lower relative humidity than the effluent gas stream, in sufficient relative proportions to prevent condensation of water from the effluent gas stream upstream of the ring compressor.
8. A flow stabilization system according to claim 1, wherein the means for sensing a pressure characteristic of the effluent gas stream comprise an orifice plate constructed and arranged for flow therethrough of the effluent gas stream, a pressure sensor/transducer assembly for sensing a pressure drop of the effluent gas stream across the orifice plate during flow of the effluent gas stream therethrough and responsively generating a control signal for responsively selectively driving the motive fluid driver to stabilize the process.
9. A pressure stabilization system according to claim 1 , wherein said means for sensing a pressure characteristic of the effluent gas stream and responsively adjusting the flow of the effluent gas stream to damp pressure fluctuations in the process, comprise a selectively adjustable variable flow control valve constructed and arranged for flowing the effluent gas stream therethrough to the ring compressor.
10. A pressure stabilization system according to claim 9. further comprising a pressure sensor/transducer assembly controlling coupled with said selectively adjustable variable flow control valve and operative to vary the flow of the effluent gas stream through said flow
35 control valve, while selectively driving the motive fluid driver at a selected fixed or vaπaoie speed, to thereby dampen pressure variations which may in the absence of such motive fluid driver and variable flow control valve, upset the upstream process by downstream pressure fluctuations.
11. A flow stabilization system for damping pressure and flow variations in a process discharging an effluent gas stream, in which the process is pressure-sensitive and flow rate- sensitive and downstream pressure and flow variations can adversely affect the upstream process, an orifice plate upstream of said motive fluid driver between said motive fluid driver and the process, and means for sensing a pressure characteristic of the effluent gas stream across the orifice plate responsively selectively adjusting the motive fluid driver to stabilize the process.
12. A pressure stabilization system for damping pressure variations in a process discharging an effluent gas stream, in which the process is pressure-sensitive and downstream pressure variations can adversely affect the upstream process, said system comprising a motive fluid driver constructed and arranged to receive the effluent gas stream from the process, an orifice plate upstream of said motive fluid driver between said motive fluid driver and the process, and means for sensing a pressure characteristic of the effluent gas stream across the orifice plate and responsively selectively adjusting the motive fluid driver to damp pressure fluctuations in the process.
13. A flow stabilization system for damping pressure and flow variations in a process discharging an effluent gas stream, in which the process is pressure-sensitive and flow rate- sensitive and downstream pressure and flow variations can adversely affect the upstream process, said system comprising a motive fluid driver constructed and arranged to receive the effluent gas stream from the process, and means for sensing a pressure characteristic of the effluent gas stream and responsively selectively driving the motive fluid driver to stabilize the process.
11. A method of damping pressure and flow variations in a process discharging an effluent gas stream, in which pressure variations in the effluent gas stream can adversely affect the process, said method comprising:
flowing the effluent gas stream from the process to a ring compressor;
compressing the effluent gas stream in the ring compressor and discharging a compressed effluent gas stream therefrom; and
sensing a flow characteristic of the effluent gas stream and responsively selectively adjusting the flow of the effluent gas stream to damp said pressure variations.
15. A method according to claim 14, comprising passing the effluent gas stream through a selectively adjustable flow rate valve at a selectively adjusted flow rate, to damp said pressure variations.
16. A method according to claim 14, wherein the process comprises chemical vapor deposition.
17. A method according to claim 14, wherein the process comprises a coating operation.
18. A method according to claim 14. wherein the process comprises a reaction.
19. A method according to claim 14, further comprising: (i) monitoring the pressure characteristic of the effluent gas stream and generating a corresponding pressure characteristic signal, and motively operating the ring compressor, in response to the pressure characteristic signal, at a selected rotational speed to damp said pressure variations.
37
20. A method according to claim 14, further comprising removing water from the ettluent gab stream upstream of the ring compressor.
21. A method according to claim 20, wherein the step of removing water from the effluent gas stream comprises passing the effluent gas stream through a mist eliminator.
22. A method according to claim 20, wherein the step of removing water from the effluent gas stream comprises admixing with the effluent gas stream discharged from the process, air of lower relative humidity than the effluent gas stream, in sufficient relative proportions to prevent condensation of water from the effluent gas stream upstream of the ring compressor.
23. A system for treatment of an effluent gas stream containing aqueously scrubbable components, wherein the effluent gas stream originates from an upstream process which is adversely affected by pressure and flow fluctuations, said effluent gas stream treatment system comprising:
a wet scrubber for contacting the effluent stream with an aqueous scrubbing stream for removal of at least a portion of the aqueously scrubbable components from the effluent gas stream, to yield a scrubbed effluent gas stream, and scrubbable components-enriched aqueous stream;
means for flowing the effluent gas stream to the wet scrubber, and for discharging the scrubbed effluent gas stream, and scrubbable components-enriched aqueous stream, from the wet scrubber;
a ring compressor for compressing the scrubbed effluent gas stream to yield a compressed effluent gas stream;
38 means for flowing the scrubbed effluent gas stream to the ring compressor, and for discharging ύhe compressed effluent gas stream;
means for sensing a flow characteristic of the effluent gas stream, and responsively adjusting the flow rate of the effluent gas stream, to stabilize said fluctuations.
24. A system according to claim 23, further comprising air ballast source means for adrriixing with the scrubbed effluent gas stream, upstream of the ring compressor, ballast air in sufficient quantity and at sufficient rate to form an admixed effluent gas stream of sub- saturated water concentration, for passage to the ring compressor.
25. A system according to claim 23, further comprising a mist eliminator coupled to said wet scrubber for removing water from the scrubbed effluent gas stream, to prevent entrained water in the scrubbed effluent gas stream from entering the ring compressor.
26. A system according to claim 23, wherein said means for sensing a flow characteristic of the effluent gas stream, responsively selectively adjust the motive fluid driver to stabilize said fluctuations.
27. A system according to claim 23, further comprising:
i. a variable frequency drive for motively operating the ring compressor at a selected rotational speed;
ii. a pressure transducer monitor for monitoring the pressure of the scrubbed effluent gas stream and generating a pressure transduced signal;
iii. a proportional integral derivative controller coupled in pressure transduced signal-receiving relationship with the pressure transducer monitor, and responsive to the pressure transduced
39 signal to correspondingly adjust the variable frequency drive and responsively dπve saiu motive fluid driver at a speed to damp said pressure fluctuations.
28. A system according to claim 23, constructed and arranged to maintain pressure variation of the effluent gas stream below 0.05 inch water.
29. A method of treatment of effluent gas stream
Figure imgf000009_0001
aqueously scrubbable components, wherein the effluent stream originates from an upstream process which is adversely affected by pressure and flow fluctuations, said effluent gas stream treatment method comprising:
contacting the effluent stream with an aqueous scrubbing stream for removal of the aqueously scrubbable components from the effluent gas stream, to yield a scrubbed effluent gas stream, and scrubbable components-enriched aqueous stream;
flowing the effluent gas stream to the wet scrubber, and discharging the scrubbed effluent gas stream, and scrubbable components-enriched aqueous stream, from the wet scrubber;
compressing the effluent gas stream in a ring compressor to yield a compressed effluent gas stream, and discharging the compresses effluent gas stream; and
sensing a flow characteristic of the effluent gas stream and responsively adjustably controlling flow of the effluent gas stream to damp said [pressure] fluctuations.
30. A method according to claim 29, further comprising:
i. motively operating the ring compressor at a selected rotational speed;
40 ii. monitoring the pressure of the scrubbed effluent gas stream and generating a corresponding pressure signal;
iii. adjusting the selected motive speed of the ring compressor in response to the corresponding pressure signal to damp said pressure fluctuations in the effluent gas stream.
31. A flow stabilization system for maintaining stable operating conditions in an upstream process discharging an effluent gas stream, in which the upstream process is sensitive to fluctuations in downstream flows and pressure producing perturbations that can adversely affect the upstream process, said system comprising a motive fluid driver constructed and arranged to flow the effluent gas stream from the upstream process through a downstream flow path, with said downstream flow path including a flow control valve and means for sensing a characteristic of the effluent gas stream selected from the group consisting of pressure, temperature, composition, and flow rate, and responsively adjusting the flow control valve to stabilize the process.
32. A flow stabilization system according to claim 31, wherein the downstream flow path includes an orifice element through which the effluent gas stream is flowed.
33. A flow stabilization system according to claim 32. wherein the orifice element is interposed between control valves constructed and arranged for adjustment of the flow of the effluent gas stream to stabilize the process.
34. A flow stabilization system according to claim 31 , constructed and arranged to maintain pressure variation of the effluent gas stream below 0.05 inch water.
35. A flow stabilization system for stabilizing an upstream process discharging an effluent gas stream, in which the upstream process is pressure-sensitive and flow rate-sensitive and downstream pressure and flow variations can adversely affect the upstream process, said
41 system comprising a motive fluid driver constructed and arranged to flow the effluent gas stream from the upstream process through a downstream flow path, and means for sensing a characteristic of the effluent gas stream and controlling the flow rate of the effluent gas stream to stabilize the upstream process.
36. A flow stabilization system according to claim 35, wherein the means for sensing a characteristic of the effluent gas stream and controlling the flow rate of the effluent gas stream to stabilize the upstream process, comprise an orifice element, and means for deterniining the pressure drop across the orifice element and responsively adjusting the flow rate of the effluent gas stream to stabilize the upstream process.
37. A flow stabilization system according to claim 36. wherein the means for determining the pressure drop across the orifice element and responsively adjusting the flow rate of the effluent gas stream to stabilize the upstream process, comprise a pressure sensor/transducer assembly.
38. A flow stabilization system according to claim 36, wherein the means for determining the pressure drop across the orifice element and responsively adjusting the flow rate of the effluent gas stream to stabilize the upstream process, comprise means for adjusting the motive fluid driver.
39. A flow stabilization system according to claim 36, wherein the means for determining the pressure drop across the orifice element and responsively adjusting the flow rate of the effluent gas stream to stabilize the upstream process, comprise a flow control valve in the downstream flow path, and means for adjusting the flow control valve to stabilize the upstream process.
42
40. A flow stabilization system according to claim 35. wherein the orifice elemeni is interposed between control valves constructed and arranged for adjustment of the flow of the effluent gas stream to stabilize the upstream process.
41. A flow stabilization system according to claim 35. comprising a flow control valve downstream from the orifice element, and wherein the flow of the effluent gas stream is adjusted in response to the pressure of the effluent gas stream to stabilize the upstream process.
42. A flow stabilization system for stabilizing an upstream process discharging an effluent gas stream, in which the upstream process is pressure-sensitive and flow rate-sensitive and downstream pressure and flow variations can adversely affect the upstream process, said system comprising a motive fluid driver constructed and arranged to flow the effluent gas stream from the upstream process through a downstream flow path, and means for sensing a characteristic of the effluent gas stream and responsively adjusting the motive fluid driver to control the flow rate of the effluent gas stream and stabilize the upstream process.
43. A flow stabilization system according to claim 42. wherein the motive fluid driver comprises a ring compressor.
44. A flow stabilization system for stabilizing an upstream process discharging an effluent gas stream, in which the upstream process is pressure-sensitive and flow rate-sensitive and downstream pressure and flow variations can adversely affect the upstream process, said system comprising a motive fluid driver constructed and arranged to flow the effluent gas stream from the upstream process through a downstream flow path, a flow control valve in said downstream flow path, and means for sensing a characteristic of the effluent gas stream and responsively adjusting at least one of the motive fluid driver and the flow control valve to control the flow rate of the effluent gas stream and stabilize the upstream process.
43
45. A flow stabilization system for stabilizing an upstream process discharging an effluent gas stream, in which the upstream process is pressure-sensitive and flow rate-sensitive and downstream pressure and flow variations can adversely affect the upstream process, said system comprising a motive fluid driver constructed and arranged to flow of effluent gas stream from the upstream process through a downstream flow path, and means for sensing a pressure characteristic of the effluent gas stream and responsively adjusting the flow rate of the effluent gas stream to stabilize the upstream process.
46. A flow stabilization system according to claim 45, wherein the pressure characteristic is a pressure drop in the downstream flow path.
47. A flow stabilization system according to claim 46, wherein the downstream flow path contains a flow restriction, and the pressure drop across the flow restriction is sensed as the pressure characteristic.
48. A flow stabilized semiconductor manufacturing process system, comprising:
a semiconductor manufacturing process unit discharging an effluent gas stream, wherein the semiconductor manufacturing process unit is pressure-sensitive and flow rate-sensitive and downstream pressure and flow variations can adversely affect the upstream semiconductor manufacturing process unit;
a flow stabilization system for stabilizing an upstream semiconductor manufacturing process unit, said flow stabilization system comprising a downstream flow path through which the effluent gas stream is flowed, a motive fluid driver constructed and arranged to flow the effluent gas stream from the semiconductor manufacturing process unit through the downstream flow path, and means for sensing a characteristic of the effluent gas stream and controlling the flow rate of the effluent gas stream to stabilize the upstream process.
44
49. A flow-stabilized semiconductor manufacturing process system according to claim <τj, wherein the means for sensing a characteristic of the effluent gas stream and controlling the flow rate of the effluent gas stream to stabilize the upstream semiconductor manufacturing process unit comprise a flow control valve in the downstream flow path, means for sensing a characteristic of the effluent gas stream selected from the group consisting of pressure, temperature, composition and flow rate and responsively adjusting at least one of the motive fluid driver and flow control valve to stabilize the upstream semiconductor manufacturing process unit.
50. A method for stabilizing an upstream process discharging an effluent gas stream, in which the upstream process is pressure-sensitive and flow rate-sensitive and downstream pressure and flow rate variations can adversely affect the upstream process, said method comprising sensing a characteristic of the effluent gas flow stream selected from the group consisting of pressure, temperature, composition and flow rate, and responsively adjusting the flow of the effluent gas stream to stabilize the upstream process.
51. A method according to claim 50, wherein the flow rate of the effluent gas stream is controlled by selectively modulating a flow control valve through which the effluent gas stream is flowed, in response to the sensed characteristic of the effluent gas stream.
52. A method according to claim 50, wherein the flow rate of the effluent gas stream is controlled by passing the effluent gas stream through an orifice, sensing the pressure drop in the effluent gas stream across the orifice, and responsively adjusting the flow rate of the effluent gas stream.
53. A method according to claim 50, wherein the flow rate of the effluent gas stream is controlled by flowing the effluent gas stream to a motive fluid driver and responsively adjusting the motive fluid driver.
45
54. A method according to claim 50, wherein pressure variation of the effluent gas stream is maintained below 0.05 inch water.
55. A method of stabilizing flow to damp pressure and flow rate variations in a semiconductor manufacturing process discharging an effluent stream, wherein the semiconductor manufacturing process is pressure-sensitive and flow rate-sensitive, and downstream pressure and flow variations can adversely affect the semiconductor manufacturing process, said method comprising flowing an effluent gas stream from the semiconductor manufacturing process through a downstream flow path including a motive fluid driver constructed and arranged to flow the effluent gas stream through the downstream flow path, wherein a characteristic of the effluent gas stream is sensed and in response to such sensing the flow rate of the effluent gas stream is adjusted to stabilize the semiconductor manufacturing process.
46 STATEMENT UNDER ARTICLE 19
Please replace original pages 26-33 of the application containing the claims 1- 30 as originally filed, with the enclosed new pages 26-38 containing the claims 1-55.
In the enclosed substitute pages 26-38, the invention has been claimed in a manner more specifically reciting specific aspects thereof.
It therefore is requested that the claims as set out in the new enclosed substitute pages 26-38 be considered in the International Preliminary Examination of this application, which has been initiated by the filing in the United States International Preliminary Examining Authority of a Demand for International Preliminary Examination of this application.
47
PCT/US1997/006060 1996-03-29 1997-03-28 Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations WO1997037056A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US62286196A 1996-03-29 1996-03-29
US622,861 1996-03-29
US708,256 1996-09-06
US08/708,256 US5851293A (en) 1996-03-29 1996-09-06 Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations

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WO1997037056B1 true WO1997037056B1 (en) 1997-12-31

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Families Citing this family (194)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6338312B2 (en) * 1998-04-15 2002-01-15 Advanced Technology Materials, Inc. Integrated ion implant scrubber system
KR100242956B1 (en) * 1997-06-03 2000-02-01 윤종용 A residual removal and blocking apparatus of gas exhausting system
US6271151B1 (en) * 1997-06-30 2001-08-07 Advanced Micro Devices, Inc. Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process
EP1027918B1 (en) 1997-10-17 2005-12-28 Ebara Corporation Method and apparatus for processing exhaust gas of semiconductor fabrication
EP1029581A4 (en) * 1997-11-10 2001-09-05 Ebara Corp Method for preventing scale formation in wet type exhaust gas treating apparatus
US6352592B1 (en) 1998-01-16 2002-03-05 Silicon Valley Group, Thermal Systems Llc Free floating shield and semiconductor processing system
US6056824A (en) * 1998-01-16 2000-05-02 Silicon Valley Group Thermal Systems Free floating shield and semiconductor processing system
US6024796A (en) * 1998-06-26 2000-02-15 University Of Kentucky Research Foundation Wet scrubber and paint spray booth including the wet scrubber
FR2785062B1 (en) * 1998-10-26 2003-12-12 Air Liquide PLANT AND PRODUCTION METHOD COMPRISING SEVERAL PROCESSING STEPS
US6383300B1 (en) * 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same
DE19860639A1 (en) * 1998-12-29 2000-07-06 Man Turbomasch Ag Ghh Borsig Method for operating a compressor with a downstream consumer, and system operating according to the method
JP2000249058A (en) * 1999-02-26 2000-09-12 Ebara Corp Trap device
JP3543949B2 (en) 1999-11-09 2004-07-21 東京エレクトロン株式会社 Heat treatment equipment
AU1473301A (en) * 1999-11-12 2001-06-06 Far West Electrochemical, Inc. Apparatus and method for performing simple chemical vapor deposition
US6508303B1 (en) 1999-12-13 2003-01-21 Honda Giken Kogyo Kabushiki Kaisha Air supply control device
US6623699B1 (en) * 2000-11-15 2003-09-23 Leco Corporation Analyzing system for high accuracy nitrogen determination
FR2816726B1 (en) * 2000-11-16 2006-06-23 Air Liquide INSTALLATION IN WHICH IS CARRIED OUT AN OPERATION REQUIRING INSPECTION OF THE ATMOSPHERE IN AN ENCLOSURE
US20020185067A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
US7060234B2 (en) 2001-07-18 2006-06-13 Applied Materials Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers
US6761770B2 (en) 2001-08-24 2004-07-13 Aviza Technology Inc. Atmospheric pressure wafer processing reactor having an internal pressure control system and method
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
JP3527915B2 (en) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ CVD apparatus and cleaning method of CVD apparatus using the same
KR100523384B1 (en) * 2002-05-11 2005-10-24 최경수 Controller of gas scrubber
US7122149B2 (en) * 2002-07-12 2006-10-17 Applied Research Associates, Inc. Apparatus and method for continuous depyrogenation and production of sterile water for injection
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7390535B2 (en) * 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
TWI239259B (en) * 2004-06-03 2005-09-11 Univ Chung Yuan Christian System and method for flue gas treatment
GB2432590B (en) * 2005-11-24 2010-11-03 Boc Group Plc Chemical vapour deposition apparatus
CN100526873C (en) * 2006-09-27 2009-08-12 朱先德 Constant sulphur appliance with airflow balancing device
US8774972B2 (en) * 2007-05-14 2014-07-08 Flowserve Management Company Intelligent pump system
EP2093429A1 (en) * 2008-02-25 2009-08-26 Siemens Aktiengesellschaft Compressor unit
JP5257328B2 (en) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
NO331264B1 (en) * 2009-12-29 2011-11-14 Aker Subsea As System and method for controlling a submarine located compressor, and using an optical sensor thereto
US8383428B2 (en) * 2011-04-15 2013-02-26 J-Solution Co., Ltd. Exhaust pressure detector
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8758480B2 (en) * 2011-09-09 2014-06-24 Torosoleil, Llc Dynamic and continuous control for pressure swing adsorption
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
WO2016182648A1 (en) * 2015-05-08 2016-11-17 Applied Materials, Inc. Method for controlling a processing system
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US11581186B2 (en) * 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) * 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
KR102633318B1 (en) 2017-11-27 2024-02-05 에이에스엠 아이피 홀딩 비.브이. Devices with clean compact zones
WO2019103613A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. A storage device for storing wafer cassettes for use with a batch furnace
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (en) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
CN111630203A (en) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 Method for depositing gap filling layer by plasma auxiliary deposition
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11393703B2 (en) * 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
JP2021529880A (en) 2018-06-27 2021-11-04 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
TWI819010B (en) 2018-06-27 2023-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
DE102018120580A1 (en) * 2018-08-23 2020-02-27 Infineon Technologies Ag DEVICE AND METHOD FOR DEPOSITING A LAYER AT ATMOSPHERIC PRESSURE
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (en) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming device structure using selective deposition of gallium nitride, and system for the same
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP2020136677A (en) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic accumulation method for filing concave part formed inside front surface of base material, and device
KR102638425B1 (en) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for filling a recess formed within a substrate surface
TW202100794A (en) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP2021015791A (en) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． Plasma device and substrate processing method using coaxial waveguide
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112309843A (en) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 Selective deposition method for achieving high dopant doping
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (en) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
KR20210043460A (en) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. Method of forming a photoresist underlayer and structure including same
KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
CN112992667A (en) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 Method of forming vanadium nitride layer and structure including vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210095050A (en) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
KR20210100010A (en) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
KR20210116249A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. lockout tagout assembly and system and method of using same
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
CN113555279A (en) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 Method of forming vanadium nitride-containing layers and structures including the same
TW202146831A (en) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Vertical batch furnace assembly, and method for cooling vertical batch furnace
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
TW202147383A (en) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
TW202219628A (en) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
KR20220027026A (en) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. Method and system for forming metal silicon oxide and metal silicon oxynitride
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
KR20220053482A (en) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE396239B (en) * 1976-02-05 1977-09-12 Hytec Ab METHOD AND DEVICE FOR REGULATING THE POWER SUPPLIED TO A HYDRAULIC, A PNEUMATIC OR A HYDRAULIC PNEUMATIC SYSTEM
US4728869A (en) * 1985-12-18 1988-03-01 Anicon, Inc. Pulsewidth modulated pressure control system for chemical vapor deposition apparatus
US4958658A (en) * 1987-06-25 1990-09-25 Tegal Corporation Mass flow stabilized
DE3725358A1 (en) * 1987-07-30 1989-02-09 Telog Systems Gmbh DEVICE AND METHOD FOR SURFACE TREATMENT OF MATERIALS
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
US5450873A (en) * 1988-04-07 1995-09-19 Palmer; David W. System for controlling flow through a process region
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5011520A (en) * 1989-12-15 1991-04-30 Vector Technical Group, Inc. Hydrodynamic fume scrubber
KR0147044B1 (en) * 1990-01-23 1998-11-02 카자마 젠쥬 Heat treatment apparatus having exhaust system
US5113789A (en) * 1990-04-24 1992-05-19 Watkins Johnson Company Self cleaning flow control orifice
US5136975A (en) * 1990-06-21 1992-08-11 Watkins-Johnson Company Injector and method for delivering gaseous chemicals to a surface
US5118286A (en) * 1991-01-17 1992-06-02 Amtech Systems Closed loop method and apparatus for preventing exhausted reactant gas from mixing with ambient air and enhancing repeatability of reaction gas results on wafers
US5199853A (en) * 1991-02-26 1993-04-06 Padden Harvey F Pneumatic flow control system
US5240380A (en) * 1991-05-21 1993-08-31 Sundstrand Corporation Variable speed control for centrifugal pumps
JP2580928Y2 (en) * 1991-08-22 1998-09-17 日本電気株式会社 Vapor phase growth equipment
US5371828A (en) * 1991-08-28 1994-12-06 Mks Instruments, Inc. System for delivering and vaporizing liquid at a continuous and constant volumetric rate and pressure
US5211729A (en) * 1991-08-30 1993-05-18 Sematech, Inc. Baffle/settling chamber for a chemical vapor deposition equipment
DE4134652C2 (en) * 1991-10-19 1994-07-14 Berchem & Schaberg Gmbh Device for pressure and volume flow control of a compressible or incompressible medium flowing in a flow channel
WO1993008899A1 (en) * 1991-10-28 1993-05-13 Rj Environmental Inc. Emergency scrubbing system and method of using same
US6047713A (en) * 1994-02-03 2000-04-11 Applied Materials, Inc. Method for cleaning a throttle valve
US5681368A (en) * 1995-07-05 1997-10-28 Andrew Corporation Dehumidifier system using membrane cartridge

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